WO2012114803A1 - Poudre et film de tellurure de cadmium destinés à des cellules solaires, et cellule solaire - Google Patents

Poudre et film de tellurure de cadmium destinés à des cellules solaires, et cellule solaire Download PDF

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WO2012114803A1
WO2012114803A1 PCT/JP2012/051245 JP2012051245W WO2012114803A1 WO 2012114803 A1 WO2012114803 A1 WO 2012114803A1 JP 2012051245 W JP2012051245 W JP 2012051245W WO 2012114803 A1 WO2012114803 A1 WO 2012114803A1
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cdte
solar cell
film
powder
cadmium telluride
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English (en)
Japanese (ja)
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保 岡本
立一 平野
朗 野田
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Jx日鉱日石金属株式会社
独立行政法人国立高等専門学校機構
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Publication of WO2012114803A1 publication Critical patent/WO2012114803A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a CdTe powder used as a raw material for forming a cadmium telluride (CdTe) film, a cadmium telluride (CdTe) film for a solar cell using the CdTe powder, and a solar cell.
  • CdTe cadmium telluride
  • CdTe cadmium telluride
  • Solar power generation is power generation using solar cells, and solar cells directly convert light energy from the sun into electricity. Therefore, solar power generation is expected as an alternative energy source for fossil energy, and is attracting more attention as an energy source for dealing with global environmental problems. In order to put solar cells into practical use in the future, it is necessary to increase the light conversion efficiency by which the solar cells convert light energy into electrical energy, and to further improve efficiency.
  • Solar cells include at least one pair of semiconductor films having p-type and n-type characteristics, and those using semiconductors such as silicon (Si) and compound are in practical use.
  • CdTe has a forbidden band width (band gap) of about 1.5 eV, and has high consistency with the spectrum of sunlight. Therefore, CdTe can be said to be an optimum material for absorbing solar light energy. Therefore, CdTe is used as an effective material for forming a photoelectric conversion layer for solar cells having high light conversion efficiency.
  • the CdTe film is mainly formed using a close sublimation (CSS) method or a vapor transport deposition (VTD) method. Is done. At this time, the CdTe raw material is used as a raw material for forming the CdTe film.
  • CCS close sublimation
  • VTD vapor transport deposition
  • These film forming methods are methods in which a raw material powder containing CdTe as a main component is heated and vaporized and supplied to a substrate, and CdTe is formed on a thin film forming substrate.
  • CdTe exhibits p-type conductivity even when no impurity is added (doping).
  • the carrier concentration is low, when a non-doped film is used as the p-type semiconductor of the solar cell, The light conversion efficiency was quite low.
  • a powder or raw material in which a compound containing a group I and / or group V element or an organometallic compound is mixed as an additive to a powder containing CdTe as a main component is added to a powder or a paste by adding a solvent or a binder.
  • a method for producing a CdTe film is proposed in which a CdTe film is produced by using a material coated on a support (CdTe paste) as a raw material for the CSS method, and the carrier concentration is increased (see, for example, Patent Document 1).
  • the present invention has been made in view of the above, and an object thereof is to provide a CdTe powder for a solar cell, a CdTe film for a solar cell, and a solar cell capable of producing a CdTe film containing an acceptor impurity.
  • CdTe powder for solar cells CdTe films for solar cells, and solar cells.
  • a CdTe film obtained by using a raw material powder containing a predetermined amount of acceptor impurities and containing CdTe as a main component is used as a p-type semiconductor of a solar cell.
  • the relationship between the solar cell and the light conversion efficiency was clarified.
  • the CdTe powder for solar cells of the present invention is characterized by containing cadmium, tellurium, and acceptor impurities, and having an impurity concentration of 1 ⁇ 10 16 cm ⁇ 3 or more and 1 ⁇ 10 20 cm ⁇ 3 or less.
  • the acceptor impurity is at least one element selected from the group consisting of antimony, arsenic, bismuth, phosphorus, nitrogen, lithium, potassium, sodium, rubidium, copper, silver, gold, and at least one of the groups It is preferably a metal compound containing one element or at least one of an organometallic compound containing at least one element of the group.
  • the CdTe film for solar cells of the present invention is characterized in that it contains cadmium, tellurium, and acceptor impurities, and has an impurity concentration of 1 ⁇ 10 16 cm ⁇ 3 or more and 1 ⁇ 10 20 cm ⁇ 3 or less.
