WO2013046534A1 - 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法 - Google Patents
光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法 Download PDFInfo
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- WO2013046534A1 WO2013046534A1 PCT/JP2012/005393 JP2012005393W WO2013046534A1 WO 2013046534 A1 WO2013046534 A1 WO 2013046534A1 JP 2012005393 W JP2012005393 W JP 2012005393W WO 2013046534 A1 WO2013046534 A1 WO 2013046534A1
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- terahertz
- electromagnetic wave
- pulse laser
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000001514 detection method Methods 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 75
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- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 17
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- 238000005516 engineering process Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
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- 238000007689 inspection Methods 0.000 description 6
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/0004—Microscopes specially adapted for specific applications
- G02B21/0016—Technical microscopes, e.g. for inspection or measuring in industrial production processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
Definitions
- the present technology relates to a terahertz radiation microscope using terahertz electromagnetic waves, a photoconductive element and a lens used therefor, and a method of manufacturing the device including a step of observing the device with a terahertz radiation microscope.
- Patent Documents 1, 2, and 3 are methods for inspecting semiconductor devices in a non-contact manner using terahertz electromagnetic waves.
- terahertz electromagnetic waves generated by irradiating a semiconductor device to be inspected with an excitation pulse laser such as an ultrashort pulse laser are affected by electric field distribution and wiring defects inside the semiconductor device.
- the semiconductor device is inspected for defects (for example, Patent Documents 1, 2, and 3).
- a built-in electric field is generated at a pn junction, a metal semiconductor surface, and the like constituting a MOS (Metal Oxide Semiconductor) transistor even under no bias voltage. Therefore, such inspection apparatuses using terahertz electromagnetic waves can inspect defects in a non-biased state, that is, in a non-contact state.
- MOS Metal Oxide Semiconductor
- the pulse laser when a pulse laser for excitation is reflected, scattered, or transmitted by a device, the pulse laser may be irradiated to a detection element that detects a terahertz electromagnetic wave.
- the detection element includes a semiconductor material
- a terahertz electromagnetic wave is also generated from the detection element.
- the power of terahertz electromagnetic waves generated from the device is weak. In such a device, it becomes difficult to separate the terahertz electromagnetic wave generated from the device and the terahertz electromagnetic wave generated from the detection element, and the detection accuracy of the terahertz electromagnetic wave generated from the device is lowered.
- an object of the present technology is to provide a terahertz radiation microscope that can improve the detection accuracy of terahertz electromagnetic waves, a photoconductive element, a lens, and a device manufacturing method used therefor. .
- a photoconductive element includes a base material, an electrode, and a film material.
- the base has an incident surface on which a terahertz electromagnetic wave generated by irradiating a device to be observed with a pulse laser generated from a light source is incident.
- the electrode is formed on the substrate and detects the terahertz electromagnetic wave incident on the incident surface of the substrate.
- the film material is formed on the incident surface of the base material, transmits the terahertz electromagnetic wave, and reflects the pulse laser.
- a film material that transmits the terahertz electromagnetic wave and reflects the pulse laser is formed on the incident surface of the base material, so that the generation of the terahertz electromagnetic wave that occurs when the pulse laser enters the incident surface of the base material is suppressed. Can do. Thereby, the detection accuracy of the terahertz electromagnetic wave generated in the device to be observed can be improved.
- the base material may have a surface different from the surface on which the electrode is formed in the base material as the incident surface.
- a sampling pulse laser for allowing the photoconductive element to detect a terahertz electromagnetic wave at a predetermined timing is incident on the surface of the substrate on which the electrode is formed. Therefore, the detection accuracy of the terahertz electromagnetic wave can be increased by making the terahertz electromagnetic wave incident on a surface different from the surface on which the electrode is formed.
- the film material may include at least one of an insulator film, a semiconductor film, and a conductor film.
- the lens according to the present technology includes a lens region and a film material.
- the lens region has an entrance surface, an exit surface, and an internal region.
