WO2012111927A9 - 화합물 및 이를 이용한 유기전기소자, 그 전자장치, 내열성 측정법 - Google Patents
화합물 및 이를 이용한 유기전기소자, 그 전자장치, 내열성 측정법 Download PDFInfo
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- WO2012111927A9 WO2012111927A9 PCT/KR2012/000808 KR2012000808W WO2012111927A9 WO 2012111927 A9 WO2012111927 A9 WO 2012111927A9 KR 2012000808 W KR2012000808 W KR 2012000808W WO 2012111927 A9 WO2012111927 A9 WO 2012111927A9
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- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000004896 high resolution mass spectrometry Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011593 sulfur Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/43—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
- C07C211/57—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
- C07C211/61—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton with at least one of the condensed ring systems formed by three or more rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/43—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
- C07C211/57—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
- C07C211/60—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton containing a ring other than a six-membered aromatic ring forming part of at least one of the condensed ring systems
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/06—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members
- C07C2603/10—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings
- C07C2603/12—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings only one five-membered ring
- C07C2603/18—Fluorenes; Hydrogenated fluorenes
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/40—Ortho- or ortho- and peri-condensed systems containing four condensed rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/93—Spiro compounds
- C07C2603/94—Spiro compounds containing "free" spiro atoms
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1011—Condensed systems
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1022—Heterocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a compound and an organic electric device using the same, an electronic device thereof, and a method for measuring heat resistance.
- the flat panel display plays a very important role in supporting a highly visual information society which is rapidly growing in recent years.
- the organic electroluminescent device capable of low-voltage driving with self-luminous type has better viewing angle and contrast ratio than liquid crystal display devices, which are mainstream flat panel display devices.
- organic electroluminescent devices are notable for backlighting and can be manufactured in a light weight and thin form. In addition, they have advantages in terms of power consumption, and are attracting attention as next generation display devices due to their fast response speed and wide color reproduction range.
- an organic electronic device is formed on a glass substrate in the order of an anode, an organic thin film including a light emitting region, and a cathode.
- the organic thin film may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), or an electron injection layer in addition to the emitting layer (EML).
- EIL electron injection layer
- EBL electron blocking layer
- HBL hole blocking layer
- the light emitting excitation thus formed emits light while transitioning to ground states.
- the light emitting layer (guest) may be doped into the light emitting layer (host) to increase the efficiency and stability of the light emitting state.
- the life of the device is important, and various studies are being conducted to increase the life of the organic electronic device.
- An object of the present invention is to improve the electrical stability, luminous efficiency, device life and manufacturing efficiency of the organic electric device.
- the present invention is to provide a hole injection layer and a transport layer material having a low driving voltage characteristics, high heat resistance and long life, and an organic electric element comprising the same.
- the present invention provides a compound which is represented by one of the following formulas or comprises at least one of the following formulas.
- the present invention provides an organic electronic device and an electronic device including the organic material layer containing the above compound.
- the present invention can improve the electrical stability, luminous efficiency, device life and manufacturing efficiency of the organic electric device.
- the present invention can provide a hole injection layer and a transport layer material having low driving voltage characteristics, high heat resistance and long life, an organic electric element including the same, and an electronic device thereof.
- 1 to 6 show examples of the organic light emitting display device to which the compound of the present invention can be applied.
- the present invention relates to a hole injection layer and a hole transport layer material having low driving voltage characteristics, an organic electroluminescent device comprising the same, and an electronic device thereof.
- the flat panel display plays a very important role in supporting a highly visual information society, centered on the internet which is rapidly growing in recent years.
- the organic light emitting device organic EL device
- the organic light emitting device capable of low voltage driving with a self-emission type has an excellent viewing angle and contrast ratio, and requires no backlight, compared to a liquid crystal display (LCD), which is a mainstream of flat panel display devices.
- LCD liquid crystal display
- Light weight and thinness are possible, and it has an advantage in terms of power consumption.
- the fast response speed and wide color reproduction range have attracted attention as a next generation display device.
- an organic light emitting display device is formed on a glass substrate in order of an anode made of a transparent electrode, an organic thin film including a light emitting region, and a metal electrode.
- the organic thin film may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), or an electron injection layer in addition to the emitting layer (EML).
- EIL may further include an electron blocking layer (EBL) or a hole blocking layer (HBL) due to light emission characteristics of the light emitting layer.
- the light emitting excitation emits light as it transitions to ground states, in which a light emitting layer (guest) is doped into the light emitting layer (host) to increase the efficiency and stability of the light emitting state.
