WO2012169588A1 - Gaz pour génération de plasma, procédé de génération de plasma et plasma à pression atmosphérique ainsi généré - Google Patents

Gaz pour génération de plasma, procédé de génération de plasma et plasma à pression atmosphérique ainsi généré Download PDF

Info

Publication number
WO2012169588A1
WO2012169588A1 PCT/JP2012/064687 JP2012064687W WO2012169588A1 WO 2012169588 A1 WO2012169588 A1 WO 2012169588A1 JP 2012064687 W JP2012064687 W JP 2012064687W WO 2012169588 A1 WO2012169588 A1 WO 2012169588A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
plasma
atmospheric pressure
generation
treatment effect
Prior art date
Application number
PCT/JP2012/064687
Other languages
English (en)
Japanese (ja)
Inventor
沖野　晃俊
秀一 宮原
良太 佐々木
Original Assignee
国立大学法人 東京工業大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国立大学法人 東京工業大学 filed Critical 国立大学法人 東京工業大学
Publication of WO2012169588A1 publication Critical patent/WO2012169588A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2240/00—Testing
    • H05H2240/10—Testing at atmospheric pressure

Definitions

  • the present invention makes it possible to easily generate a plasma that is difficult to be converted to a plasma under atmospheric pressure, and a plasma generation gas and a plasma generation method for use in various plasma processing (hereinafter referred to as plasma processing).
  • plasma processing a plasma generation gas and a plasma generation method for use in various plasma processing
  • the present invention relates to an atmospheric pressure plasma generated by using this generation method.
  • the plasma generating gas capable of stably generating plasma under atmospheric pressure is limited to only a small part of gas such as helium and argon.
  • gas such as helium and argon.
  • oxygen gas, carbon dioxide gas, nitrogen oxide gas, and the like have high chemical activity when plasma is used, and a good treatment effect can be obtained.
  • Carbon dioxide gas has been used as a gas for extinguishing plasma because it has been particularly difficult to stably generate plasma at atmospheric pressure. Even if such a gas forcibly generates plasma, only plasma with a low concentration can be generated, and it takes a long time for plasma processing, so that it is difficult to put it into practical use. For this reason, it is an object to easily obtain such a plasma that is difficult to be converted into plasma.
  • the present invention for example, a plasma generating gas and a plasma generating capable of easily generating a plasma of a gas that is difficult to be converted into a plasma such as oxygen gas, carbon dioxide gas, and nitrogen oxide gas. It is an object of the present invention to provide a method and an atmospheric pressure plasma generated thereby, and to realize application of plasma processing to many industrial fields using the obtained atmospheric pressure plasma.
  • Another object of the present invention is to improve mass productivity by enabling desired processing at high speed using plasma.
  • a first plasma generating gas is a plasma generating gas used for generating atmospheric pressure plasma, has a processing capability by becoming plasma, and has the above-mentioned plasma. It is characterized by being a mixed gas of a base gas (carrier gas) for transporting the entire generation gas to a plasma source and a treatment effect improving gas for improving the treatment effect of the atmospheric pressure plasma.
  • a base gas carrier gas
  • a plasma having a high processing effect can be obtained.
  • the processing effect improving gas can be obtained.
  • various surface treatments can be efficiently performed.
  • desired processing can be performed at high speed, and mass productivity can be improved.
  • the second plasma generating gas of the present invention uses the atmospheric pressure plasma as a treatment effect improving gas when the surface layer is removed by cleaning or hydrophilizing or etching the surface of the metal material. It is characterized by using at least one selected from gas, carbon dioxide gas, water vapor and nitrogen oxide gas.
  • the treatment effect on the surface of the metal material can be improved, and the practical use of the plasma treatment in the industrial field is realized. can do.
  • the third plasma generating gas of the present invention uses the atmospheric pressure plasma, and when the surface layer is removed by cleaning or hydrophilizing or etching the surface of the polymer material, It is characterized by using at least one selected from carbon dioxide gas, water vapor and nitrogen oxide gas.
  • the treatment effect on the surface of the polymer material can be improved, and the plasma treatment in the industrial field can be put to practical use. Can be realized.
  • the fourth plasma generating gas according to the present invention is characterized in that the mixed gas is further mixed with a generation auxiliary gas for assisting in the formation of plasma.