- a terahertz electromagnetic wave generated by irradiating a device to be observed with a pulse laser generated from a light source is incident on the incident surface.
- the emission surface emits the terahertz electromagnetic wave incident on the incident surface.
- the internal region guides the terahertz electromagnetic wave between the entrance surface and the exit surface.
- the film surface that transmits the terahertz electromagnetic wave and reflects the pulse laser is formed on the incident surface of the lens region, the generation of the terahertz electromagnetic wave that occurs when the pulse laser is incident on the incident surface can be suppressed. Thereby, the detection accuracy of the terahertz electromagnetic wave generated in the device to be observed can be improved.
- the lens region may have a curved surface portion as the entrance surface and a flat portion as the exit surface.
- the terahertz radiation microscope includes a light source and a detection element.
- the light source generates a pulsed laser.
- the detection element is a detection element that detects a terahertz electromagnetic wave generated by irradiating the device to be observed with the pulse laser, and includes an incident surface and a film material.
- the generated terahertz electromagnetic wave is incident on the incident surface.
- the film material is formed on the incident surface that transmits the terahertz electromagnetic wave and reflects the pulse laser.
- the incident surface of the detection element is formed with a film material that transmits the terahertz electromagnetic wave and reflects the pulse laser, so that the generation of the terahertz electromagnetic wave that occurs when the pulse laser enters the incident surface of the detection element is suppressed. Can do. Thereby, the detection accuracy of the terahertz electromagnetic wave generated in the device to be observed can be improved.
- the light source may generate a terahertz electromagnetic wave having a frequency of 10 10 (Hz) to 10 14 (Hz) by irradiating the device with the pulse laser.
- the light source may generate a pulse laser having a wavelength of 2 ⁇ m or less and a pulse width of 100 ps or less.
- a device manufacturing method is a device manufacturing method including a step of inspecting a defect of a device using a terahertz emission microscope, and includes generating a pulse laser with a light source.
- An incident surface on which a terahertz electromagnetic wave generated by irradiating the pulse laser to the device to be observed is incident; a film material formed on the incident surface that transmits the terahertz electromagnetic wave and reflects the pulse laser;
- the terahertz electromagnetic wave is detected by a detection element having
- this manufacturing method since the detection accuracy of the detection element is improved as described above, this manufacturing method contributes to the improvement of product quality.
- the detection accuracy of terahertz electromagnetic waves can be improved.
- FIG. 1 is a diagram schematically illustrating mainly an optical system of a terahertz emission microscope according to an embodiment of the present technology.
- FIG. 2 is a side view showing the detection element.
- FIG. 3 is a side view showing a detection element according to another embodiment.
- FIG. 4 is a side view showing a detection element according to still another embodiment.
- FIG. 5 is a graph showing a detection signal of a detection element having a lens on which no film material is formed.
- FIG. 6 is a graph illustrating an expected detection signal of the detection element when the detection element according to the present technology is used.
- FIG. 1 is a diagram schematically showing mainly an optical system of a terahertz emission microscope according to an embodiment of the present technology.
- the terahertz emission microscope 100 includes an excitation light source 21, a half mirror 23, a condensing lens 29, an optical delay path 22, a reflection mirror 25, a detection element 30, a pair of parabolic mirrors 27 and 28, a stage 24, and the like.
- the excitation light source 21 is a light source that generates a pulse laser for excitation that excites an observation target arranged on the stage 24, here, a device to be inspected (hereinafter referred to as a target device S).
- a target device S a device to be inspected
- an ultrashort pulse laser having a wavelength of 2 ⁇ m or less and a pulse width of 100 ps or less is used as a pulse laser.
- the half mirror 23 reflects a part of the pulse laser L 1 generated from the excitation light source 21 and guides the reflected light to the condenser lens 29.
- the pulse laser that has passed through the half mirror 23 enters the optical delay path 22.
- the condensing lens 29 guides the reflected light from the half mirror 23 to the target device S on the stage 24.
