WO2012023246A1 - Boîtier de diode électroluminescente - Google Patents

Boîtier de diode électroluminescente Download PDF

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Publication number
WO2012023246A1
WO2012023246A1 PCT/JP2011/004301 JP2011004301W WO2012023246A1 WO 2012023246 A1 WO2012023246 A1 WO 2012023246A1 JP 2011004301 W JP2011004301 W JP 2011004301W WO 2012023246 A1 WO2012023246 A1 WO 2012023246A1
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WIPO (PCT)
Prior art keywords
frame
emitting diode
light emitting
diode package
terminals
Prior art date
Application number
PCT/JP2011/004301
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English (en)
Japanese (ja)
Inventor
目見田　裕一
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シャープ株式会社
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Publication of WO2012023246A1 publication Critical patent/WO2012023246A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

Definitions

  • the present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a light emitting diode chip and a pair of terminals for supplying power thereto.
  • a backlight using a light emitting diode that consumes less power than a backlight using a fluorescent tube such as CCFL (ColdCCathode Fluorescent Lamp).
  • LED light emitting diode
  • CCFL ColdCCathode Fluorescent Lamp
  • the backlight using the LED includes a plurality of LED packages each including an LED chip.
  • Each LED package includes an LED chip provided to emit light of a predetermined color to the outside, a pair of terminals provided to supply power to the LED chip from the outside, and the back surface of the LED chip
  • the reflector provided in the side and the transparent sealing part provided so that the surface of an LED chip might be covered are provided.
  • a light-emitting element housing in which the outermost surface of the plating layer deposited and deposited sequentially on the metallized metal layer formed on is a silver plating layer, and the silver plating layer has a predetermined crystal structure
  • a package is disclosed.
  • Patent Document 2 discloses a semiconductor package that has at least two parts bonded using an alloy filler, and the alloy filler is composed only of a solid solution of gold, silver, and copper dispersed in an atomic state in the filler. Is disclosed.
  • Patent Document 3 the insulating layer formed on the wafer provided with the electrode, the rewiring layer connected to the electrode and formed on the seed layer, and the wafer, the insulating layer, and the rewiring layer are sealed.
  • a semiconductor package including a sealing layer that stops, and at least a part of a side surface of each pattern wiring of the rewiring layer is covered with a seed layer made of a material having high migration resistance.
  • Patent Document 4 discloses a method for manufacturing an IC (Integrated Circuit) package in which the surface of a TAB (Tape Automated Bonding) carrier tape or a flexible printed circuit board is roughened before chip mounting.
  • TAB Tape Automated Bonding
  • a base metal serving as a ground electrode, a first ceramic layer provided with a ground conductive pattern for a microstrip line connected to the base metal, and an external circuit and a semiconductor chip are electrically connected.
  • the second ceramic layer provided with the line conductive pattern and the input / output lead terminal to be connected and the third ceramic layer provided with the ground conductive pattern connected to the base metal on the upper surface are sequentially laminated, and the input / output lead terminal and the base metal are laminated.
  • a package for a microwave device is disclosed in which are spaced apart from each other.
  • the present invention has been made in view of such points, and an object of the present invention is to easily suppress the occurrence of a short circuit between terminals due to ion migration.
  • the present invention provides a frame barrier between a pair of terminals.
  • a light emitting diode package includes a frame provided in a frame shape, a pair of terminals that are provided in the frame so as to be separated from each other in plan view, and can be connected to the outside, and the frame A light emitting diode chip provided in the frame and connected to the pair of terminals, and a light emitting diode provided in the frame of the frame and having a transparent sealing portion covering the light emitting diode chip and the pair of terminals.
  • the diode package, wherein the frame has a step formed between the pair of terminals so as to extend in a direction intersecting with a direction in which the pair of terminals are separated from each other. It has the part.
  • step difference with respect to the surface of a pair of terminal is provided between a pair of terminal connected in order to supply electric power to a light emitting diode chip, with respect to a light emitting diode chip Even if metal is deposited from one terminal to the other terminal side with the supply of electric power and ion migration occurs, the progress of the ion migration is blocked by the step formed in the barrier portion. Thereby, since a pair of terminal becomes difficult to short-circuit through the metal which precipitated by ion migration, generation
  • the frame having the barrier portion is easily formed, for example, by only partially changing the internal shape of the mold used for molding, so that occurrence of a short circuit between the terminals due to ion migration is easily suppressed.
  • the barrier part may be formed in a ridge.
  • the barrier portion is formed on the ridge, the progress of ion migration is specifically blocked by the side wall of the ridge.
  • the barrier portion may be formed in a concave line.
  • the barrier portion is formed in the groove, the progress of ion migration is specifically blocked by the sidewall of the groove.