  • the fifth plasma generation gas of the present invention is characterized in that the generation auxiliary gas is helium gas.
  • the plasma generation gas can be easily converted to plasma even when a gas that is difficult to be converted into plasma is used as the treatment effect improving gas. It is possible to do.
  • the plasma generation method of the present invention is characterized in that plasma is generated by applying an electric field at atmospheric pressure to the plasma generation gas according to any one of the first to fifth aspects.
  • the atmospheric pressure plasma of the present invention is generated by the plasma generation method of the present invention.
  • atmospheric pressure plasma of the present invention by appropriately selecting the treatment effect improving gas in the plasma generating gas according to the purpose of the surface treatment and the kind and characteristics of the object to be treated, Since a wide variety of surface treatments can be performed, it can be applied to various industrial fields.
  • the present invention it is possible to obtain a plasma having a high processing effect as compared with the plasma used in the conventional plasma processing, and it is possible to easily generate a plasma even in a gas that is difficult to be converted into a plasma , Enabling application to various industrial fields.
  • the treatment effect improving gas by mixing the treatment effect improving gas, it is possible to appropriately select the treatment effect improving gas according to the desired surface treatment and the characteristics of the object to be processed and to provide the optimum plasma treatment. .
  • Schematic showing a plasma generation apparatus used in the plasma generation method of the present invention Schematic showing an embodiment of plasma processing using atmospheric pressure plasma of the present invention
  • Graph showing the relationship between the contact rate and the contact angle of water droplets Addition of processing effect improvement gas when hydrophilization is performed using atmospheric pressure plasma generated by plasma generation gas with base gas (carrier gas) as helium gas and processing effect improvement gas as oxygen gas or carbon dioxide gas
  • Graph showing the relationship between the contact rate and the contact angle of water droplets Graph showing the amount of helium gas added as a production auxiliary gas to the base gas and the plasma generation start voltage when the treatment effect improving gas is oxygen gas
  • the plasma generating gas of the present invention is a gas for generating plasma by being introduced into a plasma source and applying an electric field.
  • the first embodiment of the plasma generating gas of the present invention is generated with a base gas (carrier gas) for carrying the entire plasma generating gas to a plasma source while having processing capability by becoming plasma. It is a mixed gas with a treatment effect improving gas for improving the plasma treatment effect.
  • the base gas at least one gas selected from helium gas, neon gas, argon gas, krypton gas, xenon gas, nitrogen gas, and air that can be easily converted into plasma can be used.
  • the treatment effect improving gas it is possible to select and use at least one selected from gases capable of obtaining a very active plasma such as carbon dioxide, water vapor, oxygen gas, hydrogen gas, nitrogen oxide gas.
  • a processing effect improving gas is appropriately selected according to the desired surface treatment and the characteristics of the object to be processed, and an optimum plasma treatment is provided. Is possible.
  • a generation auxiliary gas for assisting the plasma generation of the plasma generating gas is further mixed with the mixed gas in the first embodiment. Has been.
  • helium gas or argon gas can be used as the production auxiliary gas.
  • the plasma generating gas of the second embodiment As described above, it is possible to easily generate plasma even when, for example, a gas that is difficult to be converted into plasma is used as the processing effect improving gas.
  • a metal material when used as an object to be processed, at least one selected from oxygen gas, carbon dioxide gas, water vapor and nitrogen oxide gas is used as the treatment effect improving gas.
  • oxygen gas oxygen gas
  • carbon dioxide gas carbon dioxide gas
  • water vapor and nitrogen oxide gas is used as the treatment effect improving gas.
  • the surface of the object to be processed can be effectively cleaned, hydrophilized, and the surface layer can be removed by etching.
  • a polymer material when used as an object to be processed, it is preferable to select and use at least one of carbon dioxide, water vapor, and nitrogen oxide gas as the treatment effect improving gas.
  • the plasma generating gas used the surface of the object to be processed can be effectively cleaned, hydrophilized, and the surface layer removed by etching.
