WO2013080872A1 - Dispositif de prise de vue à semi-conducteurs et dispositif électronique - Google Patents

Dispositif de prise de vue à semi-conducteurs et dispositif électronique Download PDF

Info

Publication number
WO2013080872A1
WO2013080872A1 PCT/JP2012/080259 JP2012080259W WO2013080872A1 WO 2013080872 A1 WO2013080872 A1 WO 2013080872A1 JP 2012080259 W JP2012080259 W JP 2012080259W WO 2013080872 A1 WO2013080872 A1 WO 2013080872A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
refractive index
photoelectric conversion
center
solid
Prior art date
Application number
PCT/JP2012/080259
Other languages
English (en)
Japanese (ja)
Inventor
戸田　淳
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Publication of WO2013080872A1 publication Critical patent/WO2013080872A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
    • G02B5/188—Plurality of such optical elements formed in or on a supporting substrate
    • G02B5/1885—Arranged as a periodic array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter

Definitions

  • the present technology relates to a solid-state imaging device, and more particularly, to a solid-state imaging device in which a condensing element is provided on a light incident surface side of a pixel unit including a photoelectric conversion unit, and an electronic apparatus using the solid-state imaging device.
  • a solid-state imaging device in which a plurality of pixel units are arranged in a planar shape, photoelectric conversion units corresponding to light of each color of red (R), green (G), and blue (B) are arranged in the same pixel unit (single There is a configuration in which signal charges corresponding to light of R, G, and B colors are obtained by stacking in a cell.
  • Examples of such a stacked solid-state imaging device include a configuration in which three layers of photoelectric conversion films are stacked, and a configuration in which three layers of photodiodes are stacked in a semiconductor layer.
  • the stacked type As another example of the stacked type, a structure in which photodiodes corresponding to red (R) and blue (B) are stacked in a semiconductor layer, and a photoelectric conversion film corresponding to green (G) is stacked on top of the photodiode. is there.
  • the green (G) photoelectric conversion unit is arranged with respect to the red (R) photoelectric conversion unit as it goes to the periphery of the imaging region where the pixel units are arranged.
  • a configuration for shifting in the center direction of the imaging region has been proposed.
  • an object of the present technology is to provide a solid-state imaging device capable of effectively preventing the occurrence of color shading in a configuration in which photoelectric conversion units of respective colors are stacked in the same pixel unit.
  • a solid-state imaging device includes an imaging region in which a plurality of pixel units are arranged, a plurality of photoelectric conversion units stacked corresponding to each color in each pixel unit, and each pixel And a plurality of condensing elements arranged on the light receiving surface side with respect to the photoelectric conversion unit.
  • the condensing element has a configuration in which the principal ray of the obliquely incident light with respect to the light receiving surface is condensed close to perpendicular to the light receiving surface by increasing the asymmetry as the distance from the center of the imaging region increases.
  • the electronic device of this technique is an electronic device provided with such a solid-state imaging device.
  • the chief ray of obliquely incident light with respect to the light receiving surface is incident on the light receiving surface in each pixel unit arranged in the entire imaging region due to the asymmetry of the light collecting element provided in each pixel unit.
  • the light is condensed close to the vertical.
  • the chief ray is effectively incident at an incident angle close to perpendicular to all the photoelectric conversion units stacked in each pixel unit, and the sensitivity decreases in all the photoelectric conversion units stacked in the pixel unit. Variation of the is prevented.
  • FIG. 6 is a diagram for explaining asymmetry of the light collecting element in the solid-state imaging device according to the first embodiment. It is a schematic sectional drawing for demonstrating the structure of the solid-state imaging device of 2nd Embodiment. It is a schematic sectional drawing for demonstrating the structure of the solid-state imaging device of 3rd Embodiment.
  • FIG. 2 is a schematic plan view of a wavefront control type optical element (reference example 1) serving as a basic structure of the first example. It is a cross-sectional schematic diagram of the solid-state imaging device (comparison structure 1) using the wavefront control type optical element (reference example 1) which becomes the basic structure of the first example. It is a figure which shows the simulation result of the comparative structure 1. It is a figure which shows the simulation result of the comparative structure 1.
  • positioning state to the solid-state imaging device of the condensing element of a 2nd example. It is a schematic diagram of the solid-state imaging device using the condensing element of the 2nd example. It is a figure (lambda 540nm) which shows the simulation result of the solid-state imaging device using the condensing element of the 2nd example. It is sectional process drawing for demonstrating the manufacturing process of the condensing element of a 1st example and a 2nd example.
  • FIG. 1 shows an example of a schematic configuration using a complementary metal-oxide semiconductor (CMOS) type solid-state imaging device as an example of a solid-state imaging device to which the present technology is applied.
  • CMOS complementary metal-oxide semiconductor
  • the present technology is not limited to this, and can be similarly applied to a CCD (Charge Coupled Device) type solid-state imaging device.
  • CCD Charge Coupled Device
  • the solid-state imaging device 1 shown in this figure has an imaging region 4 in which a plurality of pixel units 3 including a photoelectric conversion unit are two-dimensionally arranged on one surface of a support substrate 2.
  • Each pixel unit 3 is arranged in a state where a plurality of photoelectric conversion units are stacked, and constitutes a stacked solid-state imaging device.
  • Each pixel unit 3 is provided with a pixel circuit composed of a floating diffusion, a read gate, a plurality of other transistors (so-called MOS transistors), a capacitive element, and the like corresponding to each photoelectric conversion unit.
  • Peripheral circuits such as a vertical shift register 5, a column signal processing circuit 6, a horizontal shift register 7, and a system control circuit 8 are provided in the peripheral portion of the imaging region 4 as described above.
  • the vertical shift register 5 selects the pixel drive line 9, supplies a pulse for driving the pixel unit 3 to the selected pixel drive line 9, and converts each photoelectric conversion in the pixel unit 3 arranged in the imaging region 4. Part is driven row by row. That is, the vertical shift register 5 selectively scans each pixel unit 3 arranged in the imaging region 4 in the vertical direction sequentially in units of rows.
  • the pixel signals based on the signal charges generated according to the amount of received light in each photoelectric conversion unit of each pixel unit 3 through the vertical drive line 10 wired perpendicular to the pixel drive line 9 are individually column signals. This is supplied to the processing circuit 6.
  • the column signal processing circuit 6 is arranged for each column of the pixel unit, for example, and outputs a signal output from each photoelectric conversion unit stacked on the pixel unit 3 for one row for a signal such as noise removal for each pixel column. Process. That is, the column signal processing circuit 6 performs correlated double sampling (CDS) for removing fixed pattern noise unique to the pixel portion, signal amplification, analog / digital conversion (AD), and the like. Perform signal processing.
  • CDS correlated double sampling
  • AD analog / digital conversion
  • the horizontal shift register 7 sequentially outputs horizontal scanning pulses, thereby selecting each of the column signal processing circuits 6 in order and outputting a pixel part signal from each of the column signal processing circuits 6.
  • the system control circuit 8 receives an input clock and data for instructing an operation mode, and outputs data such as internal information of the solid-state imaging device 1. That is, in the system control circuit 8, based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, the clock signal and the control signal that are the reference for the operation of the vertical shift register 5, the column signal processing circuit 6, the horizontal shift register 7, and the like. Is generated. These signals are input to the vertical shift register 5, the column signal processing circuit 6, the horizontal shift register 7, and the like.
  • the peripheral circuits 5 to 8 as described above and the pixel unit circuit provided in the imaging region 4 constitute a drive circuit that drives each pixel unit.
  • the peripheral circuits 5 to 8 may be arranged in a state of being stacked in the imaging region 4 on the surface opposite to the light receiving surface A in the solid-state imaging device 1. In this case, since the back side opposite to the side where the peripheral circuits 5 to 8 are provided is the light receiving surface A, this solid-state imaging device is a back side illumination type.
  • a condensing element layer 11 is laminated on the upper side of the support substrate 2 on the light receiving surface A side.
  • the light condensing element layer 11 includes a plurality of light condensing elements 13 corresponding to the respective pixel units 3, and the light condensing rate to the photoelectric conversion units arranged in the respective pixel units 3 is improved.
  • the structure of each light condensing element 13 is characteristic as described below.
  • FIG. 2 is a schematic cross-sectional view for explaining the configuration of the solid-state imaging device according to the first embodiment, and corresponds to the cross sections of both end portions and the central portion in the imaging region 4 shown in FIG.
  • FIG. 3 is a schematic plan view for explaining the configuration of the solid-state imaging device according to the first embodiment, and corresponds to the entire part of the imaging region 4.
  • the configuration of the solid-state imaging device according to the first embodiment will be described in detail based on these drawings.
  • the solid-state imaging device 1-1 includes a semiconductor layer 21 on a support substrate, for example, not shown here.
  • An imaging region 4 is set widely in the center of the semiconductor layer 21, and a plurality of pixel portions 3 are arranged in the imaging region 4.
  • a blue (B) photoelectric conversion unit 23 b and a red (R) photoelectric conversion unit 23 r are sequentially stacked from the light receiving surface A side. Yes.
  • each pixel portion 3 in the semiconductor layer 21 is provided with a plug region 25b connected to the photoelectric conversion portion 23b.
  • each photoelectric conversion part 23b, 23r is made of an n-type impurity region, is arranged in a p-type well in the semiconductor layer 21, and is surrounded by p-type.
  • the n-type photoelectric conversion units 23b and 23r and the surrounding p-type semiconductor layer 21 constitute a photodiode.
  • the plug region 25b connected to the photoelectric conversion unit 23b is n-type, and the signal charge accumulated in the photoelectric conversion unit 23b is drawn out in a predetermined direction. For example, when the driving circuit is provided on the back side with respect to the light receiving surface A, the signal charge accumulated in the photoelectric conversion unit 23b is drawn to the driving circuit side.
  • a light shielding film 33 is provided on the light receiving surface A side of the semiconductor layer 21 as described above via a light transmissive insulating film 31.
  • the light shielding film 33 includes a plurality of light receiving openings 33a.
  • Each light receiving opening 33a has a shape in which only the upper portions of the photoelectric conversion units 23b and 23r provided in each pixel unit 3 are widely exposed, and the other regions such as the plug region 25b and the element isolation region are completely covered with the light shielding film 33. Shape.
  • a plurality of pixel electrodes 37 made of a transparent conductive material are provided on the light shielding film 33 with a light transmissive insulating film 35 interposed therebetween. These pixel electrodes 37 are provided separately for each pixel unit 3, and are provided in a state where each pixel unit 3 is widely covered independently with the upper portion of the light shielding film 33 as a separation part. Each pixel electrode 37 is connected to the corresponding green (R) floating diffusion by a wiring not shown here.
  • An isolation insulating film 39 for isolating the pixel electrode 37 is provided on the insulating film 35 provided with the pixel electrode 37.
  • the isolation insulating film 39 includes pixel openings that widely open the pixel electrodes 37, and is provided so as to cover the wirings connected to the pixel electrodes 37. Therefore, the isolation insulating film 39 is formed with a planar pattern similar to the light shielding film 33.
  • a photoelectric conversion film 41 that absorbs green (G) light and performs photoelectric conversion, and a common electrode 43 made of a transparent conductive material are arranged in this order.
  • the photoelectric conversion film 41 and the common electrode 43 are provided as a solid film as a film common to all the pixel units 3, and each portion sandwiched between the pixel electrode 37 and the common electrode 43 in the photoelectric conversion film 41 is provided.
  • the photoelectric conversion unit 41g for green (G) in each pixel unit 3 is obtained.
  • the condensing element layer 11 is disposed on the common electrode 43 via the light-transmitting planarization insulating film 45.
  • the light condensing element layer 11 is a layer having a plurality of light condensing elements 13 corresponding to the pixel units 3.
  • Each condensing element 13 is arranged corresponding to each pixel unit 3, and for example, it is assumed that the center of the condensing element 13 is provided so as to coincide with the center of the light receiving opening 33 a in the pixel unit 3.
  • the center of the light condensing element 13 and the center of the light receiving opening 33a may be a graphic center when they are viewed in a plan view from the light receiving surface A side.
  • Such a condensing element 13 is as follows.
  • the condensing element 13 used here only needs to have a configuration capable of realizing the condensing function and the oblique correction function described in detail below, and the configuration of the condensing element 13 itself is not limited. .
  • each condensing element 13 is focused on the inside of the red (R) photoelectric conversion unit 23 r disposed farthest from the condensing element 13 in each pixel unit 3. Further, it is assumed that the incident light collected by the light condensing element 13 is minimized by the separation insulating film 39 and the light shielding film 33.
  • each condensing element 13 is specifically as follows.
  • the light receiving surface A is a light incident side surface of the light condensing element layer 11 having the light condensing element 13 and a light incident side surface of the semiconductor layer 21.
  • the condensing element 13 (x0, y0) arranged in such a central pixel portion 3 (x0, y0) has a non-symmetric property, that is, a condensing characteristic in which symmetry is ensured.
  • the incident light becomes oblique incident light
  • the condensing elements 13 (xa, yb) of the pixel unit 3 (xa, yb) arranged in the direction closer to the center of the imaging region 4 than the pixel unit 3 (xm, yn) are In addition, it has an oblique correction function with a weaker asymmetry than the condensing element 13 (xm, yn).
