EP2673801A1 - Système de contact muni d'un moyen de connexion et procédé associé - Google Patents

Système de contact muni d'un moyen de connexion et procédé associé

Info

Publication number
EP2673801A1
EP2673801A1 EP12703998.0A EP12703998A EP2673801A1 EP 2673801 A1 EP2673801 A1 EP 2673801A1 EP 12703998 A EP12703998 A EP 12703998A EP 2673801 A1 EP2673801 A1 EP 2673801A1
Authority
EP
European Patent Office
Prior art keywords
electrically
component
conductive layer
thermally conductive
electrical connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12703998.0A
Other languages
German (de)
English (en)
Inventor
Ulrich Schaaf
Andreas Kugler
Ruben Wahl
Metin Koyuncu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2673801A1 publication Critical patent/EP2673801A1/fr
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
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    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/821Forming a build-up interconnect
    • H01L2224/82101Forming a build-up interconnect by additive methods, e.g. direct writing
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83007Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83136Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/9202Forming additional connectors after the connecting process
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92142Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92144Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09118Moulded substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques

Definitions

  • the invention relates to a contact system.
  • the contact system comprises at least one in particular electronic component.
  • the component has at least one electrical connection and / or a housing, in particular an electrically insulated housing.
  • the contact system has at least one electrical and / or thermally conductive layer.
  • the connection of the component and / or the component, in particular the housing of the component, and the electrically and / or thermally conductive layer are connected to each other by means of an electrically and / or thermally conductive connecting means.
  • the electrical and / or thermally conductive connecting means is produced by means of a thermal spraying method.
  • the connecting means may advantageously be formed of a material which differs from a conventional solder or a galvanic connecting means, for example a wrap connection.
  • the connecting means may be formed of a homogeneous material.
  • an oxide layer can be removed in particular from the electrical connection and / or the electrically conductive layer by means of the thermal spraying method during the connection, so that an application of a conventional flux or etching process for electrical connection is not necessary for electrical connection.
  • APS Atmospheric Plasma Spray
  • HVOF HVOF high-velocity oxy-fuel
  • HVFSF High Velocity Spray Spraying
  • the connecting means is preferably an electrically conductive metal or an electrically conductive alloy of mutually different metals. In essence, such metals and alloys are also thermally conductive.
  • An exemplary metal is copper or aluminum.
  • the connecting means preferably comprises copper. In another embodiment, the connecting means comprises aluminum.
  • the electrical connection and / or the component, in particular a housing of the component is connected to the electrically conductive layer through an opening in the electrically conductive layer by means of the in particular electrically conductive connection means.
  • an electrical connection to the electrically conductive layer can be connected through a narrow gap or a small hole, whereas, for example, an electric solder can not penetrate in a soldering wave bath.
  • An exemplary diameter for a breakthrough is between 10 and 50 microns, preferably between 20 and 40 microns, preferably between 20 and 30 microns.
  • the connecting means is preferably formed thermally conductive and connects the device with the electrically conductive layer thermally conductive.
  • the electrically conductive layer-for example copper- is preferably designed to conduct heat, so that the heat from the device can be dissipated into the layer via the connecting means.
  • the heat may be released from the layer to an environment or to another component, such as a heat sink. It is also conceivable that this further component forms the heat-conducting layer itself, so that the component is contacted directly thermally with the component.
  • Component is connected to the electrically conductive layer, in a contact system, the device can be connected by means of the means of thermal spraying connecting means with the thermally conductive or additionally electrically conductive layer.
  • connection of the device preferably an electrically insulating part of the device, e.g. the housing and / or a part of the component which does not form an electrical connection with the layer preferably takes place by means of the connection means through an opening in the layer.
  • the electrical connection in particular the electrically conductive connection means, can thus be formed by a layer which, starting from the electrical connection, passes through the aperture to the electrically conductive layer.
  • heat from the component or housing can advantageously be conducted via the connecting means into the electrically and / or thermally conductive layer.
  • the connecting means for example, a metal - be advantageous thermally conductive or electrically conductive and thermally conductive.
  • a thermally conductive connecting means which is designed to be electrically insulating, for example silicon dioxide or aluminum oxide, in particular ceramic.
  • the electrical connection means can be saved.
  • the material of the electrical connection and the material of the electrically conductive layer are different from one another.
  • the electrically conductive connection for connection to the electrically conductive layer by means of the thermal spraying method advantageously does not need any separate means of electroplating, for example
  • an electrical connection means enters into an intimate connection with both the electrical connection and with the electrically conductive layer.
