WO2012155984A1 - Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen - Google Patents
Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen Download PDFInfo
- Publication number
- WO2012155984A1 WO2012155984A1 PCT/EP2011/058186 EP2011058186W WO2012155984A1 WO 2012155984 A1 WO2012155984 A1 WO 2012155984A1 EP 2011058186 W EP2011058186 W EP 2011058186W WO 2012155984 A1 WO2012155984 A1 WO 2012155984A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic
- cavity
- optoelectronic device
- connection carrier
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/407—Optical elements or arrangements indirectly associated with the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present application relates to an optoelectronic device having at least one optoelectronic component and to a method for producing optoelectronic components
- Characteristics distinguishes. Furthermore, a method is to be specified with which optoelectronic devices are simplified and reliable to produce.
- the optoelectronic device has an optoelectronic component which is provided for receiving and / or for generating radiation.
- Optoelectronic device may in particular comprise a further optoelectronic component.
- the further optoelectronic component may in particular comprise a further optoelectronic component.
- Optoelectronic component can form an emitter-detector pair with the optoelectronic component.
- the Optoelectronic component and / or optionally the further optoelectronic component can be embodied in particular as an unhoused semiconductor chip. That is, the optoelectronic device itself is free of one
- the optoelectronic device has a connection carrier to which the optoelectronic component and optionally the further optoelectronic component is fastened.
- a connection carrier to which the optoelectronic component and optionally the further optoelectronic component is fastened.
- Component be electrically conductively connected in each case with at least two contact surfaces of the connection carrier.
- Connection carrier can be embodied, for example, as a printed circuit board, such as a printed circuit board (PCB) or as a metal core board.
- PCB printed circuit board
- metal core board a printed circuit board
- Connection carrier may be the optoelectronic device
- Connection carrier for example, as a lead frame
- the optoelectronic device it is designed as a surface mounted device (smd) device.
- smd surface mounted device
- Connection carrier such as the circuit board
- connection carrier has on the
- Contact surfaces can be electrically connected via vias through the connection carrier with the optoelectronic component and optionally the further optoelectronic component.
- the optoelectronic device is therefore electrically external from the rear side
- the optoelectronic device has a frame.
- the frame may have a cavity in which the optoelectronic component is arranged.
- the cavity may extend completely through the frame along one direction.
- the frame can be arranged on the connection carrier and further attached to this
- the cavity can completely circulate the optoelectronic component in the lateral direction.
- the optoelectronic device has a
- cover on.
- the cover completely covers the cavity of the frame and forms part of it
- the cover is thus in the beam path of the
- the cover is formed as a foil.
- the Foil may contain a polyimide or consist of a polyimide.
- a polyimide refers in particular to a polymer having imide groups as essential structural units of the polymer main chain, it being possible for the imide groups to be present as linear or cyclic units. Furthermore, in addition to the imide groups, the polymer may also have other functional groups than
- the film is preferably formed high temperature resistant. That is, the film withstands temperature loads of at least 200 ° C, more preferably at least 250 ° C stood.
- Heat resistance a polyimide-containing film, for example, within the manufacturing process or the further processing of the optoelectronic device to be exposed to temperatures that can commonly occur in soldering.
- connection carrier is arranged on the side of the frame facing away from the cover. In vertical
- the optoelectronic device thus extends between the connection carrier and the cover.
- a beam path from the optoelectronic component to the radiation passage area is free from a cladding material for the optoelectronic component.
- the cavity of the frame is not with the optoelectronic component partially or completely enveloping encapsulation, such as a silicone or a
- Epoxy filled.
- the optical properties of the device are thus improved. Furthermore, the risk of mechanical stress on the optoelectronic component or a connecting conductor, for example a bonding wire between the optoelectronic component and the connection carrier, due to a different degree of thermal expansion of the frame and the covering material can thus be avoided. The risk of premature failure of the device can thus be reduced.
- Optoelectronic device from environmental influences such as dust is achieved by the cover.
- the cavity has a direction in a direction extending from the cover to the optoelectronic element
- the undercut region is expediently designed such that it can receive the optoelectronic component.
- the cavity has a region which tapers at least in regions from the cover in the direction of the optoelectronic component.
- the cavity can thus at least partially a reflector-like basic shape
- the cavity can at least partially
- the ⁇ be formed reflective.
- the ⁇ be formed reflective.
