WO2012131826A1 - Dispositif photovoltaïque - Google Patents

Dispositif photovoltaïque Download PDF

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Publication number
WO2012131826A1
WO2012131826A1 PCT/JP2011/006887 JP2011006887W WO2012131826A1 WO 2012131826 A1 WO2012131826 A1 WO 2012131826A1 JP 2011006887 W JP2011006887 W JP 2011006887W WO 2012131826 A1 WO2012131826 A1 WO 2012131826A1
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Prior art keywords
semiconductor layer
silicon
layer
amorphous semiconductor
particle
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PCT/JP2011/006887
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English (en)
Japanese (ja)
Inventor
本間　運也
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三洋電機株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a photoelectric conversion device suitable for a solar cell.
  • an i-type amorphous silicon layer and a p-type amorphous silicon layer are stacked on the front side of n-type crystalline silicon, and an i-type amorphous silicon layer is formed on the back side.
  • a structure in which an n-type amorphous silicon layer is stacked is known (for example, see Patent Document 1).
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a technique for improving the conversion efficiency in the photoelectric conversion device.
  • a photoelectric conversion device includes a one-conductivity type crystalline semiconductor layer, an intrinsic amorphous semiconductor layer formed on one surface of the crystalline semiconductor layer, and an intrinsic A fine particle-containing layer containing semiconductor fine particles formed on the amorphous semiconductor layer, and formed on the fine particle-containing layer and having an opposite conductivity type to the crystalline semiconductor layer or a crystalline semiconductor And an amorphous semiconductor layer of the same conductivity type as the layer.
  • the semiconductor fine particles include particles having a particle size in the range of 4 to 7 nm.
  • the conversion efficiency in the photoelectric conversion device can be improved.
  • FIG. 2A schematically shows a layer structure of the photoelectric conversion device according to this embodiment
  • FIG. 2B schematically shows a band diagram of the photoelectric conversion device according to this embodiment.
  • FIG. It is a schematic diagram for demonstrating the manufacturing method of the silicon nanoparticle which concerns on this Embodiment. It is a schematic diagram for demonstrating the manufacturing method of the silicon nanoparticle which concerns on this Embodiment. It is a schematic diagram for demonstrating the manufacturing method of the silicon nanoparticle which concerns on this Embodiment. It is a schematic diagram for demonstrating the manufacturing method of the silicon nanoparticle which concerns on this Embodiment. It is a schematic diagram for demonstrating the manufacturing method of the silicon nanoparticle which concerns on this Embodiment.
  • FIG. 1 is a cross-sectional view of the photoelectric conversion device according to this embodiment.
  • the scales and shapes of each layer and each part shown in the following drawings are set for convenience of explanation, and are not limitedly interpreted unless otherwise specified.
  • the photoelectric conversion device 10 is formed on one conductivity type crystal semiconductor layer 12 and one surface (upper surface shown in FIG. 1) of the crystal semiconductor layer 12.
  • Intrinsic amorphous semiconductor layer 14 formed on intrinsic amorphous semiconductor layer 14, formed on fine particle-containing layer 16 containing semiconductor fine particles, and fine particle-containing layer 16, and formed on crystalline semiconductor layer 12
  • the photoelectric conversion device 10 includes an intrinsic amorphous semiconductor layer 24 formed on the other surface (the lower surface shown in FIG. 1) of the crystalline semiconductor layer 12, and an intrinsic amorphous semiconductor.
  • the crystalline semiconductor layer 12 is n-type single crystal silicon.
  • the n-type single crystal silicon suitable for this embodiment has a resistivity of about 1 ⁇ ⁇ cm and a thickness of 200 to 300 ⁇ m.
  • the intrinsic amorphous semiconductor layer 14 is an i-type amorphous silicon (a-Si) semiconductor and has a thickness of about 10 nm on the upper surface of the crystalline semiconductor layer 12 using a known RF plasma CVD (13.56 MHz) method. It is formed into a film.
  • the fine particle-containing layer 16 is a semiconductor layer containing semiconductor fine particles 16c, as shown in FIG.
  • the semiconductor fine particles 16c are preferably composed only of particles having a particle size (particle diameter) in the range of 4 to 7 nm.
  • the present invention is not limited to this, and it may be composed of particles having different particle diameters, for example, a particle group having a particle size distribution peak in the range of 4 to 7 nm.
  • the semiconductor fine particles 16c are composed of silicon nanoparticles 16a and an insulating film 16b covering the periphery (surface).
