WO2013054876A1 - Cvd装置、該cvd装置を用いたサセプターの製造方法、及びサセプター - Google Patents
Cvd装置、該cvd装置を用いたサセプターの製造方法、及びサセプター Download PDFInfo
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- WO2013054876A1 WO2013054876A1 PCT/JP2012/076423 JP2012076423W WO2013054876A1 WO 2013054876 A1 WO2013054876 A1 WO 2013054876A1 JP 2012076423 W JP2012076423 W JP 2012076423W WO 2013054876 A1 WO2013054876 A1 WO 2013054876A1
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- Prior art keywords
- susceptor
- film
- carbonaceous
- carbonaceous substrate
- masking
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000000873 masking effect Effects 0.000 claims abstract description 67
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- 238000000576 coating method Methods 0.000 claims abstract description 21
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- 238000005755 formation reaction Methods 0.000 description 26
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
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- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- 239000004215 Carbon black (E152) Substances 0.000 description 1
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- 238000009825 accumulation Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
Definitions
- the present invention relates to a CVD apparatus for forming a film of SiC, TaC or the like on the entire surface of a carbonaceous substrate, a susceptor manufacturing method using the CVD apparatus, and a susceptor manufactured using the manufacturing method.
- a susceptor used for semiconductor epitaxial growth is made of a material in which a coating layer such as SiC or TaC is formed on the surface of a carbonaceous substrate.
- a coating layer such as SiC or TaC
- the formation of a SiC film on the surface of a carbonaceous substrate is usually performed directly on the surface of the carbonaceous substrate by thermally decomposing a halogenated organosilicon compound containing a carbon source such as hydrocarbon in a reducing air stream.
- it is necessary to coat the formed SiC film as a very dense and homogeneous layer without pinholes on the entire surface of the carbonaceous substrate.
- the carbonaceous base material 60 is supported sideways (in a laid state) while the carbonaceous base material 60 is supported by the masking member 61.
- a SiC film was formed.
- this method has the following problems. That is, when the film is formed with the carbonaceous base material 60 facing sideways, the SiC film is formed in a state where particles such as dust and peeling pieces exist on the counterbore surface of the carbonaceous base material 60.
- the SiC film is formed using the susceptor in such a state, the particles are affected and the wafer stored in the counterbore moves in the counterbore surface and comes into contact with the side surface of the counterbore part. Chips and cracks occur, and in the worst case, a problem occurs in which the wafer jumps out of the counterbore.
- the carbonaceous base material is suspended on a rotating support rod having a cross-sectional area smaller than the diameter of the through hole of the carbonaceous base material, thereby continuously supporting the carbonaceous base material support contacts.
- the proposal of making it move is made (refer the following patent document 1).
- Such a proposal can solve the above problem.
- the proposal shown in Patent Document 1 can be applied only to a susceptor having a hole, and additionally requires a driving means for operating the rotary support rod, which increases the production cost of the CVD apparatus, A new problem such as an increase in the size of the apparatus arises.
- the CVD apparatus has a structure in which the carbonaceous substrate 51 to which the masking member 55 is attached is supported at three points of the lower support pieces 50a and 50b and the upper support piece 50c. With such a structure, it can be applied to a susceptor having no holes, and driving means for operating the rotary support rod is not necessary, so that the production cost of the CVD apparatus increases, An increase in size can be prevented.
- the present invention provides a CVD apparatus capable of dramatically improving the quality and productivity of a susceptor without causing an increase in production cost or an increase in the size of the apparatus, and a susceptor manufacturing method using the CVD apparatus And to provide a susceptor.
- the present invention provides a CVD apparatus for forming a coating on the surface of a carbonaceous substrate, wherein the carbonaceous substrate has a recess in a part thereof, and an engaged portion is formed in the recess.
- the carbonaceous base material is supported in an upright position by an engagement support means having an engagement portion that engages with the engaged portion, and a recess is formed by introducing gas into the apparatus in this supported state.
- the gist of the invention is that the coating is formed on the surface of the carbonaceous substrate excluding.
