WO2012165167A1 - Cellule solaire et composition de pâte pour la formation d'une électrode d'aluminium pour cellule solaire - Google Patents

Cellule solaire et composition de pâte pour la formation d'une électrode d'aluminium pour cellule solaire Download PDF

Info

Publication number
WO2012165167A1
WO2012165167A1 PCT/JP2012/062687 JP2012062687W WO2012165167A1 WO 2012165167 A1 WO2012165167 A1 WO 2012165167A1 JP 2012062687 W JP2012062687 W JP 2012062687W WO 2012165167 A1 WO2012165167 A1 WO 2012165167A1
Authority
WO
WIPO (PCT)
Prior art keywords
mol
aluminum
solar cell
glass
electrode
Prior art date
Application number
PCT/JP2012/062687
Other languages
English (en)
Japanese (ja)
Inventor
剛啓 中尾
慎嗣 仙田
下田　英雄
Original Assignee
株式会社ノリタケカンパニーリミテド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ノリタケカンパニーリミテド filed Critical 株式会社ノリタケカンパニーリミテド
Priority to CN201280027104.0A priority Critical patent/CN103597548B/zh
Priority to KR1020137031831A priority patent/KR20140027372A/ko
Priority to DE112012002354.4T priority patent/DE112012002354T5/de
Publication of WO2012165167A1 publication Critical patent/WO2012165167A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar battery (cell) and a manufacturing method thereof, and to an aluminum electrode forming paste composition used in the manufacturing method. Note that this application claims priority based on Japanese Patent Application No. 2011-125062 filed on June 3, 2011, the entire contents of which are incorporated herein by reference. .
  • a single-sided light receiving type solar cell as shown in FIG. 1000 is known (see, for example, Patent Documents 1 to 4).
  • This solar cell 1000 includes an n-Si layer 116 formed by pn junction formation on the light-receiving surface side of a p-Si layer (p-type crystalline silicon) 118 of a silicon semiconductor substrate (Si wafer) 111, and on its surface.
  • the back surface of the p-Si layer 118 (referred to as the surface opposite to the light receiving surface; hereinafter the same), it is made of Ag formed by screen printing / baking silver paste in the same manner as the surface electrode 112.
  • a back surface side external connection electrode 122 and an aluminum electrode 120 having a so-called back surface field (BSF) effect are provided.
  • the aluminum electrode 120 is formed on substantially the entire back surface by printing and baking a paste composition (hereinafter also referred to as “aluminum paste”) mainly composed of aluminum (Al) powder. During this firing, an Al—Si alloy layer (not shown) is formed, and aluminum diffuses into the p-Si layer 118 to form a p + layer 124.
  • aluminum paste mainly composed of aluminum (Al) powder.
  • an Ag surface electrode (light-receiving surface electrode) 112 for taking out current is formed on the light-receiving surface side, and recombination prevention of electrons is performed on the back-surface side.
  • a BSF layer 124 is formed.
  • the Ag surface electrode 112 and the aluminum electrode 120 for forming the BSF layer 124 are typically formed by a screen printing method, and are formed by simultaneously sintering both surfaces.
  • a lead wire (lead frame: not shown) for current extraction is soldered to the solar cell wafer 1000 having the electrodes (112, 120, 122) formed on both surfaces in this way. Then, a plurality of solar cell wafers 1000 are connected in series using the lead wires to be modularized, and predetermined power can be supplied in such a modularized state.
  • the Ag electrode 122 is formed on the soldered portion.
  • the formation of the Ag electrode 122 hinders the uniformization of the BSF layer 124, and the formation of the Ag electrode 122 uses silver, which is a noble metal more expensive than aluminum, as the conductive component. It becomes a factor of.
  • the present inventor uses a conductive adhesive film (that is, a film containing an adhesive and conductive particles) without using solder, and a method of thermocompression bonding of the lead wire was considering. Specifically, the connection is executed without using solder by thermally bonding the lead wire to the position of the external connection electrode 122 made of Al via a conductive adhesive film.
  • this technique using a conductive adhesive film cannot provide sufficient adhesive strength on the electrode 122 made of aluminum. That is, as a result of examination by the present inventors, when the adhesive portion of the lead wire (conductive ribbon wire) through the conductive adhesive film is peeled off, peeling occurs in the aluminum film in the electrode 122 made of aluminum, which is sufficient. It was thought that this was the reason why it was not possible to obtain a sufficient adhesive strength. More specifically, it was found that the aluminum film itself in the electrode 122 made of aluminum has no strength, and the adhesive strength after firing between the aluminum particles forming the aluminum film is weak.
  • the lead wire can be bonded on the aluminum electrode of the solar cell wafer, the advantage that the BSF layer 124 can be formed on the entire surface is obtained, and the use of silver is not necessary. A significant cost reduction corresponding to the price difference can be achieved.
  • the present invention has been created in view of the above points, and one object of the present invention is to provide a paste composition for forming an aluminum electrode (particularly a backside external connection electrode) with improved adhesive strength. To do. Another object of the present invention is to provide a solar cell including an aluminum electrode (particularly a backside external connection electrode) formed using such a paste composition and a method for producing the solar cell.
  • the paste composition provided by the present invention is a paste composition for forming an aluminum electrode of a solar cell.
  • the paste composition for aluminum electrode formation of the solar cell disclosed here contains aluminum powder, glass frit, and an organic vehicle.
  • the glass frit has the following conditions: (1) The glass softening point is 400 ° C. or higher and 600 ° C. or lower; (2) The coefficient of thermal expansion is 60 ⁇ 10 ⁇ 7 / ° C. or more and 80 ⁇ 10 ⁇ 7 / ° C. or less; (3) Including SiO 2 , B 2 O 3 , ZnO and / or PbO, Al 2 O 3 , and at least one alkali metal oxide as essential components; It is characterized by comprising.
  • the paste composition is applied to the silicon semiconductor substrate by having the glass frit (glass powder) having the properties described in (1) to (3) above.
  • the adhesive strength of the formed aluminum electrode can be improved. Therefore, for example, it is possible to stably join an aluminum electrode (for example, a backside external connection electrode) formed from the paste composition and another connection member (for example, a conductive adhesive film including an adhesive and conductive particles). Can be maintained.
  • the conductive component of the conventional electrode, for example, the external connection electrode from a noble metal such as silver with inexpensive aluminum, and to reduce the cost corresponding to the material price difference between silver and aluminum. Can be realized.
