WO2013009026A3 - 웨이퍼결함 평가방법 - Google Patents

웨이퍼결함 평가방법 Download PDF

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Publication number
WO2013009026A3
WO2013009026A3 PCT/KR2012/005287 KR2012005287W WO2013009026A3 WO 2013009026 A3 WO2013009026 A3 WO 2013009026A3 KR 2012005287 W KR2012005287 W KR 2012005287W WO 2013009026 A3 WO2013009026 A3 WO 2013009026A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer defects
evaluating
evaluating wafer
wafer
wafer sample
Prior art date
Application number
PCT/KR2012/005287
Other languages
English (en)
French (fr)
Other versions
WO2013009026A2 (ko
Inventor
함호찬
Original Assignee
엘지실트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지실트론 주식회사 filed Critical 엘지실트론 주식회사
Priority to JP2014520114A priority Critical patent/JP2014523139A/ja
Priority to US14/129,026 priority patent/US9500694B2/en
Priority to DE112012002891.0T priority patent/DE112012002891T5/de
Priority to CN201280033980.4A priority patent/CN103650125B/zh
Publication of WO2013009026A2 publication Critical patent/WO2013009026A2/ko
Publication of WO2013009026A3 publication Critical patent/WO2013009026A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1218—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing using optical methods; using charged particle, e.g. electron, beams or X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 실시예의 웨이퍼결함 평가방법은, 웨이퍼 샘플을 준비하는 단계; 상기 웨이퍼 샘플 상에 산화막을 형성하는 단계; 표면 광전압으로 소수 캐리어의 확산거리를 측정하는 단계; 및 오염정도의 결과를 판정하는 단계;를 포함한다.
PCT/KR2012/005287 2011-07-08 2012-07-03 웨이퍼결함 평가방법 WO2013009026A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014520114A JP2014523139A (ja) 2011-07-08 2012-07-03 ウェハーの欠陥評価方法
US14/129,026 US9500694B2 (en) 2011-07-08 2012-07-03 Method for evaluating wafer defects
DE112012002891.0T DE112012002891T5 (de) 2011-07-08 2012-07-03 Verfahren zur Bewertung von Defekten in einem Wafer
CN201280033980.4A CN103650125B (zh) 2011-07-08 2012-07-03 评估晶片缺陷的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110067746A KR101246493B1 (ko) 2011-07-08 2011-07-08 웨이퍼의 결함 평가방법
KR10-2011-0067746 2011-07-08

Publications (2)

Publication Number Publication Date
WO2013009026A2 WO2013009026A2 (ko) 2013-01-17
WO2013009026A3 true WO2013009026A3 (ko) 2013-03-14

Family

ID=47506657

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005287 WO2013009026A2 (ko) 2011-07-08 2012-07-03 웨이퍼결함 평가방법

Country Status (6)

Country Link
US (1) US9500694B2 (ko)
JP (1) JP2014523139A (ko)
KR (1) KR101246493B1 (ko)
CN (1) CN103650125B (ko)
DE (1) DE112012002891T5 (ko)
WO (1) WO2013009026A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015186288A1 (ja) * 2014-06-02 2015-12-10 株式会社Sumco シリコンウェーハおよびその製造方法
JP2017183471A (ja) * 2016-03-30 2017-10-05 信越半導体株式会社 点欠陥領域の評価方法
JP6569613B2 (ja) * 2016-07-11 2019-09-04 株式会社Sumco シリコンウェーハの評価方法及び製造方法
KR102037748B1 (ko) * 2017-12-06 2019-11-29 에스케이실트론 주식회사 웨이퍼의 결함 영역을 평가하는 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883828A (ja) * 1994-09-09 1996-03-26 Mitsubishi Materials Corp 半導体ウェーハの内部欠陥の測定方法およびこれを用いた熱酸化炉の管理方法
JPH11297779A (ja) * 1998-04-10 1999-10-29 Sony Corp 半導体装置の欠陥検出方法およびその製造方法
KR20020051346A (ko) * 2000-12-22 2002-06-29 이 창 세 단결정 실리콘 웨이퍼 검사 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422508A (en) 1992-09-21 1995-06-06 Siliconix Incorporated BiCDMOS structure
JPH08191091A (ja) * 1995-01-10 1996-07-23 Komatsu Electron Metals Co Ltd シリコンウェーハの酸化膜耐圧強度の簡便評価法
JP2977784B2 (ja) * 1997-07-09 1999-11-15 川崎重工業株式会社 廃プラスチックガス化・灰溶融を利用する発電方法
JP3933010B2 (ja) * 2002-08-23 2007-06-20 株式会社Ｓｕｍｃｏ シリコン単結晶インゴットの点欠陥分布を測定する方法
JP2004235592A (ja) * 2003-02-03 2004-08-19 Toshiba Ceramics Co Ltd エピタキシャルウエハの少数キャリア拡散長の測定方法
JP4743010B2 (ja) 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法
JP4940737B2 (ja) 2006-04-11 2012-05-30 株式会社Ｓｕｍｃｏ 少数キャリア拡散長測定方法およびシリコンウェーハの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883828A (ja) * 1994-09-09 1996-03-26 Mitsubishi Materials Corp 半導体ウェーハの内部欠陥の測定方法およびこれを用いた熱酸化炉の管理方法
JPH11297779A (ja) * 1998-04-10 1999-10-29 Sony Corp 半導体装置の欠陥検出方法およびその製造方法
KR20020051346A (ko) * 2000-12-22 2002-06-29 이 창 세 단결정 실리콘 웨이퍼 검사 방법

Also Published As

Publication number Publication date
JP2014523139A (ja) 2014-09-08
US9500694B2 (en) 2016-11-22
DE112012002891T5 (de) 2014-04-03
CN103650125B (zh) 2016-09-28
CN103650125A (zh) 2014-03-19
KR20130005988A (ko) 2013-01-16
US20140125374A1 (en) 2014-05-08
KR101246493B1 (ko) 2013-04-01
WO2013009026A2 (ko) 2013-01-17

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