WO2011158638A1 - 電子機器、表示装置およびテレビジョン受像機 - Google Patents
電子機器、表示装置およびテレビジョン受像機 Download PDFInfo
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- WO2011158638A1 WO2011158638A1 PCT/JP2011/062334 JP2011062334W WO2011158638A1 WO 2011158638 A1 WO2011158638 A1 WO 2011158638A1 JP 2011062334 W JP2011062334 W JP 2011062334W WO 2011158638 A1 WO2011158638 A1 WO 2011158638A1
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- substrate
- contact
- semiconductor element
- metal plate
- chassis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133314—Back frames
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133604—Direct backlight with lamps
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to an electronic device, a display device, and a television receiver, and more particularly, to an electronic device, a display device, and a television receiver including a substrate on which a semiconductor element is attached.
- FIG. 36 is a cross-sectional view showing a structure of an electronic apparatus according to a conventional example including a substrate to which a semiconductor element is attached.
- an electronic device 2001 includes a plurality of semiconductor elements 2002, a substrate 2003 to which a plurality of semiconductor elements 2002 are attached, a heat dissipation sheet 2004 disposed on the semiconductor elements 2002, and heat dissipation.
- a metal plate 2005 that is in contact with the semiconductor element 2002 through the sheet 2004 and a chassis 2006 that is disposed at a predetermined distance from the substrate 2003 are provided.
- the plurality of semiconductor elements 2002 includes semiconductor elements 2002a and 2002b having different thicknesses.
- the semiconductor element 2002b has a larger thickness than the semiconductor element 2002a.
- the plurality of heat radiation sheets 2004 include a heat radiation sheet 2004a disposed on the semiconductor element 2002a and a heat radiation sheet 2004b disposed on the semiconductor element 2002b.
- the metal plate 2005 is formed with a plurality of protrusions 2005a and 2005b that protrude toward the substrate 2003 side.
- the plurality of protrusions 2005a and 2005b are formed to have different protrusion heights.
- the protrusion 2005b has a protrusion height smaller than that of the protrusion 2005a.
- the protruding portion 2005a is formed at a position facing the semiconductor element 2002a, and the protruding portion 2005b is formed at a position facing the semiconductor element 2002b.
- the semiconductor element 2002a is in contact with the protruding portion 2005a through the heat dissipation sheet 2004a, and the semiconductor element 2002b is in contact with the protruding portion 2005b through the heat dissipation sheet 2004b. Thereby, the heat generated in the semiconductor element 2002 can be radiated to the metal plate 2005.
- a substrate 2003 and a metal plate 2005 are fixed to the chassis 2006 using a fixing member (not shown).
- the protrusions 2005a and 2005b may not contact the semiconductor element 2002 (heat dissipation sheet 2004) due to manufacturing variation or the like.
- the protrusion 2005a when the protrusion height of the protrusion 2005a becomes smaller than the design value due to manufacturing variations, the protrusion 2005a may not contact the semiconductor element 2002a (heat dissipation sheet 2004a). For this reason, there is a problem that it is difficult to dissipate heat generated in the semiconductor element 2002a to the metal plate 2005.
- the present invention has been made to solve the above-described problems, and an object of the present invention is to provide an electronic device, a display device, and a television receiver that can suppress a decrease in heat dissipation. Is to provide.
- an electronic apparatus is provided with a semiconductor element, a substrate to which the semiconductor element is attached, and a first projecting portion that is disposed opposite to the substrate and projects toward the semiconductor element side.
- a first projecting portion including a contact portion in contact with the semiconductor element, and a contact member for bringing the semiconductor element into contact with the contact portion at least at a position corresponding to the central portion of the substrate Is provided.
- the metal plate is provided with the first protrusion including the contact portion that is in contact with the semiconductor element, so that the heat generated in the semiconductor element is dissipated to the metal plate. be able to.
- the metal plate with the first protrusion including the contact portion that contacts the semiconductor element, for example, even when a plurality of semiconductor elements having different thicknesses are attached to the substrate, By setting the protrusion height of each of the first protrusions in accordance with the thickness of the semiconductor element to be contacted, all the semiconductor elements can be easily brought into contact with the metal plate (first protrusion).
- the contact member for bringing the semiconductor element into contact with the contact portion is provided at least at a position corresponding to the central portion of the substrate.
- the contact member has a function of pressing the central portion of the substrate toward the metal plate. If comprised in this way, a semiconductor element can be made to contact a contact part easily with the member for contact.
- the contact member is preferably arranged on the surface side opposite to the metal plate of the substrate, and the central portion of the substrate is A pressing member that presses the metal plate is included. If comprised in this way, the center part of a board
- substrate can be easily pressed to the metal plate side with the member for contact.
- the pressing member preferably includes a second protruding portion that protrudes toward the substrate and presses the central portion of the substrate. If comprised in this way, the center part of a board
- substrate can be more easily pressed to the metal plate side with a pressing member.
- the contact member has a function of pressing the central portion of the substrate toward the metal plate
- the contact member includes at least one of a screw and a band attached to the substrate and the metal plate. If comprised in this way, a semiconductor element can be made to contact a contact part easily with the member for contact.
- the contact member includes a spring portion that is provided at least in the first projecting portion and biases the contact portion toward the semiconductor element. If comprised in this way, since a contact part can be urged
- the first protrusion is preferably formed by bending a metal plate. If comprised in this way, while the 1st protrusion part which protrudes in the semiconductor element side can be easily formed in a metal plate, the spring part which urges
- a cutout portion is formed around the first protrusion of the metal plate, and the metal plate straddles the cutout portion, and the first A first heat conducting member is provided in contact with the protruding portion and a portion other than the first protruding portion of the metal plate.
- the 1st heat conductive member contacted with parts other than the 1st projection part and the 1st projection part of a metal plate the direction which the cutout part is not formed in the heat which generate
- the contact member preferably includes a first adhesive layer that bonds the substrate and the metal plate. If comprised in this way, it can suppress that a board
- a third protrusion that protrudes toward the substrate is provided at a position of the metal plate corresponding to the edge of the substrate. It is attached to the 3rd protrusion part of a board. If comprised in this way, since a clearance gap can be formed between the center part of a board
- the third protrusion for adjusting the distance from the metal plate to the substrate is between the third protrusion and the substrate.
