CN106816484A - 形成电极的方法、由其制造的电极以及太阳能电池 - Google Patents
形成电极的方法、由其制造的电极以及太阳能电池 Download PDFInfo
- Publication number
- CN106816484A CN106816484A CN201610728653.0A CN201610728653A CN106816484A CN 106816484 A CN106816484 A CN 106816484A CN 201610728653 A CN201610728653 A CN 201610728653A CN 106816484 A CN106816484 A CN 106816484A
- Authority
- CN
- China
- Prior art keywords
- electrode
- frit
- forming
- composition
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000203 mixture Substances 0.000 claims abstract description 61
- 239000000843 powder Substances 0.000 claims abstract description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011574 phosphorus Substances 0.000 claims abstract description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 21
- 229910052714 tellurium Inorganic materials 0.000 claims description 13
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 13
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- -1 isobutyric acids Ester Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- RNJWWPJDKFJOGY-UHFFFAOYSA-M 13465-96-8 Chemical compound [Ag+].[O-]P(=O)=O RNJWWPJDKFJOGY-UHFFFAOYSA-M 0.000 description 1
- JCTXKRPTIMZBJT-UHFFFAOYSA-N 2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)C(C)(C)CO JCTXKRPTIMZBJT-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical class CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- FUECIDVNGAUMGJ-UHFFFAOYSA-N acetic acid;2-(2-butoxyethoxy)ethanol Chemical class CC(O)=O.CCCCOCCOCCO FUECIDVNGAUMGJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- FUGIIBWTNARRSF-UHFFFAOYSA-N decane-5,6-diol Chemical compound CCCCC(O)C(O)CCCC FUGIIBWTNARRSF-UHFFFAOYSA-N 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000320 mechanical mixture Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229940032007 methylethyl ketone Drugs 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000010022 rotary screen printing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- VPKAOUKDMHJLAY-UHFFFAOYSA-J tetrasilver;phosphonato phosphate Chemical compound [Ag+].[Ag+].[Ag+].[Ag+].[O-]P([O-])(=O)OP([O-])([O-])=O VPKAOUKDMHJLAY-UHFFFAOYSA-J 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/16—Silica-free oxide glass compositions containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/08—Metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
