WO2012115165A1 - 膜形成方法および膜形成装置 - Google Patents
膜形成方法および膜形成装置 Download PDFInfo
- Publication number
- WO2012115165A1 WO2012115165A1 PCT/JP2012/054314 JP2012054314W WO2012115165A1 WO 2012115165 A1 WO2012115165 A1 WO 2012115165A1 JP 2012054314 W JP2012054314 W JP 2012054314W WO 2012115165 A1 WO2012115165 A1 WO 2012115165A1
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- WO
- WIPO (PCT)
- Prior art keywords
- film
- film forming
- electromagnetic wave
- forming method
- coating
- Prior art date
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/02—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
- H01B19/04—Treating the surfaces, e.g. applying coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/102—Using microwaves, e.g. for curing ink patterns or adhesive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a film forming method and a film forming apparatus for forming a film on a plastic substrate by coating.
- a large display requires a thin film transistor (TFT), and a conductive film such as a wiring or an electrode, a semiconductor film constituting the transistor, or a dielectric film such as a gate insulating film is used for the thin film transistor.
- TFT thin film transistor
- Patent Document 1 discloses a coating composition obtained by adding a binder or a solvent to metal particles.
- Patent Document 2 tetrabenzoporphyrin (BP) (Patent Document 2), poly-3-hexylthiophene (P3HT) (Patent Document 3), and alkylbenzothienobenzothiophene A device using (Cu-BTBT) (Patent Document 4) is known.
- BP tetrabenzoporphyrin
- P3HT poly-3-hexylthiophene
- Cu-BTBT alkylbenzothienobenzothiophene
- Patent Document 5 discloses an organic dielectric such as polyvinylphenol (PVP) or cyanoethyl pullulan (CyEPL) as a TFT dielectric film (gate insulating film).
- PVP polyvinylphenol
- CyEPL cyanoethyl pullulan
- a material using a (gate insulation) material is disclosed.
- the coating composition used for such coating printing contains other additives such as a solvent and a polymer, the desired properties can be obtained only by coating due to the presence of the solvent or the polymer contained therein. Therefore, it is necessary to remove these by resistance heating. This is shown in the above cited reference 1.
- an object of the present invention is to provide a film forming method and a film forming apparatus capable of forming a film having good characteristics on a plastic substrate using a coating printing technique.
- a coating composition containing a film component is applied on a plastic substrate to form a coating film, and the coating film is irradiated with electromagnetic waves to dry and / or dry the coating film.
- a film forming method is provided that includes modifying and forming a film.
- the film may be a conductor film.
- the coating composition includes metal nanoparticles, and the coating film is irradiated with electromagnetic waves, and then the metal nanoparticles are used.
- a coating film to be a wiring to be formed can be formed.
- the coating film is formed as a wiring pattern before the annealing, and the electromagnetic wave can be irradiated to at least the wiring pattern.
- the coating film is a coating film applied to the entire surface of the plastic substrate, and a wiring pattern can be formed after the coating film applied to the entire surface is irradiated with electromagnetic waves.
- the coating film can be treated with gas plasma before annealing by irradiation with electromagnetic waves. Furthermore, it is possible to irradiate the electromagnetic wave while spraying and applying the coating composition onto the plastic substrate, and then form a wiring pattern on the coating film formed on the plastic substrate.
- a composition containing metal nanoparticles, a solvent and a dispersant can be suitably used.
- the metal nanoparticles are preferably Ag, Cu, Al, or an alloy containing any of these.
- the film can be a semiconductor film.
- a coating composition containing an organic semiconductor material can be used. It is preferable to set the frequency of the electromagnetic wave to a frequency at which the absorbability with respect to the plastic substrate is low and the absorbability with respect to the coating composition containing the organic semiconductor material is increased.
- the frequency of the electromagnetic wave is preferably an absorption peak value of dielectric dispersion characteristics of the coating composition or a value in the vicinity thereof.
- a solution in which poly-3-hexylthiophene (P3HT) as an organic semiconductor material is dissolved in chloroform (CHCl 3 ) can be preferably used.
- P3HT poly-3-hexylthiophene
- chloroform chloroform
- the frequency of the electromagnetic wave a frequency in the range of 1 Hz to 10 kHz can be used.
- the film can be a dielectric film, and in that case, a coating composition containing an organic dielectric material can be used.
- the frequency of the electromagnetic wave is set to a frequency at which the absorbability with respect to the plastic substrate is low and the absorbability with respect to the coating composition containing the organic dielectric material is increased.
- the frequency of the electromagnetic wave is preferably an absorption peak value of dielectric dispersion characteristics of the coating composition or a value in the vicinity thereof.
- a solution of polyvinylphenol can be suitably used.
- the frequency of the electromagnetic wave a frequency in the range of 100 Hz to 50 kHz can be used.
- the electromagnetic wave irradiation can be performed in a pulsed manner. Furthermore, it is possible to irradiate the electromagnetic wave while heating the substrate to a temperature lower than the heat resistant temperature of the plastic substrate.
- a processing container in which a predetermined atmosphere is formed and a member in which a coating composition containing a film component is applied on a plastic substrate to form a coating film are provided in the processing container. And means for irradiating at least the coating film of the member with an electromagnetic wave irradiation unit, and the coating film is irradiated with electromagnetic waves from the electromagnetic wave irradiation unit.