  • the Ag electrode for external connection on the back side can be replaced with an aluminum electrode, the BSF layer can be formed uniformly on the entire back side of the silicon semiconductor substrate.
  • the glass frit includes 100 mol% of the following components as a whole, and the molar content of each component is SiO 2 20-35 mol%, B 2 O 3 5-30 mol%, ZnO and / or PbO 25-45 mol%, Al 2 O 3 2-10 mol%, At least one of Li 2 O, Na 2 O and K 2 O, 5 to 15 mol%, At least one of CaO, SrO and BaO 0-10 mol%, Bi 2 O 3 0-5 mol%, And the total of these components is 95 mol% or more (for example, 100 mol%) of the entire glass frit.
  • the adhesive strength (peeling strength) of an aluminum electrode (for example, a backside external connection electrode) formed from the paste composition can be further improved.
  • the glass frit has 100 mol% of the following components as a whole, and the molar content of each component is SiO 2 20-30 mol%, B 2 O 3 20-30 mol%, ZnO 25-35 mol%, Al 2 O 3 3-7 mol%, At least one of Li 2 O, Na 2 O and K 2 O 10-15 mol%, 2 to 10 mol% of at least one of CaO, SrO and BaO, And the total of these components is 95 mol% or more (for example, 100 mol%) of the entire glass frit.
  • the adhesive strength (peeling strength) of an aluminum electrode such as a back-side external connection electrode formed from the paste composition can be further improved. Moreover, such high adhesive strength can be realized without Pb.
  • the glass softening point of the glass frit is 500 ° C. or more and 600 ° C. or less.
  • the total paste composition is 100% by mass
  • the aluminum powder content is 60 to 80% by mass
  • the above The glass frit content is 2 to 10% by mass.
  • a solar cell comprising: At least a part of the aluminum electrode as a glass composition has the following conditions: (1) The glass softening point is 400 ° C. or higher and 600 ° C. or lower; (2) The coefficient of thermal expansion is 60 ⁇ 10 ⁇ 7 / ° C. or more and 80 ⁇ 10 ⁇ 7 / ° C.
  • the solar cell characterized by containing the glass composition which comprises can be provided.
  • the solar cell having such a configuration can achieve high adhesive strength (peel strength) in an aluminum electrode containing the glass composition (glass component) having the above properties.
  • the conductive component of the portion where the Ag electrode has been used in the past, for example, the external connection electrode can be replaced with inexpensive aluminum from noble metal such as silver. This makes it possible to reduce the manufacturing cost of the electrode (substitution from the Ag electrode to the aluminum electrode).
  • the glass composition is composed of 100 mol% of the following components as a whole, and the molar content of each component is SiO 2 20-35 mol%, B 2 O 3 5-30 mol%, ZnO and / or PbO 25-45 mol%, Al 2 O 3 2-10 mol%, At least one of Li 2 O, Na 2 O and K 2 O, 5 to 15 mol%, At least one of CaO, SrO and BaO 0-10 mol%, Bi 2 O 3 0-5 mol%, And the total of these components is 95 mol% or more (typically 100 mol%) of the entire glass composition.
  • the glass composition has 100% by mole of the following components as a whole, and the molar content of each component is SiO 2 20 ⁇ 30mol%, B 2 O 3 20-30 mol%, ZnO 25-35 mol%, Al 2 O 3 3-7 mol%, At least one of Li 2 O, Na 2 O and K 2 O 10-15 mol%, 2 to 10 mol% of at least one of CaO, SrO and BaO, And the total of these components is 95 mol% or more (typically 100 mol%) of the entire glass composition.
  • the glass softening point of the glass composition is 500 ° C. or higher and 600 ° C. or lower.
  • an aluminum electrode having an adhesive strength (peel strength) equal to or higher than that of a conventional Ag electrode can be formed on the silicon semiconductor substrate as the external connection electrode.
  • an external connection electrode is formed on the back surface side of the silicon semiconductor substrate, and the external connection electrode is formed by an aluminum electrode containing the glass composition. It is configured.
  • a conductive adhesive film is affixed on an aluminum electrode containing the glass composition that constitutes the external connection electrode.
  • the present invention provides, as another aspect for realizing the above object, a silicon semiconductor substrate, a light-receiving surface electrode formed on the light-receiving surface side that is one surface of the substrate, and the other surface of the substrate
  • a method for producing a solar cell comprising an aluminum electrode formed on a back surface side is provided. That is, the solar cell manufacturing method disclosed herein is characterized in that at least a part of the aluminum electrode formed on the back surface side is formed using any paste composition provided by the present invention. .
  • FIG. 1 is a cross-sectional view schematically showing an example of the structure of a solar cell 100 according to an embodiment of the present invention.
  • 2A and 2B are a top view and a cross-sectional view schematically showing the configuration of the back surface side of the substrate 11 in the solar cell 100, respectively.
  • FIG. 3 is a perspective view schematically showing a configuration in which the conductive adhesive film 30 is disposed on the external connection aluminum electrode 22 on the back surface side of the solar cell 100.
  • 4A and 4B are cross-sectional views showing a structure in which a lead wire (tab wire) 35 is disposed on the external connection aluminum electrode 22 with a conductive adhesive film 30 interposed therebetween.
  • FIG. 5 is a cross-sectional view schematically showing the configuration of the strength measuring apparatus 300 that performs the adhesive strength evaluation.
  • FIG. 6 is a graph showing the relationship between the adhesive strength and the softening point of the glass frit.
  • FIG. 7 is a cross-sectional view schematically showing an example of the structure of a conventional solar cell 1000.
  • the aluminum electrode forming paste composition disclosed herein is an aluminum paste used for forming an aluminum electrode in a solar cell, and includes a paste form (expressed as ink form) containing aluminum powder, glass frit, and an organic vehicle.
  • the aluminum powder refers to an aggregate of particles mainly composed of aluminum (Al), and is typically an aggregate of particles composed of Al alone.
  • an impurity other than Al or an alloy mainly composed of Al is used.
  • Even a trace amount may be included in the “aluminum powder” as long as it is an aggregate of particles mainly composed of aluminum as a whole.
  • the aluminum powder itself may be produced by a conventionally known production method and does not require special production means.
  • the particles constituting the aluminum powder to be used are typically spherical, but are not limited to the so-called spherical shape. It may contain flake shaped or irregular shaped particles.
  • the aluminum powder used is preferably a powder having a relatively narrow particle size distribution (in other words, a uniform particle size).
