DE102004047357A1 - Electrical arrangement and method for producing an electrical arrangement - Google Patents
Electrical arrangement and method for producing an electrical arrangement Download PDFInfo
- Publication number
- DE102004047357A1 DE102004047357A1 DE102004047357A DE102004047357A DE102004047357A1 DE 102004047357 A1 DE102004047357 A1 DE 102004047357A1 DE 102004047357 A DE102004047357 A DE 102004047357A DE 102004047357 A DE102004047357 A DE 102004047357A DE 102004047357 A1 DE102004047357 A1 DE 102004047357A1
- Authority
- DE
- Germany
- Prior art keywords
- metallization
- arrangement according
- substrate
- electrical
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000001465 metallisation Methods 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000004020 conductor Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims description 27
- 238000005507 spraying Methods 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000000945 filler Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000004033 plastic Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- ONBQEOIKXPHGMB-VBSBHUPXSA-N 1-[2-[(2s,3r,4s,5r)-3,4-dihydroxy-5-(hydroxymethyl)oxolan-2-yl]oxy-4,6-dihydroxyphenyl]-3-(4-hydroxyphenyl)propan-1-one Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1OC1=CC(O)=CC(O)=C1C(=O)CCC1=CC=C(O)C=C1 ONBQEOIKXPHGMB-VBSBHUPXSA-N 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000896 Manganin Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229940126142 compound 16 Drugs 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/0012—Apparatus for achieving spraying before discharge from the apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/0075—Nozzle arrangements in gas streams
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/14—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/1606—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air
- B05B7/1613—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air comprising means for heating the atomising fluid before mixing with the material to be sprayed
- B05B7/162—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air comprising means for heating the atomising fluid before mixing with the material to be sprayed and heat being transferred from the atomising fluid to the material to be sprayed
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2405—Shape
- H01L2224/24051—Conformal with the semiconductor or solid-state device
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
- H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/24998—Reinforcing structures, e.g. ramp-like support
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Abstract
Die elektrische Anordnung umfasst ein Substrat (9) mit mindestens einem elektrischen Bauteil (40) und/oder einer Leiterbahn (11), auf dem mindestens eine Metallisierung (10) aufgebracht ist. Um bei einer solchen Anordnung eine elektrisch leitende Schicht oder einen leitenden Verbindungsbereich mit hervorragenden elektrischen und thermischen Leitungseigenschaften bei hoher thermischer und mechanischer Stabilität weitgehend belastungsfrei auf dem Substrat zu applizieren, ist mindestens eine kaltgasgespritzte Metallisierung als Leiterbahn oder als elektrische Verbindung zweier Leiter vorgesehen.The electrical arrangement comprises a substrate (9) with at least one electrical component (40) and / or a conductor track (11) on which at least one metallization (10) is applied. In order to apply in such an arrangement an electrically conductive layer or a conductive connection region with excellent electrical and thermal conductivity properties with high thermal and mechanical stability largely stress-free on the substrate, at least one cold gas-sprayed metallization is provided as a conductor or as an electrical connection of two conductors.
Description
Die Erfindung betrifft eine elektrische Anordnung mit einem Substrat mit mindestens einem elektrischen Bauteil und/oder einer Leiterbahn, auf dem mindestens eine Metallisierung aufgebracht ist.The The invention relates to an electrical arrangement with a substrate with at least one electrical component and / or a conductor track, on which at least one metallization is applied.
Die Erfindung liegt auf dem Gebiet der elektrischen und elektronischen Aufbau- und Schaltungstechnik, insbesondere der Leistungshalbleiter-Schaltungstechnik, und ist auf eine elektrische Anordnung, insbesondere zur elektrischen Kontaktierung und/oder zur Wärme ableitenden oder Wärme zuleitenden Montage elektrischer Bauteile, und auf ein Verfahren zum Herstellen einer solchen Anordnung gerichtet.The Invention is in the field of electrical and electronic Construction and circuit technology, in particular the power semiconductor circuit technology, and is on an electrical arrangement, in particular for electrical Contacting and / or to the heat dissipative or heat leading assembly of electrical components, and to a method directed to making such an arrangement.
Der Begriff "Bauteil" ist im Rahmen der vorliegenden Erfindung weit zu verstehen und umfasst allgemein Schaltungselemente wie Halbleiter (z.B. Leistungs-Transistoren und Dioden), integrierte Bauelemente (ICs), passive Bauelemente aber auch andere elektrische Elemente, wie z.B. Heizelemente, Leiter, Leiterbahnen und konstruktive Elemente – wie z.B. Anschlusskontakte und dergleichen.Of the Term "component" is in the context of wide understanding of the present invention and generally includes circuit elements such as semiconductors (e.g., power transistors and diodes) integrated Components (ICs), passive components but also other electrical Elements, such as e.g. Heating elements, conductors, conductors and constructive Elements - such as e.g. Connection contacts and the like.
Derartige Bauteile werden oft in hoher Packungs- bzw. Leistungsdichte betrieben und setzen elektrische Energie in Wärmeenergie um. Diese führt zu einer Erwärmung der Bauteile, die zu einer Funktionsbeeinträchtigung und ungünstigstenfalls zu einer Zerstörung der Bauteile führen kann. Deshalb muss für eine zuverlässige Abfuhr der betriebsgemäß entstehenden Wärme gesorgt sein. Andererseits muss das Bauteil häufig aus schaltungstechnischen Gründen elektrisch isoliert sein.such Components are often operated in high packing or power density and convert electrical energy into heat energy. This leads to a warming of the components leading to a malfunction and worst case to a destruction lead the components can. Therefore, must for a reliable one Removal of the heat produced in accordance with the operating conditions be. On the other hand, the component often has circuit technology establish be electrically isolated.