- the target device S is typically a semiconductor device mainly using a semiconductor material, such as a light emitting device such as a semiconductor laser or a light emitting diode.
- the detection element 30 is an element that detects a terahertz electromagnetic wave (hereinafter referred to as a terahertz wave T) generated in the target device S.
- a terahertz wave T a terahertz electromagnetic wave
- the optical delay path 22 receives the pulse laser beam that has passed through the half mirror 23, and generates a sampling pulse laser L2 for detecting the terahertz wave T at an arbitrary timing by the detection element 30. Further, the optical delay path 22 reflects the generated sampling pulse laser L ⁇ b> 2 by the reflection mirror 25 and makes it incident on the detection element 30.
- the optical delay path 22 variably controls the optical path length of the pulse laser at regular intervals using a moving mechanism (for example, a moving stage) that moves a mirror (not shown). Since the arrival time of the laser pulse at the detection element 30 also changes according to the optical path length, the optical delay path 22 can output the sampling pulse laser L2 at a predetermined timing.
- a moving mechanism for example, a moving stage
- the optical delay path 22 can output the sampling pulse laser L2 at a predetermined timing.
- the pair of parabolic mirrors 27 and 28 are mirrors that guide the terahertz wave T generated in the target device S to the detection element 30.
- a hole 27a is formed in one of the parabolic mirrors 27 and 28, and the pulse laser focused by the condenser lens 29 passes through the hole 27a.
- FIG. 2 is a side view showing the detection element 30.
- the detection element 30 includes a photoconductive element (photoconductive antenna (PCA)) 32 and a lens 31 attached thereto.
- PCA photoconductive antenna
- the photoconductive element 32 has a known structure, and includes, for example, a substrate 34 serving as a base material and an electrode 34 c formed on the substrate 34. These electrodes 34c are spaced apart so as to provide a minute gap between the electrodes 34c, and are disposed so as to form an antenna. Further, a photoconductive film (not shown) is formed on the substrate 34, and photocarriers are generated when the photoconductive film is irradiated with excitation light.
- the substrate 34 is typically made of a GaAs-based semiconductor material, but is not limited to this material.
- the above-described sampling pulse laser L2 is incident on the surface 34b of the substrate 34 on which the electrode 34c is formed, and the surface 34a is different from the surface 34b. In this embodiment, the surface 34a on the lens 31 side, which is the opposite side.
- the terahertz wave T from the target device S enters through the lens 31.
- the lens 31 has, for example, an incident surface (curved surface portion) 31a formed in a curved surface, an exit surface (planar portion) 31b formed in a flat shape, and a terahertz wave T between the entrance surface 31a and the exit surface 31b.
- An internal region 31c for guiding That is, this lens 31 is a convex lens, and typically has a hemispherical shape.
- a lens region is formed by the entrance surface 31a, the internal region 31c, and the exit surface 31b.
- the substrate 34 is attached to the exit surface 31 b of the lens 31. Specifically, the surface 34 a of the substrate 34 is attached to the exit surface 31 b of the lens 31.
- the lens 31 is not limited to a hemispherical shape, and may have a partial hemispherical shape, an aspherical shape, a Fresnel lens shape, or the like. That is, the lens 31 may have any shape as long as the photoconductive element 32 can efficiently detect the terahertz wave T.
- the current flowing between the electrodes 34c changes.
- the terahertz emission microscope 100 when the terahertz wave T is incident between the electrodes 34c on the substrate 34 via the lens 31, the current between the electrodes 34c (or at the timing when the sampling pulse laser L2 is incident on the detection element 30) (or Voltage).
- the terahertz radiation microscope 100 can obtain the amplitude value of the terahertz wave T for each timing as a waveform.
- a film material 33 is formed on the incident surface 31 a of the lens 31.
- This film material 33 transmits the terahertz wave T generated in the target device S, guides it to the incident surface 31a of the lens 31, and reflects the pulse laser L1 reflected, scattered, or transmitted by the target device S. Designed to.