- a film forming apparatus is provided that is dried and / or modified to form a film.
- the means for arranging may be a support member that supports the member on which the coating film is formed. It is preferable to further comprise a cooling mechanism for cooling the plastic substrate through the support member.
- the electromagnetic wave irradiation unit can irradiate the electromagnetic wave in a pulse shape. Furthermore, it can also be set as the structure further equipped with the heating means which heats the said member supported on the said supporting member. The electromagnetic wave irradiation unit can set the frequency of the electromagnetic wave so that the absorbability with respect to the coating composition is increased.
- FIG. 1 is a flowchart showing a wiring forming method according to an embodiment of the present invention.
- a member having a coating film formed by coating a coating composition containing a film component on a plastic substrate, for example, a device sheet for forming a device is prepared (step 1).
- the coating composition when the film is a conductor film such as a wiring or an electrode, the coating composition includes, for example, metal nanoparticles, and when the film is a semiconductor film, for example, includes an organic semiconductor material. If the film is a dielectric film, a film containing an organic dielectric material is used. Depending on the material of the film component and the coating method, such a film component may be a solvent, a polymer, a dispersant, a binder, Various additives and the like can be appropriately mixed to adjust the viscosity, and those prepared to be coated can be used. Typically, a coating ink is used.
- the metal nanoparticles are composed of fine metal particles having a particle diameter of about 1 to several hundred nm.
- a metal constituting the metal nanoparticles a metal that can be applied to fine metal wiring is used, and any of Ag, Cu, Al, and an alloy containing any of these can be given as a typical example.
- the coating composition can be obtained by dispersing the metal nanoparticles in an appropriate solvent.
- Organic semiconductor materials include polycyclic aromatic hydrocarbons such as pentacene, anthracene, and rubrene, low molecular compounds such as tetracyanoquinodimethane (TCNQ), polyacetylene, poly-3-hexylthiophene (P3HT), and polyparaphenylene. And polymers such as vinylene (PPV) and alkylbenzothienobenzothiophene (Cu-BTBT). Examples of the coating composition using an organic semiconductor material include a P3HT solution using chloroform (CHCl 3 ) as a solvent.
- CHCl 3 chloroform
- organic dielectric material examples include polyvinylphenol (PVP) and cyanoethyl pullulan (CyEPL).
- PVP polyvinylphenol
- CyEPL cyanoethyl pullulan
- An example of a coating composition using an organic dielectric material is a PVP liquid.
- a coating method for coating the coating composition it is preferable to employ a coating having good followability with respect to a fine pattern.
- a coating method for coating the coating composition it is preferable to employ a coating having good followability with respect to a fine pattern.
- inkjet printing, screen printing, micro contact printing (MCP), or the like can be suitably used.
- MCP micro contact printing
- a spin coating method, a bar coating method, and a reverse printing method can also be used.
- At least the coating film portion of the member (device sheet) prepared in this way is irradiated with electromagnetic waves such as microwaves to dry and / or modify the coating film to form a film (step 2).
- the coating film contains components such as a solvent and a dispersant.
- the metal nanoparticles When metal nanoparticles are used, the metal nanoparticles are not sufficiently aggregated and bulky. Since it cannot be brought close to the metal structure, its electrical conductivity is low.
- the coating film when an organic semiconductor material or an organic dielectric material is used, the coating film contains components such as a solvent or a dispersant, and the organic semiconductor material or the organic dielectric material has a desired structure. It is difficult to obtain the initial characteristics due to reasons such as lack. For this reason, the coating film formed by coating the coating composition is irradiated with electromagnetic waves such as microwaves to dry or modify the coating film, or both to achieve the desired semiconductor characteristics and dielectric characteristics. A film having the same is formed. The electromagnetic wave may be applied to at least the coating film constituting the wiring pattern, but is typically applied to the entire surface of the device sheet.
- resistance heating is used to supply energy for drying and modifying this type of coating film.
- a solvent or the like is volatilized to form a film having a desired characteristic (for example, In order to obtain a conductive film having high electrical conductivity suitable for wiring and the like, a relatively high temperature is required.
- a structure that exhibits the semiconductor characteristics of the organic semiconductor material may not be formed, or a structure of the organic dielectric material may not be formed. For this reason, when using a plastic substrate like this embodiment, heating temperature will become more than the heat-resistant temperature.
- electromagnetic wave irradiation typically microwave heating is used as energy for drying and / or modifying the coating film.
- the plastic substrate is hardly heated because it transmits electromagnetic waves, and the coating composition absorbs the electromagnetic waves and is directly heated by heat radiation, for example, promoting the physicochemical action in the coating film in a solution state, thereby decomposing the solvent.
- Progress or modification of the coating composition progresses to form a desired film.
- the temperature of the substrate may be supplementarily increased as long as it is lower than the heat resistant temperature of the material of the plastic substrate.
- Electromagnetic heating is represented by the sum of loss due to conduction (induction loss), dielectric loss, and magnetic loss, as shown in the following equation (1).
