WO2012023818A2 - 연마 시스템용 연마 패드 - Google Patents
연마 시스템용 연마 패드 Download PDFInfo
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- WO2012023818A2 WO2012023818A2 PCT/KR2011/006088 KR2011006088W WO2012023818A2 WO 2012023818 A2 WO2012023818 A2 WO 2012023818A2 KR 2011006088 W KR2011006088 W KR 2011006088W WO 2012023818 A2 WO2012023818 A2 WO 2012023818A2
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- polishing
- flow path
- polishing pad
- region
- path pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Definitions
- the present invention relates to a polishing pad, and more particularly, to a polishing pad for a polishing system for polishing a glass plate used in a liquid crystal display.
- a glass plate glass substrate
- Such glass plate is manufactured by the fusion method or the float method. Almost all of the existing glass plates (about 95% or more) are produced by the float method.
- the glass (float glass) produced by the float method is shape
- the float glass is subjected to a polishing process to remove fine irregularities or impurities present on the surface thereof.
- the polishing process of the glass plate may be divided into a so-called 'Oscar' method for polishing individual glass plates one by one, and a so-called 'in-line' method for continuously polishing a series of glass plates.
- the conventional glass plate polishing method may be divided into 'single side polishing' for polishing only one surface of the glass plate and 'double side polishing' for polishing both sides of the glass plate.
- the glass plate polishing apparatus is supplied onto a polishing plate while rotating the lower unit while the polishing pad of the polishing plate (upper plate) is brought into contact with the glass plate while the glass plate is located in the lower unit (lower plate).
- the glass plate is polished using the polishing liquid.
- the polishing plate used in such a glass plate polishing apparatus is attached with a polishing pad for contacting the surface to be polished of the glass plate to polish the glass plate.
- FIG. 1 is a plan view schematically showing a polishing pad according to the prior art.
- the polishing pad 1 has a disk shape as a whole, and includes a central supply hole 2 provided at the center and six radial supply holes 3 disposed at a predetermined radius radius portion. Equipped.
- the supply holes 2 and 3 are for receiving the polishing liquid from the outside to the polishing surface side of the polishing pad 1.
- the polishing surface of the polishing pad 1 is provided with a flow path for evenly dispersing the polishing liquid supplied from the polishing liquid supply holes 2 and 3 to the entire polishing surface.
- Such a flow path has a flow path pattern of a straight form (square grating).
- the polishing pad 1 since the polishing pad 1 is rotated (clockwise or counterclockwise) in contact with a glass plate (not shown), the polishing liquid flowing through the flow path provided on the polishing surface of the polishing pad 1 is affected by the centrifugal force. Will receive. Therefore, in the polishing pad 1 according to the related art, the rotational direction of the polishing pad 1 does not coincide with the direction of the straight lattice flow path pattern of the polishing surface. This causes a nonuniformity or flow rate difference in the flow of the polishing liquid flowing through the flow path formed in the polishing pad 1. On the other hand, in the case of the conventional polishing pad 1 having such a flow path pattern, when the polishing rate is high or there are many polishing liquids supplied, a water film phenomenon may occur in the polishing process.
- Figure 2 is a graph measuring the velocity distribution of the polishing liquid flowing through the flow path of the polishing pad according to the prior art shown in FIG.
- the X axis of the graph is for indicating an arbitrary position of the polishing pad 1, which means the orientation indicated by the Roman letters in FIG. 1
- the Y axis represents the flow rate of the polishing liquid (kg / m < 2 > s).
- the speed deviation of the polishing liquid generated on the entire polishing surface of the polishing pad 1 is approximately 0.1 to 0.6 m / s, which is very large. That is, the flow rate difference of the polishing liquid was prominent near the edge of the polishing pad 1.
- the present invention has been conceived to solve the above problems, and by optimizing the flow path pattern formed on the polishing pad, the polishing pad for the polishing system having an improved structure so that the polishing liquid can be uniformly distributed over the entire polishing surface. It is the technical problem to provide.