  • such an oblique correction function is such that the width of the pixel unit 3 is w, and the distance between the light condensing element 13 and the deepest part of the photoelectric conversion unit 23 r disposed farthest from the light condensing element 13 is d.
  • the oblique correction function of each condensing element 13 is set so that tan ⁇ ⁇ w / (2d). It is assumed that the light receiving opening 33a and the photoelectric conversion units 23b, 23r, and 41g are arranged at the center of the pixel unit 3. The distance d is precisely the distance from the middle part of the light condensing element 13 in the thickness direction.
  • the width w may be the width of the photoelectric conversion unit 23r disposed farthest from the light condensing element 13 or the width of the light receiving opening 33a. Among these, it is preferable to select the smallest value as the width w, since leakage of obliquely incident light is surely prevented, but the present invention is not limited to this.
  • the asymmetry of the condensing element 13 as described above depends on the distance from the center of the imaging region 4 of the pixel unit 3 in which each condensing element 13 is arranged. The larger the distance from the center of 4, the higher the asymmetry.
  • Such asymmetry may be stepwise, and a range may be set for the distance from the center of the imaging region 4, and asymmetry may be set for each range.
  • the condensing element 13 uses the refractive index difference of a light transmissive material, for example.
  • the condensing element using the difference in refractive index include a configuration in which light transmissive materials having different refractive indexes are alternately arranged and their distribution is adjusted.
  • such a condensing element adjusts an incident light by adjusting an arrangement interval (distribution) of light-transmitting materials having different refractive indexes with respect to the center of the condensing element.
  • This optical element can arbitrarily adjust the light condensing characteristics and the correction characteristics of obliquely incident light.
  • the principal ray h0 of the obliquely incident light with respect to the light receiving surface A is condensed close to the light receiving surface A so as to be perpendicular.
  • the chief ray h is effectively incident on all the photoelectric conversion units 23b, 23r, and 41g stacked in each pixel unit 3 at an incident angle ⁇ close to the vertical, and all the photoelectric conversion units 23b and 23r are incident. , 41g, variation in sensitivity reduction is prevented.
  • the photoelectric conversion units 23b, 23r, and 41g are incident on the pixel portion 3 at the end of the imaging region 4 with the oblique incident light as it is. Will be incident on.
  • the oblique incident light to be absorbed by the red (R) photoelectric conversion unit 23r is converted into a blue (B) plug region. 25b, the red sensitivity is lowered, the blue sensitivity is raised, and color shading with different sensitivity reduction rates for each color occurs.
  • the incident angle close to perpendicular to all the photoelectric conversion units 23b, 23r, and 41g stacked in the same pixel unit 3 is used.
  • the chief ray h is effectively incident at ⁇ . For this reason, variations in sensitivity decrease in all the photoelectric conversion units 23b, 23r, and 41g are prevented, and it is possible to effectively prevent the occurrence of color shading.
  • FIG. 5 is a schematic cross-sectional view for explaining the configuration of the solid-state imaging device according to the second embodiment, and corresponds to the cross sections of both end portions and the central portion in the imaging region 4.
  • the solid-state imaging device 1-2 of the second embodiment shown in this figure is different from the solid-state imaging device of the first embodiment in that the photoelectric conversion portions of the respective colors are only inside the semiconductor layer 21 without using a photoelectric conversion film.
  • the other configuration is the same as that of the first embodiment. For this reason, the same reference numerals are given to the same components as those in the first embodiment, and a detailed description thereof is omitted, and a characteristic configuration of the solid-state imaging device of the second embodiment will be described.
  • the solid-state imaging device 1-2 includes a blue (B) photoelectric conversion unit 23b from the light receiving surface A side and a green (G) in each pixel unit 3 inside the semiconductor layer 21.
  • the photoelectric conversion unit 23g for red and the photoelectric conversion unit 23r for red (R) are stacked and arranged.
  • Each pixel unit 3 inside the semiconductor layer 21 is provided with a plug region 25b connected to the photoelectric conversion unit 23b and a plug region (not shown) connected to the photoelectric conversion unit 23g. .
  • Each of the photoelectric conversion units 23b, 23g, and 23r is n-type and is disposed in a p-type well in the semiconductor layer 21, and the periphery is covered with p-type. Thereby, the n-type photoelectric conversion units 23b, 23g, and 23r and the surrounding p-type semiconductor layer 21 portion constitute a photodiode.
  • Each plug region 25b is n-type, and the signal charge accumulated in the photoelectric conversion unit 23b is drawn out to a drive circuit provided on the back side of the light receiving surface A.
  • a light shielding film 33 is provided on the light receiving surface A side of the semiconductor layer 21 as described above via a light-transmissive insulating film 31.
  • the light shielding film 33 includes a plurality of light receiving openings 33a.
  • the light condensing element layer 11 similar to that of the first embodiment is disposed on the light shielding film 33 via a light-transmitting planarization insulating film 45.
  • a plurality of condensing elements 13 corresponding to the respective pixel portions 3 are provided so that the centers thereof coincide with the light receiving openings 33 a. It is assumed that the light receiving opening 33a and the photoelectric conversion units 23b, 23g, and 23r are arranged at the center of the pixel unit 3.
  • Each condensing element 13 is the same as in the first embodiment, and as the asymmetry is increased as the distance from the center of the imaging region 4 increases, the principal ray h0 of obliquely incident light with respect to the light receiving surface A in all the pixel units 3 is obtained.
  • the light collecting surface is configured to collect light close to perpendicular to the light receiving surface A.
  • each pixel unit 3 the chief ray h 0 of obliquely incident light with respect to the light receiving surface A is collected close to the light receiving surface A perpendicularly. For this reason, the chief ray h is effectively incident on all the photoelectric conversion units 23b, 23g, and 23r stacked in each pixel unit 3 at an incident angle ⁇ close to the vertical, and all the photoelectric conversion units 23b and 23g are incident. , 23r can prevent variations in sensitivity.
  • the solid-state imaging device 1-2 has a configuration in which all the photoelectric conversion units 23b, 23g, and 23r are stacked in the semiconductor layer 21.
  • the pupil correction that shifts the arrangement position in the surface direction of the light receiving surface A cannot be applied.
  • the incident angle close to perpendicular to all the photoelectric conversion units 23b, 23g, and 23r stacked in the pixel unit 3 is used.
  • the chief ray h can be effectively incident at ⁇ . For this reason, even if all the photoelectric conversion units 23b, 23g, and 23r are stacked in the semiconductor layer 21, variations in the sensitivity of each color are prevented, and the occurrence of color shading can be effectively prevented. It becomes possible.
  • FIG. 6 is a schematic cross-sectional view for explaining the configuration of the solid-state imaging device according to the third embodiment, and corresponds to the cross sections of both end portions and the central portion in the imaging region 4.
  • the solid-state imaging device 1-3 according to the third embodiment shown in this figure is different from the solid-state imaging device according to the first embodiment in that the pupil correction in which the arrangement of the condensing elements 13 is shifted with respect to the pixel unit 3 is combined.
  • the other configurations are the same as those of the first embodiment. For this reason, the same reference numerals are given to the same components as those in the first embodiment, and a detailed description thereof will be omitted, and a characteristic configuration of the solid-state imaging device of the third embodiment will be described.
  • the light collecting elements 13 provided on the light collecting element layer 11 are arranged in the imaging region 4 as the distance from the center of the imaging region 4 increases. It is arranged with a large shift in the center direction.
  • the light receiving opening 33a and the photoelectric conversion units 23b, 23r, and 41g are arranged at the center of the pixel unit 3.
  • the center of the photoelectric conversion units 23r, 23b, and 41g in the pixel unit 3 is the center ⁇ 3 and the center of each condensing element 13 is the center ⁇ 13
  • the collection of the pixel units 3 that are away from the center of the imaging region 4 is used.
  • the optical element 13 is arranged so that the center ⁇ 13 is greatly shifted in the center direction of the imaging region 4.
  • the shift amount D
  • is larger as the light condensing element 13 of the pixel unit 3 is farther from the center of the imaging region 4.
  • the center ⁇ 3 of the pixel unit 3 and the center ⁇ 13 of the light condensing element 13 may coincide with each other, and the shift amount
  • 0.
  • each condensing element 13 increases the asymmetry as the distance from the center of the imaging region 4 increases, so that the principal ray h0 of obliquely incident light with respect to the light receiving surface A is received by the light receiving surface.
  • the light is condensed close to perpendicular to A.
  • the third embodiment is different from the first embodiment in that the arrangement state of the light condensing element 13 is pupil-corrected, and thus the principal ray that has passed through the light condensing element 13 as the distance from the center of the imaging region 4 increases.
  • the incident angle ⁇ 0 of the principal ray h0 of the incident light before passing through the condensing element 13 and the incident angle ⁇ of the principal ray h of the incident light after passing through the condensing element 13 are:
  • increases as the pixel portion 3 is farther from the center of the imaging region 4.
  • each optical member located between the condensing element 13 and the semiconductor layer 21 may also be shifted to a pupil corrected position.
  • These optical members are, for example, the opening of the light receiving opening 33a, the pixel electrode 37, and the separation insulating film 39 (that is, the photoelectric conversion unit 41g), and along the principal ray h of the incident light after passing through the condensing element 13, These optical members may be shifted toward the center of the imaging region 4.
  • the shift of the light condensing element 13 toward the center of the imaging region 4 as described above may be performed by changing the shift amount D step by step, and a range is set for the distance from the center of the imaging region 4 and the range is changed.
  • the shift amount may be set to.
  • the solid-state imaging device 1-3 of the third embodiment described above has a configuration in which pupil correction is combined with the configuration of the first embodiment. For this reason, for example, when the imaging area 4 is increased in area and the oblique correction function by the condensing element 13 becomes insufficient at the periphery of the imaging area 4, the lack of the correction function can be compensated by pupil correction. become.
  • the solid-state imaging device having the configuration in which the pixel units 3 are arranged in a two-dimensional manner is illustrated.
  • the pixel units 3 are arranged in a one-dimensional manner.
  • the present invention can be similarly applied to the solid-state imaging device having the configuration, and the same effects as those of the embodiments can be obtained.
  • FIG. 7 is a diagram for explaining the basic principle of the wavefront control type optical element used for the light condensing element of the first example, and an equiphase surface (wavefront) 100 of the light H incident on the optical element 200 together with the optical element 200. -1, 10-2,...
  • the wavefront control type optical element described here is different from the light collecting element used in the embodiment of the present technology in that it has a symmetrical structure.
  • the optical element 200 shown in FIG. 7A uses a mechanism of a condensing element having a periodic structure of a sub-wavelength (Subwave Lens: SWLL).
  • SWLL sub-wavelength
  • layers made of light-transmitting materials having different refractive indexes are alternately arranged in a direction perpendicular to the optical axis of the element, and the distribution of each line width is set to a wavelength order or smaller than that. It has a light collecting function by adjusting.
  • Such an optical element 200 includes a low refractive index layer 200A having a rectangular cross section with a refractive index n0 and a high refractive index layer 200B having a rectangular cross section with a refractive index n1 (n1> n0) higher (larger) than the refractive index n0.
  • a low refractive index layer 200A having a rectangular cross section with a refractive index n0
  • a high refractive index layer 200B having a rectangular cross section with a refractive index n1 (n1> n0) higher (larger) than the refractive index n0.
  • the high refractive index layer 200B is densely arranged at the mechanical center CL of the optical element 200, and the arrangement of the high refractive index layer 200B becomes sparse as the distance from the center CL increases.
  • the low-refractive index layer 200A has a structure in which the low-refractive index layer 200A is roughly arranged at the center CL, densely arranged with distance from the center CL, and densely arranged with distance from the center CL. Accordingly, in the optical element 200, the arrangement state of the high refractive index layer 200B and the low refractive index layer 200A has a left-right symmetric structure in a cross section passing through the center CL. It is assumed that the mechanical center CL of the optical element 200 coincides with the optical axis position in this example.
  • each layer in the optical element 200 includes a structure in which the line width of the high refractive index layer gradually increases toward the center CL of the optical element, and the line width of the low refractive index layer is the center of the optical element. There are structures that gradually become smaller toward CL, and further a combination of these.
  • a plate-like single material layer 100 having a refractive index n0 is adjacent to the light incident surface side (specifically, adjacent to the phase surface 100-4 of the incident light H).
  • the plate-like single material layer 101 having a refractive index n0 is provided on the light transmission surface side.
  • c0 is the speed of light in vacuum
  • n is the refractive index of the medium. Therefore, in the low refractive index layer 200A having the refractive index n0 and the high refractive index layer 200B having the refractive index n1, the speed of light c is reduced to a different value corresponding to each refractive index.
  • the line width in the horizontal direction perpendicular to the optical axis is about the wavelength order or shorter.
  • the light H passing through the optical element 200 is continuously connected to the wave fronts inside the adjacent low-refractive index layer 200A and high-refractive index layer 200B, that is, the equiphase plane, due to the continuity of the wave equation. .