  • the barrier portion may have a portion formed in a ridge and a portion formed in a ridge so as to be adjacent to the portion.
  • the barrier part since the barrier part has the part formed in the adjacent protruding item
  • the frame may be made of a white resin.
  • the frame is formed of white resin, the surface of the frame becomes white.
  • the surface of the frame on the light emitting diode chip side functions as a reflector.
  • the light emitting diode chip may be provided on one terminal of the pair of terminals.
  • the light-emitting diode chip is provided on one terminal, it is not necessary to separately provide a member for mounting the light-emitting diode chip, and the cost can be reduced.
  • the light emitting diode chip is placed on one terminal via a conductive adhesive, whereby the light emitting diode Since the chip and one terminal are connected, for example, the connection by wire bonding is only on the other terminal side, and the cost can be reduced.
  • the sealing part may be formed of a silicone resin.
  • the sealing portion is formed of a silicone resin, gas migration and moisture migration are likely to occur, but the ion migration progress is blocked by the barrier portion of the frame.
  • the effects of the present invention are effectively exhibited.
  • the sealing part is generally formed of a silicone resin having long-term reliability, discoloration and deterioration of the sealing part are suppressed.
  • the sealing portion may include a phosphor for converting light emitted from the photodiode chip into white light.
  • emitted with the light emitting diode chip into white light is contained in the sealing part, for example, yellow fluorescent substance is disperse
  • the white light is specifically emitted from the light emitting diode package by dispersing UV light and converting ultraviolet light into white light.
  • the frame barrier portion is provided between the pair of terminals, it is possible to easily suppress the occurrence of a short circuit between the terminals due to ion migration.
  • FIG. 1 is a top view of the LED package according to the first embodiment.
  • FIG. 2 is a bottom view of the LED package according to the first embodiment.
  • FIG. 3 is a cross-sectional view of the LED package taken along line III-III in FIG.
  • FIG. 4 is a cross-sectional view of the LED package taken along line IV-IV in FIG.
  • FIG. 5 is a cross-sectional view showing ion migration generated in the LED package according to the first embodiment.
  • FIG. 6 is a cross-sectional view of the LED package according to the second embodiment.
  • FIG. 7 is a cross-sectional view of the LED package according to the third embodiment.
  • FIG. 8 is a cross-sectional view of the LED package according to the fourth embodiment.
  • FIG. 9 is a cross-sectional view of the LED package according to the fifth embodiment.
  • Embodiment 1 of the Invention 1 to 5 show Embodiment 1 of an LED package according to the present invention.
  • FIGS. 1 and 2 are a top view and a bottom view of the LED package 10a of the present embodiment, respectively.
  • 3 and 4 are cross-sectional views of the LED package 10a taken along lines III-III and IV-IV in FIG. 1, respectively.
  • FIG. 5 is a cross-sectional view showing ion migration M generated in the LED package 10a.
  • the LED package 10a includes a frame 1a provided in a frame shape, and a positive electrode terminal 2a provided as a pair of terminals in the frame 1a so as to be separated from each other in plan view, and The LED chip 3a provided in the frame of the negative electrode terminal 2b and the frame 1a, and connected to the positive electrode terminal 2a and the negative electrode terminal 2b via the metal wires 4a and 4b, and the LED chip 3a provided in the frame of the frame 1a. 3a, and a transparent sealing portion 5 that covers the positive terminal 2a and the negative terminal 2b.
  • the frame 1 a is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side.
  • the connecting portion is formed lower than the outer frame portion, and has a protruding barrier portion 7a above the connecting portion.
  • the barrier portion 7a is provided so as to extend in a direction (vertical direction in FIG. 1) orthogonal to a direction (lateral direction in FIG. 1) in which the positive electrode terminal 2a and the negative electrode terminal 2b are separated from each other.
  • the surface of the negative electrode terminal 2b has a step (about 0.10 mm in the size exemplified below).
  • the size of the frame 1a is, for example, such that La in FIG.
  • the barrier portion 7a has an upper length of about 0.90 mm, a lower length of about 0.80 mm, and the cross-sectional shape is 0.
  • a trapezoid having an upper base of about 10 mm, a lower base of about 0.20 mm, and a height of about 0.10 mm.
  • the frame 1a is formed of, for example, a silicone-based thermosetting white resin, so that it functions as a reflector for reflecting light emitted from the LED chip 3a.
  • frame 1a although a thermosetting resin material is preferable, the thermoplastic resin material generally used for the package of a LED light-emitting device may be sufficient, for example.
  • the positive terminal 2a is fitted into the lower part of the relatively large frame of the frame 1a described above, and its lower surface is exposed from the frame 1a so that it can be connected to the outside. ing.
  • the negative electrode terminal 2b is fitted into the lower part of the relatively small frame of the frame 1a described above, and its lower surface is exposed from the frame 1a so that it can be connected to the outside. ing.
  • the positive electrode terminal 2a and the negative electrode terminal 2b include, for example, a metal substrate made of copper or the like, and a metal thin film such as nickel, palladium, silver, or gold coated on the surface of the metal substrate by plating. .
