CN112768384A - 预热环及晶圆外延生长设备 - Google Patents
预热环及晶圆外延生长设备 Download PDFInfo
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- CN112768384A CN112768384A CN202110102200.8A CN202110102200A CN112768384A CN 112768384 A CN112768384 A CN 112768384A CN 202110102200 A CN202110102200 A CN 202110102200A CN 112768384 A CN112768384 A CN 112768384A
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- 239000007789 gas Substances 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000012495 reaction gas Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 26
- 230000003247 decreasing effect Effects 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110102200.8A CN112768384B (zh) | 2021-01-26 | 2021-01-26 | 预热环及晶圆外延生长设备 |
Applications Claiming Priority (1)
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CN202110102200.8A CN112768384B (zh) | 2021-01-26 | 2021-01-26 | 预热环及晶圆外延生长设备 |
Publications (2)
Publication Number | Publication Date |
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CN112768384A true CN112768384A (zh) | 2021-05-07 |
CN112768384B CN112768384B (zh) | 2024-02-27 |
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CN202110102200.8A Active CN112768384B (zh) | 2021-01-26 | 2021-01-26 | 预热环及晶圆外延生长设备 |
Country Status (1)
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CN (1) | CN112768384B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115584553A (zh) * | 2022-11-04 | 2023-01-10 | 西安奕斯伟材料科技有限公司 | 预热环及晶圆外延生长设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231641A (ja) * | 2001-01-31 | 2002-08-16 | Shin Etsu Handotai Co Ltd | 気相成長装置及びエピタキシャルウェーハの製造方法 |
US20150020734A1 (en) * | 2013-07-17 | 2015-01-22 | Applied Materials, Inc. | Structure for improved gas activation for cross-flow type thermal cvd chamber |
JP6330941B1 (ja) * | 2017-03-07 | 2018-05-30 | 株式会社Sumco | エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法 |
CN111211074A (zh) * | 2013-04-30 | 2020-05-29 | 应用材料公司 | 具有空间分布的气体通道的气流控制衬垫 |
CN111850515A (zh) * | 2020-07-02 | 2020-10-30 | 北京北方华创微电子装备有限公司 | 用于外延反应腔室的衬里装置及外延反应腔室 |
CN211879338U (zh) * | 2020-03-02 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 用于外延生长设备的预热环及外延生长设备 |
-
2021
- 2021-01-26 CN CN202110102200.8A patent/CN112768384B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231641A (ja) * | 2001-01-31 | 2002-08-16 | Shin Etsu Handotai Co Ltd | 気相成長装置及びエピタキシャルウェーハの製造方法 |
CN111211074A (zh) * | 2013-04-30 | 2020-05-29 | 应用材料公司 | 具有空间分布的气体通道的气流控制衬垫 |
US20150020734A1 (en) * | 2013-07-17 | 2015-01-22 | Applied Materials, Inc. | Structure for improved gas activation for cross-flow type thermal cvd chamber |
JP6330941B1 (ja) * | 2017-03-07 | 2018-05-30 | 株式会社Sumco | エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法 |
CN211879338U (zh) * | 2020-03-02 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 用于外延生长设备的预热环及外延生长设备 |
CN111850515A (zh) * | 2020-07-02 | 2020-10-30 | 北京北方华创微电子装备有限公司 | 用于外延反应腔室的衬里装置及外延反应腔室 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115584553A (zh) * | 2022-11-04 | 2023-01-10 | 西安奕斯伟材料科技有限公司 | 预热环及晶圆外延生长设备 |
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CN112768384B (zh) | 2024-02-27 |
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Effective date of registration: 20220620 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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