WO2011152620A2 - Support électrostatique et dispositif de traitement de substrat le comprenant - Google Patents

Support électrostatique et dispositif de traitement de substrat le comprenant Download PDF

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Publication number
WO2011152620A2
WO2011152620A2 PCT/KR2011/003625 KR2011003625W WO2011152620A2 WO 2011152620 A2 WO2011152620 A2 WO 2011152620A2 KR 2011003625 W KR2011003625 W KR 2011003625W WO 2011152620 A2 WO2011152620 A2 WO 2011152620A2
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WO
WIPO (PCT)
Prior art keywords
layer
electrostatic
heat
substrate
heat generating
Prior art date
Application number
PCT/KR2011/003625
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English (en)
Korean (ko)
Other versions
WO2011152620A3 (fr
Inventor
조상범
최명호
최진식
Original Assignee
주식회사 코미코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코미코 filed Critical 주식회사 코미코
Priority to JP2012539829A priority Critical patent/JP5276751B2/ja
Publication of WO2011152620A2 publication Critical patent/WO2011152620A2/fr
Publication of WO2011152620A3 publication Critical patent/WO2011152620A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present invention relates to an electrostatic chuck and a substrate processing apparatus including the same, including an electrostatic chuck for fixing a substrate, such as a wafer or a glass plate, used for manufacturing an integrated circuit device, using electrostatic power, and the same.
  • An apparatus for processing a substrate including an electrostatic chuck for fixing a substrate, such as a wafer or a glass plate, used for manufacturing an integrated circuit device, using electrostatic power, and the same.
  • integrated circuit devices are manufactured by performing a deposition process, an etching process, a photolithography process, an ion implantation process, and the like on a substrate such as a wafer or a glass plate, and examples thereof include semiconductor devices or display devices. Can be.
  • the etching process may include a process chamber providing a space for performing the gas, a gas providing unit connected to the process chamber from the outside to provide a process gas corresponding to the etching process to the inside of the process chamber, and
  • the process is performed by a substrate processing apparatus including an electrostatic chuck which is disposed inside the process chamber and supports the substrate and is fixed using electrostatic power.
  • the electrostatic chuck includes an electrostatic layer on which the substrate is placed while an electrostatic electrode generating electrostatic power is disposed, and a heat generating layer on which a heating electrode for heating the substrate is disposed below the electrostatic layer.
  • the heat generating electrode is uniformly disposed in the form of spirals or irregularities when viewed in a plan view, and has a high electrical conductivity and a high thermal conductivity for heat generation.
  • the heat generating layer has high electrical resistance because the role of insulating the heat generating electrode between the heat generating electrodes is very important.
  • the heating layer has low thermal conductivity along with high electrical resistance for the insulating role, heat from the heating electrode may not be smoothly transferred to the interface of the substrate, and thus the substrate may not be uniformly heated. have.
  • An object of the present invention is to provide an electrostatic chuck capable of uniformly heating the substrate while supporting and fixing the substrate using electrostatic force.
  • Another object of the present invention is to provide a substrate processing apparatus including the electrostatic chuck described above.
  • an electrostatic chuck includes an electrostatic layer and a heat generating layer.
  • the electrostatic layer has a first heat transfer coefficient while the electrostatic electrode generating the electrostatic force is disposed to fix the substrate placed thereon.
  • the heat generating layer is disposed below the electrostatic layer, and has a second heat transfer coefficient higher than the first heat transfer coefficient while a heat generating electrode for heating the substrate is disposed.
  • the heat generating layer may be made of a ceramic material including magnesia (MgO), yttria (Y 2 O 3 ) alone or a mixture thereof in aluminum nitride (AlN).
  • the second heat transfer coefficient may be 150 to 250 W / (m ⁇ K).
  • the heating layer may have the same thickness as the heating electrode and have a structure surrounding the side surface of the heating electrode.
  • the electrostatic layer may have a thickness of 1 to 5mm.
  • the electrostatic chuck may further include a heat insulation layer disposed below the heat generating layer and having a third heat transfer coefficient lower than the first heat transfer coefficient.
  • the heat insulation layer may have a thickness of 0.05 to 0.5mm.
  • the upper surface of the heating layer may be disposed in contact with the lower surface of the electrostatic layer, the lower surface of the heating layer may be disposed in contact with the upper surface of the heat insulating layer.