- the photoconductive element 32 is also made of a semiconductor material or a conductive material, and therefore a terahertz wave T is generated due to the photodenver effect or the like.
- the thickness direction of the device is designed to be the same as or close to the direction of the internal electric field of the pn junction of the device.
- the following problems occur. That is, since the direction of the dipole moment that is the source of the terahertz wave is the device thickness direction, most of the terahertz wave emitted from the dipole moment is confined inside the substrate 34 by total reflection. Therefore, terahertz waves radiated from these devices are much smaller than terahertz waves radiated from devices whose dipole moment is parallel to the device surface.
- the detection element 30 is irradiated with the ultrashort pulse laser by disposing a transparent conductive film coating substrate that reflects the terahertz wave and transmits the ultrashort pulse laser in the optical system of the terahertz radiation microscope 100. It is also possible to prevent this. However, since the reflection loss of the ultrashort pulse laser by the transparent conductive film coating substrate occurs, there is a problem that the S / N ratio is lowered when the available laser output is limited.
- the incident surface 31a of the lens 31 is coated with a film material 33, and a pulse laser that causes generation of terahertz waves from the photoconductive element 32 is applied to the film material 33. It is reflected by. As a result, it is possible to improve the detection accuracy of the terahertz wave T generated in the target device S that is originally desired to be detected.
- the film material 33 includes at least one of a dielectric film such as SiO 2 and SiN, a semiconductor film such as Si and GaAs, and a metal film such as Al and Cu. That is, the film material 33 may be either a single layer film or a multilayer film. Of course, the material of the film
- a film forming process such as vapor deposition or sputtering is used.
- the designer performs the simulation of the optical multilayer thin film based on the wavelength of the pulse laser to be reflected and the desired reflectance, and designs the film thickness, the number of films, and the material of the film material 33.
- it is ideal to use all materials as dielectrics.
- the generation amount of the terahertz waves T is small, it is not always necessary. It is not limited to a dielectric. That is, it is only necessary to obtain the S / N ratio of the signal detected by the detection element 30 to such an extent that the terahertz wave T from the target device S that is originally desired to be detected can be detected without any problem.
- the excitation light source 21 generates an ultrashort pulse laser having a wavelength of 2 ⁇ m or less and a pulse width of 100 ps or less.
- the target device S When the target device S is irradiated with this pulse laser, the target device S generates a terahertz wave T having a frequency of, for example, 10 10 (Hz) to 10 14 (Hz).
- a pulse laser when incident on the target device S, free electrons are generated inside the target device S, and the free electrons are accelerated by the internal electric field of the target device S, thereby generating a transient current.
- this transient current causes dipole radiation, a terahertz wave T is radiated.
- the terahertz emission microscope 100 stores information on the terahertz wave detected by the detection element 30 when the target device S is normal, and compares the information with information on the terahertz wave T generated by the target device S at the time of inspection. , It can be inspected for the presence of defects (absence of abnormality). For example, when the internal electric field of the target device S is not normal or when there is a defect in the wiring of the target device S, the terahertz wave T obtained at that time changes from a normal value. For example, since the wiring of the target device S acts as an antenna, if there is a wiring defect, a different terahertz wave T is radiated from the normal time.
- FIG. 3 is a side view showing a detection element according to another embodiment.
- the same members, functions, etc. according to the embodiment shown in FIGS. 1 and 2 will be simplified or omitted, and different points will be mainly described.
- the detection element 130 includes the photoconductive element 132 illustrated in FIG. 2 and does not include the lens 31 illustrated in FIG. Since the lens mainly has a function of detecting the terahertz wave efficiently by condensing or collimating the terahertz wave incident on the photoconductive element, this lens is not essential.
- an incident surface 134a on which the terahertz wave T is incident is formed on the substrate 134 of the photoconductive element 132 on the side opposite to the formation surface 134b of the electrode 134c.
- a film material 133 that transmits the terahertz wave T and reflects the pulse laser is formed on the incident surface 134a.
