WO2013035305A1 - Cellule solaire organique - Google Patents

Cellule solaire organique Download PDF

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WO2013035305A1
WO2013035305A1 PCT/JP2012/005595 JP2012005595W WO2013035305A1 WO 2013035305 A1 WO2013035305 A1 WO 2013035305A1 JP 2012005595 W JP2012005595 W JP 2012005595W WO 2013035305 A1 WO2013035305 A1 WO 2013035305A1
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layer
type semiconductor
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organic solar
solar cell
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PCT/JP2012/005595
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Japanese (ja)
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竜志 前田
圭一 安川
池田　秀嗣
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出光興産株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Non-Patent Document 1 uses an n-type organic material having a high carrier transport capability as the photoelectric conversion layer.
  • Non-Patent Document 2 describes the use of a bulk heterojunction structure.
  • Patent Document 1 describes an image pickup element in which a charge barrier layer is inserted, and describes a photoelectric conversion element and an image pickup element that can reduce dark current by suppressing the outflow of carriers. Yes.
  • Patent Document 1 is an invention related to an image sensor, and there is no mention of an organic thin film solar cell. Moreover, although it aims at reducing a dark current, this is a concept different from the conversion efficiency improvement of an organic thin-film solar cell. Furthermore, the total thickness of the electron barrier layer is 20 nm or more, and when there are a plurality of electron barrier layers, the thickness of the electron barrier layer adjacent to the photoelectric conversion layer is 10 nm or more. Therefore, the range is different from the effective film thickness region for the charge barrier layer of the present invention.
  • organic solar cells have been improved as described above, there is a problem that energy conversion efficiency is lower than that of currently used silicon (single crystal silicon, polycrystalline silicon, amorphous silicon) devices. It hasn't arrived.
  • the objective of this invention is providing the organic solar cell which has a highly efficient photoelectric conversion characteristic.
  • the present inventors provided a layer that efficiently transports holes and electrons to the anode and the cathode, respectively, preventing the movement of holes and preventing the movement of electrons.
  • the present inventors have found that the conversion efficiency is improved by using the element configuration, and the present invention has been completed. Specifically, as a result of analysis, the following may be related as factors of the effect of hole blocking.
  • An organic solar battery including a first electrode, an active layer including a plurality of organic layers, and a second electrode in this order, wherein the active layer is one of the following (A) and (B).
  • A a p-type semiconductor layer, an i-layer that is a mixed layer of a p-type semiconductor material and an n-type semiconductor material, a hole barrier layer having a thickness that prevents hole movement and does not hinder electron movement, and an n-type semiconductor Active layer (B), p-type semiconductor layer, n-type semiconductor layer (I), layered in order of layers, hole-blocking layer with a thickness that prevents hole movement and does not hinder electron movement, n-type semiconductor 1.
  • the ionization potential of the compound contained in the hole barrier layer is 0.01 eV to 1... From the ionization potential of the n-type semiconductor material contained in the i layer or the ionization potential of the compound contained in the n-type semiconductor layer (I).
  • the electron mobility of the compound contained in the hole blocking layer is larger than the electron mobility of the n-type semiconductor material contained in the i layer or the compound contained in the n-type semiconductor layer (I). 4.
  • the organic solar cell according to any one of items 1 to 3. 5.
  • the thickness of the hole blocking layer in (A) is 0.1 to 19 nm. 7).
  • the hole is transported to the cathode side (recombination deactivation factor) is blocked and suppressed.
  • An organic solar cell having photoelectric conversion characteristics can be provided.
  • the organic solar cell (organic thin film solar cell) of the present invention includes a first electrode, an active layer including a plurality of organic layers, and a second electrode in this order, and the active layer is any one of (A) and (B) below. It is.
  • the cell structure of the organic solar battery of the present invention is not particularly limited as long as it has the above-described configuration, and specifically includes a structure having the following configuration on a substrate.
  • a buffer layer between an electrode and an organic layer may be provided as needed.
  • a structure having the following configuration can be given. (11) 1st electrode / p layer / i layer / hole blocking layer / n layer / buffer layer / second electrode (12) 1st electrode / buffer layer / p layer / i layer / hole blocking layer / n layer / Second electrode (13) first electrode / buffer layer / p layer / i layer / hole blocking layer / n layer / buffer layer / second electrode
  • a well-known electroconductive material can be used.