- a polishing pad for a polishing system for achieving the above object, can be mounted to the polishing plate, the flow path predetermined to move the polishing liquid supplied from the polishing liquid supply on the polishing surface
- the flow path pattern is at least two types or more.
- the polishing pad according to the present embodiment as will be described later, that the flow path pattern provided on the polishing surface of the polishing pad includes different patterns other than the conventional linear grating pattern.
- the polishing pattern may include: a first flow path pattern formed in a first area including a center of the polishing pad; And a second flow path pattern formed in a second area partitioned to surround the first area in an outward direction from the center.
- the first flow path pattern may or may not be a conventional straight grating pattern.
- the second flow path pattern is a part which is more affected by the centrifugal force of the polishing pad, it is preferable that the second flow path pattern is configured as non-linear (eg, radial, curved, secondary curve, etc.), and the direction of the soft wave pad is Those skilled in the art will appreciate that the direction of rotation may be the same as or opposite to the direction of rotation.
- the second flow path pattern comprises: at least two circular flow paths arranged concentrically from the center and spaced apart from each other at predetermined intervals; And a plurality of radial flow paths arranged to extend radially from the center to intersect the circular flow paths.
- each spinning channel is provided to coincide with the centrifugal force direction of the polishing pad.
- each spinning flow path is preferably arranged in a straight line, but alternatively the spinning flow paths may comprise a non-linear to have an effect corresponding to the centrifugal force of the polishing pad. It is obvious.
- the second region includes an inner region disposed adjacent to the first region and an outer region disposed outside the inner region; In the second flow path pattern, the flow paths of the outer region are arranged more densely than the flow paths of the inner region.
- the flow passages in the inner region may be arranged more densely than the flow passages in the outer region.
- the second flow path pattern further comprises: a second radiation flow path formed between the radiation flow paths adjacent in the outer region. It is apparent to those skilled in the art that the second radial flow path is configured to more densely form the flow paths, and is not limited to a straight line but may be formed in a curved line.
- the polishing liquid supply unit comprises: a first supply unit for supplying the polishing liquid to the first region; And a second supply part for supplying the polishing liquid to the second area.
- the first supply unit comprises: a first hole penetrated to coincide with the center; And a straight supply path disposed across the first area so as to communicate with the first hole and the second supply part.
- the second supply may include: a plurality of second holes formed through a boundary line between the first area and the second area; A circular supply path provided on the boundary line so as to communicate with the second holes; And a curved radiant supply path formed to be radially outwardly curved from each of the second holes.
- the polishing pad is circular.
- the polishing pad preferably has a disk shape having a diameter of approximately 200 mm.
- the first flow path pattern includes a plurality of lattice flow paths substantially perpendicular to each other.
- each flow path is approximately 1 to 30 mm, and the spacing between neighboring flow paths is approximately 10 to 100 mm.
- the polishing pad is for polishing float glass produced by the float method.
- polishing pads can be applied to glass plates made by the fusion method, and other components that require precise polishing to maintain a predetermined flatness.
- the polishing pad for a polishing system forms a so-called radial flow path having a radial pattern in a direction substantially coincident with the direction of the centrifugal force due to the rotation of the polishing pad with respect to the center of the polishing surface. Differences or deviations in the flow rate of the flowing polishing liquid can be minimized. Therefore, it is possible to ensure uniformity of polishing and wide process range in the polishing process of the polishing system.
- the radial flow path pattern when the radial flow path pattern is formed, the occurrence of unnecessary water film phenomenon can be suppressed even when the polishing rate of the polishing system is relatively low or the supply amount of the polishing liquid is low.
- FIG. 1 is a plan view schematically showing a polishing pad according to the prior art.
- Figure 2 is a graph measuring the velocity distribution of the polishing liquid flowing through the flow path of the polishing pad according to the prior art shown in FIG.