In anderen Anwendungen ist es erwünscht, von einem Bauelement, z.B. einer elektrischen Heizung, die isoliert von einem Wärme empfangenden Bauteil angeordnet ist, einen Wärmefluss mit geringem Wärmewiderstand zu dem Bauteil zu realisieren.In other applications, it is desirable a device, e.g. an electric heater isolated from a heat receiving component is arranged, a heat flow with low thermal resistance to realize the component.
Aus der US-Patentschrift 5,559,374 gehen eine elektrische Anordnung der eingangs genannten Art und ein Verfahren zu deren Herstellung hervor. Die bekannte Anordnung umfasst ein metallisches Substrat, auf dessen Oberseite durch sog. Thermosetting unter Druck und Wärme eine mehrlagige Folie auflaminiert ist. Diese besteht aus einer oberseitigen Kupferfolie und einer darunter liegenden Trägerfolie aus Kunststoff. Beim Auflaminieren der mehrlagigen Folie bildet der Kunststoff eine isolierende Schicht. In der Kupferfolie können anschließend durch Photoätzen Kupferstrukturen erzeugt werden, die Montagebereiche und Leiterbahnen bilden. Durch Reflow-Lötung sind in den Montagebereichen auf den Kupferstrukturen Dickschicht-Leiterbahnen ausgebildet, mit denen mittels des Reflow-Löt-Prozesses Kupferplättchen verlötet sind, die für einen hohen Stromfluss ausgelegt sind. Die Kupferplättchen dienen mit integralen Fortsätzen zum externen Anschluss an leistungsseitige Hochstromleitungen. Auf die Kupferplättchen sind Bauteile in Form von Leistungshalbleitern wie z.B. IGBTs aufgelötet.Out US Patent 5,559,374 is an electrical arrangement of the type mentioned and a method for their preparation out. The known arrangement comprises a metallic substrate, on its upper side by so-called. Thermosetting under pressure and heat a multilayer film is laminated. This consists of a topside copper foil and an underlying carrier sheet Plastic. When laminating the multilayer film forms the Plastic an insulating layer. In the copper foil can subsequently through photoetching Copper structures are generated, the mounting areas and tracks form. By reflow soldering thick-film tracks are formed in the mounting areas on the copper structures, with which copper platelets are soldered by means of the reflow soldering process, the for a high current flow are designed. The copper plates serve with integral extensions For external connection to power-side high-current cables. On the copper plates are components in the form of power semiconductors such. Soldered IGBTs.
Die Herstellung dieser bekannten elektrischen Anordnung ist aufwendig. Da die Leistungs-Bauteile während ihrer Schaltvorgänge hohe Leistungsspitzen und damit erhebliche in Verlustwärme umgesetzte Verlustleitungen generieren, besteht die Notwendigkeit, die thermischen Auswirkungen der Verlustleitungen abzufangen.The Production of this known electrical arrangement is complicated. Since the power components during their switching operations high power peaks and thus significant in heat loss implemented Generating loss lines, there is a need, the thermal Intercept the effects of the loss lines.
Zwar sieht die bekannte Anordnung zur Wärmeabfuhr bzw. Kühlung der Bauteile ein entsprechend dimensioniertes, metallisches Kühlelement vor, gegenüber dem die Bauteile jedoch elektrisch isoliert sein müssen. Dazu dient die genannte isolierende Kunststoff-Schicht. Diese hat jedoch einen vergleichsweise hohen Wärmewiderstand, durch den der Wärmestrom zum Substrat und damit die Wärmeabfuhr limitiert sind, und begrenzt durch ihre maximale Einsatztemperatur die zulässige Wärme- bzw. Temperatureinbringung (auch während des Herstellungsprozesses). Auch müssen etwa schaltungstechnisch erforderliche passive Bauteile – wie z.B. Widerstände oder Induktivitäten – isoliert angeordnet und ggf. gekühlt werden. Dies ist mit zusätzlichem Aufwand und mit entsprechenden Kosten verbunden.Though sees the known arrangement for heat dissipation and cooling of Components a correspondingly sized, metallic cooling element before, across from However, the components must be electrically isolated. To serves the said insulating plastic layer. However, this one has a comparatively high thermal resistance, through the heat flow to the substrate and thus the heat dissipation are limited, and limited by their maximum service temperature the permissible Warmth- or temperature input (also during the manufacturing process). Also need Circuitry required passive components - such as. Resistors or Inductors - isolated arranged and optionally cooled become. This is with additional effort and associated with corresponding costs.
Auf dem Gebiet der elektrischen Schaltungstechnik und insbesondere der Leistungshalbleiterelektronik verstärkt sich der Kostendruck kontinuierlich. Die einfache, kostengünstige und rationelle Herstellbarkeit von elektrischen Anordnungen ist deshalb ein zunehmend wichtiges Erfolgskriterium.On the field of electrical circuit technology and in particular the Power semiconductor electronics, the cost pressure increases continuously. The simple, inexpensive and rational manufacturability of electrical arrangements therefore an increasingly important success criterion.
Aufgabe der vorliegenden Erfindung ist daher eine Anordnung und ein Verfahren zu ihrer Herstellung anzugeben, die bei besonders hohen maximal zulässigen Betriebstemperaturen auch im Bereich komplizierter Substrat-Topologien einfach und kostengünstig herstellbar ist.task The present invention is therefore an arrangement and a method for their production, which at particularly high maximum permissible Operating temperatures even in the area of complicated substrate topologies easy and inexpensive can be produced.
