WO2013088931A1 - Composition de formation d'un film de sous-couche de réserve et procédé de formation d'un motif de réserve l'utilisant - Google Patents

Composition de formation d'un film de sous-couche de réserve et procédé de formation d'un motif de réserve l'utilisant Download PDF

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WO2013088931A1
WO2013088931A1 PCT/JP2012/080210 JP2012080210W WO2013088931A1 WO 2013088931 A1 WO2013088931 A1 WO 2013088931A1 JP 2012080210 W JP2012080210 W JP 2012080210W WO 2013088931 A1 WO2013088931 A1 WO 2013088931A1
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group
carbon atoms
underlayer film
resist underlayer
resist
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PCT/JP2012/080210
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English (en)
Japanese (ja)
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徳昌 藤谷
坂本　力丸
貴文 遠藤
竜慈 大西
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日産化学工業株式会社
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Definitions

  • the present invention is a composition useful for forming a resist underlayer film between a substrate and a resist film formed thereon in order to obtain a resist pattern having a desired shape in a lithography process in the process of manufacturing a semiconductor device.
  • the present invention also relates to a composition for forming a resist underlayer film suitable for a lithography process using EUV exposure.
  • Patent Document 1 As a material for forming a resist underlayer film for EUV exposure, a resist underlayer film forming composition with reduced outgas generation is disclosed (Patent Document 1). In addition, although not a material specified for EUV exposure, a resist underlayer film forming composition containing a reaction product of a bifunctional diglycidyl ester compound and 2,4-dihydroxybenzoic acid is also disclosed (Patent Document) 2). However, these Patent Documents 1 and 2 do not describe or suggest a two-dimensional polymer obtained by a polyaddition reaction between a bifunctional diglycidyl ester compound and diphenyl sulfide or a derivative thereof.
  • the cross section of the resist pattern formed on the resist underlayer film in the direction perpendicular to the substrate is preferably rectangular.
  • the aromatic ring density in the resist underlayer film is increased.
  • the resist underlayer film is required to have a higher dry etching rate than the resist film (a higher selectivity of the dry etching rate).
  • a resist underlayer film formed from a composition containing a polymer that is an acrylic resin or a methacrylic resin is not always satisfactory with respect to the dry etching rate. This is probably because the bonds between carbon atoms (CC bond) constituting the main chain of the acrylic resin or methacrylic resin are not easily broken by dry etching.
  • the pattern line width to be formed is 32 nm or less, and the requirement for line edge roughness (hereinafter abbreviated as LER in this specification) of the pattern sidewall becomes severe.
  • LER line edge roughness
  • the formed resist pattern shape is a skirt shape or a shape in which adjacent patterns are connected without being separated, the LER value when observed from above the pattern becomes large, which adversely affects dimensional control. Therefore, it is strongly required to make the resist pattern shape rectangular.
  • the present invention includes an aromatic ring such as a benzene ring, the selectivity of the dry etching rate with respect to the resist film is large, and the LER which is a big problem in EUV (wavelength 13.5 nm) lithography is used. It aims at obtaining the composition for forming the resist underlayer film useful for reduction.
  • Another object of the present invention is to obtain a composition for forming a resist underlayer film in which a resist pattern on the resist underlayer film has a desired shape.
  • the resist underlayer film to be formed is insoluble in the solvent of the resist applied thereon, and no intermixing occurs between the resist underlayer film to be formed and the resist film. It is a condition.
  • a resist underlayer film for lithography comprising a polymer and a solvent, wherein the polymer has diphenyl sulfide or a derivative thereof introduced into the main chain of the polymer through an ether bond.
  • the ether bond is represented by “—O—”.
  • the oxygen atom of the ether bond is usually bonded to a carbon atom to form a C—O bond.
  • the polymer has, as a main chain, the following formula (1a) and the following formula (1b): (Wherein R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 13 carbon atoms, a hydroxyl group, a methoxy group, a thiol group, an acetyl group, a nitro group, an allyl group) Group, phenyl group, naphthyl group, A 1 , A 2 , A 3 , A 4 , A 5 and A 6 each independently represents a hydrogen atom, a methyl group or an ethyl group, and Q represents two carbon atoms. Represents a divalent organic group in between.)