  • a substrate processing apparatus includes a process chamber, a gas providing unit and an electrostatic chuck.
  • the process chamber provides space for processing a substrate.
  • the gas providing unit is connected to the process chamber and provides a process gas for processing the substrate into the process chamber.
  • the electrostatic chuck is disposed inside the process chamber and is fixed while supporting a substrate to be processed through the process gas.
  • the electrostatic chuck has an electrostatic layer having a first heat transfer coefficient and an electrostatic layer having a first heat transfer coefficient while the electrostatic chuck is placed on top of the substrate and generates an electrostatic force for fixing the substrate, and heats the substrate.
  • the heat generating electrode may include a heat generating layer having a second heat transfer coefficient higher than the first heat transfer coefficient.
  • the heating layer may have the same thickness as the heating electrode and may have a structure surrounding the side surface of the heating electrode.
  • the upper surface of the heat generating layer may be disposed in contact with the lower surface of the electrostatic layer, and the lower surface of the heat generating layer may be disposed in contact with the upper surface of the heat insulating layer.
  • heat generation for heating the substrate under the electrostatic layer having the first heat transfer coefficient while the electrostatic electrode generating the electrostatic force is disposed to fix the substrate placed thereon By configuring the heat generating layer on which the electrode is disposed to have a second heat transfer coefficient higher than the first heat transfer coefficient, the heat generated from the heat generating electrode is preferentially uniformly spread in the heat generating layer, and then the relatively low first heat transfer coefficient By being provided to the substrate through the electrostatic layer having a, it is possible to uniformly heat the substrate.
  • FIG. 1 is a configuration diagram schematically showing an electrostatic chuck according to an embodiment of the present invention.
  • FIG. 2 is a view illustrating in detail the electrostatic layer, the heating layer and the heat insulating layer in the electrostatic chuck of FIG.
  • FIG. 3 is a configuration diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.
  • FIG. 1 is a configuration diagram schematically showing an electrostatic chuck according to an embodiment of the present invention
  • Figure 2 is a view showing in detail the electrostatic layer, the heating layer and the heat insulating layer in the electrostatic chuck of FIG.
  • an electrostatic chuck 100 includes an electrostatic layer 200, a heat generating layer 300, a heat insulating layer 400, and a support body 500.
  • the electrostatic layer 200 supports the substrate 10 placed thereon.
  • the substrate 10 may be a wafer or glass plate for manufacturing a semiconductor device or a display device of an integrated circuit device.
  • an electrostatic electrode 210 for generating electrostatic force is disposed to fix the substrate 10.
  • the electrostatic electrode 210 may be buried in a wide plate form inside the electrostatic layer 200.
  • the electrostatic electrode 210 may be made of tungsten (W) or molybdenum (Mo) having a low coefficient of thermal expansion.
  • the electrostatic layer 200 is made of an insulating ceramic material.
  • the electrostatic layer 200 may be made of alumina (Al 2 O 3 ) or yttria (Y 2 O 3 ) as a base material.
  • the electrostatic layer 200 may have a form in which magnesia (MgO) or silicon oxide (SiO 2 ) is added to alumina (Al 2 O 3 ) in an amount of about 90 to 96%, or about 90% or more. It may have a form in which alumina (Al 2 O 3 ) is added to tria (Y 2 O 3 ).
  • the electrostatic layer 200 has a volume resistance of about 10 14 to 10 16 ⁇ cm, which indicates high insulation, and may have a first heat transfer coefficient of about 10 to 30 W / (m ⁇ K).
  • the heat generating layer 300 is disposed under the electrostatic layer 200.
  • the heating layer 300 is provided with a heating electrode 310 for generating heat in order to heat the substrate 10.
  • the heating electrode 310 has a thickness of about 0.005 to 0.3 mm, a width of about 0.5 to 10 mm, and a length of about 3 to 30 m so as to have a resistance of about 1 to 100 kPa for heating the substrate 10 to about 0 to 100 ° C. It can be configured as. Accordingly, the heating electrode 310 may be uniformly disposed in the form of a spiral or an uneven shape when viewed in plan view.
  • the heating electrode 310 is made of metal paste such as silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), or titanium (Ti) to form the substrate 10. It is possible to implement a temperature for heating.
  • the heating electrode 310 may be made of a powder material such as tungsten (W), molybdenum (Mo), or titanium (Ti), and may include gold (Au), nickel (Ni), titanium (Ti), or nitride. It may be manufactured through a thin film material such as titanium (TiN).
  • the heating layer 300 has a structure surrounding the side surface of the heating electrode 310.
  • the heating layer 300 preferably has the same thickness t1 as the heating electrode 310 so as to surround all front sides of the heating electrode 310.
  • the heat generating layer 300 is exposed to the upper and lower surfaces of the top and bottom, the top surface is in contact with the electrostatic layer 200, the bottom surface is in contact with the heat insulating layer 400. That is, the upper surface of the heating layer 300 is in contact with the lower surface of the electrostatic layer 200, and the lower surface of the heating layer 300 is in contact with the upper surface of the heat insulating layer 400.
  • the heat generating layer 300 when the heat generating layer 300 surrounds the side surface of the heat generating electrode 310, the thermal conductivity of the heat generating layer 300 increases, and as a result, the heat generating layer 300 itself also has an advantage of acting as a heat generating electrode. That is, since the heat generating layer 300 has a structure surrounding the side surface of the heat generating electrode 310, a portion serving as the heat generating electrode 310 is enlarged.
  • the thickness t1 of the heating layer 300 may be configured to be thicker than that of the heating electrode 310. At this time, when the thickness t1 of the heat generating layer 300 exceeds about 1.5 times that of the heat generating electrode 310, excessive heat is generated from the heat generating electrode 310 to heat the substrate 10 to about 0 to 100 ° C. In addition, the thickness t1 is too thick to efficiently transfer heat to the electrostatic layer 200 and the substrate 10, and the heating electrode 310 may be damaged due to excessive thermal stress. have. Therefore, the thickness t1 of the heat generating layer 300 is preferably configured to be about 1.5 times thicker than the heat generating electrode 310.
  • the heat generating layer 300 is made of an insulating ceramic material so as to be insulated from each other at portions facing each other of the heating electrode 310 having a spiral shape or an uneven shape.
  • the heat generating layer 300 is less than the first heat transfer coefficient of about 10 to 30 W / (m ⁇ K) of the electrostatic layer 200 in order to spread the heat generated from the heat generating electrode 310 as uniformly as possible in the lateral direction. Has a high second heat transfer coefficient.
  • the rate at which heat generated from the heating electrode 310 is transferred to the substrate 10 via the heating layer 300 and the electrostatic layer 200 is increased. It is not preferable because the process time is slowed down and the process time is long, and when it exceeds about 250 W / (m ⁇ K), the heat generated from the heat generating electrode 310 passes through the heat generating layer 300 and the electrostatic layer 200 and the substrate 10. ) Is very fast, but the difference between the first and second heat transfer coefficients of each of the heating layer 300 and the electrostatic layer 200 is very large, so that the temperature variation of the heating layer 300 and the ceiling layer 200 is very high. It is not preferable because the electrostatic layer 200 accumulates fatigue due to thermal stress or heat shock.
  • the second heat transfer coefficient is about 150 to 250 W / (m ⁇ K) so that the heat from the heat generating electrode 310 is uniformly spread on the substrate 10 in the heat generating layer 300.
  • the heat generating layer 300 is prepared by adding about 90% of aluminum nitride (AlN), which is superior in thermal conductivity to other ceramic materials, to which magnesia (MgO) or yttria (Y 2 O 3 ) are added. can do.
  • AlN aluminum nitride
  • MgO magnesia
  • Y 2 O 3 yttria
  • the heating layer 300 may be manufactured by forming the material in the form of ceramic bulk, ceramic paste, or ceramic thin film, and the like, and may be an adhesive method, a paste printing method, or a deposition method.
  • the heat generating layer 300 manufactured as described above may have a volume resistance of about 10 8 to 10 16 cm 3 , similar to that of the electrostatic layer 200, thereby exhibiting high insulation.
  • the second heat transfer coefficient higher than the first heat transfer coefficient of the heat generating layer 300 having the heat generating electrode 310 disposed below the electrostatic layer 200 having the first heat transfer coefficient is obtained.
  • the heat generated from the heating electrode 310 is preferentially uniformly spread in the heating layer 300 and then provided to the substrate 10 through the electrostatic layer 200 having a relatively low first heat transfer coefficient. By doing so, the substrate 10 can be uniformly heated.
  • the electrostatic layer 200 when the thickness t2 of the electrostatic layer 200 is less than about 1 mm, it is not preferable to uniformly spread the heat spread from the heat generating layer 300. The efficiency delivered to 10 is reduced, which makes it difficult to heat the substrate 10 to a desired temperature, which is undesirable. Therefore, the electrostatic layer 200 preferably has a thickness t2 of about 1 to 5 mm.
  • the heat insulation layer 400 is disposed under the heat generating layer 300.
  • the heat insulation layer 400 blocks the heat generated downward from the heating electrode 310 to guide the heat upward.
  • the heat insulation layer 400 has a third heat transfer coefficient lower than the first heat transfer coefficient of the electrostatic layer 200 as well as the second heat transfer coefficient of the heat generating layer 300.
  • the heat insulating layer 400 may be made of a glass-based ceramic material of a high temperature baking type such as silicon oxide (SiO 2 ), magnesia (MgO), zinc oxide (ZnO), or the like.
  • the heat insulating layer 400 may be made of a polymer material such as silicon, acrylic, epoxy, or the like, or may be made of a material in which two or more are mixed.
  • the third heat transfer coefficient of the heat insulating layer 400 may be about 0.5 to 5 W / (m ⁇ K), and may be about 10 8 to 10 16 ⁇ cm, similar to the electrostatic layer 200 and the heat generating layer 300. It may have a volume resistance.
  • the thickness t3 of the heat insulation layer 400 is less than about 0.05 mm, the temperature of the substrate 10 may not be uniform due to the influence of the cooling fluid flowing in the flow path 510 of the support body 500 disposed below.
  • the thermal efficiency delivered to the substrate 10 is lowered, it is not preferable because a large amount of heat must be generated from the heating electrode 310 unnecessarily.
  • the heat insulation layer 400 has a thickness t3 of about 0.05 to 0.5 mm that can effectively block heat transferred from the heating electrode 310 to the support body 500 without being thick.
  • the support body 500 is disposed below the heat insulation layer 400.
  • the support body 500 supports the insulating layer 400 through the adhesive layer 600 disposed between the insulating layer 400 and serves as a pedestal as a whole.
  • the support body 500 has a flow path 510 uniformly distributed therein. Thus, the support body 500 may cool the heat partially transferred from the heat insulation layer 400 by flowing a cooling fluid into the flow path 510.
  • FIG. 3 is a configuration diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus 1000 includes a process chamber 700, a gas providing unit 800, and an electrostatic chuck 100.
  • the process chamber 700 provides space for processing the substrate 10 to manufacture integrated circuit devices such as semiconductor devices or display devices. For example, an etching process may be performed on the substrate 10 in the process chamber 700. At this time, the interior of the process chamber 700 may be maintained in a high vacuum state to make the etching process more smoothly.
  • the gas provider 800 is connected to the process chamber 700.
  • the gas provider 800 provides a process gas 20 for processing the substrate 10 from the outside into the process chamber 700.
  • the gas providing unit 800 may be connected to the upper portion of the process chamber 700 for smooth provision.
  • the process gas 20 may be an inert gas for generating plasma required for the etching process, or a source gas for substantial etching. Meanwhile, a high frequency voltage may be applied to the gas providing unit 800 from the outside so that the plasma is generated inside the process chamber 700.
  • the electrostatic chuck 100 is disposed inside the process chamber 700. Specifically, the electrostatic chuck 100 is disposed below the process chamber 700 to fix the substrate 10 while supporting the substrate 10.
  • the electrostatic chuck 100 can uniformly heat the substrate 10 as described with reference to FIGS. 1 and 2, the semiconductor device manufactured by treating the substrate 10 through the process gas 20. Alternatively, the quality of integrated circuit devices such as display devices can be improved.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention a pour objet un support électrostatique comprenant une couche électrostatique et une couche émettant de la chaleur. Dans la couche électrostatique est disposée une électrode électrostatique qui produit une force électrostatique pour la fixation d'un substrat placé sur celle-ci, tout en ayant également un premier coefficient de transfert thermique. La couche émettant de la chaleur est disposée au-dessous de la couche électrostatique et dans celle-ci est disposée une électrode émettant de la chaleur pour le chauffage du substrat, tout en ayant également un second coefficient de transfert thermique supérieur au premier coefficient de transfert thermique.
PCT/KR2011/003625 2010-05-31 2011-05-17 Support électrostatique et dispositif de traitement de substrat le comprenant WO2011152620A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012539829A JP5276751B2 (ja) 2010-05-31 2011-05-17 静電チャック及びそれを含む基板処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0050780 2010-05-31
KR1020100050780A KR101636764B1 (ko) 2010-05-31 2010-05-31 정전척 및 이를 포함하는 기판 처리 장치

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WO2011152620A2 true WO2011152620A2 (fr) 2011-12-08
WO2011152620A3 WO2011152620A3 (fr) 2012-04-19

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KR (1) KR101636764B1 (fr)
TW (1) TWI437617B (fr)
WO (1) WO2011152620A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120835A (ja) * 2011-12-07 2013-06-17 Shinko Electric Ind Co Ltd 基板温調固定装置及びその製造方法

Families Citing this family (7)

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KR101976538B1 (ko) * 2012-02-16 2019-05-10 주식회사 미코 온도 가변형 정전척 및 이를 포함하는 기판 처리 장치
JP6392612B2 (ja) * 2014-09-30 2018-09-19 日本特殊陶業株式会社 静電チャック
JP6342769B2 (ja) * 2014-09-30 2018-06-13 日本特殊陶業株式会社 静電チャック
CN110911332B (zh) * 2018-09-14 2022-11-25 北京北方华创微电子装备有限公司 静电卡盘
JP7108586B2 (ja) * 2019-08-16 2022-07-28 日本特殊陶業株式会社 保持装置
JP7184726B2 (ja) * 2019-10-02 2022-12-06 日本特殊陶業株式会社 静電チャックの製造方法、および、複合部材の製造方法
CN112863983B (zh) * 2019-11-28 2023-09-29 中微半导体设备(上海)股份有限公司 用于等离子体处理设备的下电极组件和等离子体处理设备

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JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
KR20060044706A (ko) * 2004-03-24 2006-05-16 쿄세라 코포레이션 웨이퍼 등 지지부재
KR20060052119A (ko) * 2004-10-07 2006-05-19 어플라이드 머티어리얼스, 인코포레이티드 기판의 온도를 제어하기 위한 방법 및 장치
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JP2013120835A (ja) * 2011-12-07 2013-06-17 Shinko Electric Ind Co Ltd 基板温調固定装置及びその製造方法

Also Published As

Publication number Publication date
JP5276751B2 (ja) 2013-08-28
KR20110131376A (ko) 2011-12-07
JP2013511162A (ja) 2013-03-28
TWI437617B (zh) 2014-05-11
TW201218243A (en) 2012-05-01
WO2011152620A3 (fr) 2012-04-19
KR101636764B1 (ko) 2016-07-06

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