  • metal materials such as copper, iron, stainless steel and aluminum, polyimide films described later, resin-based materials such as high-density polyethylene, fiber-based materials, organic-based materials
  • resin-based materials such as high-density polyethylene
  • fiber-based materials such as fiber-based materials
  • organic-based materials A polymer material such as can be used.
  • treatment using the plasma generated by the plasma generating gas of the present invention surface cleaning treatment, hydrophilization treatment, water repellency treatment, sterilization treatment, coating treatment and the like can be performed.
  • atmospheric pressure plasma is generated by applying a direct current, an alternating current, or a high frequency electric field to the plasma generation gas of the present invention under atmospheric pressure.
  • Plasma generation may be performed by any method as long as it can generate plasma, and discharge, laser, radiation, ultraviolet rays, shock waves, and the like can be used.
  • the plasma generation apparatus for generating atmospheric pressure plasma of the present invention will be described in detail with reference to FIG.
  • the plasma generator mainly uses arc discharge, and a jet type plasma generator in which the shape of plasma to be injected is a jet type or a line type in which an injection port for injecting plasma using glow discharge is a line type.
  • a plasma generator or a plasma generator using corona discharge can be used.
  • the examples are particularly described using a jet type plasma generation apparatus.
  • a jet type plasma generating apparatus 1 includes a plasma source 2 that generates plasma by applying an electric field to plasma by discharging to a plasma generating gas, and a power source 3 that applies a voltage to the plasma source 2. And a gas supply unit 4 for supplying a plasma generating gas to the plasma source 2.
  • the plasma source 2 includes an outer electrode 6 in which an injection port 6 a for injecting plasma is formed, and a housing 5 and an inner electrode 7 accommodated in the outer electrode 6.
  • the housing 5 is formed with a gas inlet 5a for introducing a plasma generating gas.
  • DC As the power from the power source 3, DC, pulse wave, high frequency, or the like may be used instead of AC voltage.
  • a plasma generation method using the plasma generation apparatus 1 will be described.
  • the plasma generating gas introduced from the gas supply unit 4 to the gas introduction port 5 a of the plasma source 2 is supplied to the discharge unit 8, and is supplied from the power source 3 between the outer electrode 6 and the inner electrode 7.
  • the AC voltage By applying the AC voltage, a uniform discharge is generated in a direction extending radially from the central portion of the spherical portion of the inner electrode 7. And it jets out as jet-shaped plasma from the jet nozzle 6a.
  • FIG. 2 shows a state in which plasma treatment is performed on an object to be processed using a plasma processing apparatus in this example.
  • the plasma processing apparatus 10 is horizontally moved at a constant speed by a motor or the like, and a transfer table 11 that enables a workpiece W placed thereon to be transferred in a transfer direction A (left direction in FIG. 2), and above that
  • the plasma generating apparatus 1 is fixedly arranged so as to face the injection ports 6a for jetting plasma.
  • a jet type plasma generation apparatus 1 as shown in FIG. 1 is used, and is fixed at a position where the distance from the surface of the workpiece W placed on the transfer table 11 is about 3 mm. Arranged.
  • the gas flow rate of the plasma generating gas supplied to the plasma generating apparatus 1 was 5 L / min, and the voltage supplied between the electrodes from the power source was a high frequency voltage of about 5 kV at a frequency of 50 Hz to 50 kHz.
  • the plasma processing apparatus 10 transports the workpiece W in the transport direction A at a predetermined transport speed in a state where the workpiece W is placed on the transport table 11, and Plasma treatment is performed by ejecting plasma from the ejection port 6a and irradiating the surface of the workpiece W with plasma.
  • Plasma treatment was performed using argon gas, helium gas, oxygen gas, nitrogen gas, carbon dioxide gas or air as the plasma generating gas. At this time, the measurement is performed while changing the conveyance speed of the workpiece W from 0 to 300 mm / sec, and the contact angle of the workpiece W after the plasma irradiation is measured.
  • FIG. 1 A schematic diagram of a plasma treatment chamber.
  • plasma generated using nitrogen gas and carbon dioxide gas as plasma generating gas is generally generated using argon gas, helium gas, oxygen gas and air used as plasma generating gas. It can be seen that the effect of hydrophilization treatment is higher than that.
  • Examples 1 to 3 relate to processing effects when plasma processing is performed using a plasma generating gas composed of a mixed gas of a base gas (carrier gas) and a processing effect improving gas. It explains using.