- P 1/2 ⁇ ⁇ f ⁇
- P energy loss per unit volume [W / m 3 ]
- E electric field [V / m]
- H magnetic field [A / m]
- f frequency [s ⁇ 1 ]
- ⁇ 0 vacuum permittivity [F / m]
- ⁇ ′′ r imaginary part of complex permittivity
- ⁇ 0 vacuum permeability [H / m]
- ⁇ ′′ r imaginary number of complex permeability Part.
- electromagnetic wave heating microwave heating
- selective heating is possible by utilizing the difference between induction loss, dielectric loss, and magnetic loss according to the type of material.
- the plastic substrate is hardly heated because it is a solid polymer material with little induction loss and dielectric loss.
- the metal nanoparticles used to form the wiring are electrically conductive materials, and thus are heated mainly by induction loss due to eddy current when irradiated with electromagnetic waves. If the solvent or dispersant has polarizability, it is heated by dielectric loss.
- the coating film made of the coating composition constituting the wiring pattern is irradiated with electromagnetic waves, and the solvent and dispersant are mainly heated by dielectric loss to evaporate and remove the metal nanoparticles mainly by induction loss. Agglomerate. For this reason, the wiring (including electrodes) obtained by electromagnetic wave annealing can exhibit much higher electrical conductivity than before annealing.
- the metal nanoparticles have a high frequency of electromagnetic waves depending on the material.
- the solvent and the dispersant also have a high frequency of electromagnetic waves corresponding to the material. Therefore, in order to efficiently perform electromagnetic wave heating, it is preferable to select and irradiate an electromagnetic wave having a frequency with good absorbency according to the material.
- the electromagnetic wave to be irradiated one having a frequency of 300 MHz to 300 GHz can be suitably used.
- electromagnetic wave irradiation can be performed in air
- the carbon content of the coating composition can be more effectively removed, and the metal component in the wiring can be increased.
- aggregation of metal nanoparticles can be further promoted by electromagnetic wave irradiation in a reduced pressure atmosphere, and the electrical conductivity can be further increased.
- wiring (metal film) was formed using a sample in which the frequency of electromagnetic waves was changed at two levels of 140 GHz and 107 GHz and a coating composition containing Ag nanoparticles was applied to the entire surface of the substrate.
- the substrate temperature was heated to 100 ° C. and an electromagnetic wave was irradiated in the atmosphere for 10 minutes for annealing.
- the coating composition was heated, and the substrate temperature rose to 240 ° C. and 270 ° C. for each sample.
- An optical micrograph of the wiring at that time is shown in FIG. Table 1 shows the sheet resistance of these samples and the composition ratio of Ag and C by EPMA (electroprobe microanalyzer). As shown in FIG.
- wiring was formed under any conditions, but finer wiring was obtained when the frequency was 107 GHz and the substrate temperature was 100 to 270 ° C.
- the amount of carbon remaining in the wiring is lower than when the frequency is 140 GHz and the substrate temperature is 100 to 240 ° C.
- a relatively low resistance value of 0.019 ⁇ / ⁇ was obtained. From this result, it was found that by optimizing the electromagnetic wave irradiation conditions, the wiring after being irradiated with the electromagnetic wave and annealed could be put to practical use.
- Dielectric dispersion refers to the frequency (frequency) dependence of the dielectric function.
- a substance generates various polarizations such as electronic polarization, ionic polarization, and orientation polarization, and the absorption of electromagnetic waves increases at a frequency at which such polarization occurs.
- the imaginary part of the complex dielectric constant exhibits such absorption characteristics.
- the coating film by irradiating the coating film with electromagnetic waves in a frequency band (for example, 1 Hz to 10 kHz) corresponding to the peak of the imaginary part of the complex dielectric constant in the coating composition containing the organic semiconductor material, the energy is not absorbed by the plastic substrate. In addition, it can be effectively absorbed by the coating film.
- a frequency band for example, 1 Hz to 10 kHz
- FIG. 3 is a graph showing the dielectric dispersion of a coating composition made of a solution (0.8 wt% solution) in which P3HT, which is an organic semiconductor material, is dissolved in CHCl 3 , which is a solvent.
- P3HT which is an organic semiconductor material
- CHCl 3 which is a solvent.
- the peak of the imaginary part ( ⁇ ′′) of the complex dielectric constant of this solution is in the low frequency region around 400 Hz, which is considered to be based on the polarization by ions.
- FWHM peak half-width
- the energy can be absorbed only by the CHCl 3 solution of P3HT, which is the coating composition, without being absorbed by the plastic substrate.
- the coating film can be effectively dried and / or modified, and the real part ( ⁇ ′) and dielectric loss tangent (tan ⁇ ) of the complex dielectric constant are also shown in FIG.
- FIG. 4 is a chart showing the dielectric dispersion of CHCl 3 , and the peak of the imaginary part is in the vicinity of 200 Hz, and it can be seen that an absorption peak appears in the low frequency region near the absorption peak of the solution even with CHCl 3 alone.
- the frequency corresponding to the peak of the imaginary part of the complex dielectric constant in the coating composition containing the organic dielectric material because the imaginary part of the complex dielectric constant exhibits absorption characteristics when measuring the dielectric dispersion of the coating film as described above.