  • the equiphase surface (wavefront) of the light H passing through the optical element 200 is curved according to the arrangement of the line widths of the high refractive index layer 200B and the low refractive index layer 200A.
  • the optical element 200 has a structure in which the density of the high refractive index layer 200B is dense at the center CL. Therefore, as shown in FIG. 7B, the wave front of the light passing through such an optical element 200 has its entire equiphase surface curved toward the center CL. Thereby, the optical element 200 has a light condensing property.
  • the optical element 200 as described above can be a very thin convex lens.
  • the lens having a thickness of 1 ⁇ m or more can be thinned to 0.5 ⁇ m or less by using the optical element of this configuration.
  • the lens thickness can be reduced, when applied to a solid-state imaging device, the color reproducibility is improved because the color mixing is reduced by the thinner upper layer. In addition, since the color mixture is reduced, an arithmetic process for restoring the color reproducibility becomes unnecessary, and the generation of extra noise due to the arithmetic process is reduced. Further, since the lens thickness is thin, even when the F value of the external imaging system lens is reduced, the oblique incident light does not increase, and the problem of lowering the F value light sensitivity does not occur.
  • the optical element 200 as described above may have a structure in which the high refractive index layer 200B is dense at the center CL and becomes sparse as the distance from the center CL increases.
  • a simple planar structure can be adopted.
  • the planar shape of each of the high refractive index layer 200B and the low refractive index layer 200A can be any ring shape such as a circle, an ellipse, a square, a rectangle, and a triangle.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A may have a circular shape or a circular ring shape, and a ring shape as a whole.
  • each of the high refractive index layer 200B and the low refractive index layer 200A may have an elliptical shape or an elliptical ring shape that is generally annular.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A may have a square shape or a square ring shape as a whole and a ring shape.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A may have a rectangular shape or a rectangular ring shape, and may be an annular shape as a whole.
  • the optical element 200 described above may be one in which each of the high refractive index layer 200B and the low refractive index layer 200A has a triangular or triangular ring shape and is generally annular. Further, the optical element 200 has a circular or circular ring shape at the center and a rectangular ring shape at the outer periphery, and has different shapes on the center side and the outer periphery side, and combines them as a whole. You may make it become cyclic
  • FIG. 9 is a schematic cross-sectional view of a solid-state imaging device (comparative structure 1) using the optical element 200 (reference example 1) serving as the basic structure of the first example described above.
  • 10 and 11 are diagrams illustrating the results of wave simulation performed on the solid-state imaging device. Note that the Finite-difference time-domain method (FDTD method) was applied to all wave simulations thereafter.
  • FDTD method Finite-difference time-domain method
  • the single material layer 101, the optical element 200, and the single material layer 100 are provided via the antireflection film 301 on the substrate 300 on which the photoelectric conversion unit is provided. It is a configuration.
  • the single material layer 101 disposed between the substrate 300 and the optical element 200 has a total film thickness of 3.6 ⁇ m with the antireflection film 301.
  • This total film thickness is a substantial light collection length (lens length) in the optical element 200.
  • the film thickness of the optical element 200 of the first example is set to be sufficiently thin compared to the light collection length.
  • Three optical elements 200 are arranged with a size (pitch) of 3.6 ⁇ m in accordance with the size (pixel pitch) of the pixel portion.
  • this optical element 200 low refractive index layers 200A and high refractive index layers 200B are alternately arranged.
  • the film thickness of these optical elements 200 is 0.5 ⁇ m.
  • the line width of the high refractive index layer 200B gradually increases toward the center of each optical element 200, and the line width of the low refractive index layer 200A gradually decreases toward the center of the optical element 200. Is arranged.
  • the line widths of the low refractive index layer 200A and the high refractive index layer 200B in the optical element 200 are as illustrated with a minimum line width of 0.1 ⁇ m.
  • the line width of the high refractive index layer 200B is 0.45 ⁇ m, 0.25 ⁇ m, 0.20 ⁇ m, 0.15 ⁇ m, and 0.10 ⁇ m from the center CL of the optical element 200 toward the edge.
  • the line width of the low refractive index layer 200A is 0.10 ⁇ m, 0.15 ⁇ m, 0.20 ⁇ m, 0.225 ⁇ m, and 0.40 ⁇ m from the center of the optical element 200 toward the edge.
  • a wave simulation was performed when the light H was incident on the optical element 200 as described above from a direction perpendicular to the arrangement direction of the low refractive index layer 200A and the high refractive index layer 200B constituting the optical element 200. .
  • cT is the speed of light c multiplied by time T, and represents the distance (unit: ⁇ m) that the light travels in the vacuum.
  • it may be considered as the time taken for the simulation.
  • a in FIG. 10 is a simulation result immediately after green light passes through the optical element 200. From this result, it can be seen that the wavefront of the front (substrate 300 side) of the green light that has passed through the optical element 200 is concave.
  • FIG. 12 is a schematic cross-sectional view of a solid-state imaging device (comparative structure 2) using the optical element that is the basic structure of the first example described above.
  • FIG. 13 is a diagram illustrating a result of wave simulation performed on the solid-state imaging device.
  • the solid-state imaging device of the comparative structure 2 shown in FIG. 12 has the basic structure of the solid-state imaging device of the comparative structure 1 (see FIG. 9), and the low refractive index layer 200A and the high refractive index layer 200B that constitute the optical element 200. Only the line width is changed.
  • the line widths of the low refractive index layer 200A and the high refractive index layer 200B in the optical element 200 are as illustrated with a minimum line width of 0.2 ⁇ m.
  • the line width of the high refractive index layer 200B is 0.75 ⁇ m, 0.25 ⁇ m, 0.25 ⁇ m, and 0.20 ⁇ m from the center CL of the optical element 200 toward the edge.
  • the line width of the low refractive index layer 200A is 0.20 ⁇ m, 0.25 ⁇ m, and 0.375 ⁇ m from the center of the optical element 200 toward the edge.
  • the optical element 200 has the low refractive index layer 200A and the high refractive index layer 200B even when the minimum line width of the low refractive index layer 200A and the high refractive index layer 200B is 0.2 ⁇ m.
  • a light collecting effect can be obtained.
  • FIG. 14 is a schematic cross-sectional view of a solid-state imaging device (comparative structure 3) using the optical element that is the basic structure of the first example described above.
  • FIG. 15 is a diagram illustrating a result of wave simulation performed on the solid-state imaging device.
  • the solid-state imaging device of the comparative structure 3 shown in FIG. 14 basically has the solid-state imaging device of the comparative structure 1 (see FIG. 9) as a basic structure, but only the film thickness (substantially element thickness) of the optical element 200. It is a changed configuration.
  • the film thickness of the optical element 200 is from 0.5 ⁇ m of the comparative structure 1 (see FIG. 9) to a thinner 0.3 ⁇ m.
  • the number and arrangement interval (line width) of the low-refractive index layers 200A and the high-refractive index layers 200B may be adjusted as necessary. It is exactly the same as Structure 1 (see FIG. 9).
  • FIG. 16 is a schematic cross-sectional view of a solid-state imaging device (comparative structure 4) using the optical element that is the basic structure of the first example described above.
  • FIG. 17 is a diagram illustrating a result of wave simulation performed on the solid-state imaging device.
  • the solid-state imaging device of the comparative structure 4 shown in FIG. 16 is based on the solid-state imaging device of the comparative structure 1 (see FIG. 9), and the size of the optical element 200 itself is changed from a size (pitch) of 3.6 ⁇ m to 1.4 ⁇ m. This is a reduced configuration. Along with this, the size of each component and the configuration of the high refractive index layer 200B constituting the optical element 200 are changed as follows.
  • the condensing length that is, the distance between the substrate 300 and the optical element 200 is changed to 2.3 ⁇ m, and the thickness of the antireflection film 301 is 0.1 ⁇ m.
  • Antireflection films 201 for reducing optical loss due to reflection are provided on both the light incident side and the light exit side of these high refractive index layers 200B.
  • the antireflection film 201 is a thin film and does not affect the light collection effect itself of the optical element 200 regardless of the thickness or width.
  • the line widths of the low refractive index layer 200A and the high refractive index layer 200B in the optical element 200 are as illustrated with a minimum line width of 0.1 ⁇ m.
  • the line width of the high refractive index layer 200B is 0.25 ⁇ m, 0.15 ⁇ m, and 0.10 ⁇ m from the center CL of the optical element 200 toward the edge.
  • the line width of the low refractive index layer 200A is 0.10 ⁇ m, 0.13 ⁇ m, and 0.19 ⁇ m from the center CL of the optical element 200 toward the edge.
  • FIG. 18 is a diagram showing the result of simulating the condensing characteristic of oblique light with respect to the optical element having the basic structure of the first example described above.
  • This is a phenomenon that occurs even in a normal spherical lens, but it also occurs in the optical element 200 described above.
  • FIG. 19 is a view for explaining the basic principle of the light condensing element of the first example, and shows an equiphase surface (wavefront) of the light H incident on the optical element 203 together with the optical element 203. Note that the optical element 203 described here is different from the condensing element used in the embodiment of the present technology in that it does not have a condensing function as described below.
  • the optical element 203 shown in this figure uses a mechanism of a condensing element (Subwave length: Lens: SWLL) having a subwavelength periodic structure.
  • a condensing element Subwave length: Lens: SWLL
  • layers made of light-transmitting materials having different refractive indexes are alternately arranged in a direction perpendicular to the optical axis of the element, and the distribution of each line width is set to a wavelength order or smaller than that.
  • an oblique correction mechanism is provided to make the incident angle of oblique incident light close to vertical.
  • Such an optical element 203 includes a low-refractive index layer 200A having a rectangular cross section with a refractive index n0 and a high refractive index layer 200B having a rectangular cross section with a refractive index n1 (n1> n0) higher (larger) than the refractive index n0.
  • a low-refractive index layer 200A having a rectangular cross section with a refractive index n0
  • a high refractive index layer 200B having a rectangular cross section with a refractive index n1 (n1> n0) higher (larger) than the refractive index n0.
  • the optical element 200 differs from the optical element 200 described above in that the arrangement density of the low refractive index layer 200A and the high refractive index layer 200B is asymmetric.
  • the mechanical center CL of the optical element 203 is assumed to coincide with the optical axis position in this example.
  • Such asymmetry is, for example, a structure in which the line width of the high refractive index layer 200B gradually increases from one end side of the optical element 203 to the other end side, or the line of the low refractive index layer 200A.
  • the width gradually decreases There are structures in which the width gradually decreases, and also a structure in which these are combined.
  • a plate-like single material layer 100 having a refractive index n0 is provided adjacent to the light incident surface side, and a plate-like material having a refractive index n0 is provided on the light transmitting surface side.
  • a single material layer 101 is provided.
  • the optical axis of the optical element 203 from the right-hand direction in the drawing that is, the direction in which the density of the high refractive index layer 200B is high
  • the wavefront of the light passing through the optical element 203 is densely arranged on the side where the high refractive index layer 200B is densely caused by the difference in the light velocity c between the high refractive index layer 200B and the low refractive index layer 200A. Tilt to the right (on the drawing).
  • the optical element 203 performs an oblique correction function for converting oblique incident light into vertically incident light.
  • Such an optical element 203 can be applied to each pixel portion of the solid-state imaging device 1, for example.
  • a light receiving optical system in which an imaging lens 305 is disposed via a diaphragm 303 is disposed on the light incident surface side of the solid-state imaging device 1.
  • the incident angle of the principal ray h0 from the subject 307 that has passed through the imaging lens 305 increases toward the end of the solid-state imaging device 1.
  • the optical element 203 provided in the solid-state imaging device 1 only needs to have a weaker correction function at the center of the solid-state imaging device 1 and a stronger correction function toward the end.
  • the asymmetry of the arrangement density of the high refractive index layer 200B may be increased toward the end of the imaging region in the solid-state imaging device 1.
  • the optical element 203 as described above can be formed into a very thin convex lens as in the case of the optical element 200 described above.
  • the optical element 203 as described above may have a structure in which a high refractive index layer 200B is present in a large proportion on one side and a small proportion is present on the opposite side with respect to the center CL even in a planar structure. As long as this is the case, various planar structures can be adopted.
  • linear low-refractive index layers 200A and high-refractive index layers 200B are arranged in parallel while gradually changing the line width. It may be a structure. Although illustration is omitted here, the low refractive index layer 200A and the high refractive index layer 200B may be curved.
  • FIG. 22 is a schematic diagram of a solid-state imaging device (example structure 1) using the light condensing element of the first example.
  • FIG. 23 is a diagram illustrating a result of a wave simulation performed on the solid-state imaging device.
  • the solid-state imaging device shown in FIG. 22 is based on the solid-state imaging device of the comparative structure 1 (see FIG. 9) described above, and an optical element 203 having an oblique correction function is added to the solid-state imaging device.
  • the light condensing element 13-1 is configured by stacking 203 layers.
  • the optical element 203 having an oblique correction function is laminated on the light H incident surface side of the optical element 200 having a condensing function.
  • Three such condensing elements 13-1 are arranged with a size (pitch) of 3.6 ⁇ m in accordance with the size (pixel pitch) of the pixel portion.
  • the optical element 203 having the oblique correction function is arranged by shifting the center of the element in the incident direction of the light H.
  • the optical element 200 having a condensing function has the configuration described in the comparative structure 1 (see FIG. 9).