本发明提供一种形成电极的方法、由其制造的电极以及太阳能电池。形成电极的方法包含涂布包含导电粉末、不含银(Ag)和磷(P)的第一玻璃料以及有机媒剂的用于形成第一电极的组合物，接着将其干燥以形成指状电极图案；涂布包含导电粉末、包含银(Ag)和磷(P)的第二玻璃料以及有机媒剂的用于形成第二电极的组合物，接着将其干燥以形成汇流电极图案；以及烧制所得物。所述形成电极的方法可通过在不增加串联电阻的情况下最多地增加电极的厚度来提高太阳能电池的效率。
Description
技术领域
公开一种形成电极的方法、由其制造的电极以及太阳能电池。
背景技术
太阳能电池可使用可将日光的光子转化成电的p-n结的光生伏特效应产生电能。在太阳能电池中，前电极和背电极可分别形成于具有p-n结的半导体衬底(半导体芯片)的前表面和后表面上。接着，可通过进入衬底的日光诱导p-n结的光生伏特效应，并且通过p-n结的光生伏特效应产生的电子可经由电极提供流向外部的电流。
太阳能电池的电极可通过涂布、图案化以及烧制电极组合物而按预定图案形成于芯片表面上。
太阳能电池可通过减少降低效率的因素而具有高效率。太阳能电池的效率可能因为光损失、电子和空穴的重组损失以及通过电阻组件的损失而大为地降低，且本文中，光损失可由不使用100％的进入太阳能电池的入射光引起且可主要由归因于前电极的阴影损失(shadow loss)引起。
因此，研究通过最多地减少前电极的厚度来增加光吸收速率的方法，但当仅减少厚度时，具有由电极图案的线路中断所致的增加串联电阻的问题。
发明内容
实施例提供一种形成能够通过在不增加串联电阻(Rs)的情况下使电极图案的厚度最小化的提高太阳能电池的效率的电极的方法。
实施例提供使用所述方法制造的电极。
实施例提供包含所述电极的太阳能电池。
根据一个实施例，形成电极的方法包含涂布用于形成第一电极的组合物，接着将其干燥以形成指状电极图案，用于形成第一电极的组合物包含导电粉末、第一玻璃料以及有机媒剂，第一玻璃料不含银(Ag)和磷(P)；
涂布用于形成第二电极的组合物，接着将其干燥以形成汇流电极图案，用于形成第二电极的组合物包含导电粉末、第二玻璃料以及有机媒剂，第二玻璃料包含银(Ag)和磷(P)；以及
烧制所得物。
用于形成第一电极的组合物可包含60重量％到95重量％的导电粉末、0.5重量％到20重量％的第一玻璃料以及余量的有机媒剂。
用于形成第二电极的组合物可包含60重量％到95重量％的导电粉末；0.5重量％到20重量％的第二玻璃料以及余量的有机媒剂。
第二玻璃料可包含按其总量计0.1摩尔％到5摩尔％的银(Ag)和0.1摩尔％到3摩尔％的磷(P)。
第二玻璃料可还包含碲(Te)和锂(Li)。
第二玻璃料可包含30摩尔％到60摩尔％的碲(Te)和3摩尔％到20摩尔％的锂(Li)。
第二玻璃料可包含摩尔比为80∶20到95∶5的碲(Te)和锂(Li)。
第二玻璃料可更包含选自铋(Bi)、铅(Pb)以及其组合的组分。
另一实施例提供通过形成电极的方法制造的电极。
另一个实施例提供一种包含所述电极的太阳能电池。
形成电极的方法可通过在不增加串联电阻的情况下最多地增加电极的厚度来提高太阳能电池的效率。
附图说明
通过参看附图详细描述示例性实施例，特征将对于本领域的技术人员变得清楚，在附图中：
图1为显示根据一个实施例的太阳能电池结构的示意图；
图2为显示根据实例1的前电极的扫描电子显微图(SEM)；
图3为显示根据比较例1的前电极的扫描电子显微图。
具体实施方式
将参考附图在下文中更加全面地描述本发明，在这些附图中示出了本发明的例示性实施例。如本领域的技术人员将认识到，可以各种不同方式来修改所描述的实施例，这些修改均在不脱离本发明的精神或范围的情况下进行。
在附图中，为清楚起见放大了层、膜、面板、区域等的厚度。在本说明书通篇中相同的图式元件符号表示相同的元件。应理解，当如层、膜、区域或衬底的元件被称作在另一元件“上”时，其可直接在另一元件上或还可存在插入元件。相比之下，当元件被称作“直接在”另一元件“上”时，不存在插入元件。
如本文所用，术语“其组合”是指两种或大于两种组分的混合物、掺合物或固溶体化合物。
如本文所用，术语“不含有”是指包括的对应组分的量小于约0.1摩尔％。
根据一个实施例，形成电极的方法包含涂布包含导电粉末、不含银(Ag)和磷(P)的第一玻璃料以及有机媒剂的用于形成第一电极的组合物，接着将其干燥以形成指状电极图案，
涂布包含导电粉末、包含银(Ag)和磷(P)的第二玻璃料以及有机媒剂的用于形成第二电极的组合物，接着将其干燥以形成汇流电极图案，以及
烧制所得物。
在下文中，详细说明一种形成电极的方法。
[制备用于形成第一电极和第二电极的组合物]
用于形成第一电极的组合物可通过混合导电粉末、不含银(Ag)和磷(P)的第一玻璃料以及有机媒剂制备，且用于形成第二电极的组合物可通过混合导电粉末、包含银(Ag)和磷(P)的第二玻璃料以及有机媒剂制备。
导电粉末可为金属粉末。所述金属粉末可包含银(Ag)、金(Au)、钯(Pd)、铂(Pt)、钌(Ru)、铑(Rh)、锇(Os)、铱(Ir)、铼(Re)、钛(Ti)、铌(Nb)、钽(Ta)、铝(Al)、铜(Cu)、镍(Ni)、钼(Mo)、钒(V)、锌(Zn)、镁(Mg)、钇(Y)、钴(Co)、锆(Zr)、铁(Fe)、钨(W)、锡(Sn)、铬(Cr)、锰(Mn)等。
