WO2012011528A1 - Dispositif émetteur de lumière et dispositif d'éclairage - Google Patents

Dispositif émetteur de lumière et dispositif d'éclairage Download PDF

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Publication number
WO2012011528A1
WO2012011528A1 PCT/JP2011/066565 JP2011066565W WO2012011528A1 WO 2012011528 A1 WO2012011528 A1 WO 2012011528A1 JP 2011066565 W JP2011066565 W JP 2011066565W WO 2012011528 A1 WO2012011528 A1 WO 2012011528A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light emitting
emitting device
wavelength conversion
conversion member
Prior art date
Application number
PCT/JP2011/066565
Other languages
English (en)
Japanese (ja)
Inventor
作本 大輔
三宅 徹
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Publication of WO2012011528A1 publication Critical patent/WO2012011528A1/fr

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00Refractors for light sources
    • F21V5/10Refractors for light sources comprising photoluminescent material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/005Reflectors for light sources with an elongated shape to cooperate with linear light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]

Definitions

  • the upper surface of the base 3 is made of a metal material such as aluminum, silver, gold, copper, or platinum with a space between the wiring conductor and the plating layer in order to efficiently reflect light above the base 3.
  • a metal reflective layer may be formed.
  • an insulating transparent member such as a silicone resin containing white ceramic powder is applied to a portion of the upper surface of the substrate 3 excluding a portion where the light emitting element 5 is mounted to form a reflective layer. May be. As a result, light emitted downward from the light emitting element 5 is diffusely reflected upward on the upper or lower surface of the reflective layer, so that the light emission efficiency can be increased.
  • the inner wall surfaces of the frame body 9 facing each other are inclined so that the interval between the inner wall surfaces facing each other increases from the lower side to the upper side.
  • a metal layer made of tungsten, molybdenum, copper or silver, and a plating layer made of nickel or gold covering the metal layer may be formed on the inclined inner wall surface of the frame body 9. This plating layer has a function of efficiently reflecting the light emitted from the light emitting element 5.
  • the inclination angle of the inner wall surface of the frame body 9 is set to an angle of, for example, 55 degrees or more and 70 degrees or less with respect to the upper surface of the base 3.
  • the surface roughness of the plating layer is set such that the arithmetic average roughness Ra is, for example, 1 ⁇ m or more and 3 ⁇ m or less.
  • a step 9 a is provided inside the upper end of the frame body 9.
  • the step 9 a of the frame body 9 is for supporting the wavelength conversion member 7.
  • the step 9a is a part of the upper portion of the frame body 9 cut out inward, and can support the end of the wavelength conversion member 7.
  • a plating layer may be formed up to the surface of the step 9a.
  • the width in the height direction is set to 0.5 mm or more and 3 mm or less
  • the width in the thickness direction of the frame body 9 (lateral direction in FIG. 2) is set to 0.3 mm or more and 3 mm or less. Can do.
  • the wavelength conversion member 7 in this embodiment is disposed above the light emitting element 5. Specifically, the wavelength conversion member 7 is positioned above the light emitting element 5 so as to face the light emitting element 5 with a gap.
  • the wavelength conversion member 7 has a flange-shaped portion on the outer peripheral portion thereof and outside the peripheral portion 7e.
  • the wavelength conversion member 7 is positioned on the frame body 9, and the collar-shaped part is supported by the frame body 9.
  • the wavelength conversion member 7 has an inner surface facing the light emitting element 5 and an outer surface located on the side opposite to the inner surface.
  • the inner surface of the wavelength conversion member 7 has a concave curved shape.
  • the inner surface has a concave dome shape as compared with the case where the inner surface has a flat shape, the light emitted from the light emitting element 5 and incident on the wavelength converting member 7 is reflected on the inner surface of the wavelength converting member 7. Since it is difficult to reflect, more light can enter the wavelength conversion member 7.
  • the wavelength conversion member 7 is made of a silicone resin, an acrylic resin, or an epoxy resin, and a configuration in which a phosphor is contained in the resin can be given as an example.
  • a phosphor a blue phosphor emitting fluorescence of 430 nm to 490 nm, a green phosphor emitting fluorescence of 500 nm to 560 nm, a yellow phosphor emitting fluorescence of 540 nm to 600 nm, or a fluorescence of 590 nm to 700 nm
  • a red phosphor that emits is one containing a red phosphor that emits.
  • the phosphor is uniformly dispersed in the wavelength conversion member 7.
  • the thermal conductivity of the wavelength conversion member 7 is set to, for example, 0.10 W / (m ⁇ K) or more and 0.30 W / (m ⁇ K) or less.
  • the diameter can be set to 1 mm or more and 18 mm or less when the shape is circular when viewed in plan.
  • the thickness of the wavelength conversion member 7 is set such that the smallest thickness portion is 0.7 mm or more and the thickest portion is 3 mm or less.
  • the light emitting device 1 of the present embodiment has a plurality of light emitting elements 5.
  • each light emitting element 5 overlaps the wavelength conversion member 7 in the central region 7a.
  • the light emitted from each light emitting element 5 in the directly upward direction is easily reflected in the flat central region 7a, and the light emitted obliquely above the region where the plurality of light emitting elements 5 are disposed is a convex curved surface. It is because it becomes difficult to reflect in the peripheral area