  • a powder having a relatively narrow particle size distribution in other words, a uniform particle size.
  • the ratio (D10 / D90) of the particle size (D10) when the cumulative volume is 10% and the particle size (D90) when the cumulative volume is 90% in the particle size distribution based on the laser diffraction method can be adopted.
  • the value of D10 / D90 is 1, and conversely, the value of D10 / D90 approaches 0 as the particle size distribution becomes wider.
  • It is preferable to use a powder having a relatively narrow particle size distribution such that the value of D10 / D90 is 0.2 or more (for example, 0.2 to 0.5).
  • the aluminum powder contained in the aluminum electrode forming paste composition disclosed herein suitably has an average particle size of 20 ⁇ m or less.
  • an aluminum powder having an average particle size of about 1 ⁇ m to 10 ⁇ m can be preferably used.
  • the average particle diameter refers to a particle diameter at a cumulative volume of 50% in the particle size distribution of the powder, that is, D50 (median diameter).
  • D50 can be easily measured by a particle size distribution measuring apparatus based on a laser diffraction method.
  • the content of aluminum powder is suitably about 55 to 85% by mass, more preferably 60 to 80% by mass, based on 100% by mass of the entire paste composition.
  • an aluminum electrode having a higher density (for example, an aluminum electrode for external connection having a film thickness of 100 ⁇ m or less, for example, a film thickness of 10 ⁇ m to 100 ⁇ m) is suitable on a silicon semiconductor substrate. Can be formed.
  • glass frit is an inorganic additive that improves the adhesive strength of the aluminum electrode.
  • the glass frit in the paste composition (aluminum paste) provided by the present invention, the glass frit has the above-mentioned conditions (1) to (3), so that the formed aluminum electrode has high adhesive strength (peel strength). Can be granted. That is, the glass frit (glass composition) contained in the aluminum electrode forming paste composition disclosed herein has, for example, a thermal expansion coefficient (linear thermal expansion coefficient) of 60 ⁇ 10 ⁇ 7 / ° C. or more and 80 ⁇ 10 8. Those having ⁇ 7 / ° C.
  • thermal expansion coefficient is a temperature measured by a thermomechanical analyzer (TMA) based on a general differential expansion method (TMA) to a temperature below the glass softening point (for example, 400 ° C. or 500 ° C. Calculated as an average value during (° C).
  • TMA thermomechanical analyzer
  • TMA general differential expansion method
  • the glass frit contained in the aluminum electrode forming paste composition disclosed herein is calculated by a glass softening point (measured by a general thermomechanical analyzer (TMA) in the same manner as the thermal expansion coefficient).
  • TMA thermomechanical analyzer
  • a glass softening point) of 400 ° C. or higher and 600 ° C. or lower is suitable.
  • a glass softening point of 500 ° C. or more and 600 ° C. or less is particularly preferable.
  • glass frit As a glass frit (glass composition) having the preferred thermal expansion coefficient and glass softening point, SiO 2 , B 2 O 3 , ZnO and / or PbO, Al 2 O 3 , and at least one kind It is preferable to include an alkali metal oxide (for example, selected from Li 2 O, Na 2 O, and K 2 O) as an essential component.
  • an alkali metal oxide for example, selected from Li 2 O, Na 2 O, and K 2 O
  • the glass frit (glass composition) contained in the aluminum electrode forming paste composition disclosed herein the following components as a whole are assumed to be 100 mol%, and the molar content of each component is: SiO 2 20-35 mol%, B 2 O 3 5-30 mol%, ZnO and / or PbO 25-45 mol%, Al 2 O 3 2-10 mol%, At least one of Li 2 O, Na 2 O and K 2 O, 5 to 15 mol%, At least one of CaO, SrO and BaO 0-10 mol%, Bi 2 O 3 0-5 mol%, The total of these components is 95 mol% or more (typically 100 mol%) of the entire glass frit (glass composition).
  • a glass frit having a particularly preferable composition 100 mol of all the following components are contained. %, The molar content of each component is SiO 2 20-30 mol%, B 2 O 3 20-30 mol%, ZnO 25-35 mol%, Al 2 O 3 3-7 mol%, At least one of Li 2 O, Na 2 O and K 2 O 10-15 mol%, 2 to 10 mol% of at least one of CaO, SrO and BaO, The total of these components is 95 mol% or more (typically 100 mol%) of the entire glass frit (glass composition).
  • the adhesive strength (peel strength) of the aluminum electrode to be formed can be further improved.
  • SiO 2 which is an essential component is a main component constituting a glass skeleton. If the SiO 2 content is too high, the glass softening point becomes too high, which is not preferable. On the other hand, if the SiO 2 content is too low, the chemical resistance and water resistance decrease, which is not preferable.
  • B 2 O 3 is a component having a high effect of lowering the softening point and the melting temperature of the glass frit. If the B 2 O 3 content is too low, the effect of lowering the softening point and melting temperature of the glass cannot be obtained.
  • ZnO or PbO is a component that can lower the softening point of the glass frit (glass composition) or adjust the thermal expansion coefficient, and any one or both of ZnO and PbO can be used. It is preferable to contain in the range of the said content rate. If the content of these components is too high, the glass softening point is too low, which is not preferable. A PbO free material is preferred.
  • Al 2 O 3 is a component that controls the fluidity of the glass frit during melting and is involved in the adhesion stability during the formation of the aluminum electrode. If the Al 2 O 3 content is too low, the adhesion stability is lowered, which is not preferred. If the Al 2 O 3 content is too high, the chemical resistance of the glass may be lowered, which is not preferred. Further, alkali metal oxide components such as Li 2 O, Na 2 O, K 2 O is a component to increase the thermal expansion coefficient. If the content of these alkali metal oxide components is too low, the thermal expansion coefficient may be too low. On the other hand, if the content is too high, the thermal expansion coefficient becomes excessively high, which is not preferable.
  • alkali metal oxide components such as Li 2 O, Na 2 O, K 2 O is a component to increase the thermal expansion coefficient. If the content of these alkali metal oxide components is too low, the thermal expansion coefficient may be too low. On the other hand, if the content is too high, the thermal expansion coefficient becomes excessively high, which is not
  • the glass frit can contain an arbitrary component in addition to the essential components described above.
  • an alkaline earth metal oxide component such as CaO, SrO, or BaO at a content of 10 mol% or less.
  • the thermal expansion coefficient can be adjusted more easily, and the chemical resistance, etc. can be improved by diversifying the glass composition (multiple types of constituent metal elements). Is preferable because it can improve the stability of the glass.
