WO2013099061A1 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
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- WO2013099061A1 WO2013099061A1 PCT/JP2012/005903 JP2012005903W WO2013099061A1 WO 2013099061 A1 WO2013099061 A1 WO 2013099061A1 JP 2012005903 W JP2012005903 W JP 2012005903W WO 2013099061 A1 WO2013099061 A1 WO 2013099061A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
Definitions
- the present invention relates to a sputtering apparatus, and more particularly to a sputtering apparatus that performs sputtering film formation on a strip-shaped substrate.
- Patent Document 1 discloses an apparatus for forming a film on a belt-like substrate by passing the belt-like substrate continuously through a film forming chamber in the longitudinal direction thereof.
- JP 2010-150635 A JP-A-6-136511 Japanese Patent Laid-Open No. 9-7949 JP 2000-144407 A JP 2007-32226 A JP-A-11-350130
- a metal is used as a strip substrate so that it can withstand an annealing process of 500 ° C. or higher.
- the strip substrate is often grounded in terms of potential. For example, if the substrate is to be floated, it is necessary to take insulation measures for all substrate transport systems.
- the metal substrate is easy to conduct electricity, it is necessary to sufficiently consider the clearance between the apparatus components near the substrate and the substrate. Thus, floating the substrate requires more labor and cost than setting the substrate to the ground potential, and therefore the strip-shaped substrate is often set to the ground potential in order to simplify the device configuration.
- the plasma ring formed by the rectangular magnets arranged on the back surface of the target has a high plasma density at both ends in the longitudinal direction of the target.
- the erosion is deeply formed as compared with the central portion of the target.
- the deepest part of erosion is formed at both ends of the target, so that the target utilization rate is lowered as a whole.
- various attempts have been made to improve target utilization, but inevitably, in many cases low resistance (mainly metal) targets have been used, resulting in less significant target utilization. There was no decrease in rate. Therefore, these problems were rarely taken up so much.
- An object of the present invention is to provide a sputtering apparatus capable of improving a target utilization rate in magnetron sputtering for a band-shaped substrate.
- the present inventors have made various attempts mainly to improve the rectangular magnet disposed on the back surface of the target, but have not obtained satisfactory and satisfactory results. . As a result of intensive studies, the present inventors have discovered a method for improving the target utilization rate.
- one embodiment of the present invention is a sputtering apparatus that continuously transports a grounded metal band-shaped substrate in a chamber and performs sputtering on the band-shaped substrate.
- a target holder for holding the target a voltage applying means for generating plasma in the chamber by applying a voltage to the target holder, and a target holder
- a magnet unit that is disposed on the opposite side of the surface on which the target is held has a long first magnet, and a second magnet that is disposed so as to surround the first magnet, and the chamber Is provided between the belt-like substrate and a wall surface that exists in a direction from the magnet unit toward the belt-like substrate, and from the plasma to the wall surface
- a first shield for shielding the said first shield, characterized in that a floating potential.
- a sputtering apparatus capable of improving the target utilization rate in magnetron sputtering for a strip-shaped substrate.
- FIG. 1 is a perspective top view of a continuous film forming apparatus according to a first embodiment of the present invention. It is detailed explanatory drawing of the rectangular magnet unit 10 of 1st Embodiment of this invention. It is front sectional drawing of the film-forming chamber 3 of 1st Embodiment of this invention. 6 is a front sectional view of a film formation chamber 3 of Comparative Example 1.
- FIG. It is a schematic sectional side view of the continuous film-forming apparatus which concerns on 2nd Embodiment of this invention. It is a transparent top view of the continuous film-forming apparatus which concerns on 2nd Embodiment of this invention.
- FIG. 1 It is a top view explaining the detail of the magnet unit 10 in the rotary cathode 40 which concerns on 2nd Embodiment of this invention. It is sectional drawing explaining the detail of the magnet unit 10 in the rotary cathode 40 which concerns on 2nd Embodiment of this invention.
- FIG. 1 is a schematic sectional side view of a continuous film forming apparatus according to the first embodiment of the present invention.
- the continuous film forming apparatus is an apparatus called a so-called roll-to-roll system.
- the continuous film forming apparatus includes a substrate supply chamber 2 having an unwinding roll 30 in which the band-shaped substrate 1 is wound in a roll shape, and a film forming chamber 3 for forming a thin film on the band-shaped substrate 1 unwound from the unwinding roll 30.
- the winding roll 31 since the winding roll 31 is grounded, the belt-like substrate 1 supplied from the winding roll 30 and wound around the winding roll 31 is in a grounded state.
- the unwinding roll 30 may be grounded. That is, at least one of the unwinding roll 30 and the winding roll 31 may be grounded.
- the belt-like substrate 1 is continuously conveyed from the right side to the left side in FIG.
- An inlet for introducing the belt-like substrate 1 supplied from the unwinding roll 30 into the film forming chamber 3 is provided on the side surface of the film forming chamber 3 on the unwinding roll 30 side.
- a lead-out port for taking out the belt-like substrate 1 passing through the film forming chamber 3 to the take-up roll 31 is provided.
- each target holder 12 is provided with a voltage application unit 11 that applies a voltage to the target holder 12.
- the voltage application unit 11 generates a plasma 22 between the target 19 and the belt-like substrate 1 having a grounded conductive surface by applying a DC voltage to the target 19. You may do.
- the film formation chamber 3 is also provided with a gas introduction part (not shown) for introducing a process gas such as an inert gas such as argon or a reactive gas such as oxygen, and an exhaust part (not shown) for exhausting the film formation chamber 3. (Not shown).