- Cavity be provided with a coating of the
- Optoelectronic component emitted and / or closed
- the frame may be formed by means of a material suitable for the Radiation a high reflectivity, preferably a
- the frame may be formed of a plastic filled with reflective particles, such as titanium oxide particles.
- reflective particles such as titanium oxide particles.
- radiated radiation or the proportion of passing through the radiation passage area and detected by the optoelectronic component radiation can be increased.
- the frame in particular the cavity, may have a region which is designed to absorb the radiation in a targeted manner.
- at least 50% of the incident radiation preferably at least 80% of the incident radiation, can be absorbed in this area.
- the frame may be formed black, for example, for the human eye. The proportion of at the frame, in particular at the cavity, diverted
- the frame and the connection carrier preferably the frame, the connection carrier and the cover, terminate flush at least along one direction.
- Device can be produced in a simplified manner in a composite, wherein emerge in the singling of the frame, the connection carrier and the cover, in particular in a common manufacturing step by severing from the composite.
- the optoelectronic device has an opening for an air exchange between the cavity and the Environment up.
- the cavity is therefore not hermetically sealed.
- the risk of a force acting on the cover due to a negative or positive pressure in the cavity with temperature changes of the optoelectronic device, for example during assembly of the device by means of soldering is eliminated or at least reduced.
- the connection carrier for example a connection carrier designed as a printed circuit board, can have the opening.
- a through-connection can be formed by the connection carrier as an opening.
- the further optoelectronic component is arranged in a further cavity and the further cavity is spaced from the cavity.
- At least two optoelectronic components of the optoelectronic device can thus be arranged in separate cavities.
- an emitter can be arranged in the cavity and a detector in the further cavity or vice versa.
- more than one optoelectronic component can also be arranged in a cavity.
- two detectors may be arranged in a cavity, which may be used for example for the
- Spectral ranges can be provided.
- a direct beam path between the optoelectronic component and the further optoelectronic component is suppressed by means of the frame. Also at one
- this is a proximity sensor and / or as a Ambient light sensor formed.
- the optoelectronic device may be in addition to that by means of the optoelectronic component and further
- the emitter-detector pair may include the proximity sensor and the additional opto-electronic
- Component form the ambient light sensor.
- the detector of the proximity sensor and the additional optoelectronic circuit form the ambient light sensor.
- Component can be arranged in a common cavity.
- an opto-electronic device intended to receive or to generate radiation
- connection carrier to which the optoelectronic
- a cover which covers the cavity and which forms a radiation passage area for the radiation
- Envelope material for the optoelectronic component is.
- connection carrier composite is provided.
- the connection carrier group is optoelectronic
- connection carrier assembly Components arranged.
- a frame element with a plurality of cavities is positioned on the connection carrier assembly such that the optoelectronic components in each case are arranged in a cavity.
- a cover is placed on the frame member.
- the connection carrier assembly is in a plurality of connection carriers, on each of which
- At least one optoelectronic component and a frame with a cavity are arranged, cut through.
- the method described is particularly suitable for producing an optoelectronic device described above.
- the optoelectronic device described above In connection with the optoelectronic
- the method can realize an optical device with an emitter-detector pair, in which the emitter and the detector are optically separated from one another by the frame which already emerges from the frame element during singulation.
- Figure 1 shows a first embodiment of an optoelectronic device in a schematic
- Figure 2 shows a second embodiment of a
- Embodiments of the cover as a function of the wavelength ⁇ ;
- FIGS. 4A to 4E show an exemplary embodiment of a method for producing optoelectronic devices.
- FIG. 1 shows a first exemplary embodiment of a
- Optoelectronic device shown schematically in a sectional view.
- Optoelectronic device 1 is designed as a proximity sensor, in which an optoelectronic component 21 and a further optoelectronic component 22 form an emitter-detector pair.
- the optoelectronic device 1 has a
- connection surfaces 31 Optoelectronic components facing away from the back of the connection carrier 3 are formed contact surfaces 31 which are provided for the external electrical contacting of the optoelectronic device.
- the contact surfaces 31 are connected via through-connections 35, which extend through the connection carrier 3, to connection surfaces 37, which in turn are electrically conductively connected to the optoelectronic components 21, 22.
- the vias may be formed as recesses in the connection carrier whose side surfaces are electrically conductive, preferably metallic, coated.
- the coated recesses may be filled with a filler, such as a solder resist.
