WO2013098067A1 - Contact system with a connecting means and method - Google Patents
Contact system with a connecting means and method Download PDFInfo
- Publication number
- WO2013098067A1 WO2013098067A1 PCT/EP2012/075026 EP2012075026W WO2013098067A1 WO 2013098067 A1 WO2013098067 A1 WO 2013098067A1 EP 2012075026 W EP2012075026 W EP 2012075026W WO 2013098067 A1 WO2013098067 A1 WO 2013098067A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrically conductive
- layer
- conductive layer
- electrical connection
- component
- Prior art date
Links
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H05K1/00—Printed circuits
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- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
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- H01L21/486—Via connections through the substrate with or without pins
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
- H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2036—Permanent spacer or stand-off in a printed circuit or printed circuit assembly
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1316—Moulded encapsulation of mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1344—Spraying small metal particles or droplets of molten metal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Definitions
- the invention relates to a contact system.
- the contact system comprises at least one in particular electronic component.
- the component has at least one electrical connection.
- the contact system has at least one electrically conductive layer.
- the connection of the component and the electrically conductive layer are connected to one another by means of an electrically conductive connection means.
- both the at least one electrical connection, and the electrically conductive Layer must be provided by means of a galvanically applied intermediate layer so that a connecting means produced by galvanizing can connect at least one terminal of the device to the electrically conductive layer, when a material of the terminal is different from the material of the electrically conductive layer.
- a method for treating a conductor track with a thermal spraying method in which the conductor track is coated with a corrosion-resistant metallic layer.
- a part of the electrically conductive connection means is produced by means of a thermal spraying method, and a further part of the connection means is produced by means of electroplating.
- a base layer may advantageously be formed so that the connecting means can advantageously be formed predominantly of a material produced by electroplating.
- galvanic connection means for the part of the connection means produced by electroplating, hereinafter also referred to as galvanic connection means, a seed layer formed by the base layer can be formed, onto which the galvanic connection means can grow.
- Electroplating is understood as meaning an electrochemical deposition of a metal of an electrode or of a metal ion of an electrolyte.
- the connection means produced by electroplating can grow up on the layer produced by means of thermal spraying.
- an oxide layer can be removed from the electrical connection by means of the thermal spraying method during the connection, so that an application of galvanically generated intermediate layers is not necessary for electrical connection.
- an intermetallic cohesive connection-comparable to a soldering process- can be produced between the injection-molded connection means and the electrical connection by means of the connection means applied by means of thermal spraying, in particular by removing the oxide layer during the injection process.
- a connection of the component made of aluminum with a thermally sprayed copper layer can be materially connected.
- a base layer of the connecting means is formed, which is followed by the connecting means produced by galvanizing.
- the base layer produced by means of thermal spraying can advantageously form an alloy layer which has a metal of the electrical connection.
- a cohesive connection can be connected up to the electrically conductive layer by means of electroplating.
- the electrical connection is made of aluminum
- the injection-molded connection means is sprayed copper
- the galvanically grown connection means - preferably as far as an electrically conductive layer - is copper.
- thermal copper spraying for example, a galvanically generated intermediate layer, for example a nickel-palladium-gold intermediate layer on the aluminum required connection to produce a connection means from the terminal to the electrically conductive layer.
- HVFSF High Velocity Fuel-Suspensed Flame Spray
- cold gas spraying cold gas spraying
- the connecting means is preferably an electrically conductive metal or an electrically conductive alloy of mutually different metals.
- An exemplary metal is copper or aluminum.
- the connecting means preferably comprises
- the connecting means is copper.
- the electrical connection and / or the component, in particular a housing of the component is connected to the electrically conductive layer through an opening in the electrically conductive layer by means of the in particular electrically conductive connection means.
- an electrical connection to the electrically conductive layer can be connected by a narrow gap or a small opening, whereas, for example, a solder can not penetrate in a Lötwellenbad.
- An exemplary diameter for a breakthrough is between 10 and 50
- Micrometer preferably between 20 and 40 micrometers, preferably between 20 and 30 micrometers.
- the connecting means is preferably of heat-conducting construction and connects the component to the electrically conductive layer in a heat-conducting manner.
- the electrically conductive layer - for example copper - is preferably formed thermally conductive, so that the heat can be dissipated from the device via the connecting means in the layer. The heat can be released from the layer to an environment or to another component, for example a heat sink.
- the component in a contact system by means of the connecting means comprising the Base layer produced by thermal spraying and the electrodeposited layer, be connected to the thermally conductive or additionally electrically conductive layer.
- connection of the component preferably an electrically insulating part of the component and / or a part of the component that does not have an electrical
- Connection forms with the layer is preferably carried out by means of the bonding agent through an opening in the electrically conductive layer.
- the base layer thermally sprayed onto a plastic advantageously forms a seed layer as a starting process for a layer produced thereon by electroplating.
- the base layer on plastic preferably comprises palladium.
- the electrical connection in particular the electrically conductive connection means, can thus be formed by a layer which, starting from the electrical connection, passes through the opening through to the electrically conductive layer.
- heat can advantageously be conducted from the component or housing via the connecting means into the thermally conductive or additionally electrically conductive layer.
- the connecting means for example, a metal-can advantageously be thermally conductive or electrically conductive and thermally conductive.
- the connecting means is a heat-conductive connecting means only, which is designed to be electrically insulating, for example silicon dioxide or aluminum oxide, in particular ceramic.
- the material of the electrical connection and the material of the electrically conductive layer are mutually connected. eliminated.
- materials which are different from one another can be connected to one another, wherein the electrical connection means enters into a material-bonding connection with the electrical connection, for example aluminum, as well as with the electrically conductive layer, for example copper.
- the electrical connection means enters into a material-bonding connection with the electrical connection, for example aluminum, as well as with the electrically conductive layer, for example copper. It has also been found to be advantageous that both an oxide layer on the connection and on the electrically conductive layer can be removed during the production of the electrical connection means, which facilitates or even makes it possible to form the integral intermetallic compound.
- Exemplary combinations of materials are copper or aluminum, in particular an aluminum alloy for the electrically conductive layer, and tin, copper, gold or silver for the material of the electrical connection.
- the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer.
- the electrically insulating layer is preferably a fiber-reinforced carrier layer, in particular a glass-fiber-reinforced epoxy resin layer.
- the electrically insulating layer is covered by a plastic film, in particular a
- the electronic components can be enclosed between the electrically conductive layer and the electrically insulating layer, in particular against contamination or external influence, the electrically insulating layer preferably serving as a carrier layer for mechanically supporting the contact system, preferably as part of a circuit arrangement.
- the component is at least partially embedded in a polymer, in particular injected or fused by means of a molding process.
- the polymer is, for example, a polyacrylate, polypropylene, polyamide, epoxy resin or a comparable plastic.
- the polymer can advantageously be formed a support layer for mechanical loading of the contact system.
- the contact system preferably as part of a circuit arrangement, by means of the polymer in a housing block - especially protected against external influences - be included.
- the base layer of the electrically conductive connection means contacts the electrical connection directly.
- the electrical connection advantageously does not need to be coated with an intermediate layer, for example by means of an additional galvanic process, in order then to be connected to the electrically conductive layer.
- the invention also relates to a method for electrically connecting at least one electrical connection of a particular electronic component with at least one electrically conductive layer.
- the electrically conductive layer is, for example, a layer for forming at least one conductor track of the contact system.
- the contact system is for example a single-layer or multi-layer printed circuit board. Preferably, the contact system is part of a circuit arrangement.
- the electrical connection is preferably connected to the electrically conductive layer by means of an electrically conductive connection means.
- the electrically conductive connection means is preferably produced partly by means of a thermal spraying method and partly by means of electroplating.
- the electrical connection and / or the component or a housing of the component is connected to the electrically conductive layer by means of the electrically conductive connection means through an opening in the electrically conductive layer.
- the connecting means comprises a thermally sprayed base layer and a main layer produced by electroplating.
- the main layer produced by electroplating preferably has a greater layer thickness than the base layer.
- the base layer is formed only on the terminal.
- the base layer is formed on the terminal and on a wall of the aperture.
- Germination of the wall can then be omitted.
- heat can advantageously be dissipated from the housing via the connecting means into the electrically conductive layer.
- the material of the electrical connection and the material of the electrically conductive layer are preferably different from one another. More preferably, the material contacts the electrical connection and / or the electrically conductive layer directly.
- the direct contacting means that the electrical connection is preferably formed preferably solid at least in an area formed to be connected to the material of a predetermined material, for example aluminum.
- the electrically conductive layer is preferably formed in a region, which is formed to be connected to the material, solid from a predetermined material, such as copper.
- the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer, after the electrical connection has been connected to the electrically conductive layer by means of the electrically conductive connection means.
- a viable structure can advantageously be produced after the electrical connections have been connected to at least one area or part of the electrically conductive layer, for example to a conductor track.
- FIG. 1a shows an exemplary embodiment of a method for producing a contact system.
- an adhesive in particular adhesive, in this exemplary embodiment, an adhesive 12 and 14 each in the form of a drop on an electrically conductive film 10, previously also called electrically conductive layer applied.
- the foil is, for example, a copper foil.
- the adhesive in this embodiment the adhesives 12 and 14, can be printed onto the copper foil 10 by means of a mask or sprayed onto the copper foil 10.