- the target holder 12 is also called a backing plate and is a metal plate.
- rectangular magnet units 10 are arranged on the back side of each target 19 (on the side opposite to the target holding surface of the target holder 12, that is, on the side opposite to the discharge space (plasma generation region)). Has been. These rectangular magnet units 10 can be reciprocated along the longitudinal direction of the belt-like substrate 1 by a swinging portion (not shown).
- the material of the belt-like substrate 1 As the material of the belt-like substrate 1, a heat-resistant conductive member that can be annealed at about 500 ° C. is preferable, and a relatively inexpensive metal such as aluminum is used.
- the belt-like substrate 1 is grounded by using the metal belt-like substrate 1 and grounding the take-up roll 31. By doing so, the process gas supplied into the film forming chamber 3 can be turned into plasma by the potential difference generated between the target 19 to which a voltage is applied and the grounded belt-like substrate 1.
- one sputtering apparatus is used as the film forming chamber 3, but a plurality of film forming chambers may be provided.
- the chamber constituting the film forming chamber 3 is connected to the ground.
- the target shield 14 is connected to the ground.
- the shield 15 for shielding the inner wall of the film forming chamber 3 from the plasma generated in the film forming chamber 3 has a floating potential.
- the shield 15 having a floating potential extends from the target holder 12 toward the strip-shaped substrate 1 (the bottom surface of the film forming chamber 3) from the bottom surface shield (first shield) 15a that shields the bottom wall of the chamber 3 from the plasma 22.
- a side shield (second shield) 15b configured to surround at least a region between the target holder 12 and the belt-like substrate 1 and shields the side wall of the chamber 3 from the plasma 22, and a ceiling wall of the chamber 3 (excluding the target 19).
- the bottom shield 15 a is supported by the insulator 16.
- the side shield 15b is connected to the bottom shield 15a, and the ceiling shield 15c is connected to the side shield 15b.
- the bottom shield 15 a is a shield provided between the bottom surface 3 a of the film forming chamber 3 (the wall surface of the film forming chamber 3 existing in the direction from the rectangular magnet unit 10 toward the band-shaped substrate 1) and the band-shaped substrate 1.
- the side shield 15 b is a shield that extends from the rectangular magnet unit 10 toward the strip substrate 1 (the bottom surface of the film forming chamber 3) and surrounds at least the region between the target holder 12 and the strip substrate 1.
- the ceiling shield 15 c is a shield that covers the periphery of the target 19, and has an opening 15 d for exposing the target 19 to a discharge space that is a space in which the plasma 22 is generated.
- the ceiling shield 15c is a plate-like shield arranged so as to cover the ceiling, and is formed by adding plate-like shields so that the opening 15d is formed.
- the ceiling shield 15c only needs to be able to expose the target 19 to the plasma 22 while shielding the ceiling from the plasma 22, and may be an annular shield such as a ring-shaped shield.
- Stainless steel is generally used as the material for the shields 15a, 15b, and 15c. That is, in this embodiment, at least a discharge space in which the plasma 22 is generated is included by the bottom shield 15a, the side shield 15b, and the ceiling shield 15c having the opening 15d for exposing the target 19 to the plasma 22, which are floating potentials. Surrounding the region, the target 19 is exposed to the plasma 22 in the opening 15d. Therefore, it can be said that the plasma 22 is substantially generated in a region defined by the target 19 (target holder 12), the bottom shield 15a, the side shield 15b, and the ceiling shield 15c. Since the band-shaped substrate 1 having a grounded conductive surface passes through the region, the region of the side shield 15b on the side of the unwinding roll 30 and the side of the winding roll 31 is respectively a band-shaped substrate. An opening for passing 1 is provided.
- the belt-like substrate 1 is a thin metal having a thickness of 2 mm or less, more preferably 1 mm or less. It is conveyed while being. If the belt-like substrate 1 is exposed to the plasma space, it may expand due to heat. Therefore, if the belt-like substrate 1 is excessively tensioned by the support member, there is a risk of wrinkling or thermal deformation. Therefore, the belt-like substrate 1 can be tensioned only to some extent, and the belt-like substrate 1 is usually bent downward by its own weight. Therefore, the distance between the support member that supports the belt-like substrate 1 and the bottom shield 15a is designed to be 20 mm or more so that the grounded belt-like substrate 1 and the bottom shield 15a having the floating potential do not come into contact with each other.
- the distance between the target holder 12 and the strip substrate 1 is preferably 30 mm or more, more preferably 50 mm or more.
- the distance D1 between the target holder 12 and the belt-like substrate 1 is 70 mm
- the distance D2 between the target holder 12 and the bottom shield 15a is 120 mm.
- FIG. 2 is a transparent top view of the continuous film forming apparatus according to the first embodiment of the present invention.
- a rectangular magnet unit 10 is disposed above the rectangular target 19.
- the erosion in the longitudinal direction of the rectangular target 19 is designed to be longer than the river width of the strip substrate 1. That is, the rectangular magnet unit 10 is longer than the river width of the belt-like substrate 1.
- the rectangular magnet unit 10 can be reciprocated along the longitudinal direction of the belt-like substrate 1 by a swinging portion (not shown).
- FIG. 3 is a detailed explanatory view of the rectangular magnet unit 10 according to the first embodiment of the present invention.
- the rectangular magnet unit 10 includes a central magnet 20 b, a peripheral magnet 20 a disposed around the central magnet 20 b, and a yoke plate 21.
- the surfaces on the target side of the central magnet 20b and the surrounding magnet 20a have different polarities.