所述导电粉末的粒度(particle size)可为纳米级或微米级。举例来说，所述导电粉末的粒度可为几十纳米到几百纳米或几微米到几十微米。在实施例中，所述导电粉末可为具有不同粒度的两种或大于两种类型的银粉的混合物。
导电粉末可具有球形、薄片形或非晶形的粒子形状。所述导电粉末的平均粒径(D50)可为0.1微米到10微米，例如0.5微米到5微米。平均粒径可在室温(20℃到25℃)下持续3分钟经由超声波处理将导电粉末分散于异丙醇(isopropyl alcohol；IPA)中之后，使用例如型号1064D(西莱斯有限公司(CILAS Co.，Ltd.))设备来测量。在这一平均粒径范围内，所述组合物可提供低接触电阻和低线路电阻。
按用于形成第一电极的组合物或用于形成第二电极的组合物中的每一者的100重量％计，导电粉末的存在量可为60重量％到95重量％。在一个实施例中，所述导电粉末的存在量可为70重量％到90重量％。在此范围内，可防止转化效率由于电阻增加而退化，并且还可防止由有机媒剂的相对减少导致的硬浆料物形成。
第一玻璃料和第二玻璃料可通过蚀刻抗反射层和熔化导电粉末用以增强导电粉末与衬底之间的粘着且在发射极区中形成银晶体颗粒以减少用于形成电极的第一组合物和第二组合物的烧制工艺期间的接触电阻。在烧制工艺期间，第一玻璃料和第二玻璃料可经软化且可降低烧制温度。
第一玻璃料不含银(Ag)和磷(P)组分。当第一玻璃料包含银(Ag)和磷(P)组分时，可能增加串联电阻。
第一玻璃料可包含选自以下的至少一种元素：铅(Pb)、碲(Te)、铋(Bi)、锂(Li)、磷(P)、锗(Ge)、镓(Ga)、铈(Ce)、铁(Fe)、硅(Si)、锌(Zn)、钨(W)、镁(Mg)、铯(Cs)、锶(Sr)、钼(Mo)、钛(Ti)、锡(Sn)、铟(In)、钒(V)、钡(Ba)、镍(Ni)、铜(Cu)、钠(Na)、钾(K)、砷(As)、钴(Co)、锆(Zr)、锰(Mn)以及铝(A1)。
在一个实施例中，第一玻璃料可为包含铋(Bi)和碲(Te)组分的玻璃料。
按第一玻璃料的总量计，第一玻璃料可包含20摩尔％到80摩尔％范围内的铋(Bi)组分和20摩尔％到80摩尔％范围内的碲(Te)组分。在所述范围内，可同时确保太阳能电池的极好转化效率和电极图案的粘着强度。
第二玻璃料包含银(Ag)和磷(P)组分，且因此可使由电极与衬底之间的不充分接触和串联电阻(Rs)增加产生的开路电压(Voc)损失最小化。另外，串联电阻(Rs)的增加可通过由于衍生自第二玻璃料的Ag离子提高电极的导电性而最小化。
第二玻璃料可包含0.1摩尔％到5摩尔％，例如0.1摩尔％到3摩尔％范围内的银(Ag)和0.1摩尔％到3摩尔％，例如0.1摩尔％到1.5摩尔％范围内的磷(P)。在所述范围内，由电极与衬底之间的不充分接触和串联电阻(Rs)增加产生的开路电压(Voc)损失可最小化。
第二玻璃料中的银(Ag)和磷(P)组分可衍生自偏磷酸银(AgPO3)、正磷酸银(Ag3PO4)、焦磷酸银(Ag4P2O7)、六氟磷酸以及其组合。
第二玻璃料可包含选自以下的至少一种元素：铅(Pb)、碲(Te)、铋(Bi)、锂(Li)、磷(P)、锗(Ge)、镓(Ga)、铈(Ce)、铁(Fe)、硅(Si)、锌(Zn)、钨(W)、镁(Mg)、铯(Cs)、锶(Sr)、钼(Mo)、钛(Ti)、锡(Sn)、铟(In)、钒(V)、钡(Ba)、镍(Ni)、铜(Cu)、钠(Na)、钾(K)、砷(As)、钴(Co)、锆(Zr)、锰(Mn)以及铝(Al)。
在一个实施例中，第二玻璃料可为包含碲(Te)和锂(Li)组分的玻璃料。
按第二玻璃料的总量计，第二玻璃料可包含30摩尔％到60摩尔％范围内，例如35摩尔％到55摩尔％范围内的碲(Te)组分和3摩尔％到20摩尔％范围内，例如5摩尔％到15摩尔％范围内的锂(Li)组分。
在第二玻璃料中，碲(Te)和锂(Li)的摩尔比可为80∶20到95∶5。在所述范围内，可同时确保太阳能电池的极好效率和电极图案的粘着强度。
另外，除银(Ag)、磷(P)、碲(Te)以及锂(Li)以外，第二玻璃料可更包含选自以下的元素：铋(Bi)、铅(Pb)以及其组合。
第一玻璃料和第二玻璃料可通过任何适合方法由元素的氧化物制备。举例来说，元素的氧化物可通过以下方式获得：以预定比率混合金属元素的氧化物、熔化混合物、对所得物进行淬火且接着粉碎经淬火的产物。混合可使用球磨机或行星式磨机进行。熔化可在700℃到1300℃下进行，并且淬火可在室温(24℃到25℃)下进行。粉碎可使用(但不限于)盘磨机或行星式磨机进行。
第一玻璃料和第二玻璃料可各自具有0.1微米到10微米的平均粒径(D50)。
第一玻璃料和第二玻璃料可具有球形或非晶形。
按用于形成第一电极的组合物的总量的100重量％计，第一玻璃料可在0.5重量％到20重量％的范围被包含，且按用于形成第二电极的组合物的总量的100重量％计，第二玻璃料可在0.5重量％到20重量％的范围被包含。在所述范围内，可在不劣化电极的电特性的情况下改进电极图案的粘着强度。
有机媒剂可经由与电极组合物的无机组分机械混合赋予用于形成第一电极的组合物和用于形成第二电极的组合物就印刷来说适合的粘度和流变学特征。有机媒剂包含有机粘合剂和溶剂。