  • the flat surface portion, that is, the thickness T1 in the central portion 7d has a convex curved surface portion, that is, a peripheral edge. It is preferable that the thickness is larger than the thickness T2 in the portion 7e.
  • the thickness T1 at the smallest thickness in the central portion 7d is the thickness in the peripheral portion 7e.
  • the thickness is preferably larger than the thickness T2 at the smallest portion.
  • the ratio T1 / T2 between the thickness T1 in the central portion 7d and the thickness T2 in the peripheral portion 7e is more preferably about 1.2 to 5.
  • the wavelength conversion member 7 As described above, the light emitted from the light emitting element 5 enters the inside of the wavelength conversion member 7, the phosphor contained in the wavelength conversion member 7 is excited, and the light whose wavelength is converted from the phosphor Radiated. At this time, since the wavelength conversion member 7 generates heat due to the loss of wavelength conversion, the wavelength conversion member 7 is thermally expanded. In the wavelength conversion member 7 of the present embodiment, thermal stress caused by this thermal expansion tends to concentrate on the boundary portion between the central region 7a and the peripheral region 7b having different outer surface shapes. However, when the thickness T1 of the central portion in the central portion 7d is smaller than the thickness T3 of the peripheral end portion in the central portion 7d as in the wavelength conversion member 7 in the present embodiment, the strength of the boundary portion is increased. Therefore, the boundary portion can be prevented from being greatly deformed or broken.
  • the light loss at the boundary portion is likely to increase.
  • the thickness T1 of the central portion in the central portion 7d is smaller than the thickness T3 of the peripheral end portion in the central portion 7d, the amount of the phosphor existing in the vicinity of the boundary portion can be increased. As a result, light emission from the center portion 7d is increased, and unevenness in light emission between the central portion of the central portion 7d and the peripheral end portion of the central portion 7d can be reduced.
  • the end of the wavelength conversion member 7 is positioned on the step 9 a of the frame 9, and the end of the wavelength conversion member 7 is surrounded by the frame 9.
  • the light that has entered the wavelength conversion member 7 from the light emitting element 5 may reach the end within the wavelength conversion member 7.
  • the reflected light can be returned into the wavelength conversion member 7 again by reflecting the light traveling from the end of the wavelength conversion member 7 toward the frame body 9 with the frame body 9.
  • the phosphor is excited by the light that has returned to the wavelength conversion member 7 again, so that the light output of the light emitting device 1 can be improved.
  • the end of the wavelength conversion member 7 is bonded and fixed to the step 9 a of the frame body 9 via a translucent bonding member 11.
  • the bonding member 11 is bonded to the side surface, the upper surface, and the lower surface of the wavelength conversion member 7. In such a case, the possibility that the wavelength conversion member 7 peels from the bonding member 11 can be suppressed.
  • the thermal conductivity of the bonding member 11 is set to be larger than the thermal conductivity of the wavelength conversion member 7.
  • the bonding member 11 is formed from the end position on the upper surface of the wavelength conversion member 7 to the end position on the lower surface of the wavelength conversion member 7.
  • the joining member 11 is made of a translucent insulating resin such as a silicone resin, an acrylic resin, or an epoxy resin.
  • a silicone resin as the bonding member 11. This is because light of a short wavelength can be transmitted satisfactorily and the deterioration of transmittance due to light energy is small.
  • the wavelength of the light-emitting element 5 is 450 nm or less, a decrease in transmittance due to light energy is large, and therefore it is desirable to use a silicone resin as the wavelength conversion member 7.
  • the light emitting device 1 of the present embodiment further includes a light-transmitting sealing member 13 disposed on the light emitting element 5 between the light emitting element 5 and the wavelength conversion member 7.
  • the translucent sealing member 13 is disposed on the light emitting element 5, and the wavelength conversion member 7 is disposed above the translucent sealing member 13.
  • the sealing member 13 has a function of sealing the light emitting element 5 and transmitting light emitted from the light emitting element 5.
  • the sealing member 13 is a region surrounded by the frame body 9 in a state where the light emitting element 5 is accommodated inside the frame body 9, and is filled up to a position lower than the height position of the step 9a. Therefore, there is a gap between the wavelength conversion member 7 and the sealing member 13 in the present embodiment.
  • At least a portion of the upper surface of the sealing member 13 positioned immediately above the light emitting element 5 is a plane parallel to the upper surface of the light emitting element 5.
  • the light emitted from the upper surface of the light emitting element 5 and traveling inside the sealing member 13 and reaching the upper surface of the sealing member 13 is incident at an acute angle with respect to the upper surface of the sealing member 13. Reflecting on the upper surface of 13 is suppressed, and it becomes easy to radiate above the sealing member 13.
  • the entire upper surface of the sealing member 13 is a plane parallel to the upper surface of the light emitting element 5.
  • the light is refracted to the side of the light emitting element 5 when proceeding from the sealing member 13 to the gap.
  • the fact that the upper surface of the sealing member 13 is a plane parallel to the upper surface of the light emitting element 5 does not mean that it is strictly a planar shape.
  • the top surface of the sealing member 13 inevitably occurs in the manufacturing process, and the side end surface of the sealing member 13 is joined to the inner peripheral surface of the frame body 9, sealing is performed.
  • Some concave shape or convex shape is unavoidably generated at the side end portion of the sealing member 13 due to the wettability between the stop member 13 and the frame body 9.
  • the bonding member 11 is exposed to the gap between the wavelength conversion member 7 and the sealing member 13. This is because it is possible to increase the possibility that the light incident on the bonding member 11 is reflected upward on the surface of the bonding member 11 exposed in the gap having a refractive index smaller than that of the bonding member 11. Therefore, it is possible to reduce light loss caused by entering the sealing member 13 from the joining member 11 and repeating irregular reflection inside the light emitting device 1. Furthermore, the light traveling on the surface exposed to the gap of the bonding member 11 is easily reflected upward, and the light emitted to the outside of the light emitting device 1 through the upper surface of the bonding portion can be increased. As a result, the light emission efficiency of the light emitting device 1 can be increased.
  • the sealing member 13 has a function of absorbing heat caused by photoelectric conversion of the light emitting element 5 and diffusing in the sealing member 13. Further, heat caused by light emitted from the light emitting element 5 is transmitted to the base 3 and the frame body 9 through the sealing member 13, so that the heat is easily diffused throughout the light emitting device 1. If heat concentrates at a specific location in the sealing member 13, the thermal expansion of the sealing member 13 becomes extremely large locally, and the sealing member 13 may be peeled off from the base 3. Further, when heat concentration occurs in the sealing member 13, the light emitting element 5 becomes high temperature, the wavelength of light emitted from the light emitting element 5 changes, and the emission color of the light emitting element 5 may greatly deviate from the desired light color. Occurs.
  • the light emitting device 1 of the second embodiment includes a wavelength conversion member 7 disposed on the light emitting element 5 similarly to the light emitting device 1 of the first embodiment.
  • the light emitting device 1 of the first embodiment corners are formed at the boundary between the flat surface (center region 7a) and the convex curved surface (peripheral region 7b) of the wavelength conversion member 7, but in this embodiment.
  • the peripheral region 7b of the wavelength conversion member 7 is smoothly connected to the central region 7a. In other words, no corner is formed at the boundary between the central region 7a and the peripheral region 7b of the wavelength conversion member 7.
  • the central region 7a and the peripheral region 7b are smoothly connected to each other in that the boundary portion between the central region 7a and the peripheral region 7b is strictly smoothly connected.
  • a corner having a size of irregularities inevitably generated in the manufacturing process is formed on the outer surface of the wavelength conversion member 7 at the boundary between the central region 7a and the peripheral region 7b.
  • the effect of the present embodiment can be sufficiently obtained as long as the boundary portion between the central region 7a and the peripheral region 7b cannot be visually recognized.
  • the wavelength conversion member 7 has a central portion 7d including a region overlapping with the light emitting element 5 and a peripheral portion 7e positioned so as to surround the central portion 7d when seen in a plan view.
  • the outer surface of the wavelength conversion member 7 has a central region 7a including a region overlapping the light emitting element 5 and a peripheral region 7b positioned so as to surround the central region 7a when seen through on a plane.
  • the central region 7a is a flat surface and the peripheral region 7b is a convex curved surface, but the wavelength in the light emitting device 1 of the present embodiment.
  • region 7b are convex curved surfaces, respectively.
  • the curvature of the central region 7 a is smaller than the curvature of the peripheral region 7 b and the curvature of the inner surface, and the outer surface is similar to the light emitting device 1 of the first embodiment.
  • the central portion 7d which is the central region 7a, functions as a concave lens
  • the central portion 7d functions as a concave lens, the light emitted from the central region 7a can be efficiently dispersed obliquely above the light emitting device 1. it can. Therefore, it is possible to reduce the variation in the amount of light irradiated to the portion located directly above the light emitting device 1 on the irradiation surface and the amount of light irradiated to the portion positioned obliquely above the light emitting device 1 on the irradiation surface.
  • the curvature of the central region 7a is smaller than the curvature of the peripheral region 7b and the curvature of the inner surface. This is because the curvature radius of the central region 7a is the curvature radius of the peripheral region 7b and the curvature of the inner surface. In other words, it is larger than the radius.
  • the ratio of the radius of curvature of the central region 7a to the radius of curvature of the peripheral region 7b and the ratio of the radius of curvature of the central region 7a to the radius of curvature of the inner surface are about 1.1 to 2.0, respectively. preferable.
  • the light emitting device 1 of the fourth embodiment includes a wavelength conversion member 7 disposed on the light emitting element 5, similarly to the light emitting device 1 of the first embodiment. Further, the inner surface (the lower surface in FIG. 5) facing the light emitting element 5 in the wavelength conversion member 7 is a concave curved surface.
  • the central portion 7d functions as a concave lens, the light emitted from the central region 7a can be efficiently dispersed obliquely above the light emitting device 1. it can. Therefore, it is possible to reduce the variation in the amount of light irradiated to the portion located directly above the light emitting device 1 on the irradiation surface and the amount of light irradiated to the portion positioned obliquely above the light emitting device 1 on the irradiation surface.
  • the light emitting device 1 according to the fifth embodiment includes a wavelength conversion member 7 disposed on the light emitting element 5, similarly to the light emitting device 1 according to the first embodiment.
  • the wavelength conversion member 7 in this embodiment has the several recessed part 7c in the outer surface.
  • a region including a region overlapping the light emitting element and excluding a portion where the recess 7c is formed is a central region.
  • a region that is located so as to surround the central region and has a convex curved surface except for a portion where the concave portion 7c is formed is defined as a peripheral region.
  • the wavelength conversion member 7 has a concave inner surface and a plurality of concave portions 7c on the outer surface.
  • the surface area of the surface of the conversion member 7 can be increased. For this reason, light that has been wavelength-converted inside the wavelength conversion member 7 can easily be emitted to the outside while making a large amount of light enter the wavelength conversion member 7, so that the light emission efficiency of the light-emitting device 1 can be improved.
  • the width of the recess 7c can be set to 0.4 mm to 4 mm, for example.
  • the width of the recess 7c means the length of one side when the shape of the opening of the recess 7c is rectangular, and the shape of the opening of the recess 7c is oval. Means the major axis.
  • the depth of the recess 7c can be set to 0.3 mm to 1.5 mm, for example.
  • a plating layer is formed on the surface of the wiring conductor exposed on the upper and lower surfaces of the substrate 3 to prevent the wiring conductor from being oxidized. Then, the light emitting element 5 is electrically connected to the plating layer via solder.
  • the frame body 9 is sintered at a desired temperature to be a porous sintered body, and is bonded to the upper surface of the substrate 3 so as to surround the light emitting element 5 with an adhesive made of silicone resin.
  • the wavelength conversion member 7 is prepared.
  • the wavelength conversion member 7 can be obtained by mixing a phosphor with uncured resin, filling the uncured wavelength conversion member 7 into a mold, curing, and taking it out, for example.
  • the wavelength conversion member 7 having the outer surface of the desired shape can be obtained. That is, a form having a shape that is formed according to the shape of the wavelength conversion member 7 in the light emitting device 1 of each embodiment may be prepared in advance.
  • a molding method of the wavelength conversion member 7 a general molding method represented by injection molding, extrusion molding, hollow molding, compression molding, and thermoforming may be appropriately used.
  • the formation of the central region 7a and the peripheral region 7b of the wavelength conversion member 7 is not limited to the above method, and the wavelength conversion member 7 may be formed by scraping off a part of the outer surface of the wavelength conversion member 7 that has been hardened and taken out.
  • the wavelength conversion member 7 produced by the above method is bonded onto the step 9 a of the frame body 9 via the bonding member 11.
  • the joining member 11 is disposed on the step 9 a of the frame body 9, and the prepared wavelength conversion member 7 is disposed on the joining member 11.
  • the wavelength conversion member 7 can be bonded onto the frame body 9 via the bonding member 11 by curing the bonding member 11.
  • an excessive bonding member 11 is disposed on the step 9 a of the frame body 9 and is disposed while pressing the wavelength conversion member 7 against the bonding member 11, whereby a part of the bonding member 11 is disposed on the wavelength conversion member 7. Can be extruded onto the top surface.
  • the bonding member 11 can be bonded to the side surface, the upper surface, and the lower surface of the wavelength conversion member 7.
  • the step 9 a between the wavelength conversion member 7 and the frame body 9 so that a part of the bonding member 11 is bonded to the upper surface of the wavelength conversion member 7.
  • the bonding member 11 can be bonded to the side surface, the upper surface, and the lower surface of the wavelength conversion member 7 by filling the gap between the bonding member 11 with a dispenser or the like. As described above, the light-emitting device 1 of the above-described embodiment can be manufactured.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif émetteur de lumière comportant : un substrat ; un élément émetteur de lumière placé sur la surface principale du substrat ; et un composant de conversion de longueur d'onde qui est placé sur l'élément émetteur de lumière et qui présente une surface intérieure faisant face à l'élément émetteur de lumière et une surface extérieure du côté opposé à la surface intérieure. La surface intérieure est une surface incurvée de forme concave. La surface extérieure comprend une surface plate et des surfaces convexes incurvées positionnées de façon à envelopper la surface plate. Ladite surface plate est positionnée de façon à se recouper avec l'élément émetteur de lumière lorsqu'ils sont observés dans une vue en plan.
PCT/JP2011/066565 2010-07-22 2011-07-21 Dispositif émetteur de lumière et dispositif d'éclairage WO2012011528A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-165118 2010-07-22
JP2010165118 2010-07-22

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Publication Number Publication Date
WO2012011528A1 true WO2012011528A1 (fr) 2012-01-26

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2672310A1 (fr) * 2012-06-05 2013-12-11 Foshan Nationstar Optoelectronics Co., Ltd Objectif grand angle et module de source lumineuse DEL à émission grand angle
EP2685496A3 (fr) * 2012-07-09 2016-01-27 LG Innotek Co., Ltd. Appareil électroluminescent
JP2016119477A (ja) * 2014-12-23 2016-06-30 エルジー イノテック カンパニー リミテッド 発光素子及び照明システム
KR20160076606A (ko) * 2014-12-23 2016-07-01 엘지이노텍 주식회사 발광 소자
EP3690509A1 (fr) * 2013-08-26 2020-08-05 Seoul Semiconductor Co., Ltd. Lentille et module d'émission de lumière pour l'éclairage de surface
US10948156B2 (en) 2016-11-22 2021-03-16 Signify Holding B.V. Cover for LED luminaires

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049019A (ja) * 2005-08-11 2007-02-22 Koha Co Ltd 発光装置
JP2008053702A (ja) * 2006-07-26 2008-03-06 Kyocera Corp 発光装置および照明装置
JP2009044016A (ja) * 2007-08-09 2009-02-26 Sharp Corp 発光装置およびこれを備える照明装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049019A (ja) * 2005-08-11 2007-02-22 Koha Co Ltd 発光装置
JP2008053702A (ja) * 2006-07-26 2008-03-06 Kyocera Corp 発光装置および照明装置
JP2009044016A (ja) * 2007-08-09 2009-02-26 Sharp Corp 発光装置およびこれを備える照明装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2672310A1 (fr) * 2012-06-05 2013-12-11 Foshan Nationstar Optoelectronics Co., Ltd Objectif grand angle et module de source lumineuse DEL à émission grand angle
EP2685496A3 (fr) * 2012-07-09 2016-01-27 LG Innotek Co., Ltd. Appareil électroluminescent
US9347650B2 (en) 2012-07-09 2016-05-24 Lg Innotek Co., Ltd. Light emitting apparatus using medium layer between wavelength conversion layer and transparent layer
EP3690509A1 (fr) * 2013-08-26 2020-08-05 Seoul Semiconductor Co., Ltd. Lentille et module d'émission de lumière pour l'éclairage de surface
US10809507B2 (en) 2013-08-26 2020-10-20 Seoul Semiconductor Co., Ltd. Lens and light emitting module for surface illumination
JP2016119477A (ja) * 2014-12-23 2016-06-30 エルジー イノテック カンパニー リミテッド 発光素子及び照明システム
KR20160076606A (ko) * 2014-12-23 2016-07-01 엘지이노텍 주식회사 발광 소자
KR102282945B1 (ko) * 2014-12-23 2021-07-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
US10948156B2 (en) 2016-11-22 2021-03-16 Signify Holding B.V. Cover for LED luminaires

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