- the magnet unit 10 is not limited to a rectangular shape as shown in FIG. 3, and a magnet unit having a long first magnet and a second magnet arranged so as to surround the first magnet. If so, the surrounding magnet 20a may be elliptical.
- FIG. 4 is a front sectional view of the film forming chamber 3 according to the first embodiment of the present invention.
- the belt-like substrate 1 is transported from the back side to the near side on the paper surface, and the rectangular magnet unit 10 reciprocates along the near side direction from the back side on the paper surface.
- the width of the target 19 in the longitudinal direction is longer than the river width of the strip-shaped substrate 1 so that a thin film having a uniform film thickness can be formed on the entire substrate.
- the shield 15 for shielding the inner wall of the chamber 3 has a floating potential by interposing an insulator 16 between the shield 15 and the grounded chamber 3.
- the insulator 16 that is a support portion of the shield 15 and maintains the floating state of the shield 15 is hidden from the plasma 22 by the bottom shield 15a. That is, since the insulator 16 supports the bottom shield 15a so as not to face the plasma 22, when the target 19 is a conductive member, sputter particles do not adhere to the insulator 16. That is, it is possible to prevent or reduce the adhesion of sputtered particles to the insulator 16 for ensuring the floating state of the shield 15, and to keep the floating potential of the shield 15 good even if sputtering is performed for a long time. Can do.
- the shield 15 is configured to shield not only the bottom wall (bottom surface 3a) of the chamber 3, but also the side walls on both sides and the ceiling wall excluding the target 19.
- the leakage magnetic flux formed on the plasma surface of the target 19 by the rectangular magnet unit 10 generates a portion having a high plasma density, that is, a plasma ring.
- the electrons in the plasma do not flow into the shield 15 having the floating potential, but flow into only the grounded belt-like substrate 1, so that the plasma 22 can be concentrated between the target 19 and the belt-like substrate 1.
- erosion formed at both ends in the longitudinal direction of the target is reduced, and the utilization factor of the target can be improved.
- the shield 15 with a floating potential so as to surround the plasma 22, it is possible to reduce the diffusion of electrons to both ends in the longitudinal direction of the plasma 22. That is, since the diffusion of electrons can be reduced by the shield 15 having the floating potential, the high plasma density distribution at both ends in the major axis direction of the rectangular magnet unit 10 can be relaxed. Considering this, it can be said that the effect of the present embodiment can be obtained by setting at least the bottom shield 15a to the floating potential. This is because, when the bottom shield 15a is at a floating potential, the action of driving the electrons to be diffused to the region between the target 19 and the belt-like substrate 1 having a grounded conductive surface is exerted. .
- FIG. 5 is a front cross-sectional view of the film forming chamber 3 of the first comparative example.
- the shield 18 for shielding the inner wall of the chamber 3 is connected to the grounded chamber 3 through a conductive material 17 so as to have a ground potential. .
- most of the electrons in the plasma formed between the target 19 and the strip substrate 1 flow into the grounded strip substrate 1.
- the grounded shield 18 is used as in the comparative example 1, only a part of the electrons in the plasma formed between the target 19 and the strip substrate 1 flows into the grounded shield 18.
- the plasma diffuses slightly. This is considered to cause uneven distribution of plasma at both ends in the longitudinal direction of the plasma ring, and as a result, cause a reduction in target utilization.
- FIG. 9 is a front view of the apparatus of Comparative Example 2 (Patent Document 2).
- the apparatus of Comparative Example 2 is an apparatus for performing a bombardment process, which is a preprocess for removing moisture, hydrocarbons, oxide films, and the like adsorbed on the surface of the metal strip 102 before sputtering. That is, the apparatus of Comparative Example 2 causes the metal strip 102 to run continuously in the vacuum chamber 101 and causes glow discharge between the anode electrode 107 and the metal strip 102 in the vacuum chamber 101 to generate metal.
- the strip plate 102 is continuously subjected to coating pretreatment (bombardment treatment).
- Patent Document 2 in a processing chamber that performs bombardment processing, there are many parts that are held at a ground potential, including the chamber itself, and these are also at a negative potential relative to the anode electrode.
- the problem is that discharge occurs.
- the anode electrode 107 and the metal strip 102 in the processing region are covered with a double metal shield composed of an inner shield 105 and an outer shield 106 provided close to each other.
- the glow discharge is generated by setting the shield 105 to the anode potential or the floating potential and the outer shield 106 to the ground potential.
- the inner shield 105 is held at the anode potential, the discharge space is surrounded by the inner shield 105 having the anode potential, and the metal strip 102 is the only cathode present in the discharge space. Therefore, a stable glow discharge can be formed between the anode electrode 107 and the inner shield 105 and the metal strip 102.
- coating is performed by, for example, vacuum deposition, it is desirable in terms of equipment that the metal strip 2 is at ground potential.
- the apparatus of Comparative Example 2 disclosed in Patent Document 2 is related to the present embodiment shown in FIG. 4 in that the metal strip 2 is at the ground potential and the inner shield 105 is at the floating potential.
- the apparatus of Comparative Example 2 does not include the rectangular magnet unit 10 or the target 19, and therefore does not intend the problem of the present invention to improve the use efficiency of the target.
- the inner shield 105 having a floating potential in the apparatus of Comparative Example 2 functions so as to limit the member that becomes a cathode to the discharge plasma to the metal strip 102 as described above.
- FIG. 10 is a configuration diagram of the apparatus of Comparative Example 3 (Patent Document 3).