  • the LED chip 3a is fixed on the positive electrode terminal 2a via, for example, an insulating adhesive, and a positive electrode to which the positive electrode terminal 2a is connected on its upper surface, And a negative electrode to which the negative electrode terminal 2b is connected and configured to emit light of a predetermined color by supplying power to the chip body on which the compound semiconductor is laminated through the positive electrode and the negative electrode.
  • the metal wires 4a and 4b are formed of, for example, a gold wire.
  • the sealing part 5 is formed of, for example, a silicone resin and includes a phosphor 6 inside.
  • the phosphor 6 included in the sealing portion 5 is a yellow phosphor, or a red phosphor and a green phosphor, and the LED chip 3a emits ultraviolet light.
  • the phosphor 6 included in the sealing portion 5 is a red phosphor, a green phosphor, and a blue phosphor.
  • the LED package 10a having the above configuration supplies power to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10a as shown in FIG. 5, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7a of the frame 1a.
  • the surface of the positive electrode terminal 2a and the negative electrode terminal 2b is connected between the positive electrode terminal 2a and the negative electrode terminal 2b connected to supply power to the LED chip 3a.
  • the barrier portion 7a of the frame 1a having a step is provided, with the supply of power to the LED chip 3a, metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side, and ion migration M is generated.
  • the progress of the ion migration M can be blocked by the side wall of the barrier portion 7a.
  • the frame 1a having the barrier portion 7a is easily formed, for example, by only partially changing the internal shape of the mold used for molding, so that it is easy to generate a short circuit between the terminals due to the ion migration M. Can be suppressed.
  • the frame 1a is formed of white resin, the surface of the frame 1a becomes white. Thereby, since the light radiate
  • the LED chip 3a is provided on the positive electrode terminal 2a, it is not necessary to separately provide a member on which the LED chip 3a is placed, so that the cost can be reduced. it can.
  • the sealing portion 5 is formed of silicone resin, the ion migration M easily progresses while the ion migration M easily occurs through gas and moisture. Since it is interrupted by the barrier portion 7a of the frame 1a, it is possible to effectively suppress the occurrence of a short circuit between the terminals due to the ion migration M.
  • the sealing part 5 is generally formed of a silicone resin having long-term reliability, discoloration and deterioration of the sealing part 5 can be suppressed. .
  • FIG. 6 is a cross-sectional view of the LED package 10b of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the same portions as those in FIGS. 1 to 5 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the LED package 10a in which a part of the portion disposed between the positive electrode terminal and the negative electrode terminal of the frame is projected is illustrated.
  • the LED package 10a is disposed between the positive electrode terminal and the negative electrode terminal of the frame.
  • the LED package 10b from which the whole part protruded is illustrated.
  • the LED package 10b includes a frame 1b provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in the frame 1b so as to be separated from each other in plan view, and a frame 1b.
  • the LED chip 3a connected to the positive electrode terminal 2a and the negative electrode terminal 2b via the metal wires 4a and 4b, respectively, and the LED chip 3a, the positive electrode terminal 2a and the negative electrode provided in the frame 1b.
  • the transparent sealing part 5 which covers the terminal 2b is provided.
  • the frame 1 b is formed in an approximately 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof.
  • the portion is formed lower than the outer frame portion and protrudes from the positive electrode terminal 2a and the negative electrode terminal 2b.
  • the entire upper portion of the connecting portion is a barrier portion 7b, and other configurations are substantially the same as those of the frame 1a of the first embodiment.
  • the LED package 10b having the above configuration supplies power to the LED chip 3a through the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10b as shown in FIG. 6, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7b of the frame 1b.
  • the barrier portion 7b of the frame 1b is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first embodiment.
  • production of the short circuit between the terminals resulting from M can be suppressed easily.
  • FIG. 7 is a cross-sectional view of the LED package 10c of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the LED packages 10a and 10b including the frame in which the convex barrier portion is formed are illustrated.
  • the frame 1c in which the concave barrier portion is formed is provided.
  • the LED package 10c is illustrated.
  • the LED package 10c includes a frame 1c provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1c so as to be separated from each other in plan view, and a frame 1c.
  • LED chip 3a connected to positive electrode terminal 2a and negative electrode terminal 2b via metal wires 4a and 4b, respectively, and frame 1c, LED chip 3a, positive electrode terminal 2a and negative electrode
  • the transparent sealing part 5 which covers the terminal 2b is provided.
  • the frame 1 c is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof.
