WO2012023246A1 - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
WO2012023246A1
WO2012023246A1 PCT/JP2011/004301 JP2011004301W WO2012023246A1 WO 2012023246 A1 WO2012023246 A1 WO 2012023246A1 JP 2011004301 W JP2011004301 W JP 2011004301W WO 2012023246 A1 WO2012023246 A1 WO 2012023246A1
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WO
WIPO (PCT)
Prior art keywords
frame
emitting diode
light emitting
diode package
terminals
Prior art date
Application number
PCT/JP2011/004301
Other languages
French (fr)
Japanese (ja)
Inventor
目見田　裕一
Original Assignee
シャープ株式会社
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Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Publication of WO2012023246A1 publication Critical patent/WO2012023246A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

Definitions

  • the present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a light emitting diode chip and a pair of terminals for supplying power thereto.
  • a backlight using a light emitting diode that consumes less power than a backlight using a fluorescent tube such as CCFL (ColdCCathode Fluorescent Lamp).
  • LED light emitting diode
  • CCFL ColdCCathode Fluorescent Lamp
  • the backlight using the LED includes a plurality of LED packages each including an LED chip.
  • Each LED package includes an LED chip provided to emit light of a predetermined color to the outside, a pair of terminals provided to supply power to the LED chip from the outside, and the back surface of the LED chip
  • the reflector provided in the side and the transparent sealing part provided so that the surface of an LED chip might be covered are provided.
  • a light-emitting element housing in which the outermost surface of the plating layer deposited and deposited sequentially on the metallized metal layer formed on is a silver plating layer, and the silver plating layer has a predetermined crystal structure
  • a package is disclosed.
  • Patent Document 2 discloses a semiconductor package that has at least two parts bonded using an alloy filler, and the alloy filler is composed only of a solid solution of gold, silver, and copper dispersed in an atomic state in the filler. Is disclosed.
  • Patent Document 3 the insulating layer formed on the wafer provided with the electrode, the rewiring layer connected to the electrode and formed on the seed layer, and the wafer, the insulating layer, and the rewiring layer are sealed.
  • a semiconductor package including a sealing layer that stops, and at least a part of a side surface of each pattern wiring of the rewiring layer is covered with a seed layer made of a material having high migration resistance.
  • Patent Document 4 discloses a method for manufacturing an IC (Integrated Circuit) package in which the surface of a TAB (Tape Automated Bonding) carrier tape or a flexible printed circuit board is roughened before chip mounting.
  • TAB Tape Automated Bonding
  • a base metal serving as a ground electrode, a first ceramic layer provided with a ground conductive pattern for a microstrip line connected to the base metal, and an external circuit and a semiconductor chip are electrically connected.
  • the second ceramic layer provided with the line conductive pattern and the input / output lead terminal to be connected and the third ceramic layer provided with the ground conductive pattern connected to the base metal on the upper surface are sequentially laminated, and the input / output lead terminal and the base metal are laminated.
  • a package for a microwave device is disclosed in which are spaced apart from each other.
  • the present invention has been made in view of such points, and an object of the present invention is to easily suppress the occurrence of a short circuit between terminals due to ion migration.
  • the present invention provides a frame barrier between a pair of terminals.
  • a light emitting diode package includes a frame provided in a frame shape, a pair of terminals that are provided in the frame so as to be separated from each other in plan view, and can be connected to the outside, and the frame A light emitting diode chip provided in the frame and connected to the pair of terminals, and a light emitting diode provided in the frame of the frame and having a transparent sealing portion covering the light emitting diode chip and the pair of terminals.
  • the diode package, wherein the frame has a step formed between the pair of terminals so as to extend in a direction intersecting with a direction in which the pair of terminals are separated from each other. It has the part.
  • step difference with respect to the surface of a pair of terminal is provided between a pair of terminal connected in order to supply electric power to a light emitting diode chip, with respect to a light emitting diode chip Even if metal is deposited from one terminal to the other terminal side with the supply of electric power and ion migration occurs, the progress of the ion migration is blocked by the step formed in the barrier portion. Thereby, since a pair of terminal becomes difficult to short-circuit through the metal which precipitated by ion migration, generation
  • the frame having the barrier portion is easily formed, for example, by only partially changing the internal shape of the mold used for molding, so that occurrence of a short circuit between the terminals due to ion migration is easily suppressed.
  • the barrier part may be formed in a ridge.
  • the barrier portion is formed on the ridge, the progress of ion migration is specifically blocked by the side wall of the ridge.
  • the barrier portion may be formed in a concave line.
  • the barrier portion is formed in the groove, the progress of ion migration is specifically blocked by the sidewall of the groove.
  • the barrier portion may have a portion formed in a ridge and a portion formed in a ridge so as to be adjacent to the portion.
  • the barrier part since the barrier part has the part formed in the adjacent protruding item
  • the frame may be made of a white resin.
  • the frame is formed of white resin, the surface of the frame becomes white.
  • the surface of the frame on the light emitting diode chip side functions as a reflector.
  • the light emitting diode chip may be provided on one terminal of the pair of terminals.
  • the light-emitting diode chip is provided on one terminal, it is not necessary to separately provide a member for mounting the light-emitting diode chip, and the cost can be reduced.
  • the light emitting diode chip is placed on one terminal via a conductive adhesive, whereby the light emitting diode Since the chip and one terminal are connected, for example, the connection by wire bonding is only on the other terminal side, and the cost can be reduced.
  • the sealing part may be formed of a silicone resin.
  • the sealing portion is formed of a silicone resin, gas migration and moisture migration are likely to occur, but the ion migration progress is blocked by the barrier portion of the frame.
  • the effects of the present invention are effectively exhibited.
  • the sealing part is generally formed of a silicone resin having long-term reliability, discoloration and deterioration of the sealing part are suppressed.
  • the sealing portion may include a phosphor for converting light emitted from the photodiode chip into white light.
  • emitted with the light emitting diode chip into white light is contained in the sealing part, for example, yellow fluorescent substance is disperse
  • the white light is specifically emitted from the light emitting diode package by dispersing UV light and converting ultraviolet light into white light.
  • the frame barrier portion is provided between the pair of terminals, it is possible to easily suppress the occurrence of a short circuit between the terminals due to ion migration.
  • FIG. 1 is a top view of the LED package according to the first embodiment.
  • FIG. 2 is a bottom view of the LED package according to the first embodiment.
  • FIG. 3 is a cross-sectional view of the LED package taken along line III-III in FIG.
  • FIG. 4 is a cross-sectional view of the LED package taken along line IV-IV in FIG.
  • FIG. 5 is a cross-sectional view showing ion migration generated in the LED package according to the first embodiment.
  • FIG. 6 is a cross-sectional view of the LED package according to the second embodiment.
  • FIG. 7 is a cross-sectional view of the LED package according to the third embodiment.
  • FIG. 8 is a cross-sectional view of the LED package according to the fourth embodiment.
  • FIG. 9 is a cross-sectional view of the LED package according to the fifth embodiment.
  • Embodiment 1 of the Invention 1 to 5 show Embodiment 1 of an LED package according to the present invention.
  • FIGS. 1 and 2 are a top view and a bottom view of the LED package 10a of the present embodiment, respectively.
  • 3 and 4 are cross-sectional views of the LED package 10a taken along lines III-III and IV-IV in FIG. 1, respectively.
  • FIG. 5 is a cross-sectional view showing ion migration M generated in the LED package 10a.
  • the LED package 10a includes a frame 1a provided in a frame shape, and a positive electrode terminal 2a provided as a pair of terminals in the frame 1a so as to be separated from each other in plan view, and The LED chip 3a provided in the frame of the negative electrode terminal 2b and the frame 1a, and connected to the positive electrode terminal 2a and the negative electrode terminal 2b via the metal wires 4a and 4b, and the LED chip 3a provided in the frame of the frame 1a. 3a, and a transparent sealing portion 5 that covers the positive terminal 2a and the negative terminal 2b.
  • the frame 1 a is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side.
  • the connecting portion is formed lower than the outer frame portion, and has a protruding barrier portion 7a above the connecting portion.
  • the barrier portion 7a is provided so as to extend in a direction (vertical direction in FIG. 1) orthogonal to a direction (lateral direction in FIG. 1) in which the positive electrode terminal 2a and the negative electrode terminal 2b are separated from each other.
  • the surface of the negative electrode terminal 2b has a step (about 0.10 mm in the size exemplified below).
  • the size of the frame 1a is, for example, such that La in FIG.
  • the barrier portion 7a has an upper length of about 0.90 mm, a lower length of about 0.80 mm, and the cross-sectional shape is 0.
  • a trapezoid having an upper base of about 10 mm, a lower base of about 0.20 mm, and a height of about 0.10 mm.
  • the frame 1a is formed of, for example, a silicone-based thermosetting white resin, so that it functions as a reflector for reflecting light emitted from the LED chip 3a.
  • frame 1a although a thermosetting resin material is preferable, the thermoplastic resin material generally used for the package of a LED light-emitting device may be sufficient, for example.
  • the positive terminal 2a is fitted into the lower part of the relatively large frame of the frame 1a described above, and its lower surface is exposed from the frame 1a so that it can be connected to the outside. ing.
  • the negative electrode terminal 2b is fitted into the lower part of the relatively small frame of the frame 1a described above, and its lower surface is exposed from the frame 1a so that it can be connected to the outside. ing.
  • the positive electrode terminal 2a and the negative electrode terminal 2b include, for example, a metal substrate made of copper or the like, and a metal thin film such as nickel, palladium, silver, or gold coated on the surface of the metal substrate by plating. .
  • the LED chip 3a is fixed on the positive electrode terminal 2a via, for example, an insulating adhesive, and a positive electrode to which the positive electrode terminal 2a is connected on its upper surface, And a negative electrode to which the negative electrode terminal 2b is connected and configured to emit light of a predetermined color by supplying power to the chip body on which the compound semiconductor is laminated through the positive electrode and the negative electrode.
  • the metal wires 4a and 4b are formed of, for example, a gold wire.
  • the sealing part 5 is formed of, for example, a silicone resin and includes a phosphor 6 inside.
  • the phosphor 6 included in the sealing portion 5 is a yellow phosphor, or a red phosphor and a green phosphor, and the LED chip 3a emits ultraviolet light.
  • the phosphor 6 included in the sealing portion 5 is a red phosphor, a green phosphor, and a blue phosphor.
  • the LED package 10a having the above configuration supplies power to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10a as shown in FIG. 5, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7a of the frame 1a.
  • the surface of the positive electrode terminal 2a and the negative electrode terminal 2b is connected between the positive electrode terminal 2a and the negative electrode terminal 2b connected to supply power to the LED chip 3a.
  • the barrier portion 7a of the frame 1a having a step is provided, with the supply of power to the LED chip 3a, metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side, and ion migration M is generated.
  • the progress of the ion migration M can be blocked by the side wall of the barrier portion 7a.
  • the frame 1a having the barrier portion 7a is easily formed, for example, by only partially changing the internal shape of the mold used for molding, so that it is easy to generate a short circuit between the terminals due to the ion migration M. Can be suppressed.
  • the frame 1a is formed of white resin, the surface of the frame 1a becomes white. Thereby, since the light radiate
  • the LED chip 3a is provided on the positive electrode terminal 2a, it is not necessary to separately provide a member on which the LED chip 3a is placed, so that the cost can be reduced. it can.
  • the sealing portion 5 is formed of silicone resin, the ion migration M easily progresses while the ion migration M easily occurs through gas and moisture. Since it is interrupted by the barrier portion 7a of the frame 1a, it is possible to effectively suppress the occurrence of a short circuit between the terminals due to the ion migration M.
  • the sealing part 5 is generally formed of a silicone resin having long-term reliability, discoloration and deterioration of the sealing part 5 can be suppressed. .
  • FIG. 6 is a cross-sectional view of the LED package 10b of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the same portions as those in FIGS. 1 to 5 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the LED package 10a in which a part of the portion disposed between the positive electrode terminal and the negative electrode terminal of the frame is projected is illustrated.
  • the LED package 10a is disposed between the positive electrode terminal and the negative electrode terminal of the frame.
  • the LED package 10b from which the whole part protruded is illustrated.
  • the LED package 10b includes a frame 1b provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in the frame 1b so as to be separated from each other in plan view, and a frame 1b.
  • the LED chip 3a connected to the positive electrode terminal 2a and the negative electrode terminal 2b via the metal wires 4a and 4b, respectively, and the LED chip 3a, the positive electrode terminal 2a and the negative electrode provided in the frame 1b.
  • the transparent sealing part 5 which covers the terminal 2b is provided.
  • the frame 1 b is formed in an approximately 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof.
  • the portion is formed lower than the outer frame portion and protrudes from the positive electrode terminal 2a and the negative electrode terminal 2b.
  • the entire upper portion of the connecting portion is a barrier portion 7b, and other configurations are substantially the same as those of the frame 1a of the first embodiment.
  • the LED package 10b having the above configuration supplies power to the LED chip 3a through the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10b as shown in FIG. 6, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7b of the frame 1b.
  • the barrier portion 7b of the frame 1b is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first embodiment.
  • production of the short circuit between the terminals resulting from M can be suppressed easily.
  • FIG. 7 is a cross-sectional view of the LED package 10c of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the LED packages 10a and 10b including the frame in which the convex barrier portion is formed are illustrated.
  • the frame 1c in which the concave barrier portion is formed is provided.
  • the LED package 10c is illustrated.
  • the LED package 10c includes a frame 1c provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1c so as to be separated from each other in plan view, and a frame 1c.
  • LED chip 3a connected to positive electrode terminal 2a and negative electrode terminal 2b via metal wires 4a and 4b, respectively, and frame 1c, LED chip 3a, positive electrode terminal 2a and negative electrode
  • the transparent sealing part 5 which covers the terminal 2b is provided.
  • the frame 1 c is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof.
  • the portion is formed to be lower than the outer frame portion, has a concave barrier portion 7c at the upper portion of the connecting portion, and other configurations are substantially the same as the frame 1a of the first embodiment.
  • the LED package 10c having the above configuration supplies power to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10c as shown in FIG. 7, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7c of the frame 1c.
  • the barrier portion 7c of the frame 1c is provided between the positive terminal 2a and the negative terminal 2b as in the first and second embodiments.
  • production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
  • FIG. 8 is a cross-sectional view of the LED package 10d of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the LED packages 10a to 10c including the frame in which the protruding or recessed barrier portions are formed are exemplified. However, in the present embodiment, both the protruding and recessed barrier portions are provided. An LED package 10d including the formed frame 1d is illustrated.
  • the LED package 10d includes a frame 1d provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1d so as to be separated from each other in plan view, and a frame 1d.
  • LED chip 3a connected to the positive electrode terminal 2a and negative electrode terminal 2b via metal wires 4a and 4b, respectively, and a frame 1d provided to the LED chip 3a, positive electrode terminal 2a and negative electrode
  • the transparent sealing part 5 which covers the terminal 2b is provided.
  • the frame 1 d is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof.
  • the portion is formed lower than the outer frame portion, and has a barrier portion 7d having a portion 7da formed on the upper portion of the connecting portion and a portion 7db formed on the concave portion, and the other configuration is as described above. It is substantially the same as the frame 1a of the first embodiment.
  • the LED package 10d having the above configuration supplies fluorescent light to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and contains blue light or ultraviolet light emitted from the LED chip 3a in the sealing portion 5. By converting to white light through the body 6, white light is emitted to the outside.
  • the LED package 10d as shown in FIG. 8, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side walls of the portion 7da formed on the protrusions and the portion 7db formed on the recesses constituting the barrier portion 7d of the frame 1c.
  • the barrier portion 7d of the frame 1d is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first to third embodiments.
  • production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
  • FIG. 9 is a cross-sectional view of the LED package 10e of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
  • the LED packages 10a to 10d including the LED chip having the positive electrode and the negative electrode formed on the upper surface are exemplified.
  • the LED chip having only the negative electrode formed on the upper surface is illustrated.
  • the LED package 10e includes a frame 1a provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1a so as to be separated from each other in plan view, and a frame 1a.
  • LED chip 3b connected to the positive electrode terminal 2a and the negative electrode terminal 2b via a conductive adhesive (not shown) and a metal wire 4b, and an LED chip provided in the frame 1a. 3b, and a transparent sealing portion 5 that covers the positive electrode terminal 2a and the negative electrode terminal 2b.
  • the LED chip 3b is fixed on the positive electrode terminal 2a via the conductive adhesive, and has a positive electrode connected to the lower surface of the positive electrode terminal 2a and a negative electrode connected to the upper surface of the negative electrode terminal 2b.
  • the LED package 10e configured as described above supplies power to the LED chip 3b via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3b in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside.
  • white light is emitted to the outside.
  • the LED package 10e as shown in FIG. 9, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3b, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7a of the frame 1a.
  • the barrier portion 7a of the frame 1a is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first to fourth embodiments.
  • production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
  • the LED chip 3b and the positive electrode terminal 2a can be connected by placing the LED chip 3b on the positive electrode terminal 2a via a conductive adhesive.
  • the connection by wire bonding is only on the negative electrode terminal 2b side, and the cost can be reduced.
  • the configuration in which the LED chip 3b is disposed within the frame 1a that constitutes the LED package 10a of the first embodiment is illustrated.
  • the LED packages 10b to 10d of the second to fourth embodiments are configured.
  • the LED chip 3b may be arranged in the frames 1b to 1d.
  • the LED packages 10a to 10e configured to emit white light by including the phosphor 6 in the sealing portion 5 are exemplified, but the phosphor is included in the sealing portion.
  • the LED packages 10a to 10e in which the barrier portion is formed in a part of the frame are exemplified, but the barrier portion may be formed of other insulating members.
  • an LED package including an LED chip is illustrated, but the present invention can also be applied to an electronic device package including another chip component.
  • the LED package used for the backlight of the liquid crystal display device is exemplified.
  • the present invention can also be applied to an LED package used for a lighting fixture or the like.
  • the present invention is useful for a liquid crystal display device, a lighting fixture, and the like because it can suppress a short circuit between terminals caused by ion migration in an LED package.

Abstract

Disclosed is a light emitting diode package (10a) which comprises: a frame (1a) that is provided in the form of a case; a pair of terminals (2a, 2b) that are provided apart from each other within the frame (1a) when viewed in plan and can be connected to the outside; a light emitting diode chip (3a) that is provided within the frame (1a) and connected to the pair of terminals (2a, 2b); and a transparent sealing member (5) that is provided within the frame (1a) and covers the light emitting diode chip (3a) and the pair of terminals (2a, 2b). The frame (1a) has a barrier portion (7a) that extends between the pair of terminals (2a, 2b) in a direction perpendicular to the direction in which the pair of terminals (2a, 2b) are separated from each other, and the barrier portion (7a) is provided with a step with respect to the surfaces of the pair of terminals (2a, 2b).

Description

発光ダイオードパッケージLight emitting diode package
　本発明は、発光ダイオードパッケージに関し、特に、発光ダイオードチップ及びそれに電力を供給するための一対の端子を備えた発光ダイオードパッケージに関するものである。 The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a light emitting diode chip and a pair of terminals for supplying power thereto.
　近年、液晶表示装置では、ＣＣＦＬ(Cold Cathode Fluorescent Lamp)などの蛍光管を用いたバックライトよりも消費電力が低くなる発光ダイオード（Light Emitting Diode、以下、「ＬＥＤ」とも称する）を用いたバックライトが注目されている。 In recent years, in liquid crystal display devices, a backlight using a light emitting diode (hereinafter referred to as “LED”) that consumes less power than a backlight using a fluorescent tube such as CCFL (ColdCCathode Fluorescent Lamp). Is attracting attention.
　ここで、ＬＥＤを用いたバックライトは、各々、ＬＥＤチップが内蔵された複数のＬＥＤパッケージを備えている。そして、各ＬＥＤパッケージは、所定の色の光を外部に出射するように設けられたＬＥＤチップと、ＬＥＤチップに外部から電力が供給されるように設けられた一対の端子と、ＬＥＤチップの裏面側に設けられたリフレクターと、ＬＥＤチップの表面を覆うように設けられた透明な封止部とを備えている。 Here, the backlight using the LED includes a plurality of LED packages each including an LED chip. Each LED package includes an LED chip provided to emit light of a predetermined color to the outside, a pair of terminals provided to supply power to the LED chip from the outside, and the back surface of the LED chip The reflector provided in the side and the transparent sealing part provided so that the surface of an LED chip might be covered are provided.
　ところで、ＬＥＤパッケージのように、一対の端子が設けられた電子素子パッケージでは、電力の供給に伴って、一方の端子から他方の端子に金属イオンが移動し、端子間に金属が析出する、イオンマイグレーションと呼ばれる現象の発生、及びそれに起因する端子間における短絡の発生が懸念されるので、イオンマイグレーションの発生を抑制するための種々のパッケージ技術が提案されている。 By the way, in an electronic device package provided with a pair of terminals, such as an LED package, metal ions move from one terminal to the other as the power is supplied, and the metal is deposited between the terminals. Since there is concern about the occurrence of a phenomenon called migration and the occurrence of a short circuit between terminals due to the phenomenon, various package technologies for suppressing the occurrence of ion migration have been proposed.
　例えば、特許文献１には、上面に発光素子を搭載するための搭載部を有する基体と、基体の上面に搭載部を囲繞するように接合された枠体と、枠体の貫通孔の内側面に形成されたメタライズ金属層上に順次積層されて被着形成されためっき層の最表面が銀めっき層である反射層とを具備し、銀めっき層が、所定の結晶構造を有する発光素子収納用パッケージが開示されている。 For example, in Patent Document 1, a base body having a mounting portion for mounting a light emitting element on an upper surface, a frame body joined to surround the mounting portion on the upper surface of the base body, and an inner surface of a through hole of the frame body A light-emitting element housing in which the outermost surface of the plating layer deposited and deposited sequentially on the metallized metal layer formed on is a silver plating layer, and the silver plating layer has a predetermined crystal structure A package is disclosed.
　また、特許文献２には、合金フィラーを使用して結合した少なくとも２つの部品を有し、合金フィラーが、フィラー中に原子状態で分散している金、銀及び銅の固溶体のみからなる半導体パッケージが開示されている。 Patent Document 2 discloses a semiconductor package that has at least two parts bonded using an alloy filler, and the alloy filler is composed only of a solid solution of gold, silver, and copper dispersed in an atomic state in the filler. Is disclosed.
　また、特許文献３には、電極が設けられたウェハ上に形成された絶縁層と、電極に接続され且つシード層上に形成された再配線層と、ウェハ、絶縁層及び再配線層を封止する封止層とを備え、再配線層の各パターン配線の側面の少なくとも一部が、耐マイグレーションの高い材料からなるシード層によって被覆されている半導体パッケージが開示されている。 In Patent Document 3, the insulating layer formed on the wafer provided with the electrode, the rewiring layer connected to the electrode and formed on the seed layer, and the wafer, the insulating layer, and the rewiring layer are sealed. There is disclosed a semiconductor package including a sealing layer that stops, and at least a part of a side surface of each pattern wiring of the rewiring layer is covered with a seed layer made of a material having high migration resistance.
　また、特許文献４には、ＴＡＢ（Tape Automated Bonding）用キャリアテープ、又はフレキシブルプリント基板の表面をチップ搭載前に粗面化処理する、ＩＣ（Integrated Circuit）パッケージの製造方法が開示されている。 Patent Document 4 discloses a method for manufacturing an IC (Integrated Circuit) package in which the surface of a TAB (Tape Automated Bonding) carrier tape or a flexible printed circuit board is roughened before chip mounting.
　また、特許文献５には、接地電極となるベース金属と、ベース金属に接続されたマイクロストリップ線路用の接地導電パターンを設けた第１セラミック層と、外部回路と半導体チップとを電気的に接続する線路導電パターン及び入出力リード端子を設けた第２セラミック層と、上面にベース金属と接続した接地導電パターンを設けた第３セラミック層とを順次積層してなり、入出力リード端子とベース金属とを離間させたマイクロ波デバイス用パッケージが開示されている。 Further, in Patent Document 5, a base metal serving as a ground electrode, a first ceramic layer provided with a ground conductive pattern for a microstrip line connected to the base metal, and an external circuit and a semiconductor chip are electrically connected. The second ceramic layer provided with the line conductive pattern and the input / output lead terminal to be connected and the third ceramic layer provided with the ground conductive pattern connected to the base metal on the upper surface are sequentially laminated, and the input / output lead terminal and the base metal are laminated. A package for a microwave device is disclosed in which are spaced apart from each other.
特開２００７－１４２３５２号公報JP 2007-142352 A 特表２００７－５２８５９０号公報Special table 2007-528590 特開２００５－１２９８６２号公報JP 2005-129862 A 特開平３－２７００２６号公報JP-A-3-270026 特開平１０－１６３３５３号公報JP-A-10-163353
　ところで、上述した構成のＬＥＤパッケージでは、イオンマイグレーションの発生及びそれに起因する端子間における短絡の発生を抑制するために、例えば、ガスバリア性の高いエポキシ樹脂を用いて封止部を形成すると、封止部の変色や劣化が懸念され、また、金配合材料を用いて端子を形成すると、端子表面の初期反射率の低下が懸念されるので、ＬＥＤパッケージを構成する部材の材料変更により、端子間における短絡の発生が抑制されても、トレードオフの関係で他の特性が低下するおそれがある。そのため、ＬＥＤパッケージにおいて、イオンマイグレーションに起因する端子間における短絡の発生を抑制することは、容易でない。 By the way, in the LED package having the above-described configuration, in order to suppress the occurrence of ion migration and the occurrence of a short circuit between terminals due to the ion migration, for example, when a sealing portion is formed using an epoxy resin having a high gas barrier property, sealing is performed. There is a concern about discoloration and deterioration of the part, and when a terminal is formed using a gold compound material, there is a concern about a decrease in the initial reflectance of the terminal surface. Even if the occurrence of a short circuit is suppressed, other characteristics may deteriorate due to a trade-off relationship. Therefore, it is not easy to suppress the occurrence of a short circuit between terminals due to ion migration in the LED package.
　本発明は、かかる点に鑑みてなされたものであり、その目的とするところは、イオンマイグレーションに起因する端子間における短絡の発生を容易に抑制することにある。 The present invention has been made in view of such points, and an object of the present invention is to easily suppress the occurrence of a short circuit between terminals due to ion migration.
　上記目的を達成するために、本発明は、一対の端子の間にフレームの障壁部を設けるようにしたものである。 In order to achieve the above object, the present invention provides a frame barrier between a pair of terminals.
　具体的に本発明に係る発光ダイオードパッケージは、枠状に設けられたフレームと、上記フレームの枠内に平面視で互いに離間するように設けられ、外部に接続可能な一対の端子と、上記フレームの枠内に設けられ、上記一対の端子にそれぞれ接続された発光ダイオードチップと、上記フレームの枠内に設けられ、上記発光ダイオードチップ及び一対の端子を覆う透明な封止部とを備えた発光ダイオードパッケージであって、上記フレームは、上記一対の端子の間において、該一対の端子の離間する方向と交差する方向に延びるように、該一対の端子の表面に対して段差が形成された障壁部を有していることを特徴とする。 Specifically, a light emitting diode package according to the present invention includes a frame provided in a frame shape, a pair of terminals that are provided in the frame so as to be separated from each other in plan view, and can be connected to the outside, and the frame A light emitting diode chip provided in the frame and connected to the pair of terminals, and a light emitting diode provided in the frame of the frame and having a transparent sealing portion covering the light emitting diode chip and the pair of terminals. The diode package, wherein the frame has a step formed between the pair of terminals so as to extend in a direction intersecting with a direction in which the pair of terminals are separated from each other. It has the part.
　上記の構成によれば、発光ダイオードチップに電力を供給するために接続された一対の端子の間に一対の端子の表面に対して段差を有する障壁部が設けられているので、発光ダイオードチップに対する電力の供給に伴って、一方の端子から他方の端子側に金属が析出して、イオンマイグレーションが発生しても、そのイオンマイグレーションの進行が障壁部に形成された段差で遮断される。これにより、イオンマイグレーションで析出した金属を介して一対の端子が短絡し難くなるので、イオンマイグレーションに起因する端子間における短絡の発生が抑制される。そして、障壁部を有するフレームは、例えば、成型に用いる金型の内部形状を部分的に変更するだけで容易に形成されるので、イオンマイグレーションに起因する端子間における短絡の発生が容易に抑制される。 According to said structure, since the barrier part which has a level | step difference with respect to the surface of a pair of terminal is provided between a pair of terminal connected in order to supply electric power to a light emitting diode chip, with respect to a light emitting diode chip Even if metal is deposited from one terminal to the other terminal side with the supply of electric power and ion migration occurs, the progress of the ion migration is blocked by the step formed in the barrier portion. Thereby, since a pair of terminal becomes difficult to short-circuit through the metal which precipitated by ion migration, generation | occurrence | production of the short circuit between the terminals resulting from ion migration is suppressed. The frame having the barrier portion is easily formed, for example, by only partially changing the internal shape of the mold used for molding, so that occurrence of a short circuit between the terminals due to ion migration is easily suppressed. The
　上記障壁部は、凸条に形成されていてもよい。 The barrier part may be formed in a ridge.
　上記の構成によれば、障壁部が凸条に形成されているので、イオンマイグレーションの進行が凸条の側壁で具体的に遮断される。 According to the above configuration, since the barrier portion is formed on the ridge, the progress of ion migration is specifically blocked by the side wall of the ridge.
　上記障壁部は、凹条に形成されていてもよい。 The barrier portion may be formed in a concave line.
　上記の構成によれば、障壁部が凹条に形成されているので、イオンマイグレーションの進行が凹条の側壁で具体的に遮断される。 According to the above configuration, since the barrier portion is formed in the groove, the progress of ion migration is specifically blocked by the sidewall of the groove.
　上記障壁部は、凸条に形成された部分と、該部分に隣り合うように凹条に形成された部分とを有していてもよい。 The barrier portion may have a portion formed in a ridge and a portion formed in a ridge so as to be adjacent to the portion.
　上記の構成によれば、障壁部が、互いに隣り合う凸条に形成された部分及び凹条に形成された部分を有しているので、イオンマイグレーションの進行が凸条に形成された部分の側壁及び凹条に形成された部分の側壁で具体的に遮断される。 According to said structure, since the barrier part has the part formed in the adjacent protruding item | line and the part formed in the recessed item, the side wall of the part in which progress of ion migration was formed in the protruding item | line And it is interrupted | blocked specifically by the side wall of the part formed in the groove.
　上記フレームは、白色の樹脂により形成されていてもよい。 The frame may be made of a white resin.
　上記の構成によれば、フレームが白色の樹脂により形成されているので、フレームの表面が白色になる。これにより、発光ダイオードチップで出射した光がフレームの表面で反射されるので、発光ダイオードチップ側のフレームの表面がリフレクターとして機能することになる。 According to the above configuration, since the frame is formed of white resin, the surface of the frame becomes white. Thereby, since the light emitted from the light emitting diode chip is reflected by the surface of the frame, the surface of the frame on the light emitting diode chip side functions as a reflector.
　上記発光ダイオードチップは、上記一対の端子の一方の端子上に設けられていてもよい。 The light emitting diode chip may be provided on one terminal of the pair of terminals.
　上記の構成によれば、発光ダイオードチップが一方の端子上に設けられているので、発光ダイオードチップを載置する部材を別途設ける必要がなくなり、コスト低減を図ることが可能になる。また、発光ダイオードチップの上面及び下面に電力供給用の電極がそれぞれ形成されている場合には、その発光ダイオードチップを一方の端子上に導電性接着剤を介して載置することにより、発光ダイオードチップと一方の端子とが接続されるので、例えば、ワイヤーボンディングによる接続が他方の端子側だけになり、コスト低減を図ることが可能になる。 According to the above configuration, since the light-emitting diode chip is provided on one terminal, it is not necessary to separately provide a member for mounting the light-emitting diode chip, and the cost can be reduced. In addition, when electrodes for supplying power are respectively formed on the upper surface and the lower surface of the light emitting diode chip, the light emitting diode chip is placed on one terminal via a conductive adhesive, whereby the light emitting diode Since the chip and one terminal are connected, for example, the connection by wire bonding is only on the other terminal side, and the cost can be reduced.
　上記封止部は、シリコーン樹脂により形成されていてもよい。 The sealing part may be formed of a silicone resin.
　上記の構成によれば、封止部がシリコーン樹脂により形成されているので、ガスや水分を透過して、イオンマイグレーションが発生し易いものの、イオンマイグレーションの進行がフレームの障壁部で遮断されるので、本発明の作用効果が有効に奏される。また、封止部が一般的に長期の信頼性を有するシリコーン樹脂により形成されているので、封止部の変色や劣化が抑制される。 According to the above configuration, since the sealing portion is formed of a silicone resin, gas migration and moisture migration are likely to occur, but the ion migration progress is blocked by the barrier portion of the frame. The effects of the present invention are effectively exhibited. Moreover, since the sealing part is generally formed of a silicone resin having long-term reliability, discoloration and deterioration of the sealing part are suppressed.
　上記封止部には、上記光ダイオードチップで出射した光を白色光に変換するための蛍光体が含まれていてもよい。 The sealing portion may include a phosphor for converting light emitted from the photodiode chip into white light.
　上記の構成によれば、封止部に発光ダイオードチップで出射した光を白色光に変換するための蛍光体が含まれているので、例えば、封止部に黄色蛍光体を分散して、青色光を白色光に変換したり、封止部に赤色蛍光体及び緑色蛍光体を分散して、青色光を白色光に変換したり、封止部に赤色蛍光体、緑色蛍光体及び青色蛍光体を分散して、紫外光を白色光に変換したりすることにより、発光ダイオードパッケージから白色光が具体的に出射される。 According to said structure, since the fluorescent substance for converting the light radiate | emitted with the light emitting diode chip into white light is contained in the sealing part, for example, yellow fluorescent substance is disperse | distributed to a sealing part, and blue Converts light into white light, disperses red phosphor and green phosphor in the sealing part, converts blue light into white light, red phosphor, green phosphor and blue phosphor in the sealing part The white light is specifically emitted from the light emitting diode package by dispersing UV light and converting ultraviolet light into white light.
　本発明によれば、一対の端子の間にフレームの障壁部が設けられているので、イオンマイグレーションに起因する端子間における短絡の発生を容易に抑制することができる。 According to the present invention, since the frame barrier portion is provided between the pair of terminals, it is possible to easily suppress the occurrence of a short circuit between the terminals due to ion migration.
図１は、実施形態１に係るＬＥＤパッケージの上面図である。FIG. 1 is a top view of the LED package according to the first embodiment. 図２は、実施形態１に係るＬＥＤパッケージの下面図である。FIG. 2 is a bottom view of the LED package according to the first embodiment. 図３は、図１中のIII－III線に沿ったＬＥＤパッケージの断面図である。FIG. 3 is a cross-sectional view of the LED package taken along line III-III in FIG. 図４は、図１中のIV－IV線に沿ったＬＥＤパッケージの断面図である。FIG. 4 is a cross-sectional view of the LED package taken along line IV-IV in FIG. 図５は、実施形態１に係るＬＥＤパッケージで発生したイオンマイグレーションを示す断面図である。FIG. 5 is a cross-sectional view showing ion migration generated in the LED package according to the first embodiment. 図６は、実施形態２に係るＬＥＤパッケージの断面図である。FIG. 6 is a cross-sectional view of the LED package according to the second embodiment. 図７は、実施形態３に係るＬＥＤパッケージの断面図である。FIG. 7 is a cross-sectional view of the LED package according to the third embodiment. 図８は、実施形態４に係るＬＥＤパッケージの断面図である。FIG. 8 is a cross-sectional view of the LED package according to the fourth embodiment. 図９は、実施形態５に係るＬＥＤパッケージの断面図である。FIG. 9 is a cross-sectional view of the LED package according to the fifth embodiment.
　以下、本発明の実施形態を図面に基づいて詳細に説明する。なお、本発明は、以下の各実施形態に限定されるものではない。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments.
　《発明の実施形態１》
　図１～図５は、本発明に係るＬＥＤパッケージの実施形態１を示している。具体的に図１及び図２は、各々、本実施形態のＬＥＤパッケージ１０ａの上面図及び下面図である。また、図３及び図４は、各々、図１中のIII－III線及びIV－IV線に沿ったＬＥＤパッケージ１０ａの断面図である。さらに、図５は、ＬＥＤパッケージ１０ａで発生したイオンマイグレーションＭを示す断面図である。 Embodiment 1 of the Invention
1 to 5 show Embodiment 1 of an LED package according to the present invention. Specifically, FIGS. 1 and 2 are a top view and a bottom view of the LED package 10a of the present embodiment, respectively. 3 and 4 are cross-sectional views of the LED package 10a taken along lines III-III and IV-IV in FIG. 1, respectively. FIG. 5 is a cross-sectional view showing ion migration M generated in the LED package 10a.
　ＬＥＤパッケージ１０ａは、図１～図４に示すように、枠状に設けられたフレーム１ａと、フレーム１ａの枠内に平面視で互いに離間するように一対の端子として設けられた正極端子２ａ及び負極端子２ｂと、フレーム１ａの枠内に設けられ、正極端子２ａ及び負極端子２ｂに金属ワイヤー４ａ及び４ｂを介してそれぞれ接続されたＬＥＤチップ３ａと、フレーム１ａの枠内に設けられ、ＬＥＤチップ３ａ、正極端子２ａ及び負極端子２ｂを覆う透明な封止部５とを備えている。 As shown in FIGS. 1 to 4, the LED package 10a includes a frame 1a provided in a frame shape, and a positive electrode terminal 2a provided as a pair of terminals in the frame 1a so as to be separated from each other in plan view, and The LED chip 3a provided in the frame of the negative electrode terminal 2b and the frame 1a, and connected to the positive electrode terminal 2a and the negative electrode terminal 2b via the metal wires 4a and 4b, and the LED chip 3a provided in the frame of the frame 1a. 3a, and a transparent sealing portion 5 that covers the positive terminal 2a and the negative terminal 2b.
　フレーム１ａは、図１及び図２に示すように、相対的に大きい矩形の枠体と相対的に小さい矩形の枠体とがその１辺で連結した略８の字状の枠状に形成され、その連結部分が外枠部分よりも低く形成され、その連結部分の上部に凸条の障壁部７ａを有している。ここで、障壁部７ａは、正極端子２ａ及び負極端子２ｂの離間する方向（図１中の横方向）と直交する方向（図１中の縦方向）に延びるように設けられ、正極端子２ａ及び負極端子２ｂの各表面に対して段差（下記例示したサイズでは、０．１０ｍｍ程度）を有している。また、フレーム１ａのサイズは、例えば、図２中のＬａが３．５０ｍｍ程度であり、図１中のＬｂが３．００ｍｍ程度であり、図１中のＬｃが０．２０ｍｍ程度であり、図１中のＬｄが０．１０ｍｍ程度であり、図２中のＷａが１．５０ｍｍ程度であり、図１中のＷｂが１．００ｍｍ程度であり、図１中のＷｃが０．９０ｍｍ程度であり、図１中のＷｄが０．８０ｍｍ程度であり、図４中のＨａが０．８０ｍｍ程度であり、図３中のＨｂが０．１０ｍｍ程度である。なお、上記例示したサイズによれば、障壁部７ａは、その上側の長さが０．９０ｍｍ程度になり、その下側の長さが０．８０ｍｍ程度になり、その横断面の形状が、０．１０ｍｍ程度の上底、０．２０ｍｍ程度の下底、及び０．１０ｍｍ程度の高さを有する台形になる。 As shown in FIGS. 1 and 2, the frame 1 a is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side. The connecting portion is formed lower than the outer frame portion, and has a protruding barrier portion 7a above the connecting portion. Here, the barrier portion 7a is provided so as to extend in a direction (vertical direction in FIG. 1) orthogonal to a direction (lateral direction in FIG. 1) in which the positive electrode terminal 2a and the negative electrode terminal 2b are separated from each other. The surface of the negative electrode terminal 2b has a step (about 0.10 mm in the size exemplified below). The size of the frame 1a is, for example, such that La in FIG. 2 is about 3.50 mm, Lb in FIG. 1 is about 3.00 mm, and Lc in FIG. 1 is about 0.20 mm. 1 is about 0.10 mm, Wa in FIG. 2 is about 1.50 mm, Wb in FIG. 1 is about 1.00 mm, and Wc in FIG. 1 is about 0.90 mm. 1 is about 0.80 mm, Ha in FIG. 4 is about 0.80 mm, and Hb in FIG. 3 is about 0.10 mm. According to the above exemplified size, the barrier portion 7a has an upper length of about 0.90 mm, a lower length of about 0.80 mm, and the cross-sectional shape is 0. A trapezoid having an upper base of about 10 mm, a lower base of about 0.20 mm, and a height of about 0.10 mm.
　また、フレーム１ａは、例えば、シリコーン系などの熱硬化性の白色樹脂により形成されていることにより、ＬＥＤチップ３ａから出射される光を反射するためのリフレクターとして機能するようになっている。なお、フレーム１ａを構成する樹脂材料としては、熱硬化性の樹脂材料が好ましいが、例えば、ＬＥＤ発光装置のパッケージ用として一般的に用いられる熱可塑性の樹脂材料であってもよい。 Also, the frame 1a is formed of, for example, a silicone-based thermosetting white resin, so that it functions as a reflector for reflecting light emitted from the LED chip 3a. In addition, as a resin material which comprises the flame | frame 1a, although a thermosetting resin material is preferable, the thermoplastic resin material generally used for the package of a LED light-emitting device may be sufficient, for example.
　正極端子２ａは、図１～図４に示すように、上述したフレーム１ａの相対的に大きな枠体の下部に嵌め込まれ、その下面がフレーム１ａから露出することにより、外部に接続可能に設けられている。 As shown in FIGS. 1 to 4, the positive terminal 2a is fitted into the lower part of the relatively large frame of the frame 1a described above, and its lower surface is exposed from the frame 1a so that it can be connected to the outside. ing.
　負極端子２ｂは、図１～図３に示すように、上述したフレーム１ａの相対的に小さな枠体の下部に嵌め込まれ、その下面がフレーム１ａから露出することにより、外部に接続可能に設けられている。 As shown in FIGS. 1 to 3, the negative electrode terminal 2b is fitted into the lower part of the relatively small frame of the frame 1a described above, and its lower surface is exposed from the frame 1a so that it can be connected to the outside. ing.
　また、正極端子２ａ及び負極端子２ｂは、例えば、銅などからなる金属基材と、その金属基材の表面にめっきにより被覆されたニッケル、パラジウム、銀、金などの金属薄膜とを備えている。 The positive electrode terminal 2a and the negative electrode terminal 2b include, for example, a metal substrate made of copper or the like, and a metal thin film such as nickel, palladium, silver, or gold coated on the surface of the metal substrate by plating. .
　ＬＥＤチップ３ａは、図１、図３及び図４に示すように、例えば、絶縁性接着剤などを介して正極端子２ａ上に固定され、その上面に、正極端子２ａが接続される正極電極、及び負極端子２ｂが接続される負極電極を有し、化合物半導体が積層されたチップ本体に上記正極電極及び負極電極を介して電力を供給することにより、所定の色の光を出射するように構成されている。 As shown in FIGS. 1, 3 and 4, the LED chip 3a is fixed on the positive electrode terminal 2a via, for example, an insulating adhesive, and a positive electrode to which the positive electrode terminal 2a is connected on its upper surface, And a negative electrode to which the negative electrode terminal 2b is connected and configured to emit light of a predetermined color by supplying power to the chip body on which the compound semiconductor is laminated through the positive electrode and the negative electrode. Has been.
　金属ワイヤー４ａ及び４ｂは、例えば、金線などにより形成されている。 The metal wires 4a and 4b are formed of, for example, a gold wire.
　封止部５は、例えば、シリコーン樹脂により形成され、その内部に蛍光体６を含んでいる。ここで、ＬＥＤチップ３ａが青色光を出射する場合には、封止部５に含まれる蛍光体６が、黄色蛍光体、又は赤色蛍光体及び緑色蛍光体であり、ＬＥＤチップ３ａが紫外光を出射する場合には、封止部５に含まれる蛍光体６が、赤色蛍光体、緑色蛍光体及び青色蛍光体である。 The sealing part 5 is formed of, for example, a silicone resin and includes a phosphor 6 inside. Here, when the LED chip 3a emits blue light, the phosphor 6 included in the sealing portion 5 is a yellow phosphor, or a red phosphor and a green phosphor, and the LED chip 3a emits ultraviolet light. In the case of emission, the phosphor 6 included in the sealing portion 5 is a red phosphor, a green phosphor, and a blue phosphor.
　上記構成のＬＥＤパッケージ１０ａは、正極端子２ａ及び負極端子２ｂを介してＬＥＤチップ３ａに電力を供給して、ＬＥＤチップ３ａで出射された青色光又は紫外光を、封止部５に含有する蛍光体６を介して白色光に変換することにより、外部に白色光を出射するように構成されている。そして、ＬＥＤパッケージ１０ａでは、図５に示すように、ＬＥＤチップ３ａに対する電力の供給に伴って、正極端子２ａから負極端子２ｂ側に金属が析出して、イオンマイグレーションＭが発生しても、そのイオンマイグレーションＭの進行をフレーム１ａの障壁部７ａの側壁で遮断することができる。 The LED package 10a having the above configuration supplies power to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside. In the LED package 10a, as shown in FIG. 5, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7a of the frame 1a.
　以上説明したように、本実施形態のＬＥＤパッケージ１０ａによれば、ＬＥＤチップ３ａに電力を供給するために接続された正極端子２ａ及び負極端子２ｂの間に正極端子２ａ及び負極端子２ｂの表面に対して段差を有するフレーム１ａの障壁部７ａが設けられているので、ＬＥＤチップ３ａに対する電力の供給に伴って、正極端子２ａから負極端子２ｂ側に金属が析出して、イオンマイグレーションＭが発生しても、イオンマイグレーションＭの進行を障壁部７ａの側壁で遮断することができる。これにより、イオンマイグレーションＭで析出した金属を介して正極端子２ａ及び負極端子２ｂが短絡し難くなるので、イオンマイグレーションＭに起因する端子間における短絡の発生を抑制することができる。そして、障壁部７ａを有するフレーム１ａは、例えば、成型に用いる金型の内部形状を部分的に変更するだけで容易に形成されるので、イオンマイグレーションＭに起因する端子間における短絡の発生を容易に抑制することができる。 As described above, according to the LED package 10a of the present embodiment, the surface of the positive electrode terminal 2a and the negative electrode terminal 2b is connected between the positive electrode terminal 2a and the negative electrode terminal 2b connected to supply power to the LED chip 3a. On the other hand, since the barrier portion 7a of the frame 1a having a step is provided, with the supply of power to the LED chip 3a, metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side, and ion migration M is generated. However, the progress of the ion migration M can be blocked by the side wall of the barrier portion 7a. Thereby, since it becomes difficult to short-circuit the positive electrode terminal 2a and the negative electrode terminal 2b through the metal which precipitated by the ion migration M, generation | occurrence | production of the short circuit between the terminals resulting from the ion migration M can be suppressed. The frame 1a having the barrier portion 7a is easily formed, for example, by only partially changing the internal shape of the mold used for molding, so that it is easy to generate a short circuit between the terminals due to the ion migration M. Can be suppressed.
　また、本実施形態のＬＥＤパッケージ１０ａによれば、フレーム１ａが白色の樹脂により形成されているので、フレーム１ａの表面が白色になる。これにより、ＬＥＤチップ３ａで出射した光がフレーム１ａの表面で反射されるので、ＬＥＤチップ３ａ側のフレーム１ａの表面をリフレクターとして機能させることができる。 Further, according to the LED package 10a of the present embodiment, since the frame 1a is formed of white resin, the surface of the frame 1a becomes white. Thereby, since the light radiate | emitted by LED chip 3a is reflected by the surface of the frame 1a, the surface of the frame 1a by the side of the LED chip 3a can be functioned as a reflector.
　また、本実施形態のＬＥＤパッケージ１０ａによれば、ＬＥＤチップ３ａが正極端子２ａ上に設けられているので、ＬＥＤチップ３ａを載置する部材を別途設ける必要がないため、コスト低減を図ることができる。 Further, according to the LED package 10a of the present embodiment, since the LED chip 3a is provided on the positive electrode terminal 2a, it is not necessary to separately provide a member on which the LED chip 3a is placed, so that the cost can be reduced. it can.
　また、本実施形態のＬＥＤパッケージ１０ａによれば、封止部５がシリコーン樹脂により形成されているので、ガスや水分を透過して、イオンマイグレーションＭが発生し易いものの、イオンマイグレーションＭの進行がフレーム１ａの障壁部７ａで遮断されるので、イオンマイグレーションＭに起因する端子間における短絡の発生を効果的に抑制することができる。 In addition, according to the LED package 10a of the present embodiment, since the sealing portion 5 is formed of silicone resin, the ion migration M easily progresses while the ion migration M easily occurs through gas and moisture. Since it is interrupted by the barrier portion 7a of the frame 1a, it is possible to effectively suppress the occurrence of a short circuit between the terminals due to the ion migration M.
　また、本実施形態のＬＥＤパッケージ１０ａによれば、封止部５が一般的に長期の信頼性を有するシリコーン樹脂により形成されているので、封止部５の変色や劣化を抑制することができる。 Moreover, according to the LED package 10a of this embodiment, since the sealing part 5 is generally formed of a silicone resin having long-term reliability, discoloration and deterioration of the sealing part 5 can be suppressed. .
　《発明の実施形態２》
　図６は、実施形態１の図３及び図５に対応する本実施形態のＬＥＤパッケージ１０ｂの断面図である。なお、以下の各実施形態において、図１～図５と同じ部分については同じ符号を付して、その詳細な説明を省略する。 << Embodiment 2 of the Invention >>
FIG. 6 is a cross-sectional view of the LED package 10b of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment. In the following embodiments, the same portions as those in FIGS. 1 to 5 are denoted by the same reference numerals, and detailed description thereof is omitted.
　上記実施形態１では、フレームの正極端子及び負極端子の間に配置する部分の一部が突出したＬＥＤパッケージ１０ａを例示したが、本実施形態では、フレームの正極端子及び負極端子の間に配置する部分全体が突出したＬＥＤパッケージ１０ｂを例示する。 In the first embodiment, the LED package 10a in which a part of the portion disposed between the positive electrode terminal and the negative electrode terminal of the frame is projected is illustrated. However, in the present embodiment, the LED package 10a is disposed between the positive electrode terminal and the negative electrode terminal of the frame. The LED package 10b from which the whole part protruded is illustrated.
　ＬＥＤパッケージ１０ｂは、図６に示すように、枠状に設けられたフレーム１ｂと、フレーム１ｂの枠内に平面視で互いに離間するように設けられた正極端子２ａ及び負極端子２ｂと、フレーム１ｂの枠内に設けられ、正極端子２ａ及び負極端子２ｂに金属ワイヤー４ａ及び４ｂを介してそれぞれ接続されたＬＥＤチップ３ａと、フレーム１ｂの枠内に設けられ、ＬＥＤチップ３ａ、正極端子２ａ及び負極端子２ｂを覆う透明な封止部５とを備えている。 As shown in FIG. 6, the LED package 10b includes a frame 1b provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in the frame 1b so as to be separated from each other in plan view, and a frame 1b. The LED chip 3a connected to the positive electrode terminal 2a and the negative electrode terminal 2b via the metal wires 4a and 4b, respectively, and the LED chip 3a, the positive electrode terminal 2a and the negative electrode provided in the frame 1b. The transparent sealing part 5 which covers the terminal 2b is provided.
　フレーム１ｂは、図６に示すように、相対的に大きい矩形の枠体と相対的に小さい矩形の枠体とがその１辺で連結した略８の字状の枠状に形成され、その連結部分が外枠部分よりも低く、且つ正極端子２ａ及び負極端子２ｂから突出するように形成されている。そして、フレーム１ｂでは、上記連結部分の上部全体が障壁部７ｂになっていると共に、その他の構成が上記実施形態１のフレーム１ａと実質的に同じになっている。 As shown in FIG. 6, the frame 1 b is formed in an approximately 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof. The portion is formed lower than the outer frame portion and protrudes from the positive electrode terminal 2a and the negative electrode terminal 2b. In the frame 1b, the entire upper portion of the connecting portion is a barrier portion 7b, and other configurations are substantially the same as those of the frame 1a of the first embodiment.
　上記構成のＬＥＤパッケージ１０ｂは、正極端子２ａ及び負極端子２ｂを介してＬＥＤチップ３ａに電力を供給して、ＬＥＤチップ３ａで出射された青色光又は紫外光を、封止部５に含有する蛍光体６を介して白色光に変換することにより、外部に白色光を出射するように構成されている。そして、ＬＥＤパッケージ１０ｂでは、図６に示すように、ＬＥＤチップ３ａに対する電力の供給に伴って、正極端子２ａから負極端子２ｂ側に金属が析出して、イオンマイグレーションＭが発生しても、そのイオンマイグレーションＭの進行をフレーム１ｂの障壁部７ｂの側壁で遮断することができる。 The LED package 10b having the above configuration supplies power to the LED chip 3a through the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside. In the LED package 10b, as shown in FIG. 6, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7b of the frame 1b.
　以上説明したように、本実施形態のＬＥＤパッケージ１０ｂによれば、上記実施形態１と同様に、正極端子２ａ及び負極端子２ｂの間にフレーム１ｂの障壁部７ｂが設けられているので、イオンマイグレーションＭに起因する端子間における短絡の発生を容易に抑制することができる。 As described above, according to the LED package 10b of the present embodiment, the barrier portion 7b of the frame 1b is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first embodiment. Generation | occurrence | production of the short circuit between the terminals resulting from M can be suppressed easily.
　《発明の実施形態３》
　図７は、実施形態１の図３及び図５に対応する本実施形態のＬＥＤパッケージ１０ｃの断面図である。 << Embodiment 3 of the Invention >>
FIG. 7 is a cross-sectional view of the LED package 10c of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
　上記実施形態１及び２では、凸条の障壁部が形成されたフレームを備えたＬＥＤパッケージ１０ａ及び１０ｂを例示したが、本実施形態では、凹条の障壁部が形成されたフレーム１ｃを備えたＬＥＤパッケージ１０ｃを例示する。 In the first and second embodiments, the LED packages 10a and 10b including the frame in which the convex barrier portion is formed are illustrated. However, in the present embodiment, the frame 1c in which the concave barrier portion is formed is provided. The LED package 10c is illustrated.
　ＬＥＤパッケージ１０ｃは、図７に示すように、枠状に設けられたフレーム１ｃと、フレーム１ｃの枠内に平面視で互いに離間するように設けられた正極端子２ａ及び負極端子２ｂと、フレーム１ｃの枠内に設けられ、正極端子２ａ及び負極端子２ｂに金属ワイヤー４ａ及び４ｂを介してそれぞれ接続されたＬＥＤチップ３ａと、フレーム１ｃの枠内に設けられ、ＬＥＤチップ３ａ、正極端子２ａ及び負極端子２ｂを覆う透明な封止部５とを備えている。 As shown in FIG. 7, the LED package 10c includes a frame 1c provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1c so as to be separated from each other in plan view, and a frame 1c. LED chip 3a connected to positive electrode terminal 2a and negative electrode terminal 2b via metal wires 4a and 4b, respectively, and frame 1c, LED chip 3a, positive electrode terminal 2a and negative electrode The transparent sealing part 5 which covers the terminal 2b is provided.
　フレーム１ｃは、図７に示すように、相対的に大きい矩形の枠体と相対的に小さい矩形の枠体とがその１辺で連結した略８の字状の枠状に形成され、その連結部分が外枠部分よりも低く形成され、その連結部分の上部に凹条の障壁部７ｃを有し、その他の構成が上記実施形態１のフレーム１ａと実質的に同じになっている。 As shown in FIG. 7, the frame 1 c is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof. The portion is formed to be lower than the outer frame portion, has a concave barrier portion 7c at the upper portion of the connecting portion, and other configurations are substantially the same as the frame 1a of the first embodiment.
　上記構成のＬＥＤパッケージ１０ｃは、正極端子２ａ及び負極端子２ｂを介してＬＥＤチップ３ａに電力を供給して、ＬＥＤチップ３ａで出射された青色光又は紫外光を、封止部５に含有する蛍光体６を介して白色光に変換することにより、外部に白色光を出射するように構成されている。そして、ＬＥＤパッケージ１０ｃでは、図７に示すように、ＬＥＤチップ３ａに対する電力の供給に伴って、正極端子２ａから負極端子２ｂ側に金属が析出して、イオンマイグレーションＭが発生しても、そのイオンマイグレーションＭの進行をフレーム１ｃの障壁部７ｃの側壁で遮断することができる。 The LED package 10c having the above configuration supplies power to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3a in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside. In the LED package 10c, as shown in FIG. 7, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7c of the frame 1c.
　以上説明したように、本実施形態のＬＥＤパッケージ１０ｃによれば、上記実施形態１及び２と同様に、正極端子２ａ及び負極端子２ｂの間にフレーム１ｃの障壁部７ｃが設けられているので、イオンマイグレーションＭに起因する端子間における短絡の発生を容易に抑制することができる。 As described above, according to the LED package 10c of the present embodiment, the barrier portion 7c of the frame 1c is provided between the positive terminal 2a and the negative terminal 2b as in the first and second embodiments. Generation | occurrence | production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
　《発明の実施形態４》
　図８は、実施形態１の図３及び図５に対応する本実施形態のＬＥＤパッケージ１０ｄの断面図である。 << Embodiment 4 of the Invention >>
FIG. 8 is a cross-sectional view of the LED package 10d of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
　上記実施形態１～３では、凸条又は凹条の障壁部が形成されたフレームを備えたＬＥＤパッケージ１０ａ～１０ｃを例示したが、本実施形態では、凸条及び凹条の双方の障壁部が形成されたフレーム１ｄを備えたＬＥＤパッケージ１０ｄを例示する。 In the first to third embodiments, the LED packages 10a to 10c including the frame in which the protruding or recessed barrier portions are formed are exemplified. However, in the present embodiment, both the protruding and recessed barrier portions are provided. An LED package 10d including the formed frame 1d is illustrated.
　ＬＥＤパッケージ１０ｄは、図８に示すように、枠状に設けられたフレーム１ｄと、フレーム１ｄの枠内に平面視で互いに離間するように設けられた正極端子２ａ及び負極端子２ｂと、フレーム１ｄの枠内に設けられ、正極端子２ａ及び負極端子２ｂに金属ワイヤー４ａ及び４ｂを介してそれぞれ接続されたＬＥＤチップ３ａと、フレーム１ｄの枠内に設けられ、ＬＥＤチップ３ａ、正極端子２ａ及び負極端子２ｂを覆う透明な封止部５とを備えている。 As shown in FIG. 8, the LED package 10d includes a frame 1d provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1d so as to be separated from each other in plan view, and a frame 1d. LED chip 3a connected to the positive electrode terminal 2a and negative electrode terminal 2b via metal wires 4a and 4b, respectively, and a frame 1d provided to the LED chip 3a, positive electrode terminal 2a and negative electrode The transparent sealing part 5 which covers the terminal 2b is provided.
　フレーム１ｄは、図８に示すように、相対的に大きい矩形の枠体と相対的に小さい矩形の枠体とがその１辺で連結した略８の字状の枠状に形成され、その連結部分が外枠部分よりも低く形成され、その連結部分の上部に凸条に形成された部分７ｄａ及び凹条に形成された部分７ｄｂを備えた障壁部７ｄを有し、その他の構成が上記実施形態１のフレーム１ａと実質的に同じになっている。 As shown in FIG. 8, the frame 1 d is formed in a substantially 8-shaped frame shape in which a relatively large rectangular frame and a relatively small rectangular frame are connected at one side thereof. The portion is formed lower than the outer frame portion, and has a barrier portion 7d having a portion 7da formed on the upper portion of the connecting portion and a portion 7db formed on the concave portion, and the other configuration is as described above. It is substantially the same as the frame 1a of the first embodiment.
　上記構成のＬＥＤパッケージ１０ｄは、正極端子２ａ及び負極端子２ｂを介してＬＥＤチップ３ａに電力を供給して、ＬＥＤチップ３ａで出射された青色光又は紫外光を、封止部５に含有する蛍光体６を介して白色光に変換することにより、外部に白色光を出射するように構成されている。そして、ＬＥＤパッケージ１０ｄでは、図８に示すように、ＬＥＤチップ３ａに対する電力の供給に伴って、正極端子２ａから負極端子２ｂ側に金属が析出して、イオンマイグレーションＭが発生しても、そのイオンマイグレーションＭの進行をフレーム１ｃの障壁部７ｄを構成する凸条に形成された部分７ｄａ及び凹条に形成された部分７ｄｂの各側壁で遮断することができる。 The LED package 10d having the above configuration supplies fluorescent light to the LED chip 3a via the positive electrode terminal 2a and the negative electrode terminal 2b, and contains blue light or ultraviolet light emitted from the LED chip 3a in the sealing portion 5. By converting to white light through the body 6, white light is emitted to the outside. In the LED package 10d, as shown in FIG. 8, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3a, The progress of the ion migration M can be blocked by the side walls of the portion 7da formed on the protrusions and the portion 7db formed on the recesses constituting the barrier portion 7d of the frame 1c.
　以上説明したように、本実施形態のＬＥＤパッケージ１０ｄによれば、上記実施形態１～３と同様に、正極端子２ａ及び負極端子２ｂの間にフレーム１ｄの障壁部７ｄが設けられているので、イオンマイグレーションＭに起因する端子間における短絡の発生を容易に抑制することができる。 As described above, according to the LED package 10d of the present embodiment, the barrier portion 7d of the frame 1d is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first to third embodiments. Generation | occurrence | production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
　《発明の実施形態５》
　図９は、実施形態１の図３及び図５に対応する本実施形態のＬＥＤパッケージ１０ｅの断面図である。 << Embodiment 5 of the Invention >>
FIG. 9 is a cross-sectional view of the LED package 10e of the present embodiment corresponding to FIGS. 3 and 5 of the first embodiment.
　上記実施形態１～４では、正極電極及び負極電極が上面に形成されたＬＥＤチップを備えたＬＥＤパッケージ１０ａ～１０ｄを例示したが、本実施形態では、負極電極だけが上面に形成されたＬＥＤチップを備えたＬＥＤパッケージ１０ｅを例示する。 In the first to fourth embodiments, the LED packages 10a to 10d including the LED chip having the positive electrode and the negative electrode formed on the upper surface are exemplified. However, in the present embodiment, the LED chip having only the negative electrode formed on the upper surface. The LED package 10e provided with is illustrated.
　ＬＥＤパッケージ１０ｅは、図９に示すように、枠状に設けられたフレーム１ａと、フレーム１ａの枠内に平面視で互いに離間するように設けられた正極端子２ａ及び負極端子２ｂと、フレーム１ａの枠内に設けられ、正極端子２ａ及び負極端子２ｂに導電性接着剤（不図示）及び金属ワイヤー４ｂを介してそれぞれ接続されたＬＥＤチップ３ｂと、フレーム１ａの枠内に設けられ、ＬＥＤチップ３ｂ、正極端子２ａ及び負極端子２ｂを覆う透明な封止部５とを備えている。 As shown in FIG. 9, the LED package 10e includes a frame 1a provided in a frame shape, a positive electrode terminal 2a and a negative electrode terminal 2b provided in a frame of the frame 1a so as to be separated from each other in plan view, and a frame 1a. LED chip 3b connected to the positive electrode terminal 2a and the negative electrode terminal 2b via a conductive adhesive (not shown) and a metal wire 4b, and an LED chip provided in the frame 1a. 3b, and a transparent sealing portion 5 that covers the positive electrode terminal 2a and the negative electrode terminal 2b.
　ＬＥＤチップ３ｂは、上記導電性接着剤を介して正極端子２ａ上に固定され、その下面に正極端子２ａが接続される正極電極、及びその上面に負極端子２ｂが接続される負極電極を有し、化合物半導体が積層されたチップ本体に上記正極電極及び負極電極を介して電力を供給することにより、所定の色の光を出射するように構成されている。 The LED chip 3b is fixed on the positive electrode terminal 2a via the conductive adhesive, and has a positive electrode connected to the lower surface of the positive electrode terminal 2a and a negative electrode connected to the upper surface of the negative electrode terminal 2b. By supplying power to the chip body on which the compound semiconductor is laminated via the positive electrode and the negative electrode, light of a predetermined color is emitted.
　上記構成のＬＥＤパッケージ１０ｅは、正極端子２ａ及び負極端子２ｂを介してＬＥＤチップ３ｂに電力を供給して、ＬＥＤチップ３ｂで出射された青色光又は紫外光を、封止部５に含有する蛍光体６を介して白色光に変換することにより、外部に白色光を出射するように構成されている。そして、ＬＥＤパッケージ１０ｅでは、図９に示すように、ＬＥＤチップ３ｂに対する電力の供給に伴って、正極端子２ａから負極端子２ｂ側に金属が析出して、イオンマイグレーションＭが発生しても、そのイオンマイグレーションＭの進行をフレーム１ａの障壁部７ａの側壁で遮断することができる。 The LED package 10e configured as described above supplies power to the LED chip 3b via the positive electrode terminal 2a and the negative electrode terminal 2b, and the fluorescent light containing blue light or ultraviolet light emitted from the LED chip 3b in the sealing unit 5 By converting to white light through the body 6, white light is emitted to the outside. In the LED package 10e, as shown in FIG. 9, even if the metal is deposited from the positive electrode terminal 2a to the negative electrode terminal 2b side with the supply of power to the LED chip 3b, The progress of the ion migration M can be blocked by the side wall of the barrier portion 7a of the frame 1a.
　以上説明したように、本実施形態のＬＥＤパッケージ１０ｅによれば、上記実施形態１～４と同様に、正極端子２ａ及び負極端子２ｂの間にフレーム１ａの障壁部７ａが設けられているので、イオンマイグレーションＭに起因する端子間における短絡の発生を容易に抑制することができる。 As described above, according to the LED package 10e of the present embodiment, the barrier portion 7a of the frame 1a is provided between the positive electrode terminal 2a and the negative electrode terminal 2b as in the first to fourth embodiments. Generation | occurrence | production of the short circuit between the terminals resulting from the ion migration M can be suppressed easily.
　また、本実施形態のＬＥＤパッケージ１０ｅによれば、ＬＥＤチップ３ｂを正極端子２ａ上に導電性接着剤を介して載置することにより、ＬＥＤチップ３ｂと正極端子２ａとを接続することができるので、ワイヤーボンディングによる接続が負極端子２ｂ側だけになり、コスト低減を図ることができる。 Further, according to the LED package 10e of the present embodiment, the LED chip 3b and the positive electrode terminal 2a can be connected by placing the LED chip 3b on the positive electrode terminal 2a via a conductive adhesive. The connection by wire bonding is only on the negative electrode terminal 2b side, and the cost can be reduced.
　なお、本実施形態では、上記実施形態１のＬＥＤパッケージ１０ａを構成するフレーム１ａの枠内にＬＥＤチップ３ｂを配置する構成を例示したが、上記実施形態２～４のＬＥＤパッケージ１０ｂ～１０ｄを構成するフレーム１ｂ～１ｄの枠内にＬＥＤチップ３ｂを配置する構成としてもよい。 In the present embodiment, the configuration in which the LED chip 3b is disposed within the frame 1a that constitutes the LED package 10a of the first embodiment is illustrated. However, the LED packages 10b to 10d of the second to fourth embodiments are configured. Alternatively, the LED chip 3b may be arranged in the frames 1b to 1d.
　また、上記各実施形態では、封止部５に蛍光体６を含有させることにより、白色光を出射するように構成されたＬＥＤパッケージ１０ａ～１０ｅを例示したが、封止部に蛍光体を含有させずに、赤色光を出射するように構成されたＬＥＤパッケージ、緑色光を出射するように構成されたＬＥＤパッケージ、及び青色光を出射するように構成されたＬＥＤパッケージを組み合わせて、３つのＬＥＤパッケージ全体で白色光を出射するように構成されていてもよい。 Further, in each of the above embodiments, the LED packages 10a to 10e configured to emit white light by including the phosphor 6 in the sealing portion 5 are exemplified, but the phosphor is included in the sealing portion. 3 LEDs by combining an LED package configured to emit red light, an LED package configured to emit green light, and an LED package configured to emit blue light The entire package may be configured to emit white light.
　また、上記各実施形態では、フレームの一部で障壁部が形成されたＬＥＤパッケージ１０ａ～１０ｅを例示したが、障壁部は、他の絶縁性を有する部材で形成されていてもよい。 Further, in each of the above embodiments, the LED packages 10a to 10e in which the barrier portion is formed in a part of the frame are exemplified, but the barrier portion may be formed of other insulating members.
　また、上記各実施形態では、ＬＥＤチップを備えたＬＥＤパッケージを例示したが、本発明は、他のチップ部品を備えた電子素子パッケージにも適用することができる。 In each of the above embodiments, an LED package including an LED chip is illustrated, but the present invention can also be applied to an electronic device package including another chip component.
　また、上記各実施形態では、液晶表示装置のバックライトに用いるＬＥＤパッケージを例示したが、本発明は、照明器具などに用いるＬＥＤパッケージにも適用することができる。 In each of the above embodiments, the LED package used for the backlight of the liquid crystal display device is exemplified. However, the present invention can also be applied to an LED package used for a lighting fixture or the like.
　以上説明したように、本発明は、ＬＥＤパッケージにおいて、イオンマイグレーションに起因する端子間の短絡を抑制することができるので、液晶表示装置や照明器具などについて有用である。 As described above, the present invention is useful for a liquid crystal display device, a lighting fixture, and the like because it can suppress a short circuit between terminals caused by ion migration in an LED package.
１ａ～１ｄ　　フレーム
２ａ　　正極端子（一対の端子の一方の端子）
２ｂ　　負極端子（一対の端子の他方の端子）
３ａ，３ｂ　　ＬＥＤチップ
５　　　封止部
６　　　蛍光体
７ａ～７ｄ　　障壁部
１０ａ～１０ｅ　　ＬＥＤパッケージ 1a to 1d Frame 2a Positive terminal (one terminal of a pair of terminals)
2b Negative terminal (the other terminal of a pair of terminals)
3a, 3b LED chip 5 Sealing part 6 Phosphors 7a to 7d Barrier parts 10a to 10e LED package

Claims (8)

  1. 　枠状に設けられたフレームと、
    　上記フレームの枠内に平面視で互いに離間するように設けられ、外部に接続可能な一対の端子と、
    　上記フレームの枠内に設けられ、上記一対の端子にそれぞれ接続された発光ダイオードチップと、
    　上記フレームの枠内に設けられ、上記発光ダイオードチップ及び一対の端子を覆う透明な封止部とを備えた発光ダイオードパッケージであって、
    　上記フレームは、上記一対の端子の間において、該一対の端子の離間する方向と交差する方向に延びるように、該一対の端子の表面に対して段差が形成された障壁部を有していることを特徴とする発光ダイオードパッケージ。     A frame provided in a frame shape;
    A pair of terminals provided in the frame of the frame so as to be separated from each other in plan view and connectable to the outside;
    A light-emitting diode chip provided in the frame and connected to the pair of terminals;
    A light emitting diode package provided in a frame of the frame, and including a light emitting diode chip and a transparent sealing portion covering a pair of terminals,
    The frame has a barrier portion formed with a step with respect to the surface of the pair of terminals so as to extend in a direction intersecting with a direction in which the pair of terminals are separated between the pair of terminals. A light emitting diode package characterized by that.
  2. 　請求項１に記載された発光ダイオードパッケージにおいて、
    　上記障壁部は、凸条に形成されていることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to claim 1, wherein
    The light-emitting diode package, wherein the barrier portion is formed in a convex shape.
  3. 　請求項１に記載された発光ダイオードパッケージにおいて、
    　上記障壁部は、凹条に形成されていることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to claim 1, wherein
    The light-emitting diode package, wherein the barrier portion is formed in a concave shape.
  4. 　請求項１に記載された発光ダイオードパッケージにおいて、
    　上記障壁部は、凸条に形成された部分と、該部分に隣り合うように凹条に形成された部分とを有していることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to claim 1, wherein
    The said barrier part has the part formed in the protruding item | line, and the part formed in the grooved item adjacent to this part, The light emitting diode package characterized by the above-mentioned.
  5. 　請求項１乃至４の何れか１つに記載された発光ダイオードパッケージにおいて、
    　上記フレームは、白色の樹脂により形成されていることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to any one of claims 1 to 4,
    The light emitting diode package, wherein the frame is made of a white resin.
  6. 　請求項１乃至５の何れか１つに記載された発光ダイオードパッケージにおいて、
    　上記発光ダイオードチップは、上記一対の端子の一方の端子上に設けられていることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to any one of claims 1 to 5,
    The light emitting diode package, wherein the light emitting diode chip is provided on one terminal of the pair of terminals.
  7. 　請求項１乃至６の何れか１つに記載された発光ダイオードパッケージにおいて、
    　上記封止部は、シリコーン樹脂により形成されていることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to any one of claims 1 to 6,
    The light emitting diode package, wherein the sealing portion is made of a silicone resin.
  8. 　請求項１乃至７の何れか１つに記載された発光ダイオードパッケージにおいて、
    　上記封止部には、上記光ダイオードチップで出射した光を白色光に変換するための蛍光体が含まれていることを特徴とする発光ダイオードパッケージ。     The light emitting diode package according to any one of claims 1 to 7,
    The light emitting diode package, wherein the sealing portion contains a phosphor for converting light emitted from the photodiode chip into white light.
PCT/JP2011/004301 2010-08-20 2011-07-28 Light emitting diode package WO2012023246A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463705B (en) * 2012-12-18 2014-12-01 玉晶光電股份有限公司 Light emitting device

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