WO2013098067A1 - Système de contacts comprenant un moyen de liaison et procédé correspondant - Google Patents
Système de contacts comprenant un moyen de liaison et procédé correspondant Download PDFInfo
- Publication number
- WO2013098067A1 WO2013098067A1 PCT/EP2012/075026 EP2012075026W WO2013098067A1 WO 2013098067 A1 WO2013098067 A1 WO 2013098067A1 EP 2012075026 W EP2012075026 W EP 2012075026W WO 2013098067 A1 WO2013098067 A1 WO 2013098067A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrically conductive
- layer
- conductive layer
- electrical connection
- component
- Prior art date
Links
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- 150000001875 compounds Chemical class 0.000 description 1
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- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
- H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L24/92—Specific sequence of method steps
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
- H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2036—Permanent spacer or stand-off in a printed circuit or printed circuit assembly
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1316—Moulded encapsulation of mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1344—Spraying small metal particles or droplets of molten metal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Definitions
- the invention relates to a contact system.
- the contact system comprises at least one in particular electronic component.
- the component has at least one electrical connection.
- the contact system has at least one electrically conductive layer.
- the connection of the component and the electrically conductive layer are connected to one another by means of an electrically conductive connection means.
- both the at least one electrical connection, and the electrically conductive Layer must be provided by means of a galvanically applied intermediate layer so that a connecting means produced by galvanizing can connect at least one terminal of the device to the electrically conductive layer, when a material of the terminal is different from the material of the electrically conductive layer.
- a method for treating a conductor track with a thermal spraying method in which the conductor track is coated with a corrosion-resistant metallic layer.
- a part of the electrically conductive connection means is produced by means of a thermal spraying method, and a further part of the connection means is produced by means of electroplating.
- a base layer may advantageously be formed so that the connecting means can advantageously be formed predominantly of a material produced by electroplating.
- galvanic connection means for the part of the connection means produced by electroplating, hereinafter also referred to as galvanic connection means, a seed layer formed by the base layer can be formed, onto which the galvanic connection means can grow.
- Electroplating is understood as meaning an electrochemical deposition of a metal of an electrode or of a metal ion of an electrolyte.
- the connection means produced by electroplating can grow up on the layer produced by means of thermal spraying.
- an oxide layer can be removed from the electrical connection by means of the thermal spraying method during the connection, so that an application of galvanically generated intermediate layers is not necessary for electrical connection.
- an intermetallic cohesive connection-comparable to a soldering process- can be produced between the injection-molded connection means and the electrical connection by means of the connection means applied by means of thermal spraying, in particular by removing the oxide layer during the injection process.
- a connection of the component made of aluminum with a thermally sprayed copper layer can be materially connected.
- a base layer of the connecting means is formed, which is followed by the connecting means produced by galvanizing.
- the base layer produced by means of thermal spraying can advantageously form an alloy layer which has a metal of the electrical connection.
- a cohesive connection can be connected up to the electrically conductive layer by means of electroplating.
- the electrical connection is made of aluminum
- the injection-molded connection means is sprayed copper
- the galvanically grown connection means - preferably as far as an electrically conductive layer - is copper.
- thermal copper spraying for example, a galvanically generated intermediate layer, for example a nickel-palladium-gold intermediate layer on the aluminum required connection to produce a connection means from the terminal to the electrically conductive layer.
- HVFSF High Velocity Fuel-Suspensed Flame Spray
- cold gas spraying cold gas spraying
- the connecting means is preferably an electrically conductive metal or an electrically conductive alloy of mutually different metals.
- An exemplary metal is copper or aluminum.
- the connecting means preferably comprises
- the connecting means is copper.
- the electrical connection and / or the component, in particular a housing of the component is connected to the electrically conductive layer through an opening in the electrically conductive layer by means of the in particular electrically conductive connection means.
- an electrical connection to the electrically conductive layer can be connected by a narrow gap or a small opening, whereas, for example, a solder can not penetrate in a Lötwellenbad.
- An exemplary diameter for a breakthrough is between 10 and 50
- Micrometer preferably between 20 and 40 micrometers, preferably between 20 and 30 micrometers.
