WO2011148437A1 - Élément d'imagerie à semi-conducteurs - Google Patents

Élément d'imagerie à semi-conducteurs Download PDF

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Publication number
WO2011148437A1
WO2011148437A1 PCT/JP2010/006412 JP2010006412W WO2011148437A1 WO 2011148437 A1 WO2011148437 A1 WO 2011148437A1 JP 2010006412 W JP2010006412 W JP 2010006412W WO 2011148437 A1 WO2011148437 A1 WO 2011148437A1
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photoelectric conversion
film
solid
state imaging
imaging device
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PCT/JP2010/006412
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English (en)
Japanese (ja)
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土井　博之
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パナソニック株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Definitions

  • the present invention is a solid-state imaging device having a plurality of photoelectric conversion units arranged on a substrate, wherein the photoelectric conversion unit includes a lower electrode, a photoelectric conversion film formed on the lower electrode, and the photoelectric conversion film
  • the present invention relates to an element including an upper electrode formed thereon.
  • a photodiode that is a photoelectric conversion element that has a large number of two-dimensionally arranged pixel portions (hereinafter also simply referred to as “pixels”) and is formed on the semiconductor substrate for each pixel portion and pixel signal readout.
  • pixels two-dimensionally arranged pixel portions
  • CCD-type solid-state image pickup devices and CMOS-type solid-state image pickup devices in which red (R), green (G), and blue (B) color filters are formed on each photodiode.
  • Patent Document 1 As a solid-state imaging device that eliminates this defect, for example, a device in which three photoelectric conversion films for detecting red (R), green (G), and blue (B) light are stacked on a semiconductor substrate (Patent Document 1) has been studied. However, since the three photoelectric conversion films are stacked, there is a problem that the thickness increases and the manufacturing process becomes complicated.
  • FIG. 8 is a schematic cross-sectional view for explaining a conventional solid-state imaging device.
  • the solid-state imaging device 901 of the prior art includes, for example, a semiconductor substrate 907 in which a p-well layer 905 is formed on an n-type silicon substrate 903, and a plurality of photoelectric elements formed above the semiconductor substrate 907 via an insulating film 909.
  • a conversion unit 911, a color filter 913 disposed on each photoelectric conversion unit 911, and a microlens 915 formed on the color filter 913 are provided.
  • the photoelectric conversion unit 911 is pixel by pixel from the semiconductor substrate 907 side.
  • the formed lower electrode 917, photoelectric conversion film 919, upper electrode 921, and protective film 923 are sequentially stacked.
  • the charge converted by the photoelectric conversion film 919 is accumulated in the charge accumulation portion 927 of the semiconductor substrate 907 via the contact plug 925 by a bias voltage applied between the upper electrode 921 and the lower electrode 917, and then the signal Reading is performed from the reading unit 929 to the outside.
  • the upper electrode 921 needs to make light incident on the photoelectric conversion film 919, it is made of a conductive material transparent to the incident light. Accordingly, the upper electrode 921 can be formed over the photoelectric conversion film 919, and even when the number of pixels is increased without increasing the area of the semiconductor substrate 907, the aperture ratio of the light receiving region can be prevented from being reduced. Sensitivity can be imaged.
  • the photoelectric conversion film 919 has a single layer structure, the thickness of the entire element can be reduced, and the photoelectric conversion film 919 can be easily manufactured using a semiconductor process.
  • the conventional solid-state imaging device 901 has the following problems.
  • the upper electrode 921 constituting the photoelectric conversion portion 911 is made of a transparent conductive material because it is necessary to make light incident on the photoelectric conversion film 919, and the material has a high transmittance with respect to visible light and has a resistance. A characteristic with a small value is required.
  • the upper electrode 921 needs to have a film thickness that can secure a low resistance value that does not cause a decrease in bias voltage in a range that does not adversely affect imaging characteristics when the charge generated in the photoelectric conversion film 919 is moved. Become.
  • the resistance value of the upper electrode 921 increases, which makes it difficult to apply a uniform bias voltage to the entire imaging region. That is, when strong light is incident (at high illuminance), a large amount of charge flow (current) is generated, and the bias due to the resistance value of the upper electrode 921 is taken out when the charge generated from the photoelectric conversion film 919 is taken out. A drop occurs, and a slope of the signal output (sensitivity) depending on the position in the imaging region (so-called sensitivity shading phenomenon) occurs.
  • the transmission characteristic of incident light is decreased as the thickness of the upper electrode 921 is increased, and the photoelectric conversion film 919 is obtained.
  • the light incident on the imaging region of the solid-state imaging device 901 leaks from the adjacent pixel portion, and the amount of light incident on the pixel decreases. This causes a so-called color mixture phenomenon between pixels that enters the photoelectric conversion unit 911 of the pixel unit.
  • the signal output of the charge generated by the incident light leaking from the adjacent pixel portion is a noise component for the signal output by the charge originally generated from the light incident on the pixel portion.
  • a solid-state imaging device including a color filter 913 for example, green light or blue light transmitted through the color filter 913 provided in an adjacent pixel portion leaks into the photoelectric conversion film of the red pixel portion. Causes significant degradation.
  • an object of the present invention is to provide a solid-state imaging device capable of suppressing deterioration of pixel characteristics. Note that the above-described problem occurs not only in a color solid-state imaging device including a color filter but also in a so-called monochrome solid-state imaging device that does not include a color filter.