  • the acceptor impurity is at least one element selected from the group consisting of antimony, arsenic, bismuth, phosphorus, nitrogen, lithium, potassium, sodium, rubidium, copper, silver, gold, and at least one of the groups It is preferably a metal compound containing one element or at least one of an organometallic compound containing at least one element of the group.
  • the solar cell of the present invention includes the CdTe film for solar cell described above.
  • the method for producing a CdTe film for a solar cell of the present invention uses a cadmium telluride powder containing acceptor impurities and having an impurity concentration of 1 ⁇ 10 16 cm ⁇ 3 or more and 1 ⁇ 10 20 cm ⁇ 3 or less as a raw material. It is characterized by producing.
  • the CdTe powder has at least one element selected from the group consisting of antimony, arsenic, bismuth, phosphorus, nitrogen, lithium, potassium, sodium, rubidium, copper, silver, and gold as the acceptor impurity. It is preferable to use at least one of a metal compound containing at least one element of the group, or an organometallic compound containing at least one element of the group.
  • the present invention it is possible to produce a CdTe film containing acceptor impurities. As a result, a CdTe film having a high carrier concentration can be obtained. Therefore, when the CdTe film is used as a p-type semiconductor of a solar cell, the light conversion efficiency of the solar cell can be further improved.
  • FIG. 1 is a cross-sectional view showing an example of a reaction apparatus used for producing a CdTe film for a solar cell.
  • FIG. 2 is a schematic cross-sectional view showing an example of a solar cell.
  • the CdTe powder for solar cell according to this embodiment contains cadmium (Cd), tellurium (Te), and acceptor impurities, and has an impurity concentration of 1 ⁇ 10 16 cm ⁇ 3 or more and 1 ⁇ 10 20 cm ⁇ 3 or less.
  • the solar cell CdTe powder according to the present embodiment contains Cd and Te as main components.
  • the solar cell CdTe powder according to this embodiment is obtained by mixing acceptor impurities in advance with a CdTe single crystal powder.
  • the acceptor impurity is an impurity element contained in the solar cell CdTe powder according to the present embodiment other than Cd and Te.
  • an impurity is an element added for the purpose of controlling the polarity (p-type, n-type) and carrier density of a semiconductor.
  • An acceptor impurity refers to an additive substance that can form holes in a p-type semiconductor (a state in which electrons are insufficient).
  • Acceptor impurities include, for example, antimony (Sb), arsenic (As), bismuth (Bi), phosphorus (P), nitrogen (N), lithium (Li), potassium (K), sodium (Na), and rubidium (Rb).
  • At least one element selected from the group consisting of copper (Cu), silver (Ag), and gold (Au), a metal compound containing at least one element of the group, or an organic metal containing at least one element of the group At least one such as a compound is shown.
  • An example of the metal compound is antimony telluride.
  • the organometallic compound is, for example, at least one selected from the group consisting of triphenylantimony, antimony octylate, triphenylbismuth, triphenylphosphine, triphenyl phosphate, triphenyl phosphite, triallylphosphine, and triallylamine.
  • the acceptor impurity is preferably P, N, or Sb, and particularly preferably Sb.
  • acceptor impurities generally emit electrons or generate holes.
  • the acceptor impurity in the present embodiment generates holes and takes charge of electrical conduction in the p-type semiconductor.
  • the solar cell CdTe powder according to the present embodiment contains acceptor impurities, and when a CdTe film is formed using the solar cell CdTe powder according to the present embodiment, holes in the CdTe polycrystal containing the acceptor impurity are formed. Many carriers can be formed. As a result, a p-type semiconductor with a high carrier concentration can be manufactured.
  • the impurity concentration of the solar cell CdTe powder according to this embodiment is 1 ⁇ 10 16 cm ⁇ 3 or more and 1 ⁇ 10 20 cm ⁇ 3 or less.
  • the impurity concentration is more preferably 1 ⁇ 10 17 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 , and still more preferably 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 .
  • a higher carrier concentration is preferable, but since there is a correlation with the n-type carrier concentration of the pn junction partner, a carrier concentration in the above range is preferable in this embodiment.
  • a CdTe film containing acceptor impurities can be obtained by including a predetermined amount of acceptor impurities in CdTe, as will be described later.