Diese Aufgabe wird hinsichtlich der Anordnung erfindungsgemäß durch eine Anordnung mit den Merkmalen des Anspruchs 1 und hinsichtlich des Verfahrens durch ein Verfahren mit den Merkmalen des Anspruchs 22 gelöst.These Task is according to the invention in terms of the arrangement an arrangement with the features of claim 1 and in terms the method by a method having the features of the claim 22 solved.
Danach umfasst die elektrische Anordnung ein Substrat, auf dem mindestens ein elektrisches Bauteil, z.B. ein Leistungshalbleiter wie ein IGBT, und/oder eine Leiterbahn angeordnet sind/ist. Auf dem Substrat ist mindestens eine kaltgasgespritzte Metallisierung aufgebracht. Vorteilhafte Fortbildungen der Erfindung sind Gegenstand der Unteransprüche und gehen aus der nachfolgenden Beschreibung und den Ausführungsbeispielen hervor.Thereafter, the electrical arrangement comprises a substrate on which at least one electrical component, for example a power semiconductor such as an IGBT, and / or a conductor track is or is arranged. On At least one cold gas-sprayed metallization is applied to the substrate. Advantageous developments of the invention are the subject of the dependent claims and will become apparent from the following description and the embodiments.
Ein wesentlicher Aspekt der Erfindung besteht also darin, dass mittels an sich bekanntem Kaltgasspritzen eine Metallisierung zur Verschaltung und/oder Aufnahme bzw. Fixierung elektrischer oder mechanischer Bauteile dient.One An essential aspect of the invention is therefore that by means of known per se cold gas spraying a metallization for interconnection and / or Recording or fixing of electrical or mechanical components serves.
Beim Kaltgasspritzen wird der Beschichtungswerkstoff – im Unterschied zu bekannten gängigen Spritzverfahren – nicht angeschmolzen oder aufgeschmolzen. Vielmehr wird der Beschichtungswerkstoff in feiner oder feinster Pulverform – die Pulverpartikel haben eine Größe von z.B. 1 μm bis 50 μm – in einem auf einige 100 °C aufgeheizten Gasstrom auf die zu beschichtende Oberfläche beschleunigt. Die Pulverpartikel erreichen dabei Geschwindigkeiten von etwa 300 m/s bis 1200 m/s. Der Gasstrom kann bevorzugt eine anti-oxidierende Wirkung auf die Partikel haben.At the Cold gas spraying is the coating material - in contrast to known common Spraying - not melted or melted. Rather, the coating material in fine or finest powder form - the powder particles have a size of e.g. 1 μm to 50 μm - in one to some 100 ° C heated gas stream accelerated to the surface to be coated. The Powder particles reach speeds of about 300 m / s up to 1200 m / s. The gas stream may preferably be an anti-oxidizing Have an effect on the particles.
Durch ihre dadurch vergleichsweise hohe kinetische Energie verformen sich die Partikel beim Aufprall auf das Substrat und bilden darauf eine dichte und fest haftende Schicht. Durch die hohe kinetische Energie werden vorteilhafterweise auch etwaige auf dem Substrat gebildete Oberflächenoxide aufgebrochen und durch Mikroreibung zwischen den Partikeln eine solche Temperaturerhöhung bewirkt, dass an den Berührungsflächen Mikroverschweißungen entstehen.By Their relatively high kinetic energy deforms the particles upon impact with the substrate and form one on it dense and firmly adhering layer. Due to the high kinetic energy are advantageously also any formed on the substrate surface oxides broken up and by micro-friction between the particles such temperature increase causes microwelding at the contact surfaces.
Dadurch erreicht man äußerst reine Metallisierungen, die in ihren elektrischen und thermischen Eigenschaften herkömmlich hergestellten – z.B. gewalzten – Materialien nicht nachstehen.Thereby you reach extremely pure Metallizations in their electrical and thermal properties conventional manufactured - e.g. rolled - materials not inferior.
Im Vergleich zu herkömmlichen Lotverbindungen zeigt sich die erfindungsgemäße Anordnung in ihren elektrischen, thermischen und mechanischen Eigenschaften überlegen: So zeigen Lotverbindungen schon bei einer Erwärmung über ca. 115 °C eine signifikante Änderung ihrer mechanischen Eigenschaften – die erfindungsgemäße Anordnung ist dagegen in diesen Temperaturbereichen mechanisch noch hoch stabil.in the Compared to conventional Lotverbindungen shows the inventive arrangement in their electrical, superior to thermal and mechanical properties: this is how solder joints are made already at a warming over approx. 115 ° C a significant change their mechanical properties - the arrangement of the invention on the other hand is mechanically still highly stable in these temperature ranges.
Ein bei der erfindungsgemäßen Anordnung besonders vorteilhafter Aspekt ist, dass mittels Kaltgasspritzen nicht nur dünne, sondern auch vergleichsweise größere Schichtdicken oder Strukturen realisierbar sind. Dickere Strukturen sind hinsichtlich der Wärmeleitung und der Minimierung des elektrischen Leitungswiderstandes vorteilhaft.One especially in the inventive arrangement advantageous aspect is that by means of cold gas spraying not only thin, but also comparatively larger layer thicknesses or structures are feasible. Thicker structures are regarding the heat conduction and minimizing electrical line resistance.
Damit lassen sich auch Anordnungen realisieren, die sich durch eine besonders homogene, belastbare und auch an Bereichen mit komplexen Geometrien zuverlässige Metallisierung auszeichnen.In order to can also implement arrangements that are characterized by a particularly homogeneous, resilient and also in areas with complex geometries reliable Distinguish metallization.