- the adhesive may - be formed by a self-adhesive film - unlike in Figure 1 a.
- the adhesive may be, for example, a solvent-containing adhesive which changes its viscosity after evaporation of the solvent or a hot-melt adhesive.
- the adhesive is an epoxy adhesive or an acrylate adhesive, which forms, depending on heat or ultraviolet radiation curing, in particular to be polymerized out.
- the adhesives 12 and 14 each contain solid bodies, which are spherical in this embodiment.
- the solids 16 and 18 are exemplified.
- electronic components in this embodiment an integrated circuit 20 and an integrated circuit 22, are glued to the copper foil 10 by means of the adhesive 14 or 12.
- the integrated circuit 20 is for this purpose pressed onto the adhesive 14.
- the integrated circuit 20 can be brought together so far with the copper foil 10 until the integrated circuit 20 on the solids, in this embodiment, the solids comprising the solid 18 meets and can not be pressed closer to the copper foil. Shown is also the integrated circuit 22, which has been pressed onto the adhesive 12.
- the adhesive 12 in this embodiment also includes solids, of which the solid 16 is exemplified.
- the integrated circuits 20 and 22 are laminated by means of a laminate, for example a laminate film 30 as an electrically insulating layer together with the copper foil 10.
- the integrated circuits 20 and 22 are protected after being laminated at least against mechanical impact.
- the laminate film 30 may advantageously form a circuit carrier in which the circuits 20 and 22 are integrated.
- the integrated circuits 20 and 22 can also be embedded, for example melted or injected, by means of a molding process by means of a molding compound. The integrated circuits will be so protected.
- the integrated circuit 20 has electrical connections, wherein an electrical connection 24 is designated by way of example.
- the electrical connections are formed, for example, at least in a region intended for connection to an electrical conductor, for example, of aluminum or an aluminum alloy.
- the integrated circuit 22 has - like the integrated circuit 20 - electrical connections, of which the electrical connection 26 is exemplified.
- the electrical connections of the integrated circuit 22 sen in an area for electrical connection to a conductor track, for example, aluminum.
- recesses 40, 42, 44 and 46 are bored through the copper foil 10 and the adhesives 12 and 14, for example by means of a laser or photolithographically and by means of etching.
- the recesses 40, 42, 44 and 46 each extend to an electrical connection of an integrated circuit.
- the recess 40 extends to the terminal 24.
- the recess 44 extends to the terminal 26th
- a thermal spraying method for example by means of a plasma spray method
- an electrically conductive material as connecting means for example an alloy comprising copper and / or aluminum, and so on generates an electrically conductive base layer.
- a further layer can then be galvanically applied to the base layer.
- an example of a previously mentioned contact system is then formed, in which the terminals are each electrically connected to a film, in particular to a surface section of the film, for example a conductor track.
- the electrically conductive layer can be covered with a mask, for example a photoresist, before the thermal spraying into the recesses. Thus, contamination of areas in the vicinity of the recess can be avoided.
- the mask can be removed after thermal spraying.
- a plasma spray nozzle 60 is shown, for example, is sprayed from the electrically conductive material in the form of electrically conductive spray particles in the recess 40, where the spray particles join together to form an electrically conductive connection means, thus forming the base layer 50 of the electrically conductive connection means ,
- the electrically conductive foil 10 is thus electrically conductively connected to the connection 24 by means of the connection means 50.
- both the electrical connection 24 and the film 10 remove interfering oxides and / or contaminations with other substances.
- a good electrical contact and an intermetallic material bond is formed from the terminal into the base layer.
- a two-layer structure of a contact system is shown in a method step 75, comprising two layers, each formed by a film, namely the films 10 and 1. Also conceivable is a contact system with more than two layers as part of a circuit arrangement. voltage.
- the recesses in which the base layer was previously formed are then filled by means of electroplating with an electrically conductive connecting means, for example copper, so that the electrically conductive layer 10 is connected to the terminals 24 and 26.
- the connection means which connects the connection 24 to the layer 10 comprises the base layer 50 and a galvanically generated part 51 of the connection means.
- the recess 44 is filled in step 75 with a base layer 54 produced by thermal spraying and a galvanically produced part 55 of the connecting means.
- the recess 46 is filled in step 75 with a base layer 56 produced by thermal spraying and a galvanically produced part 58 of the connecting means.
- a film 1 for example, a copper foil, which is formed with a laminate formed by the laminate film 30 and extends parallel to the film 10 in this embodiment.
- the films 10 and 11 thus enclose the laminate film 30 with the integrated circuits 20 and 22 between them.
- recesses 41 and 43 are drilled in this exemplary embodiment-for example by means of a laser-which extend through the film 11 and further through the laminate film 30 all the way to a housing of the integrated circuit 20. By means of the recesses 41 and 43, heat can be dissipated from the integrated circuit 20.
- the recesses 45 and 47 which through the film 1 1 and further through the laminate film 30 therethrough to a housing of inte grated circuit 22 are rich, are partially filled by means of a thermally conductive material 57 and 59 as the base layer of the bonding agent, so that the film 1 1 is connected by means of the thermally conductive material to the housing of the integrated circuit 22.
- a layer 63 is electroplated, on the base layer 59 is a
- a vessel 80 is shown in which an electrolyte 82 is kept in stock.
- the electrolyte 82 includes, for example, sulfuric acid, copper sulfate, sodium chloride and / or ethanol as a brightener and a surfactant as a wetting aid.
- a current density during electroplating is, for example, 10 milliamps per square centimeter of the electrically conductive layer.
- an electrode 84 By means of an electrode 84, the parts 63 and 64 of the connecting means were produced.
- an electrode 86 the parts 51, 53, 55 and 58 of the connecting means were produced.
- a thickness of the flat-shaped copper electrodes 84 and 86 is, for example, between 7 and 10 millimeters.
- a method step 76 recesses and / or recesses are cut into the electrically conductive film 10, for example by means of a laser, so that electrically conductive conductor tracks are formed, which can each form connection lines of an electrical circuit or of a circuit arrangement.
- This method step for forming printed conductors can also be carried out prior to contacting, for example by means of photo-patterning.
- the photostructuring comprises, for example, applying a photoresist, exposing with a mask, removing the photoresist at the exposed areas and etching the electrically conductive layer on the exposed
- the recesses 47 and 49 for generating electrical connections, in particular of printed conductors, are designated by way of example.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention relates to a contact system (74, 75). The contact system comprises at least one electronic component (20, 22) in particular. The component has at least one electrical connection (24, 26). The contact system has at least one electrically conductive layer (10, 11). The connection of the component to the electrically conductive layer is achieved by means of an electrically conductive connecting means. According to the invention the electrically conductive connecting means is partly (50, 52, 54, 56, 57, 59) produced by means of a thermal injection method and partly (51, 53, 55, 58, 63, 64) by means of electroplating.
Description
Beschreibung description
Titel title
Kontaktsvstem mit einem Verbindungsmittel und Verfahren Kontaktsvstem with a lanyard and method
Stand der Technik State of the art
Die Erfindung betrifft ein Kontaktsystem. Das Kontaktsystem umfasst wenigstens ein insbesondere elektronisches Bauelement. Das Bauelement weist wenigstens einen elektrischen Anschluss auf. Das Kontaktsystem weist wenigstens eine elektrisch leitfähige Schicht auf. Der Anschluss des Bauelements und die elektrisch leitfähige Schicht sind mittels eines elektrisch leitfähigen Verbindungsmittels miteinander verbunden. The invention relates to a contact system. The contact system comprises at least one in particular electronic component. The component has at least one electrical connection. The contact system has at least one electrically conductive layer. The connection of the component and the electrically conductive layer are connected to one another by means of an electrically conductive connection means.
Bei aus dem Stand der Technik bekannten Kontaktsystemen, insbesondere wenigstens ein- oder mehrschichtige Leiterplatten, besteht das Problem, dass beim elektrischen Verbinden von Anschlüssen des Bauelements mit der elektrisch leitfähigen Schicht beispielsweise mittels Galvanisieren, sowohl der wenigstens eine elektrische Anschluss, als auch die elektrisch leitfähige Schicht mittels einer galvanisch aufgebrachten Zwischenschicht versehen sein muss, damit ein mittels Galvanisieren erzeugtes Verbindungsmittel wenigstens einen Anschluss des Bauelements mit der elektrisch leitfähigen Schicht verbinden kann, wenn ein Material des Anschlusses von dem Material der elektrisch leitfähigen Schicht verschieden ist. In known from the prior art contact systems, in particular at least single or multilayer printed circuit boards, there is the problem that when electrically connecting terminals of the device with the electrically conductive layer, for example by electroplating, both the at least one electrical connection, and the electrically conductive Layer must be provided by means of a galvanically applied intermediate layer so that a connecting means produced by galvanizing can connect at least one terminal of the device to the electrically conductive layer, when a material of the terminal is different from the material of the electrically conductive layer.
Offenbarung der Erfindung Disclosure of the invention
Aus der DE 101 53 482 ist ein Verfahren zum Behandeln einer Leiterbahn mit ei- nem thermischen Spritzverfahren bekannt, bei dem die Leiterbahn mit einer korrosionsfesten metallischen Schicht beschichtet wird.