- the material of the film material 133 can be appropriately selected as described above.
- FIG. 4 is a side view showing a detection element according to still another embodiment.
- the above-described film material 233 that transmits the terahertz wave T and reflects the pulse laser is formed on the emission surface 231 b on the flat surface side of the lens 231. As a result, the pulse laser is reflected by the exit surface 231b of the lens 231.
- FIG. 5 is a graph showing a detection signal of a detection element having a hemispherical lens on which no film material is formed.
- the inventor performed terahertz wave detection using a detection element having a hemispherical lens on which no film material is formed (detection element not having the film material 33 in FIG. 2).
- the measurement was performed under the condition in which terahertz radiation from the target device does not occur by irradiating a laser pulse to a portion where the target device is not mounted in one inspection target product. That is, the graph shown in FIG. 5 shows not a terahertz wave from the target device but a terahertz wave that is substantially generated only by the detection element.
- a titanium sapphire femtosecond laser with a repetition frequency of 80 MHz, a center wavelength of 800 nm, and a pulse width of 100 ⁇ fs was used as the ultrashort pulse laser generated by the excitation light source 21.
- a bow-tie antenna type photoconductive element having sensitivity to electromagnetic waves having a frequency of 0.1 THz to 5 THz was used as a photoconductive element of a detection element in which no film material was formed.
- the detection element 30 on which the film material 33 is formed is used as in the embodiment shown in FIG. 2, for example, the detection element 30 is removed from the inspection target product as shown in FIG. It is expected that almost no terahertz wave will be detected. It is expected that the detection element 30 does not substantially detect the terahertz wave generated by the detection element 30.
- the terahertz wave T generated by the pulse laser of the target device S on the incident side (surface side) is guided to the detection element 30 by the parabolic mirrors 27 and 28. It was equipped with such an optical system. However, the terahertz wave T is generated on the back side of the target device S by the pulse laser incident on the target device S (actually, it is generated in all directions of 360 °). Transparent. Therefore, an optical system including the detection elements 30, 132, or 230 may be disposed on the back side of the target device S.
- a film material may be formed on substantially the entire surface of the lens by combining the forms shown in FIGS.
- the substrate is used as the base material of the photoconductive element 32.
- the base material is not limited to a thin plate-like element such as a substrate, and other arbitrary shapes such as a rectangular parallelepiped, a cube, a prism, a cylinder, and the like. You may have.
- the incident surface on which the terahertz electromagnetic wave is incident is not limited to the surface opposite to the electrode forming surface of the substrate, and may be an arbitrary surface different from the electrode forming surface.
- the present technology can be configured as follows. (1) a base material having an incident surface on which a terahertz electromagnetic wave generated by irradiating a device to be observed with a pulse laser generated from a light source is incident; An electrode for detecting the terahertz electromagnetic wave formed on the substrate and incident on the incident surface of the substrate; A photoconductive element comprising: a film material that is formed on the incident surface of the base material and transmits the terahertz electromagnetic wave and reflects the pulse laser. (2) The photoconductive element according to (1), The said base material is a photoconductive element which has a surface different from the surface in which the said electrode was formed among the said base materials as said incident surface.
- the photoconductive element according to (1) or (2) includes at least one of an insulator film, a semiconductor film, and a conductor film.
- the lens according to (4), The lens region includes a curved surface portion as the incident surface and a flat surface portion as the exit surface.
- a light source that generates a pulsed laser;
- a terahertz radiation microscope comprising: a detection element having a film material formed on the incident surface that reflects light.
- a device manufacturing method including a step of inspecting a device defect using a terahertz emission microscope, A pulse laser is generated by a light source, An incident surface on which a terahertz electromagnetic wave generated by irradiating the pulse laser to the device to be observed is incident; a film material formed on the incident surface that transmits the terahertz electromagnetic wave and reflects the pulse laser; A method for manufacturing a device, wherein the terahertz electromagnetic wave is detected by a detection element having the above.