- a light emitting layer guest
- the life of the device is important, and various studies are currently being conducted to increase the life of the organic electroluminescent device.
- ITO anode electrode
- the low glass transition temperature of the hole transport layer material has been reported to have a significant effect on the device life, depending on the characteristics of the uniformity of the surface of the thin film when the device is driven.
- the deposition method is the mainstream in the formation of the OLED device, a situation that requires a material that can withstand a long time, that is, a material having a strong heat resistance characteristics.
- the first method is to increase the manufacturing efficiency by simplifying the device structure by using a material having a function of a hole injection layer and a hole transport layer at the same time.
- a material having a function of a hole injection layer and a hole transport layer As the stack thickness increases, such a structure must have a high hole movement property and a high deposition rate, that is, high heat resistance, is required to increase manufacturing time, that is, manufacturing efficiency.
- Fluorene structure on the other hand, has a major problem of rapid thermal mobility but serious thermal stability. The reason is explained in the following mechanism.
- the present invention provides a method for evaluating thermal stability using various fluorene derivatives as shown in the following table.
- the heat resistance measurement method or the evaluation method according to an embodiment of the present invention is for thermal stability evaluation, measuring the initial purity of the compound or derivative, leaving the compound or derivative for a time longer than the reference time at a temperature above the reference temperature, leaving And then measuring the purity of the compound or derivative and measuring the decrease between the area of the particular peak observed after the initial purity measurement and the area of the particular peak observed after the purity measurement after the neglect.
- the heat resistance measurement method or the evaluation method according to an embodiment of the present invention is for thermal stability evaluation, the step of measuring the initial purity of the fluorene derivative by HPLC (High Performance Liquid Chromatography), the time of more than the reference time at a temperature above the reference temperature Leaving the fluorene derivative during the step, measuring the purity of the fluorene derivative after standing by HPLC and the area of a specific peak observed after the initial purity measurement, and the specific particle observed after the purity measurement after the standing Measuring the reduction between the areas of the peaks.
- HPLC High Performance Liquid Chromatography
- the leaving temperature and the leaving time may be 350 °C and 12 hours.
- thermosafety measurement or evaluation method is not only the fluorene compound described above, but also the compounds described with reference to Chemical Formulas 1 to 4 and Tables 1 to 4 described below, and compounds not shown herein. Can be used comprehensively.
- the compound of the present invention may be an arylamine compound having a modification rate of less than 9% as a compound having a late purity of 90% or more in the thermal stability evaluation of the arylamine compound including the fluorene derivative.
- fluorene for increasing hole mobility may have a structure of F-6 to F-7 without hydrogen in adjacent carbons of the linking group.
- F-6 to F-7 without hydrogen in adjacent carbons of the linking group.
- Korean Patent 10-2010-0106626 introduces asymmetric diphenyl diamine.
- all of the fluorene structures exemplified in the asymmetric structure shown in the above patents have been confirmed that it is difficult to actually use in the organic electroluminescent device due to the poor heat resistance test results of the heat resistance evaluation method according to an embodiment of the present invention.
- the present invention provides a biphenyl diamine structure and a ring-linking group of fluorenes such as F-6 and F-7 having a high heat resistance structure according to a heat resistance evaluation method according to an embodiment of the present invention in order to secure high hole mobility.
- Invented is a compound of the structure as shown in formula (1) to formula (4) without hydrogen in the adjacent carbon.
- the inventors completed the invention with remarkable hole mobility, high heat resistance, low driving voltage and high lifespan.
- the present invention may provide a compound represented by one of the following Chemical Formulas 1 to 4 or at least one of the following Chemical Formulas 1 to 4.
- R 1 , R 2 , R 3 are each independently
- substituents in Chemical Formulas 1 to 4 may be substituted or unsubstituted even if not mentioned above, so that the substituents may be substituted with other substituents or substituents.
- R 1 and R 2 may combine with each other to form a substituted or unsubstituted saturated or unsaturated ring or ring, for example, an aliphatic, aromatic, or heteroaromatic monocyclic or polycyclic ring.
- Formula 4 may include two or more formulas by combining the same formula or different formulas.
- including two or more structures of the formula means that the compounds having the structure of the formula are present in a directly connected structure without a linking group.