  • a resist underlayer film forming composition for lithography having a repeating structural unit represented by
  • Q is the following formula (2): (Wherein Q 1 represents an alkylene group having 1 to 10 carbon atoms, a divalent organic group having an alicyclic hydrocarbon ring having 3 to 10 carbon atoms, a phenylene group, a naphthylene group or an anthrylene group, Group, naphthylene group and anthrylene group are each an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, and an alkylthio group having 1 to 6 carbon atoms. It may be substituted with at least one group selected from the group consisting of It is represented by
  • Q is also represented by the following formula (3):
  • X 1 is the following formula (4) or the following formula (5):
  • R 5 and R 6 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, Substituted with at least one group selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, and an alkylthio group having 1 to 6 carbon atoms And R 5 and R 6 together with the carbon atom to which they are bonded may form a ring having 3 to 6 carbon atoms.
  • X 1 represents formula (5)
  • the carbonyl group of formula (5) is bonded to the nitrogen atom of formula (3).
  • the repeating structural unit represented by the formula (1b) further includes a structural unit in which Q is represented by the formula (2) in addition to the structural unit represented by the formula (3). May be.
  • Q is also the following formula (6): (Wherein R 7 represents an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group is an alkyl group having 1 to 6 carbon atoms, (It may be substituted with at least one group selected from the group consisting of a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, and an alkylthio group having 1 to 6 carbon atoms.) But it is also represented.
  • the repeating structural unit represented by the formula (1b) further includes a structural unit in which Q is represented by the formula (2) in addition to the structural unit represented by the formula (6). May be.
  • the polymer has the following formula (7) as a main chain in addition to the formula (1a) and the formula (1b): It may further have a repeating structural unit represented by
  • the alkyl group is, for example, a methyl group, an ethyl group, an isopropyl group, an n-butyl group, or a cyclohexyl group.
  • the alkylene group having 1 to 10 carbon atoms include a methylene group, an ethylene group, an n-propylene group (trimethylene group), a propylene group [—CH 2 CH (CH 3 ) -group], and an n-pentylene group [— (CH 2 ) 5 -group], n-octylene group [-(CH 2 ) 8 -group], -CH 2 CH (CH 3 ) CH 2 -group, -CH (CH 3 ) CH 2 CH 2 CH (CH 3 ) -Group, cyclopentylene group, cyclobutylene group, cyclohexylene group, 2-methylcyclohexylene group.
  • the alicyclic hydrocarbon ring having 3 to 10 carbon atoms is, for example, a cyclohexane ring or an adamantane ring.
  • the alkoxy group having 1 to 6 carbon atoms is, for example, a methoxy group, an ethoxy group, an n-pentyloxy group, an isopropoxy group, or a cyclohexyloxy group.
  • Examples of the alkylthio group having 1 to 6 carbon atoms are a methylthio group, an ethylthio group, an n-pentylthio group, an isopropylthio group, and a cyclohexylthio group.
  • the alkenyl group is, for example, a 2-propenyl group or a 3-butenyl group.
  • the alkyl group, alkylene group, alkoxy group and alkylthio group are not limited to a straight chain, and may have a branched structure or a cyclic structure.
  • the halogen atom is, for example, a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.
  • the number of repeating structural units represented by the formula (1a) and the formula (1b) is, for example, in the range of 10 or more and 10,000 or less.
  • the polymer having a repeating structural unit in the main chain has a weight average molecular weight of, for example, 1,000 to 100,000.
  • Solvents contained in the resist underlayer film forming composition of the present invention include, for example, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monopropyl ether, methyl ethyl ketone, ethyl lactate, cyclohexanone, ⁇ -butyrolactone, N-methylpyrrolidone, a mixture of two or more selected from these solvents.
  • the ratio of the said solvent with respect to the resist underlayer film forming composition of this invention is 50 to 99.5 mass%, for example.
  • the polymer contained in the resist underlayer film forming composition of the present invention can be, for example, a proportion of 0.5% by mass or more and 30% by mass or less with respect to the resist underlayer film forming composition.