- One elastic body is provided. If comprised in this way, since the distance from the contact part of a 1st protrusion part to a board
- the first protrusion is preferably attached to the metal plate via a second elastic body for adjusting the distance from the first protrusion to the metal plate. If comprised in this way, since the distance from a 1st protrusion part to a metal plate can be adjusted, the distance from a 1st protrusion part to a board
- the metal plate is preferably provided with a heat radiating fin. If comprised in this way, the heat dissipation of an electronic device can be improved more.
- the heat radiating fins are preferably formed by cutting out the metal plate. If comprised in this way, a radiation fin can be easily formed in a metal plate.
- the substrate includes a plurality of element mounting parts to which the plurality of semiconductor elements are attached, and the contact member is provided in the element mounting part. It is provided at at least one of a corresponding position and a position corresponding to a portion between a plurality of element mounting portions. If comprised in this way, a semiconductor element can be made to contact a 1st protrusion part more reliably by the member for a contact.
- a second heat conducting member is disposed between the semiconductor element and the first projecting portion, and the first projecting portion is interposed via the second heat conducting member. In contact with the semiconductor element. If comprised in this way, since it can make it easy to transmit the heat which generate
- a through hole is formed in the contact portion. If comprised in this way, when attaching a board
- a second adhesive layer is provided between the second heat conducting member and the first projecting portion. Has been placed. If comprised in this way, since a contact with the 2nd heat conductive member and the 1st projection part can be maintained satisfactorily, it will make it easy to transmit the heat which generates with a semiconductor element to the 1st projection part (heat dissipation) more. be able to. Thereby, the heat dissipation of an electronic device can be improved more.
- a display device includes the electronic device having the above-described configuration. If comprised in this way, the display apparatus which can suppress that heat dissipation falls will be obtained.
- a television receiver includes the display device having the above-described configuration and a support member that supports the display device. If comprised in this way, the television receiver which can suppress that heat dissipation falls will be obtained.
- the support member includes a contact member that presses the central portion of the substrate toward the metal plate. If comprised in this way, since a support member can be shared as a member for contact, it can suppress that a number of parts increases.
- the support member is preferably provided with a heat radiating fin. If comprised in this way, the heat dissipation of a television receiver can be improved more.
- FIG. 1 is a cross-sectional view illustrating a structure of a liquid crystal display device according to a first embodiment of the present invention. It is sectional drawing which showed the structure of the board
- FIG. 6 is a cross-sectional view showing a structure around a substrate of a liquid crystal display device according to a second embodiment of the present invention. It is an expanded sectional view for demonstrating the structure of the board
- FIG. 10 is an enlarged cross-sectional view for explaining the structure around the substrate shown in FIG. 9. It is sectional drawing which showed the structure of the board
- FIG. It is a top view for demonstrating the structure of the chassis shown in FIG. It is sectional drawing for demonstrating the structure of the chassis shown in FIG. It is a top view for demonstrating the structure of the chassis shown in FIG. It is sectional drawing which showed the structure of the chassis periphery of the liquid crystal display device by 6th Embodiment of this invention. It is a bottom view for demonstrating the structure of the chassis periphery shown in FIG. It is sectional drawing which showed the structure around the board
- FIG. 23 is a cross-sectional view for explaining a structure around a chassis shown in FIG. 22. It is sectional drawing which showed the structure of the chassis of the liquid crystal display device by the 1st modification of this invention. It is a top view for demonstrating the structure of the chassis of the liquid crystal display device by the 2nd modification of this invention. It is the bottom view which showed the structure of the chassis periphery of the liquid crystal display device by the 3rd modification of this invention. It is the bottom view which showed the structure around the chassis of the liquid crystal display device by the 4th modification of this invention.
- FIG. 31 is a cross-sectional view showing the structure around the substrate of FIG. 30 from above. It is the rear view which showed the structure of the television receiver by the 7th modification of this invention.
- FIG. 33 is a plan view showing a structure around a substrate in FIG. 32. It is the rear view which showed the structure of the television receiver by the 8th modification of this invention.
- FIG. 35 is a cross-sectional view showing the structure around the substrate in FIG. 34 from above. It is sectional drawing which showed the structure of the electronic device by a conventional example.
- FIG. 37 is a cross-sectional view for explaining the structure of the electronic apparatus according to the conventional example shown in FIG. 36.
- the liquid crystal display device 1 constitutes, for example, a liquid crystal television receiver (not shown).
- the liquid crystal display device 1 includes a liquid crystal display panel 2, an optical sheet 3 and a plurality of light sources 4 arranged on the back surface (back surface) side of the liquid crystal display panel 2, and an optical sheet 3 and a plurality of light sources.
- a sheet metal chassis 5 that houses the light source 4, a plurality of semiconductor elements 6 disposed outside the chassis 5, a substrate 7 to which the plurality of semiconductor elements 6 are attached and disposed opposite to the chassis 5, and the semiconductor elements 6
- the heat conducting member 8 is disposed on the upper side, and the sheet metal pressing member 9 is disposed on the back surface (back surface) side of the substrate 7.
- the optical sheet 3, the plurality of light sources 4, the chassis 5, and the like constitute a direct type backlight device.
- the liquid crystal display device 1 is an example of the “electronic device” and “display device” of the present invention
- the chassis 5 is an example of the “metal plate” of the present invention.
- the heat conducting member 8 (8a, 8b) is an example of the “second heat conducting member” in the present invention
- the pressing member 9 is an example of the “contact member” in the present invention.
- the liquid crystal display panel 2 includes two glass substrates that sandwich a liquid crystal layer (not shown).
- the liquid crystal display panel 2 functions as a display panel when illuminated by the light source 4.
- the optical sheet 3 is composed of a plurality of sheets such as a prism sheet and a lens sheet, for example.
- the light source 4 is formed by, for example, a fluorescent lamp.
- the light source 4 may be formed of, for example, an LED (Light Emitting Diode) other than the fluorescent lamp.
- a reflection sheet (not shown) may be disposed on the back side of the light source 4.
- the chassis 5 is formed with a plurality of ribs 10 protruding toward the substrate 7 (outside).
- the plurality of ribs 10 are formed by, for example, drawing.
- the plurality of ribs 10 correspond to ribs 11 and 12 that are brought into contact with the semiconductor element 6 via the heat conducting member 8 and positions (edges) corresponding to edge portions 7d (see FIG. 3) described later of the substrate 7 of the chassis 5. And a plurality of ribs 13 disposed at a position directly above the portion 7d.
- the ribs 11 and 12 are an example of the “first protrusion” in the present invention, and the rib 13 is an example of the “third protrusion” in the present invention.
- the ribs 11 and 12 are formed so as to have different protrusion heights (heights in the thickness direction).