- alkanes having a divalent or more linking group comprising two or more of the structure of the formula, alkanes having a divalent or more linking group, a cycloalkane having a bivalent or more linking group; Aryl compounds having a divalent or higher linking group; A pentagonal or hexagonal heteroaryl compound containing at least one nitrogen, sulfur, or oxygen atom and having a bivalent or more linking group; It means that two or more structures of Formula 1 may be linked to an oxygen atom, a sulfur atom, a substituted or unsubstituted nitrogen atom, or a substituted or unsubstituted person atom. Even in such a case, the same formula or different formulas in Formula 1, Formula 2, Formula 3, and Formula 4 may be combined to include two or more of the above formula structures. I think it was there, so I added it. Please check the contents.)
- the heterocyclic group is a heterocyclic group containing O, N or S as a hetero atom, and the carbon number is not particularly limited, but is preferably 2-60 carbon atoms.
- the heterocyclic group include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, triazine group, acridil group, pyridazine group , Quinolinyl group, isoquinoline group, indole group, carbazole group, benzoxazole group, benzimidazole group, benzthiazole group, benzcarbazole group, benzthiophene group, dibenzothiophene group, benzfuranyl group, dibenzofura Although there exist a nil group etc., it is not limited to these.
- the compound having the structural formula may be used in a solution process.
- the compound may form an organic material layer of an organic electric device, which will be described later, by a soluble process.
- the organic material layer may be formed by using various polymer materials, rather than a solution process or a solvent process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, or thermal transfer. It can be produced in fewer layers by the method.
- R 1 , R 2 , R 3 may be each independently one or more selected from the group consisting of the following, but is not limited thereto.
- the compound represented by Formula 1 may be specifically represented by one of the compounds as shown in Table 1 below, but is not limited thereto.
- Table 1 Compound 1-1-1-1 is R One , R 2 , R 3 Is A-1 (phenyl) and compound 1-1-1-2 is R One , R 2 Is A-1 (phenyl) and R 3 Is A-2 (naphthyl group) and compound 1-2-4-8 is R One Is A-2 and R 2 Is A-4 and R 3 May be A-8.
- R in compounds One , R 2 , R 3 are each independently hydrogen, halogen, amino, nitrile, nitro, C One ⁇ C 20 Alkyl group, C One ⁇ C 20 Alkoxy group, C One ⁇ C 20 Alkylamine groups, C One ⁇ C 20 Alkylthiophene groups, C 6 ⁇ C 20 Aryl thiophene group, C 2 ⁇ C 20 Alkenyl, C 2 ⁇ C 20 Alkynyl, C 3 ⁇ C 20 Cycloalkyl group of C, substituted with deuterium 6 ⁇ C 20 Aryl group, C 6 ⁇ C 20 Aryl group, C 8 ⁇ C 20 Aryl alkenyl group, silane group, boron group, germanium group, C 5 ⁇ C 20 It may be substituted with one or more than one selected from the group consisting of a heterocyclic group of.
- the compound represented by Chemical Formula 2 may be specifically represented by one of the compounds as shown in Table 2 below, but is not limited thereto.
- R 1 , R 2 , R 3 are each independently hydrogen, halogen, amino group, nitrile group, nitro group, C 1 ⁇ C 20 alkyl group, C 1 ⁇ C 20 alkoxy group, C as described above 1 ⁇ C 20 alkyl amine group, C 1 ⁇ C 20 alkyl thiophene group, C 6 ⁇ C 20 aryl thiophene group, C 2 ⁇ C 20 alkenyl group, C 2 ⁇ C 20 alkynyl group, C of 3 to C 20 cycloalkyl group, C 6 to C 20 aryl group substituted with deuterium, C 6 to C 20 aryl group, C 8 to C 20 aryl alkenyl group, silane group, boron group, germanium group, C It may be substituted with one or more than one selected from the group consisting of 5 ⁇ C 20 heterocyclic group.
- the compound represented by Formula 3 may be specifically represented by one of the compounds as shown in Table 3 below, but is not limited thereto.
- R 1 , R 2 , R 3 are each independently hydrogen, halogen, amino group, nitrile group, nitro group, C 1 ⁇ C 20 alkyl group, C 1 ⁇ C 20 alkoxy group, C as described above 1 ⁇ C 20 alkyl amine group, C 1 ⁇ C 20 alkyl thiophene group, C 6 ⁇ C 20 aryl thiophene group, C 2 ⁇ C 20 alkenyl group, C 2 ⁇ C 20 alkynyl group, C of 3 to C 20 cycloalkyl group, C 6 to C 20 aryl group substituted with deuterium, C 6 to C 20 aryl group, C 8 to C 20 aryl alkenyl group, silane group, boron group, germanium group, C It may be substituted with one or more than one selected from the group consisting of 5 ⁇ C 20 heterocyclic group.