- Pulse laser L1 DESCRIPTION OF SYMBOLS 21 ... Excitation light source 30, 130, 230 ... Detection element 31,231 ... Lens 31a ... Incident surface 31b, 231b ... Outgoing surface 31c ... Inner area 32, 132 ... Photoconductive element 33, 133, 233 ... Film material 34, 134 ... Substrate 34c, 134c ... Electrode 100 ... Terahertz emission microscope 134a ... Incident surface
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Abstract
Description
前記基材は、光源から発生したパルスレーザーが、観察対象であるデバイスに照射されることにより発生するテラヘルツ電磁波が入射する入射面を有する。
前記電極は、前記基材に形成され、前記基材の入射面に入射された前記テラヘルツ電磁波を検出する。
前記膜材は、前記基材の前記入射面に形成され、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる。
前記レンズ領域は、入射面と、出射面と、内部領域とを有する。前記入射面には、光源から発生したパルスレーザーが、観察対象であるデバイスに照射されることにより発生するテラヘルツ電磁波が入射する。前記出射面は、前記入射面に入射した前記テラヘルツ電磁波を出射する。前記内部領域は、前記入射面及び前記出射面の間で前記テラヘルツ電磁波を導く。
前記光源は、パルスレーザーを発生する。
前記検出素子は、観察対象となるデバイスに前記パルスレーザーが照射されることにより発生するテラヘルツ電磁波を検出する検出素子であって、入射面と、膜材とを有する。前記入射面には、前記発生したテラヘルツ電磁波が入射する。前記膜材は、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる、前記入射面に形成されている。
観察対象であるデバイスに前記パルスレーザーが照射されることにより発生するテラヘルツ電磁波が入射する入射面と、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる、前記入射面に形成された膜材とを有する検出素子により、前記テラヘルツ電磁波が検出される。
図3は、他の実施形態に係る検出素子を示す側面図である。これ以降の説明では、図1及び2に示した実施形態に係る部材や機能等について同様のものは説明を簡略化または省略し、異なる点を中心に説明する。
図4は、さらに別の実施形態に係る検出素子を示す側面図である。この検出素子230では、レンズ231の平面部側である出射面231bに、テラヘルツ波Tを透過し、パルスレーザーを反射する上記した膜材233が形成されている。これにより、レンズ231の出射面231bでパルスレーザーが反射される。
(1)光源から発生したパルスレーザーが、観察対象であるデバイスに照射されることにより発生するテラヘルツ電磁波が入射する入射面を有する基材と、
前記基材に形成され、前記基材の入射面に入射された前記テラヘルツ電磁波を検出するための電極と、
前記基材の前記入射面に形成され、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる膜材と
を具備する光伝導素子。
(2)(1)に記載の光伝導素子であって、
前記基材は、前記基材のうち前記電極が形成された面とは異なる面を、前記入射面として有する
光伝導素子。
(3)(1)または(2)に記載の光伝導素子であって、
前記膜材は、絶縁体膜、半導体膜及び導電体膜のうち少なくとも1つの膜を含む
光伝導素子。
(4)光源から発生したパルスレーザーが、観察対象であるデバイスに照射されることにより発生するテラヘルツ電磁波が入射する入射面と、前記入射面に入射した前記テラヘルツ電磁波を出射する出射面と、前記入射面及び前記出射面の間で前記テラヘルツ電磁波を導く内部領域とを有するレンズ領域と、
前記入射面及び前記出射面のうち少なくとも一方に形成され、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる膜材と
を具備するレンズ。
(5)(4)に記載のレンズであって、
前記レンズ領域は、前記入射面としての曲面部と、前記出射面としての平面部とを有する
レンズ。