  • the resist underlayer film forming composition of the present invention may contain a crosslinkable compound (crosslinking agent) in addition to the polymer and the solvent, and may further contain a compound that promotes a crosslinking reaction.
  • a crosslinkable compound crosslinking agent
  • the component excluding the solvent is defined as a solid content
  • the solid content includes additives such as the polymer, the crosslinkable compound added as necessary, and the compound that promotes the crosslink reaction.
  • the ratio of the polymer in the solid content is, for example, 70% by mass or more and 98% by mass or less. When an additive is not included, the ratio of the polymer in the solid content can be 100% by mass.
  • the crosslinkable compound is, for example, a nitrogen-containing compound having 2 to 4 nitrogen atoms substituted with a methylol group or an alkoxymethyl group.
  • the crosslinkable compound is 1 for the polymer contained in the resist underlayer film forming composition of the present invention. It can be added in a proportion of not less than 30% by mass.
  • Specific examples of the cross-linkable compound include hexamethoxymethyl melamine, tetramethoxymethyl benzoguanamine, 1,3,4,6-tetrakis (methoxymethyl) glycoluril, 1,3,4,6-tetrakis (butoxymethyl) glycoluril.
  • 1,3,4,6-tetrakis (hydroxymethyl) glycoluril, 1,3-bis (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea and 1,1,3,3 -Tetrakis (methoxymethyl) urea.
  • the compound that promotes the crosslinking reaction is at least one selected from, for example, a sulfonic acid compound and a thermal acid generator.
  • stimulates the said crosslinking reaction can be added with respect to the polymer contained in the resist underlayer film forming composition of this invention in the ratio of 0.1 to 10 mass%, for example.
  • the sulfonic acid compound examples include p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium-p-toluenesulfonate, camphorsulfonic acid, 5-sulfosalicylic acid, 4-chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid, benzene Examples include disulfonic acid and 1-naphthalenesulfonic acid.
  • thermal acid generator examples include 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 4-acetoxyphenylbenzylmethylsulfonium hexafluoroantimonate, dibenzyl-4- Hydroxyphenylsulfonium hexafluoroantimonate, 4-acetoxyphenylbenzylsulfonium hexafluoroantimonate, 3-benzylbenzothiazolium hexafluoroantimonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2 -Nitrobenzyl tosylate.
  • the resist underlayer film forming composition of the present invention may contain a surfactant and / or an adhesion aid.
  • the surfactant is an additive for improving applicability to the substrate.
  • a known surfactant such as a nonionic surfactant or a fluorine-based surfactant can be used, and it can be added at a ratio of, for example, 0.2% by mass or less to the resist underlayer film forming composition of the present invention. it can.
  • the adhesion auxiliary agent is an additive for the purpose of improving the adhesion between the substrate or the resist film and the resist underlayer film, and is an additive that suppresses peeling of the resist film during development after exposure.
  • chlorosilanes, alkoxysilanes, silazanes, silanes, and heterocyclic compounds can be used, and they are added at a ratio of, for example, 2% by mass or less with respect to the resist underlayer film forming composition of the present invention. Can do.
  • the second aspect of the present invention includes a step of applying the resist underlayer film forming composition of the present invention on a semiconductor substrate and baking to form a resist underlayer film, a step of forming a resist film on the resist underlayer film,
  • a resist pattern forming method used for manufacturing a semiconductor device comprising: exposing a resist underlayer film and a semiconductor substrate covered with the resist film; and developing the resist film after the exposure.
  • the exposure performed in the second aspect of the present invention can be performed using EUV (wavelength 13.5 nm) or an electron beam.
  • EUV is an abbreviation for extreme ultraviolet light.
  • the resist for forming the resist film may be either a positive type or a negative type.
  • a chemically amplified resist that is sensitive to EUV or electron beam can be used.
  • the semiconductor substrate used in the second aspect of the present invention is typically a silicon wafer, but is an SOI (Silicon on Insulator) substrate, or gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (A compound semiconductor wafer such as GaP) may be used.
  • SOI Silicon on Insulator
  • GaAs gallium arsenide
  • InP indium phosphide
  • GaP gallium phosphide
  • a compound semiconductor wafer such as GaP may be used.
