WO2012015277A3 - 마이크로 나노 조합구조물, 마이크로 나노 조합구조의 제조방법 및 마이크로 나노 조합구조가 집적된 광소자의 제조방법 - Google Patents
마이크로 나노 조합구조물, 마이크로 나노 조합구조의 제조방법 및 마이크로 나노 조합구조가 집적된 광소자의 제조방법 Download PDFInfo
- Publication number
- WO2012015277A3 WO2012015277A3 PCT/KR2011/005625 KR2011005625W WO2012015277A3 WO 2012015277 A3 WO2012015277 A3 WO 2012015277A3 KR 2011005625 W KR2011005625 W KR 2011005625W WO 2012015277 A3 WO2012015277 A3 WO 2012015277A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- micro
- nano combined
- combined structure
- manufacturing
- optical device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 230000003287 optical effect Effects 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 2
- 239000002923 metal particle Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 abstract 1
- 238000001579 optical reflectometry Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Led Devices (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/813,063 US20130128362A1 (en) | 2010-07-30 | 2011-07-29 | Micro/nano combined structure, manufacturing method of micro/nano combined structure, and manufacturing method of an optical device having a micro/nano combined structure integrated therewith |
CN2011800375914A CN103038671A (zh) | 2010-07-30 | 2011-07-29 | 微纳米组合结构物及其制备方法及光学器件的制备方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0074098 | 2010-07-30 | ||
KR1020100074098A KR101250450B1 (ko) | 2010-07-30 | 2010-07-30 | 마이크로 나노 조합구조의 제조방법 및 마이크로 나노 조합구조가 집적된 광소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012015277A2 WO2012015277A2 (ko) | 2012-02-02 |
WO2012015277A3 true WO2012015277A3 (ko) | 2012-05-18 |
Family
ID=45530634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/005625 WO2012015277A2 (ko) | 2010-07-30 | 2011-07-29 | 마이크로 나노 조합구조물, 마이크로 나노 조합구조의 제조방법 및 마이크로 나노 조합구조가 집적된 광소자의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130128362A1 (ko) |
KR (1) | KR101250450B1 (ko) |
CN (1) | CN103038671A (ko) |
WO (1) | WO2012015277A2 (ko) |
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US20120268822A1 (en) * | 2011-04-19 | 2012-10-25 | Bee Khuan Jaslyn Law | Antireflective hierarchical structures |
JP2013167824A (ja) * | 2012-02-16 | 2013-08-29 | Dexerials Corp | 偏光素子、偏光素子の製造方法 |
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CN103043596B (zh) * | 2012-12-12 | 2015-07-08 | 中国科学院化学研究所 | 具有微米与纳米复合阵列结构的柔性材料及其制备方法和用途 |
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US20150103396A1 (en) * | 2013-05-01 | 2015-04-16 | Byron Zollars | Antireflective Structures for Optics |
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JP6638245B2 (ja) * | 2014-12-12 | 2020-01-29 | 王子ホールディングス株式会社 | 半導体発光素子用基板、および、半導体発光素子 |
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JP6385977B2 (ja) * | 2016-04-22 | 2018-09-05 | デクセリアルズ株式会社 | 光学体、および表示装置 |
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CN107731972A (zh) * | 2017-10-24 | 2018-02-23 | 江门市奥伦德光电有限公司 | 一种长条阵列式纳米发光二极管及其制备方法 |
WO2019130198A1 (en) * | 2017-12-29 | 2019-07-04 | 3M Innovative Properties Company | Anti-reflective surface structures |
CN110196465B (zh) * | 2019-06-14 | 2021-03-16 | 安徽大河镜业有限公司 | 一种镀银镜子及其制备方法 |
GB2585900A (en) * | 2019-07-22 | 2021-01-27 | Ogorodnov Sergey | Photovoltaic cell and method of manufacturing a photovoltaic cell |
CN111016521A (zh) * | 2019-12-27 | 2020-04-17 | 昇印光电(昆山)股份有限公司 | 装饰膜及装饰盖板 |
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CN113740940B (zh) * | 2021-09-06 | 2023-06-09 | 长春理工大学 | 一种宽带宽角度抗反射复合微纳结构表面及其制备方法 |
CN114114474A (zh) * | 2021-09-06 | 2022-03-01 | 长春理工大学 | 一种抗损伤宽角度减反射复合微纳结构及其制备方法 |
CN115020562A (zh) * | 2022-06-01 | 2022-09-06 | 淮安澳洋顺昌光电技术有限公司 | 具有团簇状小岛微结构的衬底的制备方法和外延结构 |
CN116544329B (zh) * | 2023-07-07 | 2023-11-07 | 南昌凯迅光电股份有限公司 | 带微透镜阵列结构ito薄膜的led芯片及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100006748A (ko) * | 2008-07-10 | 2010-01-21 | 한국기계연구원 | 플라즈마 에칭을 이용한 마이크로-나노 패턴의 제작 방법 |
KR20100056183A (ko) * | 2008-11-19 | 2010-05-27 | 한국전자통신연구원 | 복합기능 마이크로렌즈 어레이 기판 및 이의 제조 방법 |
KR20100075000A (ko) * | 2008-12-24 | 2010-07-02 | 광주과학기술원 | 무반사 격자패턴의 제조방법 및 무반사 격자패턴이 집적된 광소자의 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19708776C1 (de) * | 1997-03-04 | 1998-06-18 | Fraunhofer Ges Forschung | Entspiegelungsschicht sowie Verfahren zur Herstellung derselben |
US20070231541A1 (en) * | 2006-03-31 | 2007-10-04 | 3M Innovative Properties Company | Microstructured tool and method of making same using laser ablation |
JP2009128543A (ja) * | 2007-11-21 | 2009-06-11 | Panasonic Corp | 反射防止構造体の製造方法 |
CN101308219B (zh) * | 2008-06-27 | 2010-09-08 | 吉林大学 | 以单层纳米粒子为刻蚀阻挡层构筑抗反射微结构的方法 |
KR101081499B1 (ko) | 2009-08-19 | 2011-11-08 | 광주과학기술원 | 무반사 나노구조의 제조방법 |
-
2010
- 2010-07-30 KR KR1020100074098A patent/KR101250450B1/ko not_active IP Right Cessation
-
2011
- 2011-07-29 CN CN2011800375914A patent/CN103038671A/zh active Pending
- 2011-07-29 WO PCT/KR2011/005625 patent/WO2012015277A2/ko active Application Filing
- 2011-07-29 US US13/813,063 patent/US20130128362A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100006748A (ko) * | 2008-07-10 | 2010-01-21 | 한국기계연구원 | 플라즈마 에칭을 이용한 마이크로-나노 패턴의 제작 방법 |
KR20100056183A (ko) * | 2008-11-19 | 2010-05-27 | 한국전자통신연구원 | 복합기능 마이크로렌즈 어레이 기판 및 이의 제조 방법 |
KR20100075000A (ko) * | 2008-12-24 | 2010-07-02 | 광주과학기술원 | 무반사 격자패턴의 제조방법 및 무반사 격자패턴이 집적된 광소자의 제조방법 |
Non-Patent Citations (1)
Title |
---|
SAHOO K. C. ET AL., NANOSCALE RES LETTER, 22 April 2009 (2009-04-22), pages 680 - 683 * |
Also Published As
Publication number | Publication date |
---|---|
WO2012015277A2 (ko) | 2012-02-02 |
KR101250450B1 (ko) | 2013-04-08 |
CN103038671A (zh) | 2013-04-10 |
KR20120021427A (ko) | 2012-03-09 |
US20130128362A1 (en) | 2013-05-23 |
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