- the connecting means is preferably of heat-conducting construction and connects the component to the electrically conductive layer in a heat-conducting manner.
- the electrically conductive layer - for example copper - is preferably formed thermally conductive, so that the heat can be dissipated from the device via the connecting means in the layer. The heat can be released from the layer to an environment or to another component, for example a heat sink.
- the component in a contact system by means of the connecting means comprising the Base layer produced by thermal spraying and the electrodeposited layer, be connected to the thermally conductive or additionally electrically conductive layer.
- connection of the component preferably an electrically insulating part of the component and / or a part of the component that does not have an electrical
- Connection forms with the layer is preferably carried out by means of the bonding agent through an opening in the electrically conductive layer.
- the base layer thermally sprayed onto a plastic advantageously forms a seed layer as a starting process for a layer produced thereon by electroplating.
- the base layer on plastic preferably comprises palladium.
- the electrical connection in particular the electrically conductive connection means, can thus be formed by a layer which, starting from the electrical connection, passes through the opening through to the electrically conductive layer.
- heat can advantageously be conducted from the component or housing via the connecting means into the thermally conductive or additionally electrically conductive layer.
- the connecting means for example, a metal-can advantageously be thermally conductive or electrically conductive and thermally conductive.
- the connecting means is a heat-conductive connecting means only, which is designed to be electrically insulating, for example silicon dioxide or aluminum oxide, in particular ceramic.
- the material of the electrical connection and the material of the electrically conductive layer are mutually connected. eliminated.
- materials which are different from one another can be connected to one another, wherein the electrical connection means enters into a material-bonding connection with the electrical connection, for example aluminum, as well as with the electrically conductive layer, for example copper.
- the electrical connection means enters into a material-bonding connection with the electrical connection, for example aluminum, as well as with the electrically conductive layer, for example copper. It has also been found to be advantageous that both an oxide layer on the connection and on the electrically conductive layer can be removed during the production of the electrical connection means, which facilitates or even makes it possible to form the integral intermetallic compound.
- Exemplary combinations of materials are copper or aluminum, in particular an aluminum alloy for the electrically conductive layer, and tin, copper, gold or silver for the material of the electrical connection.
- the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer.
- the electrically insulating layer is preferably a fiber-reinforced carrier layer, in particular a glass-fiber-reinforced epoxy resin layer.
- the electrically insulating layer is covered by a plastic film, in particular a
- the electronic components can be enclosed between the electrically conductive layer and the electrically insulating layer, in particular against contamination or external influence, the electrically insulating layer preferably serving as a carrier layer for mechanically supporting the contact system, preferably as part of a circuit arrangement.
- the component is at least partially embedded in a polymer, in particular injected or fused by means of a molding process.
- the polymer is, for example, a polyacrylate, polypropylene, polyamide, epoxy resin or a comparable plastic.
- the polymer can advantageously be formed a support layer for mechanical loading of the contact system.
- the contact system preferably as part of a circuit arrangement, by means of the polymer in a housing block - especially protected against external influences - be included.
- the base layer of the electrically conductive connection means contacts the electrical connection directly.
- the electrical connection advantageously does not need to be coated with an intermediate layer, for example by means of an additional galvanic process, in order then to be connected to the electrically conductive layer.
- the invention also relates to a method for electrically connecting at least one electrical connection of a particular electronic component with at least one electrically conductive layer.
- the electrically conductive layer is, for example, a layer for forming at least one conductor track of the contact system.
- the contact system is for example a single-layer or multi-layer printed circuit board. Preferably, the contact system is part of a circuit arrangement.
- the electrical connection is preferably connected to the electrically conductive layer by means of an electrically conductive connection means.
- the electrically conductive connection means is preferably produced partly by means of a thermal spraying method and partly by means of electroplating.
- the electrical connection and / or the component or a housing of the component is connected to the electrically conductive layer by means of the electrically conductive connection means through an opening in the electrically conductive layer.
- the connecting means comprises a thermally sprayed base layer and a main layer produced by electroplating.
- the main layer produced by electroplating preferably has a greater layer thickness than the base layer.
