WO2011142499A1 - Appareil de traitement à haute pression cylindrique - Google Patents

Appareil de traitement à haute pression cylindrique Download PDF

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Publication number
WO2011142499A1
WO2011142499A1 PCT/KR2010/004538 KR2010004538W WO2011142499A1 WO 2011142499 A1 WO2011142499 A1 WO 2011142499A1 KR 2010004538 W KR2010004538 W KR 2010004538W WO 2011142499 A1 WO2011142499 A1 WO 2011142499A1
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WO
WIPO (PCT)
Prior art keywords
chamber
inner chamber
high pressure
cylindrical
outer chamber
Prior art date
Application number
PCT/KR2010/004538
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English (en)
Korean (ko)
Inventor
유기풍
이철수
한갑수
Original Assignee
서강대학교 산학협력단
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Filing date
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Application filed by 서강대학교 산학협력단 filed Critical 서강대학교 산학협력단
Publication of WO2011142499A1 publication Critical patent/WO2011142499A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Definitions

  • the present invention relates to a cylindrical autoclave, and more particularly, to a cylindrical autoclave capable of preventing leakage of internal pressure and preventing concentration of pressure.
  • the high pressure processor is a device used for supercritical dry cleaning and drying using carbon dioxide, and the internal pressure is about 300 bar maximum. Therefore, a structure capable of maintaining such a high pressure is required.
  • the conventional high pressure processor was not easy to maintain and seal such a high pressure, and in particular, the conventional high pressure processor having a structure for inserting a gate valve into the chamber, that is, a structure having a door for opening and closing the chamber increases the size of the device and increases the processing cost. There was a lot of trouble.
  • the problem to be solved by the present invention in view of the above problems is to provide a cylindrical high-pressure processor that can have a completely cylindrical structure of the processing chamber space.
  • another object of the present invention is to provide a cylindrical autoclave capable of increasing the number of wafers that can be autoclaved at the same time in a relatively small space.
  • Another problem to be solved by the present invention is to provide a cylindrical high-pressure processor that can increase the safety and improve the reliability of the leakage prevention.
  • Another object of the present invention is to provide a cylindrical high-pressure processor for supplying sufficient heat without a separate heating means to be attached to the high pressure treatment.
  • Another problem to be solved by the present invention is to provide a cylindrical high-pressure processor that can facilitate the mixing of high-pressure fluid and improve the heat transfer efficiency.
  • the present invention for solving the above problems, the upper and lower opening and closing, the inner chamber to provide a cylindrical processing space portion, and while the inner chamber is in a closed state to firmly support the airtight state of the inner chamber, the outside of the left and right opening A chamber, an inner chamber driving part for opening and closing the inner chamber up and down, an outer chamber driving part for opening and closing the outer chamber left and right, and a support frame for fixing the inner chamber driving part, the outer chamber driving part, and one side of the inner chamber; do.
  • Cylindrical high pressure processor of the present invention configured as described above is configured by dividing the chamber into an upper part and a lower part without using a door that opens and closes the chamber itself, and moves the upper chamber or the lower chamber to open or close the process chamber.
  • the inner space of the processing chamber in which the high pressure treatment is performed can be provided as a completely cylindrical space, thereby preventing the high pressure from being concentrated at a specific position, thereby improving leakage preventing characteristics and preventing shortening of the life of the device and safety. There is an effect to improve.
  • cylindrical high pressure processor of the present invention further includes an external chamber that supports and seals the chamber from the outside, thereby further improving safety.
  • the cylindrical high pressure processor of the present invention is a structure in which the number of wafers that can be processed is determined according to the height of a chamber providing the cylindrical processing space, and simultaneously processes relatively more wafers while securing safety and process stability. Since this is possible, there exists an effect which can improve productivity.
  • the cylindrical high pressure processor of the present invention inserts a heater directly into a wall of the chamber to supply heat required for high pressure treatment, and mixes a high pressure fluid in the chamber using a mixing material to heat the outside of the chamber.