- the compound represented by Chemical Formula 4 may be specifically represented by one of the compounds as shown in Table 4 below, but is not limited thereto.
- R 1 , R 2 , R 3 are each independently hydrogen, halogen, amino group, nitrile group, nitro group, C 1 ⁇ C 20 alkyl group, C 1 ⁇ C 20 alkoxy group, C as described above 1 ⁇ C 20 alkyl amine group, C 1 ⁇ C 20 alkyl thiophene group, C 6 ⁇ C 20 aryl thiophene group, C 2 ⁇ C 20 alkenyl group, C 2 ⁇ C 20 alkynyl group, C of 3 to C 20 cycloalkyl group, C 6 to C 20 aryl group substituted with deuterium, C 6 to C 20 aryl group, C 8 to C 20 aryl alkenyl group, silane group, boron group, germanium group, C It may be substituted with one or more than one selected from the group consisting of 5 ⁇ C 20 heterocyclic group.
- substituents in Tables 1 to 4 may be substituted or unsubstituted again even if not mentioned above, so that the substituents may be substituted with other substituents or substituents.
- Examples of the organic electroluminescent device in which the compounds described with reference to Chemical Formulas 1 to 4 and Tables 1 to 4 may be used include, for example, an organic light emitting diode (OLED), an organic solar cell, an organic photoconductor (OPC) drum, and an organic transistor (organic). TFT).
- OLED organic light emitting diode
- OPC organic photoconductor
- TFT organic transistor
- the present invention is not limited thereto, and the present invention is not limited thereto.
- Compounds can be applied.
- Another embodiment of the present invention is an organic electric device comprising a first electrode, a second electrode and an organic material layer disposed between these electrodes, wherein at least one layer of the organic material layer is a compound of formula 1 to 4 and Tables 1 to 4 It provides an organic electroluminescent device comprising.
- the compound according to the present invention can be used for various purposes in the organic light emitting electronic device according to the type and nature of the substituent.
- the compounds of the present invention can act as various layers other than the host of the phosphorescent or fluorescent light emitting layer because they are freely controlled by the core and the substituents.
- the organic light emitting diode may be an organic light emitting diode having a reverse structure in which a cathode, one or more organic material layers, and an anode are sequentially stacked on a substrate.
- the organic material layer of the organic light emitting device may include a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection and / or transport layer.
- the organic material layer of the organic light emitting diode device may include a light emitting layer, and the light emitting layer may include a compound represented by one of Chemical Formulas 1 to 4.
- the compound represented by one of Formulas 1 to 4 may serve as a host of the light emitting layer.
- the organic material layer of the organic light emitting device may include an electron transport and / or injection layer, the layer may include a compound represented by one of the formulas (1) to (4).
- the organic material layer of the organic light emitting diode may include a layer for simultaneously transporting holes and emitting light, and the layer may include a compound represented by one of Chemical Formulas 1 to 4.
- the organic material layer of the organic light emitting device may include a layer for simultaneously emitting light and electron transport, the layer may include a compound represented by one of the formulas (1) to (4).
- the organic material layer including the compound represented by one of Formulas 1 to 4 according to the present invention may include a compound represented by one of Formulas 1 to 4 as a host, and may include other organic compounds, metals, or metal compounds as dopants. .
- the organic electroluminescent device may include a hole injection layer or a hole transport layer including a compound including an arylamino group, a carbazole group, or a benzcarbazole group in addition to an organic material layer including a compound represented by one of Formulas 1 to 4 above. Can be.
- the organic electronic device of the present invention may be manufactured by a conventional method and material for manufacturing an organic electronic device, except that at least one organic material layer is formed using the above-described compounds.
- 1 to 6 show examples of the organic light emitting display device to which the compound of the present invention can be applied.
- the organic light emitting device according to another embodiment of the present invention, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer And one or more layers of the organic material layer including the electron injection layer to include the compounds of Formulas 1 to 4 and Tables 1 to 4, using conventional manufacturing methods and materials in the art. It can be produced in a structure known to.
- FIGS. 1 to 6 The structure of the organic light emitting display device according to another embodiment of the present invention is illustrated in FIGS. 1 to 6, but is not limited thereto.