  • a metal such as tin-doped indium oxide (ITO) or gold (Au)
  • an electrode (cathode) connected to the n layer silver (Ag)
  • Metals such as aluminum (Al), indium (In), calcium (Ca), platinum (Pt) lithium (Li)
  • binary metal systems such as Mg: Ag, Mg: In, and Al: Li are used.
  • a work function smaller than that of the anode is used.
  • an electrode exemplified material connected to the p layer can be used.
  • the material used for the p-layer is not particularly limited, but a compound having a function as a hole acceptor is preferable.
  • a compound having a function as a hole acceptor is preferable.
  • organic compounds N, N′-bis (3-tolyl) -N, N′-diphenylbenzidine (mTPD), N, N′-dinaphthyl-N, N′-diphenylbenzidine (NPD), 4, Amine compounds typified by 4 ′, 4 ′′ -tris (phenyl-3-tolylamino) triphenylamine (MTDATA), phthalocyanine (Pc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), titanyl phthalocyanine (TiOPc) ), Phthalocyanines such as octaethylporphyrin (OEP), platinum octaethylporphyrin (PtOEP), zinc tetrapheny
  • R 0 is hydrogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted aryl having 6 to 30 ring carbon atoms, substituted or unsubstituted carbon atoms having 2 to 30 carbon atoms.
  • the substituted or unsubstituted alkyl having 1 to 20 carbon atoms of R 0 preferably has 1 to 8 carbon atoms in the alkyl moiety, and the alkyl moiety may be linear, branched or cyclic, for example Methyl group, ethyl group, 1-propyl group, 2-propyl group, 1-butyl group, 2-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, octyl group, decyl group, dodecyl group 2-ethylhexyl group, 3,7-dimethyloctyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, 1-adamantyl group, 2-adamantyl group, norbornyl group, trifluoromethyl group, trichloromethyl group, benzyl group, ⁇ , ⁇ -dimethylbenzy
  • Examples of the substituent of the alkyl group include a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and an aryl group such as a phenyl group, and the aryl group includes a methyl group, an ethyl group, a propyl group and the like. And may be further substituted with an alkyl group having 1 to 5 carbon atoms.
  • substituent for the aryl group examples include a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, an alkyl group having 1 to 5 carbon atoms such as a methyl group, an ethyl group, and a propyl group, a methoxy group, and an ethoxy group.
  • a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom
  • an alkyl group having 1 to 5 carbon atoms such as a methyl group, an ethyl group, and a propyl group, a methoxy group, and an ethoxy group.
  • an alkoxy group having 1 to 5 carbon atoms such as a propoxy group, an aryl group such as a cyano group and a phenyl group, an aryl group such as a phenyl group, a heterocyclic ring such as carbazole, an arylamino group such as a diphenylamino group, and the like.
  • Examples of the substituted or unsubstituted aryl having 6 to 30 ring carbon atoms of Rg 3 and Rg 4 include divalent residues corresponding to the above substituted or unsubstituted aryl having 6 to 30 ring carbon atoms of R 0. Can be mentioned.
  • the substituted or unsubstituted alkenyl having 2 to 30 carbon atoms of R 0 preferably has 2 to 8 carbon atoms in the alkenyl moiety and may be linear, branched or cyclic, such as a vinyl group, Propenyl, butenyl, oleyl, eicosapentaenyl, docosahexaenyl, styryl, 2,2-diphenylvinyl, 1,2,2-triphenylvinyl, 2-phenyl-2-propenyl Etc.
  • an alkenyl group having 2 to 20 carbon atoms is preferable, and a vinyl group, a styryl group, and a 2,2-diphenylvinyl group are more preferable from the viewpoint of availability of raw materials.
  • substituent for the alkenyl group examples include a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, an aryl group such as a phenyl group, a carbon group of 1 to 5 such as a methyl group, an ethyl group and a propyl group.
  • halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom
  • an aryl group such as a phenyl group
  • a carbon group of 1 to 5 such as a methyl group, an ethyl group and a propyl group.
  • alkyl group examples include a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, an aryl group such as a phenyl group, a carbon group of 1 to 5
  • Examples of the substituent of the 5-membered or 6-membered heterocyclic ring having at least one nitrogen atom of Rg 1 and Rg 2 include a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, a phenyl group, and the like. An aryl group is mentioned.
  • adjacent ones may combine to form a ring, but when the substituent of Rg 1 or Rg 2 that is pyrrole forms a ring and becomes isoindole Absent.