  • the silicon nanoparticles 16a are made of single-crystal silicon or polycrystalline silicon, which is crystalline silicon, in a nano-level powder form (powder form), and the size (particle diameter) of the particles is in the range of 2 to 3 nm.
  • the present invention is not limited to this, and may be composed of particles having different particle diameters. For example, a particle group having a particle size distribution peak in the range of 2 to 3 nm. Also good.
  • the insulating film 16b is a silicon oxide film (SiO), a silicon oxynitride film (SiON), a silicon nitride film (SiN), or the like.
  • the insulating film 16b has a thickness of about 1 to 2 nm.
  • the fine particle-containing layer 16 is formed on the intrinsic amorphous semiconductor layer 14 so as to have a thickness of about 10 to 30 nm, for example, by an aerosol deposition method described later.
  • the first amorphous semiconductor layer 18 is a p-type amorphous silicon (a-Si) semiconductor, and is formed on the fine particle-containing layer 16 so as to have a thickness of about 10 nm using a known RF plasma CVD method.
  • the transparent conductive film 20 is an ITO film in which several percent of tin oxide (SnO 2 ) is added to indium oxide (In 2 O 3 ).
  • the transparent conductive film 20 is formed to a thickness of about 100 nm on the first amorphous semiconductor layer 18 using a known sputtering method.
  • the photoelectric conversion device 10 has a light receiving surface on the side where the transparent conductive film 20 is provided.
  • the comb-shaped electrode 22 has a conductive filler made of silver (Ag) and a thermosetting resin.
  • a predetermined pattern including a finger portion and a bus bar portion is formed in a predetermined region on the surface of the transparent conductive film 20 by printing.
  • the intrinsic amorphous semiconductor layer 24 is an i-type amorphous silicon (a-Si) semiconductor, and is formed on the lower surface of the crystalline semiconductor layer 12 to have a thickness of about 10 nm using a known RF plasma CVD method. It is a membrane.
  • a-Si i-type amorphous silicon
  • the fine particle-containing layer 26 is a semiconductor layer containing semiconductor fine particles 26c, as shown in FIG.
  • the semiconductor fine particles 26c are preferably composed only of particles having a particle size (particle diameter) in the range of 4 to 7 nm.
  • the present invention is not limited to this, and it may be composed of particles having different particle diameters, for example, a particle group having a particle size distribution peak in the range of 4 to 7 nm.
  • the semiconductor fine particles 26c are composed of silicon nanoparticles 26a and an insulating film 26b covering the periphery (surface).
  • the silicon nanoparticles 26a are produced by producing single-crystal silicon or polycrystalline silicon, which is crystalline silicon, into a nano-level powder (powder), and the size (particle size) of the particles is in the range of 2 to 3 nm.
  • the present invention is not limited to this, and may be composed of particles having different particle diameters. For example, a particle group having a particle size distribution peak in the range of 2 to 3 nm. Also good.
  • the insulating film 16b is a silicon oxide film (SiO), a silicon oxynitride film (SiON), a silicon nitride film (SiN), or the like.
  • the insulating film 16b has a thickness of about 1 to 2 nm.
  • the fine particle-containing layer 26 is formed to have a thickness of about 10 to 30 nm under the intrinsic amorphous semiconductor layer 24 by, for example, an aerosol deposition method described later.
  • the second amorphous semiconductor layer 28 is an n-type amorphous silicon (a-Si) semiconductor, and is formed to a thickness of about 10 nm under the fine particle-containing layer 26 using a known RF plasma CVD method.
  • the transparent conductive film 30 is an ITO film in which several percent of tin oxide (SnO 2 ) is added to indium oxide (In 2 O 3 ).
  • the transparent conductive film 30 is formed to a thickness of about 100 nm under the second amorphous semiconductor layer 28 using a known sputtering method.
  • the comb electrode 32 has a conductive filler made of silver (Ag) and a thermosetting resin.
  • a predetermined pattern including finger portions and bus bar portions is formed in a predetermined region on the surface of the transparent conductive film 30 by printing.
  • FIG. 2A schematically shows a layer structure of the photoelectric conversion device according to this embodiment
  • FIG. 2B schematically shows a band diagram of the photoelectric conversion device according to this embodiment.
  • the p-type a-Si layer, the i-type a-Si layer, and the n-type a-Si layer include many localized levels L, so that a leakage current flows in the state as it is. It becomes easy. Therefore, in the photoelectric conversion device 10 according to the present embodiment, the fine particle-containing layer 16 including the silicon nanoparticles 16a covered with the insulating film 16b between the i-type a-Si layer and the p-type a-Si layer. Is sandwiched. In the photoelectric conversion device 10, the fine particle-containing layer 26 including the silicon nanoparticles 26a covered with the insulating film 26b is sandwiched between the i-type a-Si layer and the n-type a-Si layer.