- the base layer is formed only on the terminal.
- the base layer is formed on the terminal and on a wall of the aperture.
- Germination of the wall can then be omitted.
- heat can advantageously be dissipated from the housing via the connecting means into the electrically conductive layer.
- the material of the electrical connection and the material of the electrically conductive layer are preferably different from one another. More preferably, the material contacts the electrical connection and / or the electrically conductive layer directly.
- the direct contacting means that the electrical connection is preferably formed preferably solid at least in an area formed to be connected to the material of a predetermined material, for example aluminum.
- the electrically conductive layer is preferably formed in a region, which is formed to be connected to the material, solid from a predetermined material, such as copper.
- the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer, after the electrical connection has been connected to the electrically conductive layer by means of the electrically conductive connection means.
- a viable structure can advantageously be produced after the electrical connections have been connected to at least one area or part of the electrically conductive layer, for example to a conductor track.
- FIG. 1a shows an exemplary embodiment of a method for producing a contact system.
- an adhesive in particular adhesive, in this exemplary embodiment, an adhesive 12 and 14 each in the form of a drop on an electrically conductive film 10, previously also called electrically conductive layer applied.
- the foil is, for example, a copper foil.
- the adhesive in this embodiment the adhesives 12 and 14, can be printed onto the copper foil 10 by means of a mask or sprayed onto the copper foil 10.
- the adhesive may - be formed by a self-adhesive film - unlike in Figure 1 a.
- the adhesive may be, for example, a solvent-containing adhesive which changes its viscosity after evaporation of the solvent or a hot-melt adhesive.
- the adhesive is an epoxy adhesive or an acrylate adhesive, which forms, depending on heat or ultraviolet radiation curing, in particular to be polymerized out.
- the adhesives 12 and 14 each contain solid bodies, which are spherical in this embodiment.
- the solids 16 and 18 are exemplified.
- electronic components in this embodiment an integrated circuit 20 and an integrated circuit 22, are glued to the copper foil 10 by means of the adhesive 14 or 12.
- the integrated circuit 20 is for this purpose pressed onto the adhesive 14.
- the integrated circuit 20 can be brought together so far with the copper foil 10 until the integrated circuit 20 on the solids, in this embodiment, the solids comprising the solid 18 meets and can not be pressed closer to the copper foil. Shown is also the integrated circuit 22, which has been pressed onto the adhesive 12.
- the adhesive 12 in this embodiment also includes solids, of which the solid 16 is exemplified.
- the integrated circuits 20 and 22 are laminated by means of a laminate, for example a laminate film 30 as an electrically insulating layer together with the copper foil 10.
- the integrated circuits 20 and 22 are protected after being laminated at least against mechanical impact.
- the laminate film 30 may advantageously form a circuit carrier in which the circuits 20 and 22 are integrated.
- the integrated circuits 20 and 22 can also be embedded, for example melted or injected, by means of a molding process by means of a molding compound. The integrated circuits will be so protected.
- the integrated circuit 20 has electrical connections, wherein an electrical connection 24 is designated by way of example.
- the electrical connections are formed, for example, at least in a region intended for connection to an electrical conductor, for example, of aluminum or an aluminum alloy.
- the integrated circuit 22 has - like the integrated circuit 20 - electrical connections, of which the electrical connection 26 is exemplified.
- the electrical connections of the integrated circuit 22 sen in an area for electrical connection to a conductor track, for example, aluminum.
- recesses 40, 42, 44 and 46 are bored through the copper foil 10 and the adhesives 12 and 14, for example by means of a laser or photolithographically and by means of etching.
- the recesses 40, 42, 44 and 46 each extend to an electrical connection of an integrated circuit.
- the recess 40 extends to the terminal 24.
- the recess 44 extends to the terminal 26th
- a thermal spraying method for example by means of a plasma spray method
- an electrically conductive material as connecting means for example an alloy comprising copper and / or aluminum, and so on generates an electrically conductive base layer.
- a further layer can then be galvanically applied to the base layer.
- an example of a previously mentioned contact system is then formed, in which the terminals are each electrically connected to a film, in particular to a surface section of the film, for example a conductor track.