- the carbonaceous base material is firmly supported by the engaging support means. Therefore, even when an external force such as vibration is applied, it is possible to prevent the carbonaceous substrate from falling during the film formation.
- a fulcrum trace is not formed in the outer peripheral part of a susceptor, and it can prevent that a crack arises in the outer peripheral part of a susceptor as a result.
- the carbonaceous substrate is supported in an upright posture, it is possible to suppress the accumulation of particles in the counterbore. Therefore, when semiconductor epitaxial growth is performed using a susceptor, it is possible to suppress the occurrence of cracks and cracks in the wafer and the wafer jumping out of the counterbore. In addition, the susceptor can be prevented from warping due to its own weight.
- the amount of warpage is small, the appearance of cracks and color unevenness is suppressed and the appearance is kept good, so the quality of the susceptor can be improved.
- a driving means such as a rotary support scale is not required separately, it is possible to prevent a rise in the production cost of the CVD apparatus and an increase in the size of the CVD apparatus.
- the engaged portion is a female screw portion formed on an inner wall of the concave portion, and the engaging portion is a male screw portion that is screwed into the female screw portion.
- the concave portion is a masking portion, and a female screw portion is formed on an inner wall thereof, and the engagement support means fixes the masking jig having a male screw portion formed on the outer peripheral surface, and the masking jig.
- the male screw part is screwed to the female screw part, and the masking jig is fixed to the film forming jig so that the carbonaceous substrate is supported in an upright posture. It is preferable to be configured as described above.
- the masking recess, the masking jig, and the film forming jig as described above, it is not necessary to provide a dedicated member or mechanism, and the production cost of the CVD apparatus can be reduced and the CVD apparatus can be prevented from being enlarged. .
- two recesses having the engaged portion are formed, and the engagement portion of the engagement support means is engaged with one of the two recesses, Performing a first film forming process for forming a film on the surface of the carbonaceous substrate excluding the recesses, engaging the engagement portion of the engagement support means with the other recess of the two recesses, It is preferable that a second film forming process for forming a film on the surface of the carbonaceous substrate excluding the other recess is performed. According to the said structure, the susceptor without a masking part with improved quality is obtained.
- the present invention is also a susceptor manufacturing method for manufacturing a susceptor by forming a film on the surface of a carbonaceous substrate, the carbonaceous substrate having a recess and an engaged portion formed in the recess, An engagement support means having an engagement portion engageable with the engaged portion, and engaging the engagement portion of the engagement support means with the engaged portion of the carbonaceous substrate.
- the gist of the present invention includes a film forming treatment step of supporting the carbonaceous substrate in an upright posture and forming a film on the surface of the carbonaceous substrate excluding the recesses by introducing gas in the supported state.
- positioned can be produced by one film formation process.
- the carbonaceous base material has two recesses having the engaged portions, and the coating forming process step is arranged such that the engagement support means is provided in one of the two recesses.
- a first film forming process is performed to form a film on the surface of the carbonaceous substrate excluding the one concave portion, and then the other concave portion of the two concave portions is applied. It is preferable to perform a second film forming process for engaging the engagement portion of the engagement support means to form a film on the surface of the carbonaceous substrate excluding the other recess. If it is the said structure, although the film formation process of 2 times is required, the susceptor without the masking part which improved quality can be produced.
- this invention is a susceptor and makes it a summary that the film is formed by one coating.
- the film is formed by one coating.
- this invention is a susceptor and makes it a summary to have a recessed part in a back surface.
- the internal thread part is formed in the inner wall of the said recessed part.
- the inner wall of the said recessed part is a flat surface without an internal thread part.
- FIG. 1 is a perspective view showing an internal structure of a CVD apparatus according to Embodiment 1.
- FIG. FIG. 2 is a plan view showing the internal structure of the CVD apparatus according to the first embodiment.
- the same figure (a) is a perspective view which shows the state which prepared the jig for film formation, a masking jig, and a carbonaceous base material, Fig.