- electromagnetic waves of a band for example, 100 Hz to 50 kHz
- FIG. 5 is a graph showing the dielectric dispersion of a coating composition made of PVP liquid (100 wt%), which is an organic dielectric material.
- the main component of PVP is cyclohexanone (C 6 H 10 O).
- the peak of the imaginary part ( ⁇ ′′) of the complex dielectric constant of this liquid is in the low frequency region around 2 to 4 kHz, which is considered to be based on the polarization by ions.
- the energy can be absorbed only by the PVP liquid as the coating composition without being absorbed by the plastic substrate.
- the coating film can be effectively dried and / or modified, and the real part ( ⁇ ′) and dielectric loss tangent (tan ⁇ ) of the complex dielectric constant are also shown in FIG.
- FIG. 6 is a cross-sectional view showing an example of a film forming apparatus for performing the film forming method according to the present embodiment.
- the film forming apparatus 1 includes a processing container 2, a gas introduction mechanism 3, an exhaust mechanism 4, a mounting table 5, a radiation thermometer 6, an electromagnetic wave supply unit 8, and an overall control unit 9.
- the processing container 2 is made of, for example, aluminum and is grounded. A ceiling portion of the processing container 2 is opened, and a top plate 22 is airtightly provided in the opening portion via a seal member 21.
- the material of the top plate 22 is a dielectric such as quartz or aluminum nitride.
- Shutters 2A and 2B are provided at the carry-in port 23 and the carry-out port 24, respectively.
- a conveyance mechanism not shown
- electromagnetic waves microwaves
- the electromagnetic waves and gases inside the processing container 2 are exposed to the outside.
- Each has a function of closing the carry-in port 23 and the carry-out port 24 so as not to leak.
- the shutters 2A and 2B are made of a soft metal, such as indium or copper, and press the device sheet D when the device sheet D stops.
- the device sheet D is wound around a feeding roll (not shown), and the device sheet D fed out from the feeding roll is carried into the processing container 2 and is taken up on the opposite side (not shown). ).
- An exhaust port 25 connected to the exhaust mechanism 4 is provided at the peripheral edge of the bottom of the processing container 2.
- the exhaust mechanism 4 includes an exhaust passage 41 through which exhaust flows, a pressure control valve 42 that controls the exhaust pressure, and an exhaust pump 43 that exhausts the atmosphere inside the processing container 2.
- the exhaust pump 43 exhausts the atmosphere inside the processing container 2 to a predetermined degree of vacuum via the exhaust passage 41 and the pressure control valve 42. Note that the atmosphere in the processing container 2 may be set to atmospheric pressure without exhausting the atmosphere.
- the mounting table 5 is airtightly attached to an opening formed at the bottom of the processing container 2 with a seal member 26 interposed therebetween.
- the mounting table 5 is grounded.
- the mounting table 5 includes a mounting table body 51, and the device sheet D is mounted on the mounting table body 51.
- a resistance heater 52 is embedded in the mounting table main body 51, and the plastic substrate S can be heated by supplying power to the resistance heater 52 from the heater power supply 53.
- a refrigerant channel 55 is formed in the mounting table main body 51.
- the refrigerant channel 55 is connected to a refrigerant circulator 58 that circulates the refrigerant via a refrigerant introduction pipe 56 and a refrigerant discharge pipe 57. By operating the refrigerant circulator 58, the refrigerant circulates and circulates through the refrigerant flow path 55, and the plastic substrate S can be cooled.
- the electromagnetic wave supply unit 8 is provided above the top plate 22 of the processing container 2.
- the electromagnetic wave supply unit 8 includes a waveguide 82 and an incident antenna 83.
- the electromagnetic wave generation source 81 is connected to one end of the waveguide 82, and the other end of the waveguide 82 is connected to the incident antenna 83.
- an ultrasonic generation source an RF power source, a magnetron, a klystron, a gyrotron, or the like can be used.
- magnetron and gyrotron are preferable.
- the gyrotron generates electromagnetic waves (microwaves) from millimeter waves (1 mm ⁇ wavelength ⁇ 10 mm) to submillimeter waves (0.1 mm ⁇ wavelength ⁇ 1 mm).
- the magnetron generates electromagnetic waves (microwaves) of centimeter waves (1 cm ⁇ wavelength ⁇ 10 cm).
- the electromagnetic wave generation source 81 outputs the generated electromagnetic wave to the waveguide 82.
- the waveguide 82 is a metal tube that propagates the electromagnetic wave generated by the electromagnetic wave generation source 81 to the incident antenna 83, and has a circular or rectangular cross-sectional shape.
- the frequency range of the electromagnetic waves to irradiate is wide, it is preferable to install a plurality of electromagnetic wave generation sources 81 having different frequency ranges so that they can be switched depending on the frequency.
- the incident antenna 83 has a plate shape and is provided on the top surface of the top plate 22.
- the incident antenna 83 is made of a copper plate or aluminum plated with silver.
- the incident antenna 83 is provided with a plurality of specular reflection lenses and reflection mirrors (not shown) so that electromagnetic waves guided from the waveguide 82 can be introduced toward the processing space of the processing container 2.
- the incident antenna 83 may be provided on the side wall of the processing container 2.
- the overall control unit 9 includes a microprocessor (computer), and controls each component in the wiring forming apparatus 1 in response to signals from sensors such as the radiation thermometer 6.