  • the optical element 203 having an oblique correction function has a film thickness of 0.5 ⁇ m.
  • the line width of the high refractive index layer 200B is 0.45 ⁇ m, 0.35 ⁇ m, 0.25 ⁇ m, 0.20 ⁇ m, 0.15 ⁇ m, 0.11 ⁇ m, and 0.10 ⁇ m in order from the incident direction of the obliquely incident light H.
  • the line widths of the low refractive index layer 200A are 0.10 ⁇ m, 0.12 ⁇ m, 0.185 ⁇ m, 0.235 ⁇ m, 0.260 ⁇ m, 0.345 ⁇ m, and 0.745 ⁇ m in order from the incident direction of the light H.
  • the right-hand direction in the drawing that is, the direction in which the density of the high refractive index layer 200B is high in the condensing element 13-1.
  • An oblique correction light condensing effect that condenses light at approximately the center of 1 is obtained.
  • the condensing element 13-1 of the first example can be used as the condensing element 13 of each embodiment described above.
  • the light condensing element 13-1 may be formed using only the optical element 200 having a light condensing function.
  • the optical element 203 having an oblique correction function is not necessary.
  • the incident angle of obliquely incident light increases toward the end of the imaging region.
  • the light condensing element 13-1 arranged in the pixel portion at the end of the imaging region increases the asymmetry in the optical element 203 having the oblique correction function, and the center direction of the imaging region in the light condensing element 13-1.
  • the arrangement density of the high refractive index layer 200B is increased.
  • the oblique correction function by the optical element 203 is strengthened toward the end of the imaging region, and the condensing point can be brought to the center of the pixel portion by bringing oblique incident light closer to the vertical.
  • the condensing element 13-1 of the first example the configuration in which the optical element 200 having a condensing function and the optical element 203 having an oblique correction function are stacked in order from the light incident side has been described.
  • the stacked structure of the optical elements 200 and 203 is not limited to this, and the structure in which the stacking order is reversed or the optical element 200 having the light condensing function is sandwiched between the optical elements 203 having the oblique correction function. There may be.
  • FIG. 24 is a diagram illustrating a configuration of a second example of the light collecting element used in each of the above-described embodiments, and shows an equiphase surface together with the light collecting element.
  • the condensing element 13-2 shown in this figure has a condensing function and oblique correction by designing the two optical elements 200 and 203 constituting the condensing element of the first example described above as one optical element. It is characteristic that it is composed of one optical element having a function.
  • Such a condensing element 13-2 has a configuration in which low-refractive index layers 200A and high-refractive index layers 200B similar to those in the first example are alternately arranged. By having both a structure that becomes sparse as it goes away from the center and a structure that becomes asymmetrical with respect to the center of the element, it has a feature in that it has a condensing function and an oblique correction function at the same time.
  • the condensing element 13-2 may have the same configuration as the optical element 200 having a condensing function, and an oblique correction function is unnecessary. Therefore, the condensing element 13-2 arranged at the center of the imaging region has zero asymmetry, and the high refractive index layer 200B is evenly distributed from all directions toward the mechanical center of the condensing element 13-2. The arrangement state of gradually becomes dense.
  • the condensing element 13-2 arranged at the end of the imaging region has a configuration with higher asymmetry, and the center of gravity O of the condensing element 13-2 is greatly shifted from the center toward the center of the imaging region. .
  • the above-mentioned “center of gravity O” is a position where the integral of the first moment of the surrounding refractive index becomes zero. That is, when the refractive index n1 of the high-refractive index layer 200B and the refractive index n0 of the low-refractive index layer 200A are set in the plane of the light condensing element 13-2, the following formula is expressed in the (x, y) coordinates in the plane. When (1) holds, the position of (x1, y1) is defined as “centroid O”.
  • the oblique correction function by the condensing element 13-2 is strengthened toward the end of the imaging region, and the incident angle of the oblique incident light is zero, that is, close to the optical axis of the condensing element 13-2, and the condensing point is set to the pixel.
  • the structure is taken to the center of the department.
  • each condensing element 13-1 having asymmetry has a structure in which the arrangement density of the high refractive index layer 200B gradually increases toward the asymmetric center of gravity O, thereby obtaining a condensing function.
  • the arrangement of the high refractive index layer 200B is the densest arrangement on the side toward the center of the imaging region with respect to the asymmetric center of gravity O, and the arrangement of the high refractive index layer B is on the opposite side.
  • each layer in the light condensing element 13-2 for example, a structure in which the line width of the high refractive index layer 200B gradually increases toward the center of gravity O, and the line width of the low refractive index layer 200A is as follows. There are structures that gradually decrease toward the center of gravity O, and structures that combine these.
  • the light condensing element 13-2 as described above may have a structure in which the high refractive index layer 200B is dense at the center of gravity O and becomes sparse as the distance from the center of gravity O increases.
  • various planar structures can be adopted.
  • the planar shape of each of the high refractive index layer 200B and the low refractive index layer 200A can be any ring shape such as a circle, an ellipse, a square, a rectangle, and a triangle. Then, by combining those which can be regarded as the same shape into a ring shape or those having different shapes, the line width of each ring varies stepwise from left to right not at the center of the element but at the center of gravity O. What is necessary is just composition.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A has a circular shape or a circular ring shape as a whole, and its center of gravity O is the center of the imaging region. It may be biased in the direction.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A has an elliptical shape or an elliptical ring shape, and has an annular shape as a whole, and its center of gravity O is the center direction of the imaging region. It may be biased to As shown in FIG.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A has a square or square ring shape and is generally annular, and its center of gravity O is in the center direction of the imaging region. It may be biased.
  • each of the high-refractive index layer 200B and the low-refractive index layer 200A has a rectangular shape or a rectangular ring shape as a whole, and its center of gravity O is the center direction of the imaging region. It may be biased to
  • each condensing element is affected by the planar structure of the condensing element, that is, the planar structure of the arrangement of the high refractive index layer 200B and the low refractive index layer 200A.
  • the shape of the refractive index layer 200B is preferably matched to the planar shape (light receiving opening) of the photoelectric conversion unit.
  • the function of converting obliquely incident light into vertical light exists in one direction with respect to the center of gravity O depending on the position where the condensing element is arranged in the imaging region, so that only one of the centers of gravity is used. It can also be.
  • a part of the low-refractive index layer 200A or the high-refractive index layer 200B having a circular ring shape is not formed into a ring shape.
  • a part of the square ring-shaped low-refractive index layer 200A or the high-refractive index layer 200B is not formed into a ring shape. Good.
  • the chief ray is incident obliquely as much as the light condensing element 13-2 arranged at the end of the imaging region, like the light condensing element of the first example.
  • a condensing point by the condensing element 13-2 can be brought to the center of the pixel.
  • FIG. 27 is a schematic plan view for explaining the arrangement state of the condensing element 13-2 of the second example as described above in the solid-state imaging device, and condensing the square or square ring shape shown in FIG. 25C. This is a configuration using elements.
  • the light condensing elements 13-2 individually arranged for all the pixel units 3 provided in the imaging region 4, only representative positions are picked up and enlarged.
  • the condensing element 13-2 arranged at the center of the imaging region 4 has zero asymmetry.
  • the condensing element 13-2 arranged at the end of the imaging region 4 has a structure in which the center of gravity O is greatly shifted toward the center of the imaging region 4 with respect to the center of the element and the asymmetry is strengthened. To do.
  • the solid-state imaging device of FIG. 3 described in the first embodiment is also configured using the condensing element 13-2 of the second example, and the condensing element 13 of FIG. It is the figure to which the circular or circular ring-shaped condensing element 13-2 shown is applied.
  • FIG. 28 is a schematic diagram of a solid-state imaging device (Example structure 2) using the light condensing element of the second example.
  • FIG. 29 is a diagram illustrating a result of wave simulation performed on the solid-state imaging device.
  • the solid-state imaging device shown in FIG. 28 is based on the above-described solid-state imaging device of the comparative structure 4 (see FIG. 16), the optical element 200 is changed to the condensing element 13-2, and other configurations are compared. Similar to Structure 4. That is, the size of the pixel portion (pixel pitch) and the size of each condensing element 13-2 are 1.4 ⁇ m, and the light incident surface side and the exit surface side of the high refractive index layer 200B are optically reflected. An antireflection film 201 is provided to reduce a typical loss.
  • the line widths of the low refractive index layer 200A and the high refractive index layer 200B in the optical element 200 are as illustrated with a minimum line width of 0.1 ⁇ m.
  • the line width of the high refractive index layer 200B is 0.10 ⁇ m, 0.25 ⁇ m, 0.15 ⁇ m, and 0.10 ⁇ m in order from the incident direction of the light H that is obliquely incident.
  • the line width of the low refractive index layer 200A between the high refractive index layers 200B is 0.14 ⁇ m, 0.155 ⁇ m, and 0.195 ⁇ m in order from the incident direction of the light H.
  • the oblique correction function by the incident angle conversion function works effectively.
  • the condensing element 13-2 of the second example can also be used as the condensing element 13 of each of the embodiments described above, similarly to the condensing element of the first example.
  • the light condensing element 13-2 can have only a light condensing function with zero asymmetry. It ’s fine.
  • FIG. 30 is a cross-sectional process diagram for explaining a manufacturing process of the light condensing elements of the first example and the second example used in the solid-state imaging device of the embodiment.
  • FIG. 31 shows a sectional process diagram for explaining a manufacturing process of a normal convex condenser lens.
  • a photoelectric conversion unit is stacked in each pixel unit in the semiconductor layer or above, and reflected as necessary.
  • a prevention film is formed (not shown above).
  • a single material layer 101 serving as a medium for the condensing element is formed on the upper portion with a predetermined film thickness.
  • a resist film 311 is formed on the high refractive index layer 200B.
  • the resist film 311 is patterned by performing lithography processing including pattern exposure and development processing on the resist film 311.
  • the resist film 311 is patterned in accordance with the line width of the high refractive index layer as described in the first and second examples.
  • the high refractive index layer 200B is patterned with a predetermined line width and interval by etching using the patterned resist film 311 as a mask.
  • etching for example, reactive ion etching (RIE) is performed to ensure the anisotropy of the high refractive index layer 200B.
  • RIE reactive ion etching
  • a plurality of high refractive index layers 200B are formed on the single material layer 101 made of silicon oxide (SiO 2 ) with a predetermined interval.
  • the air in the space formed between the high refractive index layers 200B may be the low refractive index layer 200A, and the light collecting element 13-2 of the second example may be completed.
  • silicon oxide for example, silicon oxide (layer) is formed on the upper layer of the single material layer 101 in a state where the space between the high refractive index layers 200B is embedded for flattening.
  • the low refractive index material film 313 between the high refractive index layers 200B is used as the low refractive index layer 200A to complete the light condensing element 13-2 of the second example, and the lower refractive index material film 313 above this is protected. It may be a film.
  • This protective film also serves as a single material layer serving as a medium on the light incident side.
  • the light converging element 13-2 is formed as the first optical element 200, and this low refractive index is described above.
  • a protective film made of the material film 313 is formed with a thin film thickness.
  • the high refractive index layer 200B is formed on the optical element 200 with a predetermined line width and interval.
  • These high refractive index layers 200B are formed in the same procedure as described in A to E in FIG. 30 above.
  • the second optical element 203 may be completed using the air in the space formed between the high refractive index layers 200B as the low refractive index layer 200A.
  • the light collecting element 13-1 of the first example in which the optical element 200 and the optical element 203 are laminated is obtained.
  • the element may be completed.
  • a low refractive index material film is formed.
  • the light condensing element 13-1 of the first example having a laminated structure with the low refractive index material film between the high refractive index layers 200B as the low refractive index layer 200A is completed, and the low refractive index material film above this is completed.
  • the low refractive index layer 200A and the high refractive index layer 200B having predetermined widths that change stepwise can be arranged in a predetermined order depending on the design of the exposure mask at the time of lithography. For this reason, it is easy to produce an asymmetric structure in the in-plane direction, and the range of design is optically widened compared to the case of manufacturing a conventional spherical lens.
  • a manufacturing process of a convex condensing lens as a comparative example will be described with reference to FIG.
  • silicon nitride (SiN) to be the lens medium layer 321 is formed to a predetermined thickness.
  • the predetermined thickness is a little thicker than the final inner lens thickness.
  • a resist film 323 is formed on the lens medium layer 321.
  • the resist film 323 is subjected to lithography processing including pattern exposure and development processing, thereby patterning the resist film 323 in an island shape corresponding to each pixel portion.
  • the resist film 323 patterned in an island shape is reflowed into a lens shape by performing a heat treatment.