- the apparatus of Comparative Example 3 includes an RF electrode 230 having a collimator 221 disposed inside the sputtering film forming chamber 224, an RF power source 222 connected to the RF electrode 230, and a sputtering provided on the inner wall of the sputtering film forming chamber 224.
- a shield plate 215 that is insulated from the film forming chamber 224 is provided.
- the apparatus of Comparative Example 3 is configured so that the silicon substrate 210 can be grounded via the switch 214.
- the apparatus of Comparative Example 3 is configured such that the target 226 is grounded and the shield plate 215 is in a floating state.
- Patent Document 3 it is an object to eliminate the adhesion of the sputtered substance to the collimator and the inner wall of the chamber, thereby making it unnecessary to stop the apparatus for inspection.
- the shield plate 215 it is possible to prevent the sputtered material from adhering to the inner wall of the sputtering film formation chamber 224.
- the shield plate 215 since the shield plate 215 is in a floating state, a negative bias equivalent to the self-bias generated in the collimator 221 is generated. Therefore, the sputtered material attached to the shield 215 can be easily sputtered, and the shield plate 215 can be cleaned.
- the apparatus of Comparative Example 3 is provided with the target 226, the shield plate 215 is in a floating state, and the substrate is grounded. 3 and common.
- the apparatus of Comparative Example 3 is intended to sputter on the circular silicon substrate 210, so that the target 226 has a circular shape instead of a rectangular shape.
- this magnet unit when providing a magnet unit in the apparatus of the comparative example 3 shown in FIG. 10, this magnet unit also becomes circular shape. Therefore, in Patent Document 3, the plasma density is increased at both ends in the longitudinal direction of the target, and as a result, erosion is deeply formed at both ends in the longitudinal direction of the target as compared with the central portion of the target. There is no problem specific to the present invention.
- the shield plate 215 in the floating state of Comparative Example 3 prevents the sputtered material from adhering to the inner wall of the sputtering film forming chamber 224 as described above, and the sputtered material adhering to itself. It functions to clean.
- FIG. 11 is a cross-sectional view of the device of Comparative Example 4 (Patent Document 4).
- the apparatus of Comparative Example 4 is disposed so as to surround the chamber 302, the anode 305 and the cathode 303 disposed opposite to each other in the chamber 302, and the discharge region between the anode 305 and the cathode 303 in the chamber 302.
- an inner adhesion member 308 having a floating potential and an outer adhesion member 7 having the same potential as that of the chamber 302 disposed outside the inner adhesion member 308 in the chamber 302 are provided.
- Patent Document 4 it is possible to prevent particles scattered by sputtering from adhering to the inner wall of the chamber, to prevent dielectric breakdown of the particles deposited on the adhesion preventing member, and to perform unnecessary plasma discharge in the chamber.
- the challenge is to prevent this.
- the inner adhesion preventing member 308 since the inner adhesion preventing member 308 is provided, it is possible to prevent the sputtered particles from adhering to the inner wall of the chamber.
- the inner deposition preventing member 308 is set to a floating potential, even if electric charges are charged to the sputtered particles attached to the inner deposition preventing member 308, the dielectric breakdown does not occur. Therefore, generation of dust or particles can be prevented, and abnormal discharge such as arcing that occurs in the case of dielectric breakdown can be prevented.
- the apparatus of Comparative Example 4 is common to the film forming chamber 3 according to the present embodiment shown in FIG. 4 in that it includes the inner adhesion preventing member 308 having a floating potential and the target 303. .
- the apparatus of Comparative Example 4 does not include the rectangular magnet unit 10, and therefore does not intend the subject of the present invention to improve the target utilization efficiency.
- the inner adhesion preventing member 308 having the floating potential in the apparatus of Comparative Example 4 prevents the sputter particles from adhering to the inner wall of the chamber 302, and prevents the dielectric breakdown of the chamber itself. It functions to prevent unwanted plasma discharge in the interior.
- FIG. 12 is a cross-sectional view of the apparatus of Comparative Example 5 (Patent Document 5).
- the apparatus of Comparative Example 5 is disposed in the vicinity of the target 404 and has a first deposition shield 411 having a ground potential, a second deposition shield 412 that is disposed in the vicinity of the substrate 406 and has a floating potential, and a first A stable discharge anode 414 is provided outside the deposition shield 411, that is, outside the plasma discharge space, so as to always provide a stable ground potential surface.
- the second deposition shield 412 since the second deposition shield 412 is set at a floating potential, the dielectric breakdown is not caused by the charge accumulated on the film surface attached to the second deposition shield 412.
- the apparatus of Comparative Example 5 is related to the present embodiment shown in FIG. 4 in that the second deposition shield 412 is disposed near the substrate 406 at the floating potential and the target 404 is provided.
- the first deposition shield 411 is arranged at the ground potential in the vicinity of the target 404 and the substrate 406 is at the floating potential. Therefore, unlike the film formation chamber shown in FIG. And plasma cannot be concentrated between the substrate 406 and the substrate 406. Furthermore, since electrons in the plasma also flow into the first deposition shield 411 disposed at the ground potential, erosion formed at both ends in the longitudinal direction of the target 404 cannot be reduced. Further, the second deposition shield 412 having the floating potential in the comparative example 5 functions to prevent its own dielectric breakdown.
- Comparative Example 6 13 is a cross-sectional view of the device of Comparative Example 6, and FIG. 14 is a perspective view showing a schematic arrangement of the device of Comparative Example 6 (Patent Document 6).