  • the resist underlayer film forming composition of the present invention includes a polymer in which diphenyl sulfide or a derivative thereof is introduced into the main chain through an ether bond.
  • a polymer in which diphenyl sulfide or a derivative thereof is introduced into the main chain through an ether bond For example, a two-dimensional polymer having a repeating structural unit represented by the formula (1a) and the formula (1b) is included. Therefore, a resist underlayer film having a large selection ratio of the dry etching rate to the resist film can be obtained without reducing the aromatic ring density.
  • the main chain of the polymer contained in the composition for forming a resist underlayer film of the present invention has a C—O bond (a bond between an oxygen atom of an ether bond and a carbon atom) that is more easily broken by dry etching than a C—C bond.
  • the resist underlayer film having a higher dry etching rate can be formed than using a conventional resist underlayer film forming composition in which the polymer contained is, for example, an acrylic resin or a methacrylic resin. Furthermore, the polymer used in the present invention has high solubility in a solvent, and the resist underlayer film forming composition of the present invention exhibits excellent coating properties.
  • the density of the resist underlayer film to be formed can be increased and, for example, EUV is used.
  • a resist pattern having a desired shape (a cross section in a direction perpendicular to the substrate is rectangular) can be formed.
  • the polymer contained in the resist underlayer film forming composition of the present invention has the following formula (8a): (Wherein R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 13 carbon atoms, a hydroxyl group, a methoxy group, a thiol group, an acetyl group, a nitro group, an allyl group) Represents a group, a phenyl group or a naphthyl group.) At least one compound represented by the following formula (8b): Wherein A 1 , A 2 , A 3 , A 4 , A 5 and A 6 each independently represents a hydrogen atom, a methyl group or an ethyl group, and Q is a divalent organic group between two carbon atoms. Represents a group.) A polyaddition reaction product with at least one compound represented by the formula:
  • a catalyst that activates an epoxy group by dissolving at least one compound represented by formula (8a) and at least one compound represented by formula (8b) in an organic solvent so as to have an appropriate molar ratio.
  • a polymer having a repeating structural unit represented by the formula (1a) and the formula (1b) can be obtained.
  • Bis (4-hydroxyphenyl) sulfide is an example of the compound represented by the formula (8a).
  • the catalyst for activating the epoxy group include a quaternary phosphonium salt such as ethyltriphenylphosphonium bromide and a quaternary ammonium salt such as benzyltriethylammonium chloride, which are represented by the formula (8a) used.
  • An appropriate amount can be selected from the range of 0.1% by mass to 10% by mass with respect to the total mass of the compound represented by formula (8b) and the compound represented by formula (8b).
  • the optimum temperature and time for the polymerization reaction can be selected from the range of 80 ° C. to 160 ° C. and 2 hours to 50 hours.
  • Q is the following formula (9): (Wherein Q 1 represents an alkylene group having 1 to 10 carbon atoms, a divalent organic group having an alicyclic hydrocarbon ring having 3 to 10 carbon atoms, a phenylene group, a naphthylene group or an anthrylene group, Group, naphthylene group and anthrylene group are each an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, and an alkylthio group having 1 to 6 carbon atoms. It may be substituted with at least one group selected from the group consisting of It is represented by
  • the compound represented by the formula (8b) is, for example, the following formula (10): Wherein Y represents an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, or an alkylthio group having 1 to 6 carbon atoms, and m is 0 Represents an integer of 1 to 4, and when m is 2 to 4, Y may be the same or different. It is represented by When m represents 0, it means that there is no substituent represented by Y.
  • Q is also represented by the following formula (11): (Wherein R 7 represents an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group is an alkyl group having 1 to 6 carbon atoms, (It may be substituted with at least one group selected from the group consisting of a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, and an alkylthio group having 1 to 6 carbon atoms.) But it is also represented.
  • the repeating structural unit of the polymer contained in the resist underlayer film forming composition of the present invention is exemplified by the following formulas (21) to (25).
  • the polymer having a repeating structural unit represented by the formula (21) includes a compound represented by the formula (8a) and a compound represented by the formula (8b) (represented by the formula (10)).