- FIG. (B) is a perspective view showing a state in which the masking jig is screwed into the masking part (concave portion) of the carbonaceous substrate
- Fig. (C) is a diagram showing the screw part of the masking jig in the screw hole of the MOCVD screw.
- the perspective view which shows the state which screwed together.
- the top view of the carbonaceous base material used for the CVD apparatus which concerns on Embodiment 2.
- FIG. The figure which shows the modification of the engagement means of a carbonaceous base material and a masking jig.
- the CVD apparatus of the present invention has a disk-shaped turntable 1 that rotates when a SiC film is formed, and a plurality of film formations are formed near the outer periphery of the turntable 1.
- a jig 2 is arranged. These film forming jigs 2 are preferably arranged so as to be equidistant from the center of the apparatus (center 1a of the turntable 1). This is because the distance from the source gas supply unit differs between the central part and the peripheral part, but if the film forming jig 2 is arranged so as to be equidistant from the center of the apparatus, it is attached to the film forming jig 2.
- Each carbonaceous substrate 10 is also arranged so as to be equidistant from the center of the apparatus. Therefore, the difference in the distance from the raw material gas supply unit due to the arrangement position of the carbonaceous base material 10 is eliminated, so that the amount of warpage can be reduced in any susceptor.
- 10d in FIG. 1 is a counterbore, and the surface on which the counterbore 10d is formed is the main surface of the carbonaceous substrate 10.
- the film forming jig 2 includes a pedestal 3, a support rod 4, a MOCVD cubicle 5, and a MOCVD screw 6, and the support rod 4 is disposed near one end of the pedestal 3. Is fixed.
- a MOCVD cubicle 5 is fixed to the other end of the support bar 4.
- the male screw portion 7a of the masking jig 7 is screwed into the screw hole 6a formed in the inner periphery of the MOCVD screw 6.
- the leading end portion 7b (the right end portion in FIG. 4) of the masking jig 7 is formed in a truncated cone shape.
- a masking portion (concave portion) 20 is disposed at the center of the back surface (left side surface of FIG. 4) of the carbonaceous substrate 10.
- the masking portion 20 is a substantially trapezoidal concave portion, and includes a first hole portion 20a having a circular cross section and a second hole portion 20b having a truncated frustoconical shape in cross section.
- a female screw portion 21 is formed on the inner wall of the first hole portion 20a.
- a male screw portion 7 a of the masking jig 7 is screwed into the female screw portion 21. Thereby, the carbonaceous base material 10 is firmly fixed to the masking jig 7.
- the SiC film is formed in a state where particles such as dust and peeling pieces are present on the counterbore 10d. Can be suppressed. Furthermore, since the male screw portion 7a is screwed to the female screw portion 21, there is no risk of the carbonaceous base material 10 falling off, and the main surface on which the counterbore 10d is formed faces the carbonaceous base material 10 downward. It can also be supported in a desired posture, for example.
- the carbonaceous base material 10 is prepared.
- the leading end portion 7 b of the masking jig 7 is inserted into the masking portion (concave portion) 20, and the male screw portion 7 a is screwed into the female screw portion 21.
- the masking jig 7 is preferably provided at the center of the circle when the carbonaceous substrate 10 has a disk shape. By providing it at the center of the circle, the variation in stress applied to the carbonaceous substrate 10 can be reduced and the susceptor warpage can be reduced.
- the manufacture of a susceptor having a masking portion is described.
- the manufacture of a susceptor without a masking portion is described.
- the carbonaceous substrate 10 used in the CVD apparatus according to the second embodiment has two concave portions 30 and 31 having the same configuration as the masking portion (concave portion) 20 on the back surface. ing.
- the masking jig 7 is screwed into the recess 30 and the masking jig 7 is attached to the film formation jig 2 to support the carbonaceous substrate 10 in an upright posture. In this state, the film formation process is performed. I do.
- a SiC film is formed on the surface excluding the recess 30.