  • the portion is formed to be lower than the outer frame portion, has a concave barrier portion 7c at the upper portion of the connecting portion, and other configurations are substantially the same as the frame 1a of the first embodiment.
  • the LED package 10c having the above configuration supplies power to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10c as shown in FIG. 7, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7c of the frame 1c.
  • the barrier portion 7c of the frame 1c is provided between the positive terminal 2a and the negative terminal 2b as in the first and second embodiments.
  • production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
  • FIG. 8 is a cross-sectional view of the LED package 10d of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the LED packages 10a to 10c including the frame in which the protruding or recessed barrier portions are formed are exemplified. However, in the present embodiment, both the protruding and recessed barrier portions are provided. An LED package 10d including the formed frame 1d is illustrated.
  • the LED package 10d includes a frame 1d provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1d so as to be separated from each other in plan view, and a frame 1d.
  • LED chip 3a connected to the positive electrode terminal 2a and negative electrode terminal 2b via metal wires 4a and 4b, respectively, and a frame 1d provided to the LED chip 3a, positive electrode terminal 2a and negative electrode
  • the transparent sealing part 5 which covers the terminal 2b is provided.
  • the frame 1 d is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof.
  • the portion is formed lower than the outer frame portion, and has a barrier portion 7d having a portion 7da formed on the upper portion of the connecting portion and a portion 7db formed on the concave portion, and the other configuration is as described above. It is substantially the same as the frame 1a of the first embodiment.
  • the LED package 10d having the above configuration supplies fluorescent light to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and contains blue light or ultraviolet light emitted from the LED chip 3a in the sealing portion 5. By converting to white light through the body 6, white light is emitted to the outside.
  • the LED package 10d as shown in FIG. 8, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side walls of the portion 7da formed on the protrusions and the portion 7db formed on the recesses constituting the barrier portion 7d of the frame 1c.
  • the barrier portion 7d of the frame 1d is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first to third embodiments.
  • production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
  • FIG. 9 is a cross-sectional view of the LED package 10e of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the LED packages 10a to 10d including the LED chip having the positive electrode and the negative electrode formed on the upper surface are exemplified.
  • the LED chip having only the negative electrode formed on the upper surface is illustrated.
  • the LED package 10e includes a frame 1a provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1a so as to be separated from each other in plan view, and a frame 1a.
  • LED chip 3b connected to the positive electrode terminal 2a and the negative electrode terminal 2b via a conductive adhesive (not shown) and a metal wire 4b, and an LED chip provided in the frame 1a. 3b, and a transparent sealing portion 5 that covers the positive electrode terminal 2a and the negative electrode terminal 2b.
  • the LED chip 3b is fixed on the positive electrode terminal 2a via the conductive adhesive, and has a positive electrode connected to the lower surface of the positive electrode terminal 2a and a negative electrode connected to the upper surface of the negative electrode terminal 2b.
  • the LED package 10e configured as described above supplies power to the LED chip 3b via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3b in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10e as shown in FIG. 9, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3b, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7a of the frame 1a.
  • the barrier portion 7a of the frame 1a is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first to fourth embodiments.
  • production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
  • the LED chip 3b and the positive electrode terminal 2a can be connected by placing the LED chip 3b on the positive electrode terminal 2a via a conductive adhesive.
  • the connection by wire bonding is only on the negative electrode terminal 2b side, and the cost can be reduced.
  • the configuration in which the LED chip 3b is disposed within the frame 1a that constitutes the LED package 10a of the first embodiment is illustrated.
  • the LED packages 10b to 10d of the second to fourth embodiments are configured.
  • the LED chip 3b may be arranged in the frames 1b to 1d.
  • the LED packages 10a to 10e configured to emit white light by including the phosphor 6 in the sealing portion 5 are exemplified, but the phosphor is included in the sealing portion.
  • the LED packages 10a to 10e in which the barrier portion is formed in a part of the frame are exemplified, but the barrier portion may be formed of other insulating members.
  • an LED package including an LED chip is illustrated, but the present invention can also be applied to an electronic device package including another chip component.
  • the LED package used for the backlight of the liquid crystal display device is exemplified.
  • the present invention can also be applied to an LED package used for a lighting fixture or the like.
  • the present invention is useful for a liquid crystal display device, a lighting fixture, and the like because it can suppress a short circuit between terminals caused by ion migration in an LED package.