  • an alkaline earth metal oxide component such as CaO, SrO, or BaO at a content of, for example, 1 mol% to 10 mol% (eg, 2 to 10 mol%, particularly 5 to 10 mol%).
  • Bi 2 O 3 may be contained in an appropriate amount, for example, in a proportion of 10 mol% or less (preferably 5 mol% or less) for the purpose of improving the stability of the fired glass (and thus the fired aluminum electrode). Good.
  • other oxide components such as Zr, Ti, V, Nb, La, Ce, Sn, and P are appropriately included at a ratio of 5 mol% or less (for example, about 0.1 to 5 mol%) of the entire glass composition. Also good.
  • the glass frit contained in the paste composition is a ratio based on the BET method. Those having a surface area of about 0.5 m 2 / g or more and 50 m 2 / g or less are preferred, and those having an average particle diameter (D50) of 2 ⁇ m or less (particularly about 1 ⁇ m or less) are preferred. Further, the content of the glass powder in the paste composition is not particularly limited, but it is suitably about 1 to 15% by mass, and about 2 to 10% by mass with respect to 100% by mass of the entire paste composition. preferable. According to the paste composition containing the glass frit having the above elemental composition with such a content, an aluminum electrode having high adhesive strength (for example, an aluminum electrode for external connection on the back surface side) can be suitably formed.
  • the paste composition disclosed here includes the above-described aluminum powder and glass frit (glass powder) as a solid content, and a liquid medium (organic vehicle) for dispersing the solid content.
  • the organic solvent constituting such a vehicle is not particularly limited as long as it can disperse aluminum powder and glass frit satisfactorily, and those used in conventional pastes of this type can be used without particular limitation.
  • high boiling point organic solvents such as ethylene glycol and diethylene glycol derivatives (glycol ether solvents), toluene, xylene, butyl carbitol (BC), butyl diglycol acetate (BDGA), terpineol and the like are used. It can be used in combination of multiple types.
  • various resin components can be included as an organic binder constituting the vehicle. Any resin component may be used as long as it can provide the paste composition disclosed herein with good viscosity and coating film forming ability (adhesion to a silicon substrate), and is used in conventional pastes of this type. Things can be used without particular limitation. Examples thereof include those mainly composed of acrylic resin, epoxy resin, phenol resin, alkyd resin, cellulosic polymer, polyvinyl alcohol, rosin resin and the like. Among these, cellulosic polymers such as ethyl cellulose are particularly preferable. Although there is no particular limitation, the organic vehicle content is suitably about 10 to 30% by mass of the total paste, and more preferably about 15 to 25% by mass.
  • the paste composition disclosed herein is typically easily prepared by mixing aluminum powder, glass frit (glass powder), and a suitable organic vehicle. Can do.
  • a three-roll mill or other kneader may be used to mix and stir a predetermined mixing ratio of aluminum powder and glass frit together with an organic vehicle at a predetermined mixing ratio.
  • the paste composition disclosed here can be handled in the same manner as an aluminum paste conventionally used to form an aluminum electrode (and thus a p + layer or BSF layer) as a back electrode on a substrate, A conventionally known method can be employed without any particular limitation.
  • the paste composition is applied (applied) to a silicon semiconductor substrate by a screen printing method, a dispenser coating method, a dip coating method, or the like so as to obtain a desired film thickness or coating film pattern.
  • the thickness of the substrate can be set in consideration of the desired solar cell size, the thickness of the aluminum electrode formed on the substrate, the strength (for example, the breaking strength) of the substrate, and the like.
  • the paste coating product is dried at an appropriate temperature (for example, room temperature or higher, typically about 100 ° C.).
  • the dried coating film is baked by heating in an appropriate baking furnace (for example, a high-speed baking furnace) under appropriate heating conditions (for example, 600 ° C. to 900 ° C., preferably 700 ° C. to 800 ° C.) for a predetermined time. I do.
  • an appropriate baking furnace for example, a high-speed baking furnace
  • appropriate heating conditions for example, 600 ° C. to 900 ° C., preferably 700 ° C. to 800 ° C.
  • FIG. 1 is a cross-sectional view showing a configuration of a solar cell 100 according to an embodiment of the present invention.
  • the solar cell 100 of this embodiment includes a silicon semiconductor substrate (Si wafer) 11, a light receiving surface electrode 12 formed on one surface side (front surface side) of the substrate 11, and the other surface side (back surface side) of the substrate 11. ) Formed on the aluminum electrode (20, 22).
  • the silicon semiconductor substrate 11 of this embodiment is made of silicon such as crystalline silicon or amorphous silicon.
  • the n-Si layer 16 formed by pn junction formation is located on the light receiving surface side of the p-Si layer (p-type crystalline silicon) 18 of the substrate 11.
  • An antireflection film 14 made of titanium oxide or silicon nitride formed by general chemical vapor deposition (CVD) or the like is located on the surface of the n-Si layer 16.
  • the surface of the antireflection film 14 is provided with a surface electrode (light receiving surface electrode) 12 made of Ag, typically formed by screen printing and baking a silver paste.
  • an aluminum electrode forming paste composition disclosed herein (hereinafter sometimes referred to as “first aluminum paste” for convenience) is formed on the back side of the p-Si layer 18 as a material.
  • An aluminum electrode 22 is provided.
  • the aluminum electrode 22 corresponds to the external connection electrode 22 on the back surface side that is electrically connected to another external connection member such as a lead wire (conductive ribbon line).
  • the external connection aluminum electrode 22 of this embodiment is a first aluminum having a predetermined composition as in the case of forming this type of conventional electrode (for example, forming an external connection Ag electrode using a silver paste as a material). It is formed by screen printing and baking the paste.
  • an aluminum electrode 20 made of another aluminum paste (hereinafter sometimes referred to as “second aluminum paste” for convenience) is formed together with the external connection aluminum electrode 22.
  • the aluminum electrode 20 is formed on substantially the entire back surface of the p-Si layer 18 and is an aluminum electrode (hereinafter referred to as “back surface wide aluminum electrode”) that exhibits a back surface field (BSF) effect.