- the electrically conductive layer can be covered with a mask, for example a photoresist, before the thermal spraying into the recesses. Thus, contamination of areas in the vicinity of the recess can be avoided.
- the mask can be removed after thermal spraying.
- a plasma spray nozzle 60 is shown, for example, is sprayed from the electrically conductive material in the form of electrically conductive spray particles in the recess 40, where the spray particles join together to form an electrically conductive connection means, thus forming the base layer 50 of the electrically conductive connection means ,
- the electrically conductive foil 10 is thus electrically conductively connected to the connection 24 by means of the connection means 50.
- both the electrical connection 24 and the film 10 remove interfering oxides and / or contaminations with other substances.
- a good electrical contact and an intermetallic material bond is formed from the terminal into the base layer.
- a two-layer structure of a contact system is shown in a method step 75, comprising two layers, each formed by a film, namely the films 10 and 1. Also conceivable is a contact system with more than two layers as part of a circuit arrangement. voltage.
- the recesses in which the base layer was previously formed are then filled by means of electroplating with an electrically conductive connecting means, for example copper, so that the electrically conductive layer 10 is connected to the terminals 24 and 26.
- the connection means which connects the connection 24 to the layer 10 comprises the base layer 50 and a galvanically generated part 51 of the connection means.
- the recess 44 is filled in step 75 with a base layer 54 produced by thermal spraying and a galvanically produced part 55 of the connecting means.
- the recess 46 is filled in step 75 with a base layer 56 produced by thermal spraying and a galvanically produced part 58 of the connecting means.
- a film 1 for example, a copper foil, which is formed with a laminate formed by the laminate film 30 and extends parallel to the film 10 in this embodiment.
- the films 10 and 11 thus enclose the laminate film 30 with the integrated circuits 20 and 22 between them.
- recesses 41 and 43 are drilled in this exemplary embodiment-for example by means of a laser-which extend through the film 11 and further through the laminate film 30 all the way to a housing of the integrated circuit 20. By means of the recesses 41 and 43, heat can be dissipated from the integrated circuit 20.
- the recesses 45 and 47 which through the film 1 1 and further through the laminate film 30 therethrough to a housing of inte grated circuit 22 are rich, are partially filled by means of a thermally conductive material 57 and 59 as the base layer of the bonding agent, so that the film 1 1 is connected by means of the thermally conductive material to the housing of the integrated circuit 22.
- a layer 63 is electroplated, on the base layer 59 is a
- a vessel 80 is shown in which an electrolyte 82 is kept in stock.
- the electrolyte 82 includes, for example, sulfuric acid, copper sulfate, sodium chloride and / or ethanol as a brightener and a surfactant as a wetting aid.
- a current density during electroplating is, for example, 10 milliamps per square centimeter of the electrically conductive layer.
- an electrode 84 By means of an electrode 84, the parts 63 and 64 of the connecting means were produced.
- an electrode 86 the parts 51, 53, 55 and 58 of the connecting means were produced.
- a thickness of the flat-shaped copper electrodes 84 and 86 is, for example, between 7 and 10 millimeters.
- a method step 76 recesses and / or recesses are cut into the electrically conductive film 10, for example by means of a laser, so that electrically conductive conductor tracks are formed, which can each form connection lines of an electrical circuit or of a circuit arrangement.
- This method step for forming printed conductors can also be carried out prior to contacting, for example by means of photo-patterning.