- the apparatus of Comparative Example 6 aims to achieve uniform film formation and material utilization efficiency or film deposition efficiency improvement, and to realize material cost reduction and productivity improvement. Since the apparatus of Comparative Example 6 assumes that a sputter film is formed on a glass substrate that is an insulator, it is difficult to discharge in the glass substrate region. Therefore, there is a problem that electrons in the plasma ring avoid the glass substrate and flow into the mask member at the ground potential, causing plasma concentration at the end. The apparatus of Comparative Example 6 is intended to solve this problem. It has been proposed.
- the apparatus of Comparative Example 6 is not assumed to be used by forming a film on a metal substrate.
- a region facing the both ends in the longitudinal direction of the magnetic circuit unit 501 of the mask member 504 adjacent to the glass substrate 505 is insulated from the ground potential by a certain width X.
- the floating region 504a is obtained.
- a rectangular target 502 is disposed with one surface facing the glass substrate 505 and the mask member 504, and five magnetic circuit units 501 are disposed on the other surface of the target 502.
- the apparatus of Comparative Example 6 is shown in FIG. 4 in that the rectangular target 502 is disposed and the area near the both ends in the longitudinal direction of the magnetic circuit unit 501 is the floating area 504a.
- the floating region 504a prevents electrons from flowing into the end portion, and as a result, it is possible to suppress the concentration of plasma at the end portion. Therefore, as the film deposition on the floating region 504a progresses, the floating region 504a becomes ground, electrons easily flow into the end portion, and it becomes impossible to suppress the concentration of plasma at the end portion. Not suitable for.
- the film forming apparatus 3 according to this embodiment shown in FIG. 4 is configured so that the grounded metal belt-like substrate 1 is continuously conveyed in the chamber, so that the target 19 is continuously sputtered. It faces the grounded metal strip substrate 1 which is not filmed.
- the film forming apparatus 3 shown in FIG. 4 can maintain the shield 15 at a floating potential at all times through the insulator 16 between the shield 15 and the grounded chamber 3 even when the film is deposited on the shield 15. Is possible. Therefore, the film forming apparatus shown in FIG. 4 can concentrate plasma between the target 19 and the substrate 1 while the substrate is continuously transferred into the chamber. Suitable.
- Example 1 Using the apparatus according to the present embodiment shown in FIG. 4 and the apparatus according to Comparative Example 1 shown in FIG. 5, the erosion results of the metal target were compared.
- the deposition conditions are all aluminum (Al) as a target, the internal pressure is 1.0 [Pa], the power applied to the target is 15 [kw], the voltage is 390 to 410 [V], and Ar is a process gas.
- Ar is a process gas.
- each was discharged for a long time, and the erosion shape was actually measured and compared.
- the magnet unit 10 was swung at a predetermined cycle.
- the target usage rate was 40%, while in Example 1, the target usage rate was 44%.
- Example 1 the deepest part of the target erosion near the end of the magnet was shallower than in the comparative example.
- Example 1 the difference in erosion between the vicinity of the center of the target and the vicinity of the target end portion was smaller than that of Comparative Example 1, and as a result, the target utilization rate was improved by about 4%. From this, it is considered that by changing the grounded shield 18 to the shield 15 having a floating potential, the uneven distribution of plasma at both ends in the longitudinal direction of the plasma ring can be eliminated, and the utilization rate of the metal target is improved.
- Example 2 The erosion results of the high resistance target were compared using the apparatus according to the present embodiment shown in FIG. 4 and the apparatus according to Comparative Example 1 shown in FIG.
- the film forming conditions are all zinc oxide (ZnO) as a target, the internal pressure is 1.0 [Pa], the applied power to the target is 15 [kw], the voltage is 390 to 410 [V], and the process gas is Using Ar gas, each was discharged for a long time, and the erosion shape was actually measured and compared.
- the magnet unit 10 was swung at a predetermined cycle.
- the high-resistance target here refers to all targets that cause a potential difference from the ground (ground) by being deposited on a grounded surface (for example, a shield).
- the target usage rate was 30%, while in Example 2, the target usage rate was 36%. That is, even in a high resistance target, in this embodiment, the erosion depth of the target near the end of the magnet is shallow. That is, since the difference in erosion between the vicinity of the center of the target and the vicinity of the end of the target is reduced, the target utilization rate is improved by about 6% as a result. From this, it is considered that the uneven distribution of plasma at both ends in the longitudinal direction of the plasma ring can be eliminated by changing the grounded shield 18 to the shield 15 having the floating potential, and the utilization rate of the high resistance target is improved. . In this configuration, unlike the existing apparatus, the chamber and the shield are not used as the main ground.
- the belt-like substrate 1 is used as the ground, a new ground surface is always maintained, so that the ground is not hidden by adhesion of the insulating film and the potential configuration does not change with time, and is stable for a long time.
- a simple potential configuration can be maintained.
- Target utilization can be improved.
- the rectangular magnet unit 10 is reciprocated at a predetermined cycle.
- the target utilization rate can be improved even when the rectangular magnet unit 10 is fixed.
- FIG. 6 is a schematic sectional side view of a continuous film forming apparatus according to the second embodiment of the present invention.
- the continuous film forming apparatus of the present embodiment has basically the same configuration as the continuous film forming apparatus shown in FIG. 1, and the same reference numerals are given to the same structural members, and the detailed description thereof will be given. Omitted.
- a cylindrical target is mounted, and a rotatable rotary cathode 40 is provided along the longitudinal direction of the strip substrate 1.
- Each rotary cathode 40 is provided with a voltage application unit 11.
- the voltage application unit 11 may apply a DC voltage or may apply a high frequency voltage.
- the rotary cathode 40 functions as a target holder.