  • the heat transfer efficiency is excellent, and thus the energy used can be reduced, and the size of the device can be further reduced.
  • 1 to 3 are closed state perspective views, open state perspective views, and bottom side perspective views of the cylindrical high pressure processor according to the preferred embodiment of the present invention, respectively.
  • Figure 4 is a cross-sectional configuration of the A-A direction in Figure 2
  • Figure 5 is a cross-sectional configuration of the B-B direction in FIG.
  • FIG. 6 is a partial cross-sectional view of the upper inner chamber according to a preferred embodiment of the present invention.
  • FIG 7 and 8 are partial cross-sectional view of the upper inner chamber according to another embodiment of the present invention, respectively.
  • FIG. 9 is a configuration diagram of another embodiment of the upper inner chamber.
  • FIG. 10 is a block diagram of a cylindrical high pressure treatment apparatus according to another embodiment of the present invention.
  • FIG. 11 is a detailed configuration diagram of FIG. 11.
  • connection 130 outer chamber drive
  • Feed groove 150 Mixed drive shaft
  • outer chamber 210 first outer chamber
  • 1 to 3 are closed state perspective views, open state perspective views, and bottom side perspective views of the cylindrical high pressure processor according to the preferred embodiment of the present invention, respectively.
  • the cylindrical high pressure processor according to a preferred embodiment of the present invention, the support frame 100 and at least one side is open, the outer chamber driving portion accommodated inside the support frame 100
  • Receiving the driving force of the 310 through the connecting portion 120 includes a first outer chamber 210 and the second receiving chamber 220 which is driven left and right along the transfer guide 110 and the transfer groove 140, respectively
  • the inner chamber 200 and the inner chamber which is positioned inside the outer chamber 200 to provide a cylindrical processing space therein, and is opened and closed by the inner chamber driving part 330 located above the support frame 100. And 300.
  • the inner chamber 300 is fixed to a bottom surface of the upper inner chamber 310 and the support frame 100 to move up and down by the drive of the inner chamber driving unit 330 to mount a plurality of wafers 400
  • the wafer support part 340 is configured to include a lower inner chamber 320 provided therein.
  • the support frame 100 may include a top plate, a bottom plate, and a side plate connecting the top plate and the bottom plate, respectively, and may have a structure in which one side portion is opened for loading and unloading the wafer 400.
  • the side portion facing the open side portion is also preferably an open form. This is advantageous for the maintenance of the device and the supply of process fluids.
  • the support frame 100 as described above supports and guides each component, and may have various modified embodiments in addition to the configuration shown in the drawings. For example, depending on the installation space, only the top plate and the bottom plate may be used without using the top plate, the bottom plate and the side plate of the interconnected structure.
  • the upper surface of the lower plate of the support frame 100 is provided with a transfer guide 110 for stably linearly moving the first outer chamber 210 and the second outer chamber 220 constituting the outer chamber 200, respectively.
  • the transfer guide 110 may use a known rail such as an LM guide.
  • the lower plate of the support frame 100 is provided with a conveying groove 140, the first outer chamber 210 and the second outer chamber 220 by the action of the outer chamber driving unit 130 fixed to the bottom of the lower plate
  • the connecting portion 120 connecting the drive shaft of the first outer chamber 210 and the outer chamber driving unit 130, the drive shaft of the second outer chamber 220 and the driving unit 130 can be moved so that each can move linearly. Provide space.
  • the shape of the first outer chamber 210 and the second outer chamber 220 has a frame structure in which both sides are open so that a part of the inner chamber 300 is exposed to both sides in contact with each other. It is a structure that can reduce the weight and reduce the volume of the device while performing the function of the outer chamber 200 to be described.
  • the inner chamber 300 positioned inside the first outer chamber 210 and the second outer chamber 220 includes an upper inner chamber 310 and a lower inner chamber 320.
  • the upper inner chamber 310 is moved up and down by the inner chamber driving part 330 fixed to the upper plate of the support frame 100, the lower inner chamber 320 is fixed on the lower plate of the support frame 100 have.