- At least one of the optoelectronic components 21, 22 is preferably as an unhoused optoelectronic
- the optoelectronic component embodied as an emitter can be designed as a light-emitting diode, in particular as a light-emitting diode.
- the trained as a detector further optoelectronic device can, for example, as a photodiode or as a
- Phototransistor be formed.
- an integrated circuit having a photosensitive region such as an ASIC (Application Specific Integrated Circuit) may also be used.
- ASIC Application Specific Integrated Circuit
- connection carrier 3 On the connection carrier 3, a frame 4 is arranged and connected to this mechanically stable, for example by means of a fastening layer, such as an adhesive layer (not explicitly shown).
- a fastening layer such as an adhesive layer (not explicitly shown).
- the frame 4 has a cavity 51 and a further cavity 52, the optoelectronic component 21 being arranged in the cavity 51 and the further optoelectronic component 22 being arranged in the further cavity 52.
- the cavity 51 forms an aperture, which forms a radiation cone, represented by a dotted line 71, for a
- Main radiation passage area 210 of the optoelectronic component 21 defined radiation defined. Accordingly, the further cavity 52 forms a further aperture, which defines a further radiation cone 72. Within this further radiation cone to the optoelectronic device extending radiation hits directly on another
- An inner surface 510 of the cavity 51 has an inclined portion 61 and an undercut portion 63.
- the undercut area 63 is closer to the
- optoelectronic component 21 is arranged. in the
- the cavity 51 is at least so large that this area can accommodate the optoelectronic device 21.
- the cavity 51 tapers toward the optoelectronic component 21.
- Area 61 on the part of the optoelectronic component 21 final boundary 53 forms in regions the aperture that defines the radiation cone 71. While the minimum lateral extent of the undercut portion 63 of the cavity 51 is determined by the size of the male Optoelectronic component is predetermined, the aperture can be adjusted by means of the limitation 53 largely independently of it, in particular to a smaller in cross-section on the device 1 cross-section.
- the first optoelectronic component 21 emits radiation through a window 9, represented by an arrow 91. Part of this emitted radiation is emitted, as shown by an arrow 92
- the radiation cones 71, 72 and the distance of the window 9 from the optoelectronic device 1 are preferably adapted to each other such that the radiation cones 71, 72 do not overlap in the region of the window 9. So can
- Component 22 suppressed.
- Frame 4 is a cover 45 is arranged, which the
- the cover is for the protection of Optoelectronic devices 21, 22 and optionally provided for the connection conductor 25.
- Cavities 51, 52 at least partially filled and immediately adjacent to the optoelectronic devices 21, 22, so is not required.
- a beam path from the main radiation passage area 210 to the cover 45 is free of such a cladding material.
- Main radiation passage area 210 and the other main radiation passage area 220 a Main radiation passage area 210 and the other main radiation passage area 220 a
- Enveloping material and the frame 4 can be avoided.
- connection carrier 3 and the frame 4 and preferably also the foil are flush.
- Such a device can be produced in a simplified manner in a composite.
- the cover 45 is preferably designed as a film, in particular as a polyimide-containing film.
- the polyimide may contain or consist of a poly (diphenyloxide-pyromellithimide).
- the cover 45 in particular the film, has
- a wavelength range for the radiation emitted and / or to be detected during operation is preferably between 700 nm and 1100 nm, more preferably between 800 nm and 1000 nm.
- a peak wavelength of the emitted radiation may be 850 nm or 940 nm, respectively with a deviation of +/- 50 nm.
- a polyimide film is therefore also suitable for defining the shortwave edge of a daylight sensor.
- a self-supporting plate for example a plastic plate or a glass plate, can also be used for the cover 45.
- the transmission of the cover to the respective requirements is customizable.
- connection carrier 3 has openings 33, via which an air exchange between the environment and the cavity 51 or the further cavity 52 can take place.
- the openings 33 can analogous to the vias 35 through
- Vias are not or at least not completely filled.
- connection carrier can also be designed as a leadframe, with which the optoelectronic components 21, 22 are electrically conductively connected.
- the optoelectronic device can also have only one optoelectronic component or more than two optoelectronic components.
- the described optoelectronic device 1 is particularly compact and inexpensive to produce and therefore suitable for many applications.
- the optoelectronic device is particularly suitable for proximity sensor and / or
- Ambient light sensor in electronic devices such as hand-held devices, such as mobile phones.