  • R 0 may be bonded to Rg 1 or Rg 2 , the substituent of Rg 1 may be bonded to Rg 3, and the substituent of Rg 2 may be bonded to Rg 4 .
  • the hydrogen atom includes isotopes having different numbers of neutrons, that is, light hydrogen (protium), deuterium (deuterium), and tritium (tritium).
  • the compound represented by the formula (A) is preferably a pyromethene boron chelate compound represented by the following formula (B).
  • R 1 to R 12 are each hydrogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted ring forming carbon atoms having 6 to 6 carbon atoms; 30 aryl, substituted or unsubstituted alkenyl having 2 to 30 carbon atoms, substituted or unsubstituted arylamino having 6 to 30 carbon atoms, halogen, or substituted or unsubstituted heterocyclic ring having 5 to 40 carbon atoms
  • Adjacent groups of R 1 to R 12 may be bonded to each other to form a ring. However, the case where R 1 and R 2 and R 11 and R 12 are bonded to form isoindole is not included.
  • At least one of R 1 , R 2 , R 11 and R 12 is preferably aryl having 6 to 30 ring carbon atoms, and more preferably a phenyl group.
  • at least one of R 4 , R 5 , R 8 and R 9 is preferably an arylamino group having 6 to 40 ring carbon atoms, and more preferably a diphenylamino group.
  • R 3 and R 4 , or R 4 and R 5 may be linked to form a ring condensed with the benzene ring to which they are bonded (for example, a benzene ring).
  • R 8 and R 9 , or R 9 And R 10 may be linked to form a ring (benzene ring) that is condensed with a benzene ring to which these are bonded.
  • the compound represented by the formula (A) is preferably a pyromethene boron chelate compound represented by the following formula (C).
  • R 0 is the same as the above formula (A)
  • R 13 to R 16 are each hydrogen, substituted or unsubstituted alkyl having 1 to 20 carbon atoms, substituted or unsubstituted aryl having 6 to 30 ring carbon atoms, substituted or unsubstituted alkenyl having 2 to 30 carbon atoms, Substituted or unsubstituted arylamino having 6 to 30 ring carbon atoms, halogen, or substituted or unsubstituted heterocyclic ring having 5 to 40 ring atoms, and adjacent groups among R 13 to R 16 are bonded to each other.
  • n-type Semiconductor Layer The material used for the n-layer is not particularly limited, but a compound having a function as an electron acceptor is preferable.
  • organic compounds include fullerenes such as C 60 and C 70 and derivatives thereof, carbon nanotubes, perylene derivatives, polycyclic quinones, quinacridones, and CN-poly (phenylene -Vinylene), MEH-CN-PPV, -CN group or CF 3 group-containing polymers, their -CF 3 substituted polymers, poly (fluorene) derivatives, and the like.
  • a material having high electron mobility is preferable.
  • a material having a small electron affinity is preferable.
  • a high open-circuit voltage can be realized by combining materials having a low electron affinity as the n layer.
  • the i layer is a layer in which the p-type semiconductor material and the n-type semiconductor material are mixed.
  • the i-type p-type semiconductor material and the p-layer material may be the same or different, and the i-type n-type semiconductor material and the n-layer material may be the same or different.
  • the ratio of the p-type semiconductor material and the n-type semiconductor material in the i layer is, for example, 10: 1 to 1:10 (volume ratio).
  • the n-type semiconductor material used for the i layer is preferably C70 or a derivative thereof.
  • the hole blocking layer (hole blocking layer (a)) of the active layer (A) preferably contains a compound having a larger Ip (ionization potential) than the n-type semiconductor material used for the i layer. , The holes generated in the i layer are prevented from moving to the cathode side.
  • Ip forms a thin film of a target compound on an ITO glass substrate by vacuum deposition, and uses a thin film on the ITO glass substrate with a photoelectron spectrometer (manufactured by Riken Keiki Co., Ltd .: AC-3) in the atmosphere. Can be measured. Specifically, it can be measured by irradiating the material with light and measuring the amount of electrons generated by charge separation at that time. The emitted photoelectrons are plotted by the 1/2 power with respect to the energy of the irradiation light, and the threshold value of the photoelectron emission energy is Ip.
  • the compound of the hole blocking layer (a) preferably has a higher electron mobility than the n-type semiconductor material contained in the i layer.
