WO2012029847A1 - Procédé de production d'une cellule photovoltaïque et procédé de production d'un module photovoltaïque - Google Patents

Procédé de production d'une cellule photovoltaïque et procédé de production d'un module photovoltaïque Download PDF

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Publication number
WO2012029847A1
WO2012029847A1 PCT/JP2011/069761 JP2011069761W WO2012029847A1 WO 2012029847 A1 WO2012029847 A1 WO 2012029847A1 JP 2011069761 W JP2011069761 W JP 2011069761W WO 2012029847 A1 WO2012029847 A1 WO 2012029847A1
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WIPO (PCT)
Prior art keywords
layer
resin
opening
forming
solar cell
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PCT/JP2011/069761
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English (en)
Japanese (ja)
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西田　豊三
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三洋電機株式会社
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Priority to JP2012531914A priority Critical patent/JP5958765B2/ja
Publication of WO2012029847A1 publication Critical patent/WO2012029847A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a method for manufacturing a solar battery cell and a method for manufacturing a solar battery module.
  • a plating method is known as a method for forming an electrode of a solar battery cell. With reference to FIG. 11, the formation method by the plating method of the electrode of the conventional photovoltaic cell is demonstrated.
  • a p-type substrate 101 having an n + layer 101a on the front surface side and a p + layer 101b on the back surface side is prepared.
  • an antireflection film 103 made of silicon nitride or the like having an opening 102 is formed on the surface of the substrate 101.
  • the opening 102 is provided to expose a region where an electrode is formed in a later process.
  • a mask layer 104 made of an oxide film or a photoresist film is formed on the entire surface of the antireflection film 103, and then the electrode 105 is electrolessly formed on the back surface of the substrate 101. It is formed by a plating method.
  • the mask layer 104 on the antireflection film 103 is removed.
  • an electrode 106 is formed on the surface of the substrate 101 exposed from the opening 102 on the antireflection film 103 by an electroless plating method.
  • the above-described method has a problem that the process of forming the opening 102 is complicated when the antireflection film 103 is an inorganic film such as silicon nitride.
  • the method for manufacturing a solar cell according to the present invention is a method for manufacturing a solar cell having an insulating layer having an opening formed on the surface of a semiconductor substrate and an electrode formed on the surface in the opening. Forming a resin layer on the surface using a resin having a predetermined viscosity reactive to light and heat, forming the opening in the resin layer, and using the resin layer, Forming the insulating layer having an opening, and forming the electrode on the surface in the opening by a plating method.
  • the method for manufacturing a solar cell module according to the present invention includes the steps of the method for manufacturing a solar cell described above.
  • an electrode of the solar cell can be easily formed by a plating method.
  • FIG. 1 (a) is a plan view of the front surface side of the solar battery cell according to the first embodiment of the present invention
  • FIG. 1 (b) is a plan view of the back side
  • FIG. 1 (c) is a plan view of FIG.
  • FIG. 4 is a cross-sectional view taken along line AA ′ in FIG. It is sectional drawing to which the part B enclosed with the broken line of FIG.1 (c) was expanded. It is the process figure which showed the manufacturing method of the photovoltaic cell concerning the 1st Embodiment of this invention. It is the process figure which showed the manufacturing method of the photovoltaic cell concerning the 1st Embodiment of this invention.
  • FIG.5 (a) is a back surface side top view of the photovoltaic cell concerning the 2nd Embodiment of this invention
  • FIG.5 (b) is a surface side top view
  • FIG. 6 is a cross-sectional view taken along the line A-A ′ of FIGS. It is the process figure which showed the manufacturing method of the photovoltaic cell concerning the 2nd Embodiment of this invention.
  • It is a top view of the solar cell module which concerns on one Embodiment of this invention.
  • FIG. 9 is a partial cross-sectional view along A-A ′ of FIG. 8. It is the process figure which showed the manufacturing method of the conventional photovoltaic cell.
  • FIGS. 1A is a plan view of the front surface side of the solar battery cell
  • FIG. 1B is a plan view of the back surface side
  • FIG. 1C is a cross-sectional view taken along line AA ′ in FIGS. 1A and 1B.