- the film formation chamber 3 is provided with a gas introduction part (not shown) for introducing a process gas such as argon and an exhaust part (not shown) for exhausting the film formation chamber 3.
- the magnet units 10 are respectively arranged inside the rotary cathodes 40.
- the rotary cathode 40 is configured to be rotatable with respect to a rotation axis parallel to the width direction of the belt-like substrate 1.
- the magnet unit 10 is fixed so that the lines of magnetic force are directed toward the band-shaped substrate 1.
- FIG. 7 is a transparent top view of the continuous film forming apparatus according to the second embodiment of the present invention. As shown in FIG. 7, the longitudinal width of the rotary cathode 40 is designed to be longer than the river width of the strip substrate 1.
- the magnet unit 10 includes a long central magnet 20b, a peripheral magnet 20a disposed around the central magnet 20b, and a yoke plate 21.
- the surfaces on the target side of the central magnet 20b and the surrounding magnet 20a have different polarities.
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Abstract
Description
本発明の目的は、帯状基板に対するマグネトロンスパッタリングにおいて、ターゲット利用率を向上可能なスパッタリング装置を提供するものである。
そこで、本発明者らは鋭意検討した結果、ターゲット利用率を改善する手法を発見した。
以下に、本発明の代表的な実施形態を添付図面に基づいて説明する。
図1は、本発明の第1実施形態に係る連続成膜装置の概略側断面図である。
連続成膜装置は、いわゆるロールトゥーロール方式と呼ばれる装置である。連続成膜装置は、帯状基板1をロール状に巻いた巻き出しロール30を有する基板供給室2と、該巻き出しロール30から巻き出された帯状基板1に薄膜を形成する成膜室3と、薄膜が形成された帯状基板1を巻き取る巻き取りロール31であって、アースされた巻き取りロール31を有する基板巻取り室4とを備えている。本実施形態では、巻き取りロール31がアースされているので、巻き出しロール30から供給され、巻き取りロール31に巻き取られる帯状基板1はアース状態となる。なお、巻き出しロール30をアースしても良い。すなわち、巻き出しロール30および巻き取りロール31の少なくともいずれか一方をアースすれば良い。
図2に示すように、矩形のターゲット19の上方には、矩形の磁石ユニット10が配置されている。矩形のターゲット19の長手方向のエロージョンは、帯状基板1の川幅より、長くなるように設計されている。つまり、矩形磁石ユニット10は、帯状基板1の川幅より長くなるようになっている。矩形磁石ユニット10は、不図示の揺動部により、帯状基板1の長手方向に沿って往復移動が可能となっている。
図3に示すように、矩形磁石ユニット10は、中央磁石20bと、中央磁石20bの周囲に配置された周囲磁石20aと、ヨーク板21とを有している。中央磁石20bと周囲磁石20aのターゲット側の面は、互いに極性が異なるようになっている。なお、磁石ユニット10は、図3に示すような矩形のものに限らず、長尺状の第1の磁石と該第1の磁石を囲むように配置された第2の磁石とを有する磁石ユニットであれば、周囲磁石20aは楕円状のものであってもよい。
図4では、帯状基板1は、紙面上の奥側から手前側へ搬送され、矩形磁石ユニット10は、紙面上の奥側から手前側方向に沿って、往復移動する。図4に示すように、ターゲット19の長手方向の幅は、基板全体に均一な膜厚の薄膜を形成できるように、帯状基板1の川幅より長くなっている。チャンバ3の内壁を遮蔽するためのシールド15は、アースされたチャンバ3との間に、絶縁物16を介することで、フローティング電位になるようになっている。本実施形態では、シールド15の支持部であり、かつシールド15のフローティング状態を維持するための絶縁物16は底面シールド15aによってプラズマ22から隠れている。すなわち、絶縁物16はプラズマ22に臨まないように底面シールド15aを支持しているので、ターゲット19が導電性部材である場合において、絶縁物16にスパッタ粒子が付着することは無い。すなわち、シールド15のフローティング状態を確保するための絶縁物16にスパッタ粒子が付着することを防止、ないしは低減することができ、長時間スパッタリングを行っても、シールド15のフローティング電位を良好に保つことができる。
図5は、比較例1の成膜室3の正面断面図である。
図4に示す成膜室と異なり、チャンバ3の内壁を遮蔽するためのシールド18は、アースされたチャンバ3との間に、導電物17を介することで、アース電位になるようになっている。こうした場合も、ターゲット19と帯状基板1との間に形成されたプラズマ中の電子の多くは、アースされた帯状基板1に流入される。しかしながら、比較例1のように、アースされたシールド18を用いた場合、ターゲット19と帯状基板1との間に形成されたプラズマ中の電子のごく一部が、アースされたシールド18に流入し、プラズマが若干拡散してしまう。これが、プラズマリングの長手方向の両端部においてプラズマの偏在をもたらし、結果的に、ターゲットの利用率低下の原因となると考えられる。
