WO2013002012A1 - Appareil de modification de surface, système de collage et procédé de modification de surface - Google Patents

Appareil de modification de surface, système de collage et procédé de modification de surface Download PDF

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Publication number
WO2013002012A1
WO2013002012A1 PCT/JP2012/064769 JP2012064769W WO2013002012A1 WO 2013002012 A1 WO2013002012 A1 WO 2013002012A1 JP 2012064769 W JP2012064769 W JP 2012064769W WO 2013002012 A1 WO2013002012 A1 WO 2013002012A1
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WIPO (PCT)
Prior art keywords
processing
wafer
processing gas
plasma generation
region
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Application number
PCT/JP2012/064769
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English (en)
Japanese (ja)
Inventor
重徳 北原
典彦 岡本
Original Assignee
東京エレクトロン株式会社
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Publication of WO2013002012A1 publication Critical patent/WO2013002012A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding

Definitions

  • the present invention relates to a surface modification device, a bonding system, and a surface modification method for modifying the surfaces to be bonded of the substrates before bonding the substrates to each other.
  • the bonding apparatus has beam irradiation means for irradiating the surface of a wafer with an inert gas in a plasma state, and a set of work rollers for pressing the two wafers in a state where the two wafers are overlapped. is doing.
  • the surface (bonding surface) of the wafer is modified by the beam irradiation means, and Van der Waals force is generated between the surfaces of the two wafers in a state where the two wafers are overlapped. Temporary joining. Thereafter, the wafers are bonded together by pressing two wafers (Patent Document 1).
  • the present invention has been made in view of such a point, and an object thereof is to appropriately modify the surfaces of the substrates before the substrates are bonded to each other.
  • the present invention provides a surface modification device for modifying a surface to which substrates are bonded before bonding the substrates to each other, and includes a processing container that accommodates the substrate, and the processing container A placement unit for placing a substrate thereon, a gas supply mechanism for supplying a processing gas into the processing container, a plasma generation mechanism for converting the processing gas into plasma in the processing container, and the processing container
  • the inside is divided into a plasma generation region for converting the processing gas into plasma and a processing region for modifying the surface of the substrate on the mounting portion using ions of the processing gas generated in the plasma generation region.
  • an ion passage structure provided on the surface.
  • the ion passage structure includes a pair of electrodes to which a predetermined voltage is applied, and the ion passage structure has an opening through which ions of the processing gas pass from the plasma generation region to the processing region.
  • the surface of the substrate refers to a bonding surface to which the substrate is bonded.
  • the present invention by applying a predetermined voltage to the pair of electrodes of the ion passage structure, a predetermined energy is given to the ions of the processing gas generated in the plasma generation region, and only the ions of the processing gas are applied.
  • the plasma treatment region can be introduced into the treatment region.
  • the surface of the substrate on the mounting portion can be modified using the ions of the processing gas.
  • the collision force when the ions of the processing gas reach the surface of the substrate is extremely small as compared with the conventional case where plasma is used. For this reason, the surface of the substrate is not physically damaged, and the flatness of the surface of the substrate is not impaired.
  • the surface of the substrate can be appropriately modified without damaging the substrate. Accordingly, the substrates can be appropriately bonded thereafter.
  • a bonding system including the surface modification device, the surface hydrophilization device for hydrophilizing the surface of the substrate modified by the surface modification device, and the surface hydrophilization device. And a bonding apparatus for bonding substrates whose surfaces are hydrophilized.
  • a surface modification method for modifying a surface to which a substrate is bonded in a surface modification apparatus before bonding the substrates to each other, wherein the surface modification apparatus contains the substrates.
  • a processing container that is disposed in the processing container, places a substrate thereon, a gas supply mechanism that supplies a processing gas into the processing container, and converts the processing gas into plasma in the processing container Using the plasma generation mechanism, a plasma generation region for converting the processing gas into plasma, and processing gas ions generated in the plasma generation region, the surface of the substrate on the mounting portion is modified.
  • An ion having a pair of electrodes to which a predetermined voltage is applied and an opening through which ions of the processing gas pass from the plasma generation region to the processing region.
  • the processing gas supplied from the gas supply mechanism is converted into plasma by the plasma generation mechanism, a predetermined voltage is applied to the pair of electrodes, and the plasma generation region Ions of the processing gas generated in step 1 are introduced into the processing region via the ion passage structure, and the surface of the substrate on the mounting portion is modified using the processing gas ions in the processing region. It is characterized by that.
  • the surfaces of the substrates can be appropriately modified before the substrates are bonded to each other.
  • FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment.
  • FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.
  • the wafer disposed on the upper side may be referred to as “upper wafer W U ”, and the wafer disposed on the lower side may be referred to as “lower wafer W L ”.
  • a bonding surface to which the upper wafer W U is bonded is referred to as “front surface W U1 ”, and a surface opposite to the front surface W U1 is referred to as “back surface W U2 ”.
  • the bonding surface to which the lower wafer W L is bonded is referred to as “front surface W L1 ”, and the surface opposite to the front surface W L1 is referred to as “back surface W L2 ”.
  • SiO 2 films are formed on the surfaces W U1 and W L1 of the wafers W U and W L.
  • the bonding system 1 carries in and out cassettes C U , C L , and C T that can accommodate a plurality of wafers W U and W L and a plurality of superposed wafers W T , respectively, with the outside.
  • the loading / unloading station 2 and the processing station 3 including various processing apparatuses that perform predetermined processing on the wafers W U , W L , and the overlapped wafer W T are integrally connected.
  • the loading / unloading station 2 is provided with a cassette mounting table 10.
  • the cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11.
  • the cassette mounting plates 11 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes C U to the outside of the interface system 1, C L, when loading and unloading the C T, a cassette C U, C L, it is possible to place the C T .