  • both an oxide layer on the terminal and on the electrically conductive layer can be removed during the production of the electrical connection means, as well as mutually different materials are interconnected, wherein the electrical connection means with both the electrical connection, for example Aluminum, as well as with the electrically conductive layer, such as copper, enters into an intimate connection.
  • Exemplary combinations of materials are copper or aluminum, in particular an aluminum alloy for the electrically conductive layer, and tin, copper, gold or silver for the material of the electrical connection.
  • the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer.
  • the electrically insulating layer is preferably a fiber-reinforced carrier layer, in particular a glass-fiber-reinforced epoxy resin layer.
  • the electrically insulating layer is formed by a plastic film, in particular a polypropylene, polyethylene or another film.
  • the component is at least partially enclosed in a polymer, in particular melted down by means of a molding process.
  • the polymer is, for example, a polyacrylate, polypropylene, polyamide, epoxy resin or a comparable plastic.
  • the polymer can advantageously be formed a support layer for mechanical loading of the contact system.
  • the contact system Preferably, preferably as part of a circuit arrangement, by means of the polymer in a housing block - in particular protected from external influences - be included.
  • the electrically conductive connecting means contacts the electrical connection directly.
  • the electrical connection advantageously does not need to be coated with a connection layer, for example by means of a galvanic process, in order to be connected to the electrically conductive layer, for example by means of soldering.
  • a connection process for electrically connecting the electrical connection to the electrically conductive layer thus advantageously requires no use of an additional bridge material between the electrical connection and the connection means. Further advantageously, no etching or galvanizing for producing a bridge layer of the bridge material, which is designed to electrically connect a material of the electrically conductive terminal of the component with another material, namely the material of the electrically conductive layer.
  • the invention also relates to a method for electrically connecting at least one electrical connection of a particular electronic component and / or such a component, in particular an electrically insulated housing or shell of the component, with at least one electrical and / or thermally conductive layer.
  • the electrical and / or thermally conductive layer is, for example, a layer for forming at least one conductor track of the contact system.
  • a thermally conductive layer has at least one planar region for the at least indirect delivery of the heat to the adjacent environment, in particular the ambient atmosphere or a heat sink.
  • the thermally conductive layer may also be provided as a component adjacent to the component, in particular as a heat sink.
  • the contact system is, for example, a single-layer or multi-layer printed circuit board, preferably as part of a circuit arrangement.
  • the electrical connection and / or the component in particular the electrically insulated housing or shell of the component, is preferably connected to the electrical and / or heat-conductive layer by means of an electrically and / or thermally conductive connection means.
  • the electrical and / or thermally conductive connecting means is preferably produced by means of a thermal spraying method.
  • the electrical connection and / or the component or a housing of the component by an opening in the electrical and / or thermally conductive layer by means of the electrical and / or thermally conductive bonding agent with the electrical and / or thermally conductive layer connected.
  • heat can advantageously be dissipated from the housing via the connecting means into the thermally conductive layer.
  • the material of the electrical connection or of the housing and the material of the electrical and / or thermally conductive layer are different from each other. More preferably, the material contacts the electrical connection and / or the electrically conductive layer directly.
  • the direct contacting means that the electrical connection and / or the housing is preferably formed preferably solid at least in an area formed to be connected to the material of a predetermined material, for example aluminum.
  • the electrically and / or thermally conductive layer is preferably massively formed of a predetermined material, such as copper, in an area formed to be bonded to the material.
  • the component is enclosed, in particular laminated, between the electrically conductive layer and an electrically insulating layer, after the electrical connection has been connected to the electrically conductive layer by means of the electrically conductive connection means.
  • a viable structure can advantageously be generated after the electrical connections have been connected to at least one area or part of the electrically conductive layer, for example to a conductor track.
  • FIG. 1 shows an exemplary embodiment of a method for producing a contact system.
  • an adhesive in particular adhesive, in this embodiment, an adhesive 12 and 14, each in the form of a drop on an electrically conductive film 10, previously also called electrically conductive layer applied.
  • the foil is, for example, a copper foil.
  • the adhesive in this example the adhesives 12 and 14, may be printed on the copper foil 10 by means of a mask or may be sprayed onto the copper foil 10.
  • the adhesive may be formed by a self-adhesive film other than shown in FIG.
  • Adhesive may be, for example, a solvent-containing adhesive which changes its viscosity upon evaporation of the solvent or a hot-melt adhesive.
  • the adhesive is an epoxy resin adhesive, which is designed to cure depending on heat or ultraviolet radiation, in particular to polymerize.
  • the adhesives 12 and 14 each contain solid bodies, which are spherical in this embodiment.
  • the solids 16 and 18 are exemplified.