図9は、比較例2の装置の正面図である(特許文献2)。比較例2の装置は、金属帯板102の表面に吸着した水分、炭化水素、酸化膜等をスパッタリングの前に除去するための前処理であるボンバードメント処理を行うための装置である。すなわち、上記比較例2の装置は、真空チャンバ101内に金属帯板102を連続的に走行させ、真空チャンバ101内においてアノード電極107と金属帯板102との間にグロー放電を生じさせて金属帯板102に対して連続的にコーティング前処理(ボンバードメント処理)を施す。
図10は、比較例3の装置の構成図である(特許文献3)。比較例3の装置は、スパッタリング成膜チャンバ224内部に配置されるコリメータ221を有するRF電極230と、このRF電極230に接続されるRF電源222と、スパッタリング成膜チャンバ224内壁に設けられたスパッタリング成膜チャンバ224とは絶縁されたシールド板215とを備えている。更に、比較例3の装置は、スイッチ214を介してシリコン基板210を接地できるよう構成されている。また、比較例3の装置は、ターゲット226は接地されていて、シールド板215はフローティング状態になるよう構成されている。特許文献3では、コリメータおよびチャンバ内壁へのスパッタリングされた物質の付着等をなくし、点検のための装置の停止を不要とすることを課題としている。図10に記載の装置では、シールド板215を設けることにより、スパッタリング成膜チャンバ224の内壁にスパッタリングされた物質が付着するのをふせぐことができる。さらに、シールド板215をフローティング状態としているので、コリメータ221に生じる自己バイアスと同程度の負のバイアスが生じる。このため、シールド215に付着したスパッタリングされた物質を容易にスパッタリングすることができ、シールド板215をクリーニングすることができる。
図11は、比較例4の装置の断面図である(特許文献4)。比較例4の装置は、チャンバ302と、チャンバ302内に相互に対向して配置されたアノード305及びカソード303と、チャンバ302内においてアノード305とカソード303との間の放電領域を取り囲んで配置された、フローティング電位の内側防着部材308と、チャンバ302内における内側防着部材308の外側に配置されたチャンバ302と同電位の外側防着部材7と、を備える。特許文献4では、スパッタリングにより飛散した粒子がチャンバの内壁へ付着することを防止できると共に、防着部材に堆積した粒子の絶縁破壊を防止することができ、更に、チャンバ内での不要なプラズマ放電を防止することを課題としている。図11に記載の装置では、内側防着部材308を設けているので、スパッタ粒子がチャンバの内壁へ付着することを防止することができる。また、内側防着部材308をフローティング電位としているので、該内側防着部材308に付着したスパッタ粒子に電荷がチャージされても絶縁破壊することが無い。よって、ゴミまたはパーティクルの発生を防止することができると共に、絶縁破壊の場合に生じるアーキング等の異常放電を防止することができる。
図12は、比較例5の装置の断面図である(特許文献5)。比較例5の装置は、ターゲット404近傍に配置され、接地電位である第1の防着シールド411と、基板406近傍に配置され、フローティング電位である第2の防着シールド412と、第1の防着シールド411の外側、すなわちプラズマ放電空間の外側に常に安定してアース電位面を提供し続けるための安定放電用アノード414とを備えている。図12に示す装置では、第2の防着シールド412をフローティング電位としているので、該第2の防着シールド412に付着した膜表面にたまったチャージにより絶縁破壊を起こすことは無い。
図13は、比較例6の装置の断面図であり、図14は比較例6の装置の概略配置を示す斜視図である(特許文献6)。比較例6の装置は、均一の成膜と材料利用効率あるいは膜の付着効率向上を図り、材料コスト低減や生産性向上を実現することを目的としている。比較例6の装置は、絶縁体であるガラス基板にスパッタ成膜することを想定しているため、ガラス基板領域では放電しにくい。よって、プラズマリングの中の電子はガラス基板を避け、アース電位のマスク部材に流入し、端部へのプラズマ集中を引き起こすという問題が生じるが、比較例6の装置は、この問題を解決するべく提案されたものである。即ち、比較例6の装置は、金属製基板に成膜して使用することを想定していない。比較例6の装置では、上記目的を達成するため、ガラス基板505に隣接するマスク部材504のうち、磁気回路ユニット501の長手方向の両端部と対向する領域を一定の幅Xだけアース電位から絶縁してフローティング領域504aとする。また、ガラス基板505およびマスク部材504に一方の面を対向させて長方形のターゲット502が配置され、ターゲット502の他方の面には5つの磁気回路ユニット501が配置されている。
図4に示した本実施形態に係る装置と、図5に示した比較例1に係る装置とを用いて、金属ターゲットのエロージョンの結果を比較した。
成膜条件は、いずれも、ターゲットとしてアルミニウム(Al)、内部圧力は1.0[Pa]、ターゲットへの印加電力は15[kw]、電圧は390~410[V],プロセスガスとしてのArガスを使用し、それぞれ長時間放電させエロージョン形状を実際に測定及び比較した。磁石ユニット10は所定の周期で揺動させた。比較例1では、ターゲット利用率は40%であったのに対し、実施例1では、ターゲット利用率は44%であった。実施例1では、比較例より、マグネット端部付近のターゲットのエロージョンの最深部が浅くなった。つまり、実施例1では、比較例1より、ターゲットの中央付近と、ターゲット端部付近とのエロージョンの差が小さくなったため、結果的に、ターゲット利用率が約4%向上した。このことから、アースされたシールド18を、フローティング電位のシールド15に変更することで、プラズマリングの長手方向の両端部におけるプラズマの偏在を解消でき、金属ターゲットの利用率が向上したと考えられる。