- the second exemplary embodiment illustrated in a schematic sectional view in FIG. 2 substantially corresponds to the first described in connection with FIG. 1
- the cavity 51 is formed with a reflector-like basic shape. Even at a comparatively large angle through the
- Main radiation passage area 210 and / or by a
- the inner surface 510 of the cavity 51 is provided with a coating.
- the cavity by means of the coating 55 for the radiation emitted by the optoelectronic component 21 radiation is formed.
- the coating may have a reflectivity of 60% or more, preferably 80% or more. For example, is suitable for the
- the frame 4 itself may consist of a
- the frame may contain a plastic that is filled with reflective particles, such as titanium oxide particles.
- the additional cavity 52 can also be provided with such a coating as an alternative or in addition to the cavity 51.
- the frame 4 may be made of a reflective material and the coating may be provided to selectively absorb radiation in the spectral range to be detected.
- the frame 4 or the Coating 55 absorb at least 50% of the incident radiation.
- Cavity 51 completely or only partially provided with such a coating.
- an additional optoelectronic component 23 is arranged in the further cavity 52 and can be externally contacted electrically via contact surfaces 31.
- the additional optoelectronic component 23 is provided for the detection of radiation in a different detection area from the detection area of the further optoelectronic component 22.
- the additional optoelectronic component is a
- Ambient light sensor formed whose spectral
- Sensitivity distribution is approximated or equal to the sensitivity distribution of the human eye.
- the emitter-detector pair preferably operates in the
- further component 22 and the additional component 23 are achieved in this embodiment by means of a filter 26 on the further component 22 and by means of a further filter 27 on the additional component 23.
- the further filter 27 is preferably designed such that it together with the transmission of the cover 45 the Sensitivity distribution of the human eye replicates. If a polyimide film is used, a filter sufficient for this purpose determines the long-wave edge of the sensitivity radiation. On the use of a comparatively expensive trained as a bandpass filter can therefore be dispensed with.
- the further component 22 and the additional component 23 can therefore be of the same design apart from the various filters. Alternatively or additionally, different sensitivity distributions can be achieved by
- the further component 22 can also be two radiation
- Component can therefore be designed as a detector of a proximity sensor and as an ambient light sensor.
- a via 35 as an opening 33 through which a
- the via 35 is formed as a recess whose side surfaces is provided with an electrically conductive contact coating 36.
- the recess with the contact coating is free of a filler material, leaving a path for air exchange
- each cavity 51, 52 at least one via is formed as such an opening. Openings in addition to the vias are therefore not required, but may be additionally provided. It is also possible for a plurality of plated-through holes per cavity, in particular all plated-through holes, to be designed as openings. Of course, openings formed as openings can also be used in the first embodiment described in connection with FIG.
- FIGS. 4A to 4E An exemplary embodiment of a method for producing an optoelectronic device is shown schematically in sectional view in FIGS. 4A to 4E.
- Connection carrier assembly 30 from which emerge in the manufacture of several connection carrier is shown in Figure 4A. For simplicity, only part of the
- connection carrier 3 for example a printed circuit board, has plated-through holes 35, via the rear side
- Contact surfaces 31 are connected to front pads 37.
- connection carrier 3 has openings 33 which extend through the connection carrier.
- Openings and the recesses for the vias 35 may be formed in a common manufacturing step, wherein the openings 33 in contrast to the
- Through holes 35 are not or at least partially filled with a filler.
- connection carrier assembly 30 A plurality of preferably unhoused optoelectronic components 21, 22, 23 is arranged on the connection carrier assembly 30 and electrically connected to the connection surfaces 37
- connection carrier assembly 30 with the already mounted and contacted optoelectronic components 21, 22, 23 a frame element 40 with a plurality of cavities 51, 52 is positioned so that the components within the
- the frame 4 can be fastened to the connection carrier assembly 30, for example by means of a fastening layer, for example an adhesive layer (not explicitly shown in FIG. 4C).
- An optional existing coating 55 of the frame member 40 is preferably already before the attachment of the
- connection carrier 30 of the connection carrier 30 On a side facing away from the connection carrier 30 of the
- a cover 45 is applied, which covers the cavities 51, 52.
- a cover a film, in particular a polyimide film over the
- Cavities 51, 52 are tensioned.