  • the electron mobility of the compound of the hole blocking layer (a) is preferably 1 ⁇ 10 ⁇ 5 cm 2 / Vs or more, more preferably 1 ⁇ 10 ⁇ 4 cm 2 / Vs or more.
  • C60 As the compound of the hole blocking layer (b), C60 or a derivative thereof is preferable.
  • the thickness of the hole barrier layer (b) is a thickness that prevents the movement of holes and does not prevent the movement of electrons.
  • the term “thickness that prevents the movement of holes and does not hinder the movement of electrons” herein refers to a thin film that prevents the movement of holes generated at the interface between the p layer and the n layer (I) to the cathode side. This is a thickness that is not too thick, and is not too thick so as not to prevent electrons generated at the interface between the p layer and the n layer (I) from moving to the cathode side.
  • Buffer layer In general, organic thin film solar cells often have a thin total film thickness, and therefore, the upper electrode and the lower electrode are short-circuited, and the yield of cell fabrication often decreases. In such a case, it is preferable to prevent this by laminating a buffer layer.
  • each layer other than the hole barrier layer and the n layer (I) is not particularly limited, but is set to an appropriate film thickness. Since it is generally known that the exciton diffusion length of an organic thin film is short, if the film thickness is too thick, the exciton is deactivated before reaching the heterointerface, resulting in low photoelectric conversion efficiency. If the film thickness is too thin, pinholes and the like are generated, so that sufficient diode characteristics cannot be obtained, resulting in a decrease in conversion efficiency.
  • the normal film thickness is suitably in the range of 1 nm to 10 ⁇ m, but more preferably in the range of 5 nm to 0.2 ⁇ m.
  • an appropriate resin or additive may be used for improving the film formability and preventing pinholes in the film.
  • Usable resins include polystyrene, polycarbonate, polyarylate, polyester, polyamide, polyurethane, polysulfone, polymethyl methacrylate, polymethyl acrylate, cellulose and other insulating resins and copolymers thereof, poly-N-vinyl. Examples thereof include photoconductive resins such as carbazole and polysilane, and conductive resins such as polythiophene and polypyrrole.
  • the additive include an antioxidant, an ultraviolet absorber, and a plasticizer.
  • C 70 is deposited at 1 ⁇ / s by resistance heating deposition to form an n layer (n layer (I)) 30 having a thickness of 10 nm, and C 60 is deposited at 1 ⁇ ⁇ ⁇ by resistance heating deposition.
  • a hole blocking layer 40 having a thickness of 3 nm is formed, and C 70 is further formed thereon by resistance heating vapor deposition at 1 ⁇ / s to form an n layer (n layer (II )) 50 was formed.
  • bathocuproine (BCP) was formed into a 10 nm buffer layer 60 by resistance heating vapor deposition at 1 ⁇ / s.
  • metal Al was continuously deposited as a counter electrode 70 with a film thickness of 80 nm to produce the organic thin film solar cell 1.
  • the element area was 1.0 cm 2 .
  • Example 7 An organic solar cell was prepared and evaluated in the same manner as in Example 4 except that the thickness of the hole blocking layer was 10 nm. The results are shown in Table 2.
  • Comparative Example 4 An organic solar cell was prepared and evaluated in the same manner as in Example 4 except that the hole blocking layer was not provided. The results are shown in Table 2.
  • Comparative Example 5 An organic solar cell was prepared and evaluated in the same manner as in Example 4 except that the thickness of the hole blocking layer was 20 nm. The results are shown in Table 2. In Comparative Example 5, since the hole barrier layer was too thick, the movement of electrons to the cathode was hindered and the conversion efficiency was lowered.

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Abstract

La présente invention porte sur une cellule solaire organique, qui comprend, dans cet ordre, une première électrode, une couche active, comprenant une pluralité de couches organiques, et une seconde électrode, ladite couche active étant (A) ou (B), définies comme suit : (A) une couche active formée par stratification, dans cet ordre, d'une couche de semi-conducteur de type p, d'une couche i qui est une couche mélangée composée d'une matière semi-conductrice de type p et d'une matière semi-conductrice de type n, d'une couche de barrière aux trous ayant une épaisseur qui empêche un transfert de trous mais ne bloque pas un transfert d'électrons, et d'une couche semi-conductrice de type n ; et (B) une couche active formée par stratification, dans cet ordre, d'une couche semi-conductrice de type p, d'une couche semi-conductrice de type n (I), d'une couche de barrière aux trous ayant une épaisseur qui empêche un transfert de trous mais ne bloque pas un transfert d'électrons, et d'une couche semi-conductrice de type n (II).