  • the polymer having a repeating structural unit represented by the formula (22) includes a compound represented by the formula (8a) and a compound represented by the formula (8b) (a compound represented by the formula (10)). It is obtained by polymerizing 2,4-dihydroxybenzoic acid.
  • the molar ratio of the structural unit represented by a and the structural unit represented by b is 1: 1.
  • the molar ratio of the structural unit represented by a and the structural unit represented by b is 1: 1.
  • the molar ratio of the structural unit represented by a and the structural unit represented by b is 1: 1.
  • the molar ratio of the structural unit represented by a and the structural unit represented by b is 1: 1.
  • the weight average molecular weights shown in the following Synthesis Examples 1 to 4 are based on measurement results by gel permeation chromatography (hereinafter abbreviated as GPC in this specification).
  • GPC gel permeation chromatography
  • a GPC device manufactured by Tosoh Corporation was used, and the measurement conditions were as follows.
  • Example 1 To 10 g of the solution having 2 g of the polymer obtained in Synthesis Example 1, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174) and p-toluenesulfonic acid 0 .05 g was mixed and dissolved in 25.9 g of propylene glycol monomethyl ether and 14.5 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with the hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition.
  • tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174
  • p-toluenesulfonic acid 0 .05 g
  • Example 2 To 10 g of the solution containing 2 g of the polymer obtained in Synthesis Example 2, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174) and p-toluenesulfonic acid 0 .05 g was mixed and dissolved in 25.9 g of propylene glycol monomethyl ether and 14.5 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with the hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition.
  • tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174
  • Example 3 To 10 g of the solution containing 2 g of the polymer obtained in Synthesis Example 3 above, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174) and p-toluenesulfonic acid 0 .05 g was mixed and dissolved in 25.9 g of propylene glycol monomethyl ether and 14.5 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with the hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition.
  • tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174
  • Example 4 To 10 g of the solution having 2 g of the polymer obtained in Synthesis Example 4, 0.5 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174) and p-toluenesulfonic acid 0 .05 g was mixed and dissolved in 25.9 g of propylene glycol monomethyl ether and 14.5 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition.
  • tetramethoxymethyl glycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powderlink [registered trademark] 1174
  • p-toluenesulfonic acid 0 .05 g
  • a resist underlayer film forming composition containing a copolymer represented by the following formula (26) as a polymer and further containing a crosslinking agent represented by the following formula (27) and p-toluenesulfonic acid as an additive was prepared. .
  • a commercially available resist solution (manufactured by Dow Chemical Company, trade name: UV113) was applied to the upper layer of the resist underlayer film using a spinner.
  • a resist film was formed by heating at 120 ° C. for 1 minute on a hot plate, and after exposure using an exposure apparatus, post-exposure heating (PEB: Post Exposure Bake) was performed at 115 ° C. for 1.5 minutes. After developing and rinsing the resist film, the film thickness of the resist underlayer film is measured, and the resist underlayer film and the resist film obtained from the resist underlayer film forming compositions prepared in Examples 1 to 4 are used. It was confirmed that no intermixing occurred.
  • a resist solution (manufactured by Sumitomo Chemical Co., Ltd., trade name: PAR710) was applied onto a silicon wafer using a spinner, and a resist film was formed by the same method as described above.
  • the dry etching rate was measured using a RIE system ES401 manufactured by Nippon Scientific Co., Ltd. under the condition using CF 4 as the dry etching gas.
  • Table 1 shows the ratio of the dry etching rate of the resist underlayer film to the dry etching rate of the resist film (selection ratio of the dry etching rate).
  • the resist underlayer film obtained from the resist underlayer film forming composition of the present invention has a large dry etching rate selectivity with respect to the resist film, and has a higher dry etching rate selectivity than Comparative Example 1. Therefore, compared with the resist underlayer film of the comparative example, the resist underlayer film of the present invention can shorten the time required for removal by dry etching. In addition, it is possible to suppress an undesirable phenomenon in which the thickness of the resist film on the resist underlayer film decreases as the resist underlayer film is removed by dry etching.
  • a resist underlayer film forming composition prepared in Example 2 of the present invention and Comparative Example 1 was spin-coated on a silicon wafer, and heated at 205 ° C. for 1 minute to form a resist underlayer film.
