WO2012086578A1 - Fe-Pt系強磁性材スパッタリングターゲット及びその製造方法 - Google Patents
Fe-Pt系強磁性材スパッタリングターゲット及びその製造方法 Download PDFInfo
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- WO2012086578A1 WO2012086578A1 PCT/JP2011/079327 JP2011079327W WO2012086578A1 WO 2012086578 A1 WO2012086578 A1 WO 2012086578A1 JP 2011079327 W JP2011079327 W JP 2011079327W WO 2012086578 A1 WO2012086578 A1 WO 2012086578A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0021—Matrix based on noble metals, Cu or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
- C22C33/0257—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
- C22C33/0278—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/008—Ferrous alloys, e.g. steel alloys containing tin
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/16—Ferrous alloys, e.g. steel alloys containing copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/043—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by ball milling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
Definitions
- the present invention relates to a ferromagnetic sputtering target used for forming a magnetic thin film of a magnetic recording medium, particularly a magnetic recording layer of a hard disk adopting a perpendicular magnetic recording method, and an oxide that causes generation of particles during sputtering.
- the present invention relates to a Fe—Pt ferromagnetic sputtering target that can suppress abnormal discharge.
- a material based on Co, Fe, or Ni which is a ferromagnetic metal, is used as a magnetic thin film material for recording.
- a Co—Cr-based or Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component has been used for a recording layer of a hard disk employing an in-plane magnetic recording method.
- a hard disk recording layer employing a perpendicular magnetic recording system that has been put into practical use in recent years often uses a composite material composed of a Co—Cr—Pt-based ferromagnetic alloy mainly composed of Co and non-magnetic inorganic particles. It has been.
- a magnetic thin film of a magnetic recording medium such as a hard disk is often produced by sputtering a ferromagnetic material sputtering target containing the above material as a component because of high productivity.
- the recording density of the magnetic recording medium is rapidly increasing year by year, it is believed to the future from the surface density of 100 Gbit / in 2 the current reaches 1 Tbit / in 2.
- the size of the recording bit becomes less than 10 nm.
- superparamagnetization due to thermal fluctuation is expected to be a problem, and currently used magnetic recording media,
- a material in which Pt is added to a Co—Cr based alloy to increase the magnetocrystalline anisotropy or a medium in which B is further added to weaken the magnetic coupling between the magnetic grains is not sufficient. Is done. This is because particles having a size of 10 nm or less and stably acting as ferromagnetism must have higher crystal magnetic anisotropy.
- FePt phase having an L1 0 structure is attracting attention as a material for an ultra-high density recording medium.
- the L1 0 FePt phase is excellent in corrosion resistance and oxidation resistance, it is expected to be a material suitable for application as a recording medium.
- the FePt phase rule to 1573K - has an irregular transformation point, typically having an L1 0 structure by rapid ordering reaction be quenched alloy from the hot.
- a vapor phase quenching method such as sputtering or vapor deposition
- a solid phase is formed without passing through the regular transformation point of the solid phase, and therefore the FePt phase in an unordered fcc state. There is a problem that can only be obtained.
- the magnetic recording layer is composed of a magnetic phase such as an Fe—Pt alloy and a nonmagnetic phase separating the magnetic phase, and a metal oxide is effective as one of the materials of the nonmagnetic phase.
- a magnetic recording layer is often formed by a sputtering film forming method.
- the metal oxide is not prepared at the time of sputtering.
- non-magnetic material particle-dispersed ferromagnetic sputtering targets such as Co—Cr—Pt—oxide and Fe—Pt—oxide contain oxides such as SiO 2 , Cr 2 O 3 , TiO 2, etc. Is an insulator, causing abnormal discharge. Due to this abnormal discharge, generation of particles during sputtering becomes a problem.
- an object of the present invention is to suppress abnormal discharge of oxides and reduce the generation of particles during sputtering caused by abnormal discharge.