  • carry-out station 2 a wafer over multiple W U, a plurality of lower wafer W L, and is configured to be held by a plurality of overlapped wafer W T.
  • the number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined.
  • One of the cassettes may be used for collecting abnormal wafers.
  • using a one cassette C T for the recovery of the abnormal wafer, and using other cassettes C T for the accommodation of a normal overlapped wafer W T among the plurality of cassettes C T, using a one cassette C T for the recovery of the abnormal wafer, and using other cassettes C T for the accommodation of a normal overlapped wafer W T.
  • a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10.
  • the wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction.
  • the wafer transfer device 22 is also movable in the vertical direction and around the vertical axis ( ⁇ direction), and includes cassettes C U , C L , C T on each cassette mounting plate 11 and a third of the processing station 3 described later.
  • the wafers W U and W L and the superposed wafer W T can be transferred between the transition devices 50 and 51 in the processing block G3.
  • the processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, G3 provided with various devices.
  • a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1)
  • Two processing blocks G2 are provided.
  • a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (Y direction negative direction side in FIG. 1).
  • a surface modification device 30 for modifying the surfaces W U1 and W L1 of the wafers W U and W L is disposed.
  • the surface modification apparatus 30 cuts the double bond of SiO 2 on the surfaces W U1 and W L1 of the wafers W U and W L to form single-bonded SiO, so that the surface W U1. , W L1 is modified.
  • the second processing block G2 includes, for example, a surface hydrophilizing device 40 that hydrophilizes the surfaces W U1 and W L1 of the wafers W U and W L with pure water and cleans the surfaces W U1 and W L1.
  • a surface hydrophilizing device 40 that hydrophilizes the surfaces W U1 and W L1 of the wafers W U and W L with pure water and cleans the surfaces W U1 and W L1.
  • U, bonding device 41 for bonding the W L are arranged side by side in the horizontal direction of the Y-direction in this order from the carry-out station 2 side.
  • the third processing block G3, the wafer W U as shown in FIG. 2, W L, a transition unit 50, 51 of the overlapped wafer W T are provided in two tiers from the bottom in order.
  • a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3.
  • a wafer transfer device 61 is disposed in the wafer transfer region 60.
  • the wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis.
  • the wafer transfer device 61 moves in the wafer transfer region 60, and adds wafers W U , W L , and W to predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. You can transfer the overlapping wafer W T.
  • the surface modification device 30 has a processing container 100 as shown in FIG. An upper surface of the processing container 100 is opened, and a radial line slot antenna 120 described later is disposed in the upper surface opening, so that the processing container 100 can be sealed inside.
  • a suction port 103 is formed on the bottom surface of the processing container 100.
  • an intake pipe 105 communicating with an intake device 104 for reducing the atmosphere inside the processing container 100 to a predetermined degree of vacuum.
  • a mounting table 110 is provided as a mounting unit on which the wafers W U and W L are mounted.
  • Table 110 may be mounted wafer W U, the W L, for example, by electrostatic attraction or vacuum attraction.
  • the mounting table 110 measures the ion current generated by the ions of the process gas to be irradiated on the wafer W U, W L on table 110 mounting as described below (oxygen ions), the ion current meter as another ammeter 111 is provided.
  • a temperature adjusting mechanism 112 for circulating a cooling medium is incorporated.
  • the temperature adjustment mechanism 112 is connected to a liquid temperature adjustment unit 113 that adjusts the temperature of the cooling medium.
  • coolant medium is adjusted by the liquid temperature control part 113, and the temperature of the mounting base 110 can be controlled. As a result, the wafer W mounted on the mounting table 110 can be maintained at a predetermined temperature.
  • the wafer W U the wafer W U, the lift pins for supporting and elevating the the W L from below (not shown) is provided below the mounting table 110.
  • the elevating pins can be protruded from the upper surface of the mounting table 110 through a through hole (not shown) formed in the mounting table 110.
  • the radial opening slot antenna 120 (RLSA: Radial Line Slot Antenna) which supplies the microwave for plasma generation is provided in the upper surface opening part of the processing container 100. As shown in FIG.
  • the radial line slot antenna 120 includes an antenna body 121 having an open bottom surface. Inside the antenna body 121, for example, a flow path (not shown) for circulating a cooling medium is provided.
  • a plurality of slots are formed in the opening on the lower surface of the antenna body 121, and a slot plate 122 that functions as an antenna is provided.
  • a conductive material such as copper, aluminum, nickel or the like is used.
  • a slow phase plate 123 is provided above the slot plate 122 in the antenna body 121.
  • a low-loss dielectric material such as quartz, alumina, aluminum nitride, or the like is used.
  • a microwave transmission plate 124 is provided below the antenna main body 121 and the slot plate 122.
  • the microwave transmission plate 124 is disposed so as to close the inside of the processing container 100 via a sealing material (not shown) such as an O-ring.
  • a sealing material such as an O-ring.
  • a dielectric such as quartz or Al 2 O 3 is used.
  • a coaxial waveguide 126 leading to the microwave oscillation device 125 is connected to the upper part of the antenna body 121.
  • the microwave oscillating device 125 is installed outside the processing container 100 and can oscillate a microwave having a predetermined frequency, for example, 2.45 GHz, with respect to the radial line slot antenna 120.
  • the microwave oscillated from the microwave oscillating device 125 is propagated into the radial line slot antenna 120, compressed by the slow phase plate 123 to be shortened, and circularly polarized by the slot plate 122. After that, the light passes through the microwave transmission plate 124 and is emitted toward the processing container 100.
  • the radial line slot antenna 120, the microwave oscillation device 125, and the coaxial waveguide 126 constitute the plasma generation mechanism in the present invention.