  • FIG. 2 is an enlarged cross-sectional view of a portion B surrounded by a broken line in FIG.
  • the solar cell 1 has an i-type amorphous silicon layer 3 having a thickness of 5 nm to 20 nm and a p-type amorphous silicon layer 4 having a thickness of 5 nm to 20 nm on a first main surface having a texture structure of an n-type single crystal silicon substrate 2.
  • the transparent conductive layer 5 having a thickness of 70 ⁇ m to 100 nm is formed in this order.
  • a transparent insulating layer 6 having a thickness of 10 to 30 ⁇ m is formed, which is a resin having an opening 6 a having a predetermined shape so that the transparent conductive film 5 as a base layer is exposed.
  • the insulating layer 6 is an acrylic resin, and its refractive index is 1.5 to 2.2.
  • a Ni layer having a thickness of 5 ⁇ m, a Cu layer having a thickness of 10 ⁇ m, and a Ni layer having a thickness of 2 ⁇ m were formed in this order by plating.
  • One electrode 7 is rounded so as to cover the periphery of the opening 6a.
  • the first electrode 7 is integrally composed of a plurality of finger electrodes 7a arranged in parallel to each other and two bus bar electrodes 7b, 7b arranged in parallel to each other.
  • the plurality of finger electrodes 7a Are arranged orthogonally to the two bus bar electrodes 7b.
  • the finger electrodes 7a are linear with a thickness of 40 ⁇ m and a width of 50 ⁇ m, respectively, and are arranged at intervals of 2 mm, and the bus bar electrodes 7b are linear with a thickness of 40 ⁇ m and a width of 1 mm, respectively.
  • a transparent conductive layer 10 having a thickness of ⁇ 100 nm is formed in this order.
  • a transparent insulating layer 11 having a thickness of 20 ⁇ m is formed, which is a resin having an opening 11 a having a predetermined shape so that the transparent conductive film layer 10 that is a base layer is exposed.
  • the insulating layer 11 is made of an acrylic resin and has a refractive index of 1.5 to 2.2.
  • a Ni layer having a thickness of 5 ⁇ m, a Cu layer having a thickness of 10 ⁇ m, and a Ni layer having a thickness of 2 ⁇ m were formed in this order by plating.
  • the second electrode 12 is rounded so as to cover the periphery of the opening 11a.
  • the second electrode 12 is integrally composed of a plurality of finger electrodes 12a arranged in parallel to each other and two bus bar electrodes 12b arranged in parallel to each other.
  • the bus bar electrodes 12b are arranged orthogonally.
  • the finger electrodes 12a are linear with a thickness of 40 ⁇ m and a width of 50 ⁇ m, respectively, and are arranged at intervals of 2 mm
  • the bus bar electrodes 12b are linear with a thickness of 40 ⁇ m and a width of 50 mm, respectively.
  • the texture structure is a random texture structure, and a large number of pyramid shapes are irregularly arranged.
  • the pyramid shape has irregular heights (sizes), and adjacent pyramids are not identical. There may be overlapping.
  • the top of each pyramid-shaped convex part and the valley bottom part of the recessed part between each pyramid may be rounded.
  • the insulating layers 6 and 11 each function as a protective layer, and also function as a mask layer when forming the first and second electrodes 7 and 12.
  • the insulating layers 6 and 11 are formed so as to cover the unevenness of the texture structure and the surface is flattened from the unevenness, and also function as a flattening layer.
  • the substrate 2 is, for example, a substantially square of about 125 mm square, a thickness of 100 ⁇ m to 300 ⁇ m, and the maximum height difference of the unevenness constituting the texture structure (the height of the highest point of the convex portion on the surface and the lowest point of the concave portion Difference t1 has, for example, about 20 ⁇ m.
  • Each of the insulating layers 6 and 11 has a maximum height difference of the surface (the difference in height between the uppermost point of the convex portion on the surface and the lowermost point of the concave portion) t2 of 1 ⁇ m or less, and the maximum height difference (the surface height) of the texture structure.
