CN102428567A - 在硅片正面上形成栅极的方法 - Google Patents
在硅片正面上形成栅极的方法 Download PDFInfo
- Publication number
- CN102428567A CN102428567A CN2010800223160A CN201080022316A CN102428567A CN 102428567 A CN102428567 A CN 102428567A CN 2010800223160 A CN2010800223160 A CN 2010800223160A CN 201080022316 A CN201080022316 A CN 201080022316A CN 102428567 A CN102428567 A CN 102428567A
- Authority
- CN
- China
- Prior art keywords
- metal paste
- weight
- fingers
- frit
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000008569 process Effects 0.000 title claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- 239000002184 metal Substances 0.000 claims abstract description 125
- 238000007639 printing Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000000654 additive Substances 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 52
- 229910052709 silver Inorganic materials 0.000 claims description 41
- 239000004332 silver Substances 0.000 claims description 41
- 239000000843 powder Substances 0.000 claims description 32
- 239000000470 constituent Substances 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 238000007650 screen-printing Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 9
- 238000001354 calcination Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000005308 flint glass Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 abstract description 15
- 238000010304 firing Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 239000004411 aluminium Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 13
- 239000002002 slurry Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000013528 metallic particle Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N alpha-methacrylic acid Natural products CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 229940070765 laurate Drugs 0.000 description 2
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 2
- 235000020778 linoleic acid Nutrition 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000320 mechanical mixture Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000003791 organic solvent mixture Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 241000360136 Megavirus bus Species 0.000 description 1
- 235000021360 Myristic acid Nutrition 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17988509P | 2009-05-20 | 2009-05-20 | |
US61/179,885 | 2009-05-20 | ||
PCT/US2010/035522 WO2010135496A1 (en) | 2009-05-20 | 2010-05-20 | Process of forming a grid electrode on the front-side of a silicon wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102428567A true CN102428567A (zh) | 2012-04-25 |
CN102428567B CN102428567B (zh) | 2015-01-07 |
Family
ID=42271964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080022316.0A Active CN102428567B (zh) | 2009-05-20 | 2010-05-20 | 在硅片正面上形成栅极的方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8486826B2 (zh) |
EP (1) | EP2433304A1 (zh) |
JP (1) | JP5898065B2 (zh) |
KR (1) | KR101322072B1 (zh) |
CN (1) | CN102428567B (zh) |
TW (1) | TWI504011B (zh) |
WO (1) | WO2010135496A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105590663A (zh) * | 2016-01-07 | 2016-05-18 | 清华大学 | 无铅无铋导电银浆、银栅线的制备方法及硅太阳能电池 |
CN106816484A (zh) * | 2015-12-02 | 2017-06-09 | 三星Sdi株式会社 | 形成电极的方法、由其制造的电极以及太阳能电池 |
CN109314149A (zh) * | 2016-07-14 | 2019-02-05 | 亚特比目株式会社 | 太阳电池及太阳电池的制造方法 |
CN109539604A (zh) * | 2019-01-17 | 2019-03-29 | 河北道荣新能源科技有限公司 | 薄膜光伏发电耦合选择性吸收涂层结构 |
CN109631353A (zh) * | 2019-01-17 | 2019-04-16 | 河北道荣新能源科技有限公司 | 薄膜光伏发电耦合选择性吸收涂层制法及其集热管制法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120007517A (ko) * | 2009-03-30 | 2012-01-20 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 금속 페이스트 및 규소 태양 전지의 제조시의 그 용도 |