- reference numeral 101 denotes a substrate, 102 an anode, 103 a hole injection layer (HIL), 104 a hole transport layer (HTL), 105 a light emitting layer (EML), 106 an electron injection layer (EIL), 107 an electron transport layer ( ETL), 108 represents a negative electrode.
- the organic light emitting diode further includes a hole blocking layer (HBL) that blocks hole movement, an electron blocking layer (EBL) that blocks electrons from moving, a light emitting auxiliary layer that helps or assists light emission, and a protective layer. It may be located.
- the protective layer may be formed to protect the organic material layer or the cathode at the uppermost layer.
- the compounds described with reference to Chemical Formulas 1 to 4 and Tables 1 to 4 may be included in one or more of an organic material layer including a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer.
- the compound described with reference to Formulas 1 to 4 and Tables 1 to 4 is one of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, a light emitting auxiliary layer and a protective layer It may be used instead of the above or may be used by forming a layer with them.
- the organic layer may be used not only in one layer but also in two or more layers.
- it can be used as a hole injection material, a hole transport material, an electron injection material, an electron transport material, a light emitting material and a passivation (kepping) material according to the compounds described with reference to Formulas 1 to 4 and Tables 1 to 4, in particular alone It can be used as a host or a dopant in the light emitting material and the host / dopant, it can be used as a hole injection, hole transport layer.
- the organic light emitting device is a metal having a metal or conductivity on a substrate by using a physical vapor deposition (PVD) method such as sputtering or e-beam evaporation
- PVD physical vapor deposition
- An oxide or an alloy thereof is deposited to form an anode, an organic material layer including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is formed thereon, and then a material that can be used as a cathode is deposited thereon.
- PVD physical vapor deposition
- an organic electronic device may be fabricated by sequentially depositing a cathode material, an organic material layer, and an anode material on a substrate.
- the organic material layer may have a multilayer structure including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, but is not limited thereto and may have a single layer structure.
- the organic layer may be formed using a variety of polymer materials, but not by a deposition process or a solvent process, such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, or thermal transfer. It can be made with a small number of layers.
- the organic light emitting device according to another embodiment of the present invention may be used in a solution process such as spin coating or ink jet process.
- the substrate is a support of the organic light emitting device, and a silicon wafer, quartz or glass plate, metal plate, plastic film or sheet, or the like can be used.
- An anode is positioned over the substrate. This anode injects holes into the hole injection layer located thereon.
- the anode material a material having a large work function is usually preferred to facilitate hole injection into the organic material layer.
- the positive electrode material that can be used in the present invention include metals such as vanadium, chromium, copper, zinc, gold or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); Combinations of metals and oxides such as ZnO: Al or SnO 2 : Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline, and the like, but are not limited thereto.
- the hole injection layer is located on the anode.
- the conditions required for the material of the hole injection layer are high hole injection efficiency from the anode, it should be able to transport the injected holes efficiently. This requires a small ionization potential, high transparency to visible light, and excellent hole stability.
- the hole injection material is a material capable of well injecting holes from the anode at low voltage, and the highest occupied molecular orbital (HOMO) of the hole injection material is preferably between the work function of the positive electrode material and the HOMO of the surrounding organic material layer.
- hole injection materials include metal porphyrine, oligothiophene, arylamine-based organics, hexanitrile hexaazatriphenylene, quinacridone-based organics, perylene-based organics, Anthraquinone, polyaniline and polythiophene-based conductive polymers, but are not limited thereto.
- the hole transport layer is positioned on the hole injection layer.
- the hole transport layer receives holes from the hole injection layer and transports the holes to the organic light emitting layer located thereon, and serves to prevent high hole mobility, hole stability, and electrons.
- Tg glass transition temperature
- Materials satisfying these conditions include NPD (or NPB), spiro-arylamine compounds, perylene-arylamine compounds, azacycloheptatriene compounds, bis (diphenylvinylphenyl) anthracene and silicon germanium oxide.
- NPD or NPB
- spiro-arylamine compounds perylene-arylamine compounds
- azacycloheptatriene compounds bis (diphenylvinylphenyl) anthracene
- silicon germanium oxide silicon germanium oxide
- the organic light emitting layer is positioned on the hole transport layer.
- the organic light emitting layer is a layer for emitting light by recombination of holes and electrons injected from the anode and the cathode, respectively, and is made of a material having high quantum efficiency.
- the light emitting material is a material capable of emitting light in the visible region by transporting and combining holes and electrons from the hole transport layer and the electron transport layer, respectively, and a material having good quantum efficiency with respect to fluorescence or phosphorescence is preferable.