  • the solid-state imaging device of the present invention has the following configuration. (1) In a solid-state imaging device having a plurality of photoelectric conversion units arranged two-dimensionally on a substrate, the photoelectric conversion unit includes a lower electrode formed on the substrate and a photoelectric formed on an upper surface of the lower electrode. A conversion film; and an upper electrode formed on an upper surface of the photoelectric conversion film, wherein the upper electrode is composed of one or a plurality of common electrode films corresponding to all pixels, and the main surface of the common electrode film The conductive film is formed in a state where the electrode film is in contact with a boundary portion between a predetermined region constituted by one or a plurality of photoelectric conversion units and another photoelectric conversion unit adjacent to the predetermined region.
  • the conductive film is an upper electrode composed of one electrode film, and is formed along a boundary portion of each photoelectric conversion unit with another adjacent photoelectric conversion unit. .
  • a color filter is provided above each of the plurality of photoelectric conversion units, and the conductive film is formed at a boundary portion between adjacent color filters in a state of being in contact with the upper surface of the upper electrode. It is said.
  • the conductive film has a lattice shape having a quadrangular opening on the lower electrode.
  • the conductive film has a honeycomb shape having a polygonal opening on the lower electrode.
  • the conductive film has a light shielding property against incident light.
  • the conductive film is formed of any one of tungsten, aluminum, titanium, titanium nitride, and copper, or a laminated film of two or more of them.
  • the conductive film is formed in contact with one electrode film, the conductive film is connected to the wiring of one electrode. Therefore, even when the thickness of one electrode is reduced, an increase in the resistance value of the electrode can be suppressed.
  • the imaging region a region in which a large number of pixels capable of obtaining an electrical signal with respect to incident light are two-dimensionally arranged.
  • the flow of electric charge (current) generated in large quantities increases, and when the electric charge generated from the photoelectric conversion film is taken out, the bias drop due to the resistance value of one electrode is reduced. Since it does not occur, it is possible to suppress the occurrence of a signal output (sensitivity) gradient (so-called sensitivity shading phenomenon) depending on the position in the imaging region. For this reason, even at high illuminance, it is possible to realize imaging with uniform image quality without depending on the position of the imaging region.
  • sensitivity signal output
  • the thickness of one electrode can be reduced by providing the conductive film, the transmittance of incident light to the electrode is not reduced, and the amount of light incident on the photoelectric conversion film is not reduced. Therefore, it is possible to realize a solid-state imaging device having high sensitivity.
  • the thickness of one of the electrodes can be reduced, light incident from an oblique direction with respect to the vertical direction of the imaging surface of the solid-state imaging device is transmitted through the electrode on the adjacent pixel and the photoelectric conversion film of the pixel. It is also possible to suppress the phenomenon of leaking into the image, so-called color mixing phenomenon between pixels.
  • FIG. 2 is a schematic view of a cross section taken along line XX of FIG. It is a cross-sectional schematic diagram for demonstrating the solid-state image sensor which concerns on 2nd Embodiment.
  • 6 is a partial surface schematic diagram for explaining a solid-state imaging device according to Modification 1.
  • FIG. 10 is a partial surface schematic diagram for explaining a solid-state imaging device according to Modification 2.
  • FIG. 10 is a partial surface schematic diagram for explaining a solid-state imaging device according to Modification 3.
  • FIG. 10 is a schematic cross-sectional view for explaining a solid-state imaging device according to Modification 4.
  • FIG. It is a cross-sectional schematic diagram for demonstrating the solid-state image sensor of a prior art.
  • FIG. 1 is a schematic cross-sectional view for explaining a solid-state imaging device 1 according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along the line XX of FIG.
  • the solid-state imaging device 1 has a plurality of pixel units 3, and the plurality of pixel units 3 are two-dimensionally arranged in a matrix (matrix), for example.
  • matrix matrix
  • FIG. 2 what appears in FIG. 2 are color filters 11r, 11g, and 11b, which will be described later, constituting each pixel unit 3.
  • the light color of each color filter is illustrated in each color filter so that the arrangement thereof can be understood. Therefore, the hatching of the color filters 11r, 11g, and 11b is omitted.
  • the solid-state imaging device 1 here is a so-called color solid-state imaging device.
  • the color filter 11r mainly transmits light in the red (R) wavelength region
  • the color filter 11g mainly transmits light in the green (G) wavelength region
  • the color filter 11b mainly transmits the blue (B) wavelength. Transmits light in the area.
  • a portion that overlaps the color filter 11r is a red pixel portion 3r
  • a portion that overlaps the color filter 11g is a green pixel portion 3g
  • a portion that overlaps the color filter 11b is a blue pixel portion 3b.
  • each pixel unit 3r, 3g, 3b is formed on a semiconductor substrate 5 through an insulating film 7 on the semiconductor substrate 5 and photoelectric conversion corresponding to each pixel unit 3r, 3g, 3b.
  • the solid-state imaging device 1 can extract the electric charge corresponding to the light condensed by the microlens 13 and transmitted through each color filter 11 in each pixel unit 3.
  • the semiconductor substrate 5 includes, for example, an n-type silicon substrate 15 and a p-well layer 17 formed on the silicon substrate 15.
  • a p-type silicon substrate may be used as the semiconductor substrate 5.
  • the semiconductor substrate 5 corresponds to each photoelectric conversion unit 9, and a charge storage unit 19 for storing the charge photoelectrically converted by the photoelectric conversion unit 9, and converts the charge stored in the charge storage unit 19 into a voltage signal.
  • the signal reading unit 21 is formed.
  • the charge storage unit 19 is composed of an n-type impurity region (specifically, the source of a transistor), and is electrically connected to the photoelectric conversion unit 9 by a contact plug 23 made of a conductive material that penetrates the insulating film 7. Connected.