Ein weiterer wesentlicher Aspekt der Erfindung besteht darin, dass eine Vielzahl von Ausgangsmaterialien verwendbar ist, die z.B. einen vergleichsweise geringen Wärmewiderstand haben und damit einen effektiven Wärmefluss z.B. von Bauteilen zu dem Substrat (Wärmeabfuhr) oder aber von einer Heizeinrich tung zu einem zu erwärmenden Bauteil (Wärmezufuhr) auf dem Substrat ermöglichen.One Another essential aspect of the invention is that a Variety of starting materials, e.g. one comparatively low thermal resistance have and thus an effective heat flow, e.g. of components too the substrate (heat dissipation) or from a Heizeinrich device to be heated Component (heat supply) allow on the substrate.
Durch die Wahl des kaltzuspritzenden Ausgangsmaterials können also unmittelbar die Eigenschaften der Metallisierung beeinflusst werden. So ermöglicht z.B. die Wahl von Kupfer, Silber oder Gold als Ausgangsmaterial die Realisierung äußerst niederohmiger, gut Wärme leitender Metallisierungen. Solche niederohmigen Metallisierungen sind insbesondere im Hochstrombereich bei niedrigen Betriebsspannungen – wie z.B. in der Kraftfahrzeugtechnik – vorteilhaft.By the choice of the cold-sprayed starting material can therefore directly affect the properties of the metallization. So allows e.g. the choice of copper, silver or gold as starting material the realization of extremely low impedance, good heat conductive metallizations. Such low-resistance metallizations are especially in the high current range at low operating voltages - such. in automotive engineering - advantageous.
Die Metallisierung kann bevorzugt auch selbst eine Leiterbahn bilden. Nach einer weiteren bevorzugten Ausgestaltung der Erfindung der Erfindung bildet diese Leiterbahn eine Fläche, die zur elektromagnetischen Abschirmung gegen EMV-Störungen dient.The Metallization can preferably also form a conductor track itself. According to another preferred embodiment of the invention Invention, this trace forms an area that is electromagnetic Shielding against EMC interference serves.
Die Metallisierung kann zur Ausbildung von elektrischen Widerständen bevorzugt aus einem Widerstandsmaterial wie z.B. Konstantan oder Manginan bestehen. Die so gebildeten Widerstandsbereiche sind kostengünstig und einfach realisierbar und zeichnen sich aufgrund ihrer Nähe zum Substrat durch eine gute thermische Anbindung an das Substrat aus. Die Widerstandswerte können durch entsprechende Gestaltung der Schichtdicke und/oder Schichtgeometrie zusätzlich an die jeweiligen Erfordernisse angepasst werden.The Metallization may be preferred for the formation of electrical resistances made of a resistance material such as Konstantan or Manginan consist. The resistance regions thus formed are inexpensive and easy to implement and characterized by their proximity to the substrate a good thermal connection to the substrate. The resistance values can by appropriate design of the layer thickness and / or layer geometry additionally adapted to the respective requirements.
Das unter der Bezeichnung Konstantan bekannte Material ist üblicherweise eine Legierung aus 55% Kupfer und 45% Nickel, die sich durch einen in einem weiten Temperaturbereich konstanten elektrischen Widerstand auszeichnet. Eine Legierung (86% Kupfer/12% Mangan/2% Nickel) mit einem ähnlich geringen Temperaturkoeffizienten ist unter der Bezeichnung Manganin handelsüblich.The material known by the name of Konstantan is common an alloy of 55% copper and 45% nickel that passes through a in a wide temperature range constant electrical resistance distinguished. An alloy (86% copper / 12% manganese / 2% nickel) with a similar low temperature coefficient is commercially available under the name Manganin.
Die Metallisierung kann bevorzugt auch ein Ventilmetall oder eine Ventilmetalllegierung sein, das bzw. die bevorzugt zumindest teilweise anodisch oxidiert ist.The Metallization may also preferably be a valve metal or a valve metal alloy which preferably oxidizes anodically at least partially is.
Dies ist hinsichtlich der Isolations-Eigenschaften von Vorteil. Unter Ventilmetallen sind allgemein Metalle zu verstehen, die sich bei anodischer Polung mit einer Oxidschicht überziehen, die auch bei hohen Spannungen nicht leitend wird (durchschlägt). Somit können – insbesondere für einen Mehrschichtaufbau – gezielt Isolationsschichten auf einer zuvor kaltgespritzen Metallisierung erzeugt werden. Als Ventilmetall werden bevorzugt Aluminium, Magnesium, Titan, Zirkonium oder Tantal und als Ventilmetalllegierung AlCu, AlCuMg, AlMg, AlZnMg, AlZnMgCu, AlSiCu, AlMgSi, AlSi, AlMn oder AlMgMn verwendet.This is advantageous in terms of the insulation properties. Valve metals are generally metals which are anodic Cover the polarity with an oxide layer that does not become conductive even at high voltages. Thus, in particular for a multi-layer structure, insulation layers can be selectively produced on a previously cold-sprayed metallization. The valve metal used is preferably aluminum, magnesium, titanium, zirconium or tantalum and as the valve metal alloy AlCu, AlCuMg, AlMg, AlZnMg, AlZnMgCu, AlSiCu, AlMgSi, AlSi, AlMn or AlMgMn.