  • the external connection aluminum electrode 22 is linearly formed on the back surface side of the p-Si layer 18, and the back surface wide aluminum electrode 20 is formed on the back surface side of the p-Si layer 18.
  • the external connection aluminum electrode 22 is formed on substantially the entire surface other than the region where the external connection aluminum electrode 22 is formed.
  • the back surface wide aluminum electrode 20 covers a part of the external connection aluminum electrode 22 (specifically, both edges of the linear structure) and the external connection aluminum electrode 22 It is formed to have an opening 23 that is exposed.
  • the back surface wide aluminum electrode 20 covers both edges of the external connection aluminum electrode 22, and the both sides are formed so that the side surface of the back surface wide aluminum electrode 20 and the side surface of the external connection aluminum electrode 22 are in contact with each other.
  • the back surface wide aluminum electrode 20 may be a general aluminum paste used for forming an aluminum electrode of a conventional solar cell, including aluminum powder, glass frit, and an organic vehicle. The content is not particularly limited. Therefore, the detailed description is omitted because it does not characterize the present invention.
  • the first aluminum paste is applied to the silicon semiconductor substrate (wafer) 11 by a screen printing method, a dispenser coating method, a dip coating method, or the like so as to obtain a desired thickness or coating film pattern.
  • the coated material is dried at an appropriate temperature (room temperature to about 100 ° C.).
  • a second aluminum paste is applied to the silicon semiconductor substrate 11 so that the opening 23 exposing the external connection aluminum electrode 22 is formed.
  • the coated material is dried at an appropriate temperature (room temperature to about 100 ° C.). Thereafter, the dried coating film is baked by heating in an appropriate baking furnace (for example, a high-speed baking furnace) under appropriate heating conditions (for example, 700 to 800 ° C.) for a predetermined time.
  • an appropriate baking furnace for example, a high-speed baking furnace
  • the coated material is baked on the substrate, and the external connection aluminum electrode 22 and the back surface wide aluminum electrode 20 as shown in FIG. 1 are formed.
  • the external connection aluminum electrode 22 and the back surface wide aluminum electrode 20 are fired, and the p + layer (BSF layer) 24 can be formed.
  • 2A and 2B are a top view and a cross-sectional view schematically showing the configuration of the back surface side of the substrate 11 of the silicon-based solar cell 100 of the present embodiment. 2 (a) and 2 (b), the back side of the substrate 11 is shown as being positioned upward for convenience.
  • the external connection aluminum electrode 22 is formed at a position where the back side external connection electrode (Ag electrode) 122 is located.
  • the external connection aluminum electrode 22 can function as, for example, an electrode having a width of 2 to 6 mm. In general, it is difficult to join aluminum and solder.
  • the conductive adhesive film 30 is attached so as to be crimped to the external connection aluminum electrode 22 (see FIG. 3 described later).
  • the conductive adhesive film 30 (FIG. 3) is typically an anisotropic conductive adhesive film.
  • an adhesive component epoxy resin, phenoxy resin, acrylic resin, polyimide resin, polyamide resin, polycarbonate resin are used. Other thermosetting resins and thermoplastic resins can be used.
  • various conductive particles are dispersed in the resin (adhesive) component, and the conductive adhesive film 30 is By heating and pressurizing, the conductive adhesive film 30 can be affixed to a predetermined site, and conduction can be ensured by the conductive particles.
  • conductive adhesive film 30 there is no restriction
  • the electroconductive adhesive film of this kind of application marketed can be employ
  • FIG. 3 is a perspective view schematically showing a configuration in which the conductive adhesive film 30 as described above is disposed on the external connection aluminum electrode 22 on the back surface side of the solar cell 100.
  • the conductive adhesive film 30 is disposed on the surface of the external connection aluminum electrode 22, and the lead wire, that is, the tab wire (conductive ribbon wire) 35 is disposed on the surface of the conductive adhesive film 30. It will be.
  • FIG. 4A and 4B show a cross-sectional structure in which the tab wire 35 is disposed on the external connection aluminum electrode (bus bar electrode) 22 with the conductive adhesive film 30 interposed therebetween.
  • a conductive adhesive film 30 is laminated on the external connection aluminum electrode 22 formed on the substrate 11, and a tab wire 35 is formed on the conductive adhesive film 30. Laminate.
  • the conductive adhesive film 30 has a configuration in which conductive particles 31 (for example, nickel particles plated with gold) are uniformly dispersed in an adhesive component 32 made of, for example, an epoxy thermosetting resin.
  • the laminate of the external connection aluminum electrode 22, the conductive adhesive film 30, and the tab wire 35 is pressed and heated using the conductive adhesive film 30 as a tab wire bonding material.
  • the conductive particles 31 in the conductive adhesive film 30 conduct the external connection aluminum electrode 22 and the tab wire 35 (see arrow 55).
  • the adhesive component (here, thermosetting resin) 32 in the conductive adhesive film 30 is thermally cured, whereby reliable conduction equivalent to solder bonding can be realized.
  • soldering the tab wire 35 it is necessary to apply a high temperature of 200 ° C. or higher, but in the bonding using the conductive adhesive film 30, low-temperature bonding at about 180 ° C. can be performed. Therefore, the influence (for example, generation
  • the external connection aluminum electrode 22 composed of the first aluminum paste and the back surface wide aluminum electrode 20 composed of the second aluminum paste are used as the back surface aluminum electrodes, but the present invention is not limited thereto.
  • all the back surface aluminum electrodes including the back surface wide aluminum electrode 20 can be formed by the first aluminum paste.
  • test examples relating to the present invention will be described, but the present invention is not intended to be limited to those shown in the test examples.
  • the difference in adhesive strength was evaluated when the properties of the glass frit which is a solid component of the aluminum electrode forming paste composition (aluminum paste) were made different from each other.
  • a total of 8 types of glass samples (sample 1 to sample 8) having the glass composition (mol%), the glass softening point (° C.) and the thermal expansion coefficient (thermal expansion coefficient) shown in Table 1 below were used. .
  • Example 1 a total of 8 types of aluminum pastes (Test Examples 1 to 8) each containing the glass frit (Samples 1 to 8) shown in Table 1 were prepared.