- the overall control unit 9 includes a storage unit storing a process sequence of the wiring forming apparatus 1 and a process recipe that is a control parameter, an input unit, a display, and the like, and controls the apparatus 1 according to the selected process recipe. It has become.
- a device sheet D having a coating film C formed by coating the coating composition on a plastic substrate S such as PET, PEN, PC, PI is prepared, and an electromagnetic wave (microwave) generated from an electromagnetic wave generation source 81 is prepared.
- the frequency should be suitable for the coating composition.
- the coating composition contains Ag nanoparticles, one having a frequency of about 100 GHz is used.
- a P3HT CHCl 3 solution is used as the coating composition, in the dielectric dispersion of FIG.
- electromagnetic waves in a frequency band (for example, 1 Hz to 10 kHz) corresponding to the peak of the imaginary part of the complex dielectric constant, preferably peak
- An electromagnetic wave having a frequency of 400 Hz as a position or a frequency in the vicinity thereof is irradiated.
- an electromagnetic wave in a frequency band (for example, 100 Hz to 50 kHz) corresponding to the peak of the imaginary part of the complex dielectric constant, preferably at the peak position. Irradiate an electromagnetic wave having a frequency of 2 to 4 kHz or the vicinity thereof.
- the device sheet D fed out from the feeding roll (not shown) is carried in from the carry-in entrance 23 and placed on the placing table 5.
- the carry-in port 23 and the carry-out port 24 are closed by the shutters 2A and 2B.
- a lead material on which no coating film is formed is connected to the end portion of the device sheet D, and the lead material is attached to a winding roll (not shown). Thereby, the electromagnetic wave irradiation to the first part of the device sheet D becomes possible.
- the temperature of the plastic substrate S is controlled to be a predetermined temperature by the refrigerant flowing through the resistance heater 52 and / or the refrigerant flow passage 55 in the mounting table main body 51. At this time, it is preferable to flow the coolant through the coolant channel 55 so that the plastic substrate S is sufficiently cooled.
- a predetermined inert gas such as nitrogen or a rare gas such as argon or helium is introduced into the processing container 2 from the gas nozzles 31A and 31B and exhausted.
- the mechanism 4 is evacuated to form a reduced pressure atmosphere in the processing container 2.
- the inside of the processing container 2 is set to an atmospheric pressure atmosphere without exhausting.
- an electromagnetic wave having a predetermined wavelength generated from the electromagnetic wave generation source 81 of the electromagnetic wave supply unit 8 is guided to the incident antenna 83 through the waveguide 82, is transmitted through the top plate 22, and is introduced into the processing container 2.
- the electromagnetic wave introduced into the processing container 2 is applied to the device sheet D, and the coating film C is dried or modified.
- the plastic substrate S is hardly heated because the electromagnetic wave is not absorbed, and the coating film C absorbs the energy of the electromagnetic wave, and the solvent, the dispersant and the like are mainly heated by the dielectric loss to be evaporated and removed.
- Metal nanoparticles, organic semiconductor materials, organic dielectric materials are selectively heated and modified by utilizing the difference between induction loss, dielectric loss, and magnetic loss according to the type of material. For this reason, the coating film obtained by irradiating electromagnetic waves exhibits extremely higher characteristics (electrical conductivity, semiconductor characteristics, dielectric characteristics) than before electromagnetic wave irradiation.
- the irradiation of the electromagnetic wave is stopped, and the device sheet D is conveyed until the part to be processed next to the device sheet D is placed on the mounting table 5, and the next Irradiate electromagnetic waves.
- the device is operated until the part to be processed next to the device sheet D is placed on the mounting table 5 by opening the shutters 2A and 2B.
- the sheet D is conveyed. Then, the same processing is performed. Such an operation is sequentially repeated, and electromagnetic wave annealing is performed to the end of the device sheet D.
- FIG. 7 is a cross-sectional view showing another example of a film forming apparatus for carrying out the film forming method according to the present embodiment.
- the film forming apparatus 100 includes a processing container 102 made of a material having an electromagnetic wave shielding function such as stainless steel (SUS) or aluminum.
- a cooling plate 103 made of non-doped silicon, aluminum nitride (AlN), silicon carbide (SiC), alumina (Al 2 O 3 ) or the like is disposed in the processing vessel 102, and a device sheet is placed on the cooling plate 103.
- 104 is placed.
- the device sheet 104 is configured by applying a coating film C having a predetermined pattern on a plastic substrate S by applying a coating composition containing a film component. That is, the cooling plate 103 functions as a support member for the device sheet 104.
- the device sheet 104 is carried in from the carry-in port 102a of the processing container 102 and carried out from the carry-out port 102b.
- a temperature controller 105 is connected to the cooling plate 103 to control the temperature of the substrate by controlling the temperature of the circulating cooling medium.
- the cooling plate 103 may be provided with a resistance heater, for example, so that it can be heated to a temperature lower than the heat resistance temperature of the plastic substrate S.
- a ring-shaped transmission antenna 106 that transmits electromagnetic waves is disposed at the upper part in the processing container 102 so as to face the cooling plate 103.