  • the lower inner chamber 320 is fixed and the upper inner chamber 310 is moved up and down for the purpose of describing one preferred embodiment.
  • the lower inner chamber 320 is movable up and down.
  • the upper inner chamber 310 may be fixed, or the lower inner chamber 320 and the upper inner chamber 310 may move up and down.
  • the lower inner chamber 320 and the upper inner chamber 310 has a cylindrical shape, and since the separate door is not installed, the internal high pressure treatment space also has a completely cylindrical structure.
  • This cylindrical high pressure treatment space is a structure that can prevent the partial concentration of pressure to prevent leakage and shorten the life of the device.
  • the lower inner chamber 320 is provided with a wafer support 340 for fixing a plurality of wafers 400, the upper inner chamber 310 is moved upward, the first outer chamber 210 and the first The plurality of wafers 400 are loaded or unloaded to the wafer support 340 in the state in which the outer chamber 220 is opened.
  • the lower inner chamber 320 is provided with a mixing drive shaft 150 penetrating from the bottom to the inside, an exhaust nozzle 160 for discharging the process fluid therein is provided through the mixing drive shaft 150, Although not shown in FIGS. 1 to 3, a supply nozzle to be described in detail later may be installed.
  • the present invention is configured by including an upper inner chamber 310 and a lower inner chamber 320 which are separated from each other up and down by providing an inner chamber 300 providing a high pressure treatment space without installing a separate door. It is easy to provide a cylindrical high pressure treatment space.
  • Figure 4 is a cross-sectional configuration of the A-A direction in Figure 2
  • Figure 5 is a cross-sectional configuration of the B-B direction in FIG.
  • the cylindrical high pressure treatment apparatus according to the preferred embodiment of the present invention, the configuration of the upper inner chamber 310 of the disk-shaped moving block is moved up and down by the inner chamber drive unit 330 311 and the moving block 311 is configured as a cylindrical retaining block 312 extending downwardly coupled to the state that the play is present.
  • the holding block 312 is configured so that the main supply nozzle 350 is penetrated to supply the process fluid from the outside.
  • a supply nozzle 170 for supplying a process fluid from a bottom surface side of the lower inner chamber 320 may be provided to supply a process fluid more efficiently.
  • the process fluid supplied through the main supply nozzle 350 and the supply nozzle 170 may supply the process fluid from the upper and lower sides of the wafer 400 or support the wafer 400.
  • a method capable of supplying the upper portion of the wafer 400 through the supply path provided in the present invention may be used, but the present invention is not limited by the difference in the supply method.
  • An impeller 360 is provided at the upper end of the mixing drive shaft 150 to mix the process fluid supplied according to the rotation of the rotating shaft in the mixing drive shaft 150 so that a more uniform high pressure treatment can be achieved.
  • the mechanically driven impeller 360 is an example of a mixing means.
  • an circulating mixing is performed using an external circulation pump, or an ultrasonic wave device is used to give a strong vibration, or It is possible to use a mixed substrate having a structure in which the process fluid is flowed by rapidly adjusting the pressure.
  • the exhaust nozzle 160 connected to the mixing drive shaft 150 In addition, in order to unload the wafer 400 which has been subjected to the high pressure treatment, it is necessary to discharge the process fluid, and for this purpose, it is discharged through the exhaust nozzle 160 connected to the mixing drive shaft 150.
  • the exhaust nozzle 160 connected to the mixing drive shaft 150 is illustrated and described, a structure in which the exhaust nozzle 160 is directly connected to the inner chamber 300 may also be used.
  • the process fluid supplied into the inner chamber 300 through the main supply nozzle 350 and the supply nozzle 170 is an inner chamber 300 which is a cylindrical space so that the pressure can rise to the process pressure. Leakage should be prevented in the In order to maintain the high pressure used in such a high pressure treatment, the present invention uses a structure divided into the moving block 311 and the holding block 312 described above the structure of the upper inner chamber 310, Referring to the leakage preventing action of the structure of the upper inner chamber 310 is as follows.