- connection carrier composite 30 The composite formed from connection carrier composite 30,
- Frame member 40 and cover 45 is severed along dividing lines 8, whereby separate optoelectronic devices 1 emerge, in which the frame 4, the
- Connection carrier 3 and the cover 45 at least partially flush.
- the severing can in particular
- FIG. 4E A completed optoelectronic device 1, which is designed essentially as described in connection with FIG. 2, is shown in FIG. 4E.
- optoelectronic devices can be produced in a composite in a simple and reliable manner, wherein when singulating the composite for the further assembly finished surface mountable
- optoelectronic devices 1 protected.
- An additional wrapping material such as a potting compound to protect the optoelectronic devices is not required.
Landscapes
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/118,367 US9281301B2 (en) | 2011-05-19 | 2011-05-19 | Optoelectronic device and method for producing optoelectronic devices |
| PCT/EP2011/058186 WO2012155984A1 (de) | 2011-05-19 | 2011-05-19 | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
| CN201180070971.8A CN103548148B (zh) | 2011-05-19 | 2011-05-19 | 光电子装置和用于制造光电子装置的方法 |
| DE112011105262.6T DE112011105262B4 (de) | 2011-05-19 | 2011-05-19 | Optoelektronische Vorrichtung und Verfahren zur Herstellung von optoelektronischen Vorrichtungen |
| JP2014510671A JP5946520B2 (ja) | 2011-05-19 | 2011-05-19 | オプトエレクトロニクス装置及びオプトエレクトロニクス装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2011/058186 WO2012155984A1 (de) | 2011-05-19 | 2011-05-19 | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012155984A1 true WO2012155984A1 (de) | 2012-11-22 |
Family
ID=44626594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2011/058186 Ceased WO2012155984A1 (de) | 2011-05-19 | 2011-05-19 | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9281301B2 (de) |
| JP (1) | JP5946520B2 (de) |
| CN (1) | CN103548148B (de) |
| DE (1) | DE112011105262B4 (de) |
| WO (1) | WO2012155984A1 (de) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014029839A3 (de) * | 2012-08-23 | 2014-07-31 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung |
| WO2015039808A1 (de) * | 2013-09-19 | 2015-03-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches, licht-emittierendes bauteil und leiterrahmenverbund |
| WO2018015538A1 (de) * | 2016-07-21 | 2018-01-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil |
| WO2018197636A3 (de) * | 2017-04-27 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung und verfahren zur herstellung einer beleuchtungsvorrichtung |
| EP3486955A4 (de) * | 2016-07-14 | 2020-03-11 | KYOCERA Corporation | Gehäuse für photosensoren, photosensorvorrichtung und elektronisches modul |
| WO2020049048A1 (de) * | 2018-09-06 | 2020-03-12 | Osram Oled Gmbh | Elektronisches bauelement |
| CN114339096A (zh) * | 2020-09-29 | 2022-04-12 | 爱思开海力士有限公司 | 图像感测装置 |
| DE102022130145A1 (de) * | 2022-11-15 | 2024-05-16 | Ams-Osram International Gmbh | Optoelektronisches Bauelement mit Emitterchip und Gehäuse |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011105374B4 (de) * | 2011-06-22 | 2021-12-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund |
| DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
| US9496247B2 (en) * | 2013-08-26 | 2016-11-15 | Optiz, Inc. | Integrated camera module and method of making same |
| TWI619208B (zh) * | 2014-03-31 | 2018-03-21 | 菱生精密工業股份有限公司 | 具聚光結構之光學模組的封裝方法 |
| DE102014206995A1 (de) * | 2014-04-11 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen |
| KR102221599B1 (ko) * | 2014-06-18 | 2021-03-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
| US9687181B2 (en) * | 2014-09-17 | 2017-06-27 | International Business Machines Corporation | Semiconductor device to be embedded within a contact lens |
| TWI587003B (zh) * | 2014-10-15 | 2017-06-11 | 昇佳電子股份有限公司 | 內建光障元件之封裝結構、形成光學封裝結構之方法與所形成之光學封裝結構 |