- the transmission antenna 106 is supplied with an alternating current having a frequency of, for example, about 100 Hz to 50 kHz from an alternating current power supply 108 via a matching device 107.
- a pulse / duty control unit 109 is connected to the AC power source 108 so that the AC current output from the AC power source 108 can be in the form of a pulse having a predetermined duty ratio.
- a matching load 112 is connected to a power supply line 111 for supplying power to the transmission antenna 106.
- a ring-shaped receiving antenna 110 that receives an electromagnetic wave transmitted from the transmitting antenna 106 is disposed below the cooling plate 103 at a position corresponding to the transmitting antenna 106.
- a ground wire 113 is connected to the receiving antenna 110, and a matching load 114 is connected to the ground wire 113.
- the film forming apparatus 100 has a control unit 120.
- the control unit 120 includes a microprocessor (computer), and controls each component in the film forming apparatus 100 by receiving signals from sensors, for example.
- the control unit 120 includes a storage unit that stores a process sequence of the film forming apparatus 100 and a process recipe that is a control parameter, an input unit, a display, and the like, and controls the film forming apparatus 100 according to the selected process recipe. It has become.
- a device sheet 104 having a coating film C formed by coating a coating composition containing a film component on a plastic substrate S such as PET, PEN, PC, PI or the like is carried from the carry-in entrance 102a and the cooling plate 103 is formed. Place on top.
- the cooling plate 103 is maintained at an appropriate temperature of about room temperature to about 100 ° C. by the temperature controller 105.
- an alternating current having a frequency of, for example, about 100 Hz to 50 kHz is supplied from the alternating current power source 108 to the transmitting antenna 106 via the matching device 107.
- a magnetic field penetrating through the transmission antenna 106 and the reception antenna 110 is generated, and the device sheet 104 is irradiated with electromagnetic waves having the frequency of the AC power supply 108 by electromagnetic induction.
- the pulse / duty control unit 109 may control the cooling of the plastic substrate S by setting the alternating current output from the alternating current power supply 108 as a pulse having a predetermined duty ratio.
- the device sheet 104 When the device sheet 104 is irradiated with electromagnetic waves in the processing container 102, the energy of the electromagnetic waves is absorbed by the coating film C, and the coating film C is dried and / or modified by induction loss or the like.
- solvents and dispersants are mainly heated by dielectric loss and removed by evaporation, and film components (metal nanoparticles, organic semiconductor materials, organic dielectric materials) are induced loss and dielectric loss depending on the type of material.
- film components metal nanoparticles, organic semiconductor materials, organic dielectric materials
- a conductive film having high electrical conductivity can be formed in the case of a coating film using metal nanoparticles, and an excellent semiconductor in the case of a coating film using an organic semiconductor material.
- a semiconductor film having characteristics can be formed.
- the dielectric characteristics inherent in the dielectric film for example, a gate A dielectric film having a large capacity, a small leakage current, high stability, and high reliability required for the insulating film can be formed.
- the plastic substrate S is hardly heated because electromagnetic waves are not absorbed.
- a film having good characteristics can be formed on the plastic substrate by using a coating printing technique.
- the electromagnetic wave to be irradiated has a frequency suitable for the coating composition.
- the coating composition contains Ag nanoparticles, one having a frequency of about 100 GHz is used.
- a P3HT CHCl 3 solution is used as the coating composition, in the dielectric dispersion of FIG. 3, electromagnetic waves in a frequency band (for example, 1 Hz to 10 kHz) corresponding to the peak of the imaginary part of the complex dielectric constant, preferably peak
- An electromagnetic wave having a frequency of 400 Hz as a position or a frequency in the vicinity thereof is irradiated.
- a PVP liquid is used as the coating composition, in the dielectric dispersion of FIG.
- an electromagnetic wave in a frequency band (for example, 100 Hz to 50 kHz) corresponding to the peak of the imaginary part of the complex dielectric constant, preferably at the peak position. Irradiate an electromagnetic wave having a frequency of 2 to 4 kHz or the vicinity thereof.
- the plastic substrate S Even if a special cooling mechanism is not used for the plastic substrate S, it is possible to selectively heat only the coating film C without transiently heating the plastic substrate S.
- the temperature of the substrate S may increase.
- the plastic substrate S is cooled by the cooling plate 103, or the electromagnetic wave is pulsed to control the duty ratio, whereby the temperature rise of the plastic substrate S can be more effectively suppressed. .
- a resistance heater or the like is provided on the cooling plate 103 so that the coating film C is heated in a range below the heat resistant temperature of the plastic substrate S. It can also be.
- the device sheet 4 is carried out from the carry-out port 102b.
- the temperature controller 105 is used in the film forming apparatus 100 of FIG. 7, the temperature controller 105 is not necessarily required when it can be sufficiently cooled by the heat capacity of the cooling plate 103.
- stable electromagnetic wave irradiation can be performed by using the transmission antenna 106 and the reception antenna 110, the reception antenna 110 is not necessarily required.
- FIG. 8 shows the structure of the film forming apparatus 100 ′ that does not have a temperature controller and a receiving antenna. Even with such a structure, the device sheet 104 is irradiated with electromagnetic waves in the same manner as the apparatus of FIG. 7. Then, the coating film C can be dried and / or modified without heating the plastic substrate S to form a desired film. Of course, a device in which either the temperature controller 105 or the receiving antenna 110 is omitted from the device of FIG.