有机粘合剂可选自丙烯酸酯类树脂或纤维素类树脂，并且乙基纤维素是通常所用的树脂。举例来说，有机粘合剂可选自以下各者：乙基羟乙基纤维素、硝化纤维素、乙基纤维素与酚醛树脂的混合物、醇酸树脂、酚类树脂、丙烯酸酯类树脂、二甲苯类树脂、聚丁烯类树脂、聚酯类树脂、脲类树脂、三聚氰胺类树脂、乙酸乙烯酯类树脂、木松香或醇的聚甲基丙烯酸酯。
有机粘合剂的重量平均分子量(Mw)可为30,000克/摩尔到200,000克/摩尔，例如40,000克/摩尔到150,000克/摩尔。当重量平均分子量(Mw)在所述范围内时，可获得在可印刷性方面极好的效果。
溶剂可例如为己烷、甲苯、泰萨醇(Texanol)(2，2，4-三甲基-1，3-戊二醇单异丁酸酯)、甲基溶纤剂、乙基溶纤剂、环己酮、丁基溶纤剂、脂肪醇、丁基卡必醇(二乙二醇单丁基醚)、二丁基卡比醇(二乙二醇二丁醚)、丁基卡必醇乙酸酯(二乙二醇单丁基醚乙酸酯)、丙二醇单甲基醚、己二醇、萜品醇、甲基乙基酮、苯甲醇、γ丁内酯、乳酸乙酯或其组合。
有机媒剂可以余量存在，例如按用于形成第一电极的组合物或用于形成第二电极的组合物的每100重量％计的1重量％到30重量％，例如5重量％到15重量％存在。在所述范围内，可确保极好的连续印刷。
用于形成第一电极的组合物或用于形成第二电极的组合物可按需要还包含除以上构成元素以外的典型添加剂，以增强流动特性、加工特性以及稳定性。添加剂可包含表面处理剂、分散剂、触变剂、塑化剂、粘度稳定剂、消泡剂、颜料、紫外(UV)稳定剂、抗氧化剂、偶合剂等。这些添加剂可单独使用或以混合物形式使用。按用于形成第一电极的组合物或用于形成第二电极的组合物的每100重量％计，这些添加剂的存在量可为0.1重量％到5重量％。这一量可按需要改变。
[制造电极]
用于形成第一电极的组合物在衬底表面上涂布为预定图案且经干燥，形成指状电极图案。
随后，用于形成第二电极的组合物涂布于具有指状电极图案的衬底上且经干燥，形成汇流电极图案。
用于形成第一电极和第二电极的组合物可以各种方法涂布，如网板印刷、凹版胶印、滚筒筛印刷、剥离(lift-off)等，但本发明不限于此。
由用于形成第一电极和第二电极的组合物形成的电极图案经烧制而获得电极。烧制可在400℃到980℃，例如700℃到980℃下进行。电极可具有0.2到0.35的纵横比和15微米到30微米的厚度。
根据另一实施例，提供包含所述电极的太阳能电池。参看图1，描述根据一个实施例的太阳能电池。
图1是显示根据一个实施例的太阳能电池结构的示意图。
参看图1，背电极210和前电极230是通过将电极组成物印刷在包含p层(或n层)101和n层(或p层)102作为发射极的衬底100上并且接着对其进行烧制来形成。
举例来说，将电极组合物印刷涂布在衬底100的背侧上并且在200℃到400℃下对其进行热处理10秒到60秒以进行用于背电极的先前制备步骤。
前电极230可通过如下预处理：涂布用于形成第一电极的组合物且将其干燥以形成指状电极图案，且接着涂布用于形成第二电极的组合物且将其干燥以形成汇流电极图案。
接着，背电极210和前电极230可经由在400℃到980℃，例如700℃到980℃下烧制30秒到210秒形成。
提供以下实例和比较例以便突出一个或多个实施例的特征，但应理解，实例和比较例不应理解为限制实施例的范围，比较例也不应理解为在实施例的范围之外。此外，应理解，实施例不限于实例和比较例中所描述的具体细节。
制备实例：制备用于形成电极的组合物
制备实例1
如下制备用于形成电极的组合物：在60℃下将1重量％乙基纤维素(陶氏化学公司(Dow Chemical Company)，STD4)充分溶解于6.7重量％萜品醇(日本萜烯(NipponTerpine))中，向其中添加90重量％平均粒径为2.0微米的球形银粉(多瓦高科技有限公司(Dowa Hightech CO.LTD.)，AG-5-11F，3-11F)和2.3重量％平均粒径为2.0微米的玻璃料A(表1中)，且将其均匀混合，且用三辊捏合机混合分散混合物。
制备实例2
根据与制备实例1相同的方法制备用于形成电极的组合物，除了使用表1中的玻璃料B代替玻璃料A。
制备实例3
根据与制备实例1相同的方法制备用于形成电极的组合物，除了使用表1中的玻璃料C代替玻璃料A。
制备实例4
根据与制备实例1相同的方法制备用于形成电极的组合物，除了使用表1中的玻璃料D代替玻璃料A。
(表1)
(单位：摩尔％)
| Ag | P | Te | Bi | Zn | Li | Si | W | Mg | |
| 玻璃料A | - | - | 43.9 | 8.6 | 14.4 | 12.2 | 11.8 | 9.1 | - |
| 玻璃料B | - | - | 58.8 | 5.0 | 14.2 | 12.8 | - | 9.2 | - |
| 玻璃料C | 0.8 | 0.4 | 48.6 | 4.4 | 12.5 | 12.6 | - | 6.2 | 14.5 |
| 玻璃料D | 1.6 | 0.8 | 53.1 | 4.8 | 13.7 | 12.7 | - | 5.4 | 7.9 |
(注：表1的含量(摩尔％)是基于包括对应元素的氧化物)
制造太阳能电池
比较例1
在通过纹理化多结晶芯片(掺杂有硼的p型芯片)的前侧获得的多结晶芯片的背侧上印刷铝浆，形成在上面具有POCl3的n+层，和具有氮化硅(SiNx：H)的抗反射涂层，接着在300℃下将其干燥，且接着在多结晶芯片的前侧上丝网印刷根据制备实例1的用于形成电极的组合物，接着在300℃下将其干燥以形成指状电极和汇流电极图案。在带型炉中在940℃下烧制在以上工艺中制造的电池以获得测试电池。