- Substances or compounds that satisfy these conditions include Alq3 for green, Balq (8-hydroxyquinoline beryllium salt) for blue, DPVBi (4,4'-bis (2,2-diphenylethenyl) -1,1'- biphenyl) series, Spiro material, Spiro-DPVBi (Spiro-4,4'-bis (2,2-diphenylethenyl) -1,1'-biphenyl), LiPBO (2- (2-benzoxazoyl) -phenol lithium salt), bis (diphenylvinylphenylvinyl) benzene, aluminum-quinoline metal complex, metal complexes of imidazole, thiazole and oxazole, and the like, perylene, and BczVBi (3,3 ') to increase blue light emission efficiency.
- an organic light emitting layer is formed of a polymer of polyphenylene vinylene (PPV) or a polymer such as poly fluorene.
- PPV polyphenylene vinylene
- a polymer such as poly fluorene can be used for
- the electron transport layer is positioned on the organic light emitting layer.
- Such an electron transport layer requires a material having high electron injection efficiency and efficiently transporting injected electrons from a cathode positioned thereon. To this end, it must be made of a material having high electron affinity and electron transfer speed and excellent stability to electrons. Examples of the electron transport material that satisfies such conditions include Al complexes of 8-hydroxyquinoline; Complexes including Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes and the like, but are not limited thereto.
- the electron injection layer is stacked on the electron transport layer.
- the electron injection layer is a metal complex compound such as Balq, Alq3, Be (bq) 2, Zn (BTZ) 2, Zn (phq) 2, PBD, spiro-PBD, TPBI, Tf-6P, aromatic compound with imidazole ring, It can be produced using a low molecular weight material containing boron compounds and the like.
- the electron injection layer may be formed in a thickness range of 100 ⁇ 300 ⁇ .
- the cathode is positioned on the electron injection layer. This cathode serves to inject electrons.
- the material used as the cathode it is possible to use the material used for the anode, and a metal having a low work function is more preferable for efficient electron injection.
- a suitable metal such as tin, magnesium, indium, calcium, sodium, lithium, aluminum, silver, or a suitable alloy thereof can be used.
- electrodes having a two-layer structure such as lithium fluoride and aluminum, lithium oxide and aluminum, strontium oxide and aluminum having a thickness of 100 ⁇ m or less may also be used.
- the organic light emitting device may be a top emission type, a bottom emission type or a double-sided emission type according to the material used.
- the present invention includes a display device including the organic electric element described above, and a terminal including a control unit for driving the display device.
- This terminal means a current or future wired or wireless communication terminal.
- the terminal according to the present invention described above may be a mobile communication terminal such as a mobile phone, and includes all terminals such as a PDA, an electronic dictionary, a PMP, a remote control, a navigation device, a game machine, various TVs, various computers, and the like.
- the compounds were synthesized according to the synthesis method described above, and the examples in which the compounds were applied to an organic material layer of an organic electroluminescent device, for example, an organic electroluminescent device, were compared with those of commonly used compounds.
- intermediate 1 (Sub1) and intermediate 2 (Sub2) are reacted with dibromo diphenyl in order, and then the intermediate 1 (Sub 1) and the intermediate (Sub2) are subjected to a linkage reaction to generally produce a compound of Formula 1 Can be synthesized.
- the compound which has the intrinsic property of the introduced substituent can be synthesize
- R 1 , R 2 , and R 3 are each independently hydrogen, halogen, or amino group.
- A-3N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours.
- A-4N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed in toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added and then stirred at reflux for 24 hours.
- A-5N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed in toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-8N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed in toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-8N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-1N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-8N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-1N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-1N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- Amino compound (A-2N, amino compound) (200 mmol) and bromo compound ( A-3B , 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t- Bu) 3 (1.4 g, 7 mol) and NaOtBu (29.6 g, 300 mmol) were added and then stirred at reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-1N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-8N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- Amino compound (A-2N, amino compound) (200 mmol) and bromo compound ( A-4B , 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t- Bu) 3 (1.4 g, 7 mol) and NaOtBu (29.6 g, 300 mmol) were added and then stirred at reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-1N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-8N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- Amino compound (A-3N, amino compound) (200 mmol) and bromo compound ( A-3B , 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t- Bu) 3 (1.4 g, 7 mol) and NaOtBu (29.6 g, 300 mmol) were added and then stirred at reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-1N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
- A-6N (200 mmol) and bromodiphenylfluorene (DPF-Br) (79.4 g 200 mmol) were mixed with toluene (1000 mL), followed by Pd (dba) 2 (6 g, 14 mmol), P (t-Bu) 3 (1.4 g, 7 mol), NaOtBu (29.6 g, 300 mmol) were added followed by stirring under reflux for 24 hours. After the reaction was completed, the mixture was extracted with ether and water, the organic layer was dried over MgSO 4 and concentrated, and the resulting organic substance was purified by silicagel column and recrystallized to obtain a product.