  • a CdTe film having a high carrier concentration is obtained. Therefore, when the CdTe film produced from the CdTe powder for solar cell according to this embodiment is used as a p-type semiconductor layer of the solar cell, the light conversion efficiency of the solar cell is increased. Further improvement can be achieved. Further, by adjusting the amount of acceptor impurities added to CdTe, the carrier concentration of CdTe powder can be increased and the carrier concentration can be adjusted.
  • a powder or raw material obtained by mixing a powder mainly composed of CdTe and an additive is added to a solvent or a binder to form a liquid or a paste, which is applied on a support (CdTe
  • CdTe In the case of producing a CdTe film using a paste), it is necessary to print the CdTe paste on a support, apply it, and then fire it, so that the number of steps required to produce the CdTe film increases and the cost increases.
  • the CdTe film can be formed by directly heating the CdTe powder in a powder state.
  • a process such as applying a paste as a raw material of the CdTe film on the support becomes unnecessary. Since the CdTe powder can be used as a raw material for forming the CdTe film in a powder state, the cost required for producing the CdTe film can be reduced.
  • the solar cell CdTe film is produced using the solar cell CdTe powder according to the present embodiment as a raw material. Since the CdTe powder for solar cells according to this embodiment is a CdTe polycrystal containing a predetermined amount of acceptor impurities in CdTe as described above, many holes are generated in the CdTe from the acceptor impurities. Therefore, the CdTe film for solar cells formed using the CdTe powder for solar cells according to this embodiment has a high carrier concentration. For this reason, as will be described later, the solar cell CdTe film using the solar cell CdTe film as a photoelectric conversion layer can be a solar cell having high light conversion efficiency.
  • FIG. 1 is a cross-sectional view showing an example of a reaction apparatus used for producing a CdTe film for a solar cell.
  • the reaction apparatus 10 includes a chamber 11, a pair of susceptors 12 and 13, and a heater 14.
  • the chamber 11 is a tube made of, for example, quartz.
  • the pair of susceptors 12 and 13 are provided in the chamber 11 and are made of carbon or the like.
  • the heater 14 is not particularly limited as long as the inside of the chamber 11 can be heated, and examples thereof include an infrared lamp heater.
  • a pair of susceptors 12 and 13 are disposed in the chamber 11, and the CdTe powder for solar cells according to the present embodiment is disposed on the susceptor 12 as the semiconductor material 15.
  • the semiconductor material 15 As the semiconductor material 15, the CdTe powder for solar cell according to the present embodiment is used.
  • Spacers 16 are provided at both ends of the susceptor 12.
  • the substrate 17 is arranged close to the semiconductor material 15 and the substrate 17 with a gap of about 0.1 mm to several mm through the spacer 16.
  • the surface of the substrate 17 opposite to the semiconductor material 15 side is covered with the susceptor 13.
  • An inert gas 18 is supplied into the chamber 11, and air or the inert gas 18 in the chamber 11 is sucked by a rotary pump 19 to form a vacuum state.
  • the inert gas 18 include argon gas and nitrogen gas.
  • the atmosphere in the chamber 11 is replaced with an inert gas 18 to keep the inside of the chamber 11 at about 133.32 Pa to 2666.44 Pa.
  • the susceptors 12 and 13 are heated to a temperature range of about 400 ° C. to 800 ° C. by the heater 14, and the temperature of the semiconductor material 15 is set higher than that of the substrate 17 and is held for a certain time.
  • CdTe When the semiconductor material 15 is heated in the inert gas 18, CdTe is vaporized into Cd + 1 / 2Te 2 vapor and scattered from the semiconductor material 15 on the susceptor 12, and CdTe is formed on the substrate 17. Similarly, acceptor impurities contained in the CdTe powder are also vaporized and scattered from the semiconductor material 15 on the susceptor 12, and a carrier substance is formed on the substrate 17. Thereby, a CdTe film for a solar cell containing acceptor impurities and CdTe is formed on the surface of the substrate 17.
  • a CdTe powder for a solar cell is produced using a CSS method using CdTe powder as a raw material.
  • the present embodiment is not limited to this and uses a VTD method or the like.
  • a CdTe film for a solar cell may be produced.
  • FIG. 2 is a schematic cross-sectional view showing an example of a solar cell.
  • the solar cell 20 includes a translucent heat-resistant substrate 21, a translucent conductive film 22, a metal sulfide layer 23, a CdTe layer 24, an ohmic electrode 25, a metal electrode (collector). Electrode) 26.