  • the lens shape of the resist film 323 is transferred to the underlying lens medium layer 321 by performing etch back from the lens-shaped resist film 323. Further, the resist film 323 is removed by etching.
  • a convex lens 321A is formed on the surface side of the lens medium layer 321.
  • an oxidation layer is formed on the upper layer of the lens medium layer 321 made of silicon nitride (SiN) in a state where the convex lens 321A is embedded for flattening or the like.
  • a convex lens is formed by reflow and etch back.
  • resist reflow which is the basis of the lens shape
  • a spherical shape is created by surface tension, so an asymmetric structure cannot be formed in the plane.
  • the number of processes is large and costs are high.
  • FIG. 32 is a schematic diagram of an optical element serving as a reference example for explaining the configuration of the third example of the light collecting element used in each of the above-described embodiments.
  • 32A is a top view (planar schematic diagram)
  • FIG. 32B is a schematic cross-sectional view in the x direction in the plan view.
  • the optical element 205 shown in these figures also has a condensing function by the distribution of light-transmitting materials having different refractive indexes, and in addition to the wavefront control types of the first and second examples described above, It is characterized in that the structure adopts the diffractive lens effect of the plate.
  • the optical element 205 as such a reference example is a plate-like element in which the low refractive index layers 200A and the high refractive index layers 200B are alternately arranged in the same manner as the wavefront control type optical element described with reference to FIG. It is.
  • a single material layer 100 is provided on the light incident surface side, and a single material layer 101 is provided on the light emission surface side.
  • the thickness of this optical element 205 is 0.5 ⁇ m. Similar to the second example, the optical element 205 has both a condensing function and an oblique incident light correction function, and the second example is that the optical element 205 is set sufficiently thinner than the optical length (lens length). It is the same.
  • the optical element 205 has a left-right asymmetric structure so as to have both a condensing function and an oblique incident light correction function.
  • the arrangement density of the high refractive index layer 200B is higher than the low refractive index layer 200A on the incident side of the light H from the element center CL, and on the opposite side.
  • the arrangement density of the high refractive index layer 200B is lower than that of the low refractive index layer 200A.
  • the width of the low refractive index layer 200A is closer to the incident side of the light H than the centroid of the element in the optical element 205 arranged corresponding to the pixel unit 3. Is small (narrow) and the width of the high refractive index layer 200B is large (wide).
  • the width of the low refractive index layer 200A is set to be large (wide) and the width of the high refractive index layer 200B is set to be small (narrow) on the side opposite to the incident side of the light H from the center of gravity. .
  • the high-refractive index layer 200B is present in a large proportion and the low-refractive index layer 200A is the proportion. It is the same as the state of the second example in that it exists in a small amount, and on the opposite side, the high refractive index layer 200B is small in proportion and the low refractive index layer 200A is large in proportion.
  • a specific configuration of such an optical element 205 is, for example, as follows.
  • the optical element 205 has a size of 1.1 ⁇ m ⁇ 1.1 ⁇ m in the xy direction in accordance with the size of the pixel portion (pixel size), and this size is one period, and the high refractive index layer 200B and the low refractive index.
  • the layers 200A are alternately arranged in the x direction.
  • four lines having the following line widths are arranged in order from the incident direction of the oblique incident light, and the incident direction of the oblique incident light (four as a set) ( Here, they are repeatedly arranged at a pitch of 1.1 ⁇ m in the x direction in the drawing.
  • High refractive index layer 200B 0.25 ⁇ m
  • Low refractive index layer 200A 0.17 ⁇ m
  • High refractive index layer 200B 0.17 ⁇ m
  • Low refractive index layer 200A 0.51 ⁇ m
  • the center CL of the optical element 205 is a position separated by 0.65 ⁇ m in the ⁇ x direction where the light H is incident from the outer side of the high refractive index layer 200B having the largest line width.
  • the length of each low refractive index layer 200A and high refractive index layer 200B that is, the extending length in the direction perpendicular to the incident direction of the light H (here, the y direction in the drawing) is the pixel pitch 1.1. It is assumed that the pixel portion 3 is arranged longitudinally long enough.
  • the incident angle of the oblique incident light is 17 deg (25 deg in air) in the x direction on the xy plane in the optical element 205.
  • oblique incident light H passes through the optical element 205 in the x direction in which the low refractive index layer 200A and the high refractive index layer 200B are arranged in the optical element 205.
  • the oblique correction function works effectively together with the light condensing function in the x direction in which the low refractive index layer 200A and the high refractive index layer 200B are arranged.
  • oblique incident light is incident in the y direction in which the low refractive index layer 200A and the high refractive index layer 200B are extended. Is condensed to a depth of about 1 ⁇ m (z direction) by passing through the optical element 205, but is not condensed in the y direction. Thereby, it can be said that there is no light collecting function in the y direction in which the low refractive index layer 200A and the high refractive index layer 200B are extended.
  • the photoelectric conversion unit is arranged in an isolated island shape near the center of each pixel unit. Therefore, when this optical element 205 is used as a condensing element, light that does not enter the photoelectric conversion unit in the y direction exists, and loss occurs.
  • FIG. 34 is a schematic plan view of a third example of the condensing element (part 1) used in each of the above-described embodiments.
  • the light condensing element (No. 1) of the third example shown in this figure eliminates the point that light is condensed only in one direction in the optical element of the reference example described above.
  • the condensing element 13-3a shown in FIG. 34 is the length of the high refractive index layer 200B provided in the pixel portion 3 so as to extend perpendicularly to the incident direction of the oblique incident light H in the structure of the reference example shown in FIG. In this configuration, the pixel size is equal to or shorter than the pixel size.
  • One high-refractive index layer 200B has a rectangular shape in plan view, a constant line width, and a direction (y direction) perpendicular to the incident direction (x direction) of oblique incident light H.
  • the high refractive index layer 200B has symmetry.
  • the low refractive index layer 200A may be provided in a state of embedding the periphery of the high refractive index layer 200B.
  • the refractive index at the end in the y direction is lower than the center of the pixel unit 3, and the diffractive lens effect of the zone plate functions in the y direction.
  • the light that has not been collected in the y direction is collected at the center in the y direction due to the difference in refractive index.
  • the incident angle of the oblique incident light is 17 deg (25 deg in air) in the x direction of the xy plane in the light condensing element 13-3a.
  • obliquely incident light H is condensed in the x direction in which the low refractive index layer 200A and the high refractive index layer 200B are arranged in the condensing element 13-3a.
  • the obliquely incident light passes through the light condensing element 13-3a, resulting in 0. Condensed to a depth of about 9 ⁇ m (z direction).
  • the oblique incident light is condensed in the xy direction by passing through the condensing element 13-3a.
  • light leakage occurs at the edge of the pixel in the y direction, and a slight loss of light remains.
  • the condensing element 13-3a having the diffractive lens effect of the zone plate in the y direction has a simple configuration in which the low refractive index layer 200A and the high refractive index layer 200B are patterned only by straight lines. However, it turns out that it has diagonal correction with a condensing function.
  • FIG. 36 is a schematic plan view of a light condensing element (No. 2) of the third example used in each of the above-described embodiments.
  • the light condensing element (part 2) of the third example shown in this figure eliminates light leakage generated at the end of the pixel unit 3 in the light condensing element (part 1) of the third example described above. .
  • the mechanism of the condensing element 13-3b shown in FIG. 36 is arranged on the incident side of the oblique incident light H in the element in the structure of the condensing element (part 1: 13-3a) of the third example shown in FIG.
  • the two high-refractive-index layers 200B are connected at the intermediate portion in the longitudinal direction.
  • the additional high refractive index layer 200B 'connecting the two high refractive index layers 200B has, for example, a width of 0.17 ⁇ m in the y direction.
  • the diffractive lens effect of the zone plate in the y direction also functions in the additional high refractive index layer 200B 'portion, and the condensing effect in the y direction is further enhanced.
  • the incident angle of the oblique incident light is 17 deg (25 deg in air equivalent) in the x direction of the xy plane in the condensing element 13-3b.
  • oblique incident light H is condensed in the x direction in which the low refractive index layer 200A and the high refractive index layer 200B are arranged in the light condensing element 13-3b.
  • the oblique correction function works effectively together with the light condensing function in the x direction in which the low refractive index layer 200A and the high refractive index layer 200B are arranged.
  • FIG. 38 is a schematic plan view of a light condensing element (No. 3) of the third example used in each of the above-described embodiments.
  • the light condensing element (part 3) of the third example shown in this figure corresponds to oblique incident light from the oblique direction with respect to the x direction on the xy plane of the pixel unit 3.
  • the mechanism of the condensing element 13-3c shown in FIG. 38 is basically the same as that of the other condensing elements of the third example, and the oblique incident light H in the element is more than the center of the condensing element 13-3c.
  • the high refractive index layer 200B has a high density in the incident direction, and the low refractive index layer 200A and the high refractive index layer 200B are alternately arranged.
  • the four high refractive index layers 200B are arranged obliquely with respect to the incident direction of the oblique incident light H in the light condensing element 13-3c, so that the oblique incidence is made with respect to the center CL of the pixel portion 3.
  • the center of gravity is biased in the light incident direction, and the low refractive index layer 200A is disposed between the high refractive index layers 200B.
  • a series of high refractive index layer patterns are formed by partially overlapping four rectangular high refractive index layers 200B.
  • the four high-refractive-index layers 200B are provided at the respective arrangement locations with different sizes depending on the incident angle and the incident direction of oblique incident light, and the larger the incident angle, the larger the shift amount of the center of gravity from the center of the pixel portion. It is arranged to become. In the illustrated example, it is assumed that oblique incident light is incident at an incident angle of 11.3 deg (16.5 deg. In air) from an angle of 45 ° with respect to the x direction.
  • the refractive index layer 200B is disposed. The space between these four high refractive index layers 200B is buried with a low refractive index layer 200A.
  • the incident angle of the oblique incident light is 45.degree. In the + x + y direction on the xy plane in the light condensing element 13-3c, and the incident angle is 11.3 deg (16.5 deg.).
  • the condensing element 13-3c has a simple configuration in which the low refractive index layer 200A and the high refractive index layer 200B are patterned only by straight lines, but the oblique correction function is effective together with the condensing function. I can see that I am working.
  • FIG. 40 is a schematic plan view of a light condensing element (No. 4) of the third example used in each of the above-described embodiments.
  • the light condensing element (No. 4) of the third example shown in this figure corresponds to the oblique incident light H from the ⁇ y direction on the xy plane of the pixel unit 3.
  • the condensing element 13-3d shown in FIG. 40 is basically the same as the other condensing elements of the third example, and has a high refractive index on the incident side of obliquely incident light with respect to the center of the condensing element 13-3c.
  • the layer 200B has a high density, and the low refractive index layer 200A and the high refractive index layer 200B are alternately arranged.
  • a high refractive index layer 200B extending in the direction perpendicular to the incident direction is arranged so as to be biased toward the incident side of the oblique incident light with respect to the center of the condensing element 13-3c.
  • an additional high refractive index layer 200B ′ is disposed between the two high refractive index layers 200B in order to eliminate light leakage generated at the end of the pixel unit 3. Is connected.
  • the sizes of the high refractive index layers 200B and 200B ′ are provided at the respective positions according to the incident angle of the oblique incident light H.
  • the larger the incident angle the shift amount of the center of gravity from the center of the pixel unit 3. Is arranged to be large. In the illustrated example, it is assumed that oblique incident light is incident at an incident angle of 8.5 deg (12.5 deg in air) from the ⁇ y direction. Is provided.
  • the space between these three high refractive index layers 200B and 200b ' is buried with a low refractive index layer 200A.
  • the incident angle of the oblique incident light H is an incident angle of 8.5 deg (12.5 deg in air) in the y direction in the condensing element 13-3d.
  • the condensing element 13-3d has a simple configuration in which the low refractive index layer 200A and the high refractive index layer 200B are patterned only by straight lines, but the oblique correction function is effective together with the condensing function. I can see that I am working.
  • FIG. 42 is a schematic plan view of an imaging region for explaining the configuration of the solid-state imaging device to which the above-described third example of the condensing element is applied, and picks up the condensing element at a representative position in the imaging region. It is shown enlarged.
  • each condensing element 13-3 is configured to condense light incident on each pixel unit 3 at the center of each pixel unit 3. Accordingly, each condensing element 13-3 is provided in each size and position as in (Part 1) to (Part 4) described above for each arrangement location in the imaging region 4, that is, for each incident direction and incident angle of incident light.
  • a low refractive index layer 200A and a high refractive index layer 200B are provided with a low refractive index layer 200A and a high refractive index layer 200B.
  • the condensing element 13-3b in which the high refractive index layer 200B is arranged to be biased to the right side in the pixel unit 3 is applied to the condensing element 13-3 disposed in this region.
  • Such a bias of the high refractive index layer 200 ⁇ / b> B increases as the pixel unit 3 is located at the end of the imaging region 4.