  • Ec represents the energy at the lower end of the conductor
  • Ev represents the energy at the upper end of the valence band.
  • the band gap due to the silicon nanoparticles 16a is narrow, and the band gap due to the insulating film 16b is wide.
  • a plurality of minibands B are formed at a position higher than the bottom of the well by the silicon nanoparticles 16a.
  • the resonant tunnel diode is formed by the energy level in the miniband formed by the silicon nanoparticles 16a constituting the semiconductor fine particles 16c.
  • the band gap of the miniband B is about 2 eV, which is larger than about 1.7 eV of amorphous silicon. Therefore, carriers are prevented from leaking to the p (n) type amorphous silicon layer through the low localized level in the amorphous silicon.
  • the open-circuit voltage Voc which is one of the indexes that determine the characteristics of the photoelectric conversion device (solar cell)
  • the conversion efficiency ⁇ of the solar cell is expressed by Expression (1).
  • Voc Open circuit voltage
  • Isc Short circuit current density
  • FF Curve factor
  • FIG. 3 to 6 are schematic views for explaining the method for producing silicon nanoparticles according to the present embodiment.
  • HF hydrofluoric acid
  • H 2 O 2 hydrogen peroxide solution
  • silicon powder containing silicon as a main component is prepared.
  • the silicon powder may be concentrated and separated from the silicon waste water treatment apparatus. Such silicon powder is also suitable from the viewpoint of recycling the silicon material.
  • the silicon powder 38 is immersed in a mixed solution of HF + H 2 O 2 (+ methanol) together with a platinum (Pt) electrode.
  • the particle size of the silicon powder 38 at this time is several ⁇ m to several mm.
  • the wavelength of the irradiation light is set so that h ⁇ > Eg ′.
  • the surface of the silicon nanoparticles 40 is etched in a porous shape, and the diameter gradually decreases.
  • the band gap increases in inverse proportion to the diameter. That is, the band gap Eg ′′ of the etched silicon nanoparticles is larger than the band gap Eg ′ of the silicon nanoparticles before etching.
  • silicon nanoparticles having a particle size of less than 2 nm have a large band gap, and are not very suitable for a photoelectric conversion device.
  • silicon nanoparticles having a particle size larger than 3 nm have a small band gap and may not exhibit a sufficient function as a semiconductor.
  • the particle size of the silicon nanoparticles is preferably in the range of about 2 to 3 nm.
  • the band gap Eg of the silicon nanoparticles 40 having a desired particle diameter is about 2.0 eV
  • light having an energy of 2.0 eV or less is irradiated.
  • light having a wavelength of 620 nm or more corresponding to energy of 2 eV is irradiated.
  • the irradiated light has energy larger than at least the band gap Eg ′ of the silicon nanoparticles in the silicon powder 38. As a result, holes are generated in the silicon particles and etching starts.
  • the diameter of the silicon nanoparticles can be controlled by the wavelength of light applied to the solution. Further, the silicon nanoparticles 40 having a desired particle diameter are negatively charged. Therefore, as shown in FIG. 6, the platinum electrode 41 is connected to the negative electrode side of the power source 39 and the platinum electrode 42 is connected to the positive electrode side, so that the positively charged platinum electrode 42 can be easily recovered.
  • FIG. 7 is a schematic diagram for explaining a method for forming a protective film on silicon nanoparticles according to the present embodiment.
  • the protective film corresponds to the insulating film 16b that covers the surface of the silicon nanoparticles 16a described above.
  • the surface of the hydrogen-terminated silicon nanoparticles 40 is oxidized to form a silicon oxide film 44 by oxygen plasma treatment or ozone ashing treatment. Thereafter, the silicon oxide film 44 is turned into a silicon oxynitride film 46 by nitriding by nitrogen plasma treatment.
  • the silicon oxynitride film 46 is more hydrophobic than the silicon oxide film 44, and the silicon nanoparticles 40 are suppressed from being unnecessarily oxidized by moisture in the atmosphere.
  • the above-described series of treatments can be performed in a shorter time compared to the case where silicon nanoparticles are wet-oxidized at room temperature.
  • the silicon nanoparticles 40 having the silicon oxide film 44 formed on the surface may be contained in the fine particle-containing layer 16 without being nitrided.