  • the translucent heat-resistant substrate 21 has a property of transmitting light having a wavelength that can contribute to photoelectric conversion in the semiconductor layer.
  • a substrate having translucency and strength is used, and examples thereof include borosilicate glass and soda lime glass.
  • the translucent conductive film 22 is provided on the translucent heat-resistant substrate 21.
  • the light-transmitting conductive film 22 include a film made of a tin oxide such as a tin oxide film and an indium tin oxide film, and a zinc oxide film. Among these, a tin oxide film is particularly preferable.
  • the film thickness of the translucent conductive film 22 is preferably, for example, 100 nm or more and 1000 nm or less from the viewpoint of achieving both light transmittance and conductivity.
  • the metal sulfide layer 23 is laminated on the translucent conductive film 22.
  • the metal sulfide layer 23 is a layer containing a metal sulfide and functions as an n-type semiconductor layer.
  • the metal sulfide include cadmium sulfide and zinc sulfide. These may be used alone or in combination. Of these, cadmium sulfide and a mixture of cadmium sulfide and zinc sulfide are preferable.
  • the film thickness of the metal sulfide layer is preferably, for example, 50 nm or more and 500 nm or less.
  • the CdTe layer 24 is laminated on the metal sulfide layer 23.
  • the CdTe layer 24 is formed using a solar cell CdTe film formed by including the solar cell CdTe powder according to this embodiment, and functions as a p-type semiconductor layer.
  • the thickness of the CdTe layer 24 is preferably, for example, 1 ⁇ m or more and 10 ⁇ m or less from the viewpoint of achieving both light absorption efficiency and conductivity.
  • the ohmic electrode 25 is an electrode provided in the CdTe layer 24 and in ohmic contact with the CdTe layer 24.
  • the ohmic electrode 25 is formed of a material such as carbon or nickel, for example.
  • the metal electrode 26 is provided on the electrode 25 and the exposed translucent conductive film 22.
  • the metal electrode 26 is formed of, for example, a mixture containing one or more of aluminum (Al), silver (Ag), and indium (In).
  • the translucent heat-resistant substrate 21 is set to a predetermined dimension (for example, 100 mm ⁇ 100 mm ⁇ 1 mm), and then the translucent conductive film having a predetermined film thickness (for example, 600 nm) is formed on the translucent heat-resistant substrate 21.
  • a film 22 is provided.
  • a metal having a predetermined film thickness (for example, 50 nm) is formed on the translucent conductive film 22 by inducing a gas generated by heating cadmium dimethyldithiocarbamate to about 280 ° C. on the translucent conductive film 22 for 60 seconds.
  • a sulfide layer 23 is formed.
  • a CdTe layer 24 having a predetermined film thickness (for example, 5 ⁇ m) is formed on the metal sulfide layer 23.
  • the substrate 17 shown in FIG. The CdTe layer 24 is formed using the translucent heat-resistant substrate 21 on which the physical layer 23 is formed.
  • the metal sulfide layer 23 and the CdTe layer 24 around the portion that becomes the light receiving surface are peeled off by using, for example, laser scribe (wavelength 1.05 ⁇ m), and the translucent conductive film 22 is exposed.
  • An ohmic electrode 25 is formed on the CdTe layer 24, and a metal electrode 26 is formed on the ohmic electrode 25 and the exposed translucent conductive film 22. Thereby, the solar cell 20 is obtained.
  • the solar cell 20 uses a solar cell CdTe film formed using the solar cell CdTe powder according to the present embodiment for the CdTe layer 24. For this reason, since the carrier concentration in the CdTe layer 24 is high, the open-circuit voltage and the fill factor of the solar cell 20 are improved, and the light conversion efficiency can be improved.
  • the CdTe layer 24 has a single-layer structure, but the solar cell 20 is not limited to the single-layer structure CdTe layer 24, and may have a multilayer structure.
  • the solar cell CdTe powder according to the present embodiment can be used as a photoelectric conversion layer of a solar cell by forming a CdTe film, but the present embodiment is not particularly limited to this, The present invention can also be suitably used for manufacturing integrated circuits using various semiconductor materials.