Die Metallisierung kann auf einen elektrischen Isolator, wie z.B. ein keramisches Substrat gespritzt sein. Bevorzugt wird ein Substrat verwendet, das aus einem vergleichsweise weichen Grundkörper bzw. Grundmaterial (z.B. Kunststoff) besteht, in das harte Füllstoffe oder Füllkörper (z.B. Keramikpulver) eingebracht sind. Das weiche Grundmaterial wird während des Kaltgasspritzens zumindest teilweise abgetragen, so dass die eigentliche Beschichtung in einem stärkeren Maße mit den harten Füllstoffen in Verbindung gelangt. Dadurch ist eine besonders feste und harte Beschichtung realisierbar.The Metallization may be applied to an electrical insulator, such as one be sprayed ceramic substrate. A substrate is preferred used, which consists of a relatively soft body or Base material (e.g., plastic) is made into the hard fillers or packing (e.g. Ceramic powder) are introduced. The soft base material is during the Cold gas spraying at least partially removed, so that the actual Coating in a stronger one Dimensions with the hard fillers get in touch. This is a particularly solid and hard Coating feasible.
Um bei Verwendung eines leitenden Substrats bedarfsweise eine zuverlässige Isolation zum Substrat zu gewährleisten, ist nach einer vorteilhaften Ausgestaltung der Erfindung zwischen Substratoberfläche und Metallisierung eine isolierende Schicht vorgesehen.Around when using a conductive substrate, if necessary, a reliable insulation to ensure the substrate is according to an advantageous embodiment of the invention between the substrate surface and Metallization provided an insulating layer.
Besonders bevorzugt kann in diesem Zusammenhang Aluminium auf einer Keramik (z.B. SiC oder Al2O3) aufgebracht und zur Bildung einer Isolationsschicht – bevorzugt durch Plasma Elektrolytische Oxidation (PEO) – oxidiert werden. Auf dieser Isolationsschicht kann dann eine Metallisierung aufgespritzt werden, auf der wiederum z.B. ein elektrisches Bauteil montiert und kontaktiert werden kann. Alternativ kann auch diese Metallisierung zur Bildung einer Isolationsschicht oxidiert werden. Auf diese Weise ist ein mehrschichtiger Aufbau – auch unter Verwendung verschiedener Materialien – möglich, um thermisch induzierte Spannungen besser auszugleichen und ein verbessertes mechanisches Verhalten zu erreichen.Especially In this context, preference may be given to aluminum on a ceramic (e.g., SiC or Al 2 O 3) and preferred for forming an insulating layer be oxidized by plasma electrolytic oxidation (PEO). On this isolation layer then a metallization can be sprayed on the turn e.g. an electrical component can be mounted and contacted. alternative can also this metallization to form an insulating layer be oxidized. In this way is a multi-layered construction - also using different materials - possible to better balance thermally induced stresses and improved to achieve mechanical behavior.
Hier spielt die Erfindung einen ihrer besonderen Vorteile aus, nämlich die vergleichsweise geringe thermische Belastung des Substrats. Da die Metallisierung mit nur sehr geringer Wärmeeinbringung verbunden ist, ergeben sich kaum thermisch induzierte mechanische Spannungen und damit keine Durchbiegungen oder Verformungen des Substrats (wie z.B. bei der herkömmlichen DCB(Direct Copper Bonding)-Technologie). Deshalb können erfindungsgemäß auch Anordnungen mit vergleichsweise großen Oberflächen metallisiert werden, was in traditioneller Technik einen wesentlich größeren Aufwand erfordert. Eine weitere Reduzierung von thermischen Belastungen lässt sich erreichen, indem mechanische Puffer – z.B. Molybdän – im Kaltgasspritzverfahren als Zwischenschicht aufgebracht werden.Here The invention plays one of its particular advantages, namely the comparatively low thermal load of the substrate. Because the Metallization is associated with very little heat input, hardly arise thermally induced mechanical stresses and so that no deflections or deformations of the substrate (such as e.g. in the conventional DCB (Direct Copper Bonding) technology). Therefore, according to the invention also arrangements metallized with comparatively large surfaces become, which in traditional technology a much larger effort requires. A further reduction of thermal loads let yourself achieve by using mechanical buffers - e.g. Molybdenum - in the cold gas spraying process as Intermediate layer can be applied.
Bevorzugt kann die Metallisierung mindestens eine Ausnehmung oder geometrische Vertiefung – kurz als ein Senkloch bezeich net – ausfüllen. Damit ist die mechanische Verbindung zwischen Substrat und Metallisierung verbessert, bedarfsweise auch eine Kontaktierung z.B. tieferer Substratbereiche oder eine Verbindung eines elektrisch isoliert auf dem Substrat angeordneten Bauteils mit dem Substrat möglich und die Wärmeleitung in das bzw. aus dem Volumen des Substrats verbessert.Prefers the metallization may be at least one recess or geometric Deepening - short as a sinkhole called - fill. This is the mechanical connection between substrate and metallization improves, if necessary, also a contacting e.g. deeper substrate areas or a compound of an electrically isolated arranged on the substrate Component with the substrate possible and the heat conduction improved in and out of the volume of the substrate.
Von der Metallisierung kann bzw. können als integrale Bestandteile auch ein oder mehrere Anschlusskontakte gebildet sein. Dies kann fertigungstechnisch bevorzugt dadurch realisiert sein, dass mittels einer während des Kaltgasspritzprozesses aufgebrachten Maske z.B. ein hoch stehender Stift oder Kontaktfortsatz ausgebildet wird.From the metallization can or can as integral components also one or more connection contacts be formed. This can preferably be achieved by manufacturing technology be that by means of a while of the cold gas spraying process applied mask e.g. a high standing one Pen or contact extension is formed.
Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist der Metallisierung ein Zusatzmaterial, beispielsweise Silizium, Keramik und/oder Kohlenstoff, beigefügt. Damit können vorteilhafterweise Parameter – wie z.B. die Härte, die Leitfähigkeit oder der thermische Ausdehnungskoeffizient – der Metallisierung je nach Anwendungsfall und Bedarf eingestellt werden.To a further advantageous embodiment of the invention is the Metallization a supplemental material, such as silicon, ceramic and / or carbon. With that you can advantageously parameters - such as e.g. the hardness, the conductivity or the thermal expansion coefficient - the metallization depending on Use case and need to be set.
Ein weiterer wesentlicher Vorteil der Erfindung besteht – wie eingangs schon erwähnt – darin, dass mit geringem Aufwand und geringer thermischer Belastung des Substrats bzw. der darauf ausgebildeten Strukturen auch vergleichsweise dicke oder massive Metallisierungen erzeugt werden können.One Another important advantage of the invention is - as in the beginning already mentioned - in that with little effort and low thermal stress of the substrate or the structures formed thereon also comparatively thick or massive metallizations can be generated.
Vor diesem Hintergrund ist eine Ausgestaltung der Erfindung bevorzugt, bei der die Metallisierung eine elektrische Verbindung zwischen zwei Leitern bildet, von denen zumindest ein Leiter auf dem Substrat angeordnet ist. Die Metallisierung stellt dabei eine material- und ggf. formschlüssige Verbin dung her. Diese Verbindung hat auch den Vorteil, dass sie einen sehr großen Anwendungsbereich hat, äußerst niederohmig, gut Wärme leitend und dennoch thermisch sowie mechanisch sehr stabil ist. Sie ist deshalb auch für Anwendungsfälle mit sehr hohen elektrischen Strömen bestens geeignet.In front In this background, an embodiment of the invention is preferred, in which the metallization is an electrical connection between forms two conductors, of which at least one conductor on the substrate is arranged. The metallization represents a material and possibly positive locking Connection. This compound also has the advantage of being a very big one Scope has, extremely low impedance, good heat conductive and yet thermally and mechanically very stable. It is therefore also for use cases with very high electrical currents best for.
Bevorzugt kann einer der Leiter als Anschlusskontakt, z.B. als Anschlussstift oder Öse, ausgestaltet sein. Um äußere mechanische Belastungen sich nicht auf die Metallisierung bzw. die Verbindung auswirken zu lassen, ist bevorzugt vorgesehen, dass der Anschlusskontakt mechanisch von einem Gehäuse gestützt ist.Prefers For example, one of the conductors may be used as a terminal, e.g. as a pin or eyelet, designed be. To external mechanical Do not burden the metallization or the connection It is preferably provided that the connection contact mechanically from a housing supported is.
Eine fertigungstechnisch vorteilhafte erfindungsgemäße Anordnung, die für eine besonders kompakte und geschützte Anordnung eines Bauteils auf einem Substrat bevorzugt ist, sieht vor, dass auf dem Substrat eine Basis-Metallisierung aufgebracht ist. Auf dieser ist mindestens ein elektrisches Bauteil angeordnet und das Bauteil ist zumindest teilweise von einer Verschaltungsplatine umgeben. Die Metallisierung realisiert dabei eine elektrische Verbindung zwischen Bauteil und Verschaltungsplatine. Besonders bevorzugt kann das Bauteil in einer Ausnehmung der Verschaltungsplatine platziert und das Bauteil von einer Isolierung umgeben sein.A manufacturing technology advantageous arrangement according to the invention, which is particularly compact and protected Arrangement of a component on a substrate is preferred sees that a base metallization is applied to the substrate. On this at least one electrical component is arranged and the component is at least partially of a wiring board surround. The metallization realizes an electrical connection between Component and interconnection board. Particularly preferably, the component placed in a recess of the circuit board and the component be surrounded by an insulation.
Die Isolierung kann von einem abdichtenden und isolierenden Material, z.B. einem Kunststoff oder Harz, gebildet sein. Bevorzugt kann die Isolierung das Bauteil ringartig umgeben, so dass eine obere Öffnung oder Ausnehmung besteht, durch die die Metallisierung appliziert werden kann, um das Bauteil in gewünschter Weise zu kontaktieren.The Insulation may consist of a sealing and insulating material, e.g. a plastic or resin, be formed. Preferably, the Insulation surrounding the component ring-like, so that an upper opening or Recess exists through which the metallization are applied can to the component in the desired Way to contact.
Die erfindungsgemäße Anordnung kann auch dadurch ausgestaltet werden, dass die kaltgespritzte Metallisierung mehrere Leiterbahnen auf verschiedenen räumlichen Ebenen verbindet. Nach einer diesbezüglich bevorzugten Weiterbildung der Erfindung ist vorgesehen, dass die Metallisierung einen auf dem Substrat angeordneten elektrischen Leiter in einer ersten Ebene mit einem elektrischen Leiter verbindet, der in einer zweiten Ebene auf dem Substrat angeordnet ist.The inventive arrangement can also be configured by the cold sprayed metallization connects multiple tracks on different spatial levels. After one in this regard preferred embodiment of the invention is provided that the Metallization an arranged on the substrate electrical Connecting conductor in a first level to an electrical conductor, which is arranged in a second plane on the substrate.