Erfindungsgemäß ist ein Teil des elektrisch leitfähigen Verbindungsmittels mittels eines thermischen Spritzverfahrens, und ein weiterer Teil des Verbindungsmittels mittels Galvanisieren erzeugt. Durch das thermische Spritzverfahren kann vorteilhaft eine Basisschicht gebildet sein, so dass das Verbindungsmittel vorteilhaft zum überwiegenden Teil aus einem mittels Galvanisieren erzeugten Material gebildet sein kann. Vorteilhaft kann so für den mittels Galvanisieren erzeugten Teil des Verbindungsmittels, im Folgenden auch galvanisches Verbindungsmittel genannt, eine durch die Basisschicht gebildete Keimschicht gebildet sein, auf die das galvanische Verbindungsmittel aufwachsen kann. Unter Galvanisieren wird ein elektrochemisches Abscheiden eines Metalls einer Elektrode oder eines Metall-Ions eines Elektrolyten verstanden. Durch das Abscheiden kann das mittels Galvanisieren erzeugte Verbindungsmittel auf der mittels thermischen Spritzen erzeugten Schicht aufwachsen. From DE 101 53 482 a method for treating a conductor track with a thermal spraying method is known in which the conductor track is coated with a corrosion-resistant metallic layer. According to the invention, a part of the electrically conductive connection means is produced by means of a thermal spraying method, and a further part of the connection means is produced by means of electroplating. By virtue of the thermal spraying method, a base layer may advantageously be formed so that the connecting means can advantageously be formed predominantly of a material produced by electroplating. Advantageously, for the part of the connection means produced by electroplating, hereinafter also referred to as galvanic connection means, a seed layer formed by the base layer can be formed, onto which the galvanic connection means can grow. Electroplating is understood as meaning an electrochemical deposition of a metal of an electrode or of a metal ion of an electrolyte. As a result of the deposition, the connection means produced by electroplating can grow up on the layer produced by means of thermal spraying.
Weiter vorteilhaft kann mittels des thermischen Spritzverfahrens während des Verbindens eine Oxidschicht von dem elektrischen Anschluss entfernt werden, sodass zum elektrischen Verbinden eine Anwendung galvanisch erzeugter Zwischenschichten nicht notwendig ist. Es wurde nämlich erkannt, dass durch das mittels thermischem Spritzen aufgebrachte Verbindungsmittel, insbesondere durch das Entfernen der Oxidschicht beim Spritzprozess, eine intermetallische stoffschlüssige Verbindung - vergleichbar mit einem Lötprozess - zwischen dem gespritzten Verbindungsmittel und dem elektrischen Anschluss erzeugt werden kann. Dadurch kann beispielsweise ein Anschluss des Bauelements aus Aluminium mit einer thermisch gespritzten Kupferschicht stoffschlüssig verbunden werden. In einer bevorzugten Ausführungsform ist mittels des thermischen Spritzverfahrens eine Basisschicht des Verbindungsmittels gebildet, auf die das mittels Galvanisieren erzeugte Verbindungsmittel anschließt. Further advantageously, an oxide layer can be removed from the electrical connection by means of the thermal spraying method during the connection, so that an application of galvanically generated intermediate layers is not necessary for electrical connection. It has namely been recognized that an intermetallic cohesive connection-comparable to a soldering process-can be produced between the injection-molded connection means and the electrical connection by means of the connection means applied by means of thermal spraying, in particular by removing the oxide layer during the injection process. As a result, for example, a connection of the component made of aluminum with a thermally sprayed copper layer can be materially connected. In a preferred embodiment, by means of the thermal spraying method, a base layer of the connecting means is formed, which is followed by the connecting means produced by galvanizing.
Durch die mittels thermischen Spritzen erzeugte Basisschicht kann vorteilhaft eine Legierungsschicht gebildet sein, die ein Metall des elektrischen Anschlusses aufweist. So kann vorteilhaft eine stoffschlüssige Verbindung bis hin zu der elekt- risch leitfähigen Schicht mittels Galvanisieren anschließen. Beispielsweise ist der elektrische Anschluss aus Aluminium, das gespritzte Verbindungsmittel ist gespritztes Kupfer und das galvanisch aufgewachsene Verbindungsmittel - bevorzugt bis hin zu einer elektrisch leitfähigen Schicht - ist Kupfer. Ohne thermisches Kupferspritzen wäre beispielsweise eine galvanisch erzeugte Zwischenschicht, beispielsweise eine Nickel-Palladium-Gold-Zwischenschicht auf dem Aluminium-
anschluss erforderlich, um von dem Anschluss bis hin zu der elektrisch leitfähigen Schicht ein Verbindungsmittel zu erzeugen. The base layer produced by means of thermal spraying can advantageously form an alloy layer which has a metal of the electrical connection. Thus, advantageously, a cohesive connection can be connected up to the electrically conductive layer by means of electroplating. For example, the electrical connection is made of aluminum, the injection-molded connection means is sprayed copper and the galvanically grown connection means - preferably as far as an electrically conductive layer - is copper. Without thermal copper spraying, for example, a galvanically generated intermediate layer, for example a nickel-palladium-gold intermediate layer on the aluminum required connection to produce a connection means from the terminal to the electrically conductive layer.
Beispiele für ein thermisches Spritzverfahren sind Plasmaspritzen, APS- Plasmaspritzen (APS = Atmospherical-Plasma-Spray), HVOF- Hochgeschwindigkeits-Flammspritzen (HVOF = High-Velocity-Oxy-Fuel), Examples of a thermal spraying method are plasma spraying, APS plasma spraying (APS = Atmospheric Plasma Spray), HVOF high-velocity oxy-fuel (HVOF),
HVFSF-Suspensions-Flammspritzen (HVFSF = High-Velocity-Fuel-Suspensed- Flamespray) oder Kaltgasspritzen. HVFSF suspension flame spraying (HVFSF = High Velocity Fuel-Suspensed Flame Spray) or cold gas spraying.
Das Verbindungsmittel ist bevorzugt ein elektrisch leitfähiges Metall oder eine elektrisch leitfähige Legierung zueinander verschiedener Metalle. Ein beispielhaf- tes Metall ist Kupfer oder Aluminium. Das Verbindungsmittel umfasst bevorzugt The connecting means is preferably an electrically conductive metal or an electrically conductive alloy of mutually different metals. An exemplary metal is copper or aluminum. The connecting means preferably comprises
Kupfer und/oder Aluminium. Weiter bevorzugt ist das Verbindungsmittel Kupfer. .Copper and / or aluminum. More preferably, the connecting means is copper. ,
In einer vorteilhaften Ausführungsform des Kontaktsystems ist der elektrische Anschluss und/oder das Bauelement, insbesondere ein Gehäuse des Bauelements, durch einen Durchbruch in der elektrisch leitfähigen Schicht hindurch mit- tels des insbesondere elektrisch leitfähigen Verbindungsmittels mit der elektrisch leitfähigen Schicht verbunden. Vorteilhaft kann nämlich mittels des thermischen Spritzverfahrens ein elektrischer Anschluss mit der elektrisch leitfähigen Schicht durch einen schmalen Spalt oder einen kleinen Durchbruch verbunden werden, wohingegen beispielsweise ein Lot in einem Lötwellenbad nicht eindringen kann. Ein beispielhafter Durchmesser für einen Durchbruch beträgt zwischen 10 und 50In an advantageous embodiment of the contact system, the electrical connection and / or the component, in particular a housing of the component, is connected to the electrically conductive layer through an opening in the electrically conductive layer by means of the in particular electrically conductive connection means. Advantageously, namely by means of the thermal spraying method, an electrical connection to the electrically conductive layer can be connected by a narrow gap or a small opening, whereas, for example, a solder can not penetrate in a Lötwellenbad. An exemplary diameter for a breakthrough is between 10 and 50
Mikrometer, bevorzugt zwischen 20 und 40 Mikrometer, bevorzugt zwischen 20 und 30 Mikrometer. Micrometer, preferably between 20 and 40 micrometers, preferably between 20 and 30 micrometers.
Bei einem thermischen Kontaktieren des Bauelements, insbesondere eines elektrisch isolierenden Gehäuses oder einer elektrisch isolierenden Hülle des Bau- elements ist das Verbindungsmittel bevorzugt wärmeleitend ausgebildet und verbindet das Bauelement mit der elektrisch leitfähigen Schicht wärmeleitend. Die elektrisch leitfähige Schicht - beispielsweise Kupfer - ist bevorzugt wärmeleitend ausgebildet, so dass die Wärme aus dem Bauelement über das Verbindungsmittel in die Schicht abgeführt werden kann. Die Wärme kann von der Schicht an ei- ne Umgebung oder an eine weitere Komponente, beispielsweise einen Kühlkörper abgegeben werden. In the case of a thermal contacting of the component, in particular of an electrically insulating housing or an electrically insulating shell of the component, the connecting means is preferably of heat-conducting construction and connects the component to the electrically conductive layer in a heat-conducting manner. The electrically conductive layer - for example copper - is preferably formed thermally conductive, so that the heat can be dissipated from the device via the connecting means in the layer. The heat can be released from the layer to an environment or to another component, for example a heat sink.