比较例2
根据与比较例1相同的方法制造测试电池，除了使用根据制备实例2的用于形成电极的组合物代替根据制备实例1的用于形成电极的组合物以形成指状电极和汇流电极图案。
比较例3
根据与比较例1相同的方法制造测试电池，除了使用根据制备实例3的用于形成电极的组合物代替根据制备实例1的用于形成电极的组合物以形成指状电极和汇流电极图案。
实例1
在通过纹理化芯片(掺杂有硼的p型芯片)的前侧获得的多结晶芯片的背侧上印刷铝浆，形成在上面具有POCl3的n+层，和具有氮化硅(SiNx：H)的抗反射涂层，接着在300℃下将其干燥，且接着在多结晶芯片的前侧上丝网印刷根据制备实例1的用于形成电极的组合物，接着在300℃下将其干燥以形成指状电极图案。在经干燥的指状电极图案上，丝网印刷根据制备实例3的用于形成电极的组合物且在300℃下干燥以形成汇流电极图案。在带型炉中在940℃下烧制在以上工艺中获得的电池以制造测试电池。
实例2
根据与实例1相同的方法制造测试电池，除了使用根据制备实例4的用于形成电极的组合物代替根据制备实例3的用于形成电极的组合物。
经由扫描电子显微镜检查根据比较例1到比较例3和实例1和实例2的烧制之后的电极图案。代表性地，图2为显示根据本发明的实例1的前电极的扫描电子显微图且图3为显示根据比较例1的前电极的扫描电子显微图。
参看图2和图3，实例1的前电极具有23微米的厚度和67微米的线宽，且比较例1的前电极具有18微米的厚度和75微米的线宽。因此，实例1的电极较厚且以比比较例1的电极高的纵横比图案化。
通过使用太阳能电池效率测量设备(帕山(Pasan)CT-801，MB系统有限公司(MBSystems Co.Ltd.))测量根据比较例1到比较例3和实例1和实例2的测试电池的电特性(Isc、Voc、Rs、填充因数(FF，％)、转化效率(Eff.，％))。结果提供在表2中。
(表2)
| FF(％) | Eff.(％) | ||||
| 比较例1 | 8.716 | 626.5 | 0.0058 | 77.49 | 17.37 |
| 比较例2 | 8.710 | 626.3 | 0.0059 | 77.30 | 17.35 |
| 比较例3 | 8.726 | 625.7 | 0.0063 | 76.78 | 17.27 |
| 实例1 | 8.720 | 627.1 | 0.0056 | 77.52 | 17.41 |
| 实例2 | 8.706 | 627.2 | 0.0058 | 77.47 | 17.39 |
参看表2，相较于根据比较例1到比较例3的太阳能电池，根据实例1和实例2的太阳能电池显示全部令人满意的电特性(Voc、Rs、填充因数(FF，％)、转化效率(Eff.，％))。确切地说，通过使用根据比较例3的包含含银(Ag)和磷(P)的玻璃料的用于形成电极的组合物的指状电极和汇流电极图案展现减少的Voc和增加的Rs和因此降低的效率。
实例实施例已在本文中公开，并且尽管采用特定术语，但这些术语只是在一般性和描述性意义上使用并解释，而非为了限制的目的。在一些情况下，如本领域的技术人员自提交本申请案起将显而易见的是，除非另外具体指出，否则结合具体实施例描述的特点/特征和/或元件可单独使用或与结合其它实施例描述的特点、特征和/或元件组合使用。因此，本领域的技术人员应理解，在不脱离如以下权利要求书阐述的本发明的精神和范围的情况下可以对形式和细节作出各种改变。
Claims (10)
1.一种形成电极的方法，包括：
涂布用于形成第一电极的组合物，接着将其干燥以形成指状电极图案，所述用于形成第一电极的组合物包含导电粉末、第一玻璃料以及有机媒剂，所述第一玻璃料不含银和磷；
涂布用于形成第二电极的组合物，接着将其干燥以形成汇流电极图案，所述用于形成第二电极的组合物包含导电粉末、第二玻璃料以及有机媒剂，所述第二玻璃料包含银和磷；以及
烧制所得物。
2.根据权利要求1所述的形成电极的方法，其中所述用于形成第一电极的组合物包括60重量％到95重量％的所述导电粉末、0.5重量％到20重量％的所述第一玻璃料以及余量的所述有机媒剂。
3.根据权利要求1所述的形成电极的方法，其中所述用于形成第二电极的组合物包括60重量％到95重量％的所述导电粉末、0.5重量％到20重量％的所述第二玻璃料以及余量的所述有机媒剂。
4.根据权利要求1所述的形成电极的方法，其中按所述第二玻璃料的总量计，所述第二玻璃料包括0.1摩尔％到5摩尔％的银和0.1摩尔％到3摩尔％的磷。
5.根据权利要求1所述的形成电极的方法，其中所述第二玻璃料更包括碲和锂。
6.根据权利要求5所述的形成电极的方法，其中所述第二玻璃料包括30摩尔％到60摩尔％的碲和3摩尔％到20摩尔％的锂。
7.根据权利要求5所述的形成电极的方法，其中所述第二玻璃料包括摩尔比为80∶20到95∶5的碲和锂。
8.根据权利要求5所述的形成电极的方法，其中所述第二玻璃料还包括选自铋、铅以及其组合的组分。
9.一种用于太阳能电池的电极，其是根据权利要求1到8中任一项所述的形成电极的方法制造。
10.一种太阳能电池，包括根据权利要求9所述的用于太阳能电池的电极。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0170736 | 2015-12-02 | ||