  • the aluminum paste according to each test example was different only in the properties of the glass frit described above, and other components (aluminum powder, organic vehicle) and mixing ratio were the same. That is, the contents of the aluminum paste of each test example are as follows. (1) Aluminum powder: Aluminum powder having an average particle size of 6 ⁇ m was used in an amount of 66% by mass of the entire paste. (2) Organic vehicle: As an organic solvent, terpineol was used in an amount of 26% by mass based on the entire paste.
  • ethyl cellulose was used in an amount of about 2% by mass of the entire paste.
  • Glass frit The glass frit having the property of any of the above samples 1 to 8 was used in an amount of 6% by mass of the entire paste.
  • an n-Si layer having a thickness of about 0.5 ⁇ m is formed on the light-receiving surface of the silicon substrate by applying a phosphorus-containing solution to the light-receiving surface of the silicon substrate on which the texture structure is formed by the etching process and performing heat treatment. (N + layer) was formed.
  • an antireflection film titanium oxide film having a thickness of about 50 nm to 100 nm was formed on the n-Si layer by plasma CVD (PECVD).
  • a coating film (thickness of 20 ⁇ m or more and 50 ⁇ m or less) to be a surface electrode (Ag electrode) was formed on the antireflection film by a screen printing method using a predetermined silver paste for forming a surface electrode (Ag electrode).
  • the paste composition of any of the above Test Examples 1 to 8 was printed (applied) by screen printing (using stainless steel screen mesh SUS # 165).
  • a coating film having a thickness of about 30 ⁇ m was formed in a line shape with a width of about 5 mm.
  • this substrate was baked to form a linear aluminum electrode 28 for test evaluation. Specifically, firing was performed at a firing temperature of about 700 ° C.
  • the adhesion strength of the aluminum electrode formed from the paste composition for forming an aluminum electrode according to each test example was measured by performing an adhesion strength evaluation test using the test evaluation cell (solar cell) thus obtained.
  • peel strength evaluation Evaluation of the adhesive strength (peel strength) of the formed aluminum electrode (that is, peel strength evaluation) was performed using a strength measuring device 300 as shown in FIG. Specifically, the strength measuring apparatus 300 shown in FIG. 5 fixes a glass substrate 41 on a fixing jig 40 via a fixing screw 43 and a locking plate 44, and an epoxy adhesive on the glass substrate 41. The light-receiving surface side of the test silicon semiconductor substrate 11 obtained above was fixed by 42. A conductive adhesive film 30, which is a commercial product, is attached to the formed aluminum electrode 28 on the exposed surface side of the silicon semiconductor substrate 11 fixed on the glass substrate 41 in this way by thermocompression bonding, and on the conductive adhesive film 30. Further, a tab line 35 was pasted. Then, as shown in FIG.
  • the strength measuring device 300 is inclined so that the bottom surface of the fixing jig 40 is 135 °, and the extension portion 35e formed in advance on the tab wire 35 is pulled upward in the vertical direction. (See arrow 45), the adhesive strength of tab wire 35 / conductive adhesive film 30 / electrode 28 was measured.
  • the results are shown in the corresponding column of Table 2.
  • the adhesive strength evaluation test peel strength test
  • the adhesive strength evaluation test is performed on a plurality of (two) aluminum electrodes formed from the aluminum paste according to each test example, and the average of the test results (measured values) for the two aluminum electrodes.
  • the graph of FIG. 6 has shown the relationship between the adhesive strength obtained by this test, and the softening point of the glass frit in an aluminum paste.
  • the glass softening point in the aluminum paste exhibited high adhesive strength in the range of 400 ° C. to 600 ° C. (particularly 500 ° C. to 600 ° C.).
  • the aluminum paste of Test Example 6 having a glass softening point around 550 ° C. was used, extremely high adhesive strength was observed.
  • the glass frit has a high thermal expansion coefficient of 60 ⁇ 10 ⁇ 7 / ° C. to 80 ⁇ 10 ⁇ 7 / ° C. (especially 65 ⁇ 10 ⁇ 7 / ° C. to 75 ⁇ 10 ⁇ 7 / ° C.). It was observed to show adhesive strength.
  • ⁇ Adhesive strength test (2)> Further, a linear aluminum electrode having a film thickness of about 30 ⁇ m and a width of about 2 mm is formed on the silicon semiconductor substrate 11 by using the aluminum paste according to Test Example 6 according to the same procedure as the above-described adhesive strength test (1). When the same peel strength evaluation test was conducted, an average value (n 2) of an adhesive strength of 3.25 N / 2 mm was observed as shown in the Example column of Table 3. As a comparative control, a linear Ag electrode having a film thickness of about 30 ⁇ m and a width of about 2 mm is formed on the silicon semiconductor substrate 11 using a normal silver paste instead of the aluminum paste according to Test Example 6, and solder is formed on the surface thereof.
  • Comparative Example B in Table 3 is a result when the aluminum paste according to Test Example 1 is used instead of the aluminum paste according to Test Example 6.
  • an aluminum electrode can be employed as the backside external connection electrode.
  • the BSF layer can be uniformly formed on the entire back surface of the silicon semiconductor substrate (wafer) as compared with the conventional configuration in which the Ag electrode is used as the back surface side external connection electrode.
  • cost reduction corresponding to the material price difference between silver and aluminum can be achieved.
  • the bonding using the conductive adhesive film can be used by the aluminum electrode for external connection with improved adhesion strength (peeling strength) of the aluminum film, a pattern not including the electrode portion for solder bonding can be used. Can be built. As a result, the aluminization of the entire back surface of the substrate (wafer) improves the power generation efficiency of the solar cell due to the uniform formation of the BSF layer, and improves the power generation efficiency of the solar cell due to omitting the bus bar electrode pattern. Can be realized.
  • a light-receiving surface electrode (For example, the bus-bar electrode which comprises a light-receiving surface electrode, or a grid line) using the paste composition for aluminum electrode formation disclosed here.
  • Silicon semiconductor substrate Silicon semiconductor substrate (Si wafer) 12 Light-receiving surface electrode 14 Antireflection film 16 n-Si layer 18 p-Si layer 20 Back surface wide-area aluminum electrode 22 Aluminum electrode 23 for external connection Opening 24 BSF layer 30 Conductive adhesive film 31 Conductive particles 32 Adhesive component 35 Tab Wire (lead wire) 35e Tab extension 40 Fixing jig 41 Glass substrate 100, 200, 1000 Solar cell 300 Strength measuring device