Abstract

L'invention porte sur un boîtier de diode électroluminescente (10a), lequel boîtier comprend : un bâti (1a) qui est réalisé sous la forme d'une enceinte ; une paire de bornes (2a, 2b) qui sont disposées de façon séparée l'une de l'autre à l'intérieur du bâti (1a) en vue en plan, et qui peuvent être connectées à l'extérieur ; une puce de diode électroluminescente (3a) qui est disposée à l'intérieur du bâti (1a) et connectée à la paire de bornes (2a, 2b) ; et un élément d'étanchéité transparent (5) qui est disposé à l'intérieur du bâti (1a) et qui recouvre la puce de diode électroluminescente (3a) et la paire de bornes (2a, 2b). Le bâti (1a) a une partie de barrière (7a) qui s'étend entre la paire de bornes (2a, 2b) dans une direction perpendiculaire à la direction dans laquelle la paire de bornes (2a, 2b) sont séparées l'une de l'autre, et la partie de barrière (7a) comporte un épaulement vis-à-vis des surfaces de la paire de bornes (2a, 2b).
PCT/JP2011/004301 2010-08-20 2011-07-28 Boîtier de diode électroluminescente WO2012023246A1 (fr)

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JP2010-184675 2010-08-20
JP2010184675 2010-08-20

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WO2012023246A1 true WO2012023246A1 (fr) 2012-02-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463705B (zh) * 2012-12-18 2014-12-01 玉晶光電股份有限公司 Light emitting device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004517465A (ja) * 2000-08-24 2004-06-10 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 発光ダイオードチップを含むオプトエレクトロニクス部品
JP2004228531A (ja) * 2003-01-27 2004-08-12 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2006093435A (ja) * 2004-09-24 2006-04-06 Stanley Electric Co Ltd Ｌｅｄ装置
JP2006228925A (ja) * 2005-02-17 2006-08-31 Seiko Epson Corp 光源装置およびその製造方法並びにプロジェクタ
JP2006310887A (ja) * 2006-07-25 2006-11-09 Nippon Leiz Co Ltd 光源装置の製造方法
JP2009170824A (ja) * 2008-01-19 2009-07-30 Nichia Corp 発光装置
JP2009200403A (ja) * 2008-02-25 2009-09-03 Toyoda Gosei Co Ltd 発光装置
JP2010165979A (ja) * 2009-01-19 2010-07-29 Rohm Co Ltd Ｌｅｄモジュールの製造方法およびｌｅｄモジュール

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004517465A (ja) * 2000-08-24 2004-06-10 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 発光ダイオードチップを含むオプトエレクトロニクス部品
JP2004228531A (ja) * 2003-01-27 2004-08-12 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2006093435A (ja) * 2004-09-24 2006-04-06 Stanley Electric Co Ltd Ｌｅｄ装置
JP2006228925A (ja) * 2005-02-17 2006-08-31 Seiko Epson Corp 光源装置およびその製造方法並びにプロジェクタ
JP2006310887A (ja) * 2006-07-25 2006-11-09 Nippon Leiz Co Ltd 光源装置の製造方法
JP2009170824A (ja) * 2008-01-19 2009-07-30 Nichia Corp 発光装置
JP2009200403A (ja) * 2008-02-25 2009-09-03 Toyoda Gosei Co Ltd 発光装置
JP2010165979A (ja) * 2009-01-19 2010-07-29 Rohm Co Ltd Ｌｅｄモジュールの製造方法およびｌｅｄモジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463705B (zh) * 2012-12-18 2014-12-01 玉晶光電股份有限公司 Light emitting device

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