  • a gas supply pipe 130 for supplying oxygen gas as a processing gas into the processing container 100 is connected to the side surface of the processing container 100.
  • the gas supply pipe 130 is disposed above an ion passage structure 140 described later, and supplies oxygen gas to the plasma generation region R ⁇ b> 1 in the processing container 100.
  • the gas supply pipe 130 communicates with a gas supply source 131 that stores oxygen gas therein.
  • the gas supply pipe 130 is provided with a supply device group 132 including a valve for controlling the flow of oxygen gas, a flow rate adjusting unit, and the like.
  • the gas supply pipe 130, the gas supply source 131, and the supply device group 132 constitute the gas supply mechanism in the present invention.
  • An ion passage structure 140 is provided between the mounting table 110 in the processing container 100 and the radial line slot antenna 120. That is, the ion passage structure 140 includes a plasma generation region R1 that converts the oxygen gas supplied from the gas supply pipe 130 into plasma by the microwave radiated from the radial line slot antenna 120, and the plasma generation inside the processing vessel 100.
  • the surfaces W U1 and W L1 of the wafers W U and W L on the mounting table 110 are provided so as to be divided into processing regions R2 for reforming using oxygen ions generated in the region R1.
  • the ion passage structure 140 has a pair of electrodes 141 and 142.
  • the electrode disposed in the upper part may be referred to as “upper electrode 141”, and the electrode disposed in the lower part may be referred to as “lower electrode 142”.
  • An insulating material 143 that electrically insulates the pair of electrodes 141 and 142 is provided between the pair of electrodes 141 and 142.
  • Each of the electrodes 141 and 142 has a circular shape larger than the diameters of the wafers W U and W L in plan view as shown in FIGS.
  • Each electrode 141, 142 has a plurality of openings 144 through which oxygen ions pass from the plasma generation region R1 to the processing region R2.
  • the plurality of openings 144 are arranged in a grid, for example. Note that the shape and arrangement of the plurality of openings 144 are not limited to this embodiment, and can be arbitrarily set.
  • each opening 144 is preferably set shorter than the wavelength of the microwave radiated from the radial line slot antenna 120, for example.
  • the microwave supplied from the radial line slot antenna 120 is reflected by the ion passage structure 140, and the microwave can be prevented from entering the processing region R2.
  • the wafer W U on the mounting table 110, W L is not be directly exposed to the microwave can be prevented damage to the wafer W U, W L microwave.
  • the ion passage structure 140 is connected to a power source 145 that applies a predetermined voltage between the pair of electrodes 141 and 142.
  • the predetermined voltage applied by the power source 145 is controlled by the control unit 300 described later, and the maximum voltage is, for example, 1 KeV.
  • the ion passage structure 140 is connected to an ammeter 146 that measures current flowing between the pair of electrodes 141 and 142.
  • the surface hydrophilizing device 40 has a processing container 150 capable of sealing the inside.
  • the side surface of the wafer transfer area 60 side of the processing chamber 150, the wafer W U, the transfer port 151 of the W L is formed as shown in FIG. 7, the opening and closing a shutter 152 is provided to the out port 151.
  • a spin chuck 160 that holds and rotates the wafers W U and W L is provided at the center of the processing container 150 as shown in FIG.
  • the spin chuck 160 has a horizontal upper surface, and the upper surface is, for example, the wafer W U, suction port for sucking the W L (not shown) is provided. By suction from the suction port, the wafers W U and W L can be sucked and held on the spin chuck 160.
  • the spin chuck 160 has a chuck drive unit 161 provided with, for example, a motor, and can be rotated at a predetermined speed by the chuck drive unit 161.
  • the chuck driving unit 161 is provided with an elevating drive source such as a cylinder, and the spin chuck 160 can be moved up and down.
  • a cup 162 that receives and collects the liquid scattered or dropped from the wafers W U and W L.
  • a discharge pipe 163 for discharging the collected liquid
  • an exhaust pipe 164 for evacuating and exhausting the atmosphere in the cup 162.
  • a rail 170 extending along the Y direction is formed on the negative side of the cup 162 in the X direction (downward direction in FIG. 7).
  • the rail 170 is formed from the outside of the cup 162 on the Y direction negative direction (left direction in FIG. 7) to the outside on the Y direction positive direction (right direction in FIG. 7).
  • a nozzle arm 171 and a scrub arm 172 are attached to the rail 170.
  • the nozzle arm 171, pure water nozzle 173 is supported for supplying pure water to the wafer W U, W L as shown in FIGS.
  • the nozzle arm 171 is movable on the rail 170 by a nozzle driving unit 174 shown in FIG.
  • the pure water nozzle 173 can move from the standby unit 175 installed on the outer side of the cup 162 on the positive side in the Y direction to the upper part of the center of the wafers W U and W L in the cup 162.
  • the nozzle arm 171 can be moved up and down by a nozzle driving unit 174, and the height of the pure water nozzle 173 can be adjusted.
  • a supply pipe 176 that supplies pure water to the pure water nozzle 173 is connected to the pure water nozzle 173.
  • the supply pipe 176 communicates with a pure water supply source 177 that stores pure water therein.
  • the supply pipe 176 is provided with a supply device group 178 including a valve for controlling the flow of pure water, a flow rate adjusting unit, and the like.
  • a scrub cleaning tool 180 is supported on the scrub arm 172.
  • a plurality of thread-like or sponge-like brushes 180a are provided.
  • the scrub arm 172 is movable on the rail 170 by a cleaning tool driving unit 181 shown in FIG. 7, and the scrub cleaning tool 180 is moved from the outside of the cup 162 in the negative Y direction side to the wafer W U in the cup 162. it can be moved to above the central portion of the W L. Further, the scrub arm 172 can be moved up and down by the cleaning tool driving unit 181, and the height of the scrub cleaning tool 180 can be adjusted.