Abstract

L'invention concerne une cellule solaire qui comporte une électrode d'aluminium ayant une force de liaison améliorée ; et une composition de pâte pour la formation de l'électrode d'aluminium. Cette composition de pâte comprend, comme fritte de verre, une qui satisfait les conditions suivantes : (1) la fritte de verre présente un point de ramollissement de verre de 400-600°C (bornes comprises) ; (2) la fritte de verre présente un coefficient de dilatation thermique de 60 × 10-7/°C à 80 × 10-7/°C (bornes comprises) ; et (3) la fritte de verre comprend, comme ingrédients essentiels, SiO2, B2O3, ZnO et/ou PbO, Al2O3 et au moins un oxyde de métal alcalin.
PCT/JP2012/062687 2011-06-03 2012-05-17 Cellule solaire et composition de pâte pour la formation d'une électrode d'aluminium pour cellule solaire WO2012165167A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280027104.0A CN103597548B (zh) 2011-06-03 2012-05-17 太阳能电池和太阳能电池的铝电极形成用膏状组合物
KR1020137031831A KR20140027372A (ko) 2011-06-03 2012-05-17 태양전지 및 태양전지의 알루미늄 전극 형성용 페이스트 조성물
DE112012002354.4T DE112012002354T5 (de) 2011-06-03 2012-05-17 Solarzelle und Pastenzusammensetzung zur Bildung einer Aluminiumelektrode einer Solarzelle

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-125062 2011-06-03
JP2011125062 2011-06-03

Publications (1)

Publication Number Publication Date
WO2012165167A1 true WO2012165167A1 (fr) 2012-12-06

Family

ID=47259030

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/062687 WO2012165167A1 (fr) 2011-06-03 2012-05-17 Cellule solaire et composition de pâte pour la formation d'une électrode d'aluminium pour cellule solaire

Country Status (6)

Country Link
JP (1) JPWO2012165167A1 (fr)
KR (1) KR20140027372A (fr)
CN (1) CN103597548B (fr)
DE (1) DE112012002354T5 (fr)
TW (1) TW201250716A (fr)
WO (1) WO2012165167A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014178419A1 (fr) * 2013-05-02 2014-11-06 株式会社ノリタケカンパニーリミテド Cellule solaire, et composition de pâte pour formation d'électrode en aluminium de cellule solaire
JP2014220127A (ja) * 2013-05-08 2014-11-20 株式会社村田製作所 導電性ペーストとその製造方法およびそれを用いたセラミック電子部品
JP2014241335A (ja) * 2013-06-11 2014-12-25 日立化成株式会社 太陽電池セル及び太陽電池モジュール
JP2015115400A (ja) * 2013-12-10 2015-06-22 東洋アルミニウム株式会社 導電性アルミニウムペースト
JP6074483B1 (ja) * 2015-11-10 2017-02-01 株式会社ノリタケカンパニーリミテド 導電性組成物
KR20180004166A (ko) 2015-05-01 2018-01-10 도요 알루미늄 가부시키가이샤 Perc형 태양전지용 알루미늄 페이스트 조성물
CN114409249A (zh) * 2022-01-06 2022-04-29 江苏日御光伏新材料科技有限公司 一种硅-锂-铅体系及其导电浆料与制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114725224A (zh) * 2022-04-12 2022-07-08 安徽华晟新能源科技有限公司 栅线预制结构及其制备方法、异质结电池的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243935A (ja) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
JP2008159917A (ja) * 2006-12-25 2008-07-10 Kyocera Corp 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
WO2009063841A1 (fr) * 2007-11-15 2009-05-22 Hitachi Chemical Company, Ltd. Cellule de batterie solaire
JP2010192480A (ja) * 2009-02-16 2010-09-02 Nippon Electric Glass Co Ltd 電極形成用ガラス組成物および電極形成材料
JP2010248034A (ja) * 2009-04-16 2010-11-04 Nippon Electric Glass Co Ltd 電極形成用ガラス組成物および電極形成材料