PCT/JP2012/005595 2011-09-09 2012-09-04 Cellule solaire organique WO2013035305A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
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WO2014073278A1 (fr) * 2012-11-06 2014-05-15 ソニー株式会社 Élément de conversion photoélectrique, dispositif d'imagerie à semi-conducteurs et dispositif électronique
KR20150086199A (ko) * 2014-01-17 2015-07-27 주식회사 엘지화학 유기 태양 전지 및 이의 제조방법
JP2017525151A (ja) * 2014-07-18 2017-08-31 ユニバーシティ オブ サザン カリフォルニア 高いガラス転移温度の材料を用いた励起子阻止電荷キャリアフィルタを含む安定した有機感光性デバイス
KR20190077303A (ko) * 2016-10-28 2019-07-03 닛뽄 가야쿠 가부시키가이샤 디벤조피로메텐붕소킬레이트 화합물, 근적외광 흡수 재료, 박막 및 유기 일렉트로닉스 디바이스

Families Citing this family (1)

* Cited by examiner, † Cited by third party
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WO2019031456A1 (fr) * 2017-08-10 2019-02-14 日本化薬株式会社 Composé chélate de bore de dibenzopyrrométhène, matériau absorbant la lumière proche infrarouge, couche mince et dispositif électronique organique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165516A (ja) * 2002-11-14 2004-06-10 Matsushita Electric Works Ltd 有機太陽電池
WO2010038406A1 (fr) * 2008-09-30 2010-04-08 新日本石油株式会社 Cellule solaire tandem
JP2010183060A (ja) * 2008-10-15 2010-08-19 Fujifilm Corp 光電変換素子及び撮像素子
WO2010120393A2 (fr) * 2009-01-12 2010-10-21 The Regents Of The University Of Michigan Amélioration de la tension de circuit ouvert de cellules photovoltaïques organiques utilisant des couches de blocage d'excitons bloquant les électrons/trous
WO2010134432A1 (fr) * 2009-05-22 2010-11-25 コニカミノルタホールディングス株式会社 Élément de conversion photoélectrique organique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165516A (ja) * 2002-11-14 2004-06-10 Matsushita Electric Works Ltd 有機太陽電池
WO2010038406A1 (fr) * 2008-09-30 2010-04-08 新日本石油株式会社 Cellule solaire tandem
JP2010183060A (ja) * 2008-10-15 2010-08-19 Fujifilm Corp 光電変換素子及び撮像素子
WO2010120393A2 (fr) * 2009-01-12 2010-10-21 The Regents Of The University Of Michigan Amélioration de la tension de circuit ouvert de cellules photovoltaïques organiques utilisant des couches de blocage d'excitons bloquant les électrons/trous
WO2010134432A1 (fr) * 2009-05-22 2010-11-25 コニカミノルタホールディングス株式会社 Élément de conversion photoélectrique organique

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073278A1 (fr) * 2012-11-06 2014-05-15 ソニー株式会社 Élément de conversion photoélectrique, dispositif d'imagerie à semi-conducteurs et dispositif électronique
US9520449B2 (en) 2012-11-06 2016-12-13 Sony Corporation Photoelectric conversion device, solid-state image pickup unit, and electronic apparatuses having work function adjustment layers and diffusion suppression layers
KR20150086199A (ko) * 2014-01-17 2015-07-27 주식회사 엘지화학 유기 태양 전지 및 이의 제조방법
KR101691713B1 (ko) * 2014-01-17 2016-12-30 주식회사 엘지화학 유기 태양 전지 및 이의 제조방법
JP2017525151A (ja) * 2014-07-18 2017-08-31 ユニバーシティ オブ サザン カリフォルニア 高いガラス転移温度の材料を用いた励起子阻止電荷キャリアフィルタを含む安定した有機感光性デバイス
KR20190077303A (ko) * 2016-10-28 2019-07-03 닛뽄 가야쿠 가부시키가이샤 디벤조피로메텐붕소킬레이트 화합물, 근적외광 흡수 재료, 박막 및 유기 일렉트로닉스 디바이스
KR102386678B1 (ko) 2016-10-28 2022-04-13 닛뽄 가야쿠 가부시키가이샤 디벤조피로메텐붕소킬레이트 화합물, 근적외광 흡수 재료, 박막 및 유기 일렉트로닉스 디바이스

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