  • the pure water nozzle 173 and the scrub cleaning tool 180 are supported by separate arms, but may be supported by the same arm. Further, the pure water nozzle 173 may be omitted and pure water may be supplied from the scrub cleaning tool 180. Further, the cup 162 may be omitted, and a discharge pipe that discharges liquid to the bottom surface of the processing container 150 and an exhaust pipe that exhausts the atmosphere in the processing container 150 may be connected. Further, in the surface hydrophilizing device 40 having the above configuration, an antistatic ionizer (not shown) may be provided.
  • the bonding apparatus 41 includes a processing container 190 that can seal the inside.
  • the side surface of the wafer transfer area 60 side of the processing vessel 190, the wafer W U, W L, the transfer port 191 of the overlapped wafer W T is formed, close shutter 192 is provided to the out port 191.
  • the inside of the processing container 190 is divided into a transport region T1 and a processing region T2 by an inner wall 193.
  • the loading / unloading port 191 described above is formed on the side surface of the processing container 190 in the transfer region T1.
  • a loading / unloading port 194 for the wafers W U and W L and the overlapped wafer W T is formed on the inner wall 193.
  • a transition 200 for temporarily placing the wafers W U and W L and the superposed wafer W T is provided on the positive side in the X direction of the transfer region T1.
  • the transition 200 is formed in, for example, two stages, and any two of the wafers W U , W L , and the superposed wafer W T can be placed at the same time.
  • a wafer transfer body 202 that is movable on a transfer path 201 extending in the X direction is provided. As shown in FIGS. 8 and 9, the wafer transfer body 202 is also movable in the vertical direction and the vertical axis, and the wafers W U , W in the transfer area T1 or between the transfer area T1 and the processing area T2 are used. L, the polymerization wafer W T can be conveyed.
  • the transfer path 201 and the wafer transfer body 202 constitute a transfer mechanism.
  • Position adjusting mechanism 210 that adjusts the horizontal direction of the wafers W U and W L is provided on the X direction negative direction side of the transfer region T1.
  • Position adjusting mechanism 210 includes a base 211, as shown in FIG. 10, the wafer W U, W L and a holding portion 212 for holding and rotating suction, detection for detecting a position of the notch portion of the wafer W U, W L Part 213. Then, the position adjusting mechanism 210, the wafer W U sucked and held by the holding portion 212, the detection unit 213 while rotating the W L by detecting the position of the notch portion of the wafer W U, W L, the notch Are adjusted to adjust the horizontal orientation of the wafers W U and W L.
  • inverting mechanism 220 which moves between the transfer region T1 and the processing region T2, to and reverses the front and rear surfaces of the upper wafer W U is provided.
  • Inverting mechanism 220 has a holding arm 221 which holds the upper wafer W U as shown in FIG. 11.
  • the suction pads 222 held horizontally by suction on the wafer W U is provided.
  • the holding arm 221 is supported by the first driving unit 223.
  • the first driving unit 223 By the first drive unit 223, the holding arm 221 can be rotated around the horizontal axis and can be expanded and contracted in the horizontal direction.
  • a second driving unit 224 is provided below the first driving unit 223.
  • the first drive unit 223 can rotate about the vertical axis and can be moved up and down in the vertical direction.
  • the second drive unit 224 is attached to a rail 225 extending in the Y direction shown in FIGS.
  • the rail 225 extends from the processing area T2 to the transport area T1.
  • the second driving unit 224 allows the reversing mechanism 220 to move between the position adjusting mechanism 210 and an upper chuck 230 described later along the rail 225.
  • the inverting mechanism 220 also functions as a transport mechanism for transporting the wafer W U, W L, the overlapped wafer W T.
  • the configuration of the inverting mechanism 220 is not limited to the configuration of the above embodiment, it is sufficient to invert the front and rear surfaces of the upper wafer W U.
  • the reversing mechanism 220 may be provided in the processing region T2. Further, a reversing mechanism may be added to the wafer transport body 202, and another transport means may be provided at the position of the reversing mechanism 220. Further, a reversing mechanism may be added to the position adjusting mechanism 210, and another conveying unit may be provided at the position of the reversing mechanism 220.
  • the processing region T2 provided with an upper chuck 230 for attracting and holding the upper wafer W U at the lower surface as shown in FIGS. 8 and 9, the lower chuck 231 which holds adsorbed by placing the lower wafer W L with the upper surface It has been.
  • the lower chuck 231 is provided below the upper chuck 230 and is configured to be disposed so as to face the upper chuck 230. That is, the lower wafer W L held by the wafer W U and the lower chuck 231 on which is held in the upper chuck 230 is adapted to be placed opposite.
  • the upper chuck 230 is supported by a support member 232 provided on the ceiling surface of the processing container 190.
  • the support member 232 supports the outer peripheral portion of the upper surface of the upper chuck 230.
  • a chuck driving unit 234 is provided below the lower chuck 231 via a shaft 233.
  • the chuck driving unit 234 By the chuck driving unit 234, the lower chuck 231 can be moved up and down in the vertical direction and can be moved in the horizontal direction. Further, the lower chuck 231 is rotatable about the vertical axis by the chuck driving unit 234. Below the lower chuck 231, the lift pins for lifting and supporting the lower wafer W L from below (not shown) is provided.
  • the elevating pins are inserted through through holes (not shown) formed in the lower chuck 231 and can protrude from the upper surface of the lower chuck 231.
  • the shaft 233 and the chuck drive unit 234 constitute an elevating mechanism and a moving mechanism.
  • the upper chuck 230 is divided into a plurality of, for example, three regions 230a, 230b, and 230c. These regions 230a, 230b, and 230c are provided in this order from the center of the upper chuck 230 toward the outer periphery as shown in FIG.