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Abstract
Description
Claims (11)
- 다음의 화학식들 중 하나로 표시되는 화합물.상기 R1, R2, R3은 각각 독립적으로수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20의 알킬티오펜기, C6~C20의 아릴 티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, 중수소로 치환된 C6~C20의 아릴기, C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 하나 이상의 기로 치환 또는 비치환된 C6~C20의 아릴기; 및수소, 할로겐, 아미노기, 니트릴기, 니트로기, C1~C20의 알킬기, C1~C20의 알콕시기, C1~C20의 알킬아민기, C1~C20의 알킬티오펜기, C6~C20의 아릴 티오펜기, C2~C20의 알케닐기, C2~C20의 알키닐기, C3~C20의 시클로알킬기, 중수소로 치환된 C6~C20의 아릴기, C6~C20의 아릴기, C8~C20의 아릴알케닐기, 실란기, 붕소기, 게르마늄기, C5~C20의 헤테로고리기로 이루어진 군으로부터 선택되는 하나 이상의 기로 치환 또는 비치환된 C6~C20의 아릴 티오펜기이다.
- 제1항에 있어서,상기 R1 과 상기 R2는 이웃한 치환기끼리 서로 결합하여 포화 또는 불포화 고리를 형성하는 것을 특징으로 하는 화합물.
- 제1항 내지 제4항 중 어느 한 항의 화합물을 포함하는 1층 이상의 유기물층을 포함하는 유기전기소자.
- 제5항에 있어서,상기 유기전기소자는 제1 전극, 상기 1층 이상의 유기물층 및 제2 전극을 순차적으로 적층된 형태로 포함하는 유기전기발광소자인 것을 특징으로 하는 유기전기소자.
- 제5항에 있어서,상기 화합물을 용액 공정(soluble process)에 의해 상기 유기물층을 형성하는 것을 특징으로 하는 유기전기소자.
- 제5항에 있어서,상기 유기물층은 정공주입층, 정공수송층, 발광층, 전자수송층 및 전자주입층 중 어느 하나인 것을 특징으로 하는 유기전기소자.
- 제8항에 있어서,상기 발광층은 상기 화합물을 발광호스트 물질로 포함하거나 상기 정공주입층 또는 정공수층 중 하나 또는 둘다는 상기 화합물을 포함하는 것을 특징으로 하는 유기전기소자.
- 제9항의 유기전기소자를 포함하는 디스플레이장치와;상기 디스플레이장치를 구동하는 제어부를 포함하는 전자장치.
- 제10항에 있어서,상기 유기전기소자는 유기전기발광소자(OLED), 유기태양전지, 유기감광체(OPC) 드럼, 유기트랜지스트(유기 TFT) 중 하나인 것을 특징으로 하는 전자장치.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/982,333 US20130334518A1 (en) | 2011-02-16 | 2012-02-02 | Compound and organic electrical element using same, and electronic device and heat-resistance measuring method therewith |
JP2013552463A JP2014506881A (ja) | 2011-02-16 | 2012-02-02 | 化合物及びこれを利用した有機電気素子、その電子装置、耐熱性測定法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2011-0013876 | 2011-02-16 | ||
KR1020110013876A KR101053466B1 (ko) | 2011-02-16 | 2011-02-16 | 화합물 및 이를 이용한 유기전기소자, 그 전자장치, 내열성 측정법 |
Publications (3)
Publication Number | Publication Date |
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WO2012111927A2 WO2012111927A2 (ko) | 2012-08-23 |
WO2012111927A3 WO2012111927A3 (ko) | 2012-10-11 |
WO2012111927A9 true WO2012111927A9 (ko) | 2012-12-13 |
Family
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PCT/KR2012/000808 WO2012111927A2 (ko) | 2011-02-16 | 2012-02-02 | 화합물 및 이를 이용한 유기전기소자, 그 전자장치, 내열성 측정법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130334518A1 (ko) |
JP (1) | JP2014506881A (ko) |
KR (1) | KR101053466B1 (ko) |
TW (1) | TWI600637B (ko) |
WO (1) | WO2012111927A2 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101111413B1 (ko) * | 2011-06-29 | 2012-02-15 | 덕산하이메탈(주) | 다이아릴아민 유도체를 이용하는 유기전기소자, 유기전기소자용 신규 화합물 및 조성물 |
KR102163320B1 (ko) * | 2014-04-10 | 2020-10-08 | 덕산네오룩스 주식회사 | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 |