  • the difference in height between the uppermost point of the convex part and the lowermost point of the concave part) is smaller than t1, and is formed smoothly.
  • the contact resistance is lowered.
  • the electrodes 7 and 12 are formed on the insulating layers 6 and 11 so as to cover the periphery of the openings 6a and 11a on the transparent conductive film layers 5 and 10 exposed in the openings 6a and 11a. Further, impurities such as moisture can be prevented from entering the solar battery cell 1 through the openings 6a and 11a.
  • an n-type single crystal silicon substrate 2 is prepared, and a random texture structure is formed on the entire surface of the substrate 2 by wet etching using an etching solution made of an aqueous NaOH solution.
  • An n-type single crystal silicon substrate 2 having first and second main surfaces is prepared.
  • the i-type amorphous silicon layer 3 and the p-type amorphous are formed on the first main surface having the texture structure of the substrate 2 by CVD (chemical vapor deposition) or the like.
  • the silicon layer 4 is formed in this order, and the i-type amorphous silicon layer 8 and the n-type amorphous silicon layer 9 are formed in this order on the second main surface having the texture structure of the substrate 2.
  • a transparent conductive film layer 5 made of ITO (indium oxide) containing, for example, Sn (tin) is formed over the entire upper surface of the p-type amorphous silicon layer 4 by sputtering or ion plating, and n-type.
  • a transparent conductive film layer 10 made of, for example, ITO (indium oxide) containing Sn (tin) is formed over the entire upper surface of the amorphous silicon layer 9.
  • the resin layer 6 is formed on the entire upper surface of the transparent conductive film 5 by using a photocurable resin having a predetermined viscosity by a spin coating method, a spray method, a dipping method, or the like.
  • the resin layer 6 is formed on the entire surface of the transparent conductive film layer 5 by using a resin such as a fluid liquid acrylic resin as a photocurable resin having a predetermined viscosity.
  • a photomask M for selectively irradiating a predetermined portion on the resin layer 6 is provided with a resin layer.
  • the resin layer 6 is irradiated with, for example, UV light (ultraviolet rays) having a wavelength of 3000 nm or less in a state of being separated from 6 by 10 to 15 ⁇ m.
  • UV light ultraviolet light
  • the resin layer 6 in a portion irradiated with UV light (ultraviolet light) is cured, and the resin layer 6 in a portion not irradiated is not cured.
  • the resin layer 6 is developed with an organic solvent such as acetone or pyrrolidone to remove the portion of the resin layer 6 that is not irradiated with UV light (ultraviolet rays), and the opening 6a is formed.
  • an organic solvent such as acetone or pyrrolidone to remove the portion of the resin layer 6 that is not irradiated with UV light (ultraviolet rays), and the opening 6a is formed.
  • a transparent insulating layer 6 is formed.
  • the insulating layer 6 fills the concave portion of the transparent conductive film layer 5 corresponding to the texture structure of the substrate 2, while the maximum height difference of the surface (the height difference between the highest point of the convex portion on the surface and the lowest point of the concave portion).
  • (Difference) t2 is formed so as to be smaller than the height difference of the unevenness of the texture structure (the height difference between the highest point of the convex portion on the surface and the lowest point of the concave portion) t1.
  • the resin layer 11 is formed by spin coating, spraying, dipping, or the like using a photocurable resin having a predetermined viscosity over the entire upper surface of the transparent conductive film layer 10.
  • the resin layer 11 is formed on the entire surface of the transparent conductive layer 10 by using a resin such as a liquid acrylic resin having fluidity as the photocurable resin having a predetermined viscosity.
  • a photomask M for irradiating a predetermined portion on the resin layer 11 is applied to the resin layer 11 by 10 to 15 ⁇ m.
  • the resin layer 11 is irradiated with UV light (ultraviolet rays) having a wavelength of 300 nm or less.
  • UV light ultraviolet light
  • a portion of the resin layer 11 irradiated with UV light is cured, and a portion of the resin layer 11 that is not irradiated is not cured.