  • the region 230a has a circular shape in plan view, and the regions 230b and 230c have an annular shape in plan view.
  • Each region 230a, 230b, the 230c, the suction pipe 240a for sucking and holding the upper wafer W U as shown in FIG. 12, 240b, 240c are provided independently.
  • Different vacuum pumps 241a, 241b, 241c are connected to the respective suction pipes 240a, 240b, 240c.
  • the three regions 230a, 230b, and 230c described above may be referred to as a first region 230a, a second region 230b, and a third region 230c, respectively.
  • the suction tubes 240a, 240b, and 240c may be referred to as a first suction tube 240a, a second suction tube 240b, and a third suction tube 240c, respectively.
  • the vacuum pumps 241a, 241b, and 241c may be referred to as a first vacuum pump 241a, a second vacuum pump 241b, and a third vacuum pump 241c, respectively.
  • a through hole 242 that penetrates the upper chuck 230 in the thickness direction is formed at the center of the upper chuck 230. Central portion of the upper chuck 230 corresponds to the central portion of the upper wafer W U which is attracted and held on the upper chuck 230. A push pin 251 of a push member 250 described later is inserted into the through hole 242.
  • the pushing member 250 has a cylinder structure, and includes a pushing pin 251 and an outer cylinder 252 that serves as a guide when the pushing pin 251 moves up and down.
  • the push pin 251 is movable up and down in the vertical direction through the through hole 242 by, for example, a drive unit (not shown) incorporating a motor.
  • the pressing member 250, the wafer W U to be described later, at the time of bonding of W L, can be pressed by contacting the center portion of the center and lower wafer W L of the upper wafer W U.
  • the upper chuck 230, the upper imaging member 253 as a second imaging member for imaging the surface W L1 of the lower wafer W L is provided.
  • the upper imaging member 253 for example, a wide-angle CCD camera is used. Note that the upper imaging member 253 may be provided on the upper chuck 230.
  • the lower chuck 231 is divided into a plurality of, for example, two regions 231a and 231b. These regions 231a and 231b are provided in this order from the center of the lower chuck 231 toward the outer periphery.
  • the region 231a has a circular shape in plan view
  • the region 231b has an annular shape in plan view.
  • Each region 231a, the 231b, the suction pipe 260a for sucking and holding the lower wafer W L as shown in FIG. 12, 260b are provided independently.
  • Different vacuum pumps 261a and 261b are connected to the suction pipes 260a and 260b, respectively. Therefore, the lower chuck 231, each region 231a, and is capable of setting the vacuum of the lower wafer W L per 231b.
  • the outer peripheral portion of the lower chuck 231, the wafer W U, W L, or jump out from the overlapped wafer W T is the lower chuck 231, the stopper member 262 to prevent the sliding is provided.
  • the stopper member 262, the top portion extends in the vertical direction so as to be positioned above the overlapped wafer W T on at least a lower chuck 231. Further, as shown in FIG. 14, the stopper member 262 is provided at a plurality of places, for example, five places on the outer peripheral portion of the lower chuck 231.
  • the lower chuck 231 is provided with a lower imaging member 263 as a first imaging member that images the surface W U1 of the upper wafer W U as shown in FIG.
  • a lower imaging member 263 for example, a wide-angle CCD camera is used.
  • the lower imaging member 263 may be provided on the lower chuck 231.
  • the above joining system 1 is provided with a control unit 300 as shown in FIG.
  • the control unit 300 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling processing of the wafers W U and W L and the overlapped wafer W T in the bonding system 1.
  • the program storage unit also stores a program for controlling operations of driving systems such as the above-described various processing apparatuses and transfer apparatuses to realize later-described wafer bonding processing in the bonding system 1.
  • the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 300 from the storage medium H.
  • FIG. 15 is a flowchart showing an example of main steps of the wafer bonding process.
  • the cassette C U, the cassette C L accommodating the lower wafer W L of the plurality, and the empty cassette C T is a predetermined cassette mounting plate 11 of the carry-out station 2 accommodating the wafers W U on the plurality Placed on. Thereafter, the upper wafer W U in the cassette C U is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 of the third processing block G3 in the processing station 3.
  • the upper wafer W U is transferred to the surface modification apparatus 30 of the first processing block G1 by the wafer transfer apparatus 61. Wafer after being carried into the surface modifying apparatus 30 W U is placed is delivered to the upper surface of the table 110 mounting the wafer transfer apparatus 61. Thereafter, the wafer transfer device 61 leaves the surface modification device 30 and the gate valve 102 is closed. Note that the upper wafer W U mounted on the mounting table 110 is maintained at a predetermined temperature, for example, 25 ° C. to 30 ° C. by the temperature adjustment mechanism 112.
  • the intake device 104 is operated, and the atmosphere inside the processing container 100 is reduced to a predetermined degree of vacuum, for example, 67 Pa to 333 Pa (0.5 Torr to 2.5 Torr) via the intake port 103. Then, processing on the wafer W U as described below, the atmosphere in the processing chamber 100 is maintained at the predetermined degree of vacuum.
  • a predetermined degree of vacuum for example, 67 Pa to 333 Pa (0.5 Torr to 2.5 Torr) via the intake port 103.
  • oxygen gas is supplied from the gas supply pipe 130 toward the plasma generation region R1 in the processing container 100. Further, for example, a microwave of 2.45 GHz is radiated from the radial line slot antenna 120 toward the plasma generation region R1. By this microwave radiation, the oxygen gas is excited and turned into plasma in the plasma generation region R1, for example, oxygen gas is ionized. At this time, the microwave traveling downward is reflected by the ion passage structure 140 and remains in the plasma generation region R1. As a result, high-density plasma is generated in the plasma generation region R1.
  • a predetermined voltage is applied to the pair of electrodes 141 and 142 by the power source 145. Then, only oxygen ions generated in the plasma generation region R1 by the pair of electrodes 141 and 142 pass through the opening 144 of the ion passage structure 140 and flow into the processing region R2.
  • the energy applied to the oxygen ions passing through the pair of electrodes 141 and 142 is controlled by controlling the voltage applied between the pair of electrodes 141 and 142 by the control unit 300.
  • the energy imparted to the oxygen ions is sufficient to break the double bond of SiO 2 on the surface W U1 of the upper wafer W U to form single bond SiO, and the surface W U1 is damaged. Not set to energy.
  • the current value of the current flowing between the pair of electrodes 141 and 142 is measured by the ammeter 146. Based on the measured current value, the amount of oxygen ions passing through the ion passage structure 140 is grasped. Then, in the control unit 300, the supply amount of oxygen gas from the gas supply pipe 130 and the pair of electrodes 141 and 142 are set so that the passage amount becomes a predetermined value based on the grasped passage amount of oxygen ions. Various parameters such as the voltage between them are controlled.
  • oxygen ions are introduced into the processing region R2 is injected is irradiated onto the surface W U1 of the upper wafer W U on the mounting table 110. Then, the irradiated oxygen ions, a double bond of SiO 2 is cut in the surface W U1 a single bond SiO. Also, because this is the modification of the surface W U1 it has been used oxygen ions, oxygen ions themselves which are applied to the surface W U1 of the upper wafer W U contributes to the binding of SiO. Thus, the surface W U1 of the upper wafer W U is modified (Step S1 in FIG. 15).
  • the ion ammeter 111 measures the current value of the ion current generated by the oxygen ions irradiated on the surface W U1 of the upper wafer W U. Based on the measured current value, the irradiation amount of oxygen ions irradiated on the surface W U1 of the upper wafer W U is grasped. Then, in the control unit 300, based on the grasped irradiation amount of oxygen ions, the supply amount of oxygen gas from the gas supply pipe 130 and the pair of electrodes 141 and 142 so that the irradiation amount becomes a predetermined value. Various parameters such as the voltage between them are controlled.
  • the upper wafer W U is transferred to a surface hydrophilizing apparatus 40 of the second processing block G2 by the wafer transfer apparatus 61.
  • Surface hydrophilizing device wafer after being carried into the 40 W U is the passed suction holding the wafer transfer apparatus 61 to the spin chuck 160.
  • the pure water nozzle 173 of the standby unit 175 is moved to above the center of the upper wafer W U by the nozzle arm 171, and the scrub cleaning tool 180 is moved onto the upper wafer W U by the scrub arm 172.
  • the scrub cleaning tool 180 is moved onto the upper wafer W U by the scrub arm 172.
  • a hydroxyl group adheres to the surface W U1 of the upper wafer W U that has been modified by the surface modifying apparatus 30, and the surface W U1 is hydrophilized.
  • the surface W U1 of the upper wafer W U is cleaned by pure water from the pure water nozzle 173 and the scrub cleaning tool 180 (step S2 in FIG. 15).
  • the upper wafer W U is transferred to the bonding apparatus 41 of the second processing block G2 by the wafer transfer apparatus 61.
  • Upper wafer W U which is carried into the joining device 41 is conveyed to the position adjusting mechanism 210 by the wafer transfer body 202 via the transition 200.
  • the position adjusting mechanism 210, the horizontal orientation of the upper wafer W U is adjusted (step S3 in FIG. 15).
  • the upper wafer W U is transferred from the position adjusting mechanism 210 to the holding arm 221 of the inverting mechanism 220. Subsequently, in transfer region T1, by reversing the holding arm 221, the front and back surfaces of the upper wafer W U is inverted (step S4 in FIG. 15). That is, the surface W U1 of the upper wafer W U is directed downward. Incidentally, reversal of the front and rear surfaces of the upper wafer W U may be performed during movement of the reversing mechanism 220 to be described later.
  • the reversing mechanism 220 is moved to the upper chuck 230 side, the upper wafer W U is transferred from the inverting mechanism 220 in the upper chuck 230.
  • Upper wafer W U, the back surface W U2 is held by suction to the upper chuck 230 (step S5 in FIG. 15).
  • Upper wafer W U the process waits at the upper chuck 230 to the lower wafer W L is transported to the bonding apparatus 41 described later.
  • the processing of the lower wafer W L Following the on wafer W U is performed.
  • the lower wafer W L in the cassette C L is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 in the processing station 3.
  • Step S6 in FIG. 15 modification of the surface W L1 of the lower wafer W L in step S6 is the same as step S1 of the aforementioned.
  • step S7 hydrophilic and cleaning of the surface W L1 of the lower wafer W L in step S7, to omit the detailed description is the same as step S2 of the above-described.
  • the lower wafer W L is transported to the bonding apparatus 41 by the wafer transfer apparatus 61.
  • Lower wafer W L which is transported to the bonding unit 41 is conveyed to the position adjusting mechanism 210 by the wafer transfer body 202 via the transition 200. Then the position adjusting mechanism 210, the horizontal orientation of the lower wafer W L are adjusted (step S8 in FIG. 15).
  • the lower wafer W L is transferred to the lower chuck 231 by the wafer transfer body 202, it is attracted and held by the lower chuck 231 (step S9 in FIG. 15).
  • all of the vacuum pumps 261a actuates the 261b, all the regions 231a of the lower chuck 231, in 231b, are evacuated lower wafer W L.
  • the surface W L1 of the lower wafer W L is to face upwards, the back surface W L2 of the lower wafer W L is sucked and held by the lower chuck 231.
  • a plurality of predetermined reference points A for example, four or more reference points A are formed on the surface W L1 of the lower wafer W L , and similarly, predetermined on the surface W U1 of the upper wafer W U.
  • a plurality of, for example, four or more reference points B are formed.
  • these reference points A and B for example, predetermined patterns formed on the wafers W L and W U are used, respectively. Then, by moving the upper imaging member 253 in the horizontal direction, the surface W L1 of the lower wafer W L is imaged.
  • the lower imaging member 263 is moved in the horizontal direction, and the surface W U1 of the upper wafer W U is imaged. Thereafter, the position of the reference point A of the lower wafer W L to an upper imaging member 253 is displayed in the image captured, and the position of the reference point B of the wafer W U on the lower imaging member 263 is displayed in the image captured Consistently, the horizontal position of the lower wafer W L by the lower chuck 231 (including the horizontal direction) is adjusted. That is, the chuck drive unit 234 to move the lower chuck 231 in the horizontal direction is adjusted horizontal position of the lower wafer W L. Horizontal position of the upper wafer W U and the lower wafer W L is adjusted in this way (step S10 in FIG. 15).
  • the horizontal direction of the wafers W U and W L is adjusted by the position adjusting mechanism 210 in steps S3 and S8, but fine adjustment is performed in step S10.
  • the predetermined patterns formed on the wafers W L and W U are used as the reference points A and B.
  • other reference points can be used.
  • the outer peripheral portion and the notch portion of the wafers W L and W U can be used as the reference points.
  • the chuck drive unit 234 raises the lower chuck 231 as shown in FIG. 17, to place the lower wafer W L to a predetermined position.
  • Vertical position of the upper wafer W U and the lower wafer W L is adjusted in this way (step S11 in FIG. 15).
  • step S5 ⁇ step S11, all areas 230a of the upper chuck 230, 230b, in 230c, are evacuated upper wafer W U.
  • step S9 ⁇ step S11 all areas 231a of the lower chuck 231, in 231b, are evacuated lower wafer W L.
  • the bonding is started between the central portion of the central portion and the lower wafer W L of the upper wafer W U which pressed (thick line portion in FIG. 18). That is, since the surface W U1 of the upper wafer W U and the surface W L1 of the lower wafer W L are respectively modified in steps S1 and S6, first, van der Waals force is generated between the surfaces W U1 and W L1 , The surfaces W U1 and W L1 are joined to each other. Further, since the surface W U1 of the upper wafer W U and the surface W L1 of the lower wafer W L are hydrophilized in steps S2 and S7, respectively, hydrophilic groups between the surfaces W U1 and W L1 are hydrogen-bonded. U1 and WL1 are firmly joined to each other.
  • the pushing member 250 is raised to the upper chuck 230 as shown in FIG.
  • the suction pipe 260a in the lower chuck 231 to stop the evacuation of the lower wafer W L from 260b, stopping the suction and holding of the lower wafer W L by the lower chuck 231.
  • the upper wafer W U and the lower wafer W L overlapped wafer bonded W T is transferred to the transition unit 51 by the wafer transfer apparatus 61, then carry out by the wafer transfer apparatus 22 of the station 2 of a predetermined cassette mounting plate 11 It is conveyed to the cassette C T.
  • a series of wafers W U, bonding process of W L is completed.
  • oxygen ions generated in the plasma generation region R1 are applied to the oxygen ions generated in the plasma generation region R1.
  • predetermined energy By applying predetermined energy, only the oxygen ions can be introduced from the plasma processing region R1 into the processing region R2.
  • the surfaces W U1 and W L1 of the wafers W U and W L on the mounting table 110 can be modified using oxygen ions.
  • predetermined energy is given to the oxygen ions, when the oxygen ions reach the surfaces W U1 and W L1 of the wafers W U and W L compared to the case where plasma is used as in the prior art.
  • the impact force is extremely small. Therefore, without the wafer W U, the surface W of W L U1, W L1 is subjected to physical damage, the wafer W U, that no impaired surface flatness W U1, W L1 of W L.
  • the surfaces W U1 and W L1 can be appropriately modified without damaging the wafers W U and W L. Therefore, the wafers W U and W L can be appropriately bonded thereafter.
  • control unit 300 controls various parameters to appropriately modify the surfaces W U1 and W L1 of the wafers W U and W L. Can do.
  • the energy applied to the oxygen ions passing through the pair of electrodes 141 and 142 can be appropriately controlled by controlling the voltage applied between the pair of electrodes 141 and 142 by the control unit 300.
  • control unit 300 can control the amount of oxygen ions passing through the ion passage structure 140 based on the current value between the pair of electrodes 141 and 142 measured by the ammeter 146.
  • control unit 300 can control the irradiation amount of oxygen ions irradiated on the surfaces W U1 and W L1 of the wafers W U and W L based on the current value of the ion current measured by the ion ammeter 111.
  • the insulating material 143 that electrically insulates the pair of electrodes 141 and 142 is provided in the ion passage structure 140, a predetermined voltage can be appropriately applied between the pair of electrodes 141 and 142. it can.
  • oxygen gas is used as a processing gas for modifying the surfaces W U1 and W L1 of the wafers W U and W L , the oxygen ions themselves irradiated on the surfaces W U1 and W L1 are converted into SiO 2 double. It is possible to contribute to the modification by cutting the bond to form a single bond SiO. Therefore, the modification of the surfaces W U1 and W L1 can be performed efficiently.
  • the plasma generation mechanism of the surface modification apparatus 30 converts oxygen gas into plasma by microwaves, even when the supply amount of oxygen gas supplied to the plasma generation region R1 is small, the oxygen gas is excited to generate plasma. Can be Therefore, it is possible to efficiently generate oxygen gas plasma. Further, when the supply amount of oxygen gas is small as described above, the degree of vacuum of the plasma generation region R1 can be kept low. For this reason, it is not necessary to separate the exhaust of the plasma generation region R1 and the processing region R2, and the device configuration of the surface modification device 30 can be simplified.