Die Erfindung betrifft außerdem ein Verfahren zum Herstellen einer elektrischen Anordnung mit dem Ziel, eine elektrisch leitende Schicht oder einen leitenden Verbindungsbereich mit hervorragenden elektrischen und thermischen Leitungseigenschaften bei hoher thermischer und mechanischer Stabilität weitgehend belastungsfrei auf einem Substrat zu applizieren.The Invention also relates a method for producing an electrical arrangement with the Target, an electrically conductive layer or a conductive connection area with excellent electrical and thermal conduction properties high thermal and mechanical stability largely stress-free to apply on a substrate.
Diese Aufgabe wird erfindungsgemäß gelöst, indem auf einem Substrat ein Bauteil und/oder eine Leiterbahn angeordnet wird/werden und durch Kaltgasspritzen eine Metallisierung aufgebracht wird, die das Bauteil und/oder die Leiterbahn elektrisch kontaktiert.These The object is achieved according to the invention by arranged on a substrate, a component and / or a conductor track is / are and applied by cold gas spraying a metallization is contacted, which electrically contacts the component and / or the conductor track.
Bevorzugt wird dabei das Substrat während des Kaltgasspritzens maskiert; so lassen sich besonders gut dosiert gezielt Metallisierungen an gewünschten Substratbereichen aufbringen.Prefers while doing the substrate during the Cold gas spraying masked; this makes it particularly easy to dose targeted metallizations to desired Apply substrate areas.
Zur fertigungstechnisch einfachen Herstellung von integral ausgeformten, kompakt angeordneten Anschlusskontakten sieht eine vorteilhafte Fortbildung des erfindungsgemäßen Verfahrens vor, dass das Substrat mit seiner Oberseite in Bezug auf eine Stützebene eines Trägers fluchtend ausgerichtet wird, mindestens ein elektrischer Anschlusskontakt durch Kaltgasspritzen einer Metallisierung ausgebildet wird, wobei der An schlusskontakt sich mindestens teilweise auf der Stützebene erstreckt, und der Träger nach Fertigstellung des Anschlusskontakts entfernt wird.to production-technically simple production of integrally formed, compactly arranged connection contacts provides an advantageous Training of the method according to the invention prior to that, the substrate with its top in relation to a support plane a carrier is aligned, at least one electrical connection contact is formed by cold gas spraying a metallization, wherein the con nection contact at least partially on the support plane extends, and the carrier is removed after completion of the connection.
Ausführungsbeispiele der Erfindung werden nachfolgend anhand einer Zeichnung näher erläutert. Dabei sind gleiche oder entsprechende Elemente mit gleichen Bezugszeichen bezeichnet. Es zeigen (überwiegend im Längsschnitt):embodiments The invention will be explained in more detail with reference to a drawing. there are the same or corresponding elements with the same reference numerals designated. It show (mainly in longitudinal section):
Nach
Die
vergleichsweise hohe kinetische Energie verformt die Partikel bei
ihrem Aufprall auf die Oberseite
Die
Metallisierung
Bei
Wahl eines Widerstandsmaterials
Besonders bevorzugt kann in diesem Zusammenhang Aluminium auf einer Keramik (z.B. SiC oder Al2O3) aufgebracht und zur Bildung einer Isolationsschicht – bevorzugt durch Plasma Elektrolytische Oxidation (PEO) – oxidiert werden. Auf dieser Isolationsschicht kann dann eine Metallisierung aufgespritzt werden, auf der wiederum z.B. ein elektrisches Bauteil montiert und kontaktiert werden kann. Alternativ kann auch diese Metallisierung zur Bildung einer Isolationsschicht oxidiert werden. Auf diese Weise ist ein mehrschichtiger Aufbau möglich.Especially In this context, preference may be given to aluminum on a ceramic (e.g., SiC or Al 2 O 3) and preferred for forming an insulating layer be oxidized by plasma electrolytic oxidation (PEO). On this isolation layer then a metallization can be sprayed on the turn e.g. an electrical component can be mounted and contacted. alternative can also this metallization to form an insulating layer be oxidized. In this way is a multi-layered structure possible.
Die
Metallisierung
Selbstverständlich können auch mehrere Maskenöffnungen gleichzeitig bestrahlt werden.Of course you can too several mask openings be irradiated simultaneously.
Auf diese Art kann beispielsweise ein Substrat für die Über-Kopf-Montage (Flip-Chip) eines Bauteils realisiert werden.On This type can, for example, a substrate for the overhead mounting (flip-chip) of a component will be realized.
Die Leiterbahnen können dabei auch zur externen Kontaktierung des Bauteils dienen.The Tracks can thereby also serve for external contacting of the component.