- FIG. 3 is a view schematically showing the configuration of a glass plate polishing system in which a polishing pad according to a preferred exemplary embodiment of the present invention may be equipped.
- FIG. 4 is a plan view of a polishing pad according to a preferred exemplary embodiment of the present invention.
- FIG. 5 is an enlarged view of a portion A of FIG. 4.
- FIG. 6 is an enlarged view of a portion B of FIG. 4.
- FIG. 7 is a cross-sectional view taken along line 7-7 of FIG.
- FIG. 8 is a graph illustrating a result of measuring a flow rate variation of a polishing liquid appearing in a polishing pad according to an exemplary embodiment of the present invention illustrated in FIG. 4.
- FIG. 3 is a view schematically showing the configuration of a glass plate polishing system in which a polishing pad according to a preferred exemplary embodiment of the present invention may be equipped.
- the glass plate polishing system 100 for example, the flatness of a large glass plate (G) having one side of more than 1000mm, the thickness of about 0.3mm ⁇ 1.1mm It is for polishing the glass plate to keep the figure at the level required by the liquid crystal display.
- the polishing system 100 may include, for example, a lower unit 110 including a turntable 112 capable of rotating the glass plate G at a predetermined rotation speed while fixing the glass plate G, which is the object to be polished.
- the upper surface of the glass plate G which is installed on the upper side of the lower unit 110 and held in the lower unit 110, that is, the polishing pad 200, which is in contact with the surface to be polished, is attached and is movable in the horizontal and vertical directions.
- the unit 120 and the polishing liquid supply unit 130 for supplying the polishing liquid between the polishing surface of the polishing pad 200 and the polishing surface of the glass plate G are provided.
- the dimension (the smaller of horizontal or vertical lengths) of the glass plate G in the rectangular shape is determined by the upper unit 120 and / or the polishing pad attached thereto. Greater than the dimensions of the 200) (their diameter in the case of disc shape).
- the rotating shaft 114 of the lower unit 110 and the spindle 124 of the upper unit 120 are preferably not moved in a straight line, but relative to each other in an offset state with each other.
- the lower unit 110 is rotated while the polishing pad 200 is in contact with the surface to be polished of the glass plate G, and the upper unit 120 is in the horizontal direction.
- Reference numeral 140 denotes a carrier for supporting the glass plate G on the lower unit 110.
- the upper unit 120 and the polishing liquid supply unit 130 are incorporated herein by reference in their entirety, and each filed on March 6, 2009 by the applicant.
- Top unit and polishing liquid supply unit of 'Glass Plate Polishing System' of Korean Patent Application Nos. 10-2009-192290, 10-2009-192292, and 10-2009-192293, and 1, 2010 by the applicant Those skilled in the art will appreciate that the upper unit of 'Lower Unit for Glass Plate Polishing System and Polishing Method Using the Same' of Korean Patent Application No. 10-2010-0007100 filed on May 19 may be used.
- the glass plate G according to the present embodiment is manufactured by a float method, and refers to a so-called float glass in which ribbon-shaped glass molded to a predetermined thickness and width in a float bath is cut to a predetermined length.
- FIG. 4 is a plan view of a polishing pad according to an exemplary embodiment of the present invention
- FIG. 5 is an enlarged view of portion A of FIG. 4
- FIG. 6 is an enlarged view of portion B of FIG. 4
- FIG. 7 is FIG. 4. This is a cross-sectional view taken along lines 7-7 of.
- the polishing pad 200 has a polishing surface 202 installed at a lower end of the upper unit 120 of the polishing system 100 of FIG. 3 and in contact with the glass plate G. It is a disk structure having a diameter of about 200 mm.
- the polishing pad 200 includes two predetermined flow path patterns, that is, a first flow path pattern, for moving the polishing liquid supplied from the polishing liquid supply part 210 formed through the thickness direction on the polishing surface 202. 220 and the second flow path pattern 230.