Unabhängig von dem Kontaktsystem, bei dem ein elektrischer Anschluss des Bauelements mit der elektrisch leitfähigen Schicht verbunden ist, kann das Bauelement bei einem Kontaktsystem mittels des Verbindungsmittels, umfassend die
mittels thermischen Spritzens erzeugte Basisschicht und die galvanisch erzeugte Schicht, mit der wärmeleitfähigen oder zusätzlich elektrisch leitfähigen Schicht verbunden sein. Regardless of the contact system in which an electrical connection of the component is connected to the electrically conductive layer, the component in a contact system by means of the connecting means, comprising the Base layer produced by thermal spraying and the electrodeposited layer, be connected to the thermally conductive or additionally electrically conductive layer.
Die Verbindung des Bauelements, bevorzugt eines elektrisch isolierenden Teils des Bauelements und/oder eines Teils des Bauelements, das keinen elektrischen The connection of the component, preferably an electrically insulating part of the component and / or a part of the component that does not have an electrical
Anschluss bildet, mit der Schicht erfolgt bevorzugt mittels des Verbindungsmittels durch einen Durchbruch in der elektrisch leitfähigen Schicht. Connection forms with the layer is preferably carried out by means of the bonding agent through an opening in the electrically conductive layer.
Durch die thermisch gespritzte Basisschicht auf einem Kunststoffgehäuse oder einem Halbleitermaterial eines gehäuselosen Halbleiterbauelements, auch Bare- Die genannt, kann eine galvanisch erzeugte Schicht an das Bauelement auf die Due to the thermally sprayed base layer on a plastic housing or a semiconductor material of a housing-free semiconductor device, also called bare die, a galvanically generated layer to the device on the
Basisschicht stoffschlüssig anschließen und so einen Hauptbestandteil eines Verbindungsmittel als Wärmeleiter bilden. Die auf einen Kunststoff thermisch aufgespritzte Basisschicht bildet vorteilhaft eine Bekeimungsschicht als Startpro- zess für eine darauf aufbauende mittels Galvanisieren erzeugte Schicht. Die Ba- sisschicht auf Kunststoff umfasst bevorzugt Palladium. Connect base layer cohesively and thus form a main component of a connecting means as a heat conductor. The base layer thermally sprayed onto a plastic advantageously forms a seed layer as a starting process for a layer produced thereon by electroplating. The base layer on plastic preferably comprises palladium.
Vorteilhaft kann so die elektrische Verbindung, insbesondere das elektrisch leitfähige Verbindungsmittel, durch eine Schicht gebildet sein, welche ausgehend vom elektrischen Anschluss durch den Durchbruch hindurch bis zur elektrisch leitfähigen Schicht gelangt. Im Falle der Verbindung von dem Bauelement oder einem Gehäuse des Bauelements bis hin zur elektrisch leitfähigen Schicht kann vorteilhaft Wärme von dem Bauelement beziehungsweise Gehäuse über das Verbindungsmittel in die thermisch leitfähige oder zusätzlich elektrisch leitfähige Schicht geleitet werden. Dazu kann das Verbindungsmittel - beispielsweise ein Metall - vorteilhaft wärmeleitend oder elektrisch leitfähig und wärmeleitend aus- gebildet sein. In einer anderen Ausführungsform ist das Verbindungsmittel ein nur wärmeleitfähiges Verbindungsmittel, das elektrisch isolierend ausgebildet ist, beispielsweise Siliziumdioxid oder Aluminiumoxid, insbesondere Keramik. Advantageously, the electrical connection, in particular the electrically conductive connection means, can thus be formed by a layer which, starting from the electrical connection, passes through the opening through to the electrically conductive layer. In the case of the connection of the component or a housing of the component to the electrically conductive layer, heat can advantageously be conducted from the component or housing via the connecting means into the thermally conductive or additionally electrically conductive layer. For this purpose, the connecting means-for example, a metal-can advantageously be thermally conductive or electrically conductive and thermally conductive. In another embodiment, the connecting means is a heat-conductive connecting means only, which is designed to be electrically insulating, for example silicon dioxide or aluminum oxide, in particular ceramic.
So kann vorteilhaft Material zum Erzeugen des elektrischen Verbindungsmittels eingespart werden. In einer anderen Ausführungsform kann mittels des thermi- sehen Spritzverfahrens auch eine Basisschicht eines elektrisch leitfähiges Verbindungsmittels erzeugt werden, mit dem der Durchbruch oder der zuvor beschriebenen Spalt vollständig ausgefüllt ist. Thus, advantageously, material for producing the electrical connection means can be saved. In another embodiment, by means of the thermal spraying method, it is also possible to produce a base layer of an electrically conductive connection means with which the aperture or the previously described gap is completely filled.
In einer bevorzugten Ausführungsform sind das Material des elektrischen Anschlusses und das Material der elektrisch leitfähigen Schicht zueinander ver-
schieden. Mittels des thermischen Spritzverfahrens können zueinander verschiedene Materialien miteinander verbunden werden, wobei das elektrische Verbindungsmittel sowohl mit dem elektrischen Anschluss, beispielsweise Aluminium, als auch mit der elektrisch leitfähigen Schicht, beispielsweise Kupfer, über die Basisschicht eine stoffschlüssige Verbindung eingeht. Weiter vorteilhaft wurde erkannt, dass während des Erzeugens des elektrischen Verbindungsmittels sowohl eine Oxidschicht auf dem Anschluss als auch auf der elektrisch leitfähigen Schicht entfernt werden kann, was ein Ausbilden der stoffschlüssigen, intermetallischen Verbindung erleichtert oder überhaupt ermöglicht. In a preferred embodiment, the material of the electrical connection and the material of the electrically conductive layer are mutually connected. eliminated. By means of the thermal spraying method, materials which are different from one another can be connected to one another, wherein the electrical connection means enters into a material-bonding connection with the electrical connection, for example aluminum, as well as with the electrically conductive layer, for example copper. It has also been found to be advantageous that both an oxide layer on the connection and on the electrically conductive layer can be removed during the production of the electrical connection means, which facilitates or even makes it possible to form the integral intermetallic compound.
Beispielhafte Kombinationen von Materialien sind Kupfer oder Aluminium, insbesondere eine Aluminiumlegierung für die elektrisch leitfähige Schicht, und Zinn, Kupfer, Gold oder Silber für das Material des elektrischen Anschlusses. Exemplary combinations of materials are copper or aluminum, in particular an aluminum alloy for the electrically conductive layer, and tin, copper, gold or silver for the material of the electrical connection.
In einer bevorzugten Ausführungsform des Kontaktsystems ist das Bauelement zwischen der elektrisch leitfähigen Schicht und einer elektrisch isolierenden Schicht eingeschlossen, insbesondere einlaminiert. Bevorzugt ist die elektrisch isolierende Schicht eine faserverstärkte Trägerschicht, insbesondere eine glasfaserverstärkte Epoxidharzschicht. In einer anderen Ausführungsform ist die elektrisch isolierende Schicht durch eine Kunststofffolie, insbesondere eine In a preferred embodiment of the contact system, the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer. The electrically insulating layer is preferably a fiber-reinforced carrier layer, in particular a glass-fiber-reinforced epoxy resin layer. In another embodiment, the electrically insulating layer is covered by a plastic film, in particular a
Polypropylen, Polyethylen oder eine andere Folie gebildet. So können die elekt- ronischen Bauelemente zwischen die elektrisch leitfähige Schicht und die elektrisch isolierende Schicht, insbesondere vor Verschmutzung oder äußerer Einwirkung eingeschlossen sein, wobei die elektrisch isolierende Schicht bevorzugt eine Trägerschicht zum mechanischen Tragen des Kontaktsystems, bevorzugt als Bestandteil einer Schaltungsanordnung, dient. Polypropylene, polyethylene or another film formed. Thus, the electronic components can be enclosed between the electrically conductive layer and the electrically insulating layer, in particular against contamination or external influence, the electrically insulating layer preferably serving as a carrier layer for mechanically supporting the contact system, preferably as part of a circuit arrangement.
In einer bevorzugten Ausführungsform ist das Bauelement wenigstens teilweise in ein Polymer eingebettet, insbesondere eingespritzt oder mittels eines Mold- Verfahrens eingeschmolzen. Das Polymer ist beispielsweise ein Polyacrylat, Polypropylen, Polyamid, Epoxidharz oder ein vergleichbarer Kunststoff. In a preferred embodiment, the component is at least partially embedded in a polymer, in particular injected or fused by means of a molding process. The polymer is, for example, a polyacrylate, polypropylene, polyamide, epoxy resin or a comparable plastic.
Mittels des Polymers kann vorteilhaft eine Trägerschicht zum mechanischen Tra- gen des Kontaktsystems gebildet sein. Weiter vorteilhaft kann das Kontaktsystem, bevorzugt als Bestandteil einer Schaltungsanordnung, mittels des Polymers in einen Gehäuseblock - insbesondere vor äußerer Einwirkung geschützt - eingeschlossen sein.
In einer vorteilhaften Ausführungsform kontaktiert die Basisschicht des elektrisch leitfähigen Verbindungsmittels den elektrischen Anschluss unmittelbar. So braucht der elektrische Anschluss vorteilhaft nicht - beispielsweise mittels eines zusätzlichen galvanischen Prozesses - mit einer Zwischenschicht überzogen sein, um daraufhin mit der elektrisch leitfähigen Schicht verbunden zu werden. By means of the polymer can advantageously be formed a support layer for mechanical loading of the contact system. Further advantageously, the contact system, preferably as part of a circuit arrangement, by means of the polymer in a housing block - especially protected against external influences - be included. In an advantageous embodiment, the base layer of the electrically conductive connection means contacts the electrical connection directly. Thus, the electrical connection advantageously does not need to be coated with an intermediate layer, for example by means of an additional galvanic process, in order then to be connected to the electrically conductive layer.