| KR1020150170736A KR101859017B1 (ko) | 2015-12-02 | 2015-12-02 | 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106816484A true CN106816484A (zh) | 2017-06-09 |
| CN106816484B CN106816484B (zh) | 2019-12-10 |
Family
ID=58798605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610728653.0A Active CN106816484B (zh) | 2015-12-02 | 2016-08-25 | 形成电极的方法、由其制造的电极以及太阳能电池 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9705014B2 (zh) |
| KR (1) | KR101859017B1 (zh) |
| CN (1) | CN106816484B (zh) |
| TW (1) | TWI599058B (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109215839A (zh) * | 2017-07-06 | 2019-01-15 | 三星Sdi株式会社 | 太阳能电池电极的组合物及使用其制作的太阳能电池电极 |
| CN109215834A (zh) * | 2017-07-06 | 2019-01-15 | 三星Sdi株式会社 | 形成太阳电池电极的组合物及使用其制备的太阳电池电极 |
| KR20200040626A (ko) * | 2018-10-10 | 2020-04-20 | 삼성에스디아이 주식회사 | 태양전지 전극 형성 방법, 이로부터 제조된 태양전지 전극 및 태양전지 |
| CN114974649A (zh) * | 2021-02-25 | 2022-08-30 | 常州聚和新材料股份有限公司 | 太阳能电池电极及其形成方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6876537B2 (ja) * | 2017-06-19 | 2021-05-26 | 日本山村硝子株式会社 | ステンレス鋼製真空二重容器封着用無鉛ガラス組成物 |
| KR102406747B1 (ko) * | 2018-12-21 | 2022-06-08 | 창저우 퓨전 뉴 머티리얼 씨오. 엘티디. | 태양전지 전극 형성 방법 및 태양전지 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102428567A (zh) * | 2009-05-20 | 2012-04-25 | E.I.内穆尔杜邦公司 | 在硅片正面上形成栅极的方法 |
| KR20150060412A (ko) * | 2013-11-26 | 2015-06-03 | 엘지전자 주식회사 | 태양 전지 |
| CN104733074A (zh) * | 2013-12-20 | 2015-06-24 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物和使用其制备的电极 |
| CN104838448A (zh) * | 2012-12-29 | 2015-08-12 | 第一毛织株式会社 | 形成太阳能电池电极用的组成物及使用该组成物所制电极 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3050064B2 (ja) | 1994-11-24 | 2000-06-05 | 株式会社村田製作所 | 導電性ペースト、この導電性ペーストからなるグリッド電極が形成された太陽電池及びその製造方法 |
| CN102942883B (zh) | 2006-04-26 | 2015-08-26 | 日立化成株式会社 | 粘接带及使用其的太阳能电池模块 |
| CN101821816A (zh) | 2007-10-18 | 2010-09-01 | E.I.内穆尔杜邦公司 | 无铅导电组合物以及用于制造半导体装置的方法:焊剂材料 |
| JP4986945B2 (ja) | 2008-07-25 | 2012-07-25 | 三洋電機株式会社 | 太陽電池の製造方法 |
| EP2398061B1 (en) | 2010-06-21 | 2020-04-29 | Lg Electronics Inc. | Solar cell |
| KR20120077439A (ko) | 2010-12-30 | 2012-07-10 | 주식회사 동진쎄미켐 | 태양전지의 전극 형성용 페이스트 조성물 및 이를 이용한 전극 |
| TWI443852B (zh) | 2011-03-24 | 2014-07-01 | Gintech Energy Corp | 太陽能電池形成方法 |