  • electronic components in this embodiment an integrated circuit 20 and an integrated circuit 22, are connected to the device by means of the adhesive 14 or 12
  • the integrated circuit 20 is for this purpose pressed onto the adhesive 14.
  • the integrated circuit 20 can be brought together with the copper foil 10 until the integrated circuit 20 strikes the solids, in this exemplary embodiment the solids comprising the solid 18 and can no longer be pressed against the copper foil.
  • the adhesive 12 in this embodiment also includes solids, of which the solid 16 is exemplified.
  • the integrated circuits 20 and 22 are laminated by means of a laminate, for example a laminate film 30 as an electrically insulating layer together with the copper foil 10.
  • the integrated circuits 20 and 22 are protected after being laminated at least against mechanical impact.
  • the laminate film 30 may advantageously form a circuit carrier in which the circuits 20 and 22 are integrated.
  • the integrated circuits 20 and 22 can also be embedded, for example melted or injected, by means of a molding process by means of a molding compound. The integrated circuits will be so protected.
  • the integrated circuit 20 has electrical connections, an electrical connection 24 being designated by way of example.
  • the electrical connections are For example, at least formed in an intended for connection to an electrical conductor region, for example, aluminum or an aluminum alloy.
  • the integrated circuit 22 has - as the integrated circuit 20 - electrical see connections, of which the electrical connection 26 is exemplified.
  • the electrical connections of the integrated circuit 22 have, for example, aluminum in a region for electrical connection to a conductor track.
  • recesses 40, 42, 44 and 46 are drilled through the copper foil 10 and the adhesives 12 and 14, for example by means of a laser.
  • the recesses 40, 42, 44 and 46 each extend to an electrical connection of an integrated circuit.
  • the recess 40 extends to the terminal 24.
  • the recess 44 extends to the terminal 26th
  • a method step 74 the previously drilled recesses are then at least partially filled up by means of a thermal spraying method, for example by means of a plasma spray method, by means of an electrically conductive material as connecting means, for example an alloy comprising copper and / or aluminum, thus establishing an electrical connection. testifies.
  • a thermal spraying method for example by means of a plasma spray method
  • an electrically conductive material as connecting means for example an alloy comprising copper and / or aluminum
  • a plasma spray nozzle 60 is shown, for example, is sprayed from the electrically conductive material in the form of electrically conductive spray particles in the recess 40, where the spray particles join together to form an electrically conductive connection means, thus forming the electrically conductive connection means 50.
  • the spray particles are preferably formed as nanoparticles. As a result, even the smallest recesses can be filled with the connecting means.
  • the electrically conductive foil 10 is thus electrically conductively connected to the connection 24 by means of the connection means 50.
  • both the electrical terminal 24 and the foil 10 are removed from interfering oxides and / or contaminations with other substances, so that a flux or a Stratifications with an already mentioned bridge material for electrically connecting the electrical connection 24 with the film 10 can be dispensed with.
  • a method step 75 recesses and / or recesses are cut into the electrically conductive film 10, for example by means of a laser, so that electrically conductive conductor tracks are formed, which can each form connection lines of an electrical circuit or a circuit arrangement.
  • This process step for forming printed conductors can also take place before contacting, for example by means of photo-patterning.
  • the photo-patterning comprises, for example, application of a photoresist, exposure with a mask, removal of the photoresist at the exposed surface regions and etching of the electrically conductive layer on the exposed surface regions ,
  • the recesses 47 and 49 for generating electrical connections, in particular of printed conductors, are designated by way of example.
  • a film 1 for example, a copper foil, which is formed with a laminate formed by the laminate film 30 and extends parallel to the film 10 in this embodiment.
  • the films 10 and 11 thus enclose the laminate film 30 with the integrated circuits 20 and 22 between each other.
  • recesses 41 and 43 are bored in this exemplary embodiment-for example by means of a laser-which extend through the film 11 and further through the laminate film 30 all the way to a housing of the integrated circuit 20. By means of the recesses 41 and 43, heat can be removed from the integrated circuit 20.
  • the recesses which through the film 1 1 and further through the laminate film 30 through to a housing of the integrated circuit 22, by means a thermally conductive material as connecting means are at least partially filled, so that the film 1 1 is connected by means of the thermally conductive material to the housing of the integrated circuit 22.
  • a thermal spraying method a thermal spraying method
  • the recesses which through the film 1 1 and further through the laminate film 30 through to a housing of the integrated circuit 22, by means a thermally conductive material as connecting means are at least partially filled, so that the film 1 1 is connected by means of the thermally conductive material to the housing of the integrated circuit 22.
  • a two-layer structure of a contact system is shown, comprising two layers, each formed by a film, namely the films 10 and 1 1.
  • a contact system with more than two layers as part of a circuit arrangement.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
EP12703998.0A 2011-02-09 2012-01-31 Système de contact muni d'un moyen de connexion et procédé associé Withdrawn EP2673801A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011003852A DE102011003852A1 (de) 2011-02-09 2011-02-09 Kontaktsystem mit einem Verbindungsmittel und Verfahren
PCT/EP2012/051489 WO2012107312A1 (fr) 2011-02-09 2012-01-31 Système de contact muni d'un moyen de connexion et procédé associé