- a coating film containing a film component is formed on a plastic substrate, and the coating film is irradiated with electromagnetic waves to dry and / or modify the coating film, thereby forming a film. Therefore, the plastic substrate is hardly heated, and a film having good characteristics can be formed on the plastic substrate without heating the plastic substrate to a high temperature.
- a film having good characteristics can be formed on the plastic substrate by coating and printing technology, and a conductive film, a semiconductor film, and a dielectric film can be applied as the film. It is suitable for use in forming a wiring, a semiconductor film, a gate insulating film and the like when a thin film transistor (TFT) is formed thereon. Moreover, it is suitable also for the use which forms the semiconductor film which is a photoelectric conversion element for solar cells on a plastic substrate.
- TFT thin film transistor
- a coating composition is applied to form a coating film pattern (for example, a wiring pattern)
- a film to be a wiring is formed by irradiating electromagnetic waves.
- the wiring pattern may be formed after applying an object to the entire surface of the plastic substrate to form a coating film and irradiating with electromagnetic waves.
- the coating composition may be sprayed in the form of a mist on a plastic substrate and then applied with electromagnetic waves, and then a wiring pattern may be formed.
- the coating composition can remove the solvent and the dispersant by electromagnetic waves while the coating composition is in a mist form, and the metal particles mainly adhere to the plastic substrate. Can be raised.
- the irradiated electromagnetic waves only in the coating film formed by applying the coating composition first Ar gas was treated coating film by the gas plasma by O 2 gas or H 2 gas, etc. You may make it irradiate electromagnetic waves later.
- the gas plasma is used to first remove the solvent and dispersant in the coating composition, and then irradiate electromagnetic waves mainly for the purpose of modifying (aggregating) the film components such as metal nanoparticles. .
- membrane component is accelerated
- the film forming apparatus in the above embodiment is merely an example, and the coating film formed on the plastic substrate is irradiated with electromagnetic waves to dry and / or modify the coating film while suppressing the temperature rise of the plastic substrate.
- the present invention is not limited to the above apparatus.
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Abstract
Description
図1は、本発明の一実施形態に係る配線の形成方法を示すフローチャートである。
P=1/2×πfσ|E|2+πfε0ε”r|E|2+πfμ0μ”r|H|2 (1)
ただし
P:単位体積あたりのエネルギー損失[W/m3]、E:電場[V/m]、H:磁場[A/m]、σ:電気伝導度[S/m]、f:周波数[s-1]、ε0:真空の誘電率[F/m]、ε”r:複素誘電率の虚数部、μ0:真空の透磁率[H/m]、μ”r:複素透磁率の虚数部
である。
電磁波の周波数に対応した吸収性を把握するためには、塗布膜の誘電分散を測定することが有効である。誘電分散は誘電関数の振動数(周波数)依存性をいう。物質は電子分極、イオン分極、配向分極等の種々の分極を生じるが、このような分極が生じる周波数で電磁波の吸収が大きくなる。そして、複素誘電率の虚数部がこのような吸収特性を示す。したがって、有機半導体材料を含む塗布組成物における複素誘電率の虚数部のピークに対応した周波数帯(例えば1Hz~10kHz)の電磁波を塗布膜に照射することにより、そのエネルギーをプラスチック基板に吸収させずに、塗布膜に有効に吸収させることができる。