  • Plasma treatment is performed on the workpiece W by plasma generated from plasma generation gas using argon gas or helium gas as a base gas (carrier gas) and oxygen gas or carbon dioxide gas as a processing effect improving gas, respectively.
  • argon gas or helium gas as a base gas (carrier gas)
  • oxygen gas or carbon dioxide gas as a processing effect improving gas
  • the polyimide film was used and the plasma process was performed on the conditions of the conveyance speed of 100 mm / sec.
  • the contact angle rapidly decreases until the addition rate reaches 1% when the base gas (carrier gas) is argon gas.
  • the addition rate increased from 1%, the contact angle gradually decreased with an increase in the addition rate, and the contact angle became the smallest when the addition rate was 90%.
  • the contact angle rapidly decreases until the addition rate reaches 1%, and the addition rate is 10%, which is the minimum. It became a contact angle.
  • the addition rate increased more than that, the contact angle gradually increased with the increase in the addition rate.
  • the base gas (carrier gas) or the processing is performed by using the plasma generating gas in which the base gas (carrier gas) and the processing effect improving gas are mixed. It is possible to achieve a higher processing effect than plasma generated from a single gas of the effect improving gas.
  • Example 2 When a copper plate is used as the workpiece W and the plasma treatment is performed using any one of carbon dioxide gas, nitrogen oxide gas, water vapor and oxygen gas as the treatment effect improvement gas, the addition rate of the treatment effect improvement gas and the amount of water droplets Table 1 shows the measurement results of the contact angle.
  • the values in the table are the values of the contact angle when the addition rate is 0% in the graph of the treatment effect improving gas addition rate and the contact angle as shown in FIG. It shows the addition rate and the value of the contact angle when it becomes smaller.
  • base gas helium gas, argon gas, nitrogen gas and air were used for measurement.
  • the contact angle becomes the smallest at an addition rate of 10%, and when nitrogen oxide gas is used, the contact rate becomes the highest at an addition rate of 15%.
  • the contact angle was the smallest at an addition rate of 5%, and when oxygen gas was used, the contact angle was the smallest at an addition rate of 10%.
  • the contact angle which was 69.9 ° when the addition rate is 0%, decreases to 29.7 ° when the addition rate is 10%.
  • the contact angle was reduced by 57.5% by the addition.
  • the contact angle becomes the smallest when the addition rate is 10%, and when the nitrogen oxide gas is used, the addition rate is 10%.
  • the contact angle was the smallest, with water vapor, the contact angle was the smallest at an addition rate of 20%, and when oxygen gas was used, the contact angle was the smallest at an addition rate of 20%.
  • the effect was particularly recognized when oxygen gas was added at a rate of addition of 20% as the treatment effect improving gas, and the contact angle was reduced by about 30%.
  • the contact angle becomes the smallest when the addition rate is 1%, and when the nitrogen oxide gas is used, the addition rate is 10%.
  • the contact angle was the smallest, when water vapor was used, the contact angle became the smallest when the addition rate was 5%, and when oxygen gas was used, no effect was observed.
  • the treatment effect improving gas in which the effect was recognized was a mixture of carbon dioxide gas at an addition rate of 1%, and the contact angle was reduced by 22.3%.
  • the contact angle becomes the smallest when the addition rate is 0.4%, and when the nitrogen oxide gas is used, the addition rate is 0.
  • the contact angle was the smallest at 0.1%, the contact angle was the smallest at an addition rate of 10% for water vapor, and the contact angle was the smallest at an addition rate of 10% for oxygen gas.
  • the treatment effect improving gas in which the effect was recognized was a mixture of oxygen gas at an addition rate of 10%, and the contact angle was reduced by about 40%.
  • the workpiece W is a metal material such as a copper plate, for example, a plasma generating gas in which any of carbon dioxide, nitrogen oxide gas, water vapor, or oxygen gas is added as a treatment effect improving gas is used. It was revealed that a good hydrophilic effect can be obtained by performing the plasma treatment used.
  • the treatment effect improving gas when a metal material is used as the workpiece W, it is preferable to use any one of carbon dioxide gas, nitrogen oxide gas, water vapor, or oxygen gas as the treatment effect improving gas, and particularly as the base gas (carrier gas). Most preferably, helium gas is used and plasma treatment is performed with a plasma generation gas using carbon dioxide gas as the treatment effect improving gas.