  • the bonding system 1 includes, in addition to the surface modification device 30, a surface hydrophilization device 40 that hydrophilizes the surfaces W U1 and W L1 of the wafers W U and W L and cleans the surfaces W U1 and W L1. Since the bonding apparatus 41 for bonding the wafers W U and W L is also provided, the wafers W U and W L can be bonded efficiently in one system. Accordingly, the throughput of the wafer bonding process can be further improved.
  • the plasma generation mechanism converts the processing gas (oxygen gas) into plasma by microwaves, but the method of generating plasma is not limited to this, and various methods can be adopted.
  • oxygen gas may be turned into plasma using a high frequency of 13.56 MHz.
  • an electrode 400 is provided on the upper surface of the processing vessel 100 in place of the radial line slot antenna 120 (microwave oscillation device 125, coaxial waveguide 126). It is done.
  • a high frequency power source 401 is connected to the electrode 400.
  • the high frequency power source 401 is also connected to the upper electrode 141 in the ion passage structure 140.
  • description is abbreviate
  • oxygen gas is first supplied from the gas supply pipe 130 to the plasma generation region R1. Further, a high frequency voltage of 13.56 MHz, for example, is applied from the high frequency power supply 401 to the electrode 400 and the upper electrode 141. Then, an electric field is formed between the electrode 400 and the upper electrode 141, and the oxygen gas supplied into the plasma generation region R1 is converted into plasma by this electric field. Then, oxygen ions are introduced from the plasma generation region R1 to the processing region R2 via the ion passage structure 140, and the surfaces W U1 and W L1 of the wafers W U and W L are modified by the oxygen ions. Since the other steps S2 to S13 are the same as those in the above embodiment, the description thereof is omitted.
  • oxygen ions can be appropriately irradiated onto the surfaces W U1 and W L1 of the wafers W U and W L using the ion passage structure 140, so that the surfaces W U1 and W L1 are appropriately modified. can do.
  • the processing gas (oxygen gas) is supplied from the gas supply pipe 130 connected to the side surface of the processing vessel 100 to the plasma generation region R1, but the processing gas supply method Is not limited to this.
  • the processing gas may be supplied from above the plasma generation region R1.
  • a shower head for supplying a processing gas may be provided on the lower surface side of the radial line slot antenna 120 of the surface modification device 30.
  • On the lower surface of the shower head for example, a plurality of supply ports for supplying process gas are formed. Then, the processing gas is uniformly supplied from the shower head into the plasma generation region R1.
  • oxygen gas is used as the processing gas.
  • other gases such as argon gas and nitrogen gas may be used.
  • the surfaces W U1 and W L1 of the wafers W U and W L can be modified by the ions of the processing gas.
  • the case where the surfaces W U1 and W L1 of the wafers W U and W L on which the SiO 2 film is formed is modified, but the wafer W on which another film, for example, a SiN film is formed, is described.
  • U even when modifying the surface W U1, W L1 of W L can be applied to the present invention.
  • the present invention can be applied to the case where the surfaces W U1 and W L1 of the bare wafers W U and W L on which no film is formed are modified.
  • the bonded wafer W T may be heated at a predetermined temperature, for example, 400 ° C. By performing the heat treatment according to the overlapped wafer W T, it is possible to more firmly bond the bonding interface.
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de modification de surface comprenant : une chambre de traitement dans laquelle un substrat est contenu ; une partie étage disposée dans la chambre de traitement et sur laquelle le substrat est disposé ; un mécanisme d'amenée de gaz amenant un gaz de traitement dans la chambre de traitement ; et un mécanisme de production de plasma modifiant le gaz de traitement en plasma dans la chambre de traitement. L'intérieur de la chambre de traitement est divisé, par une structure perméable aux ions, en une zone de production de plasma dans laquelle le gaz de traitement est changé en plasma et en une zone de traitement dans laquelle la surface du substrat disposé sur la partie étage est modifiée au moyen d'ions du gaz de traitement produit dans la zone de production de plasma. La structure perméable aux ions est pourvue : d'une paire d'électrodes sur lesquelles une tension prédéterminée est appliquée ; et d'une partie d'ouverture à travers laquelle les ions du gaz de traitement passent de la zone de production de plasma à la zone de traitement.
PCT/JP2012/064769 2011-06-29 2012-06-08 Appareil de modification de surface, système de collage et procédé de modification de surface WO2013002012A1 (fr)

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JP2011143836A JP2013012564A (ja) 2011-06-29 2011-06-29 表面改質装置、接合システム、表面改質方法、プログラム及びコンピュータ記憶媒体
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JP5538613B1 (ja) * 2013-11-13 2014-07-02 東京エレクトロン株式会社 接合装置及び接合システム
JP6813816B2 (ja) * 2018-04-05 2021-01-13 東京エレクトロン株式会社 接合システムおよび接合方法

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JP2006339363A (ja) * 2005-06-01 2006-12-14 Bondtech Inc 表面活性化方法および表面活性化装置
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JP2005079353A (ja) * 2003-08-29 2005-03-24 Tadatomo Suga 基板接合方法、照射方法、および基板接合装置
JP2006269854A (ja) * 2005-03-25 2006-10-05 Tokyo Electron Ltd 被処理基板の除電方法，基板処理装置，プログラム
JP2006339363A (ja) * 2005-06-01 2006-12-14 Bondtech Inc 表面活性化方法および表面活性化装置
JP2011035232A (ja) * 2009-08-04 2011-02-17 Shibaura Mechatronics Corp プラズマ処理装置及びプラズマ処理方法

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US9985837B2 (en) 2015-07-23 2018-05-29 Cisco Technology, Inc. Refresh of the binding tables between data-link-layer and network-layer addresses on mobility in a data center environment
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