Die Erfindung betrifft auch ein Verfahren zum elektrischen Verbinden wenigstens eines elektrischen Anschlusses eines insbesondere elektronischen Bauelements mit wenigstens einer elektrisch leitfähigen Schicht. Die elektrisch leitfähige Schicht ist beispielsweise eine Schicht zum Ausbilden wenigstens einer Leiterbahn des Kontaktsystems. Das Kontaktsystem ist beispielsweise eine ein- oder mehrschichtig ausgebildete Leiterplatte. Bevorzugt ist das Kontaktsystem Bestandteil einer Schaltungsanordnung. The invention also relates to a method for electrically connecting at least one electrical connection of a particular electronic component with at least one electrically conductive layer. The electrically conductive layer is, for example, a layer for forming at least one conductor track of the contact system. The contact system is for example a single-layer or multi-layer printed circuit board. Preferably, the contact system is part of a circuit arrangement.
Bevorzugt wird der elektrische Anschluss mit der elektrisch leitfähigen Schicht mittels eines elektrisch leitfähigen Verbindungsmittels verbunden. Das elektrisch leitfähige Verbindungsmittel wird bevorzugt zum Teil mittels eines thermischen Spritzverfahrens und zum Teil mittels Galvanisieren erzeugt. The electrical connection is preferably connected to the electrically conductive layer by means of an electrically conductive connection means. The electrically conductive connection means is preferably produced partly by means of a thermal spraying method and partly by means of electroplating.
In einer bevorzugten Variante des Verfahrens wird der elektrische Anschluss und/oder das Bauelement oder ein Gehäuse des Bauelements durch einen Durchbruch in der elektrisch leitfähigen Schicht hindurch mittels des elektrisch leitfähigen Verbindungsmittels mit der elektrisch leitfähigen Schicht verbunden. Das Verbindungsmittel umfasst eine thermisch gespritzte Basisschicht und eine mittels Galvanisieren erzeugte Hauptschicht. In a preferred variant of the method, the electrical connection and / or the component or a housing of the component is connected to the electrically conductive layer by means of the electrically conductive connection means through an opening in the electrically conductive layer. The connecting means comprises a thermally sprayed base layer and a main layer produced by electroplating.
Die mittels Galvanisieren erzeugte Hauptschicht weist bevorzugt eine größere Schichtdicke auf als die Basisschicht. Bevorzugt wird die Basisschicht nur auf dem Anschluss ausgebildet. Bevorzugt wird eine Bekeimung einer Wand des Durchbruchs - insbesondere mit Kupfer - galvanisch erzeugt. The main layer produced by electroplating preferably has a greater layer thickness than the base layer. Preferably, the base layer is formed only on the terminal. Preferably, a germination of a wall of the opening - in particular with copper - produced galvanically.
In einer anderen Ausführungsform wird die Basisschicht auf dem Anschluss und auf einer Wand des Durchbruchs ausgebildet. Die erwähnte galvanische In another embodiment, the base layer is formed on the terminal and on a wall of the aperture. The mentioned galvanic
Bekeimung der Wand kann dann entfallen. Germination of the wall can then be omitted.
Im Falle der Verbindung von dem Bauelement oder Gehäuse des Bauelements bis hin zur elektrisch leitfähigen Schicht kann vorteilhaft Wärme von dem Gehäuse über das Verbindungsmittel in die elektrisch leitfähige Schicht abgeführt werden.
Bevorzugt sind das Material des elektrischen Anschlusses und das Material der elektrisch leitfähigen Schicht zueinander verschieden. Weiter bevorzugt kontaktiert das Material den elektrischen Anschluss und/oder die elektrisch leitfähige Schicht unmittelbar. In the case of the connection of the component or housing of the component to the electrically conductive layer, heat can advantageously be dissipated from the housing via the connecting means into the electrically conductive layer. The material of the electrical connection and the material of the electrically conductive layer are preferably different from one another. More preferably, the material contacts the electrical connection and / or the electrically conductive layer directly.
Das unmittelbare Kontaktieren bedeutet, dass der elektrische Anschluss bevorzugt wenigstens in einem zum Verbundenwerden mit dem Material ausgebildeten Bereich bevorzugt massiv aus einem vorbestimmten Material, beispielsweise Aluminium, gebildet ist. Die elektrisch leitfähige Schicht ist bevorzugt in einem Bereich, welcher zum Verbundenwerden mit dem Material ausgebildet ist, massiv aus einem vorbestimmten Material, beispielsweise Kupfer, gebildet. The direct contacting means that the electrical connection is preferably formed preferably solid at least in an area formed to be connected to the material of a predetermined material, for example aluminum. The electrically conductive layer is preferably formed in a region, which is formed to be connected to the material, solid from a predetermined material, such as copper.
In einer vorteilhaften Ausführungsvariante des Verfahrens wird das Bauelement zwischen die elektrisch leitfähige Schicht und eine elektrisch isolierende Schicht eingeschlossen, insbesondere einlaminiert, nachdem der elektrische Anschluss mittels des elektrisch leitfähigen Verbindungsmittels mit der elektrisch leitfähigen Schicht verbunden worden ist. So kann vorteilhaft eine tragfähige Struktur erzeugt werden, nachdem die elektrischen Anschlüsse mit wenigstens einem Bereich oder einem Teil der elektrisch leitfähigen Schicht, beispielsweise mit einer Leiterbahn, verbunden worden sind. In an advantageous embodiment variant of the method, the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer, after the electrical connection has been connected to the electrically conductive layer by means of the electrically conductive connection means. Thus, a viable structure can advantageously be produced after the electrical connections have been connected to at least one area or part of the electrically conductive layer, for example to a conductor track.
Die Erfindung wird nun im Folgenden anhand von Figuren und weiteren Ausfüh- rungsbeispielen beschrieben. Weitere vorteilhafte Ausführungsvarianten ergeben sich aus den in den abhängigen Ansprüchen angegebenen Merkmalen sowie aus den in den Figuren beschriebenen Merkmalen. The invention will now be described below with reference to figures and further exemplary embodiments. Further advantageous embodiments will become apparent from the features indicated in the dependent claims and from the features described in the figures.
Figur 1 a zeigt ein Ausführungsbeispiel für ein Verfahren zum Erzeugen eines Kontaktsystems. Bei dem Verfahren wird in einem Schritt 70 ein Klebemittel, ins- besondere Klebstoff, in diesem Ausführungsbeispiel ein Klebemittel 12 und 14 jeweils in Form eines Tropfens auf eine elektrisch leitfähige Folie 10, zuvor auch elektrisch leitfähige Schicht genannt, aufgebracht. Die Folie ist beispielsweise eine Kupferfolie. Beispielsweise kann das Klebemittel, in diesem Ausführungsbeispiel die Klebemittel 12 und 14, mittels einer Maske auf die Kupferfolie 10 aufge- druckt werden oder auf die Kupferfolie 10 aufgespritzt werden. Das Klebemittel kann - anders als in Figur 1 a dargestellt - durch eine selbstklebende Folie gebildet sein. Das Klebemittel kann beispielsweise ein lösungsmittelhaltiges Klebemittel sein, welches seine Viskosität nach Verdampfen des Lösungsmittels ändert oder ein heißschmelzendes Klebemittel. In einer anderen Ausführungsform ist das Klebemittel ein Epoxidharzklebstoff oder ein Acrylatklebstoff, welcher ausge-
bildet ist, in Abhängigkeit von Wärmeeinwirkung oder Ultraviolettstrahlung auszuhärten, insbesondere zu auszupolymerisieren. FIG. 1a shows an exemplary embodiment of a method for producing a contact system. In the method, an adhesive, in particular adhesive, in this exemplary embodiment, an adhesive 12 and 14 each in the form of a drop on an electrically conductive film 10, previously also called electrically conductive layer applied. The foil is, for example, a copper foil. For example, the adhesive, in this embodiment the adhesives 12 and 14, can be printed onto the copper foil 10 by means of a mask or sprayed onto the copper foil 10. The adhesive may - be formed by a self-adhesive film - unlike in Figure 1 a. The adhesive may be, for example, a solvent-containing adhesive which changes its viscosity after evaporation of the solvent or a hot-melt adhesive. In another embodiment, the adhesive is an epoxy adhesive or an acrylate adhesive, which forms, depending on heat or ultraviolet radiation curing, in particular to be polymerized out.