- each flow path 201 is approximately 1 to 30 mm, and the distance D between neighboring flow paths 201 is approximately 10 to 100 mm.
- the polishing pad 200 includes a first region 204 including the center C and a second region 206 partitioned to surround the first region.
- the first flow path pattern 220 is formed in the first region 204
- the second flow path pattern 230 is provided in the second region 206.
- the second region 206 extends from the outside of the inner region 205 and the inner region 205 disposed adjacent to the first region 204 to the outermost portion of the polishing pad 200. It includes.
- the first flow path pattern 220 is a conventional straight grating pattern. That is, the first flow path pattern 220 is formed such that each of the flow paths 201 is substantially orthogonal to each other like the conventional polishing pad 1.
- the second flow path pattern 230 may include a plurality of circular flow paths 232 and circular flow paths 232 arranged concentrically from the center C and spaced apart from each other at predetermined intervals. It includes a plurality of radial flow paths 234 arranged to extend radially from the center (C) to intersect. Each spinning channel 234 is provided to match the centrifugal force direction of the polishing pad 200, and is disposed in a straight line shape.
- the radiation flow path 234 can be configured in a non-linear fashion.
- the pattern of the flow paths formed in the outer region 207 is disposed more densely than the pattern of the flow paths of the inner region 205.
- the flow paths of the inner region 205 may be arranged more densely than the flow paths of the outer region.
- the second flow path pattern 230 further includes a second radiation flow path 236 formed between adjacent radiation flow paths 234 in the outer region 207.
- the second spinning flow path 236 is for forming a more compact gap between the spinning flow paths 234.
- the second spinning channel 236 is not limited to straight lines but may be configured in a curved line.
- the second flow path pattern 230 is a portion which is further affected by the centrifugal force of the polishing pad 200, the second flow path pattern 230 is preferably configured to be non-linear (eg, radial, curved, secondary curve, etc.), The direction may be the same as or opposite to the rotation direction of the polishing pad 200.
- the polishing liquid supply unit 210 provided in the polishing pad 200 may include a first supply unit 212 for supplying the polishing liquid to the first region 204, and a second region ( A second supply portion 214 for supplying a polishing liquid to 206 is provided.
- the width of the polishing liquid supply unit 210 is preferably 10 to 20mm.
- the first supply part 212 communicates with the first hole 213 formed through the polishing pad 200 to coincide with the center C, and the first hole 213 and the second supply part 214 on the polishing surface. And a straight supply path 215 disposed across the first region 204.
- the second supply part 214 is disposed on the boundary line so as to communicate with the plurality of second holes 215 and the second holes 215 formed on the boundary line between the first area 204 and the second area 206.
- a circular supply path 217 provided, and a curved radiation supply path 219 formed to be outwardly radially curved from each second hole 215.
- the circular supply passage 217 is also responsible for separating and partitioning the first region 204 and the second region 206 from each other. To this end, the width of the circular supply passage 217 may be formed wider than the width of the other supply unit (210).
- the polishing pad 200 having the structure as described above may reduce the flow or flow rate variation of the polishing liquid as the radial flow path pattern is formed in a direction coinciding with the direction of the centrifugal force generated by the rotation.
- FIG. 5 is a graph showing a result of measuring a flow rate variation of a polishing liquid appearing in a polishing pad according to an exemplary embodiment of the present invention shown in FIG. 4.
- the X axis of the graph is for indicating an arbitrary position of the polishing pad 200, and means the orientation indicated by the Roman letters in FIG. 5, and the Y axis represents the flow rate (kg / m 2 s) of the polishing liquid.
- the polishing pad 200 causes a small variation in flow rate over its entire area. That is, the range of the speed deviation of the polishing liquid is 0.1 kPa to 0.6 kPa when the conventional polishing pad 200 is used, whereas the range of the speed deviation of the polishing liquid is 0.15 when the polishing pad 200 according to the present invention is used. m ⁇ s to 0.4 m ⁇ s, compared with the prior art. As described above, as the range of the speed deviation of the polishing liquid decreases, unnecessary water film phenomenon can be prevented, and the polishing flatness of the glass plate G can be ensured, as well as uniform at the edge of the polishing pad 200. One polishing can be achieved to ensure a wide range of processes.