  • the additional high refractive index layer 200 ⁇ / b> B ′ disposed between the two high refractive index layers 200 ⁇ / b> B becomes smaller as the pixel portion 3 located at the end of the imaging region 4.
  • the condensing element 13-3b in which the high refractive index layer 200B is arranged so as to be biased to the left side is applied to the condensing element 13-3 disposed in this region.
  • Such a bias of the high refractive index layer 200 ⁇ / b> B increases as the pixel unit 3 is located at the end of the imaging region 4.
  • the additional high refractive index layer 200B ′ disposed between the two high refractive index layers 200B becomes smaller as the pixel portion 3 located at the end of the imaging region 4 becomes closer to the center portion of the imaging region 4, and ⁇ Extends in the y direction.
  • the two high-refractive-index layers 200B and the additional high-refractive-index layer 200B ′ disposed between them have the same length in the y direction, and a rectangular high-refractive index.
  • the layer 200B is disposed at the center of the pixel portion 3.
  • the condensing element 13-3d in which the high refractive index layer 200B is arranged so as to be biased downward is applied to the condensing element 13-3 disposed in this region.
  • Such a bias of the high refractive index layer 200 ⁇ / b> B increases as the pixel unit 3 is located at the end of the imaging region 4.
  • the additional high refractive index layer 200B ′ disposed between the two high refractive index layers 200B becomes smaller as the pixel portion 3 located at the end of the imaging region 4 becomes closer to the center portion of the imaging region 4, and ⁇ Extends in the x direction.
  • the two high refractive index layers 200 ⁇ / b> B and the additional high refractive index layer 200 ⁇ / b> B ′ disposed between them have the same length in the x direction, and are rectangular as before.
  • the high refractive index layer 200 ⁇ / b> B is disposed at the center of the pixel unit 3.
  • the condensing element 13-3 arranged in these pixel portions 3 does not need to have an oblique correction function, and only a condensing function is sufficient. Therefore, the center and the center of gravity of the light condensing element 13-3 may coincide with each other, and a high refractive index layer 200B for light condensing may be provided in the center of the light condensing element 13-3.
  • the condensing element 13-3c in which the four high refractive index layers 200B are arranged so as to be biased to the upper right side (+ x, + y side in the drawing) is applied to the condensing element 13-3 disposed in this region. Is done.
  • Such a bias of the high refractive index layer 200 ⁇ / b> B increases as the pixel unit 3 is located at the end of the imaging region 4.
  • the arrangement state of the high refractive index layer 200B in each condensing element 13 includes, for example, pattern information of the four high refractive index layers 200B constituting the reference condensing element 13-3c arranged in this region, and It can be obtained by deforming the four high refractive index layers 200B in a predetermined direction based on the position information of the pixel unit 3.
  • FIG. 43 is a diagram for explaining an example of the design method of the light condensing element 13-3 of the third example as described above, and an example of the design method will be described together with FIG.
  • the design method described with reference to these figures is based on the relationship between the center position of the imaging region 4 and the coordinate position of the pixel unit 3 of interest. This is a method for designing the pattern of the refractive index layer 200B.
  • an X axis and a Y axis for calculation are determined for each pixel unit 3 to which xy coordinates are assigned.
  • the XY origin in each pixel unit 3 is different in each of the first to fourth quadrants.
  • the upper right corner of the pixel unit 3 in the first quadrant, the upper left corner of the pixel unit 3 in the second quadrant, and the pixel in the third quadrant The lower left corner of the unit 3 is the lower right corner of the pixel unit 3 in the fourth quadrant.
  • the procedure in the third quadrant will be described on behalf of the first quadrant to the fourth quadrant.
  • the pixel unit 3 (xa, yb) is located in the lower left side ( ⁇ x, ⁇ y side in the drawing) of the entire imaging region 4.
  • four high-refractive-index layers 200B are imaged in the element as in the third example of the condensing element described with reference to FIG.
  • the regions 4 are arranged so as to be biased toward the center side.
  • the four high-refractive-index layers 200B in the pixel unit 3 are mathematically expressed using the coordinates (vertex coordinates) of the respective vertices.
  • a design formula f1 (xa, yb) that defines the high refractive index layer 200B-1 is defined as the following formula (2) and formula (3).
  • the coefficients s1, s2, s3, s4, s5, s6, s7, s8, c1, c2, c3, and c4 are constants.
  • indicate the absolute values of xa and yb, respectively.
  • the remaining high refractive index layers 200B-2 to 200B-4 disposed in the pixel unit 3 (xa, yb) are also defined by design equations f2 (xa, yb) to f4 (xa, yb). .
  • the high refractive index layers 200B-1 to 200B-4 are defined by design equations f1 (xa, yb) to f4 (xa, yb).
  • the coefficients s1, s2, s3, s4, s5, s6, s7, s8, c1, c2, c3, c4 may be set so that the above design formulas can all be satisfied.
  • the origin and direction of the X and Y coordinates of each pixel unit 3 as described above are determined, so that the design formulas f1 to f4 can be obtained regardless of the quadrant.
  • the positive / negative relationship of the coefficient s is the same in all quadrants.
  • the high refractive index layer 200B arranged on the light condensing element 13 of each pixel unit 3 can be designed as a vertex coordinate pattern.
  • FIG. 44 is a schematic cross-sectional view illustrating the configuration of a fourth example of the light collecting element used in each of the above-described embodiments.
  • the condensing element 13-4 shown in this figure has a condensing function by the distribution of light-transmitting materials having different refractive indexes, and is disposed between the low refractive index layers 200A.
  • the light condensing function and the oblique correction function are obtained by adjusting the stacking position and size of the high refractive index layer 200B.
  • the condensing element 13-4 disposed at the center of the imaging region includes a high refractive index layer 200B that is slightly smaller than the pixel size and a high refractive index layer 200B that is slightly smaller without being biased toward the center of the upper part. It is the laminated structure. Therefore, the condensing element 13-4 disposed in the center of the imaging region has zero asymmetry, and the high refractive index layer 200B is evenly distributed from all directions toward the mechanical center of the condensing element 13-4. The arrangement state of gradually becomes dense.
  • the light H is incident on the condensing element 13-4 disposed at the end of the imaging area obliquely from the center side of the imaging area.
  • the condensing element 13-4 disposed at the end of the imaging region is further turned to the high refractive index layer 200B that is slightly smaller than the pixel size and to a position that is biased toward the center of the upper imaging region.
  • This is an asymmetrical structure in which small high refractive index layers 200B are stacked.
  • the incident angle of obliquely incident light increases toward the end of the imaging region.
  • the condensing element 13-4 arranged at the end of the imaging region has a configuration with higher asymmetry, and the bias toward the center of the imaging region of the high refractive index layer 200B laminated on the upper portion is increased.
  • the principal ray is obliquely incident on the condensing element 13-4 arranged at the end of the imaging region, as in the condensing element of the other examples. It is possible to adopt a configuration in which the light condensing point by the light condensing element 13-4 is brought to the center of the pixel by correcting the above.
  • Embodiment of Electronic Device includes, for example, a camera system such as a digital camera or a video camera, a mobile phone having an imaging function, or other equipment having an imaging function. It can be applied to other electronic devices.
  • a camera system such as a digital camera or a video camera
  • a mobile phone having an imaging function or other equipment having an imaging function. It can be applied to other electronic devices.
  • FIG. 45 shows a configuration diagram of a camera using a solid-state imaging device as an example of an electronic apparatus according to the present technology.
  • the camera according to the present embodiment is an example of a video camera capable of capturing still images or moving images.
  • the camera 91 according to this embodiment includes a solid-state imaging device 1, an optical system 93 that guides incident light to a light receiving sensor unit of the solid-state imaging device 1, a shutter device 94, and a drive circuit 95 that drives the solid-state imaging device 1. And a signal processing circuit 96 that processes an output signal of the solid-state imaging device 1.
  • the optical system (optical lens) 93 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 1.
  • the optical system 93 may be an optical lens system including a plurality of optical lenses.
  • the shutter device 94 controls the light irradiation period and the light shielding period to the solid-state imaging device 1.
  • the drive circuit 95 supplies a drive signal for controlling the transfer operation of the solid-state imaging device 1 and the shutter operation of the shutter device 94. Signal transfer of the solid-state imaging device 1 is performed by a drive signal (timing signal) supplied from the drive circuit 95.
  • the signal processing circuit 96 performs various signal processing.
  • the video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.
  • FIG. 46 is a diagram showing a simulation result of the normalized sensitivity of each color light when the incident angle is changed for the solid-state imaging devices of the example and the comparative example.
  • the solid-state imaging device of the example the solid-state imaging device 1-1 of the first embodiment described with reference to FIG. 2 was adopted.
  • the condensing element 13 the asymmetric condensing element 13-2 of the structure 2 of the embodiment shown in FIG.
  • the normalized sensitivity of the red (R) photoelectric conversion portion 23r provided at the deepest position of the semiconductor layer 21 in the range of incident angles of 0 ° to 25 ° in the + x direction was simulated. The result is indicated by R in FIG.
  • the solid-state imaging device of the comparative example a configuration in which the condensing element 13 in the solid-state imaging device 1-1 of the first embodiment is changed to a normal symmetrical convex lens is adopted.
  • the normalized sensitivity in the range of incident angles of 0 ° to 25 ° in the + x direction was simulated for the photoelectric conversion units 23r, 23b, and 41g of the respective colors. The results are shown as r, g, b in FIG.
  • the normalized sensitivity was simulated in the range of incident angles of 0 ° to 25 ° in the ⁇ x direction. The result is shown as b (-) in FIG.
  • ⁇ 550 nm was set in the green (G) photoelectric conversion portion 41g using a photoelectric conversion film (film thickness: 1.37 ⁇ m).
  • the light absorption in each of the photoelectric conversion units 23r, 23b, and 41g stacked in one pixel unit 3 is sufficiently performed, so that the blue plug region 25b is formed in the same pixel unit 3. It has been confirmed that light leakage into the plug region for green and green is prevented, and further light leakage into the adjacent pixel portion 3 is prevented.
  • FIG. 47 is a diagram showing the results of wave simulation performed on the solid-state imaging devices of the example and the comparative example.
  • 47A shows the result of the example to which the present technology is applied
  • FIG. 47B shows the result of the comparative example.
  • the solid-state imaging device of the example the solid-state imaging device 1-1 of the first embodiment described with reference to FIG. 2 was adopted.
  • the condensing element 13 As the condensing element 13, the asymmetric condensing element 13-2 of the structure 2 of the embodiment shown in FIG.
  • the condensing element 13 in the solid-state imaging device 1-3 combining the pupil correction of the third embodiment described with reference to FIG. 6 is changed to a normal symmetrical convex lens 103. Adopted the configuration.
  • the light H condensed by the convex lens 130 and reaching the semiconductor layer 21 is a red (R) photoelectric. It turns out that it has leaked into the plug region 25b for blue adjacent to the conversion part 23r.
  • the present technology can also have the following configurations.
  • An imaging region in which a plurality of pixel portions are arranged; and A plurality of photoelectric conversion units stacked corresponding to each color in each pixel unit; In each of the pixel units, it is arranged on the light receiving surface side with respect to the photoelectric conversion unit, and asymmetry is increased as the distance from the center of the imaging region increases, the chief ray of oblique incident light with respect to the light receiving surface is made to the light receiving surface.
  • a solid-state imaging device including a plurality of light condensing elements that condense light vertically.
  • Each said condensing element has acquired the said asymmetry by distribution of a light transmissive material.
  • the incident angle ⁇ of the principal ray that has passed through each condensing element is tan ⁇ ⁇ w / (2d, where w is the width of the pixel unit and d is the distance between the condensing element and the deepest part of the photoelectric conversion unit.
  • the solid-state imaging device according to any one of (1) to (3).
  • the imaging region includes a semiconductor layer, The solid-state imaging device according to any one of (1) to (4), wherein the plurality of photoelectric conversion units stacked in the pixel unit are stacked in the semiconductor layer.
  • the imaging region includes a semiconductor layer and a photoelectric conversion film stacked on the semiconductor layer,
  • the plurality of photoelectric conversion units stacked in the pixel unit are a plurality of photoelectric conversion units stacked in the semiconductor layer and a photoelectric conversion unit provided in the photoelectric conversion film. ).
  • Each of the light condensing elements is arranged so that the disposition position with respect to the photoelectric conversion unit stacked in the semiconductor layer is greatly shifted toward the center of the imaging region as the distance from the center of the imaging region increases.
  • the photoelectric conversion unit provided in the photoelectric conversion film has an arrangement position with respect to the photoelectric conversion unit stacked in the semiconductor layer as the distance from the center of the imaging region increases within the range of the deviation width of the light collecting element.
  • An imaging region in which a plurality of pixel portions are arranged; and A plurality of photoelectric conversion units stacked corresponding to each color in each pixel unit;
  • the principal ray of the oblique incident light with respect to the light receiving surface is arranged with respect to the light receiving surface by being arranged on the light receiving surface side with respect to the photoelectric conversion unit and increasing the asymmetry as the distance from the center of the imaging region increases.
  • a plurality of condensing elements that condense light close to the vertical;
  • An electronic apparatus comprising: an optical system that guides incident light to the imaging region.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