  • Example 1> (Preparation of CdTe powder containing Sb) 6N-Cd: 716 g, 6N-Te: 813 g, Sb 2 Te 3 : 4 mg were put into a PBN boat, respectively, and then the PBN boat was placed in a quartz ampule, and the inside of the quartz ampule was vacuumed by the rotary pump 19. Then, nitrogen gas was introduced into the quartz ampule to keep it at 1 ⁇ 10 ⁇ 4 Pa to 5 ⁇ 10 ⁇ 4 Pa, and then sealed with a hydrogen burner. This quartz ampoule was raised to about 1200 ° C. with a heater to produce CdTe polycrystal.
  • the produced polycrystalline CdTe was pulverized to obtain a CdTe powder.
  • the Sb concentration of the obtained CdTe powder was about 1 ⁇ 10 16 cm ⁇ 3 .
  • generated CdTe powder was measured using the glow discharge mass spectrometry (Glow Discharge Mass Spectrometry: GDMS).
  • An organic solvent solution of dimethyltin dichloride was sprayed on a glass substrate made of borosilicate glass.
  • a glass substrate coated by spraying an organic solvent solution of dimethyltin dichloride is thermally decomposed on the glass substrate in a muffle furnace heated to 450 ° C. in an air atmosphere to form SnO having a thickness of about 500 nm.
  • a transparent conductive film consisting of 2 was prepared.
  • an organic solvent solution of cadmium dibutyldithiocarbamate was sprayed on a transparent conductive film on a glass substrate and applied.
  • a CdS film having a thickness of about 100 nm was formed on the transparent conductive film by pyrolysis.
  • a CdTe film having a thickness of about 5 ⁇ m was formed on the CdS film.
  • the method for producing the CdTe layer on the CdS film was performed in the same manner as in the case of producing the CdTe layer 24 on the metal sulfide layer 23 shown in FIG.
  • a carbon film that was an ohmic electrode for the CdTe film was formed, and an Ag electrode was formed on the carbon film.
  • an Ag electrode was formed as a current collector on the CdS film side. This produced the solar cell element.
  • Example 2 (Preparation of CdTe powder containing Sb) Example 1 except that the amount of Cd, Te, Sb 2 Te 3 blended when producing CdTe powder was changed to 6N-Cd: 716 g, 6N-Te: 813 g, Sb 2 Te 3 : 40 mg I went there.
  • the Sd concentration of the CdTe powder produced in this example was about 1 ⁇ 10 17 cm ⁇ 3 .
  • Example 3 (Preparation of CdTe powder containing Sb) Example 1 except that the blending amounts of Cd, Te, Sb 2 Te 3 in preparing CdTe powder were changed to 6N-Cd: 716 g, 6N-Te: 813 g, and Sb 2 Te 3 : 0.14 g. And performed in the same manner.
  • the Sd concentration of the CdTe powder produced in this example was about 1 ⁇ 10 18 cm ⁇ 3 .
  • a solar cell element was produced in the same manner as in Example 1.
  • Example 4 (Preparation of CdTe powder containing Sb) Example 1 except that the blending amounts of Cd, Te, and Sb 2 Te 3 at the time of preparing the CdTe powder were changed to 6N—Cd: 716 g, 6N—Te: 813 g, and Sb 2 Te 3 : 4.17 g. And performed in the same manner.
  • the Sd concentration of the CdTe powder produced in this example was about 1 ⁇ 10 19 cm ⁇ 3 .
  • a solar cell element was produced in the same manner as in Example 1.
  • Example 5 (Preparation of CdTe powder containing Sb) Example 1 except that the blending amounts of Cd, Te, and Sb 2 Te 3 in preparing CdTe powder were changed to 6N—Cd: 716 g, 6N—Te: 813 g, and Sb 2 Te 3 : 41.7 g. And performed in the same manner.
  • the Sb concentration of the CdTe powder produced in this example was about 1 ⁇ 10 20 cm ⁇ 3 .
  • a solar cell element was produced in the same manner as in Example 1.
  • Example 2 (Preparation of CdTe powder containing Sb) Example 1 except that the blending amounts of Cd, Te, and Sb 2 Te 3 in preparing CdTe powder were changed to 6N-Cd: 716 g, 6N-Te: 813 g, and Sb 2 Te 3 : 162.2 g. And performed in the same manner.
  • the Sb concentration of the produced CdTe powder was about 1 ⁇ 10 21 cm ⁇ 3 .
  • a solar cell element was produced in the same manner as in Example 1.