  • the particle size of the silicon nanoparticles is preferably in the range of about 2 to 3 nm, but when actually applied to a photoelectric conversion device, the surface is covered with a protective film having a thickness of about 1 to 2 nm. Therefore, the particle size of the semiconductor fine particles is preferably in the range of about 4 to 7 nm. In the case where the silicon nanoparticles are a particle group having a particle size distribution peak in the range of 2 to 3 nm, the semiconductor fine particle is a particle group having a particle size distribution peak in the range of 4 to 7 nm. Preferred.
  • FIG. 8 is a schematic diagram for explaining another method of forming a protective film on the silicon nanoparticles according to the present embodiment.
  • the silicon nanoparticles 40 terminated with hydrogen are irradiated with laser light to prevent overoxidation.
  • the surface of the silicon nanoparticle 40 can be made into the silicon oxide film 44 in a short time.
  • N 2 (or NH 3 ) gas is substituted as the X gas, the silicon nanoparticles 40 whose surface is covered with the silicon oxide film 44 are irradiated with laser light, so that the silicon oxide film 44 is made of silicon acid.
  • a nitride film 46 is formed.
  • the silicon oxynitride film 46 is more hydrophobic than the silicon oxide film 44, and the silicon nanoparticles 40 are suppressed from being unnecessarily oxidized by moisture in the atmosphere.
  • the above-described series of treatments can be performed in a short time compared to the case where silicon nanoparticles are wet-oxidized at room temperature.
  • the surface of the silicon nanoparticle 40 is turned into the silicon nitride film 48 in a short time by irradiating the silicon nanoparticle 40 terminated with hydrogen with laser light in an N 2 (or NH 3 ) gas atmosphere from the beginning. be able to.
  • the silicon nitride film 48 is also hydrophobic, and the silicon nanoparticles 40 are suppressed from being oxidized by moisture in the atmosphere.
  • FIG. 9 is a schematic view of a manufacturing apparatus used when forming the fine particle-containing layer according to the present embodiment.
  • the substrate 50 in which the intrinsic amorphous semiconductor layer 14 is formed on one surface of the crystalline semiconductor layer 12 is prepared.
  • the substrate 50 is fixed to the XYZ stage 54 in the deposition chamber 52.
  • the XYZ stage 54 is connected to a heater power source 56 and is configured to heat the substrate 50 as necessary.
  • the deposition chamber 52 includes a discharge valve 58 connected to a pump provided outside.
  • the manufacturing apparatus 100 includes an aerosol chamber 60 in addition to the deposition chamber 52.
  • the aerosol chamber 60 contains a mixture of semiconductor fine particles containing silicon nanoparticles 40 and monosilane gas in an aerosol state. Then, the aerosol mixture is ejected from the nozzle 64 toward the surface of the substrate 50 through the pipe 62.
  • FIG. 10 is a diagram schematically showing the fine particle-containing layer formed on the substrate.
  • the aerosol mixture ejected from the nozzle 64 is deposited on the substrate 50 as semiconductor fine particles 65 containing silicon nanoparticles 40 and amorphous silicon 66.
  • the semiconductor fine particles 65 the surface of the silicon nanoparticles 40 is covered with the silicon oxynitride film 46 or the silicon nitride film 48 described above.
  • the amorphous silicon 66 functions as a matrix of the fine particle-containing layer 16 (26).
  • the film forming method according to the present embodiment mixes silane gas, which is a gas that is easily mixed uniformly with fine particles, and silicon nanoparticles, and sprays the mixture onto the substrate, whereby the silicon nanoparticles are sprayed on the substrate. Can be deposited. A part of the silane gas that is a carrier gas is formed as a matrix of the fine particle-containing layer.
  • emitted from the nozzle 64 may be suppressed, or the board
  • the present invention has been described with reference to each of the above-described embodiments, but the present invention is not limited to the above-described embodiments, and those in which the configurations of the embodiments are appropriately combined or replaced. Are also included in the present invention.
  • the described embodiments can also be included in the scope of the present invention.
  • 10 photoelectric conversion device 12 crystal semiconductor layer, 14 intrinsic amorphous semiconductor layer, 16 fine particle-containing layer, 16a silicon nanoparticle, 16b insulating film, 16c semiconductor fine particle, 18 first amorphous semiconductor layer, 20 transparent conductive film , 22 comb electrode, 24 intrinsic amorphous semiconductor layer, 26 fine particle-containing layer, 26a silicon nanoparticle, 26b insulating film, 26c semiconductor fine particle, 28 second amorphous semiconductor layer, 30 transparent conductive film, 32 comb electrode, 34 electrons, 36 holes, 38 silicon powder, 39 power supply, 40 silicon nanoparticles, 41, 42 platinum electrodes, 44 silicon oxide film, 46 silicon oxynitride film, 48 silicon nitride film.
  • the present invention is suitable for solar cells and the like.