- the ribs 12 have a protrusion height smaller than that of the ribs 11.
- the rib 11 is formed at a position facing a semiconductor element 6a described later
- the rib 12 is formed at a position facing a semiconductor element 6b described later.
- the ribs 11 and 12 are respectively formed with contact portions 11a and 12a that are in contact with the semiconductor element 6 (heat conducting member 8).
- the contact portions 11a and 12a are formed flat, for example.
- the plurality of ribs 13 are formed so as to have the same protruding height. Further, the plurality of ribs 13 have a protruding height larger than that of the ribs 11 and 12.
- the protruding height of the plurality of ribs 13 includes the protruding height of the rib 11 (or rib 12), the thickness of the heat conduction member 8a (or heat conduction member 8b) described later, and the semiconductor element 6a (or semiconductor element) described later. 6b) is set to the same size as the combined thickness.
- the plurality of semiconductor elements 6 are elements for performing processing such as FRC (Frame Rate Control), for example, and generate a large amount of heat during operation.
- the plurality of semiconductor elements 6 include semiconductor elements 6a and 6b having different thicknesses.
- the semiconductor element 6b has a larger thickness than the semiconductor element 6a.
- the heat conductive member 8 is formed of, for example, a heat radiating sheet (heat conductive sheet) having high thermal conductivity. Further, the heat conducting member 8 is formed to be elastically deformable so as to be compressed by being pressed.
- the plurality of heat conducting members 8 include a heat conducting member 8a disposed on the semiconductor element 6a and a heat conducting member 8b disposed on the semiconductor element 6b.
- the semiconductor element 6a is in contact with the contact portion 11a of the rib 11 through the heat conducting member 8a, and the semiconductor element 6b is in contact with the contact portion 12a of the rib 12 through the heat conducting member 8b.
- the substrate 7 includes a central portion 7c including element mounting portions 7a and 7b to which a plurality of semiconductor elements 6a and 6b are respectively attached, and an edge portion 7d (a portion other than the central portion 7c).
- the pressing member 9 is disposed on the back surface (surface opposite to the chassis 5) side of the substrate 7. Further, as shown in FIGS. 2 and 4, the pressing member 9 is formed to extend along a direction (A direction) in which the semiconductor element 6 is arranged, for example. Further, as shown in FIG. 5, the pressing member 9 is formed to have a step shape when viewed from the longitudinal direction (A direction). Thereby, it is possible to suppress the pressing member 9 from being bent in the pressing direction (thickness direction).
- the holding member 9 is formed with a plurality of ribs 20 protruding toward the substrate 7 (chassis 5 side).
- the plurality of ribs 20 are formed by, for example, drawing.
- the plurality of ribs 20 are ribs 21 that press the back surface of the central portion 7c (see FIG. 3) of the substrate 7 and positions corresponding to the edge portions 7d of the substrate 7 of the pressing member 9 (positions immediately below the edge portions 7d). And a plurality of ribs 22 arranged in the above.
- the rib 21 is an example of the “second protrusion” in the present invention.
- the rib 21 is formed so as to have a protruding height that is the same as or slightly larger than the plurality of ribs 22.
- the rib 21 is formed at a position corresponding to the central portion 7c of the substrate 7 (a position directly below the central portion 7c) of the pressing member 9.
- the rib 21 is located at a position of the pressing member 9 corresponding to the element mounting portion 7a or 7b of the substrate 7 (a position directly below the element mounting portion 7a or 7b) or between the element mounting portions 7a and 7b of the substrate 7. It is preferable that it is formed at a position corresponding to the portion.
- the rib 22 is formed at a position corresponding to the edge portion 7d of the substrate 7 (a position directly below the edge portion 7d) of the pressing member 9.
- the rib 22 is formed at a position of the pressing member 9 corresponding to the rib 13 of the chassis 5 (a position directly below the rib 13).
- the rib 22 of the pressing member 9 and the edge portion 7d of the substrate 7 are fixed to the rib 13 of the chassis 5 using screws or the like (not shown).
- the chassis 5 with the rib 11 that contacts the semiconductor element 6a and the rib 12 that contacts the semiconductor element 6b
- the rib 11 and the semiconductor element 6a and 6b can have different thicknesses. All the semiconductor elements 6 (6a and 6b) are easily brought into contact with the chassis 5 (ribs 11 and 12) by setting the projecting height of each of 12 according to the thickness of the semiconductor elements 6a and 6b to be contacted. Can be made.
- the pressing member 9 that presses the central portion 7c of the substrate 7 toward the chassis 5 is provided.
- the pressing member 9 causes the semiconductor element 6a (or semiconductor element 6b) to be brought into contact with the contact portion 11a ( Or it can be made to contact the contact part 12a).
- the heat generated in the semiconductor element 6a (or the semiconductor element 6b) can be prevented from being dissipated to the chassis 5, so that the heat dissipation of the liquid crystal display device 1 can be prevented from being lowered.
- the semiconductor element 6a contacts the contact portion 11a (or the contact portion 12a). It becomes difficult.
- the semiconductor element 6a can be made to contact the contact part 11a (or contact part 12a) with the pressing member 9. FIG.
- the heat generated in the semiconductor element 6a can be prevented from being dissipated to the chassis 5, so that the heat dissipation of the liquid crystal display device 1 can be prevented from being lowered.
- the chassis 5 used for the liquid crystal display device 1 (electronic device) has high strength and is not easily deformed. For this reason, when the board
- the semiconductor element 6 since the semiconductor element 6 generates a large amount of heat, it is particularly effective to configure the liquid crystal display device 1 as described above.
- the rib 21 protruding toward the substrate 7 is formed on the pressing member 9, so that the central portion 7 c of the substrate 7 can be easily moved toward the chassis 5 by the pressing member 9. Can be pressed.
- the ribs 13 projecting toward the substrate 7 are provided at positions corresponding to the edge 7 d of the substrate 7 of the chassis 5, and the edge 7 d of the substrate 7 is connected to the chassis 5.
- the semiconductor element 6 (6a and 6b) can be arranged in the gap.
- the rib 21 is formed at a position corresponding to the element mounting portion 7a or 7b of the substrate 7 (a position directly below the element mounting portion 7a or 7b) or the substrate. 7 is formed at a position corresponding to the portion between the element mounting portions 7a and 7b, the semiconductor element 6 (6a and 6b) can be more reliably brought into contact with the ribs 11 and 12 by the pressing member 9.