  • the resin layer 11 is developed with an organic solvent such as acetone or pyrrolidone to remove the non-irradiated portion of the resin layer 11, and a transparent insulating layer having an opening 11a. 11 is formed.
  • an organic solvent such as acetone or pyrrolidone
  • the insulating layer 11 has a maximum height difference on the surface so as to fill the concave portion of the transparent conductive film layer 10 corresponding to the texture structure of the substrate 2 (the height difference between the highest point of the convex portion on the surface and the lowest point of the concave portion).
  • t2 is formed to be smaller than the height difference of the unevenness of the texture structure (the height difference between the highest point of the convex portion on the surface and the lowest point of the concave portion) t1.
  • the transparent conductive film layers 5 and 10 exposed in the openings 6a and 11a are masked using the insulating layer 6 having the openings 6a and the insulating layer 11 having the openings 11a as a mask. Electrodes 7 and 12 are formed on each of them by plating to complete the solar battery cell 1 shown in FIG.
  • the electrodes 7 and 12 are formed by forming an Ni layer with a thickness of 5 ⁇ m as a first layer by electrolytic plating, forming a Cu layer with a thickness of 10 ⁇ m as a second layer, and forming a Ni layer with a thickness of 2 ⁇ m as a third layer.
  • the three-layer structure of Ni / Cu / Ni is formed and rounded so as to cover the periphery of the openings 6a and 11a on the transparent conductive film layers 5 and 10 exposed at the openings 6a and 11a.
  • the transparent insulating layer 6 having the opening 6a and the transparent insulating layer 11 having the opening 11a are formed by using a resin, and thus the film is formed by sputtering or CVD. It is easy to increase the thickness compared to the inorganic film, and the insulating layers 6 and 11 are smooth while filling the recesses so as to cover the unevenness of the texture structure and to flatten the surface from the unevenness. Can be formed.
  • the electrodes 7 and 12 are formed by the electrolytic plating method, the electric field concentration due to the convex and concave portions of the texture structure can be dispersed, and unwanted portions on the insulating layers 6 and 11 on the convex portions can be dispersed. It can suppress being plated. As a result, the electrodes 7 and 12 can be formed with good selectivity on the transparent conductive film layers 5 and 10 exposed in the openings 6a and 11a, respectively.
  • the transparent insulating layer 6 having the opening 6a and the transparent insulating layer 11 having the opening 11a function as a mask layer when the electrodes 7 and 12 are formed. 1 also functions as a protective layer.
  • one layer of the plating electrodes 7 and 12 has a three-layer structure of Ni / Cu / Ni to prevent Cu migration.
  • Ag, Sn or the like can be used as appropriate in place of Ni, and plated electrodes 7 and 12 having a two-layer structure of Ag / Cu can also be used.
  • the insulating layers 6 and 11 are transparent, the first main surface side that is the light incident surface of the solar battery cell 1 and the second main surface side that is opposite to the light incident surface of the solar battery cell 1 are provided. Light is easy to enter. (Second Embodiment)
  • the manufacturing method of the photovoltaic cell according to the second embodiment of the present invention will be described in detail with reference to the drawings.
  • FIGS. 5A is a plan view of the back surface side of the solar battery cell 15
  • FIG. 5B is a plan view of the front surface side of the solar battery cell 15
  • FIG. 6 is taken along AA ′ of FIGS. 5A and 5B. It is an expanded sectional view of the photovoltaic cell 15 along.
  • the solar cell 15 has a passivation layer 30 made of a silicon nitride layer formed on the first main surface on the light incident surface side having the texture structure of the n-type single crystal silicon substrate 20.
  • a transparent conductive film layer 50 is formed on the second main surface opposite to the light incident surface of the solar battery cell 15.
  • a transparent insulating layer 60 made of a resin having an opening 60a and having a thickness of 10 to 30 ⁇ m is formed.
  • the insulating layer 60 is made of an acrylic resin and has a refractive index of 1.5 to 2.2.
  • a p-type region 70 and an n-type region 80 having a predetermined shape are formed in a comb shape.
  • the p-type regions 70 and the n-type regions 80 are alternately arranged along the direction X perpendicular to the direction Y.