| EP2764000A4 (en) | 2011-08-26 | 2015-10-14 | Heraeus Precious Metals North America Conshohocken Llc | FIRE ALUMINUM PASTE FOR SINX AND BETTER BSF EDUCATION |
| KR101149891B1 (ko) | 2011-12-09 | 2012-06-11 | 한화케미칼 주식회사 | 태양전지 및 이의 제조방법 |
| CN103377753B (zh) | 2012-04-17 | 2017-07-14 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于导电糊组合物的无机反应体系 |
| JP2014116261A (ja) | 2012-12-12 | 2014-06-26 | Kuraray Co Ltd | 半導体電極、光電変換素子、および太陽電池 |
| KR20150054352A (ko) * | 2013-11-12 | 2015-05-20 | 엘지전자 주식회사 | 유리 프릿 조성물 및 이를 포함하는 태양 전지 전극용 페이스트 조성물, 그리고 태양 전지 모듈 |
| TWI532062B (zh) | 2015-04-27 | 2016-05-01 | Giga Solar Materials Corp | Conductive pulp and a method of manufacturing the same |
| KR102272433B1 (ko) * | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101680036B1 (ko) * | 2015-07-07 | 2016-12-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
-
2015
- 2015-12-02 KR KR1020150170736A patent/KR101859017B1/ko active IP Right Grant
-
2016
- 2016-08-11 TW TW105125528A patent/TWI599058B/zh active
- 2016-08-17 US US15/238,797 patent/US9705014B2/en active Active
- 2016-08-25 CN CN201610728653.0A patent/CN106816484B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102428567A (zh) * | 2009-05-20 | 2012-04-25 | E.I.内穆尔杜邦公司 | 在硅片正面上形成栅极的方法 |
| CN104838448A (zh) * | 2012-12-29 | 2015-08-12 | 第一毛织株式会社 | 形成太阳能电池电极用的组成物及使用该组成物所制电极 |
| KR20150060412A (ko) * | 2013-11-26 | 2015-06-03 | 엘지전자 주식회사 | 태양 전지 |
| CN104733074A (zh) * | 2013-12-20 | 2015-06-24 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物和使用其制备的电极 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109215839A (zh) * | 2017-07-06 | 2019-01-15 | 三星Sdi株式会社 | 太阳能电池电极的组合物及使用其制作的太阳能电池电极 |
| CN109215834A (zh) * | 2017-07-06 | 2019-01-15 | 三星Sdi株式会社 | 形成太阳电池电极的组合物及使用其制备的太阳电池电极 |
| US10570054B2 (en) | 2017-07-06 | 2020-02-25 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrode and electrode prepared using the same |
| KR20200040626A (ko) * | 2018-10-10 | 2020-04-20 | 삼성에스디아이 주식회사 | 태양전지 전극 형성 방법, 이로부터 제조된 태양전지 전극 및 태양전지 |
| CN111048601A (zh) * | 2018-10-10 | 2020-04-21 | 三星Sdi株式会社 | 太阳能电池电极与其制备方法以及包含其的太阳能电池 |
| KR102316662B1 (ko) | 2018-10-10 | 2021-10-25 | 창저우 퓨전 뉴 머티리얼 씨오. 엘티디. | 태양전지 전극 형성 방법, 이로부터 제조된 태양전지 전극 및 태양전지 |
| CN111048601B (zh) * | 2018-10-10 | 2022-05-24 | 上海匠聚新材料有限公司 | 太阳能电池电极与其制备方法以及包含其的太阳能电池 |