- the heat conductive member 8 (8a and 8b) is disposed between the semiconductor element 6 (6a and 6b) and the ribs 11 and 12, thereby allowing the semiconductor element 6 ( Since the heat generated in 6a and 6b) can be easily transmitted (radiated) to the ribs 11 and 12, the heat dissipation of the liquid crystal display device 1 can be improved.
- the heat conductive member 8 (8a and 8b) disposed between the semiconductor element 6 (6a and 6b) and the ribs 11 and 12 can be elastically deformed.
- the protrusion height of the rib 11 is smaller than the design value
- the member 8b can be compressed and deformed (the thickness of the heat conducting member 8b is reduced).
- the rib 11 having a projection height smaller than the design value can be more reliably brought into contact with the semiconductor element 6a via the heat conducting member 8a.
- the pressing member 9 made of sheet metal is used in order to press the substrate 107 (semiconductor element 6) toward the chassis 105. A case where the screw 130 is used will be described.
- a rib 111 protruding to the substrate 107 side (outside) is formed between the rib 11 and the rib 12 in the chassis 105.
- the rib 111 has a protruding height smaller than that of the plurality of ribs 13.
- screw holes 111 a are formed in the rib 111.
- a screw thread may be formed in the screw hole 111a.
- the chassis 105 is an example of the “metal plate” in the present invention.
- a screw hole 107e is formed in the center portion 107c of the substrate 107 at a position corresponding to the screw hole 111a of the chassis 105.
- a screw 130 is attached to the screw hole 107e (substrate 107) and the screw hole 111a (chassis 105), and the screw 130 allows the central portion 107c (element mounting portions 7a and 7b (see FIG. 8)) of the substrate 107 to be formed.
- the intermediate portion is pressed toward the chassis 105 side. For this reason, the central portion 107c (the portion between the element mounting portions 7a and 7b) of the substrate 107 is curved toward the chassis 105 side.
- the screw 130 is an example of the “contact member” in the present invention.
- the edge 107d (see FIG. 8) of the substrate 107 is fixed to the rib 13 of the chassis 105 by using a screw or the like (not shown).
- the semiconductor element 6a and 6b can be easily brought into contact with the contact portions 11a and 12a by the screw 130. it can. Further, by using the screw 130, the liquid crystal display device can be reduced in size and weight as compared with the first embodiment.
- the band 230 is used to press the substrate 207 (semiconductor element 6) toward the chassis 205. Will be described.
- a rib 211 protruding to the substrate 207 side (outside) is formed between the rib 11 and the rib 12 in the chassis 205.
- the rib 211 has a protruding height smaller than that of the plurality of ribs 13.
- a band attachment hole 211 a is formed in the rib 211.
- the chassis 205 is an example of the “metal plate” in the present invention.
- a band attachment hole 207e is formed in the central portion 207c of the substrate 207 in the vicinity of the band attachment hole 211a of the chassis 205.
- a band 230 is attached to the band attachment hole 207e and the band attachment hole 211a, and the band 230 allows a central portion 207c of the substrate 207 (a portion between the element mounting portions 7a and 7b (see FIG. 11)) to be a chassis. It is pressed to the 205 side. For this reason, the central portion 207c (the portion between the element mounting portions 7a and 7b) of the substrate 207 is curved toward the chassis 205 side.
- the band 230 is an example of the “contact member” in the present invention.
- the band 230 may be formed of, for example, a binding band such as a tie wrap (registered trademark) or a heat contraction band that contracts by heat.
- a binding band such as a tie wrap (registered trademark) or a heat contraction band that contracts by heat.
- the remaining structure of the third embodiment is the same as that of the first and second embodiments.
- the semiconductor element 6a and 6b can be easily brought into contact with the contact portions 11a and 12a by the band 230. it can. Further, by using the band 230, the liquid crystal display device can be reduced in size and weight as compared with the first embodiment.
- a rib 311 that protrudes toward the substrate 307 (outside) is formed between the rib 11 and the rib 12 in the chassis 305.
- the rib 311 has a protruding height smaller than that of the plurality of ribs 13.
- the chassis 305 is an example of the “metal plate” in the present invention.
- an adhesive layer 330 is disposed between the rib 311 and the substrate 307, and the adhesive layer 330 causes the central portion 307c of the substrate 307 (a portion between the element mounting portions 7a and 7b) (see FIG. 13). Is curved toward the chassis 305 side. For this reason, the semiconductor element 6 is pressed against the ribs 11 and 12 of the chassis 305.
- the adhesive layer 330 is an example of the “contact member” and the “first adhesive layer” in the present invention.
- the curvature of the substrate 307 is maintained by curing the adhesive layer 330 in a state where the central portion 307c of the substrate 307 is curved toward the chassis 305.
- the remaining structure of the fourth embodiment is the same as that of the first to third embodiments.
- the semiconductor elements 6a and 6b can be easily brought into contact with the contact portions 11a and 12a.
- the chassis 405 includes a plurality of protrusions 411 and 412 that protrude toward the substrate 7 (outside), a plurality of ribs 13, and a plurality of fins that function as heat dissipation fins. Portions 413 and 414 are formed.
- the chassis 405 is an example of the “metal plate” in the present invention, and the protrusions 411 and 412 are examples of the “first protrusion” and the “radiating fin” in the present invention.
- the fin portions 413 and 414 are an example of the “radiating fins” in the present invention.
- the plurality of protrusions 411 and 412 are in contact with the semiconductor element 6 through the heat conducting member 8.
- the plurality of protrusions 411 and 412 are formed to have different protrusion heights.
- the protrusion 412 has a protrusion height smaller than that of the protrusion 411.
- the protrusion 411 is formed at a position facing the semiconductor element 6a
- the protrusion 412 is formed at a position facing the semiconductor element 6b.
- the protrusion part 411 contains the contact part 411a contacted with the semiconductor element 6 (heat conduction member 8), and the spring part 411b which urges
- the spring part 411b connects the contact part 411a and the flat part 405a of the chassis 405 (parts of the chassis 405 other than the protruding parts 411 and 412, the ribs 13, and the fin parts 413 and 414).
- the protruding portion 412 includes a contact portion 412a that is in contact with the semiconductor element 6 (heat conducting member 8) and a spring portion 412b that biases the contact portion 412a toward the semiconductor element 6 side.
- the spring portion 412b connects the contact portion 412a and the flat portion 405a of the chassis 405.