- the masking jig 7 is screwed into the recess 31 and the masking jig 7 is attached to the film forming jig 2 to support the carbonaceous substrate 10 in an upright posture, and the film forming process is performed in this state.
- a second SiC film is formed on the surface excluding the recess 31.
- the film is already formed in the recess 31 by the first SiC film forming process. Therefore, a susceptor in which the SiC film is formed on the entire surface of the carbonaceous substrate 10 is produced by the coating process twice.
- a SiC film can be formed on the surface by flowing a gas into the interior while the carbonaceous substrate 10 is supported in an upright posture. Moreover, since the carbonaceous substrate 10 is supported in a state where it is fixed with screws, the carbonaceous substrate is prevented from falling during the coating formation process as in the above embodiment, and a stable coating can be formed. .
- a dedicated support and fixing jig may be provided separately.
- the SiC film is formed on the surface of the carbonaceous substrate 10 in the above embodiment, the present invention is not limited to the SiC film formation, and is also applied to the formation of a TaC film and other films. be able to.
- the screw means is used as means for fixing the carbonaceous substrate to the masking jig in the above embodiment
- the present invention is not limited to this, and other engagement means may be used.
- the vertical groove 35 and the horizontal groove 36 are formed in the concave portion 20 of the carbonaceous substrate 10
- the protrusion 37 is formed on the outer peripheral surface of the tip of the masking jig 7, and the protrusion 37 Is inserted into the vertical groove 35, and then the masking jig 7 is rotated to place the projection 37 in the horizontal groove 36.
- the carbonaceous base material 10 and the masking jig 7 are engaged, and the carbonaceous base material 10 can be supported in an upright posture.
- FIG. 10A an example of manufacturing a susceptor having a masking portion is shown.
- FIG. 10B a fixing hole 20 ′ provided with an engaged portion 20′a is formed on the back surface of the carbonaceous substrate 10, and this engaged portion 20 is formed.
- the engaging portion 7a of the fixing jig 7 is engaged with 'a.
- a film forming process is performed, and after the SiC film is formed on the surface of the carbonaceous substrate 10, the dotted line portion shown in FIG. 10B is cut by machining, as shown in FIG. 10C.
- the masking part 20 is formed.
- the masking portion 20 is a substantially trapezoidal concave portion having a circular cross section.
- the first hole portion 20c is different from the first hole portion 20a shown in FIG.
- the cross section is comprised from the frusto-conical frustoconical 2nd hole part 20b.
- the threaded portion can be provided at an arbitrary distance within the range of the thickness direction of the susceptor, and the material forming the susceptor is a material having a small cohesive force or the weight of the susceptor. Even if it is large, it can be securely fixed to the fixing jig by screwing.
- the masking portion can be formed without leaving a thread.
- Example 1 A susceptor was produced by forming a film on a disk-shaped carbonaceous substrate having a diameter of 465 mm and a thickness of 16 mm using the CVD apparatus described in the first embodiment.
- the susceptor thus produced is hereinafter referred to as the present invention susceptor A1.
- the experimental conditions film formation conditions
- Pressure in the apparatus 0.1 to 760 Torr Furnace temperature: 1150-1500 ° C
- Introducing gas CH 3 SiCl 3 (methyltrichlorosilane), Hydrogen gas as carrier gas SiC film thickness: 40-60 ⁇ m
- Example 1 A susceptor was produced using the same carbonaceous substrate as in Example 1 by the conventional method shown in FIG. The film formation was performed twice under the same conditions as in Example 1, and the position of the support point was changed after the first film formation, and the film was formed by the support point during the first film formation. A film was formed on the portion where no was formed.
- the susceptor thus produced is hereinafter referred to as a comparative susceptor Z1.
- Table 1 shows the results of examining the situation, appearance, and amount of warpage during the film formation of the susceptor A1 and comparative susceptor Z1 of the present invention.
- the measurement of the amount of warpage is obtained by measuring the amount of warpage of the entire susceptor from the center line in a disk-like plane by measuring the flatness with a three-dimensional measuring machine.