Die Klebemittel 12 und 14 enthalten jeweils Festkörper, welche in diesem Ausführungsbeispiel kugelförmig ausgebildet sind. Die Festkörper 16 und 18 sind beispielhaft bezeichnet. In einem Verfahrensschritt 71 werden elektronische Bauteile, in diesem Ausführungsbeispiel ein integrierter Schaltkreis 20 und ein integrierter Schaltkreis 22, mittels des Klebemittels 14 beziehungsweise 12 mit der Kupferfolie 10 verklebt. Der integrierte Schaltkreis 20 wird dazu auf das Klebemittel 14 aufgedrückt. Der integrierte Schaltkreis 20 lässt sich dabei so weit mit der Kupferfolie 10 zusammenbringen, bis der integrierte Schaltkreis 20 auf die Festkörper, in diesem Ausführungsbeispiel auf die Festkörper umfassend den Festkörper 18 trifft und nicht mehr näher an die Kupferfolie angedrückt werden kann. Dargestellt ist auch der integrierte Schaltkreis 22, welcher auf das Klebemittel 12 aufgedrückt worden ist. Das Klebemittel 12 umfasst in diesem Ausführungsbeispiel auch Festkörper, von denen der Festkörper 16 beispielhaft bezeichnet ist. The adhesives 12 and 14 each contain solid bodies, which are spherical in this embodiment. The solids 16 and 18 are exemplified. In a method step 71, electronic components, in this embodiment an integrated circuit 20 and an integrated circuit 22, are glued to the copper foil 10 by means of the adhesive 14 or 12. The integrated circuit 20 is for this purpose pressed onto the adhesive 14. The integrated circuit 20 can be brought together so far with the copper foil 10 until the integrated circuit 20 on the solids, in this embodiment, the solids comprising the solid 18 meets and can not be pressed closer to the copper foil. Shown is also the integrated circuit 22, which has been pressed onto the adhesive 12. The adhesive 12 in this embodiment also includes solids, of which the solid 16 is exemplified.
In einem Schritt 72 werden die integrierten Schaltkreise 20 und 22 mittels eines Laminats, beispielsweise einer Laminatfolie 30 als elektrisch isolierende Schicht zusammen mit der Kupferfolie 10 einlaminiert. Die integrierten Schaltkreise 20 und 22 sind nach dem Einlaminieren wenigstens vor mechanischer Einwirkung geschützt. Durch die Laminatfolie 30 kann vorteilhaft ein Schaltungsträger gebildet sein, in welchen die Schaltkreise 20 und 22 integriert sind. In a step 72, the integrated circuits 20 and 22 are laminated by means of a laminate, for example a laminate film 30 as an electrically insulating layer together with the copper foil 10. The integrated circuits 20 and 22 are protected after being laminated at least against mechanical impact. The laminate film 30 may advantageously form a circuit carrier in which the circuits 20 and 22 are integrated.
Unabhängig oder zusätzlich zu dem Laminieren mittels der Laminatfolie 30 können die integrierten Schaltkreise 20 und 22 auch mittels eines Mold-Verfahrens mittels einer Mold-Masse eingebettet, beispielsweise eingeschmolzen oder eingespritzt werden. Die integrierten Schaltkreise sind so weitergeschützt sein. Independently or in addition to the lamination by means of the laminate film 30, the integrated circuits 20 and 22 can also be embedded, for example melted or injected, by means of a molding process by means of a molding compound. The integrated circuits will be so protected.
Der integrierte Schaltkreis 20 weist elektrische Anschlüsse auf, wobei ein elektrischer Anschluss 24 beispielhaft bezeichnet ist. Die elektrischen Anschlüsse sind beispielsweise wenigstens in einem zum Verbinden mit einer elektrischen Leiterbahn vorgesehenen Bereich beispielsweise aus Aluminium oder einer Aluminiumlegierung gebildet. The integrated circuit 20 has electrical connections, wherein an electrical connection 24 is designated by way of example. The electrical connections are formed, for example, at least in a region intended for connection to an electrical conductor, for example, of aluminum or an aluminum alloy.
Der integrierte Schaltkreis 22 weist - wie der integrierte Schaltkreis 20 - elektrische Anschlüsse auf, von denen der elektrische Anschluss 26 beispielhaft bezeichnet ist. Die elektrischen Anschlüsse des integrierten Schaltkreises 22 wei-
sen in einem Bereich zum elektrischen Verbinden mit einer Leiterbahn beispielsweise Aluminium auf. The integrated circuit 22 has - like the integrated circuit 20 - electrical connections, of which the electrical connection 26 is exemplified. The electrical connections of the integrated circuit 22 sen in an area for electrical connection to a conductor track, for example, aluminum.
In einem Verfahrensschritt 73 werden - beispielsweise mittels eines Lasers oder photolithographisch und mittel Ätzen - Aussparungen 40, 42, 44 und 46 durch die Kupferfolie 10 und die Klebemittel 12 und 14 hindurch gebohrt. Die Aussparungen 40, 42, 44 und 46 reichen jeweils bis zu einem elektrischen Anschluss eines integrierten Schaltkreises hin. Die Aussparung 40 erstreckt sich bis zu dem Anschluss 24. Die Aussparung 44 erstreckt sich bis zu dem Anschluss 26. In a method step 73, recesses 40, 42, 44 and 46 are bored through the copper foil 10 and the adhesives 12 and 14, for example by means of a laser or photolithographically and by means of etching. The recesses 40, 42, 44 and 46 each extend to an electrical connection of an integrated circuit. The recess 40 extends to the terminal 24. The recess 44 extends to the terminal 26th
Entsprechend Figur 1 b wird in einem Verfahrensschritt 74 dann die zuvor ge- bohrten Aussparungen mittels eines thermischen Spritzverfahrens, beispielsweise mittels eines Plasmaspray-Verfahrens, mittels eines elektrisch leitfähigen Materials als Verbindungsmittel - beispielsweise einer Legierung umfassend Kupfer und/oder Aluminium - teilweise aufgefüllt und so eine elektrische leitfähige Basisschicht erzeugt. In einem weiteren Schritt kann dann eine weitere Schicht gal- vanisch auf die Basisschicht aufgebracht werden. So ist dann ein Beispiel für ein vorab erwähntes Kontaktsystem gebildet, bei dem die Anschlüsse jeweils mit einer Folie, insbesondere mit einem Flächenabschnitt der Folie - beispielsweise einer Leiterbahn - elektrisch verbunden sind. Die elektrisch leitfähige Schicht kann vor dem thermischen Spritzen in die Aussparungen hinein mit einer Maske, beispielsweise einem Photolack abgedeckt werden. So kann eine Kontamination von Bereichen in der Umgebung der Aussparung vermieden werden. Die Maske kann nach dem thermischen Spritzen entfernt werden. According to FIG. 1 b, in a method step 74, the previously drilled recesses are then partially filled by means of a thermal spraying method, for example by means of a plasma spray method, by means of an electrically conductive material as connecting means, for example an alloy comprising copper and / or aluminum, and so on generates an electrically conductive base layer. In a further step, a further layer can then be galvanically applied to the base layer. Thus, an example of a previously mentioned contact system is then formed, in which the terminals are each electrically connected to a film, in particular to a surface section of the film, for example a conductor track. The electrically conductive layer can be covered with a mask, for example a photoresist, before the thermal spraying into the recesses. Thus, contamination of areas in the vicinity of the recess can be avoided. The mask can be removed after thermal spraying.
Eine Plasmaspray-Düse 60 ist beispielsweise dargestellt, aus der elektrisch leitfähiges Material in diesem Ausführungsbeispiel in Form von elektrisch leitfähigen Spraypartikeln in die Aussparung 40 gespritzt wird, wo sich die Spraypartikel zu einem elektrisch leitfähigen Verbindungsmittel zusammenfügen und so die Basisschicht 50 des elektrisch leitfähigen Verbindungsmittels bilden. A plasma spray nozzle 60 is shown, for example, is sprayed from the electrically conductive material in the form of electrically conductive spray particles in the recess 40, where the spray particles join together to form an electrically conductive connection means, thus forming the base layer 50 of the electrically conductive connection means ,
Die elektrisch leitfähige Folie 10 ist so mittels des Verbindungsmittels 50 elektrisch leitend mit dem Anschluss 24 verbunden. Vorteilhaft wird während des elektrischen Verbindens des Anschlusses 24 mit der Folie 10 sowohl vom elektrischen Anschluss 24 als auch von der Folie 10 störende Oxide und/oder Kontaminationen mit anderen Stoffen entfernt. The electrically conductive foil 10 is thus electrically conductively connected to the connection 24 by means of the connection means 50. Advantageously, during the electrical connection of the terminal 24 with the film 10, both the electrical connection 24 and the film 10 remove interfering oxides and / or contaminations with other substances.
Dadurch ist ein guter elektrischer Kontakt und ein intermetallischer Stoffschluss von dem Anschluss in die Basisschicht hinein gebildet.
Entsprechend der Figur 1 c ist in einem Verfahrensschritt 75 ein zweischichtiger Aufbau eines Kontaktsystems dargestellt, umfassend zwei Schichten, jeweils gebildet durch eine Folie, nämlich die Folien 10 und 1 1. Denkbar ist auch ein Kontaktsystem mit mehr als zwei Schichten als Bestandteil einer Schaltungsanord- nung. As a result, a good electrical contact and an intermetallic material bond is formed from the terminal into the base layer. 1 c, a two-layer structure of a contact system is shown in a method step 75, comprising two layers, each formed by a film, namely the films 10 and 1. Also conceivable is a contact system with more than two layers as part of a circuit arrangement. voltage.