| JP2017041467A (ja) * | 2015-08-17 | 2017-02-23 | ローム株式会社 | 光半導体装置 |
| TWI713173B (zh) * | 2016-01-20 | 2020-12-11 | 新加坡商海特根微光學公司 | 具有流體可滲透通道的光電模組及其製造方法 |
| US11069667B2 (en) | 2016-03-31 | 2021-07-20 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
| FR3055509B1 (fr) | 2016-08-26 | 2018-09-21 | Stmicroelectronics (Grenoble 2) Sas | Boitier electronique comprenant un capot a rainure |
| CN107785357B (zh) * | 2016-08-26 | 2025-04-08 | 意法半导体研发(深圳)有限公司 | 用于光学传感器封装体的防粘胶溢出帽盖 |
| US10475937B1 (en) * | 2017-03-30 | 2019-11-12 | Maxim Integrated Products, Inc. | Optical sensor packages employing cloaking layers |
| US11073615B2 (en) * | 2018-08-20 | 2021-07-27 | Lite-On Singapore Pte. Ltd. | Proximity sensor module with two sensors |
| CN110333515B (zh) * | 2019-04-24 | 2022-03-29 | 维沃移动通信有限公司 | 一种终端 |
| JP7577564B2 (ja) * | 2021-02-18 | 2024-11-05 | 浜松ホトニクス株式会社 | 光半導体装置 |
| JP2023085909A (ja) * | 2021-12-09 | 2023-06-21 | ローム株式会社 | 光センサ |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133752U (de) * | 1988-03-07 | 1989-09-12 | ||
| JPH05283549A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | ガラス封止型セラミック容器の製造方法 |
| US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
| EP1494277A2 (de) * | 2003-07-03 | 2005-01-05 | Matsushita Electric Industrial Co., Ltd. | Modul mit eingebautem Halbleiter und seine Herstellungsmethode |
| US20050275079A1 (en) * | 2002-03-22 | 2005-12-15 | Stark David H | Wafer-level hermetic micro-device packages |
| EP1826832A2 (de) * | 2006-02-24 | 2007-08-29 | Osram Opto Semiconductors GmbH | Elektronisches Bauteil |
| US20070284714A1 (en) * | 2004-05-12 | 2007-12-13 | Hamamatsu Photonics K.K. | Electronic Part And Method Of Producing The Same |
| DE102006060408A1 (de) * | 2006-12-20 | 2008-06-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung korrosionsbeständiger Metalloberflächen und Reflektor mit metallischer Oberfläche |
| JP2010258237A (ja) * | 2009-04-24 | 2010-11-11 | Panasonic Electric Works Co Ltd | 反射型光電センサ |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133752A (ja) | 1987-11-19 | 1989-05-25 | Ricoh Co Ltd | インクジェット記録ヘッド |
| JPH04340771A (ja) | 1991-05-17 | 1992-11-27 | Minolta Camera Co Ltd | 受光素子 |
| US5340993A (en) * | 1993-04-30 | 1994-08-23 | Motorola, Inc. | Optocoupler package wth integral voltage isolation barrier |
| JP3408987B2 (ja) * | 1999-03-30 | 2003-05-19 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
| US7075112B2 (en) | 2001-01-31 | 2006-07-11 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
| JP3801025B2 (ja) | 2001-11-16 | 2006-07-26 | ソニー株式会社 | 半導体装置 |
| JP2003218398A (ja) * | 2002-01-18 | 2003-07-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
| JP2003347601A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
| JP3782406B2 (ja) * | 2003-07-01 | 2006-06-07 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
| JP4659421B2 (ja) * | 2004-09-30 | 2011-03-30 | 株式会社トクヤマ | 発光素子収納用パッケージの製造方法 |
| KR101154801B1 (ko) * | 2004-12-03 | 2012-07-03 | 엔지케이 스파크 플러그 캄파니 리미티드 | 세라믹 기판 및 발광 소자 수납용 세라믹 패키지 |
| JP2006222358A (ja) | 2005-02-14 | 2006-08-24 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
| JP2006278743A (ja) | 2005-03-29 | 2006-10-12 | Konica Minolta Holdings Inc | 固体撮像装置 |
| US7282788B2 (en) | 2005-09-14 | 2007-10-16 | Sigurd Microelectronics Corp. | Image sensing chip package structure |
| US20070194212A1 (en) | 2006-02-23 | 2007-08-23 | National Taiwan University | Ambient light photodetector |
| JP2007234977A (ja) | 2006-03-02 | 2007-09-13 | Citizen Electronics Co Ltd | 半導体パッケージ |
| JP5394617B2 (ja) | 2006-06-16 | 2014-01-22 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法及び基板 |
| US8653612B2 (en) * | 2006-08-25 | 2014-02-18 | Sanyo Semiconductor Co., Ltd. | Semiconductor device |
| JP2008098516A (ja) * | 2006-10-13 | 2008-04-24 | Sanyo Electric Co Ltd | 光電変換装置 |