KR102287012B1 (ko) | 2014-05-28 | 2021-08-09 | 덕산네오룩스 주식회사 | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 |
KR102277659B1 (ko) | 2014-07-03 | 2021-07-15 | 덕산네오룩스 주식회사 | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 |
KR102242791B1 (ko) | 2014-08-29 | 2021-04-21 | 덕산네오룩스 주식회사 | 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 |
US10032989B2 (en) | 2015-02-16 | 2018-07-24 | Merck Patent Gmbh | Spirobifluorene derivative-based materials for electronic devices |
KR101745491B1 (ko) | 2015-03-12 | 2017-06-13 | 덕산네오룩스 주식회사 | 유기발광소자 및 유기발광 표시장치 |
KR20180090931A (ko) | 2017-02-03 | 2018-08-14 | 삼성디스플레이 주식회사 | 아민계 화합물 및 이를 포함한 유기 발광 소자 |
KR102048920B1 (ko) | 2017-08-18 | 2019-11-27 | 삼성디스플레이 주식회사 | 아민계 화합물 및 이를 포함한 유기 발광 소자 |
KR102547688B1 (ko) * | 2018-04-24 | 2023-06-27 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이의 제조 방법 |
CN109004102B (zh) * | 2018-06-11 | 2020-10-27 | 吉林奥来德光电材料股份有限公司 | 一种化合物的应用 |
KR20190140549A (ko) | 2018-06-11 | 2019-12-20 | 삼성디스플레이 주식회사 | 아민 화합물 및 이를 포함한 유기 발광 소자 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3877419B2 (ja) | 1998-02-03 | 2007-02-07 | 三井化学株式会社 | 有機電界発光素子 |
JP3884557B2 (ja) | 1998-04-01 | 2007-02-21 | 三井化学株式会社 | 有機電界発光素子 |
JP4801429B2 (ja) * | 2004-12-06 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光素子、及び該発光素子を有する発光装置 |
EP2371810A1 (en) * | 2005-01-05 | 2011-10-05 | Idemitsu Kosan Co., Ltd. | Aromatic amine derivative and organic electroluminescent device using same |
US20070003785A1 (en) * | 2005-06-30 | 2007-01-04 | Eastman Kodak Company | Electroluminescent devices containing benzidine derivatives |
KR101166809B1 (ko) * | 2006-04-13 | 2012-07-26 | 토소가부시키가이샤 | 벤조플루오렌 화합물 및 그 용도 |
JP5145717B2 (ja) * | 2006-04-13 | 2013-02-20 | 東ソー株式会社 | ベンゾフルオレン化合物及びその用途 |
WO2008146838A1 (ja) * | 2007-05-30 | 2008-12-04 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
KR101453873B1 (ko) * | 2007-10-08 | 2014-10-24 | 삼성디스플레이 주식회사 | 사이클로펜타페난트렌계 화합물 및 이를 이용한 유기 발광소자 |
KR20100003632A (ko) * | 2008-07-01 | 2010-01-11 | 덕산하이메탈(주) | 신규의 바이페닐 유도체 및 이를 포함하는 유기 전계발광소자 |
-
2011
- 2011-02-16 KR KR1020110013876A patent/KR101053466B1/ko active IP Right Grant
-
2012
- 2012-02-02 US US13/982,333 patent/US20130334518A1/en not_active Abandoned
- 2012-02-02 WO PCT/KR2012/000808 patent/WO2012111927A2/ko active Application Filing
- 2012-02-02 JP JP2013552463A patent/JP2014506881A/ja active Pending
- 2012-02-14 TW TW101104788A patent/TWI600637B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201235337A (en) | 2012-09-01 |
WO2012111927A2 (ko) | 2012-08-23 |
JP2014506881A (ja) | 2014-03-20 |
TWI600637B (zh) | 2017-10-01 |
US20130334518A1 (en) | 2013-12-19 |
WO2012111927A3 (ko) | 2012-10-11 |
KR101053466B1 (ko) | 2011-08-03 |
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