  • Table 1 shows the measurement results of the Sb concentration and the film thickness d of the CdTe film in Examples 1 to 5 and Comparative Examples 1 and 2.
  • the light conversion efficiency of the solar cell element obtained using the CdTe powder having an Sb concentration of 1 ⁇ 10 16 cm ⁇ 3 was about 14% (see Example 1). Moreover, the light conversion efficiency of the solar cell element obtained using the CdTe powder having an Sb concentration of 1 ⁇ 10 17 cm ⁇ 3 was about 15% (see Example 2). Moreover, the light conversion efficiency of the solar cell element obtained using the CdTe powder having an Sb concentration of 1 ⁇ 10 18 cm ⁇ 3 was about 16% (see Example 3). Moreover, the light conversion efficiency of the solar cell element obtained using the CdTe powder having an Sb concentration of 1 ⁇ 10 19 cm ⁇ 3 was about 15% (see Example 4).
  • the light conversion efficiency of the solar cell element obtained using the CdTe powder having an Sb concentration of 1 ⁇ 10 20 cm ⁇ 3 was about 13% (see Example 5). Therefore, it was confirmed that the light conversion efficiency of the solar cell element obtained using the CdTe powder decreases as the Sb concentration contained in CdTe increases. This is considered to be due to the fact that the light conversion efficiency was lowered by Sb in which no hole was formed from Sb.
  • the light conversion efficiency of the solar cell element obtained using the Sb concentration of 1 ⁇ 10 15 cm ⁇ 3 or 1 ⁇ 10 21 cm ⁇ 3 CdTe powder was about 5% (see Comparative Examples 1 and 2). ). Therefore, it can be said that the light conversion efficiency of the solar cell obtained using the CdTe powder can be increased by setting the Sb concentration contained in the CdTe powder within an appropriate predetermined range.

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Abstract

D'après la présente invention, une poudre de CdTe destinée à des cellules solaires contient du Cd, du Te et une impureté de type accepteur, la concentration en impureté se situant entre 1 × 1016 cm-3 et 1 × 1020 cm-3 (valeurs comprises). Il est par conséquent possible de produire un film de CdTe auquel il est ajouté une impureté de type accepteur, ce qui permet d'améliorer encore l'efficacité de conversion de la lumière d'une cellule solaire quand le film de CdTe fait office de couche semi-conductrice de type p de la cellule solaire.
PCT/JP2012/051245 2011-02-24 2012-01-20 Poudre et film de tellurure de cadmium destinés à des cellules solaires, et cellule solaire WO2012114803A1 (fr)

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Publication number Priority date Publication date Assignee Title
WO2014156597A1 (fr) 2013-03-29 2014-10-02 Jx日鉱日石金属株式会社 Monocristaux de semi-conducteur composite pour des éléments de conversion photoélectrique, éléments de conversion photoélectrique et procédé de production de monocristaux de semi-conducteur composite pour des éléments de conversion photoélectrique

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187749A (ja) * 1997-09-02 1999-03-30 Matsushita Denchi Kogyo Kk 太陽電池用半導体膜の形成方法および太陽電池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187749A (ja) * 1997-09-02 1999-03-30 Matsushita Denchi Kogyo Kk 太陽電池用半導体膜の形成方法および太陽電池

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
O.VIGIL-GALAN ET AL.: "Physical properties of Bi doped CdTe thin films grown by the CSVT method", SOLAR ENERGY MATERIALS & SOLAR CELLS, vol. 90, 11 May 2006 (2006-05-11), pages 2228 - 2234 *
T.L.CHU: "THIN FILM CADMIUM TELLURIDE SOLAR CELLS BY TWO CHEMICAL VAPOR DEPOSITION TECHNIQUES", SOLAR CELLS, vol. 23, 1988, pages 31 - 48 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014156597A1 (fr) 2013-03-29 2014-10-02 Jx日鉱日石金属株式会社 Monocristaux de semi-conducteur composite pour des éléments de conversion photoélectrique, éléments de conversion photoélectrique et procédé de production de monocristaux de semi-conducteur composite pour des éléments de conversion photoélectrique
US9362431B2 (en) 2013-03-29 2016-06-07 Jx Nippon Mining & Metals Corporation Compound semiconductor single crystal ingot for photoelectric conversion devices, photoelectric conversion device, and production method for compound semiconductor single crystal ingot for photoelectric conversion devices

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