WO2012017568A1 - Pellicule adhésive et ruban pour traitement de plaquette de semi-conducteur - Google Patents

Pellicule adhésive et ruban pour traitement de plaquette de semi-conducteur Download PDF

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Publication number
WO2012017568A1
WO2012017568A1 PCT/JP2010/070073 JP2010070073W WO2012017568A1 WO 2012017568 A1 WO2012017568 A1 WO 2012017568A1 JP 2010070073 W JP2010070073 W JP 2010070073W WO 2012017568 A1 WO2012017568 A1 WO 2012017568A1
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Prior art keywords
adhesive layer
pressure
sensitive adhesive
weight
semiconductor wafer
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PCT/JP2010/070073
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English (en)
Japanese (ja)
Inventor
真沙美 青山
石渡 伸一
泰正 盛島
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古河電気工業株式会社
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Priority claimed from JP2010176798A external-priority patent/JP4845065B2/ja
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to CN201080005501.9A priority Critical patent/CN102511077B/zh
Priority to KR1020117017581A priority patent/KR101143109B1/ko
Publication of WO2012017568A1 publication Critical patent/WO2012017568A1/fr

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to an adhesive film and a semiconductor wafer processing tape used to manufacture a semiconductor device by cutting a semiconductor wafer into semiconductor chips.
  • the semiconductor wafer processing tape is cut (diced) into chips using a dicing blade, the semiconductor wafer processing tape is expanded, A step of picking up the cut chip from the adhesive layer together with the adhesive layer, a step of mounting the chip on the substrate via the adhesive layer attached to the chip, a reflow furnace after sealing the chip adhered to the substrate etc. The step of passing through is performed.
  • an object of the present invention is to reflow cracks in the package even when the adhesive layer is familiar with the adhesive layer and the chip is picked up while the adhesive is attached to the adhesive layer.
  • An object of the present invention is to provide a pressure-sensitive adhesive film and a semiconductor wafer processing tape that can reduce the occurrence.
  • the pressure-sensitive adhesive film of the present invention comprises a base film and a pressure-sensitive adhesive layer provided on the base film, and is a pressure-sensitive adhesive film used for processing a semiconductor wafer, which has a differential heat.
  • the weight loss of the pressure-sensitive adhesive layer at the reflow temperature measured by analysis is 1.5% or less.
  • the pressure-sensitive adhesive layer at 260 ° C. comprises a base film and a pressure-sensitive adhesive layer provided on the base film, and is used for processing a semiconductor wafer, and is measured by differential thermal analysis.
  • the weight loss is 1.5% or less.
  • the tape for semiconductor wafer processing of this invention is provided on the adhesive film which consists of a base film and the adhesive layer provided on this base film, and the said adhesive layer.
  • the semiconductor wafer processing tape of the present invention has a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, and an adhesive layer provided on the pressure-sensitive adhesive layer.
  • the semiconductor wafer processing tape of the present invention is characterized in that the pressure-sensitive adhesive layer has a weight average molecular weight of 1 million or more.
  • the pressure-sensitive adhesive layer contains a photopolymerization initiator, and the thermal decomposition start temperature of the photopolymerization initiator is 260 ° C. or higher.
  • the pressure-sensitive adhesive film and the semiconductor wafer processing tape of the present invention reduce the occurrence of reflow cracks in the package even when the pressure-sensitive adhesive is picked up while adhering to the adhesive layer when picking up the chip. be able to.
  • FIG. 1 It is sectional drawing which shows an example of the tape for semiconductor wafer processing of this invention.
  • A is sectional drawing which shows the state by which the semiconductor wafer W and the ring frame were bonded together on the semiconductor wafer processing tape
  • (b) is sectional drawing which shows the semiconductor wafer processing tape and semiconductor wafer after dicing
  • (C) is a sectional view showing a semiconductor wafer processing tape and a semiconductor wafer after expansion.
  • the semiconductor wafer processing tape 15 has an adhesive film 14 in which an adhesive layer 12 is laminated on a base film 11. It is a dicing die bonding film in which an adhesive layer 13 is laminated.
  • the pressure-sensitive adhesive layer 12 and the adhesive layer 13 may be cut (pre-cut) into a predetermined shape in advance according to the use process and the apparatus.
  • the adhesive layer 13 pre-cut according to the wafer W see FIG. 2A
  • the adhesive layer 13 is present at the portion where the wafer W is bonded, and the ring frame 20 for dicing (FIG. 2).
  • the semiconductor wafer processing tape 15 of the present invention includes a form in which the wafer is cut and laminated for each wafer, and a form in which a plurality of long sheets formed by winding the wafer are wound into a roll. Below, the base film 11, the adhesive layer 12, and the adhesive layer 13 are each demonstrated in detail.
  • ⁇ Base film> Although it does not specifically limit as a material which comprises a base film, It is preferable to be selected from polyolefin and polyvinyl chloride.
  • the surface roughness Ra of the surface in contact with the adhesive is preferably 1 ⁇ m or less, more preferably 0.5 ⁇ m or less. By making the surface roughness Ra 1 ⁇ m or less, the contact area with the pressure-sensitive adhesive can be increased, and the pressure-sensitive adhesive can be prevented from peeling off from the base film.
  • polystyrene resin examples include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid.
  • polystyrene resin examples include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid.
  • ⁇ -olefins examples include homopolymers or copolymers of ⁇ -olefins such as methyl copolymers, ethylene-acrylic acid copolymers, and ionomers, or mixtures thereof.
  • the substrate film is preferably radiation transmissive.
  • the thickness of the base film is preferably 50 to 300 ⁇ m from the viewpoint of ensuring strength and chip pick-up properties.
  • the base film may be a single layer or may be composed of a plurality of layers.
  • the pressure-sensitive adhesive layer can be produced by applying a pressure-sensitive adhesive on the base film.
  • a pressure-sensitive adhesive layer There is no restriction
  • the pressure-sensitive adhesive layer is preferably radiation-curable.
  • chlorinated polypropylene resins acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition reaction type organopolysiloxane resins, silicon acrylate resins, ethylene-vinyl acetate copolymers, ethylene- Radiation polymerization of ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, various elastomers such as polyisoprene, styrene / butadiene copolymer and hydrogenated products, and mixtures thereof It is preferable to prepare a pressure-sensitive adhesive by appropriately mixing an adhesive compound. Various surfactants and surface smoothing agents may be added.
  • the thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 1 to 30 ⁇ m.
  • the polymerizable compound is, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation, or a photopolymerizable carbon-carbon double bond group as a substituent.
  • acrylate, polyethylene glycol diacrylate, oligoester acrylate, silicon acrylate, etc., acrylic acid, copolymers of various acrylic esters, and the like are applicable.
  • Urethane acrylate oligomers include polyester compounds or polyether compounds such as polyol compounds and polyisocyanate compounds (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene).
  • the pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins.
  • the above-mentioned pressure-sensitive adhesive materials have a molecular structure with as many nonpolar groups as possible, such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group, with a surface free energy of 40 mJ / m 2 or less. It is desirable to include.
  • the resin for the pressure-sensitive adhesive layer contains, as appropriate, an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent, etc. in addition to the radiation polymerizable compound that cures the pressure-sensitive adhesive layer by irradiating the base film with radiation.
  • An adhesive can also be prepared.
  • photopolymerization initiator for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used.
  • the blending amount of these photopolymerization initiators is preferably 0.01 to 30 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the acrylic copolymer.
  • the gel fraction is desirably high and is usually 60% or more, preferably 70% or more.
  • the pressure-sensitive adhesive layer has a weight loss of 1.5% or less at the reflow temperature measured by differential thermal analysis (TG-DTA).
  • the reflow temperature is the peak temperature (Tp: peak package body temperature) of the package body, and the semiconductor engineering association (JEDEC: Joint Electron Device Engineering Council) defines the classification temperature (Tc: classification temperature). Uses the classification temperature as the peak temperature.
  • the weight reduction of the pressure-sensitive adhesive layer is a weight reduction of the pressure-sensitive adhesive layer in a state where reflow is performed. That is, in the case of a radiation-curable pressure-sensitive adhesive layer, reflow is performed after irradiation and curing, so that the weight loss when the pressure-sensitive adhesive in this state is heated at the reflow temperature for a required time is 1.
  • the weight loss when heated for the required time at the reflow temperature of the pressure-sensitive adhesive layer is 1.5% or less, even if reflow is performed with the pressure-sensitive adhesive attached to the adhesive layer, the pressure-sensitive adhesive will be thermally decomposed. The accompanying outgas generation is suppressed. As a result, the occurrence of reflow cracks can be reduced. Since the reflow temperature of lead-free solder is about 260 ° C., the weight loss at 260 ° C. of the pressure-sensitive adhesive layer measured by differential thermal analysis (TG-DTA) is preferably 1.5% or less.
  • the glass transition temperature Tg of the base polymer of the pressure-sensitive adhesive is set to ⁇ 50 ° C. or higher, or the weight average molecular weight of the pressure-sensitive adhesive layer is set to 1 million or higher. Good. Furthermore, you may combine making the decomposition temperature of a photoinitiator 260 degreeC or more.
  • ⁇ Adhesive layer> When the chip is picked up after the semiconductor wafer is bonded and cut, the adhesive layer is peeled off from the adhesive layer and attached to the chip, and the chip is attached to the package substrate or lead frame. It functions as a bonding film when it is fixed to.
  • the adhesive layer is a film in which an adhesive is formed in advance.
  • the acrylic copolymer and the epoxy resin are included, and the acrylic copolymer has a Tg of 10 ° C. or higher.
  • the adhesive layer is not particularly limited, but is usually preferably about 5 to 100 ⁇ m.
  • the epoxy resin is not particularly limited as long as it cures and exhibits an adhesive action, but an epoxy resin having two or more functional groups, preferably having a molecular weight of less than 5000, more preferably less than 3000 can be used. Further, an epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more can be used.
  • bisphenol A type epoxy resin bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy Resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products, halides, hydrogenated products, etc. And a novolak-type epoxy resin.
  • a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin can also be applied. These can be used alone or in combination of two or more.
  • components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.
  • an epoxy group-containing acrylic copolymer for example, an epoxy group-containing acrylic copolymer can be used.
  • the epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive strength, 0.5% by weight or more is preferable, and gelation can be suppressed if it is 6% by weight or less.
  • the amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in the present invention, the epoxy group-containing acrylic copolymer refers to a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by weight based on the obtained copolymer. .
  • the remainder can be a mixture of an alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, an alkyl methacrylate, and styrene or acrylonitrile.
  • ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable.
  • the mixing ratio is preferably adjusted in consideration of the Tg of the copolymer.
  • limiting in particular in a polymerization method For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods.
  • the weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3,000,000, and 500,000 to 2,000,000. Is more preferable.
  • a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).
  • the inorganic filler there are no particular restrictions on the inorganic filler.
  • examples thereof include boron, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.
  • aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable.
  • Silica is preferable from the viewpoint of balance of properties.
  • the average particle size of the filler is preferably 0.002 to 2 ⁇ m, more preferably 0.008 to 0.5 ⁇ m, and still more preferably 0.01 to 0.05 ⁇ m. If the average particle size of the filler is less than 0.002 ⁇ m, the wettability to the adherend tends to decrease, and the adhesion tends to decrease. If the average particle size exceeds 2 ⁇ m, the reinforcing effect due to the addition of the filler decreases and the heat resistance decreases. Tend to.
  • the average particle diameter means an average value obtained from the particle diameters of 100 fillers measured by TEM, SEM or the like.
  • the wafer processing tape 15 is sucked and supported from the surface of the base film 12 by the suction stage 22, and the semiconductor wafer W is mechanically cut using a blade (not shown) and divided into a plurality of semiconductor chips C (FIG. 2). (B)). At this time, the adhesive layer 13, the pressure-sensitive adhesive layer 12, and a part of the base film 11 are also appropriately diced.
  • the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with radiation from the lower surface of the base film 11. Since the adhesive force of the cured adhesive layer 12 is reduced, the adhesive layer 13 on the adhesive layer 12 can be peeled off.
  • the pressure-sensitive adhesive layer is composed of a plurality of layers, it is not necessary to cure the entire pressure-sensitive adhesive layer in order to peel the adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure-sensitive adhesive layer portion corresponding to the wafer is formed. It may be cured.
  • the semiconductor wafer processing tape 15 holding the plurality of divided semiconductor chips C is placed on the stage 21 of the expanding apparatus. Then, as shown in FIG. 2C, the hollow cylindrical push-up member 23 is raised from the lower surface side of the semiconductor wafer processing tape 15, and the base film 11 is moved in the radial direction and the circumferential direction of the ring frame 20. Enlarge.
  • a picking up step for picking up the chip C is carried out with the adhesive film expanded. Specifically, the chip is pushed up from the lower side of the adhesive film 14 by a pin (not shown), and the chip C is adsorbed by an adsorption jig (not shown) from the upper surface side of the adhesive film 14 so as to be separated into individual pieces. The chip C is picked up together with the adhesive layer 13.
  • the die bonding process is performed. Specifically, the semiconductor chip is bonded to a lead frame, a package substrate, or the like by an adhesive layer picked up together with the chip C in the pickup process.
  • the solder such as a solder ball disposed on the semiconductor chip is melted and the semiconductor chip and the substrate are connected with each other through a reflow furnace.
  • a semiconductor device is obtained.
  • the pressure-sensitive adhesive layer was 1.5% or less in weight loss of the pressure-sensitive adhesive layer at the reflow temperature measured by differential thermal analysis, so that the reflow was performed with the pressure-sensitive adhesive attached to the adhesive layer. Moreover, generation
  • the pressure-sensitive adhesive composition was adhered onto a 100 ⁇ m-thick ethylene-vinyl acetate copolymer film (base film) so that the thickness after drying of the pressure-sensitive adhesive composition was 10 ⁇ m.
  • Agent compositions 1 to 9 were applied, dried at 110 ° C. for 3 minutes, and then allowed to stand in an environment of 23 ⁇ 5 ° C. and 45% for 3 weeks to obtain an adhesive film.
  • adhesive compositions 1 and 2 were prepared, and the adhesive compositions 1 and 2 were applied to a release liner made of a polyethylene-terephthalate film from which the adhesive composition was released so that the thickness after drying was 20 ⁇ m. Each was coated and dried at 110 ° C.
  • Adhesive composition 1 In 400 g of toluene as a solvent, 340 g of isooctyl acrylate, 13 g of methyl methacrylate, 60 g of hydroxy acrylate, 0.5 g of methacrylic acid, and a mixed solution of benzoyl peroxide as a polymerization initiator are appropriately adjusted in a dropping amount, and reaction temperature is added. And reaction time was adjusted and the solution of the compound (1) of the weight average molecular weight 800,000 was obtained. The Tg of compound (1) was measured by differential scanning calorimetry (DSC) and found to be ⁇ 49 ° C.
  • DSC differential scanning calorimetry
  • Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd.
  • a pressure-sensitive adhesive composition 1 was obtained by adding parts and stirring.
  • Adhesive composition 2 To the solution of the above compound (1), 2.5 g of 2-isocyanatoethyl methacrylate as a compound having a radiation curable carbon-carbon double bond and a functional group and hydroquinone as a polymerization inhibitor were appropriately adjusted in the amount of dripping. In addition, the reaction temperature and reaction time were adjusted to obtain a solution of the compound (2) having a radiocurable carbon-carbon double bond. The Tg of compound (2) was measured by DSC and found to be -49 ° C.
  • Coronate L as a polyisocyanate
  • Irgacure 184 manufactured by Ciba Geigy Japan
  • 1 part by weight and 300 parts by weight of ethyl acetate as a solvent were added and stirred to obtain an adhesive composition 2.
  • Adhesive composition 3 In 400 g of toluene as a solvent, 340 g of isooctyl acrylate, 3 g of methyl methacrylate, 60 g of hydroxy acrylate, 0.5 g of methacrylic acid, and a mixed solution of benzoyl peroxide as a polymerization initiator are appropriately adjusted in a dropping amount, and reaction temperature is added.
  • Adhesive composition 4 In 400 g of toluene, 443 g of n-butyl acrylate, 80 g of methyl methacrylate, 100 g of hydroxy acrylate, 7 g of methacrylic acid, and a mixed solution of benzoyl peroxide as a polymerization initiator are added in an appropriately adjusted drop amount, and the reaction temperature and reaction time are added.
  • Adhesive composition 5 0.7 parts by weight of Coronate L as a polyisocyanate is added to 100 parts by weight of the compound (4) in the solution, and 1 part by weight of Irgacure 2959 as a photopolymerization initiator is used as a solvent. 300 parts by weight of ethyl acetate was added and stirred to obtain an adhesive composition 5.
  • Adhesive composition 6 In 400 g of toluene as a solvent, 200 g of lauryl acrylate, 100 g of 2-ethylhexyl acrylate, 10 g of methacrylic acid, and a mixed solution of benzoyl peroxide as a polymerization initiator are added by appropriately adjusting the dropping amount, and the reaction temperature and reaction time are adjusted. Then, after obtaining a compound having a weight average molecular weight of 800,000, 2.5 g of 2-isocyanatoethyl methacrylate as a compound having a radiation curable carbon-carbon double bond and a functional group, and hydroquinone as a polymerization inhibitor are appropriately added dropwise.
  • Adhesive composition 7 In 400 g of toluene as a solvent, 340 g of n-butyl acrylate, 70 g of hydroxy acrylate, 3.5 g of methacrylic acid, and a mixed solution of benzoyl peroxide as a polymerization initiator are added by appropriately adjusting the dropping amount, and the reaction temperature and reaction time are adjusted.
  • Adhesive composition 8 A mixture of 340 g of n-butyl acrylate, 13 g of methyl methacrylate, 7 g of hydroxy acrylate, 0.5 g of methacrylic acid, and benzoyl peroxide as a polymerization initiator was added to 400 g of toluene as a solvent, and the reaction amount was appropriately adjusted. The temperature and reaction time were adjusted to obtain a solution of the compound (7) having a weight average molecular weight of 50,000. The Tg of compound (7) was measured by DSC and found to be -52 ° C.
  • the thermal decomposition initiation temperature of each photopolymerization initiator was 260 ° C. or higher only for Irgacure 2959, and Irgacure 907, 651, and 184 were less than 260 ° C.
  • Adhesive composition 1 15 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 70 parts by weight of an acrylic resin (mass average molecular weight: 800,000, glass transition temperature ⁇ 17 ° C.), phenol as a curing agent 15 parts by weight of novolak resin (hydroxyl equivalent 104, softening point 80 ° C.) and 1 part of Curesol 2PZ (trade name: 2-phenylimidazole, manufactured by Shikoku Kasei Co., Ltd.) as an accelerator are stirred in an organic solvent. An adhesive composition 1 was obtained.
  • a cresol novolac type epoxy resin epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.
  • an acrylic resin mass average molecular weight: 800,000, glass transition temperature ⁇ 17 ° C.
  • phenol as a curing agent
  • novolak resin hydroxyl equivalent 104
  • Adhesive composition 2 5 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 0.5 part by mass of 3-glycidoxypropyltrimethoxysilane as an silane coupling agent, an average particle size of 1.
  • the sample amount was about 10 mg, and the temperature was changed at a rate of 10 ° C./min.
  • the results are shown in Table 1.
  • ⁇ Reflow resistance> The adhesive layer of the dicing die bonding film according to the example and the comparative example is pasted on the back surface of the silicon wafer having a thickness of 200 ⁇ m, and dicing to 7.5 mm ⁇ 7.5 mm to stick the chip with the adhesive layer to the adhesive. After peeling from the layer and picking up, XPS (X-ray photoelectron spectroscopic analysis) selects 20 chips with an increase in carbon derived from transfer contaminants of the adhesive of 5 Atomic% or more compared to the blank, and glass.
  • XPS X-ray photoelectron spectroscopic analysis
  • the substrate was mounted on an epoxy substrate under conditions of 180 ° C., 10 N, and 5 seconds. Furthermore, it molded with the sealing material (made by Kyocera Chemical Co., Ltd.), and produced the reflow sample.
  • the sealed sample is treated with a constant temperature and humidity layer of 85 ° C./85% RH for 168 hours and then heated at 220 ° C. for 60 seconds for eutectic solder process or at 260 ° C. for 60 seconds for lead free solder process. Observation was made with an ultrasonic imaging device (SAT) manufactured by Hitachi Construction Machinery Co., Ltd., and the presence or absence of package cracks was examined. Table 1 shows the number of packages in which package cracks were observed for all 20 packages.
  • SAT ultrasonic imaging device
  • Base film 12 Adhesive layer 13: Adhesive layer 14: Adhesive film 15: Semiconductor wafer processing tape 20: Ring frame 21: Stage 22: Adsorption stage 23: Push-up member

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)

Abstract

La présente invention concerne une pellicule autoadhésive et un ruban pour le traitement d'une plaquette de semi-conducteur, capables de réduire l'occurrence de fendillements par fusion dans des boîtiers, même si un boîtier est prélevé dans un état dans lequel un auto-adhésif est fixé à une couche adhésive. Cette pellicule auto-adhésive comprend un film de base et une couche auto-adhésive disposée sur ledit film de base, et est utilisée pour traiter des plaquettes de semi-conducteur. La perte de poids de la couche auto-adhésive à la température de fusion, mesurée par une analyse thermique différentielle, n'est pas supérieure à 1,5 %. De plus, ce ruban pour le traitement d'une plaquette de semi-conducteur présente une pellicule auto-adhésive comprenant une couche de base et une couche auto-adhésive disposée sur ladite couche de base, et une couche adhésive disposée sur la couche auto-adhésive. La perte de poids de la couche auto-adhésive à la température de fusion, mesurée par une analyse thermique différentielle, n'est pas supérieure à 1,5 %.
PCT/JP2010/070073 2010-08-05 2010-11-11 Pellicule adhésive et ruban pour traitement de plaquette de semi-conducteur WO2012017568A1 (fr)

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CN201080005501.9A CN102511077B (zh) 2010-08-05 2010-11-11 粘合薄膜以及半导体晶片加工用胶带
KR1020117017581A KR101143109B1 (ko) 2010-08-05 2010-11-11 점착 필름 및 반도체 웨이퍼 가공용 테이프

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JP2010176798A JP4845065B2 (ja) 2009-08-05 2010-08-05 粘着フィルム及び半導体ウエハ加工用テープ
JP2010-176798 2010-08-05

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WO2017183310A1 (fr) * 2016-04-21 2017-10-26 デンカ株式会社 Ruban adhésif sensible à la pression intégrée à une feuille adhésive et procédé de fabrication d'une puce à semi-conducteur

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CN102511077B (zh) 2015-07-29
TWI425069B (zh) 2014-02-01
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KR20120023595A (ko) 2012-03-13
CN102511077A (zh) 2012-06-20
TW201207072A (en) 2012-02-16

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