  • an n-type single crystal silicon substrate 20 is prepared, and an n-type single crystal silicon structure in which a random texture structure is formed by wet etching with an etchant made of an aqueous NaOH solution only on the entire first main surface of the substrate 20.
  • a crystalline silicon substrate 2 is prepared.
  • a passivation layer 30 made of a silicon nitride layer is formed on the first main surface of the n-type single crystal silicon substrate 20 by a CVD method or the like.
  • BSG boron silicate glass
  • a transparent conductive film layer made of ITO (indium oxide) containing, for example, Sn (tin) is formed on the entire upper surfaces of the p-type region 70 and the n-type region 80 through a metal mask by sputtering or ion plating. 50 is formed.
  • the transparent conductive film layer 50 is not formed except on the entire upper surface of the p-type region 70 and the n-type region 80.
  • a resin layer 60 is formed on the entire area of the second main surface of the n-type single crystal silicon substrate 20 by using a photocurable resin having a predetermined viscosity by a spin coating method, a spray method, a dipping method, or the like.
  • a resin such as a liquid acrylic resin having fluidity as a photocurable resin having a predetermined viscosity
  • the resin layer 60 is entirely on the second main surface of the n-type single crystal silicon substrate 20. Are formed almost uniformly.
  • a photomask M for irradiating a predetermined portion on the resin layer 60 is applied to the resin layer 60 by 10 to 15 ⁇ m.
  • the resin layer 60 is irradiated with UV light (ultraviolet rays) having a wavelength of 300 nm or less.
  • UV light ultraviolet light
  • the resin layer 60 in a portion irradiated with UV light (ultraviolet rays) is cured, and the resin layer 60 in a portion not irradiated is not cured.
  • the resin layer 60 is developed with an organic solvent such as acetone or pyrrolidone to remove the unirradiated portion of the resin layer 60, and a transparent insulating layer having an opening 60a. 60 is formed.
  • an organic solvent such as acetone or pyrrolidone
  • electrodes 70a and 80a are formed by plating on the transparent conductive film 50 exposed in the opening 60a using the insulating layer 60 having the opening 60a as a mask. , 6 is completed.
  • the electrodes 70a and 80a are formed by forming an Ni layer with a thickness of 5 ⁇ m as a first layer, a Cu layer with a thickness of 10 ⁇ m as a second layer, and a Ni layer with a thickness of 2 ⁇ m as a third layer by electrolytic plating.
  • electrodes 70a and 80a having a three-layer structure of Ni / Cu / Ni are formed.
  • the electrodes 70a and 80a are rounded so as to cover the periphery of the opening 60a on the transparent conductive film layer 50 exposed in the opening 60a.
  • the transparent insulating layer 60 having the opening 60a is formed using a resin, the thickness is increased as compared with an inorganic film formed by sputtering or CVD. Is easy.
  • the transparent insulating layer 60 having the opening 60a functions as a mask layer when forming the electrodes 70a and 80a, and also functions as a protective layer of the solar battery cell 15.
  • Ni contained in the electrodes 70a and 80a has a three-layer structure of Ni / Cu / Ni in order to prevent Cu migration.
  • Ag, Sn or the like can be used as appropriate instead of Ni, and it is also possible to use Ag / Cu double-layered electrodes 70a and 80a.
  • the insulating layer 60 is transparent, light is likely to enter the second main surface side that is opposite to the light incident surface of the solar battery cell 15.
  • the texture structure is formed only on the first main surface on the light incident surface side of the n-type single crystal silicon substrate 20, but on the second main surface opposite to the light incident surface.
  • a texture structure may be formed.
  • a solar cell module 100 according to an embodiment of the present invention will be described with reference to FIGS.
  • Reference numeral 100 denotes a solar battery module 100 including the solar battery cell 1 according to an embodiment of the present invention.
  • the solar battery module 100 is made of a transparent surface side cover 11 such as white plate reinforced glass, polyethylene terephthalate (PET), or the like.
  • a plurality of solar cells 1 are covered with a solder layer such as Sn—Ag—Cu or Sn—Pb between a weather-resistant back cover 12 made of a resin film, and between the front cover 11 and the back cover 12.