(6)パルスレーザーを発生する光源と、
観察対象となるデバイスに前記パルスレーザーが照射されることにより発生するテラヘルツ電磁波を検出する検出素子であって、前記発生したテラヘルツ電磁波が入射する入射面と、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる、前記入射面に形成された膜材とを有する検出素子と
を具備するテラヘルツ放射顕微鏡。
(7)(6)に記載のテラヘルツ放射顕微鏡であって、
前記光源は、前記デバイスに前記パルスレーザーを照射することにより、1010(Hz)~1014(Hz)の周波数を有するテラヘルツ電磁波を発生させる
テラヘルツ放射顕微鏡。
(8)(6)または(7)に記載のテラヘルツ放射顕微鏡であって、
前記光源は、2μm以下の波長及び100ps以下のパルス幅を有するパルスレーザーを発生する
テラヘルツ放射顕微鏡。
(9)テラヘルツ放射顕微鏡を利用してデバイスの欠陥を検査する工程を含むデバイスの製造方法であって、
光源によりパルスレーザーを発生させ、
観察対象であるデバイスに前記パルスレーザーが照射されることにより発生するテラヘルツ電磁波が入射する入射面と、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる、前記入射面に形成された膜材とを有する検出素子により、前記テラヘルツ電磁波を検出させる
デバイスの製造方法。
21…励起光源
30、130、230…検出素子
31、231…レンズ
31a…入射面
31b、231b…出射面
31c…内部領域
32、132…光伝導素子
33、133、233…膜材
34、134…基板
34c、134c…電極
100…テラヘルツ放射顕微鏡
134a…入射面
Claims (9)
- 光源から発生したパルスレーザーが、観察対象であるデバイスに照射されることにより発生するテラヘルツ電磁波が入射する入射面を有する基材と、
前記基材に形成され、前記基材の入射面に入射された前記テラヘルツ電磁波を検出するための電極と、
前記基材の前記入射面に形成され、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる膜材と
を具備する光伝導素子。 - 請求項1に記載の光伝導素子であって、
前記基材は、前記基材のうち前記電極が形成された面とは異なる面を、前記入射面として有する
光伝導素子。 - 請求項1に記載の光伝導素子であって、
前記膜材は、絶縁体膜、半導体膜及び導電体膜のうち少なくとも1つの膜を含む
光伝導素子。 - 光源から発生したパルスレーザーが、観察対象であるデバイスに照射されることにより発生するテラヘルツ電磁波が入射する入射面と、前記入射面に入射した前記テラヘルツ電磁波を出射する出射面と、前記入射面及び前記出射面の間で前記テラヘルツ電磁波を導く内部領域とを有するレンズ領域と、
前記入射面及び前記出射面のうち少なくとも一方に形成され、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる膜材と
を具備するレンズ。 - 請求項4に記載のレンズであって、
前記レンズ領域は、前記入射面としての曲面部と、前記出射面としての平面部とを有する
レンズ。 - パルスレーザーを発生する光源と、
観察対象となるデバイスに前記パルスレーザーが照射されることにより発生するテラヘルツ電磁波を検出する検出素子であって、前記発生したテラヘルツ電磁波が入射する入射面と、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる、前記入射面に形成された膜材とを有する検出素子と
を具備するテラヘルツ放射顕微鏡。 - 請求項6に記載のテラヘルツ放射顕微鏡であって、
前記光源は、前記デバイスに前記パルスレーザーを照射することにより、1010(Hz)~1014(Hz)の周波数を有するテラヘルツ電磁波を発生させる
テラヘルツ放射顕微鏡。 - 請求項6に記載のテラヘルツ放射顕微鏡であって、
前記光源は、2μm以下の波長及び100ps以下のパルス幅を有するパルスレーザーを発生する
テラヘルツ放射顕微鏡。 - テラヘルツ放射顕微鏡を利用してデバイスの欠陥を検査する工程を含むデバイスの製造方法であって、
光源によりパルスレーザーを発生させ、
観察対象であるデバイスに前記パルスレーザーが照射されることにより発生するテラヘルツ電磁波が入射する入射面と、前記テラヘルツ電磁波を透過させ、前記パルスレーザーを反射させる、前記入射面に形成された膜材とを有する検出素子により、前記テラヘルツ電磁波を検出させる
デバイスの製造方法。
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