In dem Verfahrensschritt 75 werden dann die Aussparungen in denen zuvor die Basisschicht ausgebildet wurde, mittels Galvanisieren mit einem elektrisch leitfähigen Verbindungsmittel, beispielsweise Kupfer ausgefüllt, so dass die elektrisch leitfähige Schicht 10 mit den Anschlüssen 24 und 26 verbunden ist. Das Verbin- dungsmittel, das den Anschluss 24 mit der Schicht 10 verbindet, umfasst die Basisschicht 50 und einen galvanisch erzeugten Teil 51 des Verbindungsmittels. Dargestellt ist auch ein in der Aussparung 42 ausgebildetes Verbindungsmittel umfassend eine mittels thermischen Spritzens erzeugte Basisschicht 52 und einen galvanisch erzeugten Teil 53 des Verbindungsmittels, der auf der Basis- schicht ausgebildet ist. Die Aussparung 44 wird in dem Schritt 75 mit einer mittels thermischen Spritzens erzeugten Basisschicht 54 und einen galvanisch erzeugten Teil 55 des Verbindungsmittels ausgefüllt. Die Aussparung 46 wird in dem Schritt 75 mit einer mittels thermischen Spritzens erzeugten Basisschicht 56 und einen galvanisch erzeugten Teil 58 des Verbindungsmittels ausgefüllt. In the method step 75, the recesses in which the base layer was previously formed are then filled by means of electroplating with an electrically conductive connecting means, for example copper, so that the electrically conductive layer 10 is connected to the terminals 24 and 26. The connection means which connects the connection 24 to the layer 10 comprises the base layer 50 and a galvanically generated part 51 of the connection means. Shown is also a connecting means formed in the recess 42, comprising a base layer 52 produced by means of thermal spraying and a galvanically produced part 53 of the connecting means, which is formed on the base layer. The recess 44 is filled in step 75 with a base layer 54 produced by thermal spraying and a galvanically produced part 55 of the connecting means. The recess 46 is filled in step 75 with a base layer 56 produced by thermal spraying and a galvanically produced part 58 of the connecting means.
Dargestellt ist auch eine Folie 1 1 , beispielsweise eine Kupferfolie, welche mit einem Laminat gebildet durch die Laminatfolie 30 verbunden ist und sich in diesem Ausführungsbeispiel parallel zur Folie 10 erstreckt. Shown is also a film 1 1, for example, a copper foil, which is formed with a laminate formed by the laminate film 30 and extends parallel to the film 10 in this embodiment.
Die Folien 10 und 1 1 schließen somit die Laminatfolie 30 mit den integrierten Schaltkreisen 20 und 22 zwischeneinander ein. The films 10 and 11 thus enclose the laminate film 30 with the integrated circuits 20 and 22 between them.
In einem zuvor ausgeführten Verfahrensschritt sind in diesem Ausführungsbeispiel Aussparungen 41 und 43 - beispielsweise mittels eines Lasers - gebohrt, welche durch die Folie 1 1 hindurch und weiter durch die Laminatfolie 30 hindurch bis hin zu einem Gehäuse des integrierten Schaltkreises 20 reichen. Mittels der Aussparungen 41 und 43 kann Wärme von dem integrierten Schaltkreis 20 abge- führt werden. In a previously executed method step, recesses 41 and 43 are drilled in this exemplary embodiment-for example by means of a laser-which extend through the film 11 and further through the laminate film 30 all the way to a housing of the integrated circuit 20. By means of the recesses 41 and 43, heat can be dissipated from the integrated circuit 20.
Zum Abführen der Wärme von dem integrierten Schaltkreis können - wie am Beispiel des integrierten Schaltkreises 22 dargestellt - mittels eines thermischen Spritzverfahrens die Aussparungen 45 und 47, welche durch die Folie 1 1 hindurch und weiter durch die Laminatfolie 30 hindurch zu einem Gehäuse des inte-
grierten Schaltkreises 22 reichen, mittels eines wärmeleitfähigen Materials 57 beziehungsweise 59 als Basisschicht des Verbindungsmittels teilweise ausgefüllt werden, sodass die Folie 1 1 mittels des thermisch leitfähigen Materials mit dem Gehäuse des integrierten Schaltkreises 22 verbunden ist. Auf die Basisschicht 57 ist eine Schicht 63 galvanisch aufgetragen, auf die Basisschicht 59 ist eineFor removing the heat from the integrated circuit can - as the example of the integrated circuit 22 shown - by means of a thermal spraying process, the recesses 45 and 47, which through the film 1 1 and further through the laminate film 30 therethrough to a housing of inte grated circuit 22 are rich, are partially filled by means of a thermally conductive material 57 and 59 as the base layer of the bonding agent, so that the film 1 1 is connected by means of the thermally conductive material to the housing of the integrated circuit 22. On the base layer 57, a layer 63 is electroplated, on the base layer 59 is a
Schicht 64 galvanisch aufgetragen. So kann vorteilhaft Wärme von dem integrierten Schaltkreis 22 an die Folie 1 1 abgeführt werden. Layer 64 applied galvanically. Thus, advantageously heat can be dissipated from the integrated circuit 22 to the film 11.
Entsprechend Figur 1 d ist auch ein Gefäß 80 dargestellt, in dem ein Elektrolyt 82 vorrätiggehalten ist. Der Elektrolyt 82 umfasst beispielsweise Schwefelsäure, Kupfersulfat, Natriumchlorid und/oder Ethanol als Glanzbildner und ein Tensid als Benetzungshilfe. Eine Stromdichte beim Galvanisieren beträgt beispielsweise 10 Milliampere pro Quadratzentimeter der elektrisch leitfähigen Schicht. Mittels einer Elektrode 84 wurden die Teile 63 und 64 der Verbindungsmittel erzeugt. Mittels einer Elektrode 86 wurden die Teile 51 , 53, 55 und 58 der Verbindungs- mittel erzeugt. Eine Dicke der flach ausgebildeten Kupferelektroden 84 und 86 beträgt beispielsweise zwischen 7 und 10 Millimeter. According to FIG. 1 d, a vessel 80 is shown in which an electrolyte 82 is kept in stock. The electrolyte 82 includes, for example, sulfuric acid, copper sulfate, sodium chloride and / or ethanol as a brightener and a surfactant as a wetting aid. A current density during electroplating is, for example, 10 milliamps per square centimeter of the electrically conductive layer. By means of an electrode 84, the parts 63 and 64 of the connecting means were produced. By means of an electrode 86, the parts 51, 53, 55 and 58 of the connecting means were produced. A thickness of the flat-shaped copper electrodes 84 and 86 is, for example, between 7 and 10 millimeters.
In einem Verfahrensschritt 76 werden dann - beispielsweise mittels eines Lasers - Vertiefungen und/oder Aussparungen in die elektrisch leitfähige Folie 10 geschnitten, sodass elektrisch leitfähige Leiterbahnen gebildet sind, welche jeweils Verbindungsleitungen eines elektrischen Schaltkreises oder einer Schaltungsanordnung bilden können. Dieser Verfahrenschritt zum Bilden von Leiterbahnen kann auch vor dem Kontaktieren, beispielsweise mittels Fotostrukturieren erfolgen. Das Fotostrukturieren umfasst beispielsweise ein Aufbringen eines Photolacks, Belichten mit einer Maske, Entfernen des Photolacks an den belichteten Flächenbereichen und Ätzen der elektrisch leitfähigen Schicht an den belichteten In a method step 76, recesses and / or recesses are cut into the electrically conductive film 10, for example by means of a laser, so that electrically conductive conductor tracks are formed, which can each form connection lines of an electrical circuit or of a circuit arrangement. This method step for forming printed conductors can also be carried out prior to contacting, for example by means of photo-patterning. The photostructuring comprises, for example, applying a photoresist, exposing with a mask, removing the photoresist at the exposed areas and etching the electrically conductive layer on the exposed
Flächenbereichen. Surface areas.
Die Aussparungen 47 und 49 zum Erzeugen von elektrischen Verbindungen, insbesondere von Leiterbahnen sind beispielhaft bezeichnet.
The recesses 47 and 49 for generating electrical connections, in particular of printed conductors, are designated by way of example.
Claims
1 . Kontaktsystem (74, 75) umfassend wenigstens ein insbesondere elektronisches Bauelement (20, 22), wobei das Bauelement (20, 22) wenigstens einen elektrischen Anschluss (24, 26) aufweist, und das Kontaktsystem (74, 75) we- nigstens eine elektrisch leitfähige Schicht (10, 1 1 ) aufweist, wobei der Anschluss 1 . Contact system (74, 75) comprising at least one in particular electronic component (20, 22), wherein the component (20, 22) has at least one electrical connection (24, 26), and the contact system (74, 75) at least one electrically conductive layer (10, 1 1), wherein the terminal
(24, 26) des Bauelements (20, 22) und die elektrisch leitfähige Schicht (10, 1 1 ) mittels eines elektrisch leitfähigen Verbindungsmittels miteinander verbunden sind, (24, 26) of the component (20, 22) and the electrically conductive layer (10, 1 1) are interconnected by means of an electrically conductive connecting means,
dadurch gekennzeichnet, dass characterized in that
ein Teil des elektrisch leitfähigen Verbindungsmittels (50, 52, 54, 56, 57, 59) mittels eines thermischen Spritzverfahrens erzeugt ist und ein weiterer Teil (51 , 53, 55, 58, 63, 64) des elektrisch leitfähigen Verbindungsmittels mittels Galvanisieren (82, 84, 86) erzeugt ist. a part of the electrically conductive connection means (50, 52, 54, 56, 57, 59) is produced by means of a thermal spraying method, and another part (51, 53, 55, 58, 63, 64) of the electrically conductive connection means is produced by electroplating (82 , 84, 86) is generated.