| US20080217709A1 (en) * | 2007-03-07 | 2008-09-11 | Knowles Electronics, Llc | Mems package having at least one port and manufacturing method thereof |
| JP5082542B2 (ja) * | 2007-03-29 | 2012-11-28 | ソニー株式会社 | 固体撮像装置 |
| JP2009123921A (ja) | 2007-11-15 | 2009-06-04 | Doshisha | 波長選択フィルタ付き受光センサ |
| KR101360294B1 (ko) * | 2008-05-21 | 2014-02-11 | 광주과학기술원 | 반사형 광학 센서장치 |
| WO2010044023A1 (en) * | 2008-10-17 | 2010-04-22 | Koninklijke Philips Electronics N.V. | Light emitting device |
| JP5283549B2 (ja) * | 2009-03-27 | 2013-09-04 | 本田技研工業株式会社 | 放電制御装置 |
| DE102009019412A1 (de) * | 2009-04-29 | 2010-11-04 | Fa. Austria Technologie & Systemtechnik Ag | Verfahren zur Herstellung einer Leiterplatte mit LEDs und gedruckter Reflektorfläche sowie Leiterplatte, hergestellt nach dem Verfahren |
| JP5198394B2 (ja) * | 2009-09-04 | 2013-05-15 | シャープ株式会社 | 近接照度センサおよびその製造方法 |
| US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
| JP5805301B2 (ja) | 2011-04-15 | 2015-11-04 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子装置 |
-
2011
- 2011-05-19 DE DE112011105262.6T patent/DE112011105262B4/de active Active
- 2011-05-19 JP JP2014510671A patent/JP5946520B2/ja active Active
- 2011-05-19 US US14/118,367 patent/US9281301B2/en active Active
- 2011-05-19 CN CN201180070971.8A patent/CN103548148B/zh active Active
- 2011-05-19 WO PCT/EP2011/058186 patent/WO2012155984A1/de not_active Ceased
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133752U (de) * | 1988-03-07 | 1989-09-12 | ||
| JPH05283549A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | ガラス封止型セラミック容器の製造方法 |
| US20050275079A1 (en) * | 2002-03-22 | 2005-12-15 | Stark David H | Wafer-level hermetic micro-device packages |
| US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
| EP1494277A2 (de) * | 2003-07-03 | 2005-01-05 | Matsushita Electric Industrial Co., Ltd. | Modul mit eingebautem Halbleiter und seine Herstellungsmethode |
| US20070284714A1 (en) * | 2004-05-12 | 2007-12-13 | Hamamatsu Photonics K.K. | Electronic Part And Method Of Producing The Same |
| EP1826832A2 (de) * | 2006-02-24 | 2007-08-29 | Osram Opto Semiconductors GmbH | Elektronisches Bauteil |
| DE102006060408A1 (de) * | 2006-12-20 | 2008-06-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung korrosionsbeständiger Metalloberflächen und Reflektor mit metallischer Oberfläche |
| JP2010258237A (ja) * | 2009-04-24 | 2010-11-11 | Panasonic Electric Works Co Ltd | 反射型光電センサ |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014029839A3 (de) * | 2012-08-23 | 2014-07-31 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung |
| US9606231B2 (en) | 2012-08-23 | 2017-03-28 | Osram Opto Semiconductors Gmbh | Optoelectronic apparatus |
| WO2015039808A1 (de) * | 2013-09-19 | 2015-03-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches, licht-emittierendes bauteil und leiterrahmenverbund |
| US10333032B2 (en) | 2013-09-19 | 2019-06-25 | Osram Opto Semiconductors Gmbh | Optoelectronic light-emitting component and leadframe assemblage |
| EP3486955A4 (de) * | 2016-07-14 | 2020-03-11 | KYOCERA Corporation | Gehäuse für photosensoren, photosensorvorrichtung und elektronisches modul |
| WO2018015538A1 (de) * | 2016-07-21 | 2018-01-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil |
| WO2018197636A3 (de) * | 2017-04-27 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung und verfahren zur herstellung einer beleuchtungsvorrichtung |
| US11041603B2 (en) | 2017-04-27 | 2021-06-22 | Osram Oled Gmbh | Illumination device and method for manufacturing an illumination device |
| WO2020049048A1 (de) * | 2018-09-06 | 2020-03-12 | Osram Oled Gmbh | Elektronisches bauelement |
| CN114339096A (zh) * | 2020-09-29 | 2022-04-12 | 爱思开海力士有限公司 | 图像感测装置 |