La présente invention concerne un dispositif de prise de vue à semi-conducteurs et un dispositif électronique, le dispositif de prise de vue à semi-conducteurs étant apte à empêcher efficacement l'apparition de taches de couleur dans une configuration dans laquelle des unités de conversion photoélectrique, chacune pour une couleur respective, sont stratifiées dans la même unité de pixel. Le dispositif de prise de vue à semi-conducteurs comprend une section de prise de vue (4) dans laquelle une pluralité d'unités de pixel (3) sont agencées, une pluralité d'unités de conversion photoélectrique (23b, 23r, 41g), correspondant chacune à une couleur respective, qui sont stratifiées dans chacune des unités de pixel (3), et une pluralité d'éléments de concentration de lumière (13) qui sont disposés côté face de réception de lumière (A) en regard des unités de conversion photoélectrique (23b, 23r, 41g) dans chaque unité de pixel (3). L'asymétrie des éléments de concentration de lumière (13) croît à mesure que la distance au centre de la section de prise de vue (4) croît, de sorte que chaque élément de concentration de lumière (13) concentre le faisceau de lumière principale de la lumière incidente inclinée entrant par la face de réception de lumière de manière à ce qu'il soit davantage perpendiculaire à la face de réception de lumière.
PCT/JP2012/080259 2011-12-01 2012-11-22 Dispositif de prise de vue à semi-conducteurs et dispositif électronique WO2013080872A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011263631A JP2015028960A (ja) 2011-12-01 2011-12-01 固体撮像装置および電子機器
JP2011-263631 2011-12-01