- glass plate polishing system 110 lower unit
- polishing liquid supply part 212 first supply part
- first hole 214 second supply part
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
Claims (12)
- 연마 플레이트에 장착될 수 있으며, 연마액 공급부로부터 공급된 연마액을 연마면 상에서 이동시킬 수 있도록 미리 결정된 유로 패턴이 형성된 연마 패드에 있어서,상기 유로 패턴은 적어도 2종류 이상인 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제1항에 있어서,상기 연마 패턴은:상기 연마 패드의 중심을 포함하는 제1 영역에 형성된 제1 유로 패턴; 및상기 중심으로부터 외측 방향으로 상기 제1 영역을 둘러싸도록 구획된 제2 영역에 형성된 제2 유로 패턴을 구비하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제2항에 있어서,상기 제2 유로 패턴은:상기 중심으로부터 동심원적으로 배열되고 서로 미리 결정된 간격으로 이격되게 배치된 적어도 2개 이상의 원형 유로들; 및상기 원형 유로들을 교차할 수 있도록 상기 중심으로부터 방사상으로 연장되도록 배치된 다수의 방사 유로들을 포함하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제3항에 있어서,상기 각각의 방사 유로는 연마 패드의 원심력 방향과 일치되게 마련된 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제2항에 있어서,상기 제2 영역은 상기 제1 영역에 이웃되게 배치된 내부 영역 및 상기 내부 영역의 외측에 배치된 외부 영역을 포함하고;상기 제2 유로 패턴은 상기 외부 영역의 유로들이 상기 내부 영역의 유로들 보다 더 치밀하게 배치된 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제5항에 있어서,상기 제2 유로 패턴은:상기 외부 영역에서 이웃되는 상기 방사 유로들 사이에 형성된 제2 방사 유로를 더 포함하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제1항에 있어서,상기 연마액 공급부는:상기 제1 영역에 상기 연마액을 공급하기 위한 제1 공급부; 및상기 제2 영역에 상기 연마액을 공급하기 위한 제2 공급부를 구비하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제7항에 있어서,상기 제1 공급부는:상기 중심과 일치하도록 관통 형성된 제1 구멍; 및상기 제1 구멍과 상기 제2 공급부와 연통되도록 상기 제1 영역을 가로질러 배치된 직선 공급로를 포함하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제7항에 있어서,상기 제2 공급부는:상기 제1 영역과 상기 제2 영역의 경계선상에 관통 형성된 다수의 제2 구멍들;상기 제2 구멍들과 연통되게 상기 경계선상에 마련된 원형 공급로; 및각각의 상기 제2 구멍으로부터 외측 방사상으로 굴곡되게 형성된 굴곡 방사 공급로를 포함하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제1항에 있어서,상기 연마 패드는 원형인 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제2항에 있어서,상기 제1 유로 패턴은 서로 실질적으로 직교하는 다수의 격자형 유로들을 포함하는 것을 특징으로 하는 연마 시스템용 연마 패드.