  • Example 3 When a polyimide film is used as the workpiece W and the plasma treatment is performed using any one of carbon dioxide gas, nitrogen oxide gas and water vapor as the treatment effect improving gas, the addition rate of the treatment effect improving gas and the contact angle of the water droplets The measurement results are shown in Table 2.
  • the values in the table are the values of the contact angle when the addition rate is 0% in the graph of the treatment effect improving gas addition rate and the contact angle as shown in FIG. It shows the addition rate and the value of the contact angle when it becomes smaller.
  • base gas helium gas, argon gas, nitrogen gas and air were used for measurement.
  • the contact angle becomes the smallest when the addition rate is 10%, and the contact becomes the highest when the addition rate is 9% when nitrogen oxide gas is used. The angle became smaller, and when water vapor was used, the contact angle became smaller with a slight addition amount.
  • carbon dioxide as a treatment effect improving gas
  • the contact angle of 46.0 ° at an addition rate of 0% becomes 8.7 ° at an addition rate of 10%, and the contact angle is 81.1%. It has become smaller.
  • the contact angle becomes the smallest when the addition rate is 90%, and when the nitrogen oxide gas is used, the addition rate is 6%. In the case of water vapor, the contact angle became the smallest with a slight addition amount.
  • the contact angle becomes the smallest when the addition rate is 100%, and when the nitrogen oxide gas is used, the addition rate is 6%.
  • the contact angle became the smallest, and when water vapor was used, the contact angle became small with a slight addition amount.
  • the contact angle becomes the smallest when the addition rate is 100%, and when the nitrogen oxide gas is used, the addition rate is 100%.
  • the contact angle was the smallest, and when water vapor was used, the contact angle was the smallest at an addition rate of 60%.
  • the object to be processed W is a polymer material such as a polyimide film
  • plasma irradiation using a plasma generating gas to which carbon dioxide gas, nitrogen oxide gas or water vapor is added as a treatment effect improving gas is performed. It was revealed that a good hydrophilic effect can be obtained by performing the treatment.
  • the treatment effect improving gas when a polymer material is used as the workpiece W, it is preferable to use carbon dioxide, nitrogen oxide gas, or water vapor as the treatment effect improving gas, and in particular, argon gas is used as the base gas (carrier gas).
  • the plasma treatment is most preferably performed with a plasma generation gas using carbon dioxide gas as the treatment effect improving gas.
  • Example 4 The mixed gas of base gas (carrier gas) and treatment effect improving gas is mixed with helium gas as a production auxiliary gas, the mixing ratio of helium gas is changed, and the result of measuring the applied voltage at which plasma starts to be generated is shown. It is shown in FIG. 6 and FIG.
  • the total flow rate is 5 L / min, of which 0.15 L / min is the hydrogen gas as the treatment effect improving gas, and 4.85 L / min is the base gas (carrier gas).
  • the experiment was conducted as a mixture in which the mixing amount of helium gas as a production auxiliary gas was changed. In both experiments, the jet plasma generator 1 was used, and the applied voltage was gradually increased to record the applied voltage when plasma generation started.
  • the plasma generation start voltage decreases in proportion to the increase in the gas concentration of the helium gas, and the plasma generation start voltage is about 14 by the addition of 20% helium gas. % Was also low.
  • the plasma generation start voltage is lowered by using the plasma generation gas mixed with the generation auxiliary gas. Therefore, when oxygen gas or hydrogen gas that is difficult to be converted into plasma is used as the treatment effect improving gas. However, it has become clear that a stable plasma can be easily generated.
  • a gas of a substance different from the gas used for the generation auxiliary gas is selected as the base gas (carrier gas) and the processing effect improving gas. preferable.
  • the plasma generating gas of the present invention by using a mixed gas of the base gas (carrier gas) and the treatment effect improving gas, compared with the conventional plasma, Since plasma having a high processing effect can be obtained, plasma processing can be performed on an object to be processed at high speed, and mass productivity can be improved.
  • a gas that is difficult to be converted into a plasma as a processing effect improving gas is obtained by simply mixing the auxiliary gas for generation in the mixed gas of the first embodiment. Even when selected, plasma can be easily generated.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