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Abstract

L'invention concerne un dispositif photovoltaïque (10) qui comprend : une couche semi-conductrice cristalline (12) d'un type de conductivité ; une couche semi-conductrice amorphe intrinsèque (14) formée sur l'une des surfaces de la couche semi-conductrice cristalline ; une couche (16) contenant des particules formée sur la couche semi-conductrice amorphe intrinsèque et contenant des particules semi-conductrices ; et une première couche semi-conductrice amorphe (18) du type de conductivité opposé par rapport à la couche semi-conductrice cristalline, ou une couche semi-conductrice amorphe du même type de conductivité que la couche semi-conductrice cristalline, formée sur la couche contenant des particules. Les particules semi-conductrices comprennent des particules ayant une dimension de particule se situant dans la plage de 4 à 7 nm.
PCT/JP2011/006887 2011-03-31 2011-12-09 Dispositif photovoltaïque WO2012131826A1 (fr)

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JP2011-077879 2011-03-31
JP2011077879A JP2014116327A (ja) 2011-03-31 2011-03-31 光電変換装置

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WO2012131826A1 true WO2012131826A1 (fr) 2012-10-04

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US8822262B2 (en) * 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
EP3640993A1 (fr) * 2017-10-18 2020-04-22 IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) Couche, élément multiniveaux, procédé de fabrication d'un élément multiniveaux et procédé de commande d'un élément multiniveaux

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319335A (ja) * 2005-05-12 2006-11-24 General Electric Co <Ge> 表面パシベーティッド光起電装置
JP2007535806A (ja) * 2004-04-30 2007-12-06 ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド 人工アモルファス半導体および太陽電池への適用
JP2008533729A (ja) * 2005-03-14 2008-08-21 キュー−セルズ アーゲー 太陽電池
JP2010206004A (ja) * 2009-03-04 2010-09-16 Seiko Epson Corp 光電変換装置および電子機器
WO2011004446A1 (fr) * 2009-07-06 2011-01-13 トヨタ自動車株式会社 Élément de conversion photoélectrique
WO2011010379A1 (fr) * 2009-07-23 2011-01-27 トヨタ自動車株式会社 Élément de conversion photoélectrique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007535806A (ja) * 2004-04-30 2007-12-06 ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド 人工アモルファス半導体および太陽電池への適用
JP2008533729A (ja) * 2005-03-14 2008-08-21 キュー−セルズ アーゲー 太陽電池
JP2006319335A (ja) * 2005-05-12 2006-11-24 General Electric Co <Ge> 表面パシベーティッド光起電装置
JP2010206004A (ja) * 2009-03-04 2010-09-16 Seiko Epson Corp 光電変換装置および電子機器
WO2011004446A1 (fr) * 2009-07-06 2011-01-13 トヨタ自動車株式会社 Élément de conversion photoélectrique
WO2011010379A1 (fr) * 2009-07-23 2011-01-27 トヨタ自動車株式会社 Élément de conversion photoélectrique

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