JP2015233139A - 原子層蒸着法で形成されたバッファ層を含む太陽電池、及び、その製造方法 - Google Patents
原子層蒸着法で形成されたバッファ層を含む太陽電池、及び、その製造方法 Download PDFInfo
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000031700 light absorption Effects 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 29
- 229910052711 selenium Inorganic materials 0.000 claims description 20
- 229910052717 sulfur Inorganic materials 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000011734 sodium Substances 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 13
- 229910007709 ZnTe Inorganic materials 0.000 claims description 9
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 9
- 239000005361 soda-lime glass Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 abstract description 14
- 239000003513 alkali Substances 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 20
- 239000011701 zinc Substances 0.000 description 18
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 238000005470 impregnation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 4
- -1 chalcogenide compound Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- VTLHPSMQDDEFRU-UHFFFAOYSA-N tellane Chemical compound [TeH2] VTLHPSMQDDEFRU-UHFFFAOYSA-N 0.000 description 1
- 229910000059 tellane Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
前記基板(10)は、一般に、ガラス基板が用いられ得、セラミック基板、金属基板またはポリマー基板等も用いられ得る。例えば、ガラス基板としては、ソーダ石灰ガラスまたは高変形点ソーダガラス(high strained point soda glass)基板を用いることができ、金属基板としては、ステンレス鋼またはチタニウムを含む基板を用いることができ、ポリマー基板としては、ポリイミド(polyimide)基板を用いることができる。
前記後面電極層(20)は、前記基板(10)上に形成され、導電層として、Mo等の金属を含むことができる。
前記光吸収層(30)は、前記後面電極層(20)上に形成されるものであって、前記光吸収層(30)は、前記後面電極層(20)上に光吸収層物質を蒸着及び熱処理して形成される。
前記バッファ層(40)は、前記光吸収層(30)上に形成されるものであり、O−free第1バッファ層(41)及び第2バッファ層(42)を含む。
前記前面電極層(50)は、前記バッファ層(40)上に形成されるものであり、前記前面電極層(50)は、前記光吸収層(30)とpn接合を形成するウィンドウ(window)層であって、スパッタリング等によりZnO、アルミニウム(Al)またはアルミナ(Al2O3)でドープされたZnO、ITO等で形成され得る。
ソーダ石灰ガラス基板上に製造されたMo系合金をDCスパッタリング方法でコートし、0.5μmの後面電極層を形成した。後面電極層上にCu、In、Ga、及びSe前駆体をDCスパッタリング方法で蒸着した後、Se雰囲気下で550℃で30〜60分間熱処理し、2μmのCIGS系化合物を含む光吸収層を形成した。300×300×15mm3〜700×1000×700mm3の体積のチャンバで光吸収層の表面を100〜5000sccmの流量で供給されるH2Sに2分間含浸させた。
第1バッファ層の具体的な原子層蒸着法において、工程サイクルを2回繰り返して行ったことを除いては、実施例1と同様にした。
第1バッファ層の具体的な原子層蒸着法において、工程サイクルを6回繰り返して行ったことを除いては、実施例1と同様にした。
光吸収層の表面をH2Sに含浸せず、第1バッファ層を形成しないことを除いては、実施例1と同様にした。
((1)太陽電池の因子別性能評価)
実施例1〜3及び比較例1によって製造された太陽電池の因子別性能を評価し、その結果は、表1及び図3に示した。
Claims (16)
- 基板;
前記基板上に形成された後面電極層;
前記後面電極層上に形成された光吸収層;
前記光吸収層上に原子層蒸着法(ALD)で形成されたO−free第1バッファ層と、前記第1バッファ層上に原子層蒸着法(ALD)で形成された第2バッファ層と、を含むバッファ層;及び
前記バッファ層上に形成された前面電極層を含む太陽電池。 - 前記第1バッファ層は、ZnS、ZnSe及びZnTeからなる群から選択された一つ以上を含む、請求項1に記載の太陽電池。
- 前記第1バッファ層のバンドギャップエネルギーは、3.5eV〜3.7eVである、請求項1に記載の太陽電池。
- 前記第1バッファ層の厚さは、0.2nm〜2nmである、請求項1に記載の太陽電池。
- 前記第2バッファ層は、Zn、O、Zn、(S、SeまたはTe)の原子層が交互積層されたものである、請求項1に記載の太陽電池。
- 前記第2バッファ層は、ZnO、Zn(O,S)、Zn(O,Se)及びZn(O,Te)からなる群から選択された一つ以上を含む第2−1バッファ層と、ZnS、ZnSe及びZnTeからなる群から選択された一つ以上を含む第2−2バッファ層が交互積層されたものである、請求項1に記載の太陽電池。
- 前記第2−1バッファ層と前記第2−2バッファ層の厚さ比は、3:1〜10:1である、請求項6に記載の太陽電池。
- 前記第2バッファ層の厚さは、4nm〜50nmである、請求項1に記載の太陽電池。
- 前記バッファ層のNa含量は、0.5at%〜2at%である、請求項1に記載の太陽電池。
- 前記バッファ層のNa含量は、前記光吸収層と接触する表面でピーク値を有する、請求項1に記載の太陽電池。
- 前記基板は、ソーダ石灰ガラス基板である、請求項1に記載の太陽電池。
- 前記ソーダ石灰ガラス基板のNa含量は、13at%〜15at%である、請求項1に記載の太陽電池。
- (a)基板上に後面電極層を形成するステップ;
(b)前記後面電極層上に光吸収層を形成するステップ;
(c)前記光吸収層の表面を前処理するステップ;
(d)前記表面前処理された光吸収層上に原子層蒸着法(ALD)でO−free第1バッファ層を形成した後、前記第1バッファ層上に原子層蒸着法(ALD)で第2バッファ層を形成するステップ;及び
(e)前記第2バッファ層上に前面電極層を形成するステップを含む、太陽電池の製造方法。 - 前記(c)ステップにおいて、表面前処理は、前記光吸収層の表面を、H2S、H2Se、及びH2Teからなる群から選択された一つ以上に含浸させることである、請求項13に記載の太陽電池の製造方法。
- 前記(d)ステップにおいて、第1バッファ層は、ZnS、ZnSe、及びZnTeからなる群から選択された一つ以上を含む、請求項13に記載の太陽電池の製造方法。
- 前記(d)ステップにおいて、第1バッファ層の原子層蒸着(ALD)は、金属前駆体ガスを注入するステップ、第1パージステップ、反応ガスを注入するステップ、及び第2パージステップを含む工程サイクルが1回〜10回繰り返して行われる、請求項13に記載の太陽電池の製造方法。
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CN109560150B (zh) * | 2018-12-06 | 2020-03-24 | 湖北大学 | 一种m面BeZnOS基非P-N结型透明薄膜太阳能电池及其制备方法 |
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CN110459630A (zh) * | 2019-06-18 | 2019-11-15 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池及其制备方法 |
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