- the probability of abnormal discharge has been reduced by reducing the particle size of the oxide, but with the increase in recording density of magnetic recording media, the allowable particle level has become stricter, so it has been further improved
- the present inventors have conducted intensive research. As a result, by adjusting the composition and structure of the target, abnormal discharge due to oxide during sputtering does not occur, and generation of particles is small. We found that a target was obtained.
- the present invention 1) A sputtering target having a composition in which Pt is 5 to 50 mol%, SiO 2 is 5 to 15 mol%, Sn is 0.05 to 0.60 mol%, and the balance is Fe, and is dispersed in the metal substrate (A).
- the present invention provides a ferromagnetic sputtering target characterized in that the Sn is contained in SiO 2 particles (B).
- the present invention also provides: 2) In addition to the SiO 2 , at least one kind of oxidation selected from TiO 2 , Ti 2 O 3 , Cr 2 O 3 , Ta 2 O 5 , Ti 5 O 9 , B 2 O 3 , CoO, and Co 3 O 4 5-15 mol% of the product, these oxides are dispersed in the metal substrate (A), and Sn is contained in these oxides.
- a ferromagnetic sputtering target is provided.
- the present invention provides 3) The ferromagnetic sputtering target according to any one of 1) to 2) above, which contains 0.5 to 10 mol% of one or more elements selected from Ru, B, and Cu. To do. 4) The ferromagnetic sputtering target according to any one of 1) to 3) above, wherein the relative density is 97% or more.
- the present invention provides 5) SiO 2 powder and SnO 2 powder or Sn powder so that the composition is 5 to 50 mol% Pt, 5 to 15 mol% SiO 2 , 0.05 to 0.60 mol% Sn, and the balance is Fe.
- this mixed powder is further mixed with Fe powder, Pt powder, or Fe—Pt alloy powder prepared in the same manner so as to have the above composition, and these mixed powders are hot pressed to obtain a metal.
- a method of manufacturing a magnetic material sputtering target is provided.
- the present invention provides 6) In addition to the SiO 2 , at least one kind of oxidation selected from TiO 2 , Ti 2 O 3 , Cr 2 O 3 , Ta 2 O 5 , Ti 5 O 9 , B 2 O 3 , CoO, and Co 3 O 4 5 to 15 mol% of the product is added, and these oxides are dispersed in the metal substrate (A), and a sintered body having a structure containing Sn in these oxides is obtained.
- the manufacturing method of the ferromagnetic material sputtering target of said 4) is provided.
- the present invention provides 7) The ferromagnetic material sputtering according to any one of 4) to 5) above, wherein 0.5 to 10 mol% of one or more elements selected from Ru, B, and Cu are added and sintered.
- a method for manufacturing a target is provided.
- the thus prepared non-magnetic material particle dispersion type ferromagnetic sputtering target of the present invention does not cause abnormal discharge due to oxide during sputtering, and a target with less generation of particles can be obtained. Furthermore, it has an excellent effect of suppressing the abnormal discharge of the oxide, reducing the generation of particles during sputtering caused by the abnormal discharge, and obtaining the cost improvement effect by improving the yield.
- the main components constituting the ferromagnetic sputtering target of the present invention are from a metal having a composition in which Pt is 5 to 50 mol%, SiO 2 is 5 to 15 mol%, Sn is 0.05 to 0.60 mol%, and the balance is Fe. Become. These Pt amount and Fe amount are effective amounts for retaining the characteristics of the ferromagnetic material sputtering target, that is, the ferromagnetic material thin film.
- the above are components required as a magnetic recording medium, and the blending ratio can be variously adjusted within the above range, but any of them can maintain the characteristics as an effective magnetic recording medium.
- the ferromagnetic Fe-Pt-based, the addition of SiO 2 is SiO 2 in the sintered sputtering target is present as particles, since SiO 2 is an insulator, present alone If you do, it will cause arcing. Therefore, in the present invention, by introducing a Sn having electrical conductivity SiO 2, lowering the electrical resistance, it is to suppress abnormal discharge due to oxides.
- the reason why the amount of SiO 2 is set to 5 mol% or more and 15 mol% or less is that if the addition amount is out of the range, characteristics as a granular type magnetic recording medium may be lost.
- Sn may be effective alone or in combination.
- Single addition means addition as SnO 2 powder or Sn powder
- composite addition means addition as SiO 2 powder and SnO 2 powder or mixed powder of SiO 2 powder and Sn powder.
- the effective addition amount is in the range of 0.05 to 0.60 mol%. If it is less than the lower limit, there is no effect of imparting conductivity to SiO 2 , and if it exceeds the upper limit, the magnetic properties of the sputtered film may be affected, and desired properties may not be obtained.
- one or more oxides selected from TiO 2 , Ti 2 O 3 , Cr 2 O 3 , Ta 2 O 5 , Ti 5 O 9 , B 2 O 3 , CoO, and Co 3 O 4 may be used. 5 to 15 mol% can be contained. These oxides are dispersed in the metal substrate (A), and Sn can also be contained in these oxides as in the case of the SiO 2 . These oxides can be arbitrarily selected and added according to the type of ferromagnetic film required. The said addition amount is an effective amount for exhibiting the effect of addition.
- 0.5 to 10 mol% of one or more elements selected from Ru, B, and Cu can be added. These are elements added as necessary in order to improve the characteristics as a magnetic recording medium.
- the said addition amount is an effective amount for exhibiting the effect of addition.
- the ferromagnetic material sputtering target of the present invention desirably has a relative density of 97% or more.
- a higher density target can reduce the amount of particles generated during sputtering.
- a relative density of 97% or more can be achieved.
- the relative density is a value obtained by dividing the actually measured density of the target by the calculated density (also called the theoretical density).
- the calculation density is a density when it is assumed that the constituent components of the target are mixed without diffusing or reacting with each other, and is calculated by the following equation.
- Calculated density Sigma ⁇ (Molecular weight of constituent component x Molar ratio of constituent component) / ⁇ (Molecular weight of constituent component x Molar ratio of constituent component / Document value density of constituent component)
- ⁇ means taking the sum for all the constituent components of the target.
- the target adjusted in this way does not cause arcing (abnormal discharge) due to oxide during sputtering, and a target with less generation of particles can be obtained. Furthermore, as described above, it is possible to impart conductivity to the SiO 2 particles by adding Sn, to prevent the occurrence of abnormal discharge, and to reduce the amount of particles that cause a decrease in yield. effective.
- the ferromagnetic material sputtering target of the present invention can be produced by powder metallurgy.
- a powder of each metal element and, if necessary, a powder of an additional metal element are prepared. These powders desirably have a maximum particle size of 20 ⁇ m or less. Further, alloy powders of these metals may be prepared instead of the powders of the respective metal elements, but in this case as well, it is desirable that the maximum particle size is 20 ⁇ m or less. On the other hand, if it is too small, there is a problem that oxidation is accelerated and the component composition does not fall within the range.
- these metal powder and alloy powder are weighed so as to have a desired composition, and mixed by pulverization using a known technique such as a ball mill.
- a known technique such as a ball mill.
- the mixer is preferably a planetary motion type mixer or a planetary motion type stirring mixer. Furthermore, considering the problem of oxidation during mixing, it is preferable to mix in an inert gas atmosphere.
- SiO 2 powder and SnO 2 powder or Sn powder are mixed so that the composition is Pt 5 to 50 mol%, SiO 2 5 to 15 mol%, Sn 0.05 to 0.60 mol%, and the balance Fe. After mixing and mixing in advance, it is effective to further mix this mixed powder with Fe powder and Pt powder similarly prepared so as to have the above composition.
- Fe—Pt alloy powder may be mixed.
- the ferromagnetic material sputtering target of the present invention can be produced by molding and sintering the powder thus obtained using a vacuum hot press apparatus and cutting it into a desired shape.
- the added Sn or SnO 2 is preferentially contained in the SiO 2 particles dispersed in the metal substrate in the sintered compact target, and the electric resistance of the SiO 2 particles is lowered.
- the electrical resistance after the addition can be 5.5 ⁇ 10 16 ⁇ ⁇ cm or less.
- Sn or SnO 2 is not added, the electric resistance exceeds 5.5 ⁇ 10 16 ⁇ ⁇ cm and acts as an insulating material, causing abnormal discharge.
- the present invention eliminates this phenomenon. The occurrence of arcing (abnormal discharge) has been significantly reduced.
- the molding / sintering is not limited to hot pressing, and a plasma discharge sintering method or a hot isostatic pressing method can also be used.
- the holding temperature at the time of sintering is preferably set to the lowest temperature in a temperature range where the target is sufficiently densified. Depending on the composition of the target, it is often in the temperature range of 900 to 1200 ° C.
- Example 1 In Example 1, as raw material powder, SiO 2 powder with an average particle diameter of 1 ⁇ m and SnO 2 powder with an average particle diameter of 1 ⁇ m were weighed in advance so as to be 95 wt% of SiO 2 powder and 5 wt% of SnO 2 powder. For 1 hour to prepare a SiO 2 —SnO 2 mixed powder. This mixed powder, a Pt powder having an average particle diameter of 3 ⁇ m, and an Fe powder having an average particle diameter of 3 ⁇ m are mixed with Fe powder so that the composition of the target is 50Fe-40Pt-10 (SiO 2 —SnO 2 ) (mol%). Weighing was performed at a weight ratio of 24.80 wt%, Pt powder 69.56 wt%, and SiO 2 —SnO 2 mixed powder 5.64 wt%.
- the Fe powder, Pt powder, and SiO 2 —SnO 2 mixed powder were sealed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed by rotating for 20 hours.
- This mixed powder was filled in a carbon mold and hot-pressed in a vacuum atmosphere under conditions of a temperature of 1100 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 7 mm.
- the number of particles generated in a steady state was 2.8.
- the relative density was 98.5%, and a high-density target exceeding 97% was obtained.
- Comparative Example 1 Pt powder having an average particle diameter of 3 ⁇ m, Fe powder having an average particle diameter of 3 ⁇ m, and SiO 2 powder having an average particle diameter of 1 ⁇ m were prepared as raw material powders. These powders were weighed at a weight ratio of Fe powder 24.94 wt%, Pt powder 69.69 wt% and SiO 2 powder 5.37 wt% so that the target composition would be 50Fe-40Pt-10SiO 2 (mol%).
- Example 2 As raw material powder, SiO 2 powder with an average particle diameter of 1 ⁇ m and SnO 2 powder with an average particle diameter of 1 ⁇ m were weighed in advance so as to be 95 wt% of SiO 2 powder and 5 wt% of SnO 2 powder, and placed in a ball mill. For 1 hour to prepare a SiO 2 —SnO 2 mixed powder.
- This mixed powder, a Pt powder having an average particle size of 3 ⁇ m, an Fe powder having an average particle size of 3 ⁇ m, a Cu powder having an average particle size of 5 ⁇ m, and a Cr 2 O 3 powder having an average particle size of 3 ⁇ m have a target composition of 75Fe-5Pt— 10Cu-5Cr 2 O 3 -5 ( SiO 2 -SnO 2) and such that (mol%), Fe powder 60.97wt%, Pt powder 14.20wt%, Cu powder 9.25wt%, Cr 2 O 3 powder Weighing was performed at a weight ratio of 11.06 wt% and SiO 2 —SnO 2 mixed powder 4.52 wt%.
- the Fe powder, Pt powder, Cu powder, Cr 2 O 3 powder and SiO 2 —SnO 2 mixed powder are enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated for 20 hours to be mixed. did.
- This mixed powder was filled in a carbon mold and hot-pressed in a vacuum atmosphere under conditions of a temperature of 1100 ° C., a holding time of 2 hours, and a pressure of 30 MPa to obtain a sintered body. Further, this was cut with a lathe to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 7 mm.
- Comparative Example 2 In Comparative Example 2, as a raw material powder, Pt powder with an average particle size of 3 ⁇ m, Fe powder with an average particle size of 3 ⁇ m, Cu powder with an average particle size of 5 ⁇ m, Cr 2 O 3 powder with an average particle size of 3 ⁇ m, and SiO with an average particle size of 1 ⁇ m Two powders were prepared. These powders so that the target composition is 75Fe-5Pt-10Cu-5Cr 2 O 3 -5SiO 2 (mol%), Fe powder 61.06wt%, Pt powder 14.22wt%, Cu powder 9.26wt%, Weighing was performed at a weight ratio of 11.08 wt% of Cr 2 O 3 powder and 4.38 wt% of SiO 2 powder. This component composition does not contain Sn.
- Example 2 an example in which Cu was further added was shown. However, if the amount was within a predetermined range, this did not cause generation of particles or a decrease in density. It has been confirmed that the characteristics as a magnetic recording medium can be further improved when one or more elements selected from Ru, B, and Cu are contained in an amount of 0.5 to 10 mol%. Although not described in detail, the Fe-Pt-C-oxide can also suppress abnormal discharge caused by the oxide by applying the means of the present invention, and has the effect of reducing particles. I have confirmed that.
- the present invention makes it possible to adjust the structure of the ferromagnetic material sputtering target and reduce the generation of particles without causing abnormal discharge due to oxides during sputtering. Therefore, when the target of the present invention is used, stable discharge can be obtained when sputtering with a magnetron sputtering apparatus. Furthermore, it has the excellent effect of suppressing the abnormal discharge of oxide, reducing the generation of particles during sputtering caused by the abnormal discharge, and obtaining the cost improvement effect by improving the yield. It is useful as a ferromagnetic sputtering target used for forming a thin film of a body, particularly a hard disk drive recording layer.
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Abstract
Description
また、近年実用化された垂直磁気記録方式を採用するハードディスクの記録層には、Coを主成分とするCo-Cr-Pt系の強磁性合金と非磁性の無機物粒子からなる複合材料が多く用いられている。そしてハードディスクなどの磁気記録媒体の磁性薄膜は、生産性の高さから、上記の材料を成分とする強磁性材スパッタリングターゲットをスパッタリングして作製されることが多い。
このFePt相は1573Kに規則-不規則変態点を持ち、通常合金を高温から焼き入れても急速な規則化反応によりL10構造を持つ。しかし、スパッタリング法や蒸着法などの気相急冷法を用いてFePt薄膜を作製すると、固相の規則変態点を経ないで固相が形成されるために、規則化していないfcc状態のFePt相しか得られないという問題がある。
このようなことから、グラニュラー型の磁気記録媒体が提案されている。このグラニュラー媒体は、酸化物等の非磁性マトリックス中に磁性微粒子を析出させた構造を有し、磁性粒子間が非磁性物質の介在により磁気的に絶縁される構造が必要となる。
グラニュラー型の磁気記録媒体及びこれに関連する公知文献としては、特許文献1、特許文献2、特許文献3、特許文献4を挙げることができる。
このような磁気記録層は、多くはスパッタリング成膜法により形成されるが、一般にマグネトロンスパッタ装置で金属酸化物の含まれる強磁性材スパッタリングターゲットをスパッタしようとすると、スパッタ時に金属酸化物の不用意な脱離やターゲットに内包される空孔を起点として異常放電が生じパーティクル(基板上に付着したゴミ)が発生するという問題がある。この問題を解決するには、金属酸化物と母材合金との密着性を高め、さらに、スパッタリングターゲットを高密度化させる必要がある。
1)Ptが5~50mol%、SiO2が5~15mol%、Snが0.05~0.60mol%、残余がFeである組成のスパッタリングターゲットであって、金属素地(A)中に分散しているSiO2の粒子(B)中に、前記Snが含有されていることを特徴とする強磁性材スパッタリングターゲットを提供する。
2)前記SiO2以外に、さらにTiO2、Ti2O3、Cr2O3、Ta2O5,Ti5O9、B2O3、CoO、Co3O4から選択した一種以上の酸化物を5~15mol%含有し、これらの酸化物が金属素地(A)中に分散しており、かつこれらの酸化物中に、Snが含有されていることを特徴とする上記1)記載の強磁性材スパッタリングターゲットを提供する。
3)Ru、B、Cuから選択した一種以上の元素を、0.5~10mol%含有することを特徴とする上記1)~2)のいずれか一項に記載の強磁性材スパッタリングターゲットを提供する。
4)相対密度が97%以上であることを特徴とする上記1)~3)のいずれか一項に記載の強磁性材スパッタリングターゲットを提供する。
5)Ptが5~50mol%、SiO2が5~15mol%、Snが0.05~0.60mol%、残余がFeである組成となるように、SiO2粉とSnO2粉若しくはSn粉を、予め調合し混合した後、さらにこの混合粉に、上記組成となるように同様に調合したFe粉、Pt粉若しくはFe-Pt合金粉を混合し、これらの混合粉をホットプレスして、金属素地(A)中にSiO2の粒子(B)を分散させると共に、該分散したSiO2の粒子(B)中に、前記Snが含有された組織の焼結体を得ることを特徴とする強磁性材スパッタリングターゲットの製造方法を提供する。
6)前記SiO2以外に、さらにTiO2、Ti2O3、Cr2O3、Ta2O5,Ti5O9、B2O3、CoO、Co3O4から選択した一種以上の酸化物を5~15mol%添加し、これらの酸化物が金属素地(A)中に分散させると共に、かつこれらの酸化物中に、Snが含有された組織の焼結体を得ることを特徴とする上記4)記載の強磁性材スパッタリングターゲットの製造方法を提供する。
7)Ru、B、Cuから選択した一種以上の元素を0.5~10mol%添加し、焼結することを特徴とする上記4)~5)のいずれか一項に記載の強磁性材スパッタリングターゲットの製造方法を提供する。
さらに、酸化物の異常放電を抑制し、異常放電が原因となるスパッタリング中のパーティクル発生を減少させ、歩留まり向上によるコスト改善効果を得ることができるという優れた効果を有する。
SiO2の量を5mol%以上15mol%以下とするのは、それを外れる添加量では、グラニュラー型の磁気記録媒体としての特性を失う虞があるからである。
その有効添加量は、0.05~0.60mol%の範囲である。下限値未満であると、SiO2に導電性を付与する効果がなく、また上限値を超えると、スパッタ膜の磁気特性に影響を与え、所望の特性を得られなくなる虞がある。
これらの酸化物が金属素地(A)中に分散しており、かつこれらの酸化物中に、前記SiO2と同様に、Snを含有させることもできる。これらの酸化物は、必要とされる強磁性膜の種類に応じて、任意に選択し添加することができる。前記添加量は、添加の効果を発揮させるための有効量である。
本発明においても同様、高密度とするのが好ましい。本願発明では、相対密度97%以上を達成することができる。
式:計算密度=シグマΣ(構成成分の分子量×構成成分のモル比)/Σ(構成成分の分子量×構成成分のモル比/構成成分の文献値密度)
ここでΣは、ターゲットの構成成分の全てについて、和をとることを意味する。
さらに、上記の通り、Snの添加によりSiO2の粒子に導電性を付与し、異常放電の発生を防止することが可能となり、歩留まり低下の原因となるパーティクルの発生量を低減させることができるという効果がある。
一方、小さ過ぎると、酸化が促進されて成分組成が範囲内に入らないなどの問題があるため、0.1μm以上とすることがさらに望ましい。
また、ミキサーとしては、遊星運動型ミキサーあるいは遊星運動型攪拌混合機であることが好ましい。さらに、混合中の酸化の問題を考慮すると、不活性ガス雰囲気中で混合することが好ましい。
本発明において、重要なことは金属素地(A)中にSiO2の粒子(B)を分散させると共に、該分散したSiO2の粒子(B)中に、前記Snが含有された組織の焼結体を得ることである。
Sn若しくはSnO2を添加しない場合の電気抵抗は5.5×1016Ω・cmを超え、絶縁物質として作用するため、異常放電を引き起こす原因となっていたが、本願発明はこの現象を無くすことが可能となり、アーキング(異常放電)の発生は著しく減少した。
実施例1では、原料粉末として、あらかじめ、平均粒径1μmのSiO2粉末と平均粒径1μmのSnO2粉末を、SiO2粉末95wt%、SnO2粉末5wt%となるように秤量し、ボールミルにて1時間混合し、SiO2-SnO2混合粉末を用意した。この混合粉末と、平均粒径3μmのPt粉末、平均粒径3μmのFe粉末とを、ターゲットの組成が50Fe-40Pt-10(SiO2-SnO2)(mol%)となるように、Fe粉末24.80wt%、Pt粉末69.56wt%、SiO2-SnO2混合粉末5.64wt%の重量比率で秤量した。
この混合粉をカーボン製の型に充填し、真空雰囲気中、温度1100°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして、焼結体を得た。
さらにこれを旋盤で切削加工して直径が180mm、厚さが7mmの円盤状のターゲットを得た。
比較例1では、原料粉末として、平均粒径3μmのPt粉末、平均粒径3μmのFe粉末、平均粒径1μmのSiO2粉を用意した。これらの粉末をターゲット組成が50Fe-40Pt-10SiO2(mol%)となるように、Fe粉末24.94wt%、Pt粉末69.69wt%、SiO2粉末5.37wt%の重量比率で秤量した。
次に、この混合粉をカーボン製の型に充填し、真空雰囲気中、温度1100°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして、焼結体を得た。さらにこれを旋盤で直径が180mm、厚さが7mmの円盤状のターゲットへ加工した。
実施例2では、原料粉末として、あらかじめ、平均粒径1μmのSiO2粉末と平均粒径1μmのSnO2粉末を、SiO2粉末95wt%、SnO2粉末5wt%となるように秤量し、ボールミルにて1時間混合し、SiO2-SnO2混合粉末を用意した。この混合粉末と、平均粒径3μmのPt粉末、平均粒径3μmのFe粉末、平均粒系5μmのCu粉末、平均粒径3μmのCr2O3粉末とを、ターゲットの組成が75Fe-5Pt-10Cu-5Cr2O3-5(SiO2-SnO2)(mol%)となるように、Fe粉末60.97wt%、Pt粉末14.20wt%、Cu粉末9.25wt%、Cr2O3粉末11.06wt%、SiO2-SnO2混合粉末4.52wt%の重量比率で秤量した。
この混合粉をカーボン製の型に充填し、真空雰囲気中、温度1100°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして、焼結体を得た。
さらにこれを旋盤で切削加工して直径が180mm、厚さが7mmの円盤状のターゲットを得た。
比較例2では、原料粉末として、平均粒径3μmのPt粉末、平均粒径3μmのFe粉末、平均粒系5μmのCu粉末、平均粒径3μmのCr2O3粉末と平均粒径1μmのSiO2粉を用意した。これらの粉末をターゲット組成が75Fe-5Pt-10Cu-5Cr2O3-5SiO2(mol%)となるように、Fe粉末61.06wt%、Pt粉末14.22wt%、Cu粉末9.26wt%、Cr2O3粉末11.08wt%、SiO2粉末4.38wt%の重量比率で秤量した。この成分組成には、Snが含有されていない。
次に、この混合粉をカーボン製の型に充填し、真空雰囲気中、温度1100°C、保持時間2時間、加圧力30MPaの条件のもとホットプレスして、焼結体を得た。さらにこれを旋盤で直径が180mm、厚さが7mmの円盤状のターゲットへ加工した。
なお、上記実施例においては、SiO2、Cr2O3の添加の例を示したが、さらにTiO2、Ti2O3、Ta2O5,Ti5O9、B2O3、CoO、Co3O4から選択した一種以上の酸化物を添加した場合でも、SiO2を添加した場合と同等の効果を得ることができる。