- the photostructuring comprises, for example, applying a photoresist, exposing with a mask, removing the photoresist at the exposed areas and etching the electrically conductive layer on the exposed
- the recesses 47 and 49 for generating electrical connections, in particular of printed conductors, are designated by way of example.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
L'invention concerne un système de contacts (74, 75). Le système de contacts comprend au moins un composant (20, 22), en particulier électronique. Le composant présente au moins une connexion électrique (24, 26). Le système de contacts présente au moins une couche électriquement conductrice (10, 11). La connexion du composant et la couche électriquement conductrice sont reliées entre elles par un moyen de liaison électriquement conducteur. Selon l'invention, le moyen de liaison électriquement conducteur est réalisé en partie (50, 52, 54, 56, 57, 59) par un procédé de pulvérisation thermique et en partie (51, 53, 55, 58, 63, 64) par galvanisation.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102011089927.8 | 2011-12-27 | ||
DE102011089927A DE102011089927A1 (de) | 2011-12-27 | 2011-12-27 | Kontaktsystem mit einem Verbindungsmittel und Verfahren |
Publications (1)
Publication Number | Publication Date |
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WO2013098067A1 true WO2013098067A1 (fr) | 2013-07-04 |
Family
ID=47504861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2012/075026 WO2013098067A1 (fr) | 2011-12-27 | 2012-12-11 | Système de contacts comprenant un moyen de liaison et procédé correspondant |
Country Status (2)
Country | Link |
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DE (1) | DE102011089927A1 (fr) |
WO (1) | WO2013098067A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102014217186A1 (de) * | 2014-08-28 | 2016-03-03 | Continental Automotive Gmbh | Verfahren zum Herstellen eines Schaltungsträgers und Schaltungsträger für elektronische Bauelemente |
DE102017216453B4 (de) | 2017-09-18 | 2024-02-22 | Robert Bosch Gmbh | Kontaktanordnung mit einem Halbleiter und Verfahren zu deren Herstellung |
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US4532152A (en) * | 1982-03-05 | 1985-07-30 | Elarde Vito D | Fabrication of a printed circuit board with metal-filled channels |
JPH09283898A (ja) * | 1996-04-09 | 1997-10-31 | Omron Corp | 電子部品の実装方法 |
DE10153482A1 (de) | 2001-10-30 | 2003-05-22 | Leoni Ag | Verfahren zum Behandeln eines elektrischen Leiters |
DE102004047357A1 (de) * | 2004-09-29 | 2006-04-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Elektrische Anordnung und Verfahren zum Herstellen einer elektrischen Anordnung |
DE102006037532A1 (de) * | 2006-08-10 | 2008-02-14 | Siemens Ag | Verfahren zur Erzeugung einer elektrischen Funktionsschicht auf einer Oberfläche eines Substrats |
DE102008009220A1 (de) * | 2008-02-06 | 2009-08-13 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Leiterplatte |
US20110266041A1 (en) * | 2002-01-31 | 2011-11-03 | Tuominen Risto | Method for embedding a component in a base |
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JPH05206596A (ja) * | 1992-01-27 | 1993-08-13 | Furukawa Electric Co Ltd:The | 金属ベースプリント回路基板 |
US5964395A (en) * | 1997-06-09 | 1999-10-12 | Ford Motor Company | Predeposited transient phase electronic interconnect media |
FI117814B (fi) * | 2004-06-15 | 2007-02-28 | Imbera Electronics Oy | Menetelmä elektroniikkamoduulin valmistamiseksi |
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2011
- 2011-12-27 DE DE102011089927A patent/DE102011089927A1/de not_active Withdrawn
-
2012
- 2012-12-11 WO PCT/EP2012/075026 patent/WO2013098067A1/fr active Application Filing
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US4532152A (en) * | 1982-03-05 | 1985-07-30 | Elarde Vito D | Fabrication of a printed circuit board with metal-filled channels |
JPH09283898A (ja) * | 1996-04-09 | 1997-10-31 | Omron Corp | 電子部品の実装方法 |
DE10153482A1 (de) | 2001-10-30 | 2003-05-22 | Leoni Ag | Verfahren zum Behandeln eines elektrischen Leiters |
US20110266041A1 (en) * | 2002-01-31 | 2011-11-03 | Tuominen Risto | Method for embedding a component in a base |
DE102004047357A1 (de) * | 2004-09-29 | 2006-04-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Elektrische Anordnung und Verfahren zum Herstellen einer elektrischen Anordnung |
DE102006037532A1 (de) * | 2006-08-10 | 2008-02-14 | Siemens Ag | Verfahren zur Erzeugung einer elektrischen Funktionsschicht auf einer Oberfläche eines Substrats |
DE102008009220A1 (de) * | 2008-02-06 | 2009-08-13 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Leiterplatte |
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