- the present invention is applied to a CVD apparatus for forming a film of SiC, TaC, or the like on the entire surface of a carbonaceous substrate, a susceptor manufacturing method using the CVD apparatus, and a susceptor manufactured using the film forming method. .
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Abstract
Description
即ち、炭素質基材60を横向きで被膜形成を行うと、炭素質基材60のザグリ面にゴミや剥離片等のパーティクルが存在するという状態でSiC被膜が形成されることになる。このような状態となったサセプターを用いてSiC被膜の形成を行うと、パーティクルが影響して、ザグリ内に収納されたウエハがザグリ面内で動き、ザグリ部の側面と接触する結果、ウエハにカケやクラックが発生し、最悪の場合、ウエハがザグリ内から飛び出すといった不具合が生じる。また、膜厚が均一でないことに起因して色むらが生じるという課題も有していた。
更に、炭素質基材が起立姿勢で支持されているので、ザグリ内にパーティクルが溜まるのを抑制することができる。したがって、サセプターを用いて半導体エピタキシャル成長させる際に、ウエハにカケやクラックが発生したり、ウエハがザグリから飛び出したりするのを抑制できる。加えて、炭素質基材の自重によってサセプターに反りが発生するのを抑制できる。
更に、回転支持秤などの駆動手段等を別途必要としないので、CVD装置の生産コストの高騰や、CVD装置の大型化を招来するのを防止できる。
係合手段としてネジを用いることにより、炭素質基材が係合支持手段により強固に固定されるので、炭素質基材の落下防止を完全に防止できる。
上記構成の如く、マスキング用凹部、マスキング冶具及び被膜形成用冶具を利用することにより、専用の部材や機構を設ける必要がなく、CVD装置の生産コストの低減や、CVD装置の大型化を防止できる。
上記構成によれば、品質の向上した、マスキング部のないサセプターが得られる。
上記構成であれば、2回の被膜形成処理が必要であるが、品質の向上したマスキング部がないサセプターを作製することができる。
1回のコーティングにより被膜が形成されていることで、コーティングに係るコストの低減や、複数回コーティングによる色ムラの防止を図ることができる。
本発明において、前記凹部の内壁に雌ネジ部が形成されているのが好ましい。
また、本発明において、前記凹部の内壁は、雌ネジ部のない平坦面であるのが好ましい。
図1及び図2に示すように、本発明のCVD装置は、SiC被膜の形成時に回転する円板状の回転台1を有しており、この回転台1の外周近傍には複数の被膜形成用冶具2が配置されている。これら被膜形成用冶具2は装置の中心(回転台1の中心1a)から等距離となるように配置されることが望ましい。なぜなら、中央部と周辺部とでは原料ガス供給部からの距離が異なるが、被膜形成用冶具2が装置の中心から等距離となるように配置されていれば、被膜形成用冶具2に取り付けられた各炭素質基材10も装置の中心から等距離となるように配置される。したがって、炭素質基材10の配置位置による原料ガス供給部からの距離の差異は解消されるので、何れのサセプターにおいても、そのそり量を低減できるからである。尚、図1における10dはザグリであり、このザグリ10dが形成された面が上記炭素質基材10の主面となっている。
先ず、同図(a)に示すように、被膜形成用冶具2と、マスキング冶具7と、炭素質基材10とを用意した後、同図(b)に示すように、炭素質基材10のマスキング部(凹部)20に、マスキング冶具7の先端部7bを挿入すると共に、雌ネジ部21に雄ネジ部7aを螺合させる。しかる後、同図(c)に示すように、MOCVD用ネジ6のネジ穴6aに、マスキング冶具7の雄ネジ部7aを螺合した後、多数の被膜形成用冶具2を回転台1の外周近傍に配置することにより、被膜形成準備が完了する。
次いで、所定の流量のガスを、所定流速で内部に流入し、これと共に回転台1を回転させる。これにより、マスキング冶具により覆われた部位を除いた炭素質基材の表面にSiC被膜を形成されたサセプターが作製される。なお、必要に応じて、雌ネジ部21は削り取るようにしてもよい。