特に詳しい説明をしていないが、Fe-Pt-C-酸化物についても、本願発明の手段を適用することにより、酸化物起因による異常放電を抑制することができ、パーティクル低減につながる効果があることを確認している。
Claims (7)
- Ptが5~50mol%、SiO2が5~15mol%、Snが0.05~0.60mol%、残余がFeである組成のスパッタリングターゲットであって、金属素地(A)中に分散しているSiO2の粒子(B)中に、前記Snが含有されていることを特徴とする強磁性材スパッタリングターゲット。
- 前記SiO2以外に、さらにTiO2、Ti2O3、Cr2O3、Ta2O5,Ti5O9、B2O3、CoO、Co3O4から選択した一種以上の酸化物を5~15mol%含有し、これらの酸化物が金属素地(A)中に分散しており、かつこれらの酸化物中に、Snが含有されていることを特徴とする請求項1記載の強磁性材スパッタリングターゲット。
- Ru、B、Cuから選択した一種以上の元素を、0.5~10mol%含有することを特徴とする請求項1~2のいずれか一項に記載の強磁性材スパッタリングターゲット。
- 相対密度が97%以上であることを特徴とする請求項1~3のいずれか一項に記載の強磁性材スパッタリングターゲット。
- Ptが5~50mol%、SiO2が5~15mol%、Snが0.05~0.60mol%、残余がFeである組成となるように、SiO2粉とSnO2粉若しくはSn粉を、予め調合し混合した後、さらにこの混合粉に、上記組成となるように同様に調合したFe粉、Pt粉若しくはFe-Pt合金粉を混合し、これらの混合粉をホットプレスして、金属素地(A)中にSiO2の粒子(B)を分散させると共に、該分散したSiO2の粒子(B)中に、前記Snが含有された組織の焼結体を得ることを特徴とする強磁性材スパッタリングターゲットの製造方法。
- 前記SiO2以外に、さらにTiO2、Ti2O3、Cr2O3、Ta2O5,Ti5O9、B2O3、CoO、Co3O4から選択した一種以上の酸化物を5~15mol%添加し、これらの酸化物が金属素地(A)中に分散させると共に、かつこれらの酸化物中に、Snが含有された組織の焼結体を得ることを特徴とする請求項4記載の強磁性材スパッタリングターゲットの製造方法。
- Ru、B、Cuから選択した一種以上の元素を0.5~10mol%添加し、焼結することを特徴とする請求項4~5のいずれか一項に記載の強磁性材スパッタリングターゲットの製造方法。
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JPWO2014125897A1 (ja) * | 2013-02-15 | 2017-02-02 | Jx金属株式会社 | Co又はFeを含有するスパッタリングターゲット |
WO2021085410A1 (ja) * | 2019-11-01 | 2021-05-06 | 田中貴金属工業株式会社 | 熱アシスト磁気記録媒体用スパッタリングターゲット |
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CN104975264B (zh) | 2010-07-29 | 2020-07-28 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
WO2012029498A1 (ja) | 2010-08-31 | 2012-03-08 | Jx日鉱日石金属株式会社 | Fe-Pt系強磁性材スパッタリングターゲット |
CN103270554B (zh) | 2010-12-20 | 2016-09-28 | 吉坤日矿日石金属株式会社 | 分散有C粒子的Fe-Pt型溅射靶 |
MY156716A (en) | 2010-12-21 | 2016-03-15 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film and process for production thereof |
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JP5689543B2 (ja) | 2012-08-31 | 2015-03-25 | Jx日鉱日石金属株式会社 | Fe系磁性材焼結体 |
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MY184036A (en) | 2016-02-19 | 2021-03-17 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording medium, and magnetic thin film |
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