  • the signal readout unit 21 is configured by a known CMOS circuit or a circuit combining a CCD and an amplifier.
  • the symbol “19” is added with “r”, “g”, and “b” of each color, and similarly, when representing the signal readout unit.
  • the code “21” is added with “r”, “g”, and “b” of each color.
  • the semiconductor substrate 5 is used as the substrate, but any substrate that can install an electronic circuit inside and on the substrate, such as a glass substrate or a quartz substrate, may be used.
  • the contact plug 23 may be made of any metal, but is preferably selected from copper, aluminum, silver, gold, chromium, and tungsten.
  • the lower electrode 25 and the charge storage unit 19 are formed according to the plurality of photoelectric conversion units 9, and the contact plug 23 is formed so as to connect the lower electrode 25 and the charge storage unit 19 on a one-to-one basis. ing.
  • (2) Insulating film 7 The insulating film 7 includes the contact plug 23 described above, a light shielding film for preventing incident light from being incident on the charge storage unit 19 and the signal readout unit 21, wiring for driving the signal readout unit 21, etc. (Omitted) is buried. In this way, by forming the light shielding film on the insulating film 7, it is possible to prevent light transmitted without being subjected to photoelectric conversion by the photoelectric conversion unit 9 from being photoelectrically converted by the charge storage unit 19 and the signal reading unit 21 to be noise. it can.
  • the lower electrode 25 is made of a light-shielding metal
  • light may enter from the gap between the lower electrodes 25, so that the light is shielded below the gap between the lower electrodes 25 in the insulating film 7. It is preferable to form a film. If a light-shielding metal wiring is disposed below the gap between the lower electrodes 25, the wiring can also serve as a light-shielding film.
  • Photoelectric conversion unit 9 The photoelectric conversion units 9r, 9g, and 9b correspond to the pixel units 3r, 3g, and 3b, and the lower electrodes 25r, 25g, and 25b formed in a state of being divided into the pixel units 3r, 3g, and 3b,
  • the photoelectric conversion film 27 formed on the upper surface of the lower electrodes 25r, 25g, and 25b, the upper electrode 29 formed on the upper surface of the photoelectric conversion film 27, and the adjacent photoelectric conversion on the upper surface of the upper electrode 29
  • the conductive film 33 formed between the portions 9r, 9g, and 9b, and the protective film 31 formed on the conductive film 33 and the upper electrode 29 on the portion where the conductive film 33 does not exist.
  • Each photoelectric conversion unit 9 transfers electric charges (holes and electrons) generated in a portion sandwiched between the lower electrode 25 and the upper electrode 29 in the photoelectric conversion film 27 between the upper electrode 29 and the lower electrode 25. By applying a predetermined bias voltage, the upper electrode 29 and the lower electrode 25 can be moved.
  • a wiring (not shown) is connected to the upper electrode 29, a negative bias voltage is applied to the upper electrode 29 via this wiring, and electrons generated in the photoelectric conversion film 27 are positively applied to the lower electrode 25.
  • the holes move to the upper electrode 29, respectively.
  • the lower electrodes 25r, 25g, and 25b are also denoted by reference numeral “25” when expressed regardless of the colors.
  • Each lower electrode 25 is divided by each pixel unit 3 in order to take out the electric charges converted corresponding to the incident light of each pixel unit 3, and each color filter 11 of each pixel unit 3 in plan view. It has almost the same shape and size.
  • the photoelectric conversion film 27 absorbs light in a specific wavelength region and generates a charge corresponding to the light.
  • the photoelectric conversion film 27 is formed of a common material, not a unit of each pixel unit 3, but a single sheet as a whole.
  • the upper electrode 29 Since the upper electrode 29 needs to make light incident on the photoelectric conversion film 27, the upper electrode 29 is made of a conductive material that is transparent to the incident light. Similarly to the photoelectric conversion film 27, each pixel unit 3 unit is made of a common material. Instead, it is composed of a single electrode film as a whole.
  • the protective film 31 is provided to prevent deterioration of the photoelectric conversion film 27 with time due to moisture, oxygen, or the like. Specifically, even after the formation of the color filters 11r, 11g, and 11b, there is a possibility that moisture and oxygen may enter the photoelectric conversion film 27 over time, and the performance of the photoelectric conversion film 27 is thereby deteriorated. It is.
  • Such a protective film 31 is a material having both a protective function of the upper electrode 29 and the photoelectric conversion film 27 (denseness in which moisture and oxygen do not easily enter, non-reactivity that does not easily react with moisture and oxygen) and transparency ( Thin film).
  • the conductive film 33 is disposed in contact with the upper surface of the upper electrode 29, has a shape corresponding to the photoelectric conversion unit 9, and is adjacent to the photoelectric conversion units 9r, 9g, and 9b. (For example, the boundary portion between the photoelectric conversion unit 9r and the photoelectric conversion unit 9g). That is, it is formed across the boundary portions of the adjacent color filters 11r, 11g, and 11b.
  • the conductive film 33 has a lattice shape corresponding to the color filters 11 (photoelectric conversion units 9) arranged in a matrix. As described above, the conductive film 33 is provided in contact with the upper surface of the upper electrode 29 so as to have an opening in a portion corresponding to the light receiving region of each photoelectric conversion unit 9.
  • the conductive film 33 is a hatched portion, and the protective film 31 is a line segment surrounding the conductive film 33.
  • Color filter 11 Each color filter 11r, 11g, 11b is formed on the upper surface of the protective film 31 of each photoelectric conversion unit 9r, 9g, 9b corresponding to each pixel unit 3r, 3g, 3b.