| DE102022130145A1 (de) * | 2022-11-15 | 2024-05-16 | Ams-Osram International Gmbh | Optoelektronisches Bauelement mit Emitterchip und Gehäuse |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103548148B (zh) | 2016-09-28 |
| US20140191253A1 (en) | 2014-07-10 |
| DE112011105262B4 (de) | 2025-10-16 |
| US9281301B2 (en) | 2016-03-08 |
| JP2014515553A (ja) | 2014-06-30 |
| JP5946520B2 (ja) | 2016-07-06 |
| CN103548148A (zh) | 2014-01-29 |
| DE112011105262A5 (de) | 2014-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2012155984A1 (de) | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen | |
| DE102011113483B4 (de) | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement | |
| WO2014048832A1 (de) | Optoelektronische vorrichtung | |
| DE19829197C2 (de) | Strahlungsaussendendes und/oder -empfangendes Bauelement | |
| EP2396832B1 (de) | Verkapselte optoeleketronische halbleiteranordnung mit lötstoppschicht und entsprechendes verfahren | |
| DE19727633C2 (de) | Bauteil zur gerichteten, bidirektionalen, optischen Datenübertragung | |
| DE102016213878B3 (de) | Gehäuse für einen Mikrochip mit einem strukturierten Schichtverbund und Herstellungsverfahren dafür | |
| DE102012107578B4 (de) | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements sowie Messvorrichtung mit einem lichtemittierenden, optoelektronischen Bauelement | |
| EP2062301A2 (de) | Gehäuse für optoelektronisches bauelement und anordnung eines optoelektronischen bauelementes in einem gehäuse | |
| DE19621124A1 (de) | Optoelektronischer Wandler und dessen Herstellungsverfahren | |
| DE102007029369A1 (de) | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements | |
| EP2583318A1 (de) | Oberflächenmontierbares optoelektronisches bauelement und verfahren zur herstellung eines oberflächenmontierbaren optoelektronischen bauelements | |
| EP2649647B1 (de) | Optoelektronisches halbleiterbauelement, verfahren zu dessen herstellung und verwendung eines derartigen bauelements | |
| WO2014029839A2 (de) | Optoelektronische vorrichtung | |
| CH712951B1 (de) | Spektrometer und Spektrometer-Herstellungsverfahren. | |
| WO2013182351A1 (de) | Optoelektronische vorrichtung und apparatur mit einer solchen vorrichtung | |
| WO2010103047A1 (de) | Strahlungsempfangendes halbleiterbauelement und optoelektronisches bauteil | |
| WO2010025701A1 (de) | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils | |
| WO2018219687A1 (de) | Halbleiterlaser-bauteil und verfahren zur herstellung eines halbleiterlaser-bauteils | |
| DE10234978A1 (de) | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung | |
| DE102020122812B4 (de) | Photoakustische Sensoren und zugehörige Herstellungsverfahren | |
| DE10302007B4 (de) | Optischer Sensor | |
| WO2021122112A1 (de) | Verfahren zur herstellung von halbleiterbauelementen und halbleiterbauelement | |
| WO2021110580A1 (de) | Optoelektronische vorrichtung und verfahren zur herstellung einer optoelektronischen vorrichtung | |
| DE112017005653B4 (de) | Leiterrahmen, optoelektronisches Bauelement mit einem Leiterrahmen und Verfahren zur Herstellung eines optoelektronischen Bauelements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11721513 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2014510671 Country of ref document: JP Kind code of ref document: A |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 112011105262 Country of ref document: DE Ref document number: 1120111052626 Country of ref document: DE |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 14118367 Country of ref document: US |
|
| REG | Reference to national code |
Ref country code: DE Ref legal event code: R225 Ref document number: 112011105262 Country of ref document: DE Effective date: 20140227 |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 11721513 Country of ref document: EP Kind code of ref document: A1 |
|
| WWG | Wipo information: grant in national office |
Ref document number: 112011105262 Country of ref document: DE |