- the protrusions 411 and 412 are formed by cutting out and bending a part of the chassis 405. Specifically, as shown in FIG. 15, for example, U-shaped cutout portions 405 b and 405 c are formed around the protruding portions 411 and 412, respectively. And the protrusion parts 411 and 412 are formed by bending in the position of the broken line of FIG.
- the upper surface (front surface) of the heat conductive member 8 is disposed in the contact portion 411 a of the protruding portion 411 in a state where the substrate 7 is not fixed to the chassis 405. It is formed so as to be located on the outer side (lower side) than the predetermined position. Thereby, the contact portion 411a can be reliably brought into contact with the heat conducting member 8 (semiconductor element 6) in a state where the substrate 7 is fixed to the chassis 405 (state shown in FIG. 14).
- the spring portion 411b of the protruding portion 411 is elastically deformed, so that the contact pressure of the contact portion 411a on the heat conducting member 8 (semiconductor element 6) is prevented from becoming too large. Is possible.
- the contact portion 412a of the protruding portion 412 is positioned outside (lower) than the position where the upper surface (front surface) of the heat conducting member 8 is to be arranged in a state where the substrate 7 is not fixed to the chassis 405. It is formed to do. Thereby, the contact portion 412a can be reliably brought into contact with the heat conducting member 8 (semiconductor element 6) in a state where the substrate 7 is fixed to the chassis 405.
- the spring portion 412b of the protruding portion 412 is elastically deformed, so that the contact pressure of the contact portion 412a on the heat conducting member 8 (semiconductor element 6) is prevented from becoming too large. Is possible.
- through holes 411c and 412c may be formed in the contact portions 411a and 412a, respectively.
- the plurality of fin portions 413 and 414 are formed by cutting out a part of the chassis 405 and bending it. Specifically, as shown in FIG. 15, for example, U-shaped cutout portions 405 d and 405 e are formed around the fin portions 413 and 414, respectively. And the fin parts 413 and 414 are formed by bending in the position of the dashed-two dotted line of FIG.
- the fin portions 413 and 414 by bending the fin portions 413 and 414, the gap between the fin portions 413 and 414 and the flat portion 405a of the chassis 405 is increased, so that air flow (air flow) is improved. And since the fin parts 413 and 414 are provided in the part where air is good, it becomes possible to improve heat dissipation more.
- a gap is also formed around the protrusions 411 and 412, and the protrusions 411 and 412 also function as heat radiating fins.
- a heat radiating fan (not shown) may be provided separately in order to further improve the heat dissipation. In this case, it is preferable to dispose a heat radiating fan so that the wind directly hits the protruding portions 411 and 412 and the fin portions 413 and 414.
- the remaining structure of the fifth embodiment is similar to that of the aforementioned first to fourth embodiments.
- the semiconductor element can be easily formed. 6a and 6b can be brought into contact with the contact portions 411a and 412a.
- the protruding portions 411 and 412 are formed by bending the chassis 405 as described above.
- the chassis 405 can be easily formed with portions (protruding portions 411 and 412) protruding toward the semiconductor element 6 (6a and 6b), and the contact portions 411a and 412a are provided on the protruding portions 411 and 412.
- Spring portions 411b and 412b that are biased toward the semiconductor element 6 (6a and 6b) can be easily formed.
- the protruding portions 411 and 412 can be formed at arbitrary positions on the chassis 405.
- the heat dissipation of the liquid crystal display device can be further improved by providing the fins 413 and 414 in the chassis 405.
- the protrusions 411 and 412 also function as heat radiation fins, the heat dissipation of the liquid crystal display device can be further improved.
- the fin portions 413 and 414 can be easily formed in the chassis 405 by providing the cutout portions 405d and 405e in the chassis 405 as described above.
- the semiconductor element 6 (6a and 6b) It can be confirmed from the chassis 405 side whether the heat conductive member 8 (8a and 8b) is arrange
- the chassis 505 includes a plurality of protrusions 511 and 512 that protrude toward the substrate 7 (outside), a plurality of ribs 13, and a plurality of fin portions 413 and 414. Is formed.
- the chassis 505 is an example of the “metal plate” in the present invention, and the protrusions 511 and 512 are examples of the “first protrusion” and the “radiating fin” in the present invention.
- the plurality of protrusions 511 and 512 are formed to have different protrusion heights.
- the protrusion 512 has a protrusion height smaller than that of the protrusion 511.
- the protruding portion 511 is formed at a position facing the semiconductor element 6a
- the protruding portion 512 is formed at a position facing the semiconductor element 6b.
- the protrusion 511 includes a contact portion 511a and a spring portion 511b that urges the contact portion 511a toward the semiconductor element 6 side.
- the protruding portion 512 includes a contact portion 512a and a spring portion 512b that urges the contact portion 512a toward the semiconductor element 6 side.
- U-shaped cutouts 505 b and 505 c are formed around the protrusions 511 and 512, respectively, and the protrusions 511 and 512 bend a part of the chassis 505. It is formed by letting.
- the cutout portions 505b and 505c are examples of the “cutout portion” in the present invention.
- leaf springs 540 and 541 formed of, for example, copper or aluminum are attached to a predetermined region of the chassis 505.
- the leaf springs 540 and 541 are examples of the “first heat conducting member” in the present invention.
- the leaf spring 540 is disposed so as to straddle the cutout portion 505b.
- the leaf spring 540 is curved and is formed so as to be sandwiched between the protruding portion 511 and the heat conducting member 8 (semiconductor element 6).
- the plate spring 540 is formed by spot welding the welded portion 540a, for example, so that the flat portion 505a of the chassis 505 (the portion of the chassis 505 other than the protruding portions 511 and 512, the ribs 13, and the fin portions 413 and 414). It is fixed to.
- the leaf spring 540 is in contact with the protruding portion 511 and the flat portion 505a of the chassis 505.
- the flat portion 505a is an example of the “part other than the first protruding portion of the metal plate” in the present invention.
- the leaf spring 541 is disposed so as to straddle the cutout portion 505c.
- the leaf spring 541 is curved and is formed so as to be sandwiched between the protruding portion 512 and the heat conducting member 8 (semiconductor element 6).
- the leaf spring 541 is fixed to the flat portion 505a of the chassis 505 by spot welding the welded portion 541a, for example.
- the leaf spring 541 is in contact with the protruding portion 512 and the flat portion 505a of the chassis 505.
- the leaf springs 540 and 541 are positioned outside (lower) than the position where the upper surface (front surface) of the heat conducting member 8 is to be arranged in a state where the substrate 7 is not fixed to the chassis 505. Is formed.
- the contact portion 511a can be reliably brought into contact with the heat conducting member 8 (semiconductor element 6) via the leaf spring 540, and the contact portion 512a. Can be reliably brought into contact with the heat conducting member 8 (semiconductor element 6) via the leaf spring 541.
- the leaf springs 540 and 541 are formed in a rectangular shape when seen in a plan view, but may be formed in a triangular shape, a circular shape, a polygonal shape, or the like.
- the protruding portion 511 may be disposed so as to be sandwiched between the leaf spring 540 and the heat conducting member 8 (semiconductor element 6).
- the protruding portion 512 may be disposed so as to be sandwiched between the leaf spring 541 and the heat conducting member 8 (semiconductor element 6).
- the remaining structure of the sixth embodiment is similar to that of the aforementioned first to fifth embodiments.
- the leaf spring 540 is provided so as to straddle the cutout portion 505b and to be in contact with the protruding portion 511 and the flat portion 505a.
- the heat generated in the semiconductor element 6a is transmitted (heat dissipated) in the direction in which the cutout portion 505b is not formed, as described above.
- the leaf spring 540 By providing the leaf spring 540, the heat generated in the semiconductor element 6a is divided into the direction in which the cutout portion 505b is not formed and the direction in which the cutout portion 505b is formed (the direction in which the leaf spring 540 is provided). It can be transmitted (heat radiation). Thereby, the heat dissipation of a liquid crystal display device can be improved.
- a leaf spring 541 is provided across the cutout portion 505c and in contact with the protruding portion 512 and the flat portion 505a.
- the heat generated in the semiconductor element 6b is transmitted (dissipated) in the direction in which the cutout portion 505c is not formed, as described above.
- the leaf spring 541 the heat generated in the semiconductor element 6b is transferred in the direction in which the cutout portion 505c is not formed and the direction in which the cutout portion 505c is formed (the direction in which the leaf spring 541 is provided). It can be transmitted (heat radiation). Thereby, the heat dissipation of a liquid crystal display device can be improved more.
- the chassis 605 corresponds to the ribs 11 and 12 protruding to the board 7 side (outside) and the edge 7 d of the board 7 of the chassis 605 (see FIG. 21). And a plurality of ribs 613 arranged at positions to be moved.
- the chassis 605 is an example of the “metal plate” in the present invention
- the rib 613 is an example of the “third projecting portion” in the present invention.
- an elastic body 650 for adjusting the distance from the chassis 605 (ribs 613, 11 and 12) to the substrate 7 is disposed between the rib 613 and the substrate 7.
- the elastic body 650 is made of, for example, silicone rubber, nylon, or urethane rubber, and can be elastically deformed.
- the elastic body 650 is an example of the “first elastic body” in the present invention.
- screw holes 613a are formed in the rib 613.
- a screw thread is formed in the screw hole 613a.
- screw holes 650 a, 7 e, and 22 a are formed in the elastic body 650, the substrate 7, and the rib 22 of the pressing member 9 at positions corresponding to the screw holes 613 a of the chassis 605.
- screws 660 are attached to the screw holes 613 a, 650 a, 7 e and 22 a (see FIG. 21), and the pressing member 9 and the substrate 7 together with the elastic body 650 are chassis by the screws 660. 605 is fixed.
- the elastic body 650 is deformed (compressed) to a predetermined thickness by being tightened by a screw 660.
- the remaining structure of the seventh embodiment is similar to that of the aforementioned first to sixth embodiments.
- the elastic body 650 for adjusting the distance from the chassis 605 to the substrate 7 is provided between the rib 613 and the substrate 7. Thereby, since the distance from the contact portions 11a and 12a (ribs 11 and 12) to the substrate 7 can be adjusted, the contact pressure between the semiconductor element 6 (6a and 6b) and the contact portions 11a and 12a is adjusted. Can do.
- the chassis 705 includes openings 705 a and 705 b formed around the portion to which the plurality of protruding members 711 and 712 are attached, and a plurality of ribs 13. .
- the chassis 705 is an example of the “metal plate” in the present invention, and the projecting members 711 and 712 are examples of the “first projecting portion” in the present invention.
- a plurality of screw holes 705c are formed around the openings 705a and 705b of the chassis 705.
- projecting members 711 and 712 projecting toward the substrate 7 are attached to the chassis 705 so as to close the openings 705a and 705b.
- an elastic body 750 for adjusting the distance from the protruding member 711 to the chassis 705 is disposed between the protruding member 711 and the chassis 705.
- an elastic body 751 for adjusting the distance from the protruding member 712 to the chassis 705 is disposed between the protruding member 712 and the chassis 705.
- the elastic bodies 750 and 751 are made of, for example, silicone rubber, nylon or urethane rubber, and can be elastically deformed.
- the elastic bodies 750 and 751 are examples of the “second elastic body” in the present invention.
- screw holes 750a, 751a, 711a, and 712a are formed in the elastic bodies 750 and 751 and the protruding members 711 and 712 at positions corresponding to the screw holes 705c of the chassis 705, respectively. . Note that screw holes are formed in the screw holes 711a and 712a.
- screws 760 are attached to the screw holes 705c, 750a, 751a, 711a, and 712a (see FIG. 23), and the protruding members 711 and 712 are elastic bodies 750 by the screws 760, respectively. And 751 together with the chassis 705.
- the elastic bodies 750 and 751 are deformed (compressed) to a predetermined thickness by being tightened by the screws 760.
- the protruding members 711 and 712 are formed to have a thickness smaller than that of the chassis 705. However, the protruding members 711 and 712 have the same thickness as the chassis 705 or a thickness larger than the chassis 705. It may be formed.
- the openings 705a and 705b may not be formed in the chassis 705.
- the other structure of the eighth embodiment is the same as that of the first to seventh embodiments.
- the projecting members 711 and 712 are attached to the chassis 705 via the elastic bodies 750 and 751, respectively. Thereby, since the distance from the protruding members 711 and 712 to the chassis 5 can be adjusted, the distance from the protruding members 711 and 712 to the substrate 7 can be adjusted. Thereby, the contact pressure between the semiconductor element 6 (6a and 6b) and the protruding members 711 and 712 can be adjusted.
- the display device is applied to a liquid crystal display device.
- the present invention is not limited thereto, and may be applied to a display device other than the liquid crystal display device.
- the electronic device is applied to a display device.
- the present invention is not limited thereto, and can be applied to various electronic devices such as a portable device, a household electric machine, or a solar battery. is there.
- the liquid crystal display device is formed by a direct-type backlight device.
- the present invention is not limited thereto, and the liquid crystal display device is formed by a sidelight-type backlight device. May be.
- the present invention is not limited to this, and even when the thickness of the semiconductor element, the thickness of the heat conducting member, or the mounting height of the semiconductor element is reduced or increased due to manufacturing variations, the semiconductor element is incorporated into the chassis. It is possible to make contact.
- heat conductive member was shown about the example formed with the heat radiating sheet (heat conductive sheet) which has high heat conductivity, this invention is not limited to this,
- a heat conductive member is high heat conduction. It may be formed by heat dissipation grease having a high rate (for example, silicone grease).
- substrate are used using fixing members other than a screw. It may be fixed to the chassis.
- the through hole is formed in the contact portion.
- the present invention is not limited thereto, and in another embodiment, the through hole may be formed in the contact portion.
- the present invention is not limited to this, and the substrate is formed using an adhesive tape.
- the semiconductor element may be brought into contact with the chassis by pulling the (semiconductor element) toward the chassis or by pressing the substrate (semiconductor element) toward the chassis using an attractive force or repulsive force such as a magnet.
- the present invention is not limited to this, and for example, the frame (electronic device) of the television receiver is used.
- the substrate may be pressed toward the chassis by a frame to be stored. In this case, since it is not necessary to provide a pressing member separately, the number of parts can be reduced.
- the contact portion is formed flat.
- the present invention is not limited to this, and the contact portion may be formed in a spherical shape or a mountain shape (wave shape). If comprised in this way, it is possible to adjust the contact pressure of a contact part and a semiconductor element.
- the present invention is not limited thereto, and for example, the chassis (metal plate) according to the second modification of the present invention illustrated in FIG. ) 905, the spring portion 911b may be formed by a part 911a of the projecting part (first projecting part, radiating fin) 911 and a part 905b of the flat part 905a.
- the protrusion member containing a contact part and a spring part is a chassis. You may attach to.
- leaf spring first heat conducting member
- protrusion first protrusion, radiating fin
- leaf springs first heat conducting members
- the present invention is not limited to this, and a heat conducting member other than the leaf spring may be attached.
- metal tape such as copper tape is applied to the protrusions (first protrusions, heat radiation fins) 1111 and 1112 of the chassis (metal plate) 1105.
- the heat conducting members 1140 and 1141 may be attached respectively.
- the present invention is not limited thereto, and You may arrange
- the adhesive layer (second adhesive layer) 1250 and the thermal conductive member 8 (8a and 8b) and the ribs 11 and 12 are provided. 1251 may be arranged.
- the heat conduction member 8 (8a and 8b) and the ribs 11 and 12 can be kept in good contact with each other, so that heat generated in the semiconductor element 6 (6a and 6b) can be generated by the ribs 11 and 12.
- the heat dissipation of a liquid crystal display device can be improved more.
- openings 1250a and 1251a are formed in the central portions of the adhesive layers 1250 and 1251, respectively, and the adhesive layers 1250 and 1251 are disposed only in the peripheral portions of the heat conducting member 8 (8a and 8b). Good.
- the openings 1250a and 1251a may not be formed in the adhesive layers 1250 and 1251, and the adhesive layers 1250 and 1251 may be disposed on the entire surface of the heat conducting member 8 (8a and 8b).
- the adhesive layers 1250 and 1251 can be easily formed, for example, by applying an adhesive or applying a double-sided tape to the heat conducting member 8 (8a and 8b).
- the present invention is not limited thereto, and for example, a television according to a sixth modification of the present invention illustrated in FIG.
- a holding member may be provided separately from the liquid crystal display device 1 like a John receiver.
- the television receiver is constituted by a liquid crystal display device 1 and a support member 1301 made of, for example, a sheet metal that supports the liquid crystal display device 1.
- ribs 21 and 22 are formed on the support member 1301 in the same manner as the pressing member 9. That is, the support member 1301 is also used as a pressing member (contact member).
- a television receiver according to a seventh modification of the present invention shown in FIG. 32 may be configured.
- reinforcing ribs 1302 are formed on the support member 1301.
- the reinforcing rib 1302 is preferably formed in the vicinity of the rib 21, and more preferably formed so as to pass through the rib 21.
- the strength of the support member 1301 can be improved, so that it is possible to further suppress the occurrence of poor contact between the semiconductor element 6 and the chassis 5.
- a television receiver according to an eighth modification of the present invention shown in FIG. 34 may be configured.
- a plurality of fin portions 1303 that function as heat radiating fins are formed on the support member 1301.
- the fin portion 1303 is formed in the peripheral portion of the rib 21.
- the fin portion 1303 is formed by bending a part of the support member 1301, and an opening is formed in the bent portion.
- the fin portion 1303 is an example of the “radiating fin” in the present invention.
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Abstract
Description
図1~図5を参照して、本発明の第1実施形態による液晶表示装置1の構造について説明する。
この第2実施形態では、図6~図8を参照して、上記第1実施形態と異なり、基板107(半導体素子6)をシャーシ105側に押圧するために、板金製の押さえ部材9に代えてネジ130を用いる場合について説明する。
この第3実施形態では、図9~図11を参照して、上記第1および第2実施形態と異なり、基板207(半導体素子6)をシャーシ205側に押圧するために、バンド230を用いる場合について説明する。
この第4実施形態では、図12および図13を参照して、上記第1~第3実施形態と異なり、半導体素子6をシャーシ305に接触させるために、接着層330を用いる場合について説明する。
この第5実施形態では、図14~図17を参照して、上記第1~第4実施形態と異なり、半導体素子6を接触部411aおよび412aに接触させるために、バネ部411bおよび412bを設ける場合について説明する。
この第6実施形態では、図18および図19を参照して、上記第5実施形態と異なり、シャーシ505に板バネ540および541が取り付けられている場合について説明する。
この第7実施形態では、図20および図21を参照して、上記第1~第6実施形態と異なり、シャーシ605と基板7との間に弾性体650が設けられている場合について説明する。
この第8実施形態では、図22および図23を参照して、上記第7実施形態と異なり、シャーシ705に弾性体750および751を介して突出部材711および712が設けられている場合について説明する。
5、105、205、305、405、505、605、705、805、905、1005、1105 シャーシ(金属板)
6、6a、6b 半導体素子
7、107、207、307 基板
7a、7b 素子搭載部
7c、107c、207c、307c 中央部
7d、107d 縁部
8、8a、8b 熱伝導部材(第2熱伝導部材)
9 押さえ部材(接触用部材)
11、12 リブ(第1突出部)
11a、12a、411a、412a、511a、512a 接触部
13、613、813 リブ(第3突出部)
21 リブ(第2突出部)
130 ネジ(接触用部材)
230 バンド(接触用部材)
330 接着層(接触用部材、第1接着層)
505a 平面部(金属板の第1突出部以外の部分)
505b、505c 切抜き部
411、412、511、512、811、812、911、1011、1012、1111、1112 突出部(第1突出部、放熱フィン)
411c、412c 貫通孔
411b、412b、511b、512b バネ部(接触用部材)
413、414 フィン部(放熱フィン)
540、541、1040、1041、1042、1043 板バネ(第1熱伝導部材)
650 弾性体(第1弾性体)
711、712 突出部材(第1突出部)
750、751 弾性体(第2弾性体)
1140、1141 金属テープ(第1熱伝導部材)
1250、1251 接着層(第2接着層)
1301 支持部材(接触用部材)
1303 フィン部(放熱フィン)
Claims (22)
- 半導体素子と、
前記半導体素子が取り付けられる基板と、
前記基板に対向配置され、前記半導体素子側に突出する第1突出部が設けられた金属板とを備え、
前記第1突出部は、前記半導体素子に接触される接触部を含み、
少なくとも前記基板の中央部に対応する位置には、前記半導体素子を前記接触部に接触させるための接触用部材が設けられていることを特徴とする電子機器。 - 前記接触用部材は、前記基板の中央部を前記金属板側に押圧する機能を有することを特徴とする請求項1に記載の電子機器。
- 前記接触用部材は、前記基板の前記金属板とは反対の面側に配置され、前記基板の中央部を前記金属板側に押圧する押さえ部材を含むことを特徴とする請求項2に記載の電子機器。
- 前記押さえ部材は、前記基板側に突出し、前記基板の中央部を押圧する第2突出部を含むことを特徴とする請求項3に記載の電子機器。
- 前記接触用部材は、前記基板と前記金属板とに取り付けられるネジおよびバンドの少なくとも一方を含むことを特徴とする請求項2に記載の電子機器。
- 前記接触用部材は、少なくとも前記第1突出部に設けられ、前記接触部を前記半導体素子側に付勢するバネ部を含むことを特徴とする請求項1に記載の電子機器。
- 前記第1突出部は、前記金属板を折り曲げることにより形成されていることを特徴とする請求項6に記載の電子機器。
- 前記金属板の前記第1突出部の周囲には、切抜き部が形成されており、
前記金属板には、前記切抜き部を跨ぎ、かつ、前記第1突出部と前記金属板の前記第1突出部以外の部分とに接触される第1熱伝導部材が設けられていることを特徴とする請求項6または7に記載の電子機器。 - 前記接触用部材は、前記基板と前記金属板とを接着する第1接着層を含むことを特徴とする請求項1に記載の電子機器。
- 前記金属板の、前記基板の縁部に対応する位置には、前記基板側に突出する第3突出部が設けられており、
前記基板の縁部は、前記金属板の第3突出部に取り付けられていることを特徴とする請求項1~9のいずれか1項に記載の電子機器。 - 前記第3突出部と前記基板との間には、前記金属板から前記基板までの距離を調節するための第1弾性体が設けられていることを特徴とする請求項10に記載の電子機器。
- 前記第1突出部は、前記第1突出部から前記金属板までの距離を調節するための第2弾性体を介して、前記金属板に取り付けられていることを特徴とする請求項1~11のいずれか1項に記載の電子機器。
- 前記金属板には、放熱フィンが設けられていることを特徴とする請求項1~12のいずれか1項に記載の電子機器。
- 前記放熱フィンは、前記金属板を切り抜くことにより形成されていることを特徴とする請求項13に記載の電子機器。
- 前記半導体素子は、複数設けられており、
前記基板は、複数の前記半導体素子が取り付けられる複数の素子搭載部を含み、
前記接触用部材は、前記素子搭載部に対応する位置、および、前記複数の素子搭載部同士の間の部分に対応する位置の少なくとも一方に設けられていることを特徴とする請求項1~14のいずれか1項に記載の電子機器。 - 前記半導体素子と前記第1突出部との間には、第2熱伝導部材が配置されており、
前記第1突出部は、前記第2熱伝導部材を介して前記半導体素子に接触されていることを特徴とする請求項1~15のいずれか1項に記載の電子機器。 - 前記接触部には、貫通孔が形成されていることを特徴とする請求項16に記載の電子機器。
- 前記第2熱伝導部材と前記第1突出部との間には、第2接着層が配置されていることを特徴とする請求項16または17に記載の電子機器。
- 請求項1~18に記載の電子機器を備えることを特徴とする表示装置。
- 請求項19に記載の表示装置と、
前記表示装置を支持する支持部材とを備えることを特徴とするテレビジョン受像機。 - 前記支持部材は、前記基板の中央部を前記金属板側に押圧する前記接触用部材を含むことを特徴とする請求項20に記載のテレビジョン受像機。
- 前記支持部材には、放熱フィンが設けられていることを特徴とする請求項21に記載のテレビジョン受像機。
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JP2012520358A JP5514309B2 (ja) | 2010-06-14 | 2011-05-30 | 電子機器、表示装置およびテレビジョン受像機 |
EP11795546A EP2557592A1 (en) | 2010-06-14 | 2011-05-30 | Electronic device, display device, and television receiver |
CN2011800243224A CN102906869A (zh) | 2010-06-14 | 2011-05-30 | 电子设备、显示装置和电视接收机 |
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EP (1) | EP2557592A1 (ja) |
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KR101995869B1 (ko) | 2012-10-31 | 2019-10-02 | 삼성전자주식회사 | 디스플레이 모듈 및 이를 갖춘 디스플레이 장치 |
US10383253B1 (en) | 2018-03-27 | 2019-08-13 | Nio Usa, Inc. | Sealable multi-surface electronics thermal conduction package |
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KR102615050B1 (ko) * | 2019-01-16 | 2023-12-19 | 삼성전자주식회사 | 디스플레이 장치 |
JP2020123415A (ja) * | 2019-01-30 | 2020-08-13 | 株式会社東芝 | ディスク装置 |
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US9209107B2 (en) | 2015-12-08 |
US20130057784A1 (en) | 2013-03-07 |
CN102906869A (zh) | 2013-01-30 |
EP2557592A1 (en) | 2013-02-13 |
JP5514309B2 (ja) | 2014-06-04 |
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