WO2011145440A1 - Procédé pour délivrer un liquide de traitement, et support de stockage informatique - Google Patents

Procédé pour délivrer un liquide de traitement, et support de stockage informatique Download PDF

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Publication number
WO2011145440A1
WO2011145440A1 PCT/JP2011/060050 JP2011060050W WO2011145440A1 WO 2011145440 A1 WO2011145440 A1 WO 2011145440A1 JP 2011060050 W JP2011060050 W JP 2011060050W WO 2011145440 A1 WO2011145440 A1 WO 2011145440A1
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WIPO (PCT)
Prior art keywords
template
substrate
wafer
processing liquid
electrode
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PCT/JP2011/060050
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English (en)
Japanese (ja)
Inventor
春生 岩津
重徳 北原
雅敏 白石
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東京エレクトロン株式会社
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Publication of WO2011145440A1 publication Critical patent/WO2011145440A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008—Current shielding devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Definitions

  • the present invention relates to a method for supplying a processing liquid to a predetermined position of a substrate and a computer storage medium.
  • a three-dimensional integration technique for stacking devices in three dimensions has been proposed.
  • a TSV Through Silicon Via
  • wafer a thin semiconductor wafer W (hereinafter referred to as “wafer”) having a circuit 300 formed on the surface thereof are used.
  • a so-called fine through-hole H having a diameter of, for example, 100 ⁇ m or less is provided.
  • the connection electrode 301 is formed in the said through-hole H, and as shown in FIG.14 (b), the wafer W laminated
  • the through-hole H requires high positional accuracy
  • a mask is formed by a photolithography technique, and the wafer W on which the mask is formed is so-called dry etching such as plasma etching.
  • the through hole H is formed by etching using an etching technique.
  • dry etching the cost required for a photolithography process for forming a mask for etching and the cost required for dry etching using a vacuum apparatus are high, which corresponds to the recent reduction in the cost of semiconductor devices. It was difficult.
  • the present invention has been made in view of such a point, and an object thereof is to supply a processing liquid to a predetermined position of a substrate with high positional accuracy.
  • the present invention is a method of supplying a processing liquid to a predetermined position of a substrate, wherein a plurality of openings are formed on the surface at locations corresponding to the predetermined position, and the surface is formed.
  • a template having a flow path communicating from the opening to the back surface is placed on a rotation holding unit that rotates while holding the back surface of the template, and the processing liquid is supplied to the front surface of the template and rotated and held.
  • the template is rotated to fill the flow path with the treatment liquid, the substrate is brought into close contact with the surface of the template filled with the treatment liquid, and the template and the substrate are kept in close contact with each other. And the substrate are turned upside down to supply the processing liquid to a predetermined position of the substrate.
  • the substrate is brought into close contact with the template in a state in which the flow path of the template in which the predetermined opening is formed is filled with the processing liquid, and the template and the substrate are moved up and down with the template and the substrate being brought into close contact with each other. Since it is reversed, the processing liquid filled in the flow path of the template can be supplied to a position corresponding to the opening of the template on the substrate. For this reason, when supplying a processing solution using a microprobe as in the prior art, it was difficult to align the probe with high positional accuracy, and thus it was not possible to supply the processing solution with high positional accuracy.
  • the opening of the template can be formed with high positional accuracy by using, for example, machining or photolithography technology. Therefore, the opening of the template formed with this high positional accuracy. Through this, the processing liquid can be supplied to the substrate with high positional accuracy.
  • a program that operates on a computer of a control unit that controls a substrate processing system in order to cause the substrate processing system to execute a processing liquid supply method for supplying the processing liquid to a predetermined position of the substrate.
  • a processing liquid supply method a plurality of openings are formed on the front surface at locations corresponding to the predetermined positions, and the back surface from the openings formed on the surface.
  • a template having a flow passage communicating with the template is placed on a rotation holding unit that holds and rotates the back surface of the template, supplies the processing liquid to the surface of the template, and rotates the rotation holding unit to perform the circulation.
  • the path is filled with the treatment liquid, the substrate is brought into close contact with the surface of the template filled with the treatment liquid, and then the template While maintaining the adhesion between the substrate, the template and said substrate by causing upside down, supplying the treatment liquid to a predetermined position of the substrate.
  • the processing liquid can be supplied to a predetermined position of the substrate with high positional accuracy.