  • a linear solar cell group 14 electrically connected in series by a strip-like (band-like) conductive connecting member 13 made of a flat copper wire or the like formed through a filler 15 such as ethylene vinyl acetate (EVA). It is comprised from the plate-shaped structure body which is arrange
  • a strip-like (band-like) conductive connecting member 13 made of a flat copper wire or the like formed through a filler 15 such as ethylene vinyl acetate (EVA). It is comprised from the plate-shaped structure body which is arrange
  • the solar cell groups 14 are arranged in parallel with each other, and the conductive connecting member 13 on one end side of a predetermined adjacent solar cell group 14 is a solder layer so that all the solar cell groups 14 are electrically connected in series. Is connected by soldering with a strip-like conductive connecting member 17 made of a flat copper wire or the like, and the conductive connecting member 13 on the other end side of another predetermined adjacent solar cell group 14 is a solder layer. Solder-connected to L-shaped conductive connecting members 18 and 19 made of a flat copper wire or the like whose surface is coated. With this configuration, the plurality of solar cells 1 of the solar cell module 100 are arranged in a matrix.
  • connection member 13 of the outermost solar cell 1 on the power extraction side in the outermost solar cell group 14 is a flat copper whose surface is coated with a solder layer for extracting an electric output from the solar cell module 100.
  • L-shaped connection members (output extraction connection members) 20 and 21 made of wires or the like are connected by soldering.
  • an insulating member such as an insulating sheet such as polyethylene terephthalate (PET) is interposed.
  • the tip side portions of the L-shaped connecting members 18, 19, 20, 21 are centered on the back side upper side of the solar cell module 100 through notches (not shown) of the back side cover 12. It is led into the terminal box 22 located. In the terminal box 22, between the L-shaped connecting member 20 and the L-shaped connecting member 18, between the L-shaped connecting member 18 and the L-shaped connecting member 19, and the L-shaped connecting member 19. And an L-shaped connecting member 21 are connected by a bypass diode (not shown).
  • the conductive connection member 13 is solder-connected on the bus bar electrode 7b of one solar battery cell 1 of adjacent solar battery cells 1 and the bus bar electrode 12b of the other solar battery cell 1, thereby producing a solar battery group 14. To do.
  • the front side cover 11 and filling The sealing sheet to be a material, the structure, the sealing sheet to be a filler, and the back surface side cover 12 are laminated in this order, and thermocompression bonded at 150 ° C. for 10 minutes in a vacuum state. Then, the said filler is hardened completely by heating at 150 degreeC for 1 hour.
  • the maximum height difference (the height difference between the highest point of the convex portion on the surface and the lowest point of the concave portion) t2 of the insulating layers 6 and 11 is set to the maximum height difference of the unevenness of the texture structure.
  • the difference (the difference in height between the uppermost point of the convex portion on the surface and the lowermost point of the concave portion) is smaller than t1 and is formed smoothly, so that the stress at the time of connecting the conductive connecting member 13 is relieved and cell cracking occurs. To prevent.
  • the insulating layers 6 and 11 remaining as the protective layer are transparent, the insulating layers 6 and 11 have a refractive index in the range of 1.5 to 2.2 and are translucent, and the refractive index of the filler. Thus, the incident light is efficiently confined and the output is improved.
  • the solar battery module of the present embodiment is configured by the configuration of the solar battery module through the filler on the second main surface opposite to the light incident surface. The same effect as 100 is produced.
  • liquid acrylic resin is used as the insulating layer made of resin
  • an epoxy resin, a urethane resin, or the like can be appropriately used as long as it is a light-transmitting, liquid, or similar photo-curing resin.
  • the insulating layer is irradiated with UV light only once to be cured, but the insulating layer can be irradiated twice or more.
  • the resin layers 6, 11, 60 can be patterned in advance using offset printing. In that case, the resin layers 6, 11, 60 are cured by light or heat.
  • the electrodes 7, 12, 70a and 80a are formed by the electrolytic plating method, but may be formed by the electroless plating method.