  • FIG. 6 is a partial cross-sectional view of the upper inner chamber 310 according to the preferred embodiment of the present invention.
  • the retaining block 312 has a structure in which the side plate 312b and the top plate 312a are coupled to each other so that the movable block 311 having a protruding portion 311a protruding from the side thereof can be inserted therein. There is a play between the moving block 311 and the holding block 312.
  • a peak bushing is inserted between the movable block 311 and the retaining block 312 to prevent friction due to a minute gap between the movable block 311 and the retaining block 312.
  • a sealing member 316 is provided between the upper plate 312a and the side plate 312b constituting the holding block 312 to prevent leakage, and the moving block 311 has a pressure in the processing space D. As it increases, the upward pressure increases.
  • the upper surface of the protrusion 311a protruding from the outer diameter of the moving block 311 by moving upward due to the increase in pressure thereof is in contact with the bottom surface of the upper plate 312a of the retaining block 312.
  • the sealing member 315 is provided on the upper portion of the protrusion 311a so that the airtightness can be maintained between the upper plate 312a.
  • the inner diameter of the upper plate 312a is narrower than the inner diameter of the side plate 312b, and the inner diameter of the portion forming the processing space portion D of the side plate 312b is inserted into the moving block 311. It is smaller than the inner diameter of the portion for, and between the portions having a difference in the inner diameter has a structure in which the inner diameter forms an inclined surface (C) having a predetermined inclination angle ( ⁇ ).
  • the retaining block 312 is in close contact with the lower inner chamber 320 of the lower side, and acts so that no leakage occurs between the moving block 311 is subjected to upward pressure due to the internal pressure. It is also in close contact with the excess to further prevent the leakage of pressure.
  • Multiple sealing members 314 are also provided at portions in contact with the lower inner chamber 320 of the retaining block 312.
  • the wafers 400 are processed in a state where a high pressure atmosphere is maintained.
  • the process may be cleaning and drying of semiconductors, MEMS, displays, precision parts, and solar cells.
  • the object to be processed such as the processed wafer 400 is moved by moving the upper inner chamber 310 of the inner chamber 300 upward.
  • FIG. 7 and 8 are different embodiments of FIG. 6, respectively, and the other functions are the same as those in FIG. 6, but the sealing members 315 and 314 are replaced with energized seals 317 and 318, respectively.
  • Each of the energized seals 317 and 318 may be installed on the side of the contact surface differently from the sealing members such as O-rings, and thus may seal more stable sealing properties.
  • a plurality of rod heaters 370 are inserted into the upper inner chamber 310, and a wiring for supplying power to the rod heaters 370 is provided on an upper surface of the upper inner chamber 310.
  • a wiring groove 371 is provided.
  • the rod heater 370 has a length of the rod heater 370 inserted into the movable block 311 and the retaining block 312 of the upper inner chamber 310 is different, the action of the rod heater 370 This enables heating to an appropriate temperature for high pressure treatment without using a separate external heating means.
  • a jacket-type heater may be further installed on the outer circumferential surface of the retaining block 312.
  • FIG. 10 is a configuration diagram of a cylindrical high pressure treatment apparatus according to another embodiment of the present invention
  • FIG. 11 is a detailed configuration diagram of FIG. 10.
  • the cylindrical high pressure treatment apparatus according to another embodiment of the present invention, the connecting portion 120 for transmitting the driving force of the outer chamber driving unit 130 to the outer chamber 200 is the outer chamber driving unit ( An insertion groove 121 into which the shaft of 130 is inserted is provided.
  • the insertion groove 121 is provided to extend in the vertical direction, and thus the outer chamber 200 is able to move up and down from the shaft of the outer chamber driving unit 130.
  • the guide 221 is fixed to the first outer chamber 210 or the second outer chamber 220 of the outer chamber 200 by engaging the transfer guide 110 so that the outer chamber 200 can be linearly moved.
  • the fluid connection plate 224 is provided.
  • the flow connecting plate 224 is coupled to the first outer chamber 210 or the second outer chamber 220 by a bushing 223, and thus the first outer chamber 210 or the second outer chamber 220. ) May be vertically displaced in a state in which the guide 221 is fixed so that vertical displacement does not occur.
  • the space into which the inner chamber 300 of the first outer chamber 210 and the second outer chamber 220 is inserted is slightly smaller than the outer shape of the inner chamber 300 in order to prevent interference with the inner chamber 300. It can be made larger to have a margin.
  • the outer chamber 200 also acts as a flow connecting plate 224 connected by the insertion groove 121 and the bushing 223 described above so that the lower portion of the outer chamber 200 is in contact with the lower side of the inner chamber 300. No longer moving upwards.
  • This invention improves the sealing property of a high pressure processor, and there exists industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de traitement à haute pression cylindrique, qui comporte une chambre intérieure qui s'ouvre et se ferme verticalement en vue de former une partie d'espace de traitement cylindrique, une chambre extérieure qui s'ouvre et se ferme latéralement de façon à garantir que la chambre intérieure soit étanche à l'air lorsqu'elle est fermée, une unité d'entraînement de chambre intérieure permettant d'ouvrir et de fermer la chambre intérieure verticalement, une unité d'entraînement de chambre extérieure permettant d'ouvrir et de fermer la chambre extérieure latéralement, et un châssis de support qui fixe et supporte un côté de la chambre intérieure, l'unité d'entraînement de chambre intérieure et l'unité d'entraînement de chambre extérieure. L'appareil de traitement à haute pression cylindrique de la présente invention n'a pas recours à une porte pour ouvrir et fermer la chambre mais divise plutôt la chambre en parties supérieure et inférieure et déplace les chambres supérieure et inférieure pour ouvrir ou fermer hermétiquement la chambre de traitement. L'espace intérieur de la chambre de traitement dans lequel est réalisé le traitement à haute pression peut donc être façonné en une forme parfaitement cylindrique. Eviter que la haute pression ne soit concentrée en un emplacement spécifique permet par conséquent d'améliorer les propriétés de protection contre les fuites de l'appareil, d'empêcher une réduction de sa durée de vie et d'accroître sa sécurité.
PCT/KR2010/004538 2010-05-10 2010-07-13 Appareil de traitement à haute pression cylindrique WO2011142499A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100043660A KR101133017B1 (ko) 2010-05-10 2010-05-10 원통형 고압처리기
KR10-2010-0043660 2010-05-10

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WO2011142499A1 true WO2011142499A1 (fr) 2011-11-17

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PCT/KR2010/004538 WO2011142499A1 (fr) 2010-05-10 2010-07-13 Appareil de traitement à haute pression cylindrique

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010022111A (ko) * 1997-07-21 2001-03-15 세미툴 인코포레이티드 작업편 처리 시스템용 구동 조립체
JP2003318152A (ja) * 2002-04-24 2003-11-07 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR20050019129A (ko) * 2002-06-13 2005-02-28 비오씨 에드워즈 인코포레이티드 기판 처리 장치 및 기판 처리 방법
JP2005079220A (ja) * 2003-08-29 2005-03-24 Tokyo Electron Ltd 基板処理装置
JP2005509280A (ja) * 2001-10-03 2005-04-07 東京エレクトロン株式会社 複数の半導体基板の高圧加工用チャンバ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010022111A (ko) * 1997-07-21 2001-03-15 세미툴 인코포레이티드 작업편 처리 시스템용 구동 조립체
JP2005509280A (ja) * 2001-10-03 2005-04-07 東京エレクトロン株式会社 複数の半導体基板の高圧加工用チャンバ
JP2003318152A (ja) * 2002-04-24 2003-11-07 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR20050019129A (ko) * 2002-06-13 2005-02-28 비오씨 에드워즈 인코포레이티드 기판 처리 장치 및 기판 처리 방법
JP2005079220A (ja) * 2003-08-29 2005-03-24 Tokyo Electron Ltd 基板処理装置

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Publication number Publication date
KR20110124079A (ko) 2011-11-16
KR101133017B1 (ko) 2012-04-09

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