| CN114974649A (zh) * | 2021-02-25 | 2022-08-30 | 常州聚和新材料股份有限公司 | 太阳能电池电极及其形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170162727A1 (en) | 2017-06-08 |
| TWI599058B (zh) | 2017-09-11 |
| US9705014B2 (en) | 2017-07-11 |
| KR20170064805A (ko) | 2017-06-12 |
| KR101859017B1 (ko) | 2018-05-17 |
| CN106816484B (zh) | 2019-12-10 |
| TW201721890A (zh) | 2017-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106816484A (zh) | 形成电极的方法、由其制造的电极以及太阳能电池 | |
| KR101648253B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
| US8815127B2 (en) | Paste composition for solar cell electrode, electrode fabricated using the same, and solar cell including the same | |
| US9153355B2 (en) | Paste composition for a solar cell electrode, electrode fabricated using the same, and solar cell including the electrode | |
| US9608137B2 (en) | Composition for solar cell electrodes and electrode fabricated using the same | |
| KR101557536B1 (ko) | 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 | |
| KR101648245B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
| KR101600659B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
| TWI655784B (zh) | 用於太陽能電池的前電極和包括其的太陽能電池 | |
| KR102406747B1 (ko) | 태양전지 전극 형성 방법 및 태양전지 | |
| KR20210076308A (ko) | 태양전지 전극 및 이의 형성 방법 | |
| US9966480B2 (en) | Electrode composition, electrode manufactured using the same, and solar cell | |
| KR101693078B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
| CN107068775B (zh) | 用于形成电极的组合物、使用其制成的电极及太阳能电池 | |
| US10505056B2 (en) | Composition for forming electrode, electrode manufactured using the same and solar cell | |
| CN114975644A (zh) | 选择性发射极太阳能电池电极及包含其的太阳能电池 | |
| KR20210158738A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 형성된 태양전지 전극 | |
| KR20210109728A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 형성된 태양전지 전극 | |
| KR20210069788A (ko) | 선택적 에미터 태양전지 전극 및 이를 포함한 선택적 에미터 태양전지 | |
| KR20200106708A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 태양전지 전극 | |
| KR20160121474A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210316 Address after: 88 Xinzhu 2nd Road, Xinbei District, Changzhou City, Jiangsu Province Patentee after: CHANGZHOU JUHE NEW MATERIAL Co.,Ltd. Address before: South Korea Gyeonggi Do Yongin Giheung tribute District Road No. 150-20 Patentee before: Samsung SDI Co.,Ltd. |
|
| TR01 | Transfer of patent right |