上記実施の形態1ではマスキング部が配置されたサセプターの作製について説明したけれども、本実施の形態2ではマスキング部のないサセプターの作製について説明する。
本実施の形態2のCVD装置に使用される炭素質基材10は、図6に示すように、裏面に前記マスキング部(凹部)20と同様の構成である2つの凹部30,31が形成されている。
被膜形成処理に際しては、凹部30にマスキング冶具7を螺合させ、マスキング冶具7を被膜形成用冶具2に装着することにより、炭素質基材10を起立姿勢で支持し、この状態で被膜形成処理を行う。これにより、凹部30を除く表面にSiC被膜が形成すされる。 次いで、凹部31にマスキング冶具7を螺合させ、マスキング冶具7を被膜形成用冶具2に装着することにより、炭素質基材10を起立姿勢で支持し、この状態で被膜形成処理を行う。これにより、凹部31を除く表面に2回目のSiC被膜が形成される。但し、凹部31は、1回目のSiC被膜形成処理により既に被膜が形成されている。従って、2回の被膜処理により、炭素質基材10の表面全体にSiC被膜が形成されたサセプターが作製されることになる。
なお、マスキング冶具7及び被膜形成用冶具2に代えて、別途専用の支持固定冶具を設けるようにしてもよい。
(1)上記実施の形態では、炭素質基材10の表面にSiC被膜を形成したけれども、本発明はSiC被膜形成に限定されるものではなく、TaC被膜やその他の被膜の形成にも適用することができる。
[実施例1]
上記発明を実施の形態1で示したCVD装置を用いて、直径465mm、厚さ16mmの円盤状の炭素質基材に被膜を形成してサセプターを作製した。このようにして作製したサセプターを、以下、本発明サセプターA1と称する。尚、実験条件(被膜形成条件)は、以下の通りである。
・実験条件
装置内の圧力:0.1~760Torr
炉内の温度:1150~1500℃
導入ガス:CH3SiCl3(メチルトリクロロシラン)と、
キャリアガスとして水素ガス
SiC被膜の膜厚:40~60μm
図12に示した従来の方法にて、上記実施例1と同様の炭素質基材を用いてサセプターを作製した。被膜形成は実施例1に示された条件にて同一条件で2回行い、1回目の被膜形成後に支持点の位置を変更し、2回目の被膜形成時には1回目の被膜形成時に支持点により被膜が形成されなかった部分に被膜形成が行われるようにした。
このようにして作製したサセプターを、以下、比較サセプターZ1と称する。
上記本発明サセプターA1及び比較サセプターZ1の被膜形成時の状況、外観、反り量について調べたので、その結果を表1に示す。反り量の測定は、三次元測定機による平面度測定により、円盤状の平面における中心線からのサセプター全体の反りの量を測定したものである。
7:マスキング冶具
7b:雄ネジ部
10:炭素質基材
20,30,31:凹部
21:雌ネジ部
Claims (12)
- 炭素質基材の表面に被膜を形成するCVD装置であって、
前記炭素質基材の一部に凹部を有し、該凹部に被係合部が形成されており、該被係合部に係合する係合部を備えた係合支持手段によって前記炭素質基材が起立姿勢で支持され、この支持状態で装置内部にガスを導入することにより凹部を除く炭素質基材の表面に被膜を形成するように構成されていることを特徴とするCVD装置。 - 前記被係合部は前記凹部の内壁に形成された雌ネジ部であり、前記係合部は前記雌ネジ部に螺合する雄ネジ部である、請求項1記載のCVD装置。
- 前記凹部はマスキング部であって、その内壁に雌ネジ部が形成されており、
前記係合支持手段は、外周面に雄ネジ部が形成されたマスキング冶具と、マスキング冶具を固定する被膜形成用冶具とから構成され、
前記雄ネジ部が前記雌ネジ部に螺合され、且つ前記マスキング冶具が被膜形成用冶具に固定されることにより、前記炭素質基材が起立姿勢で支持されるように構成されている請求項2記載のCVD装置。 - 前記被係合部を有する凹部が2個形成されており、
前記2個の凹部のうちの一方の凹部に前記係合支持手段の係合部を係合して、該一方の凹部を除く炭素質基材の表面に被膜を形成する第1の被膜形成処理を行い、前記2個の凹部のうちの他方の凹部に前記係合支持手段の係合部を係合して、該他方の凹部を除く炭素質基材の表面に被膜を形成する第2の被膜形成処理を行うように構成された請求項1記載のCVD装置。 - 炭素質基材の表面に被膜を形成してサセプターを製造するサセプターの製造方法であって、