  • the present invention is not limited to the structure of the solar battery cell, and can be appropriately used for various solar battery cells such as a polycrystalline solar battery cell.
  • the solar cell module of the present invention is not limited to the above-described embodiments, and for example, may be configured without a frame.
  • the solar cell module of the present invention may be a double-sided light-receiving solar cell module.
  • both the front side cover and the back side cover may be glass plates.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de production d'une cellule photovoltaïque et un procédé de production d'un module photovoltaïque qui permettent de former facilement des électrodes de cellule photovoltaïque par un procédé de placage. L'invention concerne spécifiquement un procédé de production d'une cellule photovoltaïque (1) comportant une couche isolante (6) avec une ouverture (6A) formée sur une surface d'un substrat semi-conducteur (2), et une électrode (7) formée sur la surface dans l'ouverture (6A), ledit procédé consistant à : former une couche de résine (6) sur la surface en utilisant une résine de viscosité prédéterminée réactive à la lumière et à la chaleur; former l'ouverture (6A) dans la couche de résine (6); former la couche isolante (6) avec l'ouverture (6A) en utilisant la couche de résine (6); et former l'électrode (7) sur la surface dans l'ouverture (6A) par un procédé de placage.
PCT/JP2011/069761 2010-08-31 2011-08-31 Procédé de production d'une cellule photovoltaïque et procédé de production d'un module photovoltaïque WO2012029847A1 (fr)

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WO2013018395A1 (fr) * 2011-07-29 2013-02-07 三洋電機株式会社 Module de puissance photovoltaïque
JP2013211385A (ja) * 2012-03-30 2013-10-10 Sanyo Electric Co Ltd 太陽電池及びその製造方法
WO2014029836A3 (fr) * 2012-08-23 2014-04-17 Commissariat à l'énergie atomique et aux énergies alternatives Procédé de réalisation de contacts électriques d'un dispositif semi-conducteur tel qu'une cellule photovoltaïque comprenant des étapes de gravure laser et de gravure humide de couches diélectriques
JP2014103259A (ja) * 2012-11-20 2014-06-05 Mitsubishi Electric Corp 太陽電池、太陽電池モジュールおよびその製造方法
JP2014107403A (ja) * 2012-11-27 2014-06-09 Kaneka Corp 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP2014123587A (ja) * 2012-12-20 2014-07-03 Kaneka Corp 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP2015056461A (ja) * 2013-09-11 2015-03-23 三菱電機株式会社 太陽電池モジュールの製造方法及び太陽電池モジュール
WO2015050163A1 (fr) * 2013-10-04 2015-04-09 長州産業株式会社 Élément photovoltaïque
EP2765615A4 (fr) * 2012-04-25 2015-07-22 Kaneka Corp Cellule solaire, son procédé de fabrication et module de cellule solaire
CN104854707A (zh) * 2013-05-29 2015-08-19 株式会社钟化 太阳能电池及其制造方法和太阳能电池模块及其制造方法
WO2015146333A1 (fr) * 2014-03-25 2015-10-01 シャープ株式会社 Convertisseur photoélectrique
KR101619831B1 (ko) 2014-12-17 2016-05-11 한국에너지기술연구원 태양 전지 및 이의 제조 방법
JPWO2016068051A1 (ja) * 2014-10-31 2017-08-31 シャープ株式会社 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム
WO2018181499A1 (fr) * 2017-03-31 2018-10-04 株式会社カネカ Élément de conversion photoélectrique et son procédé de fabrication
CN109791954A (zh) * 2016-09-23 2019-05-21 石原化学株式会社 太阳能电池单元的制造方法