上述したように塗布膜の誘電分散を測定した際の、複素誘電率の虚数部が吸収特性を示すため、有機誘電体材料を含む塗布組成物における複素誘電率の虚数部のピークに対応した周波数帯(例えば100Hz~50kHz)の電磁波を塗布膜に照射することにより、そのエネルギーをプラスチック基板に吸収させずに、塗布膜に有効に吸収させることができる。
図6は本実施形態に係る膜形成方法を実施するための膜形成装置の一例を示す断面図である。この膜形成装置1は、処理容器2、ガス導入機構3、排気機構4、載置台5、放射温度計6、電磁波供給部8、全体制御部9を有している。
処理容器2底部の周縁部には、排気機構4と接続される排気口25が設けられている。
まず、PET、PEN、PC、PI等のプラスチック基板Sに上記塗布組成物を塗布した塗布膜Cが形成されたデバイスシートDを準備し、電磁波発生源81から発生する電磁波(マイクロ波)を、塗布組成物に適合した周波数のものとする。例えば塗布組成物がAgナノ粒子を含むものである場合、100GHz程度の周波数のものを用いる。また、塗布組成物としてP3HTのCHCl3溶液を用いた場合には、図3の誘電分散において、複素誘電率の虚数部のピークに対応した周波数帯(例えば1Hz~10kHz)の電磁波、好ましくはピーク位置である400Hzまたはその近傍の周波数の電磁波を照射する。また、塗布組成物としてPVPの液体を用いた場合には、図5の誘電分散において、複素誘電率の虚数部のピークに対応した周波数帯(例えば100Hz~50kHz)の電磁波、好ましくはピーク位置である2~4kHzまたはその近傍の周波数の電磁波を照射する。
図7は本実施形態に係る膜形成方法を実施するための膜形成装置の他の例を示す断面図である。
まず、PET、PEN、PC、PI等のプラスチック基板S上に、膜成分を含む塗布組成物を塗布して塗布膜Cが形成されたデバイスシート104を搬入口102aから搬入して冷却板103の上に載置する。冷却板103は温調器105により室温~100℃程度の適宜の温度に保持される。
Claims (31)
- プラスチック基板上に膜成分を含む塗布組成物を塗布して塗布膜を形成することと、
前記塗布膜に電磁波を照射して塗布膜を乾燥および/または改質し、膜を形成することと
を含む、膜形成方法。 - 前記膜は導電体膜である、請求項1に記載の膜形成方法。
- 前記塗布組成物は金属ナノ粒子を含み、前記塗布膜に電磁波を照射して、前記金属ナノ粒子からなる配線となる塗布膜を形成する請求項2に記載の膜形成方法。
- 前記塗布膜は、前記アニールの前に配線パターンとして形成されており、前記電磁波は少なくとも前記配線パターンに照射される、請求項3に記載の膜形成方法。
- 前記塗布膜は前記プラスチック基板の全面に塗布された塗布膜であり、前記全面に塗布された塗布膜に電磁波を照射した後、配線パターンを形成する、請求項3に記載の膜形成方法。
- 電磁波を照射してアニールする前に、前記塗布膜をガスプラズマで処理する、請求項3に記載の膜形成方法。
- 前記プラスチック基板上に前記塗布組成物を噴霧して塗布しながら、電磁波を照射し、その後、前記プラスチック基板上に形成された塗布膜に配線パターンを形成する、請求項3に記載の膜形成方法。
- 前記塗布組成物は金属ナノ粒子と溶媒と分散剤とを含む、請求項3に記載の膜形成方法。
- 前記金属ナノ粒子は、Ag、Cu、Alのいずれか、またはこれらのいずれかを含む合金である、請求項3に記載の膜形成方法。
- 前記膜は半導体膜である、請求項1に記載の膜形成方法。
- 前記塗布組成物は有機半導体材料を含む、請求項10に記載の膜形成方法。
- 前記電磁波の周波数を、前記プラスチック基板に対する吸収性が低く、前記有機半導体材料を含む塗布組成物に対する吸収性が高くなる周波数に設定する、請求項11に記載の膜形成方法。
- 前記電磁波の周波数は、前記塗布組成物の誘電分散特性の吸収ピーク値またはその近傍の値である、請求項12に記載の膜形成方法。
- 前記塗布組成物は、有機半導体材料としてのポリ-3-ヘキシルチオフェン(P3HT)をクロロホルム(CHCl3)に溶解した溶液である、請求項11に記載の膜形成方法。
- 前記電磁波は、その周波数が1Hz~10kHzである、請求項11に記載の膜形成方法。
- 前記膜は誘電体膜である、請求項1に記載の膜形成方法。
- 前記塗布組成物は有機誘電体材料を含む、請求項16に記載の膜形成方法。
- 前記電磁波の周波数を、前記プラスチック基板に対する吸収性が低く、前記有機誘電体材料を含む塗布組成物に対する吸収性が高くなる周波数に設定する請求項17に記載の膜形成方法。
- 前記電磁波の周波数は、前記塗布組成物の誘電分散特性の吸収ピーク値またはその近傍の値である、請求項18に記載の膜形成方法。
- 前記塗布組成物は、有機誘電体材料であるポリビニルフェノールの液体である、請求項17に記載の膜形成方法。
- 前記電磁波は、その周波数が100Hz~50kHzである、請求項17に記載の膜形成方法。
- 前記プラスチック基板を冷却しながら電磁波を照射する、請求項1に記載の膜形成方法。
- 前記電磁波の照射はパルス的に行なわれる、請求項1に記載の膜形成方法。
- 前記プラスチック基板の耐熱温度以下の温度に基板を加熱しながら電磁波を照射する、請求項1に記載の膜形成方法。
- 内部に所定の雰囲気が形成される処理容器と、
プラスチック基板上に膜成分を含む塗布組成物が塗布されて塗布膜が形成された部材を前記処理容器内に配置する手段と、
前記部材の少なくとも前記塗布膜に電磁波を照射する電磁波照射部と
を具備し、
前記塗布膜に前記電磁波波照射部からの電磁波が照射されることにより、前記塗布膜が乾燥および/または改質されて膜が形成される、膜形成装置。 - 前記処理容器内に配置された前記部材の前記プラスチック基板の温度を制御する温度制御機構をさらに具備する、請求項25に記載の膜形成装置。
- 前記配置する手段は、前記塗布膜が形成された部材を支持する支持部材である、請求項25に記載の膜形成装置。
- 前記支持部材を介して前記プラスチック基板を冷却する冷却機構をさらに具備する、請求項27に記載の膜形成装置。
- 前記電磁波照射部は、電磁波をパルス状に照射する、請求項25に記載の膜形成装置。
- 前記支持部材上に支持された前記部材を加熱する加熱手段をさらに具備する、請求項26に記載の膜形成装置。
- 前記電磁波照射部は、前記電磁波の周波数を、前記塗布組成物に対する吸収性が高くなるように設定することが可能である、請求項25に記載の膜形成装置。
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