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4970026B2 (ja) * 2006-12-26 2012-07-04 京セラ株式会社 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
US7485245B1 (en) * 2007-10-18 2009-02-03 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
JP5113710B2 (ja) * 2008-10-08 2013-01-09 京都エレックス株式会社 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243935A (ja) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
JP2008159917A (ja) * 2006-12-25 2008-07-10 Kyocera Corp 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
WO2009063841A1 (fr) * 2007-11-15 2009-05-22 Hitachi Chemical Company, Ltd. Cellule de batterie solaire
JP2010192480A (ja) * 2009-02-16 2010-09-02 Nippon Electric Glass Co Ltd 電極形成用ガラス組成物および電極形成材料
JP2010248034A (ja) * 2009-04-16 2010-11-04 Nippon Electric Glass Co Ltd 電極形成用ガラス組成物および電極形成材料

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014178419A1 (fr) * 2013-05-02 2014-11-06 株式会社ノリタケカンパニーリミテド Cellule solaire, et composition de pâte pour formation d'électrode en aluminium de cellule solaire
JP2014220127A (ja) * 2013-05-08 2014-11-20 株式会社村田製作所 導電性ペーストとその製造方法およびそれを用いたセラミック電子部品
JP2014241335A (ja) * 2013-06-11 2014-12-25 日立化成株式会社 太陽電池セル及び太陽電池モジュール
JP2015115400A (ja) * 2013-12-10 2015-06-22 東洋アルミニウム株式会社 導電性アルミニウムペースト
KR20180004166A (ko) 2015-05-01 2018-01-10 도요 알루미늄 가부시키가이샤 Perc형 태양전지용 알루미늄 페이스트 조성물
JP6074483B1 (ja) * 2015-11-10 2017-02-01 株式会社ノリタケカンパニーリミテド 導電性組成物
JP2017092254A (ja) * 2015-11-10 2017-05-25 株式会社ノリタケカンパニーリミテド 導電性組成物
CN114409249A (zh) * 2022-01-06 2022-04-29 江苏日御光伏新材料科技有限公司 一种硅-锂-铅体系及其导电浆料与制备方法

Also Published As

Publication number Publication date
CN103597548A (zh) 2014-02-19
CN103597548B (zh) 2016-05-11
TW201250716A (en) 2012-12-16
KR20140027372A (ko) 2014-03-06
DE112012002354T5 (de) 2014-02-20
JPWO2012165167A1 (ja) 2015-02-23

Similar Documents

Publication Publication Date Title
WO2012165167A1 (fr) Cellule solaire et composition de pâte pour la formation d'une électrode d'aluminium pour cellule solaire
JP6110311B2 (ja) 導電性ペースト組成物ならびにそれらから形成される太陽電池電極および接点
US8123985B2 (en) Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
JP5438113B2 (ja) アルミニウムペーストおよびシリコン太陽電池の製造におけるアルミニウムペーストの使用
CN103283039A (zh) 用于太阳能电池的纳米颗粒墨
US8884277B2 (en) Thick film conductive composition and use thereof
JP2012502503A (ja) 太陽電池電極
CN102428567A (zh) 在硅片正面上形成栅极的方法
TWI725035B (zh) 導電性膠、太陽能電池及太陽能電池的製造方法
JP5590191B2 (ja) 導電性組成物の製造方法
CN109478573A (zh) 太阳能电池用背面电极糊组合物
TW201626404A (zh) 導電性組成物、半導體元件與太陽電池元件
US20130160844A1 (en) Thick-Film Composition Containing Antimony Oxides And Their Use In The Manufacture Of Semiconductor Devices
CN102365688A (zh) 金属浆料及其在硅太阳能电池生产中的用途
CN102428566A (zh) 在硅片正面上形成栅极的方法
JP6371099B2 (ja) 導電性ペースト及び結晶系シリコン太陽電池
WO2014178419A1 (fr) Cellule solaire, et composition de pâte pour formation d'électrode en aluminium de cellule solaire
WO2013031751A1 (fr) Pâte conductrice, électrode pour dispositifs semi-conducteurs, dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
JP2017092253A (ja) 導電性組成物
US9445519B2 (en) Method of manufacturing thick-film electrode
CN103298759B (zh) 导电性糊剂及使用该导电性糊剂的太阳能电池元件
TW201830714A (zh) 用於太陽能電池的前電極和包括其的太陽能電池
JP2014078594A (ja) ペースト組成物と太陽電池
KR20140048465A (ko) 전극형성용 페이스트 조성물, 이를 이용한 실리콘 태양전지
TWI648239B (zh) P型太陽能電池電極的組成物、由使用此組成物製備的電極以及使用此組成物製備的p型太陽能電池

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201280027104.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12793722

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2013517960

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20137031831

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 112012002354

Country of ref document: DE

Ref document number: 1120120023544

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12793722

Country of ref document: EP

Kind code of ref document: A1