2. Kontaktsystem (74, 75) Anspruch 1 , 2. contact system (74, 75) claim 1,
dadurch gekennzeichnet, dass characterized in that
mittels des thermischen Spritzverfahrens eine Basisschicht des Verbindungsmittels gebildet ist, auf die das mittels Galvanisieren erzeugte Verbindungsmittel anschließt. by means of the thermal spraying method, a base layer of the connecting means is formed, which is followed by the connecting means produced by electroplating.
3. Kontaktsystem (74, 75) Anspruch 1 oder 2, 3. contact system (74, 75) claim 1 or 2,
dadurch gekennzeichnet, dass characterized in that
der elektrische Anschluss (24, 26) des Bauelements und/oder das Bauelement, insbesondere ein Gehäuse der Bauelements, durch einen Durchbruch (40, 42, 44, 46) in der elektrisch leitfähigen Schicht (10, 1 1 ) hindurch mittels des insbesondere elektrisch leitfähigen Verbindungsmittels (50, 52, 54, 56, 57, 59) mit der elektrisch leitfähigen Schicht (10, 1 1 ) verbunden ist. the electrical connection (24, 26) of the component and / or the component, in particular a housing of the component, by an opening (40, 42, 44, 46) in the electrically conductive layer (10, 1 1) by means of the particular electrical conductive connecting means (50, 52, 54, 56, 57, 59) is connected to the electrically conductive layer (10, 1 1).
4. Kontaktsystem (74, 75) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass 4. contact system (74, 75) according to any one of the preceding claims, characterized in that
das Material des elektrischen Anschlusses (24, 26) und das Material der elektrisch leitfähigen Schicht (10, 1 1 ) zueinander verschieden sind. the material of the electrical connection (24, 26) and the material of the electrically conductive layer (10, 1 1) are different from each other.
5. Kontaktsystem (74, 75) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Bauelement (20, 22) zwischen die elektrisch leitfähige Schicht (10, 1 1 ) und eine elektrisch isolierende Schicht (30) eingeschlossen ist. 5. contact system (74, 75) according to any one of the preceding claims, characterized in that the component (20, 22) is enclosed between the electrically conductive layer (10, 11) and an electrically insulating layer (30).
6. Kontaktsystem (74, 75) nach Anspruch 5, 6. contact system (74, 75) according to claim 5,
dadurch gekennzeichnet, dass characterized in that
eine mittels des thermischen Spritzverfahrens erzeugte Schicht sich auf eine Wand des Substrates in einem Durchbruch in der elektrisch isolierenden Schicht erstreckt. a layer produced by the thermal spraying method extends on a wall of the substrate in an opening in the electrically insulating layer.
7. Kontaktsystem (74, 75) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass 7. contact system (74, 75) according to any one of the preceding claims, characterized in that
das Bauelement (20, 22) wenigstens teilweise in ein Polymer eingebettet ist.the component (20, 22) is at least partially embedded in a polymer.
8. Kontaktsystem (74, 75) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass 8. contact system (74, 75) according to one of the preceding claims, characterized in that
das elektrische Verbindungsmittel (50, 52, 54, 56, 57, 59) den elektrischen An- schluss (24, 26) unmittelbar kontaktiert. the electrical connection means (50, 52, 54, 56, 57, 59) directly contacts the electrical connection (24, 26).
9. Verfahren (70, 71 , 72, 73, 74, 75) zum elektrischen Verbinden wenigstens eines elektrischen Anschlusses (24, 26) eines insbesondere elektronischen Bauelements (20, 22) mit wenigstens einer elektrisch leitfähigen Schicht (10, 1 1 ), dadurch gekennzeichnet, dass 9. Method (70, 71, 72, 73, 74, 75) for electrically connecting at least one electrical connection (24, 26) of a particular electronic component (20, 22) to at least one electrically conductive layer (10, 11), characterized in that
der elektrische Anschluss (24, 26) mit der elektrisch leitfähigen Schicht (10, 1 1 ) mittels eines elektrisch leitfähigen Verbindungsmittels (50, 52, 54, 56, 57, 59) verbunden wird, wobei als Teil des elektrisch leitfähigen Verbindungsmittels (50, 52, 54, 56, 57, 59) eine Basisschicht mittels eines thermischen Spritzverfahrens (60, 62) erzeugt wird und auf die Basisschicht ein weiterer Teil des Verbindungsmittels (51 , 53, 55, 58, 63, 64) mittels Galvanisieren erzeugt wird. the electrical connection (24, 26) is connected to the electrically conductive layer (10, 11) by means of an electrically conductive connection means (50, 52, 54, 56, 57, 59), wherein as part of the electrically conductive connection means (50, 52, 54, 56, 57, 59) a base layer is produced by means of a thermal spraying method (60, 62) and on the base layer a further part of the connecting means (51, 53, 55, 58, 63, 64) is produced by means of electroplating.
10. Verfahren (70, 71 , 72, 73, 74, 75) nach Anspruch 7, 10. The method (70, 71, 72, 73, 74, 75) according to claim 7,
dadurch gekennzeichnet, dass characterized in that
der elektrische Anschluss (24, 26) und/oder ein Gehäuse des Bauelements (20, 22) durch einen Durchbruch (40, 41 , 42, 43, 44, 46) in der elektrisch leitfähigen Schicht (10, 1 1 ) hindurch mittels des elektrisch leitfähigen Verbindungsmittels (50, 51 , 52, 53, 54, 55, 56, 57, 58, 59, 63, 64) mit der elektrisch leitfähigen Schicht (10, 1 1 ) verbunden wird, wobei die Basisschicht (50, 52, 54, 56, 57, 59) auf dem elektrischen Anschluss (24, 26) und einer Wand des Durchbruchs (40, 41 , 42, 43, 44, 46) erzeugt wird, und der weitere Teil (51 , 53, 55, 58, 63, 64) des Verbindungsmittels auf der Basisschicht (50, 52, 54, 56, 57, 59) mittels Galvanisieren (82, 84, 86) aufgewachsen wird. the electrical connection (24, 26) and / or a housing of the component (20, 22) through an opening (40, 41, 42, 43, 44, 46) in the electrically conductive layer (10, 1 1) by means of electrically conductive connecting means (50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 63, 64) is connected to the electrically conductive layer (10, 11), the base layer (50, 52, 54, 56, 57, 59) on the electrical connection (24, 26) and a wall of the aperture (40, 41, 42, 43, 44, 46) is generated, and the further part (51, 53, 55, 58, 63, 64) of the connecting means the base layer (50, 52, 54, 56, 57, 59) is grown by electroplating (82, 84, 86).
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4532152A (en) * | 1982-03-05 | 1985-07-30 | Elarde Vito D | Fabrication of a printed circuit board with metal-filled channels |
JPH09283898A (en) * | 1996-04-09 | 1997-10-31 | Omron Corp | Mounting method of electronic parts |
DE10153482A1 (en) | 2001-10-30 | 2003-05-22 | Leoni Ag | Method for treating an electrical strip conductor on a foil wire applies a coating with thermal gun/flame spraying to a locally defined surface area on a conductor surface |
DE102004047357A1 (en) * | 2004-09-29 | 2006-04-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Electrical arrangement and method for producing an electrical arrangement |
DE102006037532A1 (en) * | 2006-08-10 | 2008-02-14 | Siemens Ag | Method for producing an electrical functional layer on a surface of a substrate |
DE102008009220A1 (en) * | 2008-02-06 | 2009-08-13 | Robert Bosch Gmbh | Method for producing a printed circuit board |
US20110266041A1 (en) * | 2002-01-31 | 2011-11-03 | Tuominen Risto | Method for embedding a component in a base |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206596A (en) * | 1992-01-27 | 1993-08-13 | Furukawa Electric Co Ltd:The | Metal base printed circuit board |
US5964395A (en) * | 1997-06-09 | 1999-10-12 | Ford Motor Company | Predeposited transient phase electronic interconnect media |
FI117814B (en) * | 2004-06-15 | 2007-02-28 | Imbera Electronics Oy | A method for manufacturing an electronic module |
-
2011
- 2011-12-27 DE DE102011089927A patent/DE102011089927A1/en not_active Withdrawn
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2012
- 2012-12-11 WO PCT/EP2012/075026 patent/WO2013098067A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4532152A (en) * | 1982-03-05 | 1985-07-30 | Elarde Vito D | Fabrication of a printed circuit board with metal-filled channels |
JPH09283898A (en) * | 1996-04-09 | 1997-10-31 | Omron Corp | Mounting method of electronic parts |
DE10153482A1 (en) | 2001-10-30 | 2003-05-22 | Leoni Ag | Method for treating an electrical strip conductor on a foil wire applies a coating with thermal gun/flame spraying to a locally defined surface area on a conductor surface |
US20110266041A1 (en) * | 2002-01-31 | 2011-11-03 | Tuominen Risto | Method for embedding a component in a base |
DE102004047357A1 (en) * | 2004-09-29 | 2006-04-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Electrical arrangement and method for producing an electrical arrangement |
DE102006037532A1 (en) * | 2006-08-10 | 2008-02-14 | Siemens Ag | Method for producing an electrical functional layer on a surface of a substrate |
DE102008009220A1 (en) * | 2008-02-06 | 2009-08-13 | Robert Bosch Gmbh | Method for producing a printed circuit board |
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