[Problème] La présente invention concerne un gaz pour génération de plasma qui peut facilement générer un plasma à partir d'un gaz ne formant pas facilement un plasma tel que l'oxygène, le monoxyde de carbone ou l'oxyde nitrique, ainsi qu'un procédé de génération de plasma et un plasma à pression atmosphérique ainsi généré. L'invention a en outre pour objet de permettre l'application d'un traitement par plasma dans de nombreux domaines industriels en utilisant le plasma à pression atmosphérique résultant. [Solution] L'invention concerne un gaz pour génération de plasma utilisé afin de générer un plasma à pression atmosphérique. Le gaz pour génération de plasma est un gaz mixte comportant un gaz de base (gaz porteur) qui non seulement possède une capacité de traitement en raison de la formation d'un plasma, mais transporte également le gaz pour génération de plasma dans son ensemble jusqu'à une source de plasma, et gaz renforçant l'efficacité du traitement qui a pour effet de renforcer l'efficacité de traitement du plasma à pression atmosphérique. En outre, un gaz de soutien à la génération, servant à soutenir la formation de plasma, est également mélangé au gaz mixte susmentionné. L'invention concerne également un procédé de génération de plasma qui utilise le gaz pour génération de plasma afin de générer un plasma, et un plasma à pression atmosphérique qui est généré à partir du gaz pour génération de plasma.
PCT/JP2012/064687 2011-06-08 2012-06-07 Gaz pour génération de plasma, procédé de génération de plasma et plasma à pression atmosphérique ainsi généré WO2012169588A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-128588 2011-06-08
JP2011128588A JP2012256501A (ja) 2011-06-08 2011-06-08 プラズマ生成用ガスおよびプラズマ生成方法並びにこれにより生成された大気圧プラズマ