  • (G) shows a state in which an insulating film is formed in the through hole
  • (h) shows a state in which the insulating film at the bottom of the through hole is selectively removed
  • i) shows a state in which a metal film and a connection electrode are formed.
  • It is a longitudinal cross-sectional view which shows the state by which the wafer was laminated
  • It is explanatory drawing which shows the outline of a structure of the template concerning other embodiment. It is a top view which shows arrangement
  • (A) is explanatory drawing which shows a thin plate-shaped wafer
  • (b) is explanatory drawing which shows the state which laminated
  • FIG. 1 is a plan view showing an outline of a configuration of a substrate processing system 1 including a processing liquid supply apparatus that performs a processing liquid supply method according to the present embodiment.
  • the substrate processing system 1 is, for example, configured to display a plurality of wafers W (hereinafter simply referred to as “wafers W”) to which a support plate is bonded by, for example, a wafer bonding apparatus (not shown) provided outside. 1, a cassette station 2 for carrying in / out the substrate processing system 1 in a cassette C unit and a wafer W in / out of the cassette C, and various processing apparatuses for performing predetermined processing on the wafer W And a processing station 3 provided with a unit.
  • wafers W a plurality of wafers W (hereinafter simply referred to as “wafers W”) to which a support plate is bonded by, for example, a wafer bonding apparatus (not shown) provided outside.
  • a cassette station 2 for carrying in / out the substrate processing system 1 in a cassette C unit and a wafer W in / out of the cassette C, and various processing apparatuses for performing predetermined processing on the wafer W
  • a processing station 3
  • a coating of the insulating film 10 is formed on the surface Wa, and the metal layer 11 is formed on the upper surface of the insulating film 10.
  • the metal layer 11 laminated on the wafer W is in contact with the wafer W through the insulating film 10 at a predetermined location.
  • the location where the metal layer 11 and the wafer W are in contact with each other and penetrates the wafer W This is where fine through holes H called TSV are formed in the three-dimensional integration technology.
  • corresponds to the predetermined position where a process liquid is supplied in this invention.
  • a support plate S such as a glass substrate is bonded.
  • the support plate S is accommodated in the cassette C so that the support plate S is positioned below the wafer W, that is, with the back surface Wb of the wafer W facing upward.
  • FIG. 2 a state in which two metal layers 11 and one insulating layer 12 are alternately stacked is illustrated, but the number and configuration of the metal layers 11 and the insulating layers 12 are arbitrary. To be determined.
  • the cassette station 2 is provided with a cassette mounting table 20, and the cassette mounting table 20 is provided with, for example, three cassette mounting plates 21.
  • the cassette mounting plates 21 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1), and the plurality of cassette mounting plates 21 are used for loading / unloading the cassette C to / from the outside of the substrate processing system 1. When performing, the cassette C can be mounted.
  • the cassette station 2 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction as shown in FIG.
  • the wafer transfer device 23 is also movable in the vertical direction and the vertical axis direction ( ⁇ direction), and includes a cassette C on each cassette mounting plate 21 and a transition device (third block G3 of the processing station 3 described later)
  • the wafer W can be transferred to / from the not shown.
  • the processing station 3 adjacent to the cassette station 2 is provided with a plurality of, for example, three blocks G1, G2, and G3 having various devices.
  • the first block G1 is provided on the back side of the processing station 3 (X direction positive direction side in FIG. 1), and the second block is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1).
  • Block G2 is provided.
  • a third block G3 is provided on the cassette station 2 side of the processing station 3 (Y direction negative direction side in FIG. 1).
  • the first block G1 includes an entire surface etching apparatus 30 that etches the back surface Wb of the wafer W to a predetermined thickness, and an etchant as a processing liquid at a predetermined position on the back surface Wb of the wafer W etched to a predetermined thickness.
  • An insulating film forming device 33 for forming an insulating film on the wafer W and an insulating film removing device 34 for selectively removing the insulating film formed on the wafer W are arranged in this order from the cassette station 2 side.
  • a metal film deposition apparatus 40 that forms a metal film on the back surface Wb of the wafer W and an electrode formation apparatus 41 that forms connection electrodes on the wafer W are arranged in the reverse order from the cassette station 2 side. Is arranged in.
  • a transition (not shown) device for delivering the wafer W between the wafer transfer device 23 and a wafer transfer device 50 described later is provided.