- 11
- Fördergastransport gas
- 22
- EinrichtungFacility
- 33
- Heizelementheating element
- 44
- Pulverzufuhrpowder feed
- 55
- Ausgangsmaterial (Beschichtungswerkstoff)starting material (Coating material)
- 66
- Kupferpartikelcopper particles
- 77
- Düsejet
- 88th
- Oberseitetop
- 99
- Substratsubstratum
- 9a9a
- Senklochsink hole
- 1010
- Metallisierungmetallization
- 1111
- Leiterbahnconductor path
- 11a11a
- Widerstandsmaterialresistance material
- 1212
- Richtungdirection
- 1414
- Leiterbahnconductor path
- 1515
- Leiterbahnconductor path
- 1616
- Verbindungconnection
- 1818
- Leiterladder
- 1919
- Anschlusskontaktconnection contact
- 2020
- Leiterladder
- 2121
- Metallisierungmetallization
- 2222
- Gehäusecasing
- 2323
- Metallisierungmetallization
- 2525
- elektrischer Leiterelectrical ladder
- 2626
- Bauteilcomponent
- 2727
- Isolatorinsulator
- 2828
- Öffnungopening
- 2929
- Leiterbahnconductor path
- 3030
- Metallisierungmetallization
- 3131
- Leistungshalbleiter (Bauteil)Power semiconductor (Part)
- 3232
- Isolatorinsulator
- 3333
- Schaltungsplatinecircuit board
- 3434
- Ausnehmungrecess
- 3535
- Oberseitetop
- 3636
- Leiterbahnenconductor tracks
- 3737
- Metallisierungmetallization
- 3838
- Kühlelementcooling element
- 4040
- Bauteilcomponent
- 4141
- Leiterbahnconductor path
- 4242
- Leiterbahnconductor path
- 4343
- Verbindungselementefasteners
- 4545
- Isolierunginsulation
- 4646
- Metallisierungmetallization
- 4747
- BauteiloberseiteComponent top
- 5050
- Metallisierungmetallization
- 5151
- Oberflächesurface
- 5353
- Substratsubstratum
- 5454
- Oberflächesurface
- 5555
- weiteres Substratadditional substratum
- 6060
- erste Ebenefirst level
- 6161
- Leiterbahnconductor path
- 6262
- zweite Ebenesecond level
- 6363
- Leiterbahnconductor path
- 6565
- Metallisierungmetallization
- 6666
- Ausnehmungrecess
- 6767
- Maskemask
- 6868
- Öffnungopening
- 6969
- Öffnungopening
- 7070
- Materialrestematerial residues
- 7171
- Stützebenesupport plane
- 7272
- Trägercarrier
- 7474
- Anschlusskontaktconnection contact
- 7575
- Anschlusskontaktconnection contact
- 7676
- Anschlusskontaktconnection contact
- 7777
- Anschlusskontaktconnection contact
- 7878
- Metallisierungenmetallization
- 8181
- Anschlussflächeterminal area
- 8282
- Anschlussflächeterminal area
- 8383
- Anschlussflächeterminal area
- 8484
- Anschlussflächeterminal area
- 9090
- Substratsubstratum
- 9191
- Basismaterialbase material
- 9292
- Füllpartikelfiller particles
- 9393
- Substratoberflächesubstrate surface
- 9595
- Metallisierungmetallization
Claims (24)
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DE102004047357A DE102004047357A1 (en) | 2004-09-29 | 2004-09-29 | Electrical arrangement and method for producing an electrical arrangement |
PCT/EP2005/009406 WO2006034767A1 (en) | 2004-09-29 | 2005-09-01 | Electrical assembly and method for the production of an electrical assembly |
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DE102004047357A DE102004047357A1 (en) | 2004-09-29 | 2004-09-29 | Electrical arrangement and method for producing an electrical arrangement |
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DE102004047357A1 true DE102004047357A1 (en) | 2006-04-06 |
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WO (1) | WO2006034767A1 (en) |
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DE102006027085B3 (en) * | 2006-06-10 | 2008-01-03 | WKW Erbslöh Automotive GmbH | Procedure for connecting components from same/different materials, comprises bringing recess into the component, injecting finely-grained powdered weld filler into highly accelerated cold gas jet and filling the recess with the weld filler |
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DE102007050405B4 (en) * | 2007-10-22 | 2010-09-09 | Continental Automotive Gmbh | Electrical power component, in particular power semiconductor module, with a cooling device and method for surface and heat-conducting bonding of a cooling device to an electrical power component |
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WO2009106114A3 (en) * | 2008-02-26 | 2009-11-05 | Maschinenfabrik Reinhausen Gmbh | Method for producing printed circuit boards comprising fitted components |
DE102011017521A1 (en) * | 2011-04-26 | 2012-10-31 | Robert Bosch Gmbh | Electrical arrangement with coating and gear arrangement with such an arrangement |
DE102011076773A1 (en) * | 2011-05-31 | 2012-12-06 | Continental Automotive Gmbh | Method for manufacturing integrated circuit e.g. MOSFET, involves attaching strip conductors of power section to strip conductor attachments by cold gas spraying process, and equipping power component space with power components |
DE102012110188B4 (en) | 2011-10-27 | 2019-07-18 | Infineon Technologies Ag | Electronic device |
US9406646B2 (en) | 2011-10-27 | 2016-08-02 | Infineon Technologies Ag | Electronic device and method for fabricating an electronic device |
WO2013098067A1 (en) * | 2011-12-27 | 2013-07-04 | Robert Bosch Gmbh | Contact system with a connecting means and method |
DE102011089927A1 (en) * | 2011-12-27 | 2013-06-27 | Robert Bosch Gmbh | Contact system with a connection means and method |
US11306398B2 (en) | 2016-11-18 | 2022-04-19 | Yazaki Corporation | Method of forming circuit body and circuit body |
DE102017003977A1 (en) | 2017-04-25 | 2018-10-25 | e.solutions GmbH | Housing component for an electronic device, method for manufacturing the housing component and electronic device with the housing component |
WO2019030254A1 (en) * | 2017-08-10 | 2019-02-14 | Siemens Aktiengesellschaft | Method for producing a power module |
DE102017213930A1 (en) * | 2017-08-10 | 2019-02-14 | Siemens Aktiengesellschaft | Method for producing a power module |
DE102018208925A1 (en) * | 2018-06-06 | 2019-12-12 | Bayerische Motoren Werke Aktiengesellschaft | Method of shielding components |
US11596089B2 (en) | 2018-06-06 | 2023-02-28 | Bayerische Motoren Werke Aktiengesellschaft | Method for shielding components |
EP3613872A1 (en) * | 2018-08-21 | 2020-02-26 | Siemens Aktiengesellschaft | Method for producing a component for an electric or electronic component and component |
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