Publications (1)

Publication Number Publication Date
WO2012169588A1 true WO2012169588A1 (fr) 2012-12-13

Family

ID=47296143

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/064687 WO2012169588A1 (fr) 2011-06-08 2012-06-07 Gaz pour génération de plasma, procédé de génération de plasma et plasma à pression atmosphérique ainsi généré

Country Status (2)

Country Link
JP (1) JP2012256501A (fr)
WO (1) WO2012169588A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103841681A (zh) * 2013-04-16 2014-06-04 杜志刚 等离子氮气高压气体发热装置
CN103648199A (zh) * 2013-12-06 2014-03-19 阳泉市新鑫科技研究所有限责任公司 等离子氦气和二氧化碳高压气体发热装置
CN103648200A (zh) * 2013-12-06 2014-03-19 阳泉市新鑫科技研究所有限责任公司 等离子氙气高压气体发热装置
CN104878180B (zh) * 2015-05-25 2017-04-12 马钢(集团)控股有限公司 一种电工钢等离子稳定悬浮装置及其制作方法
JP7448120B2 (ja) 2019-11-14 2024-03-12 国立研究開発法人農業・食品産業技術総合研究機構 プラズマを用いてゲノム編集酵素を植物細胞内に導入する方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002159845A (ja) * 2000-11-22 2002-06-04 Konica Corp 表面処理方法
JP2011023244A (ja) * 2009-07-16 2011-02-03 Panasonic Electric Works Co Ltd プラズマ処理装置
JP2011512616A (ja) * 2008-02-01 2011-04-21 フジフィルム マニュファクチュアリング ヨーロッパ ビー．ヴィ． 移動基材のプラズマ表面処理の方法及び装置
JP2011517368A (ja) * 2008-02-29 2011-06-02 アプライド マテリアルズ インコーポレイテッド 基板からポリマーを除去するための方法及び装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002159845A (ja) * 2000-11-22 2002-06-04 Konica Corp 表面処理方法
JP2011512616A (ja) * 2008-02-01 2011-04-21 フジフィルム マニュファクチュアリング ヨーロッパ ビー．ヴィ． 移動基材のプラズマ表面処理の方法及び装置
JP2011517368A (ja) * 2008-02-29 2011-06-02 アプライド マテリアルズ インコーポレイテッド 基板からポリマーを除去するための方法及び装置
JP2011023244A (ja) * 2009-07-16 2011-02-03 Panasonic Electric Works Co Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JP2012256501A (ja) 2012-12-27

Similar Documents

Publication Publication Date Title
WO2012169588A1 (fr) Gaz pour génération de plasma, procédé de génération de plasma et plasma à pression atmosphérique ainsi généré
US11384420B2 (en) Method and device for promoting adhesion of metallic surfaces
KR101807002B1 (ko) 액체 플라즈마 젯 분사 장치
WO2007063987A1 (fr) Procede de traitement/lavage avec des mousses de plasma dans de l’eau ultra-pure et appareil correspondant
JP4296523B2 (ja) プラズマ発生装置
JP2002151494A (ja) 常圧プラズマ処理方法及びその装置
JP2002151480A (ja) 半導体素子の処理方法及びその装置
KR101899177B1 (ko) 필름 표면 처리 방법 및 장치
JP2002143795A (ja) 液晶用ガラス基板の洗浄方法
JP4341149B2 (ja) 表面処理方法
JP5126983B2 (ja) プラズマ発生装置
KR20020071694A (ko) 대기압 플라즈마를 이용한 표면 세정방법 및 장치
JP2002151543A (ja) 金属電極の酸化膜除去方法
JP2004211161A (ja) プラズマ発生装置
WO2022196580A1 (fr) Procédé de modification de surface
JP2002151476A (ja) レジスト除去方法及びその装置
JP2004055301A (ja) プラズマ処理装置およびプラズマ処理方法
JP2003154256A (ja) 放電プラズマ処理装置及びそれを用いた放電プラズマ処理方法
JP2003089726A (ja) ポリイミド基材の親水化処理方法
JP2920605B2 (ja) 表面処理方法
JP4420116B2 (ja) プラズマ処理装置及びプラズマ処理方法
TWI599271B (zh) A device for coating nano-particles on a substrate and a method for manufacturing the same
JP2003022900A (ja) 常圧パルスプラズマ処理方法
JP2005332783A (ja) プラズマ処理装置及びプラズマ処理方法
JP2004097966A (ja) 洗浄処理方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12796043

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12796043

Country of ref document: EP

Kind code of ref document: A1