  • an EUV resist solution methacrylate resin resist
  • PEB is performed, cooled to room temperature on a cooling plate, developed and rinsed to form a resist pattern.
  • the evaluation was performed based on whether or not a 26 nm line and space can be formed and the line edge roughness (LER) of the pattern observed from the top surface of the pattern.
  • LER line edge roughness
  • the LER is measured by using a critical dimension scanning electron microscope (CD-SEM) to detect a pattern edge position two-dimensionally from the top and quantify the variation in the position as LER. Smaller LER is preferable with less variation. Specifically, using the white band width detected by the CD-SEM, measure the line width of a portion of 67% of the height from the bottom of the pattern to the top surface by 400 points, and 3 ⁇ of those values is taken as the LER value. did. Here, ⁇ represents a standard deviation.
  • CD-SEM critical dimension scanning electron microscope
  • Example 2 of the present invention As shown in Table 2, when the resist underlayer film forming composition obtained in Example 2 of the present invention is used, the LER value is small compared to Comparative Example 1, and the pattern dimensional accuracy in the manufacturing process is high. Was confirmed.

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Abstract

Le problème à résoudre dans cette invention consiste à obtenir une composition permettant de former un film de sous-couche de réserve qui présente une sélectivité de vitesse de gravure sèche élevée même si un cycle aromatique tel qu'un cycle benzène est contenu dans celle-ci, et qui est utile pour la réduction de la LER (rugosité de bord linéaire) qui devient un problème majeur en lithographie dans l'ultraviolet extrême (longueur d'onde : 13,5 nm). Un autre but de la présente invention consiste à obtenir une composition permettant de former un film de sous-couche de réserve sur lequel un motif de réserve peut recevoir une forme souhaitée. La solution consiste en une composition pour la formation d'un film de sous-couche de réserve pour lithographie, contenant un polymère et un solvant, et qui est caractérisée en ce que du diphénylsulfure ou un dérivé de celui-ci est introduit dans la chaîne principale du polymère par le biais d'une liaison éther.
PCT/JP2012/080210 2011-12-16 2012-11-21 Composition de formation d'un film de sous-couche de réserve et procédé de formation d'un motif de réserve l'utilisant WO2013088931A1 (fr)

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Cited By (3)

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CN105929634A (zh) * 2015-02-26 2016-09-07 台湾积体电路制造股份有限公司 具有浮动保护剂的光刻抗蚀剂
CN112479888A (zh) * 2019-09-11 2021-03-12 铠侠股份有限公司 化合物、聚合物、图案形成材料、图案形成方法及半导体装置的制造方法
WO2022071468A1 (fr) * 2020-10-01 2022-04-07 日産化学株式会社 Composition de formation de film de sous-couche de réserve contenant un produit réactionnel à extrémité bloquée

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JPWO2018074358A1 (ja) * 2016-10-19 2019-08-22 日産化学株式会社 レジストパターン被覆用水溶液及びそれを用いたパターン形成方法
CN113574085A (zh) * 2019-03-04 2021-10-29 日产化学株式会社 包含末端具有二醇结构的聚合生成物的药液耐性保护膜形成用组合物
WO2024024490A1 (fr) * 2022-07-29 2024-02-01 日産化学株式会社 Composition pour former un film de sous-couche de photorésine

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CN105929634A (zh) * 2015-02-26 2016-09-07 台湾积体电路制造股份有限公司 具有浮动保护剂的光刻抗蚀剂
CN105929634B (zh) * 2015-02-26 2020-01-14 台湾积体电路制造股份有限公司 具有浮动保护剂的光刻抗蚀剂
CN112479888A (zh) * 2019-09-11 2021-03-12 铠侠股份有限公司 化合物、聚合物、图案形成材料、图案形成方法及半导体装置的制造方法
CN112479888B (zh) * 2019-09-11 2023-12-08 铠侠股份有限公司 化合物、聚合物、图案形成材料、图案形成方法及半导体装置的制造方法
WO2022071468A1 (fr) * 2020-10-01 2022-04-07 日産化学株式会社 Composition de formation de film de sous-couche de réserve contenant un produit réactionnel à extrémité bloquée

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