  • a wafer transfer area D is formed in an area surrounded by the first block G1 to the third block G3.
  • a wafer transfer device 50 is disposed in the wafer transfer region D.
  • the wafer transfer apparatus 50 has a transfer arm that is movable in the Y direction, the X direction, the ⁇ direction, and the vertical direction, for example.
  • the wafer transfer device 50 moves in the wafer transfer region D and can transfer the wafer to a predetermined device in the surrounding first block G1 and second block G2.
  • FIG. 3 is a cross-sectional view showing an outline of the configuration of the processing liquid supply device 31
  • FIG. 4 is a vertical cross-sectional view showing an outline of the configuration of the processing liquid supply device 31.
  • the processing liquid supply device 31 is provided in the processing container 61 and a processing container 61 that houses a template 60 used in the processing liquid supply method according to the present embodiment.
  • a spin chuck 62 is provided as a rotation holding unit that holds and rotates the template 60.
  • the spin chuck 62 has a drive mechanism 63 incorporating a motor (not shown), for example, and can be rotated at a predetermined speed by the drive mechanism 63.
  • a cup 64 that receives and collects the processing liquid scattered or dropped from the template 60.
  • a lower surface of the cup 64 is connected to a discharge pipe 65 that discharges the collected liquid and an exhaust pipe 66 that exhausts the atmosphere in the cup 64.
  • a rail 67 extending along the Y direction is formed on the negative side of the cup 64 in the X direction (downward direction in FIG. 3).
  • the rail 67 is formed, for example, from the outside of the cup 64 in the Y direction negative direction (left direction in FIG. 3) to the outside in the Y direction positive direction (right direction in FIG. 3).
  • Arms 68a, 68b, and 68c are attached to the rail 67, and a processing liquid supply nozzle 70a that discharges an etching solution, an electrodeposition insulating film solution, and an electrolytic plating solution as processing solutions to the arms 68a, 68b, and 68c, respectively. , 70b, 70c are supported.
  • the arms 68a, 68b, and 68c are movable on the rail 67 by nozzle driving portions 71a, 71b, and 71c.
  • the arms 68a, 68b, 68c can be moved up and down by the nozzle driving units 71a, 71b, 71c, and the heights of the processing liquid supply nozzles 70a, 70b, 70c can be adjusted.
  • the wafer W on which the support plate S is bonded is disposed above the spin chuck 62, and the back surface Wb of the wafer W is opposed to the spin chuck 62, that is, the template 60 on which the spin chuck 62 is held.
  • a holding mechanism 72 is provided to hold it.
  • the holding mechanism 72 is supported on, for example, the upper end of the processing container 61 by a moving mechanism 73 that moves the holding mechanism 72 in the vertical direction and the horizontal direction.
  • a water stop plate 80 is inserted between the spin chuck 62 and the template 60, and the water stop plate 80 and the template 60 are gripped by a clamp mechanism (not shown), for example.
  • the spin chuck 62 holds the water stop plate 80 by suction, for example, so that the template 60 is held by the spin chuck 62.
  • the template 60 is a substantially disk-shaped member in which a plurality of openings 90 having a predetermined pattern are formed on the surface 60a as shown in FIGS. 4 and 5, for example.
  • the arrangement of the opening 90 provided in the template 60 corresponds to the position where the metal layer 11 and the wafer W are in contact with each other, that is, the position where the through hole H called TSV is to be formed in the three-dimensional integration technique. is doing.
  • a flow passage 91 communicating with the opening 90 is formed inside the template 60, and the flow passage 91 extends to the back surface 60 b of the template 60.
  • the template 60 is formed of an insulator having resistance to an etchant used for etching the wafer W, for example, and silicon carbide (SiC) can be used, for example.
  • a metal film 92 as a first electrode 92 is formed on the entire inner surface of the flow passage 91 of the template 60 as shown in FIG. Further, a part of the metal film 92 extends to the back surface 60 b of the template 60, and the connection terminal 93 is formed by the extended metal film 92.
  • the second electrode 94 formed in a pair with the metal film 92 as the first electrode 92 is electrically connected to the metal layer 11 formed on the surface Wa of the wafer W, for example, as shown in FIG. Is provided. Note that the second electrode 94 may be embedded in the support plate S in advance so as to be in electrical contact with the metal layer 11 of the wafer W, or the wafer W and the support plate S are bonded together.