Publications (1)

Publication Number Publication Date
WO2013080872A1 true WO2013080872A1 (fr) 2013-06-06

Family

ID=48535331

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/080259 WO2013080872A1 (fr) 2011-12-01 2012-11-22 Dispositif de prise de vue à semi-conducteurs et dispositif électronique

Country Status (2)

Country Link
JP (1) JP2015028960A (fr)
WO (1) WO2013080872A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015129168A1 (fr) * 2014-02-28 2015-09-03 パナソニックＩｐマネジメント株式会社 Élément d'imagerie à semi-conducteurs et son procédé de fabrication
WO2015141025A1 (fr) * 2014-03-17 2015-09-24 株式会社 東芝 Élément optique et dispositif de détection de lumière
WO2017047039A1 (fr) * 2015-09-18 2017-03-23 Sony Semiconductor Solutions Corporation Dispositif d'imagerie à semi-conducteur et appareil électronique
WO2023013394A1 (fr) * 2021-08-06 2023-02-09 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie
WO2023167027A1 (fr) * 2022-03-01 2023-09-07 ソニーセミコンダクタソリューションズ株式会社 Dispositif de détection de lumière et appareil électronique

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10644073B2 (en) 2016-12-19 2020-05-05 Samsung Electronics Co., Ltd. Image sensors and electronic devices including the same
WO2019044103A1 (fr) * 2017-08-31 2019-03-07 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, élément d'imagerie stratifié et dispositif d'imagerie à semi-conducteur
US10840284B2 (en) 2017-09-28 2020-11-17 Sony Semiconductor Solutions Corporation Imaging element with a first and second converging portion for converging light between a first and second signal extraction portion of adjacent pixels
JP7346071B2 (ja) * 2019-04-26 2023-09-19 キヤノン株式会社 光電変換装置、撮像システム、および、移動体
JPWO2022079766A1 (fr) * 2020-10-12 2022-04-21
US20240014237A1 (en) * 2020-11-30 2024-01-11 Nippon Telegraph And Telephone Corporation Optical element, image sensor and imaging device
CN116547566A (zh) * 2020-11-30 2023-08-04 日本电信电话株式会社 光学元件、摄像元件以及摄像装置
WO2022113362A1 (fr) * 2020-11-30 2022-06-02 日本電信電話株式会社 Élément optique, élément d'imagerie et dispositif d'imagerie
JP2023024079A (ja) * 2021-08-06 2023-02-16 ソニーグループ株式会社 固体撮像装置
TW202310378A (zh) * 2021-08-06 2023-03-01 日商索尼半導體解決方案公司 光檢測器、光檢測器之製造方法及電子機器
TW202310382A (zh) * 2021-08-06 2023-03-01 日商索尼半導體解決方案公司 光檢測裝置及其製造方法以及電子機器
WO2023021632A1 (fr) * 2021-08-18 2023-02-23 日本電信電話株式会社 Élément optique, élément d'imagerie et dispositif d'imagerie

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213079A (ja) * 1988-02-22 1989-08-25 Sony Corp 固体撮像装置およびビデオカメラ
JPH11340446A (ja) * 1998-05-26 1999-12-10 Nec Corp 固体撮像装置及びその製造方法
JP2003298102A (ja) * 2002-04-05 2003-10-17 Canon Inc 光電変換素子及びそれを用いた固体撮像装置
JP2008258367A (ja) * 2007-04-04 2008-10-23 Matsushita Electric Ind Co Ltd 固体撮像素子、固体撮像装置およびその製造方法
JP2009135236A (ja) * 2007-11-29 2009-06-18 Panasonic Corp 固体撮像素子
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213079A (ja) * 1988-02-22 1989-08-25 Sony Corp 固体撮像装置およびビデオカメラ
JPH11340446A (ja) * 1998-05-26 1999-12-10 Nec Corp 固体撮像装置及びその製造方法
JP2003298102A (ja) * 2002-04-05 2003-10-17 Canon Inc 光電変換素子及びそれを用いた固体撮像装置
JP2008258367A (ja) * 2007-04-04 2008-10-23 Matsushita Electric Ind Co Ltd 固体撮像素子、固体撮像装置およびその製造方法
JP2009135236A (ja) * 2007-11-29 2009-06-18 Panasonic Corp 固体撮像素子
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015129168A1 (fr) * 2014-02-28 2015-09-03 パナソニックＩｐマネジメント株式会社 Élément d'imagerie à semi-conducteurs et son procédé de fabrication
JPWO2015129168A1 (ja) * 2014-02-28 2017-03-30 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
US9754986B2 (en) 2014-02-28 2017-09-05 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device
WO2015141025A1 (fr) * 2014-03-17 2015-09-24 株式会社 東芝 Élément optique et dispositif de détection de lumière
JP2015176044A (ja) * 2014-03-17 2015-10-05 株式会社東芝 光学素子及び光検出装置
US20170075041A1 (en) * 2014-03-17 2017-03-16 Kabushiki Kaisha Toshiba Optical element and photo detection device
US10422930B2 (en) 2014-03-17 2019-09-24 Kabushiki Kaisha Toshiba Optical element and photo detection device
WO2017047039A1 (fr) * 2015-09-18 2017-03-23 Sony Semiconductor Solutions Corporation Dispositif d'imagerie à semi-conducteur et appareil électronique
US10805560B2 (en) 2015-09-18 2020-10-13 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
WO2023013394A1 (fr) * 2021-08-06 2023-02-09 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie
WO2023167027A1 (fr) * 2022-03-01 2023-09-07 ソニーセミコンダクタソリューションズ株式会社 Dispositif de détection de lumière et appareil électronique

Also Published As

Publication number Publication date
JP2015028960A (ja) 2015-02-12

Similar Documents

Publication Publication Date Title
WO2013080872A1 (fr) Dispositif de prise de vue à semi-conducteurs et dispositif électronique
JP5428206B2 (ja) 光学部材、固体撮像装置、製造方法
JP6103301B2 (ja) 固体撮像装置およびその製造方法、並びに電子機器
KR102618068B1 (ko) 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
JP5845856B2 (ja) 固体撮像素子およびその製造方法、並びに電子機器
JPWO2017073321A1 (ja) 固体撮像装置およびその製造方法、並びに電子機器
JP2015153975A (ja) 固体撮像素子、固体撮像素子の製造方法および電子機器
JP2015230355A (ja) 撮像装置および撮像素子
JP2011029379A (ja) 固体撮像装置とその製造方法並びにカメラ
JP2011096732A (ja) 固体撮像装置、固体撮像装置の製造方法、電子機器
JP2009289927A (ja) 固体撮像装置及びその製造方法
US9780132B2 (en) Image sensor and electronic device including the same
JP2006245101A (ja) カラーフィルタを有する撮像装置
US9583522B2 (en) Image sensor and electronic device including the same
JP6600246B2 (ja) 撮像装置及びカメラ
US9071722B2 (en) Solid-state imaging element, imaging device, and signal processing method
JPWO2019215986A1 (ja) 撮像素子および撮像素子の製造方法
JP2014041921A (ja) 固体撮像装置およびその製造方法
US9179114B2 (en) Solid-state image sensor
JPWO2016103365A1 (ja) 固体撮像装置および撮像装置
JP6218687B2 (ja) 固体撮像装置および撮像装置
US9257469B2 (en) Color imaging device
JP5408216B2 (ja) 固体撮像素子の製造方法
JP2010074218A (ja) 固体撮像素子とその製造方法および固体撮像素子を用いた撮像装置
JP5326390B2 (ja) 固体撮像素子およびそれを用いた撮像装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12853769

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12853769

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP