WO2012056511A1 - 接着フィルム及びウエハ加工用テープ - Google Patents

接着フィルム及びウエハ加工用テープ Download PDF

Info

Publication number
WO2012056511A1
WO2012056511A1 PCT/JP2010/068871 JP2010068871W WO2012056511A1 WO 2012056511 A1 WO2012056511 A1 WO 2012056511A1 JP 2010068871 W JP2010068871 W JP 2010068871W WO 2012056511 A1 WO2012056511 A1 WO 2012056511A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
adhesive layer
adhesive
breaking strength
processing tape
Prior art date
Application number
PCT/JP2010/068871
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
鈴木　俊宏
石渡　伸一
泰正 盛島
金　永錫
Original Assignee
古河電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to CN2010800692089A priority Critical patent/CN103119112A/zh
Priority to KR1020137007759A priority patent/KR20130129185A/ko
Priority to PCT/JP2010/068871 priority patent/WO2012056511A1/ja
Publication of WO2012056511A1 publication Critical patent/WO2012056511A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • C09J7/403—Adhesives in the form of films or foils characterised by release liners characterised by the structure of the release feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin

Definitions

  • the present invention relates to an adhesive film and a wafer processing tape.
  • the present invention relates to an adhesive film and a wafer processing tape having a laminated dicing die bonding film having two functions of a dicing tape and a die bonding film.
  • a dicing tape for fixing a semiconductor wafer when the semiconductor wafer is cut and separated into individual chips (dicing) and a semiconductor chip that has been cut are bonded to a lead frame, a package substrate, or the like, or stacked.
  • a dicing die bonding film As a package, a dicing die bonding film (DDF) has been developed which has two functions of an adhesive film (also referred to as a die bonding film or die attach film) for laminating and bonding semiconductor chips.
  • Some of these dicing die bonding films have been pre-cut in consideration of workability such as attachment to a semiconductor wafer and attachment to a ring frame during dicing.
  • an adhesive layer is laminated on the entire surface of a long release film.
  • the adhesive layer of the adhesive film is cut with a circular blade corresponding to the semiconductor wafer, and the outside of the circular portion is peeled off from the release film (hereinafter referred to as the adhesive layer winding process),
  • the adhesive layer of the circular adhesive film hollowed out by the winding process of the adhesive layer and the adhesive layer of the dicing tape in which the adhesive layer is laminated on the base film are bonded together by heating and pressing, and the dicing tape
  • a circular blade corresponding to the ring frame is cut into a ring frame, and a portion corresponding to the ring frame is peeled off and wound up.
  • the adhesive layer outside the circular portion is peeled off from the release film and wound while applying a certain force to the adhesive layer outside the circular portion. Therefore, the phenomenon that the adhesive layer outside the circular portion is cut off during the operation of winding up the adhesive layer has occurred.
  • an initial operation such as setting the end of the adhesive layer on a roll for winding in advance, and when the adhesive layer is cut, the winding operation of the adhesive layer is performed.
  • the productivity of the wafer processing tape having the dicing die bonding film subjected to the pre-cut processing is lowered because it must be temporarily stopped and restarted after the initial work.
  • the width of the wafer processing tape is widened in order to solve the above problem, the phenomenon that the adhesive layer outside the circular portion is cut in the winding process of the adhesive layer is eliminated, but unnecessary. As a result, the amount of the adhesive layer on the outer side of the circular portion, the amount of unnecessary wafer processing tape in semiconductor wafer dicing, semiconductor die bonding chips, and the like increases.
  • the present invention has been made to solve the above-described problems, and an unnecessary adhesive layer when producing a wafer processing tape precut into a shape corresponding to the shape of a semiconductor wafer.
  • Adhesive film capable of preventing breakage of the wound adhesive layer and improving the productivity of precut processed wafer processing tape in the process of peeling off the film from the release film and winding the film
  • An object is to provide a wafer processing tape manufactured using a film.
  • the breaking strength per unit of the adhesive layer is 87.5 times the peeling force per unit from the release film of the adhesive layer.
  • the outer adhesive layer having a predetermined shape is broken.
  • the adhesive film according to the first aspect of the present invention is an adhesive film in which an adhesive layer is laminated on a long release film, and the adhesive layer is peeled per unit from the release film.
  • the breaking strength per unit of the adhesive layer is 87.5 times or more with respect to force.
  • peel force varies depending on the size in the direction perpendicular to the peel direction
  • breaking strength varies depending on the size in the tensile direction. Therefore, “per unit” means that the size in the direction perpendicular to the peeling direction and the size in the pulling direction are the same (for example, the size in the direction perpendicular to the peeling direction is 10 mm, and the peeling force is When measured, the breaking strength is measured assuming that the size in the tensile direction is 10 mm), and the breaking strength with respect to the peeling force at this time is 87.5 times or more.
  • the adhesive film is an adhesive film in which the cut corresponding to the semiconductor wafer as described above is in the adhesive layer in advance, but the cut is not in the adhesive layer. Also good.
  • the adhesive film according to the second aspect of the present invention is the adhesive film according to the first aspect of the present invention described above, wherein the adhesive layer is bonded to the peeling force per unit of the adhesive layer from the release film.
  • the breaking strength per unit of the agent layer is 100 times or more.
  • the tape for wafer processing which concerns on the 1st aspect of this invention is the said adhesive layer of the adhesive film by which the adhesive layer was laminated
  • the adhesive layer of the said adhesive film is bonded together, It is characterized by the above-mentioned.
  • an outer adhesive layer having a predetermined shape which is not required when a wafer processing tape precut into a predetermined shape corresponding to the shape of a semiconductor wafer is produced from the release film.
  • the outer adhesive layer having a predetermined shape can be prevented from being broken.
  • the productivity of a pre-cut wafer processing tape in which the adhesive layer of the adhesive layer film and the adhesive layer of the adhesive film are bonded together can be improved.
  • a wafer processing tape with a high production efficiency with a small amount of an outer adhesive layer having a predetermined shape, a semiconductor wafer dicing, a semiconductor die bonding chip, etc., and an unnecessary amount of the wafer processing tape. it can.
  • (A) is a general-view figure of the adhesive film which concerns on one Embodiment of this invention, (b) is the same sectional drawing.
  • (A) is a top view of the adhesive film for demonstrating the formation process of a notch
  • (A) is a general-view figure of the wafer processing tape which concerns on one Embodiment of this invention, (b) is the same top view, (c) is the same sectional drawing.
  • FIG.1 (a) is a general-view figure of the adhesive film which concerns on one Embodiment of this invention
  • FIG.1 (b) is the same sectional drawing.
  • the adhesive film 20 ⁇ / b> B has a configuration in which an adhesive layer 12 is laminated on a long release film 11.
  • the release film 11A is further laminated on the adhesive layer 12, and the adhesive film is capable of producing a rolled product.
  • the release film described in the claims corresponds to the release film 11.
  • an adhesive film 20 (for example, see FIG. 4C) in which the adhesive layer 12 is precut into a circular label shape corresponding to the shape of the semiconductor wafer is used. Then, next, the method to produce the adhesive film 20 by which the precut process was carried out is demonstrated with reference to FIG.2 and FIG.3.
  • FIG. 2 (a) is a plan view of an adhesive film 20A for explaining a cut forming process for making a cut in the adhesive layer 12 into a circular label shape
  • FIG. 2 (b) is a cross-sectional view thereof.
  • FIG. 3 is a schematic diagram for explaining a winding process of the adhesive layer that peels and winds the adhesive layer 12 outside the unnecessary circular label shape from the release film 11.
  • a circular label-shaped cut 22 corresponding to the shape of the semiconductor wafer is formed in the adhesive layer 12 (forming process of the cut 22).
  • the adhesive layer 12 is formed into an adhesive layer (hereinafter referred to as a circular adhesive layer portion) 12a having a circular label shape inside the notch 22, and an adhesive layer outside the notch 22 (hereinafter referred to as peripheral adhesive). 12b).
  • the notch 22 is formed so as to reach from the front surface 23 a of the adhesive layer 12 to the back surface 23 b of the adhesive layer 12 in contact with the release film 11.
  • the peripheral adhesive layer portion 12b was peeled off from the release film 11 and wound up while applying a certain force to the peripheral adhesive layer portion 12b. Only the circular adhesive layer portion 12a is left on the release film 11 (adhesive layer winding step). Thereby, the adhesive film 20 in which the adhesive layer 12 is precut into a circular label shape corresponding to the shape of the semiconductor wafer is produced.
  • the adhesive film 20B according to this embodiment is characterized in that it has the following configuration.
  • the breaking strength per unit of the adhesive layer 12 is 87.5 times or more, preferably 100 times or more with respect to the peeling force per unit.
  • the peeling force varies depending on the magnitude in the direction perpendicular to the peeling direction
  • the breaking strength varies depending on the magnitude in the tensile direction. Therefore, “per unit” means that the size in the direction perpendicular to the peeling direction is the same as the size in the pulling direction. For example, the size in the direction perpendicular to the peeling direction is 10 mm, and the peeling force is measured. In this case, the breaking strength is measured by setting the size in the tensile direction to 10 mm.
  • FIG. 4A is a schematic view of a wafer processing tape (dicing die bonding film) according to an embodiment of the present invention
  • FIG. 4B is a plan view thereof
  • FIG. FIG. 4A is a schematic view of a wafer processing tape (dicing die bonding film) according to an embodiment of the present invention
  • FIG. 4B is a plan view thereof
  • FIG. FIG. 4A is a schematic view of a wafer processing tape (dicing die bonding film) according to an embodiment of the present invention
  • FIG. 4B is a plan view thereof
  • the wafer processing tape 10 has a pressure-sensitive adhesive on the circular adhesive layer portion 12a of the pre-cut adhesive film 20 and the base film 14. It has the structure by which the adhesive layer 15 of the adhesive film 13 with which the layer 15 was laminated
  • the pressure-sensitive adhesive film 13 covers the circular adhesive layer portion 12a and has a circular label portion 13a provided so as to be in contact with the release film 11 around the circular adhesive layer portion 12a, and an outer side of the circular label portion 13a. And a peripheral portion 13b that surrounds.
  • the peripheral portion 13b includes a form that completely surrounds the outer side of the circular label portion 13a and a form that is not completely surrounded as illustrated.
  • the circular label portion 13a has a shape corresponding to a ring frame for dicing.
  • the pre-cut wafer processing tape 10 is manufactured as shown in FIGS. 2 and 3 in which an adhesive film 20 having a circular adhesive layer portion 12a laminated on the release film 11 is prepared. Thereafter, the pressure-sensitive adhesive film 13 and the adhesive film 20 are bonded together by heating so that the pressure-sensitive adhesive layer 15 and the circular adhesive layer portion 12a overlap each other. By peeling and forming the circular label portion 13a and the peripheral portion 13b, the pre-cut wafer processing tape 10 is produced.
  • the adhesive film 20 that has been precut and the circular label portion 13a and the peripheral portion 13b are heated and bonded together to be precut.
  • the wafer processing tape 10 may be manufactured.
  • the wafer processing tape 10 Since the wafer processing tape 10 according to the present embodiment is manufactured using the adhesive film 20B according to the present embodiment, the wafer processing tape 10 has the same characteristics as the adhesive film 20B according to the present embodiment. That is, the breaking strength per unit of the adhesive layer 12 is 87.5 times or more, preferably 100 times or more with respect to the peeling force per unit from the release film 11 of the adhesive layer 12.
  • the release film 11 is used for the purpose of improving the handleability of the adhesive layer 12.
  • Examples of the release film 11 include a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polychloride chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polybutylene terephthalate film.
  • Polyurethane film ethylene / vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide film A fluororesin film or the like is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient.
  • the surface tension of the release film 11 is preferably 40 mN / m or less, and more preferably 35 mN / m or less. Such a release film 11 having a low surface tension can be obtained by appropriately selecting the material, and can also be obtained by applying a release treatment by applying a silicone resin or the like to the surface of the film. .
  • the film thickness of the release film 11 is usually about 5 to 300 ⁇ m, preferably about 10 to 200 ⁇ m, and particularly preferably about 20 to 150 ⁇ m.
  • the release film 11A is not limited as long as it can be peeled off from the adhesive layer 12, but a polyethylene terephthalate film, a polypropylene film, and a polyethylene film are preferable.
  • the release film 11A is preferably coated or baked with silicon.
  • the thickness of the release film 11A is not particularly limited, but is preferably 15 to 125 ⁇ m.
  • the adhesive layer 12 is attached to the back surface of the semiconductor chip when the semiconductor chip is picked up after the semiconductor wafer is bonded and diced, and is used as an adhesive for fixing the chip to the substrate or the lead frame. It is what is done.
  • an epoxy group-containing acrylic copolymer contains 0.5 to 6% by mass of glycidyl acrylate or glycidyl methacrylate having an epoxy group.