JP5898065B2 (ja) * | 2009-05-20 | 2016-04-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | シリコンウエハの前面上にグリッド電極を形成する方法 |
CN102479883A (zh) * | 2009-11-27 | 2012-05-30 | 无锡尚德太阳能电力有限公司 | 太阳电池正面电极的形成方法 |
US20110240124A1 (en) * | 2010-03-30 | 2011-10-06 | E.I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of silicon solar cells |
JP5482911B2 (ja) * | 2010-12-24 | 2014-05-07 | 信越化学工業株式会社 | 太陽電池素子の製造方法 |
JP6211511B2 (ja) | 2011-04-18 | 2017-10-11 | ディアミール, エルエルシーDiamir, Llc | miRNAに基づくユニバーサルスクリーニングテスト(UST) |
JP6027171B2 (ja) * | 2011-07-04 | 2016-11-16 | 株式会社日立製作所 | 封着用ガラスフリット、封着用ガラスペースト、導電性ガラスペースト、およびそれらを利用した電気電子部品 |
JP5583196B2 (ja) * | 2011-12-21 | 2014-09-03 | パナソニック株式会社 | 薄膜太陽電池およびその製造方法 |
CN103171260A (zh) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | 一种太阳能电池电极的配套网板及其印刷方法 |
EP2839510A4 (en) | 2012-04-18 | 2015-12-02 | Heraeus Precious Metals North America Conshohocken Llc | PROCESS FOR PRINTING SOLAR CELL CONTACTS |
KR101396444B1 (ko) * | 2013-05-06 | 2014-05-22 | 한화케미칼 주식회사 | 태양전지의 전극의 제조방법 및 이를 이용한 태양전지 |
TW201511300A (zh) * | 2013-09-11 | 2015-03-16 | Inst Nuclear Energy Res Atomic Energy Council | 具有摻雜矽或硼原子之鋁金屬電極之製備方法 |
CN110337423A (zh) | 2017-03-24 | 2019-10-15 | 贺利氏贵金属北美康舍霍肯有限责任公司 | 用于导电膏组合物的低蚀刻和非接触式玻璃 |
CN108110087B (zh) * | 2017-12-20 | 2019-12-17 | 江苏日托光伏科技股份有限公司 | 一种低线宽mwt硅太阳能电池的制备方法 |
US20190280133A1 (en) * | 2018-03-09 | 2019-09-12 | Heraeus Precious Metals North America Conshohocken Llc | Seed layer for improved contact on a silicon wafer |
KR102576589B1 (ko) * | 2018-09-05 | 2023-09-08 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
US20210257505A1 (en) * | 2020-02-18 | 2021-08-19 | Dupont Electronics, Inc. | Solar cell and method for manufacturing the same |
JP2021022735A (ja) * | 2020-09-21 | 2021-02-18 | アートビーム株式会社 | 太陽電池および太陽電池の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5279682A (en) * | 1991-06-11 | 1994-01-18 | Mobil Solar Energy Corporation | Solar cell and method of making same |
US20060231800A1 (en) * | 2005-04-14 | 2006-10-19 | Yueli Wang | Method of manufacture of semiconductor device and conductive compositions used therein |
WO2008026415A1 (en) * | 2006-08-31 | 2008-03-06 | Shin-Etsu Handotai Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
WO2008078771A1 (ja) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | 太陽電池素子及び太陽電池素子の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03502627A (ja) | 1988-06-10 | 1991-06-13 | エイエスイー・アメリカス・インコーポレーテッド | 太陽電池用接点製作の改良された方法 |
US5178685A (en) * | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
JP4121928B2 (ja) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
CN102593243A (zh) * | 2007-08-31 | 2012-07-18 | 费罗公司 | 用于太阳能电池的分层触点结构 |
TW200926210A (en) | 2007-09-27 | 2009-06-16 | Murata Manufacturing Co | Ag electrode paste, solar battery cell, and process for producing the solar battery cell |
WO2009059302A1 (en) | 2007-11-02 | 2009-05-07 | Alliance For Sustainable Energy, Llc | Fabrication of contacts for silicon solar cells including printing burn through layers |
JP2009193993A (ja) * | 2008-02-12 | 2009-08-27 | Mitsubishi Electric Corp | 太陽電池電極の製造方法および太陽電池電極 |
US8151786B2 (en) * | 2009-04-30 | 2012-04-10 | The Brinkmann Corporation | Gas cooking appliance having an automatic gas shutoff mechanism |
JP5898065B2 (ja) * | 2009-05-20 | 2016-04-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | シリコンウエハの前面上にグリッド電極を形成する方法 |
-
2010
- 2010-05-20 JP JP2012512017A patent/JP5898065B2/ja active Active
- 2010-05-20 EP EP20100722877 patent/EP2433304A1/en not_active Withdrawn
- 2010-05-20 US US12/783,761 patent/US8486826B2/en active Active
- 2010-05-20 CN CN201080022316.0A patent/CN102428567B/zh active Active
- 2010-05-20 TW TW099116179A patent/TWI504011B/zh not_active IP Right Cessation
- 2010-05-20 KR KR1020117030334A patent/KR101322072B1/ko not_active IP Right Cessation
- 2010-05-20 WO PCT/US2010/035522 patent/WO2010135496A1/en active Application Filing
-
2013
- 2013-06-14 US US13/917,753 patent/US9054239B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5279682A (en) * | 1991-06-11 | 1994-01-18 | Mobil Solar Energy Corporation | Solar cell and method of making same |
US20060231800A1 (en) * | 2005-04-14 | 2006-10-19 | Yueli Wang | Method of manufacture of semiconductor device and conductive compositions used therein |
WO2008026415A1 (en) * | 2006-08-31 | 2008-03-06 | Shin-Etsu Handotai Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
WO2008078771A1 (ja) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | 太陽電池素子及び太陽電池素子の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106816484A (zh) * | 2015-12-02 | 2017-06-09 | 三星Sdi株式会社 | 形成电极的方法、由其制造的电极以及太阳能电池 |
CN106816484B (zh) * | 2015-12-02 | 2019-12-10 | 三星Sdi株式会社 | 形成电极的方法、由其制造的电极以及太阳能电池 |
CN105590663A (zh) * | 2016-01-07 | 2016-05-18 | 清华大学 | 无铅无铋导电银浆、银栅线的制备方法及硅太阳能电池 |
CN109314149A (zh) * | 2016-07-14 | 2019-02-05 | 亚特比目株式会社 | 太阳电池及太阳电池的制造方法 |
CN109539604A (zh) * | 2019-01-17 | 2019-03-29 | 河北道荣新能源科技有限公司 | 薄膜光伏发电耦合选择性吸收涂层结构 |
CN109631353A (zh) * | 2019-01-17 | 2019-04-16 | 河北道荣新能源科技有限公司 | 薄膜光伏发电耦合选择性吸收涂层制法及其集热管制法 |
Also Published As
Publication number | Publication date |
---|---|
CN102428567B (zh) | 2015-01-07 |
JP5898065B2 (ja) | 2016-04-06 |
WO2010135496A1 (en) | 2010-11-25 |
US9054239B2 (en) | 2015-06-09 |
KR20120012989A (ko) | 2012-02-13 |
EP2433304A1 (en) | 2012-03-28 |
JP2012527780A (ja) | 2012-11-08 |
US20130276881A1 (en) | 2013-10-24 |
TWI504011B (zh) | 2015-10-11 |
TW201110398A (en) | 2011-03-16 |
KR101322072B1 (ko) | 2013-10-28 |
US8486826B2 (en) | 2013-07-16 |
US20100294359A1 (en) | 2010-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102428567B (zh) | 在硅片正面上形成栅极的方法 | |
CN102428568A (zh) | 在硅片正面上形成栅极的方法 | |
US8227292B2 (en) | Process for the production of a MWT silicon solar cell | |
CN102365689A (zh) | 金属浆料及其在硅太阳能电池生产中的用途 | |
US9054242B2 (en) | Process for the production of a MWT silicon solar cell | |
CN102640231A (zh) | 用于形成钝化发射极的银背面电极以及形成背面接触硅太阳能电池的方法 | |
US20110240124A1 (en) | Metal pastes and use thereof in the production of silicon solar cells | |
CN102365688A (zh) | 金属浆料及其在硅太阳能电池生产中的用途 | |
CN102428566A (zh) | 在硅片正面上形成栅极的方法 | |
CN103918089A (zh) | 用于生产lfc-perc硅太阳能电池的方法 | |
US20130061918A1 (en) | Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell | |
CN102656645A (zh) | 在非织构化硅片的正面上形成电极的方法 | |
CN103119660A (zh) | 用于形成硅太阳能电池的银背面阳极的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201229 Address after: Delaware, USA Patentee after: DuPont Electronics Address before: Delaware, USA Patentee before: E.I. Nemours DuPont |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210425 Address after: Delaware, USA Patentee after: Sun paster Co.,Ltd. Address before: Delaware, USA Patentee before: DuPont Electronics |
|
TR01 | Transfer of patent right | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20120425 Assignee: Jiangsu SOTE Electronic Material Co.,Ltd. Assignor: Sun paster Co.,Ltd. Contract record no.: X2021990000521 Denomination of invention: Method of forming gate on front surface of silicon wafer Granted publication date: 20150107 License type: Common License Record date: 20210826 |
|
EE01 | Entry into force of recordation of patent licensing contract |