凹部を有すると共に該凹部に被係合部が形成された炭素質基材と、前記被係合部に係合可能な係合部を備えた係合支持手段とを準備し、
前記炭素質基材の被係合部に前記係合支持手段の係合部を係合して、前記炭素質基材を起立姿勢で支持し、この支持状態でガスを導入することにより炭素質基材の凹部を除く表面に被膜を形成する被膜形成処理工程を含むことを特徴とするサセプターの製造方法。 - 前記炭素質基材は前記被係合部を有する凹部を2個有してあり、
前記被膜形成処理工程が、前記2個の凹部のうちの一方の凹部に前記係合支持手段の係合部を係合して、該一方の凹部を除く炭素質基材の表面に被膜を形成する第1の被膜形成処理を行い、次いで、前記2個の凹部のうちの他方の凹部に前記係合支持手段の係合部を係合して、該他方の凹部を除く炭素質基材の表面に被膜を形成する第2の被膜形成処理を行う工程である請求項5記載のサセプターの製造方法。 - 前記被膜形成処理後に、凹部に形成されている被係合部を削り取る工程を含む請求項5又は6記載のサセプターの製造方法。
- 請求項1~3のCVD装置を用いて、1回のコーティングで被膜が形成されていることを特徴とするサセプター。
- 請求項5の製造方法により、1回のコーティングで被膜が形成されていることを特徴とするサセプター。
- 裏面に凹部を有することを特徴とするサセプター。
- 前記凹部の内壁に雌ネジ部が形成されている請求項10記載のサセプター。
- 前記凹部の内壁は、雌ネジ部のない平坦面である請求項10記載のサセプター。
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KR1020147003181A KR20140074882A (ko) | 2011-10-14 | 2012-10-12 | Cvd 장치, 해당 cvd 장치를 이용한 서스셉터의 제조 방법, 및 서스셉터 |
US14/351,003 US20140245956A1 (en) | 2011-10-14 | 2012-10-12 | Cvd apparatus, method of manufacturing susceptor using the cvd apparatus, and susceptor |
CN201280037085.XA CN103717784A (zh) | 2011-10-14 | 2012-10-12 | Cvd装置、使用了该cvd装置的基座的制造方法、及基座 |
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2012
- 2012-10-12 WO PCT/JP2012/076423 patent/WO2013054876A1/ja active Application Filing
- 2012-10-12 EP EP12840633.7A patent/EP2767612A4/en not_active Withdrawn
- 2012-10-12 JP JP2013538583A patent/JPWO2013054876A1/ja active Pending
- 2012-10-12 KR KR1020147003181A patent/KR20140074882A/ko not_active Application Discontinuation
- 2012-10-12 CN CN201280037085.XA patent/CN103717784A/zh active Pending
- 2012-10-12 US US14/351,003 patent/US20140245956A1/en not_active Abandoned
- 2012-10-12 TW TW101137716A patent/TW201333255A/zh unknown
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JPWO2013054876A1 (ja) | 2015-03-30 |
KR20140074882A (ko) | 2014-06-18 |
TW201333255A (zh) | 2013-08-16 |
CN103717784A (zh) | 2014-04-09 |
US20140245956A1 (en) | 2014-09-04 |
EP2767612A4 (en) | 2015-03-25 |
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