図4に示した本実施形態に係る装置と、図5に示した比較例1に係る装置とを用いて、高抵抗ターゲットのエロージョンの結果を比較した。成膜条件は、いずれも、ターゲットとして酸化亜鉛(ZnO)、内部圧力は1.0[Pa]、ターゲットへの印加電力は15[kw]、電圧は390~410[V],プロセスガスとしてのArガスを使用し、それぞれ長時間放電させエロージョン形状を実際に測定及び比較した。磁石ユニット10は所定の周期で揺動させた。なお、ここでいう高抵抗ターゲットとは、アースされている面(例えばシールド)に、成膜されることでグラウンド(接地)との電位差が生じる全てのターゲットをいう。比較例1では、ターゲット利用率は30%であったのに対し、実施例2では、ターゲット利用率は36%であった。つまり、高抵抗なターゲットにおいても、本実施形態では、マグネット端部付近におけるターゲットのエロージョン深さが浅くなった。つまり、ターゲットの中央付近と、ターゲット端部付近とのエロージョンの差が小さくなったため、結果的にターゲット利用率が約6%改善された。このことから、アースされたシールド18を、フローティング電位のシールド15に変更することで、プラズマリングの長手方向の両端部におけるプラズマの偏在を解消でき、高抵抗ターゲットの利用率が向上したと考えられる。尚、本構成においては,既存装置とは異なり,チャンバーやシールドを主たるアースとして利用していない。つまり帯状基板1をアースとして,常に新しいアース面が維持されるので,これまでのように、絶縁膜の付着によりアースが隠されて電位構成が経時変化するということがなく,長期に渡り安定的な電位構成が維持できる。
図6は,本発明の第2実施形態に係る連続成膜装置の概略側断面図である。
本実施形態の連続成膜装置は、図1に示した連続成膜装置と基本的には同様な構成であり、同一の構成部材には同一の参照番号を付して、その詳細な説明を省略する。本実施形態では、成膜室3の天井壁には、円筒状のターゲットを搭載し、回転可能なロータリーカソード40が、帯状基板1の長手方向に沿って並んで設けられている。各ロータリーカソード40には、電圧印加部11が設けられている。電圧印加部11は、DC電圧を印加するものでもよいし、高周波電圧を印加するものであってもよい。なお、本例では、ロータリーカソード40がターゲットホルダーとして機能する。また、成膜室3には、アルゴンなどのプロセスガスを導入するためのガス導入部(不図示)と、成膜室3を排気する排気部(不図示)が設けられている。さらに、ロータリーカソード40の内部には、それぞれ磁石ユニット10が配置されている。ロータリーカソード40は、帯状基板1の幅方向に平行な回転軸に対して、回転可能に構成されている。一方、磁石ユニット10は、帯状基板1の方向に向けて、磁力線が出るように、固定されている。
図7に示すように、ロータリーカソード40の長手幅は、帯状基板1の川幅より、長くなるように設計されている。
Claims (6)
- アースされた金属の帯状基板をチャンバ内で連続的に搬送し、該帯状基板にスパッタリングを行うスパッタリング装置であって、
前記チャンバ内を搬送される前記帯状基板に対向するよう設けられ、ターゲットを保持するためのターゲットホルダーと、
前記ターゲットホルダーに電圧を印加することで、前記チャンバ内にプラズマを発生させる電圧印加手段と、
前記ターゲットホルダーの、前記ターゲットが保持される面と反対側に配置され、長尺状の第1の磁石と、該第1の磁石を囲むように配置された第2の磁石とを有する磁石ユニットと、
前記チャンバの、前記磁石ユニットから前記帯状基板に向かう方向に存在する壁面と前記帯状基板との間に設けられ、前記プラズマから前記壁面を遮蔽する第1シールドと、を備え、
前記第1シールドはフローティング電位となっていることを特徴とするスパッタリング装置。 - 前記ターゲットホルダーから前記帯状基板に向かって延在する第2シールドであって、前記ターゲットホルダーと前記帯状基板との間の領域を少なくとも囲む第2シールドをさらに備え、
前記第2シールドはフローティング電位であることを特徴とする請求項1に記載のスパッタリング装置。 - 前記第1シールドと前記壁面との間において、前記プラズマから隠れた位置に設けられ、前記第1シールドを支持する支持部をさらに備え、
前記支持部は絶縁物であることを特徴とする請求項1に記載のスパッタリング装置。 - 前記磁石ユニットを揺動させる揺動手段をさらに備えることを特徴とする請求項1に記載のスパッタリング装置。
- 前記ターゲットホルダーに搭載されたターゲットのエロージョンの長手方向の幅は、前記帯状基板の幅より大きいことを特徴とする請求項1に記載のスパッタリング装置。
- 前記帯状基板をロール状に巻いた巻き出しロールと、
前記帯状基板を巻き取る巻き取りロールとをさらに備え、
前記巻き出しロールと前記巻き取りロールの少なくともいずれか一方は、アースされていることを特徴とする請求項1に記載のスパッタリング装置。
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- 2012-09-14 WO PCT/JP2012/005903 patent/WO2013099061A1/ja active Application Filing
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JPH1129867A (ja) * | 1997-05-14 | 1999-02-02 | Canon Inc | スパッタリング方法及びそれを用いた光起電力素子の製造方法 |
JP2000144407A (ja) * | 1998-11-06 | 2000-05-26 | Nec Corp | スパッタリング装置 |
JP2011225932A (ja) * | 2010-04-20 | 2011-11-10 | Fuji Electric Co Ltd | パターン成膜のためのスパッタリング成膜装置 |
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CN113025978A (zh) * | 2021-02-26 | 2021-06-25 | 张鹏成 | 一种磁控溅射镀膜装置 |
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CN104024471B (zh) | 2016-03-16 |
TWI500794B (zh) | 2015-09-21 |
CN104024471A (zh) | 2014-09-03 |
JPWO2013099061A1 (ja) | 2015-04-30 |
JP5824072B2 (ja) | 2015-11-25 |
TW201341562A (zh) | 2013-10-16 |
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