  • a conductive adhesive may be used, and the adhesive and the second electrode 94 may be electrically connected to each other. If the conductive layer is electrically connected to the metal layer 11 of the wafer W, the connection method is arbitrary. A decision can be made. Further, the first electrode 92 is formed of a metal having resistance to the etching solution.
  • the water stop plate 80 is a disk-shaped member formed to have substantially the same diameter as the template 60.
  • An electric circuit (not shown) is formed on the surface 80 a of the water stop plate 80, that is, the surface facing the back surface 60 b of the template 60 of the water stop plate 80 in FIG. 4, and the water stop plate 80 and the template 60 are brought into contact with each other.
  • the electrical circuit of the water stop plate 80 and the connection terminal 93 provided on the back surface 60b of the template 60 are configured to be electrically connected.
  • the water stop plate 80 is also formed of an insulator having resistance to an etchant used for etching the wafer W.
  • silicon carbide can be used.
  • a lid 95 is provided at a position corresponding to the end of the flow passage 91 on the opposite side of the opening 90.
  • the lid 95 is configured to be openable and closable.
  • the lid 95 is opened / closed via an opening / closing mechanism (not shown) by an electric signal transmitted from the control unit 110 (described later) through an electric circuit (not shown) of the water stop plate 80, for example.
  • the selective etching apparatus 32 holds a processing container 100 for storing the template 60 and the wafer W therein, a mounting table 101 for mounting the template 60 and the wafer W, and a circuit board 102.
  • a mechanism 103 and a moving mechanism 104 that moves the holding mechanism 103 in the vertical direction and the horizontal direction are provided.
  • a vacuum chuck or the like is used for the mounting table 101.
  • the circuit board 102 has a function of transmitting an electric signal exchanged between the control unit 110 provided in the substrate processing system 1 and an electric circuit formed on the water stop plate 80.
  • the control unit 110 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for monitoring the current flowing between the first electrode 92 and the second electrode 94 during supply of the etchant in the selective etching apparatus 32, control of the power supply apparatus, and etching. Yes.
  • the program storage unit also stores a program for controlling operations of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize later-described wafer processing in the substrate processing system 1.
  • the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 110 from the storage medium H.
  • a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 110 from the storage medium H.
  • the insulating film forming apparatus 33 and the electrode forming apparatus 41 have the same configuration as that of the selective etching apparatus 32, and thus description thereof is omitted.
  • 8 and 9 are a flowchart showing an example of main steps of the wafer W processing method and explanatory views schematically showing the state of the wafer W in each step.
  • a cassette C containing a plurality of wafers W bonded to the support plate S by a bonding apparatus (not shown) provided outside the substrate processing system 1 is a predetermined cassette in the cassette station 2. It is mounted on the mounting plate 21. Thereafter, the wafer W in the cassette C is taken out by the wafer transfer device 23, and transferred to the full surface etching device 30 by the wafer transfer device 50 through the transition device provided in the third block G 3 of the processing station 3.
  • an etching solution is supplied to the back surface Wb of the wafer W.
  • the etching solution for example, a mixed solution of hydrofluoric acid and isopropyl alcohol (HF / IPA), a mixed solution of hydrofluoric acid and ethanol, or the like is used.
  • HF / IPA hydrofluoric acid and isopropyl alcohol
  • a mixed solution of hydrofluoric acid and ethanol, or the like is used.
  • the wafer W is etched to a predetermined thickness (step S1 in FIG. 8 and FIG. 9A). Thereafter, the wafer W is transferred to the processing liquid supply device 31 by the wafer transfer device 50.
  • the wafer W transferred to the processing liquid supply apparatus 31 is temporarily held by the holding mechanism 72.
  • the wafer W is held by the holding mechanism 72 so that the back surface Wb faces downward, that is, the back surface Wb faces the front surface 60 a of the template 60.
  • the processing liquid supply nozzle 70a moves to the center of the template 60, and the processing liquid supply nozzle 70a.
  • an etching solution as a treatment solution is dropped on the template surface 60a.
  • the etching solution L dropped from the processing solution supply nozzle 70a is filled into the flow passage 91 of the template 60 through the opening 90 (step S2 in FIG. 8 and FIG.
  • the excess etching solution is shaken off from the outer periphery of the template 60 and is discharged from the cup 64 through the discharge pipe 65.
  • a mixed solution of hydrofluoric acid and isopropyl alcohol (HF / IPA) is used as the etching solution.
  • the template 60 and the water stop plate 80 may be placed in advance on the spin chuck 62 before the wafer W is transferred to the processing liquid supply device 31, or may be placed on the spin chuck 62 after the wafer W is transferred. It may be placed.
  • the wafer W may also be transferred to the processing liquid supply apparatus 31 after the etching liquid is filled in the flow path 91 of the template 60.
  • the rotation of the spin chuck 62 is stopped.
  • the wafer W held by the holding mechanism 72 and the template 60 are in a predetermined positional relationship, that is, the position where the through hole H is formed in the wafer W matches the position of the opening 90 of the template 60.
  • Position adjustment is performed by the moving mechanism 73.
  • the moving mechanism 73 descends to bring the back surface Wb of the wafer W into close contact with the front surface of the template 60 (step S3 in FIG. 8 and FIG. 9C).
  • the template 60 and the wafer W are transferred to the selective etching apparatus 32 by the wafer transfer apparatus 50 while maintaining a state in which the template 60 and the wafer W are in mechanical contact with each other by a clamp (not shown), for example.
  • the template 60 and the wafer W transferred to the selective etching apparatus 32 are turned upside down from the state where the back surface Wb of the wafer W faces upward, that is, the state held by the spin chuck 62 of the processing liquid supply apparatus 31. Is mounted on the mounting table 101 (step S4 in FIG. 8). During this time, the template 60 and the wafer W are kept in close contact with each other.
  • the circuit board 102 and the water stop plate 80 held by the holding mechanism 103 are formed in a predetermined positional relationship, that is, the circuit board 102 and the water stop plate 80.
  • the position adjustment is performed by the moving mechanism 104 so that the electrical circuit is properly electrically connected. Thereafter, the moving mechanism 104 is lowered to bring the circuit board 102 into contact with the water stop plate 80, and electrical conduction between the circuit board 102 and the water stop plate 80 is ensured (step S5 in FIG. 8).
  • the first electrode 92 is used as a cathode
  • the second electrode 94 is used as an anode
  • the first electrode 92 and the second electrode 94 are interposed between them. Electrolytic etching of the wafer W is performed by applying a predetermined voltage.
  • the control unit 110 monitors the value of the current flowing between the first electrode 92 and the second electrode 94 by applying a voltage, and also includes an electric circuit (not shown) of the water stop plate 80 and An electric signal is transmitted to the lid body 95 through the circuit board 102 to open the lid body 95 (step S6 in FIG. 8 and FIG. 8D).
  • the lid 95 By opening the lid 95, the air in the flow passage 91 is vented, and bubbles generated from the wafer W by electrolytic etching are discharged through the flow passage 91, and the etching solution is appropriately dropped, and the etching solution and the wafer are discharged. Contact with W is always maintained.
  • the thickness of the wafer W which is a semiconductor
  • the resistance value between the first electrode 92 and the second electrode 94 is increased. Change.
  • the current value monitored by the control unit 110 changes.
  • the etching of the wafer W further proceeds, and the etching solution L reaches the metal layer 11 of the wafer W as shown in FIG.
  • the through hole H is formed in the wafer W, and the electrical resistance value between the first electrode 92 and the second electrode 94 is rapidly decreased. Therefore, the value of the current value monitored by the control unit 110 also rapidly decreases and falls below a predetermined set value.
  • the controller 110 determines that the etching has been completed, and the application of voltage by the power supply device (not shown) is stopped. Further, the controller 110 simultaneously performs the closing operation of the lid 95, whereby the dropping of the etching solution from the template 60 is stopped, and the etching process is finished (step S7 in FIG. 8).
  • the template 60 and the wafer W are transferred again to the processing liquid supply apparatus 31 by the wafer transfer apparatus 50.
  • the template 60 and the wafer W transferred to the processing liquid supply device 31 are turned upside down from the state in which the back surface Wb of the wafer W faces downward, that is, the state where it is placed on the mounting table 101 of the selective etching device 32.
  • the state is held by the spin chuck 62.
  • the wafer W and the support plate S are held by the holding mechanism 72, and the wafer W and the template 60 are separated. Note that the separation between the wafer W and the template 60 may be performed in the selective etching apparatus 32.
  • the template 60 held by the spin chuck 62 is rotated and the processing liquid supply nozzle 70b is moved to the center of the template 60, and the electrodeposition insulating film solution is dropped as a processing liquid onto the surface 60a of the template from the processing liquid supply nozzle 70b. Is done. Then, the electrodeposition insulating film solution dropped from the treatment liquid supply nozzle 70b is filled in the flow passage 91 of the template 60 as in the case of the etching liquid L (step S8 in FIG. 8). At the same time, the excess electrodeposition insulating film solution is shaken off from the outer periphery of the template 60 and discharged from the cup 64 through the discharge pipe 65. For example, an electrodeposited polyimide solution is used as the electrodeposition insulating film solution.
  • the rotation of the spin chuck 62 is stopped.
  • position adjustment is performed by the moving mechanism 73 so that the wafer W held by the holding mechanism 72 and the template 60 have a predetermined positional relationship.
  • the moving mechanism 73 descends to bring the back surface Wb of the wafer W into close contact with the surface of the template 60 again (step S9 in FIG. 8 and FIG. 9F).
  • the template 60 and the wafer W are transferred to the insulating film forming apparatus 33 by the wafer transfer apparatus 50 while maintaining a close contact state.
  • the template 60 and the wafer W transferred to the insulating film forming apparatus 33 are mounted on the mounting table 101, and then the circuit board 102 and the water stop plate 80 held by the holding mechanism 103 are in a predetermined positional relationship. In addition, the position is adjusted by the moving mechanism 104. Thereafter, the moving mechanism 104 descends to bring the circuit board 102 into contact with the water stop plate 80, and electrical connection between the circuit board 102 and the water stop plate 80 is ensured (step S10 in FIG. 8).
  • step S11 in FIG. 8 A predetermined voltage is applied (step S11 in FIG. 8).
  • the insulating film 140 having a uniform thickness is formed in the through-hole H formed by the selective etching apparatus 32.
  • the electrodeposition polyimide solution The supply of P and the application of voltage are stopped (step S12 in FIG. 8). Note that when the insulating film 140 is formed, the lid body 95 is appropriately opened and closed by the controller 110 as in the case of the selective etching described above.
  • the wafer W on which the insulating film 140 is formed is separated from the template 60 and transferred to the insulating film removing apparatus 34 by the wafer transfer apparatus 50.
  • the wafer W transferred to the insulating film removing apparatus 34 selectively removes the insulating film 140 at the bottom of the through-hole H using, for example, laser processing or pulse power (Steps S13 and FIG. 9 in FIG. 8). (H)).
  • the insulating film 140 is selectively removed as shown in FIG. 9H, the wafer W on which the insulating film 140 is formed after step S13 in FIG.
  • the first electrode 92 is used as a cathode
  • the second electrode 94 is used as an anode
  • a voltage of about 30 V to 100 V is applied between the first electrode and the second electrode 94. Even if it is applied, the insulating film 140 at the bottom of the through hole H can be selectively removed as in the case of using laser processing or pulse power.
  • the wafer W is transferred to the metal film deposition apparatus 40 by the wafer transfer apparatus 50.
  • a nickel metal film 141 is formed as a barrier metal on the upper surface of the insulating film 140 (step S14 in FIG. 8).
  • a template 60 filled with an electrolytic plating solution as a treatment liquid is disposed in close contact with the flow path 91, as in the case of the selective etching process and the insulating film formation described above.
  • a predetermined voltage is applied between the first electrode 92 and the second electrode 94 using the first electrode 92 as an anode and the second electrode 94 as a cathode.
  • the controller 110 appropriately performs opening / closing operation of the lid 95.
  • the metal film 141 is selectively formed in the through hole H and on the outer peripheral edge thereof.
  • the wafer W on which the metal film 141 is formed in the metal film deposition apparatus 40 is transferred to the connection electrode forming apparatus 41 by the wafer transfer apparatus 50 and mounted on the mounting table 101.
  • a template 60 filled with an electrolytic plating solution as a processing solution is placed in close contact with the back surface Wb of the wafer W placed on the placement table 101 in the same manner as in the case of the metal film deposition apparatus 40.
  • a predetermined voltage is applied between the first electrode 92 and the second electrode 94 using the first electrode 92 as an anode and the second electrode 94 as a cathode.
  • the controller 110 appropriately performs opening / closing operation of the lid 95.
  • the connection electrode 142 is formed inside the through hole H (step S15 in FIG. 8).
  • the wafer W on which the connection electrode 142 is formed is transferred to the cassette station 2 by the wafer transfer device 50.
  • the wafer W accommodated in the cassette C of the cassette station 2 is transported to a support plate peeling device (not shown) provided outside, and the support plate S is peeled from the wafer W in the support plate peeling device. Thereafter, the wafer W is inspected by an inspection apparatus (not shown), and the wafers W are bonded together by a wafer laminating apparatus (not shown), and three-dimensionally laminated as shown in FIG. A semiconductor device is formed.
  • the back surface Wb of the wafer W is applied to the front surface 60a of the template 60 in a state where the template flow path 91 in which the predetermined opening 90 is formed is filled with, for example, an etching liquid as a processing liquid. Since the template 60 and the wafer W are turned upside down with the template 60 and the wafer W being in close contact with each other, the flow passage 91 of the template 60 is filled in a position corresponding to the opening 90 of the template 60 in the wafer W. Etching solution can be supplied.
  • the opening 90 of the template 60 used in the method of the present embodiment can be formed with high positional accuracy by using, for example, machining or photolithography technology.
  • the etching solution can be supplied to the wafer W with high positional accuracy through the opening 90 of the formed template 60.
  • the processing liquid supply device 31 used for filling the template 60 with the etching liquid has the same configuration as a so-called coating processing apparatus for applying a resist liquid or the like to the conventional wafer W, for example, and the method according to the present embodiment. Since no special apparatus is required for carrying out the process, an inexpensive method of supplying a processing solution can be provided.
  • the etching solution is placed at a position other than a predetermined position. Or leaking out of the flow path 91 of the template 60 to the outside.
  • the surface 60a of the template 60 may be subjected to a hydrophobic treatment.
  • the adhesion between the template 12 and the wafer W is complete by performing the hydrophobization treatment in the same manner as the front surface 60a of the template 60 except for the position corresponding to the opening 90 of the template 60 on the back surface Wb of the wafer W. Even if there is a minute gap between them, the processing liquid filled in the flow passage 91 does not spread to the back surface Wb of the wafer W other than the position corresponding to the opening 90. Therefore, in such a case, it is possible to reliably prevent the processing liquid from being supplied to a position other than the predetermined position of the wafer W.
  • the wafer 95 is etched by opening and closing the lid body 95 to release air from the flow passage 91 of the template 60.
  • the supply and stop of the liquid can be controlled.
  • the current value flowing between the first electrode 92 and the second electrode 94 is measured by the control unit 110, so that the change in the current value is measured.
  • the control unit 110 it is possible to accurately monitor the etching state, that is, to accurately determine the end time of etching, and to control the lid 95 based on the determination, thereby appropriately controlling the supply amount of the etching solution. Therefore, the supply of the etching solution does not become insufficient or excessive.
  • the monitoring of the processing state due to a change in current value can be applied to cases other than the case where an etching solution is used as the processing solution.
  • the insulating film 140 is formed using an electrodeposition insulating film solution. It can also be used when forming the metal film 141 using an electrolytic plating solution.
  • the lid 95 is provided on the water stop plate 80.
  • the lid body 95 functions as the water stop plate 80, it is not necessary to use the water stop plate 80.
  • the water stop plate 80 becomes unnecessary, the alignment work between the water stop plate 80 and the template 60 becomes unnecessary, so the work process for supplying the processing liquid to the wafer W can be simplified. Thereby, for example, the throughput of wafer W processing can be improved.
  • the processing liquid filled in the flow passage 91 of the template 60 is dropped by opening the lid 95, and the processing liquid is supplied to the wafer W.
  • a vibration mechanism 150 that vibrates the template 60 or the wafer W is provided in the selective etching apparatus 32, for example, and the template 60 is vibrated by the vibration mechanism 150, thereby
  • the replacement of the reacted etching solution L with the unreacted etching solution L may be promoted, that is, the etching solution may be supplied smoothly.
  • vibration mechanisms 150a to 150d are respectively provided in the vertical and horizontal directions of the mounting table 101 in a plan view, and the vibration mechanisms 150a to 150d are sequentially rotated, for example, clockwise by the control unit 110.
  • a vortex may be formed in the through-hole H by performing vibration and stopping. By forming a vortex in the through hole H, the replacement of the etchant L can be further promoted.
  • the method of forming a vortex in the through hole H by vibration to discharge the bubbles or replace the etching solution L is not limited to the above embodiment, and for example, as shown in FIG.
  • a vibration mechanism 160 may be provided in each opening 90 or each flow passage 91, and each opening 90 or each flow passage 91 may be separately excited to form a vortex.
  • the template 60 is formed in a disk shape in which the flow passage 91 is formed.
  • the template 60 does not necessarily have a disk shape, for example, a rectangular shape. May be.
  • the same template 60 is used to supply the processing liquid during the wafer etching process, the insulating film forming process, and the metal film forming process. However, it is formed on the template used for each process.
  • the openings 60 to be formed are not necessarily formed at the same position. Specifically, for example, by increasing the number of openings of the template used for supplying the etching to the number of openings provided in the template for supplying the electrolytic plating solution, the through-hole H where the connection electrode 142 is not formed is formed. Can be formed on the wafer W.
  • the through hole H in which the connection electrode 142 is not formed can be used for heat dissipation of the device formed on the wafer W, or can be used as the through hole H for forming a spare electrode. It can also be used as a lane.
  • the processing liquid is supplied by the template 60 only once in each process.
  • the processing liquid supply target is not the wafer W but a large size such as an FPD (flat panel display).
  • through holes H may be formed over the entire surface of the FPD by repeatedly performing etching while moving the template 60 with respect to a part of the FPD. Further, when the through holes H are formed on the wafer W in units of chips, the etching may be repeatedly performed while moving the template 60 with respect to the wafer W.
  • hydrofluoric acid and isopropyl alcohol are used as the etchant L for the wafer W.
  • a hydrofluoric acid solution may be used.
  • the first electrode 92 and the second electrode 94 may be omitted.
  • the object to be etched is a silicon oxide film (SiO) formed on the wafer W or a silicon nitride film (SiN)
  • buffered hydrofluoric acid (HF) is used as the etchant L, for example.
  • / NH4HF) or phosphoric acid (H3PO4) may be used.
  • the first electrode 92 and the second electrode 94 may be omitted.
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display
  • the present invention is useful for selectively etching a substrate.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention porte sur un procédé pour délivrer un liquide de traitement, dans lequel procédé un gabarit est disposé sur une section tournante/de support qui fait tourner le gabarit en supportant la surface arrière du gabarit, ledit gabarit ayant, dans la surface avant, une pluralité d'ouvertures formées dans des zones qui correspondent à des positions prédéterminées, et comportant des passages d'écoulement qui communiquent avec la surface arrière à partir des ouvertures formées dans la surface avant. Le liquide de traitement est délivré à la surface avant du gabarit, et les passages d'écoulement sont remplis par le liquide de traitement par la rotation de la section tournante/de support. Un substrat est amené en contact étroit avec la surface avant du gabarit rempli du liquide de traitement, après quoi le liquide de traitement est délivré aux positions prédéterminées sur le substrat par basculement vertical du gabarit et du substrat, tout en maintenant le contact étroit entre le gabarit et le substrat.
PCT/JP2011/060050 2010-05-19 2011-04-25 Procédé pour délivrer un liquide de traitement, et support de stockage informatique WO2011145440A1 (fr)

Applications Claiming Priority (2)

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JP2010115025A JP2011243768A (ja) 2010-05-19 2010-05-19 処理液の供給方法、プログラム及びコンピュータ記憶媒体
JP2010-115025 2010-05-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109594119A (zh) * 2018-12-11 2019-04-09 大连理工大学 一种电致化学抛光装置及其工作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281715A (ja) * 1985-10-07 1987-04-15 Nec Kyushu Ltd 半導体製造装置
JP2006073577A (ja) * 2004-08-31 2006-03-16 Seiko Epson Corp 半導体ウエハの薄型加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281715A (ja) * 1985-10-07 1987-04-15 Nec Kyushu Ltd 半導体製造装置
JP2006073577A (ja) * 2004-08-31 2006-03-16 Seiko Epson Corp 半導体ウエハの薄型加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109594119A (zh) * 2018-12-11 2019-04-09 大连理工大学 一种电致化学抛光装置及其工作方法

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