- 제1항에 있어서,상기 유로의 폭은 대략 1 내지 30mm이고, 서로 이웃 하는 유로 사이의 간격은 대략 10 내지 100mm인 것을 특징으로 하는 연마 시스템용 연마 패드.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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CN201180039962.2A CN103079767B (zh) | 2010-08-18 | 2011-08-18 | 抛光系统的抛光垫 |
JP2013524796A JP5924596B2 (ja) | 2010-08-18 | 2011-08-18 | 研磨システム用研磨パッド |
EP11818418.3A EP2607019B1 (en) | 2010-08-18 | 2011-08-18 | Polishing pad for a polishing system |
US13/769,029 US8647178B2 (en) | 2010-08-18 | 2013-02-15 | Polishing pad of polishing system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020100079882A KR101232787B1 (ko) | 2010-08-18 | 2010-08-18 | 연마 시스템용 연마 패드 |
KR10-2010-0079882 | 2010-08-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/769,029 Continuation US8647178B2 (en) | 2010-08-18 | 2013-02-15 | Polishing pad of polishing system |
Publications (2)
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WO2012023818A2 true WO2012023818A2 (ko) | 2012-02-23 |
WO2012023818A3 WO2012023818A3 (ko) | 2012-05-10 |
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PCT/KR2011/006088 WO2012023818A2 (ko) | 2010-08-18 | 2011-08-18 | 연마 시스템용 연마 패드 |
Country Status (6)
Country | Link |
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US (1) | US8647178B2 (ko) |
EP (1) | EP2607019B1 (ko) |
JP (1) | JP5924596B2 (ko) |
KR (1) | KR101232787B1 (ko) |
CN (1) | CN103079767B (ko) |
WO (1) | WO2012023818A2 (ko) |
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CN103317430B (zh) * | 2013-05-22 | 2015-08-19 | 浙江工业大学 | 防碰撞悬浮抛光装置 |
CN105881246B (zh) * | 2014-12-19 | 2018-06-08 | 浙江金徕镀膜有限公司 | 基板处理装置 |
JP2017001111A (ja) * | 2015-06-05 | 2017-01-05 | 株式会社ディスコ | 研磨パッド及びcmp研磨方法 |
US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
CN106392820B (zh) * | 2016-09-27 | 2019-05-17 | 中国科学院上海光学精密机械研究所 | 一种环形抛光机 |
US10777418B2 (en) * | 2017-06-14 | 2020-09-15 | Rohm And Haas Electronic Materials Cmp Holdings, I | Biased pulse CMP groove pattern |
US10857647B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | High-rate CMP polishing method |
US10861702B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Controlled residence CMP polishing method |
US10857648B2 (en) * | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Trapezoidal CMP groove pattern |
US10586708B2 (en) | 2017-06-14 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Uniform CMP polishing method |
CN108747721B (zh) * | 2018-05-29 | 2019-11-01 | 江苏锡沂高新区科技发展有限公司 | 一种半导体晶圆半精磨、精磨设备 |
KR102256204B1 (ko) * | 2018-06-29 | 2021-05-26 | 주식회사 엘지화학 | 유리기판 연마 패드 |
KR102656242B1 (ko) * | 2019-04-16 | 2024-04-09 | 주식회사 엘지화학 | 화학기계연마용 연마패드 |
JPWO2020255744A1 (ko) * | 2019-06-19 | 2020-12-24 |
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2010
- 2010-08-18 KR KR1020100079882A patent/KR101232787B1/ko active IP Right Grant
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2011
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- 2011-08-18 JP JP2013524796A patent/JP5924596B2/ja active Active
- 2011-08-18 WO PCT/KR2011/006088 patent/WO2012023818A2/ko active Application Filing
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KR20100007100A (ko) | 2008-07-11 | 2010-01-22 | 삼성전자주식회사 | 바이오 키를 이용하여 VoIP을 기반으로 한 통신을수행하는 방법 및 장치 |
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JP2013535350A (ja) | 2013-09-12 |
EP2607019B1 (en) | 2020-01-08 |
CN103079767A (zh) | 2013-05-01 |
WO2012023818A3 (ko) | 2012-05-10 |
KR101232787B1 (ko) | 2013-02-13 |
KR20120017280A (ko) | 2012-02-28 |
CN103079767B (zh) | 2016-01-20 |
EP2607019A2 (en) | 2013-06-26 |
US20130196580A1 (en) | 2013-08-01 |
US8647178B2 (en) | 2014-02-11 |
EP2607019A4 (en) | 2017-08-16 |
JP5924596B2 (ja) | 2016-05-25 |
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