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EP2673801A1 true EP2673801A1 (fr) 2013-12-18

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DE102013114907A1 (de) 2013-12-27 2015-07-02 Pac Tech-Packaging Technologies Gmbh Verfahren zur Herstellung eines Chipmoduls
WO2017037206A1 (fr) 2015-09-02 2017-03-09 At & S Austria Technologie & Systemtechnik Aktiengesellschaft Dispositif électronique à composant électronique noyé

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Publication number Priority date Publication date Assignee Title
US20080032447A1 (en) * 2006-08-04 2008-02-07 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
DE102007029422A1 (de) * 2007-06-26 2009-01-08 Behr-Hella Thermocontrol Gmbh Thermische Kontaktierung eines Leistungsbauelements auf einem Schaltungsträger durch Kaltgasspritzen
DE102007044754A1 (de) * 2007-09-19 2009-04-09 Robert Bosch Gmbh Verfahren zur Herstellung einer elektronischen Baugruppe sowie elektronische Baugruppe

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Publication number Priority date Publication date Assignee Title
DE10153482A1 (de) 2001-10-30 2003-05-22 Leoni Ag Verfahren zum Behandeln eines elektrischen Leiters
TWI379363B (en) * 2007-04-24 2012-12-11 United Test & Assembly Ct Lt Bump on via-packaging and methodologies

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Publication number Priority date Publication date Assignee Title
US20080032447A1 (en) * 2006-08-04 2008-02-07 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
DE102007029422A1 (de) * 2007-06-26 2009-01-08 Behr-Hella Thermocontrol Gmbh Thermische Kontaktierung eines Leistungsbauelements auf einem Schaltungsträger durch Kaltgasspritzen
DE102007044754A1 (de) * 2007-09-19 2009-04-09 Robert Bosch Gmbh Verfahren zur Herstellung einer elektronischen Baugruppe sowie elektronische Baugruppe

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