CN109804474A (zh) * 2016-09-23 2019-05-24 石原化学株式会社 太阳能电池单元的制造方法
WO2019188133A1 (fr) * 2018-03-30 2019-10-03 株式会社カネカ Cellule solaire, module de cellule solaire et procédé de fabrication de cellule solaire
US10566470B2 (en) 2015-01-07 2020-02-18 Kaneka Corporation Solar cell, method for manufacturing same and solar cell module

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JP2013030659A (ja) * 2011-07-29 2013-02-07 Sanyo Electric Co Ltd 光起電力モジュール
WO2013018395A1 (fr) * 2011-07-29 2013-02-07 三洋電機株式会社 Module de puissance photovoltaïque
JP2013211385A (ja) * 2012-03-30 2013-10-10 Sanyo Electric Co Ltd 太陽電池及びその製造方法
EP2765615A4 (fr) * 2012-04-25 2015-07-22 Kaneka Corp Cellule solaire, son procédé de fabrication et module de cellule solaire
US9722101B2 (en) 2012-04-25 2017-08-01 Kaneka Corporation Solar cell, solar cell manufacturing method, and solar cell module
WO2014029836A3 (fr) * 2012-08-23 2014-04-17 Commissariat à l'énergie atomique et aux énergies alternatives Procédé de réalisation de contacts électriques d'un dispositif semi-conducteur tel qu'une cellule photovoltaïque comprenant des étapes de gravure laser et de gravure humide de couches diélectriques
JP2014103259A (ja) * 2012-11-20 2014-06-05 Mitsubishi Electric Corp 太陽電池、太陽電池モジュールおよびその製造方法
JP2014107403A (ja) * 2012-11-27 2014-06-09 Kaneka Corp 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP2014123587A (ja) * 2012-12-20 2014-07-03 Kaneka Corp 太陽電池およびその製造方法、ならびに太陽電池モジュール
CN104854707A (zh) * 2013-05-29 2015-08-19 株式会社钟化 太阳能电池及其制造方法和太阳能电池模块及其制造方法
EP2999005A4 (fr) * 2013-05-29 2016-04-20 Kaneka Corp Cellule solaire ainsi que procédé de fabrication de celle-ci, et module de cellules solaires ainsi que procédé de fabrication de celui-ci
US9780235B2 (en) 2013-05-29 2017-10-03 Kaneka Corporation Solar cell, manufacturing method therefor, solar cell module, and manufacturing method therefor
JP2015056461A (ja) * 2013-09-11 2015-03-23 三菱電機株式会社 太陽電池モジュールの製造方法及び太陽電池モジュール
JP2015073058A (ja) * 2013-10-04 2015-04-16 長州産業株式会社 光発電素子
WO2015050163A1 (fr) * 2013-10-04 2015-04-09 長州産業株式会社 Élément photovoltaïque
WO2015146333A1 (fr) * 2014-03-25 2015-10-01 シャープ株式会社 Convertisseur photoélectrique
US10411148B2 (en) 2014-03-25 2019-09-10 Sharp Kabushiki Kaisha Photoelectric conversion element
JPWO2016068051A1 (ja) * 2014-10-31 2017-08-31 シャープ株式会社 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム
KR101619831B1 (ko) 2014-12-17 2016-05-11 한국에너지기술연구원 태양 전지 및 이의 제조 방법
US10566470B2 (en) 2015-01-07 2020-02-18 Kaneka Corporation Solar cell, method for manufacturing same and solar cell module
US10998456B2 (en) 2015-01-07 2021-05-04 Kaneka Corporation Solar cell, method for manufacturing same and solar cell module
CN109791954A (zh) * 2016-09-23 2019-05-21 石原化学株式会社 太阳能电池单元的制造方法
CN109804474A (zh) * 2016-09-23 2019-05-24 石原化学株式会社 太阳能电池单元的制造方法
WO2018181499A1 (fr) * 2017-03-31 2018-10-04 株式会社カネカ Élément de conversion photoélectrique et son procédé de fabrication
JPWO2018181499A1 (ja) * 2017-03-31 2019-11-07 株式会社カネカ 光電変換素子及び光電変換素子の製造方法
WO2019188133A1 (fr) * 2018-03-30 2019-10-03 株式会社カネカ Cellule solaire, module de cellule solaire et procédé de fabrication de cellule solaire
JPWO2019188133A1 (ja) * 2018-03-30 2021-04-01 株式会社カネカ 太陽電池、太陽電池モジュール、及び太陽電池の製造方法

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