  • a color filter array for example, Bayer array
  • a color filter array used in a known single-plate solid-state imaging device.
  • Bayer arrangement for example, vertical stripes, horizontal stripes, and the like can be employed.
  • Micro lens 13 The microlens 13 is formed, for example, in a dome shape on the upper surface of each color filter 11, and condenses the light incident on the microlens 13 onto the photoelectric conversion film 27 of the photoelectric conversion unit 9 in each pixel unit 3.
  • Embodiment (1) Lower electrode 25 The lower electrode 25 is a thin film divided for each pixel unit 3 and is made of an opaque conductive material.
  • the photoelectric conversion film 27 includes a photoelectric conversion material that absorbs light in a specific wavelength region and generates a charge corresponding to the light.
  • a photoelectric conversion material an organic photoelectric conversion material is preferably used from the viewpoint of spectral characteristics and sensitivity characteristics.
  • quinacridone or the like can be used, and the film thickness is 400 [nm] to 600 [600]. nm] is preferable, and is about 500 [nm] in this embodiment.
  • the photoelectric conversion film 27 is made of a material having a light absorption spectrum with a high light absorptance over the entire visible range because the color filters 11 r, 11 g, and 11 b perform spectroscopy at each pixel unit 3. It is desirable to use a material with high quantum efficiency in order to maintain high sensitivity.
  • the photoelectric conversion film 27 is better as the light absorption rate is higher. However, if the film thickness is increased in order to increase the light absorption rate, the quantum efficiency is lowered. It is preferable that the light can be sufficiently absorbed with a thinner film thickness.
  • the photoelectric conversion film 27 can obtain an image quality that does not cause a problem in photographing by using a material having a light absorption rate of 50 [%] or more at a wavelength of 400 [nm] to 700 [nm]. It becomes.
  • the material of the photoelectric conversion film 27 is preferably a material that mainly photoelectrically converts light in the visible light region, and has a photoelectric conversion capability smaller than visible light for ultraviolet light or infrared light, or Those having no photoelectric conversion ability are preferred. In this way, noise due to ultraviolet light or infrared light can be reduced or eliminated.
  • an ultraviolet cut filter or an infrared cut filter (not shown) is provided outside the solid-state image sensor 1 of the present invention, it is possible to prevent ultraviolet light and infrared light from entering the solid-state image sensor 1 and The material of the conversion film 27 can be selected considering only the sensitivity to visible light.
  • the upper electrode 29 Since the upper electrode 29 needs to make light incident on the photoelectric conversion film 27, the upper electrode 29 is made of a conductive material that is transparent to the incident light. As such a conductive material, a transparent conductive oxide (TCO) having a high transmittance for visible light and a small resistance value can be used.
  • TCO transparent conductive oxide
  • ITO indium tin oxide
  • FTO fluorine-doped tin oxide
  • ZO zinc oxide
  • titanium oxide titanium oxide
  • ITO is preferable from the viewpoint of process simplicity, low resistance, and transparency.
  • the material of the transparent electrode is preferably one that can be formed by a plasma-free film forming apparatus, an EB vapor deposition apparatus, and a pulse laser vapor deposition apparatus, and ITO, IZO, tin oxide, antimony dope are particularly preferable.
  • the material is any one of tin oxide (ATO), FTO, zinc oxide, AZO, gallium-doped zinc oxide (GZO), and titanium oxide.
  • the light transmittance of the upper electrode 29 is preferably 60 [%] or more, more preferably 80 [%] in the absorption peak wavelength of the photoelectric conversion light of the photoelectric conversion film 27 included in the photoelectric conversion unit 9 in which the upper electrode 29 exists. That's it. This is because the visible light is sufficiently incident on each photoelectric conversion film 27.
  • the preferred range of the surface resistance of the upper electrode 29 differs depending on whether the charge storage / transfer / readout structure is a CCD structure or a CMOS structure.
  • the charge accumulation / transfer / readout structure is a CMOS structure
  • it is preferably 10,000 [ ⁇ / ⁇ ] or less, more preferably 1000 [ ⁇ / ⁇ ] or less.
  • the charge storage / transfer / readout structure is a CCD structure
  • it is preferably 1000 [ ⁇ / ⁇ ] or less, more preferably 100 [ ⁇ / ⁇ ] or less.
  • the reason why the CCD structure is smaller than the CMOS structure is that the current that flows when the CCD structure is driven is about one digit higher.
  • the photoelectric conversion film 27 it is preferable to apply a voltage to the photoelectric conversion film 27 because applying a voltage to the photoelectric conversion film 27 improves the photoelectric conversion efficiency.
  • the applied voltage may be any voltage, but the required voltage varies depending on the film thickness of the photoelectric conversion film 27, and may be determined according to the film thickness.
  • the photoelectric conversion efficiency of the photoelectric conversion film 27 improves as the electric field applied to the photoelectric conversion film 27 increases, but the applied electric field increases as the film thickness of the photoelectric conversion film 27 decreases even at the same applied voltage. Therefore, when the photoelectric conversion film 27 is thin, the applied voltage may be relatively small.
  • the electric field applied to the photoelectric conversion film 27 is preferably 10 [V ⁇ m ⁇ 1 ] or more, and more preferably 1 ⁇ 10 3 [V ⁇ m ⁇ 1 ] or more.
  • the upper limit is not particularly since undesirable since the current even in a dark place when the electric field too added may flow, 1 ⁇ preferably 10 12 [V ⁇ m -1] or less, further 1 ⁇ 10 9 [V ⁇ m -1 The following is preferable.
  • the function of the upper electrode 29 is to generate an electric field, and an opening may be formed in each pixel portion as long as an area sufficient to generate an electric field is secured. By doing so, no light attenuation occurs at the opening, so that the light incident on the photoelectric conversion unit 9 can be further increased and the sensitivity can be improved.
  • the conductive film 33 is disposed at the boundary between adjacent photoelectric conversion units 9r, 9g, and 9b, and depends on the unit pixel size, but in order to obtain a desired opening for light reception and a resistance value, the width (see FIG. 2 is preferably about 0.1 [ ⁇ m] to 0.6 [ ⁇ m].
  • the conductive film 33 desirably has a light blocking property with respect to incident light, and is made of tungsten, aluminum, titanium, titanium nitride, copper, or a laminated film of two or more of them.
  • Protective film 31 The protective film 31 is formed on the upper surface of the upper electrode 29 in order to protect the upper electrode 29 and the like. For this reason, light transmittance is required. Regarding light transmittance, if the light transmittance at a wavelength of 400 [nm] to 700 [nm] is 80 [%] or more, visible light can be sufficiently incident on each photoelectric conversion film 27.
  • the thin film having both the protective function and transparency needs to be a highly transparent film and made of a material that can protect the upper electrode 29 and the photoelectric conversion film 27.
  • An example of such a film is a thin film of nitride such as silicon nitride.
  • a nitride film By forming a nitride film by physical vapor deposition, a dense nitride film can be formed without substantially changing the characteristics of the upper electrode 29 and the photoelectric conversion film 27.
  • the film thickness of the protective film 31 is preferably 0.1 [ ⁇ m] to 10 [ ⁇ m], and more preferably 0.5 [ ⁇ m] to 5 [ ⁇ m]. Furthermore, 1 [ ⁇ m] to 3 [ ⁇ m] is preferable.
  • the green light of the incident light is absorbed by the photoelectric conversion film 27 of the green pixel portion 3g and converted into a charge, and this charge is accumulated in the charge accumulation portion 19g after moving to the lower electrode 25g by application of a bias voltage.
  • the signal reading unit 21g outputs a green signal.
  • blue light of the incident light is absorbed by the photoelectric conversion film 27 of the blue pixel portion 3b and converted into electric charge, and this electric charge moves to the lower electrode 25b by application of a bias voltage and is then accumulated in the electric charge accumulating portion 19b.
  • the signal readout unit 21b outputs a blue signal.
  • the solid-state imaging device 1 includes a conductive film 33 having an opening in a portion corresponding to the light receiving region of each photoelectric conversion unit 9 on the upper surface of the upper electrode 29 in contact with the electrode 29. . Accordingly, since the conductive film 33 serves as a backing wiring for the upper electrode 29 that is a transparent electrode, the thickness of the upper electrode 29 is reduced from about 200 [nm] to about 100 [nm], which is half of the conventional thickness.
  • the conductive film 33 is disposed in contact with the upper surface of the upper electrode 29 and is formed at the boundary between adjacent photoelectric conversion units. As a result, the film thickness of the upper electrode 29 can be reduced to about half that of the prior art, so that the transmittance of incident light to the upper electrode 29 is not lowered. For this reason, the solid-state imaging device 1 having high sensitivity can be realized.
  • the solid-state imaging device 1 includes the conductive film 33, so that the film thickness of the upper electrode 29 can be reduced to about half of the conventional thickness.
  • the solid-state imaging device 1 According to the solid-state imaging device 1 according to the first embodiment, it is possible to solve the problems of shading at high illuminance, a decrease in sensitivity, and a problem of color mixing between pixels. It is possible to realize the solid-state imaging device 1 that can capture a high-quality image with significantly improved imaging performance. 5.
  • the conventional solid-state imaging device does not include the conductive film 33, and when the upper electrode is formed of a metal film or the like, for example, to reduce the resistance of the upper electrode to 100 [ ⁇ / ⁇ ] or less, 200 [nm] ] The above film thickness is required.
  • the conductive film 33 when the conductive film 33 is applied as the backing wiring of the upper electrode (29) and the metal film forming the conductive film 33 is formed of tungsten or titanium nitride, the conductive film 33 is electrically conductive.
  • the resistance value of the film 33 becomes 1/10 of that of the ITO constituting the upper electrode (29).
  • FIG. 3 is a schematic cross-sectional view for explaining the solid-state imaging device 101 according to the second embodiment.
  • FIG. 3 represents each cross section of a red pixel part, a green pixel part, and a blue pixel part virtually arranged.
  • the solid-state imaging device 101 includes a plurality of pixel units 103, and the plurality of pixel units 103 are two-dimensionally arranged as in the first embodiment.
  • Each pixel portion 103 includes three types of a red pixel portion 103r, a green pixel portion 103g, and a blue pixel portion 103b.
  • each of the pixel portions 103r, 103g, and 103b includes a semiconductor substrate 5 and photoelectric elements corresponding to the pixel portions 103r, 103g, and 103b formed above the semiconductor substrate 5 with an insulating film 7 interposed therebetween.
  • the symbol “103” is used to represent the pixel portion
  • the symbol “105” is used to represent the photoelectric conversion unit
  • the symbol “107” is used to represent the color filter.
  • the photoelectric conversion unit 105 includes a lower electrode 25, a photoelectric conversion film 27, an upper electrode 29, a conductive film 109, and a protective film 111.
  • the conductive film 109 has a film thickness equivalent to or smaller than that of the color filter 107 (about 0.2 [ ⁇ m] to 0.5 [ ⁇ m]), and the first embodiment. It is thicker than the film thickness of the conductive film 33 according to the embodiment.
  • the conductive film 109 is formed on the side surface of the color filter 107 (located on the side surface), and is disposed at a position where the adjacent color filters 107r, 107g, and 107b are separated (that is, between adjacent color filters). As shown, the upper part of the lower electrode 25 of the photoelectric conversion unit 105 has a lattice shape opened.
  • the color filter 107 is formed in the opening of the lattice-shaped conductive film 109.
  • the upper surface of the color filter 107 substantially coincides with the upper surface of the protective film 111 that covers and protects the conductive film 109, and the microlens 13 is formed on the upper surface of the color filter 107 and the protective film 111.
  • the conductive film 109 is made of tungsten, aluminum, titanium, titanium nitride, or copper, or a laminated film of two or more of them.
  • the conductive film 109 is made of a laminated film of tungsten and titanium nitride. Yes.
  • the width of the conductive film 109 depends on the unit pixel size, but is preferably about 0.1 [ ⁇ m] to 0.6 [ ⁇ m] in order to obtain a desired opening and resistance value. If the pixel size is about 1.5 [ ⁇ m], the width of the conductive film 109 is preferably about 0.2 [ ⁇ m].
  • the conductive film 109 preferably has a light blocking property with respect to incident light, and its film thickness is about 0.2 [ ⁇ m] to 0.5 [ ⁇ m], for example, 0.4 [ ⁇ m]. . 3. Effect (1) Resistance and transmittance of upper electrode When only the upper electrode 29 is formed without providing the conductive film 109, a film thickness of 200 [nm] is required to realize a resistance of 100 [ ⁇ / ⁇ ] or less. The above upper electrode is required (a conventional solid-state imaging device).
  • the unit pixel size is, for example, when the film thickness of the conductive film 109 is 0.4 [ ⁇ m], the upper electrode 29 can be formed with a film thickness of about 25 [nm]. .
  • the conductive film 109 serves as a backing wiring for the upper electrode 29 that is a transparent electrode, the thickness of the upper electrode 29 is reduced from about 200 [nm] to 25 [nm].
  • an increase in the resistance value of the upper electrode 29 can be suppressed, and a uniform bias can be applied over the entire imaging region.
  • the conductive film 109 is disposed in contact with the upper surface of the upper electrode 29, and is formed at the boundary between adjacent photoelectric conversion portions 105r, 105g, and 105b.
  • the color filters 107r, 107g, and 107b that are adjacent to each other are arranged at positions that separate them.
  • a light shielding body (light shielding film) is formed on the side surface of the color filter 107.
  • the conductive film 109 having an opening corresponding to the light receiving region of each photoelectric conversion unit 105 is formed on the upper surface of the upper electrode 29. Since the electrode 29 is in contact with the electrode 29, shading at high illuminance can be suppressed as in the first embodiment.
  • the thickness of the conductive film 109 is larger than that of the conductive film 33 in the first embodiment, as described above, the sensitivity can be significantly improved and color mixing between pixels can be eliminated. Therefore, it is possible to realize a solid-state imaging device that can capture a high-quality image with significantly improved imaging performance.
  • the microlens 13 is provided on the upper surface of each color filter 107. Therefore, as in the first embodiment, the condensing of incident light using the microlens 13 is efficiently performed by providing the conductive film 109 at the boundary portion between the adjacent photoelectric conversion units 105r, 105g, and 105b. Can contribute to the improvement of sensitivity.
  • the conductive films 33 and 109 in the first and second embodiments have a planar (two-dimensional) structure and are arranged so that the overall shape is a square lattice shape. It is established (formed). However, the conductive film does not need to have a planar structure as in the first and second embodiments, and may have another structure. Hereinafter, another structure of the conductive film will be described as a first modification.
  • FIG. 4 is a partial surface schematic diagram for explaining the solid-state imaging device 201 according to the first modification.
  • FIG. 4 is a cross-sectional view of the solid-state imaging device 201 according to the first modification, taken along a virtual line corresponding to the line XX in FIG. 1, as viewed from the direction of the arrow in FIG.
  • the solid-state imaging device 201 has a plurality of pixel portions 203r, 203g, and 203b (shown by broken lines).
  • the conductive film 205 of each pixel portion 203 has a straight (one-dimensional) structure as shown in FIG. That is, the conductive film 205 may be formed in a line shape extending in the column direction and may be provided in a plurality in the row direction. Also in the first modification, the conductive film 205 is covered with the protective film 207, and color filters 209r, 209g, and 209b having a predetermined arrangement are formed on each photoelectric conversion unit.
  • the color filter 209 appearing in FIG. 4 is a cross section and originally needs to be hatched, but is not hatched so that the arrangement of the color filters 209 of each color can be seen.
  • the conductive film 205 is a hatched portion
  • the protective film 207 is a line segment surrounding the conductive film 205. Furthermore, the arrangement of the color filters 209 is repeated in this order in the row direction for red, green, and blue arranged in a straight line in the column direction.
  • the shading is suppressed at high illuminance as compared with the case where the conductive films 33 and 109 are arranged in a square lattice shape (the first and second embodiments).
  • the aperture area can be increased, so that the sensitivity can be improved, which is advantageous when used for applications in which priority is given to sensitivity over shading and color mixing.
  • the conductive films 33 and 109 in the first embodiment and the second embodiment have a square lattice shape in which the light receiving regions of the photoelectric conversion units 9 and 105 are opened in plan view.
  • the shape of the conductive film in plan view need not be a square lattice shape as in the first and second embodiments, and may be another shape.
  • other shapes of the conductive film will be described as modified examples 2 and 3.
  • FIG. 5 is a partial surface schematic diagram for explaining a solid-state imaging device 251 according to Modification Example 2.
  • FIG. 6 is a partial surface schematic diagram for explaining a solid-state imaging device 301 according to Modification Example 3.
  • FIG. 5 and 6 are cross-sectional views of the solid-state imaging devices 251 and 301 taken along a virtual line corresponding to the line XX in FIG. 1 as seen from the arrow direction in FIG.
  • the color filters 257 and 309 appearing in FIG. 5 and FIG. 6 are cross sections and originally need to be hatched, but are not hatched so that the arrangement of the color filters of the respective colors can be understood.
  • the solid-state imaging device 251 includes a plurality of pixel portions 253r, 253g, and 253b (shown by broken lines). As shown in FIG. 5, each pixel unit 253 has a polygonal shape, here, a regular hexagonal shape in plan view.
  • the conductive film 255 of each pixel portion 253 has a polygonal annular shape, here, a regular hexagonal honeycomb shape corresponding to each pixel portion 253 in plan view.
  • the color filters 257r, 257g, and 257b of the pixel portions 253r, 253g, and 253b have a plurality of green color filters 257g arranged in odd rows, and red color filters 257r and blue color filters 257b alternately in even rows.
  • the odd rows and the even rows are arranged so as to be shifted from each other by about 1 ⁇ 2 of the arrangement pitch in the row direction.
  • the conductive film 255 is covered with the protective film 259, and the color filters 257r, 257g, and 257b having the above-described arrangement are formed on each photoelectric conversion unit.
  • the spatial position of the signal output from each pixel unit 253 has a honeycomb arrangement, a signal at an imaginary pixel position where no signal is obtained is used as a signal around the position.
  • the solid-state imaging device 301 includes a plurality of pixel portions 303r, 303g, and 303b (shown by broken lines).
  • the conductive film 305 of each pixel portion 303 has a lattice shape in a plan view, and has a wide shape only at a portion where the vertical and horizontal intersects. That is, the conductive film 305 has a shape having an opening that is a regular octagon in plan view as a light receiving region of the photoelectric conversion unit.
  • the conductive film 305 is covered with the protective film 307, and color filters 309r, 309g, and 309b having a predetermined arrangement are formed on each photoelectric conversion unit.
  • the sensitivity is inferior to that in the case where the conductive films 33 and 109 are arranged in a square lattice shape in plan view, but shading at high illuminance and between pixels are reduced. It is possible to improve color mixing, which is advantageous when used for applications in which shading and color mixing have priority over sensitivity.
  • the conductive film 305 can be used as a light-shielding film for a pixel that outputs a reference signal inside the solid-state image sensor 301 (so-called optical black pixel), thereby simplifying the structure of the solid-state image sensor 301. It becomes possible. (3) Arrangement Position In the first and second embodiments and the first to third modifications, the conductive film is formed in contact with the upper surface of the upper electrode, but the increase in the resistance value of the upper electrode is suppressed. From this point of view, it is not necessary to provide the conductive film in contact with the upper surface of the upper electrode, and it can be formed in another region.
  • FIG. 7 is a schematic cross-sectional view for explaining a solid-state imaging device 351 according to Modification 4.
  • the photoelectric conversion unit 353 of the solid-state imaging device 351 according to Modification 4 includes a lower electrode 25, a photoelectric conversion film 27, an upper electrode 29, conductive films 33 and 355, and a protective film 31.
  • the conductive film 33 is disposed at a boundary portion between adjacent photoelectric conversion portions 353 in contact with the upper surface of the upper electrode 29, and the conductive film 355 is provided in the upper electrode 29 as shown in FIG. It is arranged at the boundary portion between the adjacent photoelectric conversion portions 353 in a state of being in contact with the lower surface of. 2.
  • Photoelectric Conversion Unit (1) Bias Voltage
  • the photoelectric conversion unit included in each pixel unit is sandwiched between the lower electrode and the upper electrode in the photoelectric conversion film by applying a predetermined bias voltage between the upper electrode and the lower electrode.
  • One of the charges (holes and electrons) generated in the portion can be moved to the upper electrode, and the other can be moved to the lower electrode.
  • a configuration in which a negative bias voltage is applied to the upper electrode is used, but conversely, a configuration in which a negative bias voltage is applied to the lower electrode may be used.
  • the contact plug for connecting the upper electrode and the charge storage portion can be provided by penetrating the insulating layer and the photoelectric conversion film. Needless to say, this contact plug needs to be formed so as not to contact the lower electrode, and the formation portion is preferably a boundary portion between adjacent photoelectric conversion portions.
  • the upper electrode is composed of a common electrode film made of a common material for all the pixel portions. A plurality of common electrode films may be used.
  • a plurality of pixel unit regions arranged in the column direction may be set as predetermined regions, or included in a square shape or a rectangular shape such as 2 rows and 2 columns in a plan view.
  • a plurality of image areas may be set as the predetermined area.
  • the conductive film may be formed in the entire range of the boundary portion between the predetermined region and another photoelectric conversion unit adjacent thereto, or may be formed in a part of the boundary portion. From the viewpoint of uniform application of the bias voltage, it is preferable to form it on all the boundary portions.
  • the photoelectric conversion film in the embodiment and the like is composed of one organic photoelectric conversion material, but may be combined with other materials, for example.
  • another material can be formed between the lower electrode and the photoelectric conversion film, between the upper electrode and the photoelectric conversion film, or both.
  • Other materials include, for example, a functional film for improving the function of the photoelectric conversion element (for example, a charge blocking layer for suppressing dark current).
  • the photoelectric conversion film is a material common to all the pixel portions and has a single structure, but for each pixel portion or a plurality of pixel portions arranged in the column direction (FIG. 4). (Refer to reference) or the like.
  • the conductive film is an upper electrode composed of one electrode film, and is formed along a boundary portion of each photoelectric conversion unit with another adjacent photoelectric conversion unit.
  • the thickness of the upper electrode can be reduced by providing the conductive film on the upper electrode. Thereby, the transmittance of incident light with respect to the upper electrode is not decreased, and the amount of light incident on the photoelectric conversion film is not decreased, so that a solid-state imaging device having high sensitivity can be realized. Furthermore, since the thickness of the upper electrode can be reduced, a color mixing phenomenon between pixels can be suppressed.
  • a color filter is provided above each of the plurality of photoelectric conversion units, and the conductive film is formed at a boundary portion between adjacent color filters in a state of being in contact with the upper surface of the upper electrode.
  • a color filter is provided above the plurality of photoelectric conversion units, and deterioration of pixel characteristics (sensitivity shading phenomenon, sensitivity reduction) of a solid-state imaging device having a color filter capable of capturing a color image can be suppressed.
  • a solid-state image sensor can be realized.
  • the conductive film is formed at the boundary portion of the color filter formed in the adjacent photoelectric conversion unit, the light incident from the oblique direction with respect to the vertical direction of the imaging surface of the solid-state imaging device is, for example, adjacent It is possible to suppress the phenomenon of transmitting through the color filter provided in the green pixel portion or the blue pixel portion and leaking into the photoelectric conversion film of the red pixel portion.
  • a conductive film formed at the boundary portion between adjacent photoelectric conversion portions is provided, and a conductive film having an opening in the photoelectric conversion portion is formed as a backing wiring of the upper electrode that is a transparent electrode.
  • the configuration in which the increase in the resistance value of the upper electrode can be suppressed even when the film thickness is small is, for example, when the conductive film has a lattice shape having a rectangular opening on the lower electrode
  • the conductive film adopts a structure having a polygonal opening on the photoelectric conversion portion, a further reduction in resistance can be realized, so that a higher effect can be exhibited.
  • the conductive film has a light shielding property against incident light. As a result, it is possible to block light incident on a boundary portion between adjacent photoelectric conversion units that induces a color mixing phenomenon between the pixel units, thereby realizing a higher color mixing suppression effect.
  • the conductive film is made of any one of tungsten, aluminum, titanium, titanium nitride, and copper, or a laminated film of two or more of them.
  • tungsten, aluminum, titanium, titanium nitride, and copper or a laminated film of two or more of them.
  • (6) As described above, according to the solid-state imaging device described above, it is possible to suppress shading and sensitivity reduction at high illuminance, and to suppress mixing of colors between pixels, and the imaging performance is greatly improved. This has the effect of realizing a solid-state imaging device capable of capturing a high-quality image. The above-described effect is particularly noticeable in a solid-state imaging device having a large imaging area and a fine unit pixel size that can realize an increase in the number of pixels.
  • the photoelectric conversion film laminated solid-state imaging device has greatly improved imaging performance, and sensitivity shading phenomenon, sensitivity reduction, and pixel-to-pixel, which have been problems in the conventional photoelectric conversion film laminated solid-state imaging device. Therefore, the present invention is useful as a solid-state imaging device capable of capturing high-quality images in place of CCD or CMOS image sensors which are currently mainstream.

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Abstract

L'invention concerne un élément d'imagerie à semi-conducteurs (1) comportant de multiples parties de conversion photoélectrique (9) disposées sur un substrat (5), chacune des parties de conversion photoélectrique (9) comportant une électrode inférieure (25) formée sur le substrat (5), un film de conversion photoélectrique (27) formé sur la surface supérieure de l'électrode inférieure (25) et une électrode supérieure (29) formée sur la surface supérieure du film de conversion photoélectrique (27). Un film conducteur (33) est formé au contact de la surface supérieure de l'électrode supérieure (29). Le film conducteur (33) a une forme comportant une ouverture sur chacune des parties de conversion photoélectrique (9) et il est formé à la limite entre deux parties de conversion photoélectrique (9) adjacentes.
PCT/JP2010/006412 2010-05-28 2010-10-29 Élément d'imagerie à semi-conducteurs WO2011148437A1 (fr)

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JP2017034280A (ja) * 2016-10-31 2017-02-09 凸版印刷株式会社 固体撮像素子
CN109075182A (zh) * 2016-08-05 2018-12-21 松下知识产权经营株式会社 摄像装置
CN114520268A (zh) * 2020-11-19 2022-05-20 无锡华润微电子有限公司 光电二极管单元及光电二极管阵列

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US9502453B2 (en) * 2013-03-14 2016-11-22 Visera Technologies Company Limited Solid-state imaging devices
JP6157341B2 (ja) * 2013-12-19 2017-07-05 野洲メディカルイメージングテクノロジー株式会社 アクティブマトリクスアレイ基板、信号処理装置、受光装置及び表示装置
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KR102338334B1 (ko) * 2014-07-17 2021-12-09 삼성전자주식회사 유기 광전 소자, 이미지 센서 및 전자 장치
JP6389685B2 (ja) 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
JP6576025B2 (ja) 2014-09-29 2019-09-18 キヤノン株式会社 光電変換装置、及び撮像システム
JP6570417B2 (ja) * 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP6728820B2 (ja) * 2016-03-18 2020-07-22 凸版印刷株式会社 固体撮像装置及びその製造方法
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CN112331684B (zh) * 2020-11-20 2024-02-09 联合微电子中心有限责任公司 图像传感器及其形成方法

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