  • the content is preferably 0.5% by mass or more, and gelation can be suppressed if it is 6% by mass or less.
  • the glass transition temperature (Tg) of the epoxy group-containing acrylic copolymer is preferably ⁇ 10 ° C. or higher and 30 ° C. or lower.
  • the amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by mass, but the remainder is an alkyl having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate.
  • Mixtures of acrylates, alkyl methacrylates, and styrene and acrylonitrile can be used. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable.
  • the mixing ratio is preferably adjusted in consideration of the glass transition temperature (Tg) of the copolymer.
  • the weight average molecular weight of the acrylic copolymer is preferably 50,000 or more, particularly preferably in the range of 200,000 to 1,000,000. If the molecular weight is too low, film formation will be insufficient, and if it is too high, compatibility with other components will deteriorate, resulting in hindering film formation.
  • a phenolic resin can be used as the curing agent.
  • a condensate of phenols such as alkylphenol, polyhydric phenol, naphthol and aldehydes is used without particular limitation.
  • the phenolic hydroxyl group contained in these phenolic resins can easily undergo an addition reaction with the epoxy group of the epoxy resin by heating to form a cured product having high impact resistance.
  • Phenol resins include phenol novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A type novolak resin, or modified thereof. A thing etc. are used preferably.
  • a thermally activated latent epoxy resin curing agent can also be used as a curing agent.
  • This curing agent is a type of curing agent that does not react with the epoxy resin at room temperature but is activated by heating at a certain temperature or more and reacts with the epoxy resin.
  • an activation method a method of generating active species (anions and cations) by a chemical reaction by heating, a dispersion that is stably dispersed in the epoxy resin near room temperature, is compatible with and dissolved in the epoxy resin at a high temperature, and a curing reaction is performed.
  • a method for starting a method for starting a curing reaction by elution at a high temperature with a molecular sieve encapsulated type curing agent, a method using a microcapsule, and the like.
  • thermally active latent epoxy resin curing agent examples include various onium salts, high melting point active hydrogen compounds such as dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, and imidazole compounds.
  • a curing accelerator or the like can be used as an auxiliary agent.
  • a hardening accelerator which can be used for this invention
  • a tertiary amine, imidazoles, a quaternary ammonium salt etc. can be used.
  • imidazoles preferably used in the present invention include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate and the like. These may be used alone or in combination of two or more.
  • Imidazoles are commercially available from Shikoku Kasei Kogyo Co., Ltd. under the trade names 2E4MZ, 2PZ-CN, 2PZ-CNS, for example.
  • a filler may be blended.
  • the filler include silica such as crystalline silica and synthetic silica, and inorganic filler such as alumina and glass balloon.
  • silica such as crystalline silica and synthetic silica
  • inorganic filler such as alumina and glass balloon.
  • synthetic silica is preferable as the filler, and in particular, synthetic silica of the type from which the ⁇ -ray source that causes malfunction of the semiconductor device is removed as much as possible is optimal.
  • the shape of the filler any of a spherical shape, a needle shape, and an amorphous type can be used, but a spherical filler capable of closest packing is particularly preferable.
  • a coupling agent can be blended in order to improve interfacial bonding between different materials.
  • a silane coupling agent is preferable as the coupling agent.
  • silane coupling agents include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, ⁇ -ureidopropyltriethoxysilane, N- ⁇ -aminoethyl- ⁇ - Examples include aminopropyltrimethoxysilane.
  • the blending amount of the coupling agent is preferably 0.1 to 10 parts by weight with respect to a total of 100 parts by weight of the composition forming each of the dispersed phase and the continuous phase, from the effects of addition, heat resistance and cost. .
  • the varnishing solvent it is preferable to use methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol, 2-methoxyethanol or the like having a relatively low boiling point.
  • the high boiling point solvent include dimethylacetamide, dimethylformamide, methylpyrrolidone, cyclohexanone and the like.
  • the thickness of the adhesive layer 12 may be set as appropriate, but is preferably about 5 to 100 ⁇ m.
  • the adhesive film 13 is not particularly limited, and has a sufficient adhesive force so that the semiconductor wafer does not peel when dicing the semiconductor wafer. When the chip is picked up after dicing, it can be easily removed from the adhesive layer 12. Any material may be used as long as it exhibits low adhesive strength so that it can be peeled off. For example, what provided the adhesive layer 15 in the base film 14 can be used conveniently.
  • the base film 14 of the adhesive film 13 can be used without particular limitation as long as it is a conventionally known film.
  • a radiation curable material is used as the adhesive layer 15 described later, It is preferable to use a material having permeability.
  • the materials include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic.
  • the base film 14 may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer.
  • the thickness of the base film 14 is not particularly limited and may be set as appropriate, but is preferably 50 to 200 ⁇ m.
  • the resin used for the pressure-sensitive adhesive layer 15 of the pressure-sensitive adhesive film 13 is not particularly limited, and known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins and the like used for pressure-sensitive adhesives are used. Can be used. It is preferable to prepare a pressure-sensitive adhesive by appropriately mixing an acrylic pressure-sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent and the like with the resin of the pressure-sensitive adhesive layer 15.
  • the thickness of the pressure-sensitive adhesive layer 15 is not particularly limited and may be appropriately set, but is preferably 5 to 30 ⁇ m.
  • a radiation-polymerizable compound can be blended in the pressure-sensitive adhesive layer 15 to facilitate peeling from the adhesive layer 12 by radiation curing.
  • the radiation polymerizable compound for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is used.
  • trimethylolpropane triacrylate pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol diacrylate Acrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are applicable.
  • Urethane acrylate oligomers include polyester compounds or polyether compounds such as polyol compounds and polyisocyanate compounds (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene).
  • the pressure-sensitive adhesive layer 15 may be a mixture of two or more selected from the above resins.
  • photopolymerization initiator for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used.
  • the blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer.
  • Methyl ethyl ketone was added to the adhesive layer compositions 1A to 1D having the composition shown in Table 1 below, and the mixture was stirred and mixed to prepare an adhesive varnish.
  • the adhesive varnishes of the prepared adhesive layer compositions 1A to 1D were applied on the release film 11 in the combinations shown in Tables 2 and 3 so that the thickness after drying was 20 ⁇ m, and 110 ° C.
  • an adhesive layer 12 was produced on the release film 11 respectively.
  • another release film 11A similar to the above was laminated on each adhesive layer 12, and in Examples 1 to 4 shown in Table 2 below and Comparative Examples 1 to 4 shown in Table 3 below.
  • An adhesive film 20B having a three-layer structure in which the release film 11, the adhesive layer 12, and the release film 11A were laminated in this order was produced.
  • A1 (acrylic polymer) in Table 1 is an acrylic copolymer having a weight average molecular weight of 850,000 and a glass transition temperature (Tg) of 15 ° C.
  • B1 (epoxy resin (solid)) is a phenol biphenylene type epoxy resin having an epoxy equivalent of 265 to 285.
  • B2 (epoxy resin (liquid)) is a liquid bisphenol A type epoxy resin having an epoxy equivalent of 162 to 172.
  • C1 (curing agent (1)) is dicyandiamide, and C2 (curing agent (2)) is an aralkylphenol resin.
  • D1 (curing accelerator) is an imidazole compound (2-phenyl 4,5-dihydroxymethylimidazole).
  • E1 (silica filler) is spherical synthetic silica having an average particle diameter of 2 ⁇ m.
  • S314 is a release-treated polyethylene terephthalate (PET) film (trade name, manufactured by Teijin DuPont Films), and K-1504 is a release-treated PET film (Toyobo Co., Ltd.). Product name).
  • PET polyethylene terephthalate
  • K-1504 is a release-treated PET film (Toyobo Co., Ltd.).
  • the maximum load until the specimen is pulled and broken at a linear speed of 300 mm / min using a strograph (VE10) manufactured by Toyo Seiki Seisakusho in accordance with JIS B 7721 and JIS K 6301. was measured.
  • the unit of breaking strength is [N / 10 mm].
  • the produced test piece was divided into a release film 11, an adhesive layer 12, and a laminate of a shape-retaining tape by a strograph (VE10) manufactured by Toyo Seiki Seisakusho Co., Ltd., and a linear velocity of 300 mm / min.
  • the peeling force between the release film 11 and the adhesive layer 12 was measured.
  • the unit of peeling force is [N / 10 mm].
  • the adhesive film 12 is separated from the release film 11 and the laminate of the adhesive layer 12 and the shape-retaining tape, and the adhesive layer 12 and the laminate of the shape-retaining tape are separated from the release film 11. This is because the adhesive layer 12 is stretched when only it is grasped and peeled off.
  • Evaluation of the precut property consists of the release film 11 and the adhesive layer 12 obtained by peeling off the release film 11A on one side of the adhesive films 20B according to Examples 1 to 4 and the adhesive films according to Comparative Examples 1 to 4.
  • the processing speed is 10 m / min, 100 m
  • the peripheral adhesive layer portion 12 b is separated from the release film 11.
  • the case where it peeled and wound and a fracture did not occur was evaluated as “ ⁇ ”, and the case where a fracture occurred was evaluated as “x”.
  • variety of the original fabric of an adhesive film is 390 mm and 450 mm.
  • the ratio between the breaking strength and the peeling force (breaking strength / peeling force) is in the range of 87.5 or more that defines the ratio between the breaking strength and the peeling force. Since it was 150, the pre-cut property resulted in no breaks in both cases where the width of the original fabric was 390 mm and 450 mm.
  • the adhesive film 20B of Example 2 is pre-cut because the ratio between the breaking strength and the peeling force (breaking strength / peeling force) is 100 in the above range of 87.5 or more that defines the ratio between the breaking strength and the peeling force.
  • breaking strength / peeling force 100 in the above range of 87.5 or more that defines the ratio between the breaking strength and the peeling force.
  • the adhesive film 20B of Example 3 is pre-cut because the ratio between the breaking strength and the peeling force (breaking strength / peeling force) is 225 in the range of 87.5 or more that defines the ratio between the breaking strength and the peeling force.
  • breaking strength / peeling force 225 in the range of 87.5 or more that defines the ratio between the breaking strength and the peeling force.
  • the ratio between the breaking strength and the peeling force is 150 in the above range of 87.5 or more which defines the ratio between the breaking strength and the peeling force.
  • the width of the original fabric was 390 mm and the case where it was 450 mm resulted in no breakage.
  • the ratio between the breaking strength and the peeling force (breaking strength / peeling force) was outside the above 87.5 range that defines the ratio between the breaking strength and the peeling force. Since it was 83.3, the pre-cut property was the result that the fracture did not occur when the width of the original fabric was 450 mm, but the fracture occurred when it was 390 mm.
  • the adhesive film of Comparative Example 2 has a pre-cut because the ratio between the breaking strength and the peeling force (breaking strength / peeling force) is 50 outside the above 87.5 range that defines the ratio between the breaking strength and the peeling force.
  • the property was the result of the occurrence of breakage in both cases where the width of the original fabric was 390 mm and 450 mm.
  • the ratio between the breaking strength and the peeling force (breaking strength / peeling force) is 58.3 outside the above range of 87.5 or more which defines the ratio between the breaking strength and the peeling force.
  • the precut property when the width of the original fabric was 450 mm, the fracture never occurred, but when it was 390 mm, the fracture occurred.
  • the ratio between the breaking strength and the peeling force (breaking strength / peeling force) is 38.9 outside the above range of 87.5 or more that defines the ratio between the breaking strength and the peeling force.
  • the precut property was the result of occurrence of breakage in both cases where the width of the original fabric was 390 mm and 450 mm.
  • the breaking strength per unit of the adhesive layer 12 is 87.5 times or more with respect to the peeling force per unit from the release film 11 of the adhesive layer 12, preferably Is a winding process of the adhesive layer when producing the wafer processing tape 10 precut into a shape corresponding to the shape of the semiconductor wafer by using the adhesive film 20 according to this embodiment which is 100 times or more. It is possible to prevent the peripheral adhesive layer portion 12b from being broken. Moreover, the productivity of the pre-cut wafer processing tape 10 produced using the adhesive film 20 according to the present embodiment can be improved.
  • the production of the wafer processing tape 10 with high production efficiency with a small amount of the peripheral adhesive layer portion 12b which becomes unnecessary and a small amount of the wafer processing tape 10 which becomes unnecessary in the dicing of the semiconductor wafer, the semiconductor die bonding chip, etc. can do.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
PCT/JP2010/068871 2010-10-25 2010-10-25 接着フィルム及びウエハ加工用テープ WO2012056511A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800692089A CN103119112A (zh) 2010-10-25 2010-10-25 粘接膜及晶片加工用带
KR1020137007759A KR20130129185A (ko) 2010-10-25 2010-10-25 접착 필름 및 웨이퍼 가공용 테이프
PCT/JP2010/068871 WO2012056511A1 (ja) 2010-10-25 2010-10-25 接着フィルム及びウエハ加工用テープ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/068871 WO2012056511A1 (ja) 2010-10-25 2010-10-25 接着フィルム及びウエハ加工用テープ

Publications (1)

Publication Number Publication Date
WO2012056511A1 true WO2012056511A1 (ja) 2012-05-03

Family

ID=45993267

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/068871 WO2012056511A1 (ja) 2010-10-25 2010-10-25 接着フィルム及びウエハ加工用テープ

Country Status (3)

Country Link
KR (1) KR20130129185A (zh)
CN (1) CN103119112A (zh)
WO (1) WO2012056511A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015146254A1 (ja) * 2014-03-26 2015-10-01 リンテック株式会社 樹脂膜形成用シート積層体
EP3098277A1 (en) * 2015-05-27 2016-11-30 Henkel AG & Co. KGaA Pre-cut film and a production method thereof
JP2021155680A (ja) * 2020-03-30 2021-10-07 リンテック株式会社 フィルム状接着剤

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102570822B1 (ko) * 2016-02-26 2023-08-24 가부시끼가이샤 레조낙 접착 필름 및 다이싱·다이 본딩 필름

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06108015A (ja) * 1992-09-30 1994-04-19 Hitachi Chem Co Ltd エポキシ接着フィルムの製造方法
JPH10264331A (ja) * 1997-03-26 1998-10-06 Oji Paper Co Ltd 剥離紙
JP2005136307A (ja) * 2003-10-31 2005-05-26 Lintec Corp 貼合装置
JP2005162818A (ja) * 2003-12-01 2005-06-23 Hitachi Chem Co Ltd ダイシングダイボンドシート
JP2007002173A (ja) * 2005-06-27 2007-01-11 Hitachi Chem Co Ltd 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置
JP2007268846A (ja) * 2006-03-31 2007-10-18 Lintec Corp 剥離シートおよびその製造方法
JP2007288170A (ja) * 2006-03-20 2007-11-01 Hitachi Chem Co Ltd ダイボンドダイシングシート
JP2009188323A (ja) * 2008-02-08 2009-08-20 Furukawa Electric Co Ltd:The ウエハ加工用テープ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100938745B1 (ko) * 2007-11-28 2010-01-26 제일모직주식회사 고비점 용매 및 저비점 용매를 포함하는 반도체 다이접착제 조성물 및 이에 의한 접착필름
WO2009099191A1 (ja) * 2008-02-07 2009-08-13 Sumitomo Bakelite Company Limited 半導体用フィルム、半導体装置の製造方法および半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06108015A (ja) * 1992-09-30 1994-04-19 Hitachi Chem Co Ltd エポキシ接着フィルムの製造方法
JPH10264331A (ja) * 1997-03-26 1998-10-06 Oji Paper Co Ltd 剥離紙
JP2005136307A (ja) * 2003-10-31 2005-05-26 Lintec Corp 貼合装置
JP2005162818A (ja) * 2003-12-01 2005-06-23 Hitachi Chem Co Ltd ダイシングダイボンドシート
JP2007002173A (ja) * 2005-06-27 2007-01-11 Hitachi Chem Co Ltd 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置
JP2007288170A (ja) * 2006-03-20 2007-11-01 Hitachi Chem Co Ltd ダイボンドダイシングシート
JP2007268846A (ja) * 2006-03-31 2007-10-18 Lintec Corp 剥離シートおよびその製造方法
JP2009188323A (ja) * 2008-02-08 2009-08-20 Furukawa Electric Co Ltd:The ウエハ加工用テープ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015146254A1 (ja) * 2014-03-26 2015-10-01 リンテック株式会社 樹脂膜形成用シート積層体
JPWO2015146254A1 (ja) * 2014-03-26 2017-04-13 リンテック株式会社 樹脂膜形成用シート積層体
TWI651205B (zh) * 2014-03-26 2019-02-21 琳得科股份有限公司 樹脂膜形成用薄片層積體
EP3098277A1 (en) * 2015-05-27 2016-11-30 Henkel AG & Co. KGaA Pre-cut film and a production method thereof
WO2016188646A1 (en) * 2015-05-27 2016-12-01 Henkel Ag & Co. Kgaa Pre-cut film and a production method thereof
JP2021155680A (ja) * 2020-03-30 2021-10-07 リンテック株式会社 フィルム状接着剤
JP7446887B2 (ja) 2020-03-30 2024-03-11 リンテック株式会社 フィルム状接着剤

Also Published As

Publication number Publication date
CN103119112A (zh) 2013-05-22
KR20130129185A (ko) 2013-11-27

Similar Documents

Publication Publication Date Title
JP4876451B2 (ja) 接着シート
WO2015105002A1 (ja) 保護膜形成用複合シート
TW201923868A (zh) 黏晶膜、切晶黏晶膜及半導體裝置製造方法
JP4934730B2 (ja) ウエハ加工用テープ及びその製造方法
JP2013006929A (ja) 接着シート、接着シートの製造方法、接着シートロール、半導体装置の製造方法、及び半導体装置
JP5408571B2 (ja) ウエハ加工用テープ及びその製造方法
JP2008303386A (ja) 接着シート及びその製造方法並びに接着シートを用いた半導体装置の製造方法及び半導体装置
JP4999066B2 (ja) ウェハ加工用テープ
JP2009256458A (ja) 粘接着シート及び半導体装置の製造方法
JP2011228642A (ja) ウエハ加工用テープ
JP2010260897A (ja) 接着フィルム及びウエハ加工用テープ
WO2012056511A1 (ja) 接着フィルム及びウエハ加工用テープ
JP2008066688A (ja) ウェハ加工用テープ
JP2011199307A (ja) 半導体装置の製造方法
JP2012082285A (ja) 接着シート
JP5370416B2 (ja) 接着シート
JP5957795B2 (ja) 接着シートロール及び半導体装置
JP4785095B2 (ja) ウエハ加工用テープ
JP5453894B2 (ja) 接着シート
TWI445796B (zh) Followed by film and wafer processing tape
JP5370414B2 (ja) 接着シートの製造方法
JP4851573B2 (ja) シート状接着剤及びウエハ加工用テープ
JP2013001774A (ja) 接着シート及び半導体装置
JP2013159733A (ja) 接着シート及び半導体装置
JP5370415B2 (ja) 接着シート

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080069208.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10858902

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20137007759

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10858902

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP