WO2011142499A1 - Cylindrical high-pressure treatment apparatus - Google Patents
Cylindrical high-pressure treatment apparatus Download PDFInfo
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- WO2011142499A1 WO2011142499A1 PCT/KR2010/004538 KR2010004538W WO2011142499A1 WO 2011142499 A1 WO2011142499 A1 WO 2011142499A1 KR 2010004538 W KR2010004538 W KR 2010004538W WO 2011142499 A1 WO2011142499 A1 WO 2011142499A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
Definitions
- the present invention relates to a cylindrical autoclave, and more particularly, to a cylindrical autoclave capable of preventing leakage of internal pressure and preventing concentration of pressure.
- the high pressure processor is a device used for supercritical dry cleaning and drying using carbon dioxide, and the internal pressure is about 300 bar maximum. Therefore, a structure capable of maintaining such a high pressure is required.
- the conventional high pressure processor was not easy to maintain and seal such a high pressure, and in particular, the conventional high pressure processor having a structure for inserting a gate valve into the chamber, that is, a structure having a door for opening and closing the chamber increases the size of the device and increases the processing cost. There was a lot of trouble.
- the problem to be solved by the present invention in view of the above problems is to provide a cylindrical high-pressure processor that can have a completely cylindrical structure of the processing chamber space.
- another object of the present invention is to provide a cylindrical autoclave capable of increasing the number of wafers that can be autoclaved at the same time in a relatively small space.
- Another problem to be solved by the present invention is to provide a cylindrical high-pressure processor that can increase the safety and improve the reliability of the leakage prevention.
- Another object of the present invention is to provide a cylindrical high-pressure processor for supplying sufficient heat without a separate heating means to be attached to the high pressure treatment.
- Another problem to be solved by the present invention is to provide a cylindrical high-pressure processor that can facilitate the mixing of high-pressure fluid and improve the heat transfer efficiency.
- the present invention for solving the above problems, the upper and lower opening and closing, the inner chamber to provide a cylindrical processing space portion, and while the inner chamber is in a closed state to firmly support the airtight state of the inner chamber, the outside of the left and right opening A chamber, an inner chamber driving part for opening and closing the inner chamber up and down, an outer chamber driving part for opening and closing the outer chamber left and right, and a support frame for fixing the inner chamber driving part, the outer chamber driving part, and one side of the inner chamber; do.
- Cylindrical high pressure processor of the present invention configured as described above is configured by dividing the chamber into an upper part and a lower part without using a door that opens and closes the chamber itself, and moves the upper chamber or the lower chamber to open or close the process chamber.
- the inner space of the processing chamber in which the high pressure treatment is performed can be provided as a completely cylindrical space, thereby preventing the high pressure from being concentrated at a specific position, thereby improving leakage preventing characteristics and preventing shortening of the life of the device and safety. There is an effect to improve.
- cylindrical high pressure processor of the present invention further includes an external chamber that supports and seals the chamber from the outside, thereby further improving safety.
- the cylindrical high pressure processor of the present invention is a structure in which the number of wafers that can be processed is determined according to the height of a chamber providing the cylindrical processing space, and simultaneously processes relatively more wafers while securing safety and process stability. Since this is possible, there exists an effect which can improve productivity.
- the cylindrical high pressure processor of the present invention inserts a heater directly into a wall of the chamber to supply heat required for high pressure treatment, and mixes a high pressure fluid in the chamber using a mixing material to heat the outside of the chamber.
- the heat transfer efficiency is excellent, and thus the energy used can be reduced, and the size of the device can be further reduced.
- 1 to 3 are closed state perspective views, open state perspective views, and bottom side perspective views of the cylindrical high pressure processor according to the preferred embodiment of the present invention, respectively.
- Figure 4 is a cross-sectional configuration of the A-A direction in Figure 2
- Figure 5 is a cross-sectional configuration of the B-B direction in FIG.
- FIG. 6 is a partial cross-sectional view of the upper inner chamber according to a preferred embodiment of the present invention.
- FIG 7 and 8 are partial cross-sectional view of the upper inner chamber according to another embodiment of the present invention, respectively.
- FIG. 9 is a configuration diagram of another embodiment of the upper inner chamber.
- FIG. 10 is a block diagram of a cylindrical high pressure treatment apparatus according to another embodiment of the present invention.
- FIG. 11 is a detailed configuration diagram of FIG. 11.
- connection 130 outer chamber drive
- Feed groove 150 Mixed drive shaft
- outer chamber 210 first outer chamber
- 1 to 3 are closed state perspective views, open state perspective views, and bottom side perspective views of the cylindrical high pressure processor according to the preferred embodiment of the present invention, respectively.
- the cylindrical high pressure processor according to a preferred embodiment of the present invention, the support frame 100 and at least one side is open, the outer chamber driving portion accommodated inside the support frame 100
- Receiving the driving force of the 310 through the connecting portion 120 includes a first outer chamber 210 and the second receiving chamber 220 which is driven left and right along the transfer guide 110 and the transfer groove 140, respectively
- the inner chamber 200 and the inner chamber which is positioned inside the outer chamber 200 to provide a cylindrical processing space therein, and is opened and closed by the inner chamber driving part 330 located above the support frame 100. And 300.
- the inner chamber 300 is fixed to a bottom surface of the upper inner chamber 310 and the support frame 100 to move up and down by the drive of the inner chamber driving unit 330 to mount a plurality of wafers 400
- the wafer support part 340 is configured to include a lower inner chamber 320 provided therein.
- the support frame 100 may include a top plate, a bottom plate, and a side plate connecting the top plate and the bottom plate, respectively, and may have a structure in which one side portion is opened for loading and unloading the wafer 400.
- the side portion facing the open side portion is also preferably an open form. This is advantageous for the maintenance of the device and the supply of process fluids.
- the support frame 100 as described above supports and guides each component, and may have various modified embodiments in addition to the configuration shown in the drawings. For example, depending on the installation space, only the top plate and the bottom plate may be used without using the top plate, the bottom plate and the side plate of the interconnected structure.
- the upper surface of the lower plate of the support frame 100 is provided with a transfer guide 110 for stably linearly moving the first outer chamber 210 and the second outer chamber 220 constituting the outer chamber 200, respectively.
- the transfer guide 110 may use a known rail such as an LM guide.
- the lower plate of the support frame 100 is provided with a conveying groove 140, the first outer chamber 210 and the second outer chamber 220 by the action of the outer chamber driving unit 130 fixed to the bottom of the lower plate
- the connecting portion 120 connecting the drive shaft of the first outer chamber 210 and the outer chamber driving unit 130, the drive shaft of the second outer chamber 220 and the driving unit 130 can be moved so that each can move linearly. Provide space.
- the shape of the first outer chamber 210 and the second outer chamber 220 has a frame structure in which both sides are open so that a part of the inner chamber 300 is exposed to both sides in contact with each other. It is a structure that can reduce the weight and reduce the volume of the device while performing the function of the outer chamber 200 to be described.
- the inner chamber 300 positioned inside the first outer chamber 210 and the second outer chamber 220 includes an upper inner chamber 310 and a lower inner chamber 320.
- the upper inner chamber 310 is moved up and down by the inner chamber driving part 330 fixed to the upper plate of the support frame 100, the lower inner chamber 320 is fixed on the lower plate of the support frame 100 have.
- the lower inner chamber 320 is fixed and the upper inner chamber 310 is moved up and down for the purpose of describing one preferred embodiment.
- the lower inner chamber 320 is movable up and down.
- the upper inner chamber 310 may be fixed, or the lower inner chamber 320 and the upper inner chamber 310 may move up and down.
- the lower inner chamber 320 and the upper inner chamber 310 has a cylindrical shape, and since the separate door is not installed, the internal high pressure treatment space also has a completely cylindrical structure.
- This cylindrical high pressure treatment space is a structure that can prevent the partial concentration of pressure to prevent leakage and shorten the life of the device.
- the lower inner chamber 320 is provided with a wafer support 340 for fixing a plurality of wafers 400, the upper inner chamber 310 is moved upward, the first outer chamber 210 and the first The plurality of wafers 400 are loaded or unloaded to the wafer support 340 in the state in which the outer chamber 220 is opened.
- the lower inner chamber 320 is provided with a mixing drive shaft 150 penetrating from the bottom to the inside, an exhaust nozzle 160 for discharging the process fluid therein is provided through the mixing drive shaft 150, Although not shown in FIGS. 1 to 3, a supply nozzle to be described in detail later may be installed.
- the present invention is configured by including an upper inner chamber 310 and a lower inner chamber 320 which are separated from each other up and down by providing an inner chamber 300 providing a high pressure treatment space without installing a separate door. It is easy to provide a cylindrical high pressure treatment space.
- Figure 4 is a cross-sectional configuration of the A-A direction in Figure 2
- Figure 5 is a cross-sectional configuration of the B-B direction in FIG.
- the cylindrical high pressure treatment apparatus according to the preferred embodiment of the present invention, the configuration of the upper inner chamber 310 of the disk-shaped moving block is moved up and down by the inner chamber drive unit 330 311 and the moving block 311 is configured as a cylindrical retaining block 312 extending downwardly coupled to the state that the play is present.
- the holding block 312 is configured so that the main supply nozzle 350 is penetrated to supply the process fluid from the outside.
- a supply nozzle 170 for supplying a process fluid from a bottom surface side of the lower inner chamber 320 may be provided to supply a process fluid more efficiently.
- the process fluid supplied through the main supply nozzle 350 and the supply nozzle 170 may supply the process fluid from the upper and lower sides of the wafer 400 or support the wafer 400.
- a method capable of supplying the upper portion of the wafer 400 through the supply path provided in the present invention may be used, but the present invention is not limited by the difference in the supply method.
- An impeller 360 is provided at the upper end of the mixing drive shaft 150 to mix the process fluid supplied according to the rotation of the rotating shaft in the mixing drive shaft 150 so that a more uniform high pressure treatment can be achieved.
- the mechanically driven impeller 360 is an example of a mixing means.
- an circulating mixing is performed using an external circulation pump, or an ultrasonic wave device is used to give a strong vibration, or It is possible to use a mixed substrate having a structure in which the process fluid is flowed by rapidly adjusting the pressure.
- the exhaust nozzle 160 connected to the mixing drive shaft 150 In addition, in order to unload the wafer 400 which has been subjected to the high pressure treatment, it is necessary to discharge the process fluid, and for this purpose, it is discharged through the exhaust nozzle 160 connected to the mixing drive shaft 150.
- the exhaust nozzle 160 connected to the mixing drive shaft 150 is illustrated and described, a structure in which the exhaust nozzle 160 is directly connected to the inner chamber 300 may also be used.
- the process fluid supplied into the inner chamber 300 through the main supply nozzle 350 and the supply nozzle 170 is an inner chamber 300 which is a cylindrical space so that the pressure can rise to the process pressure. Leakage should be prevented in the In order to maintain the high pressure used in such a high pressure treatment, the present invention uses a structure divided into the moving block 311 and the holding block 312 described above the structure of the upper inner chamber 310, Referring to the leakage preventing action of the structure of the upper inner chamber 310 is as follows.
- FIG. 6 is a partial cross-sectional view of the upper inner chamber 310 according to the preferred embodiment of the present invention.
- the retaining block 312 has a structure in which the side plate 312b and the top plate 312a are coupled to each other so that the movable block 311 having a protruding portion 311a protruding from the side thereof can be inserted therein. There is a play between the moving block 311 and the holding block 312.
- a peak bushing is inserted between the movable block 311 and the retaining block 312 to prevent friction due to a minute gap between the movable block 311 and the retaining block 312.
- a sealing member 316 is provided between the upper plate 312a and the side plate 312b constituting the holding block 312 to prevent leakage, and the moving block 311 has a pressure in the processing space D. As it increases, the upward pressure increases.
- the upper surface of the protrusion 311a protruding from the outer diameter of the moving block 311 by moving upward due to the increase in pressure thereof is in contact with the bottom surface of the upper plate 312a of the retaining block 312.
- the sealing member 315 is provided on the upper portion of the protrusion 311a so that the airtightness can be maintained between the upper plate 312a.
- the inner diameter of the upper plate 312a is narrower than the inner diameter of the side plate 312b, and the inner diameter of the portion forming the processing space portion D of the side plate 312b is inserted into the moving block 311. It is smaller than the inner diameter of the portion for, and between the portions having a difference in the inner diameter has a structure in which the inner diameter forms an inclined surface (C) having a predetermined inclination angle ( ⁇ ).
- the retaining block 312 is in close contact with the lower inner chamber 320 of the lower side, and acts so that no leakage occurs between the moving block 311 is subjected to upward pressure due to the internal pressure. It is also in close contact with the excess to further prevent the leakage of pressure.
- Multiple sealing members 314 are also provided at portions in contact with the lower inner chamber 320 of the retaining block 312.
- the wafers 400 are processed in a state where a high pressure atmosphere is maintained.
- the process may be cleaning and drying of semiconductors, MEMS, displays, precision parts, and solar cells.
- the object to be processed such as the processed wafer 400 is moved by moving the upper inner chamber 310 of the inner chamber 300 upward.
- FIG. 7 and 8 are different embodiments of FIG. 6, respectively, and the other functions are the same as those in FIG. 6, but the sealing members 315 and 314 are replaced with energized seals 317 and 318, respectively.
- Each of the energized seals 317 and 318 may be installed on the side of the contact surface differently from the sealing members such as O-rings, and thus may seal more stable sealing properties.
- a plurality of rod heaters 370 are inserted into the upper inner chamber 310, and a wiring for supplying power to the rod heaters 370 is provided on an upper surface of the upper inner chamber 310.
- a wiring groove 371 is provided.
- the rod heater 370 has a length of the rod heater 370 inserted into the movable block 311 and the retaining block 312 of the upper inner chamber 310 is different, the action of the rod heater 370 This enables heating to an appropriate temperature for high pressure treatment without using a separate external heating means.
- a jacket-type heater may be further installed on the outer circumferential surface of the retaining block 312.
- FIG. 10 is a configuration diagram of a cylindrical high pressure treatment apparatus according to another embodiment of the present invention
- FIG. 11 is a detailed configuration diagram of FIG. 10.
- the cylindrical high pressure treatment apparatus according to another embodiment of the present invention, the connecting portion 120 for transmitting the driving force of the outer chamber driving unit 130 to the outer chamber 200 is the outer chamber driving unit ( An insertion groove 121 into which the shaft of 130 is inserted is provided.
- the insertion groove 121 is provided to extend in the vertical direction, and thus the outer chamber 200 is able to move up and down from the shaft of the outer chamber driving unit 130.
- the guide 221 is fixed to the first outer chamber 210 or the second outer chamber 220 of the outer chamber 200 by engaging the transfer guide 110 so that the outer chamber 200 can be linearly moved.
- the fluid connection plate 224 is provided.
- the flow connecting plate 224 is coupled to the first outer chamber 210 or the second outer chamber 220 by a bushing 223, and thus the first outer chamber 210 or the second outer chamber 220. ) May be vertically displaced in a state in which the guide 221 is fixed so that vertical displacement does not occur.
- the space into which the inner chamber 300 of the first outer chamber 210 and the second outer chamber 220 is inserted is slightly smaller than the outer shape of the inner chamber 300 in order to prevent interference with the inner chamber 300. It can be made larger to have a margin.
- the outer chamber 200 also acts as a flow connecting plate 224 connected by the insertion groove 121 and the bushing 223 described above so that the lower portion of the outer chamber 200 is in contact with the lower side of the inner chamber 300. No longer moving upwards.
- This invention improves the sealing property of a high pressure processor, and there exists industrial applicability.
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Abstract
The present invention relates to a cylindrical high-pressure treatment apparatus, including an inner chamber which opens and closes vertically so as to provide a cylindrical treatment-space portion, an outer chamber which opens and closes laterally so as to ensure that the inner chamber is airtight when closed, an inner-chamber-driving unit for opening and closing the inner chamber vertically, an outer-chamber-driving unit for opening and closing the outer chamber laterally, and a supporting frame which fixes and supports one side of the inner chamber, the inner-chamber-driving unit, and the outer-chamber-driving unit. The cylindrical high-pressure treatment apparatus of the present invention does not use a door to open and close the chamber, but rather divides the chamber into upper and lower portions and moves the upper and lower chambers so as to open or seal the treatment chamber. Thus, the inner space of the treatment chamber, in which high-pressure treatment is performed, can be formed into a perfectly cylindrical shape. Therefore, by preventing high pressure from being concentrated at a specific location, the leakage prevention properties of the apparatus may be improved, a reduction in the service life of the apparatus may be prevented, and the safety of the apparatus may be improved.
Description
본 발명은 원통형 고압처리기에 관한 것으로, 보다 상세하게는 내부 압력의 누설을 방지하고 압력의 집중 현상을 방지할 수 있는 원통형 고압처리기에 관한 것이다.The present invention relates to a cylindrical autoclave, and more particularly, to a cylindrical autoclave capable of preventing leakage of internal pressure and preventing concentration of pressure.
일반적으로, 고압 처리기는 이산화탄소를 사용하는 초임계 건식세정 및 건조에 사용되는 장치이며, 내부의 압력이 최대 300bar 정도가 된다. 따라서 이와 같은 고압을 유지할 수 있는 구조가 요구된다.In general, the high pressure processor is a device used for supercritical dry cleaning and drying using carbon dioxide, and the internal pressure is about 300 bar maximum. Therefore, a structure capable of maintaining such a high pressure is required.
종래 고압 처리기는 이러한 고압의 유지 및 밀폐가 용이하지 않았으며, 특히 게이트 밸브를 챔버에 삽입하는 구조, 즉 챔버를 개폐하는 도어를 가지는 구조의 종래 고압 처리기는 장치의 크기가 증가하고, 가공비용이 많이 드는 문제점이 있었다.The conventional high pressure processor was not easy to maintain and seal such a high pressure, and in particular, the conventional high pressure processor having a structure for inserting a gate valve into the chamber, that is, a structure having a door for opening and closing the chamber increases the size of the device and increases the processing cost. There was a lot of trouble.
상기와 같은 문제점을 감안한 본 발명이 해결하고자 하는 과제는, 처리실 공간이 완전한 원통형의 구조를 가질 수 있는 원통형 고압처리기를 제공함에 있다.The problem to be solved by the present invention in view of the above problems is to provide a cylindrical high-pressure processor that can have a completely cylindrical structure of the processing chamber space.
또한 본 발명이 해결하고자 하는 다른 과제는, 동시에 고압 처리할 수 있는 웨이퍼의 수량을 상대적으로 적은 공간에서 증가시킬 수 있는 원통형 고압처리기를 제공함에 있다.In addition, another object of the present invention is to provide a cylindrical autoclave capable of increasing the number of wafers that can be autoclaved at the same time in a relatively small space.
아울러 본 발명이 해결하고자 하는 다른 과제는, 보다 안전성을 높임과 아울러 누설방지의 신뢰성을 향상시킬 수 있는 원통형 고압처리기를 제공함에 있다.In addition, another problem to be solved by the present invention is to provide a cylindrical high-pressure processor that can increase the safety and improve the reliability of the leakage prevention.
그리고 본 발명이 해결하고자 하는 다른 과제는, 별도의 가열 수단을 외부에 부착하지 않고도 충분한 열을 공급하여 고압처리가 이루어질 수 있도록 하는 원통형 고압처리기를 제공함에 있다.In addition, another object of the present invention is to provide a cylindrical high-pressure processor for supplying sufficient heat without a separate heating means to be attached to the high pressure treatment.
또한 본 발명이 해결하고자 하는 또 다른 과제는, 고압의 유체의 혼합을 보다 용이하게 하며, 열전달 효율을 개선할 수 있는 원통형 고압처리기를 제공함에 있다.In addition, another problem to be solved by the present invention is to provide a cylindrical high-pressure processor that can facilitate the mixing of high-pressure fluid and improve the heat transfer efficiency.
상기와 같은 과제를 해결하기 위한 본 발명은, 상하 개폐되며, 원통형의 처리공간부를 제공하는 내부챔버와, 상기 내부챔버가 닫힌 상태에서 상기 내부챔버의 기밀 상태를 견고하게 지지하며, 좌우개폐되는 외부챔버와, 상기 내부챔버를 상하 개폐하는 내부챔버구동부와, 상기 외부챔버를 좌우 개폐하는 외부챔버구동부와, 상기 내부챔버구동부와 상기 외부챔버구동부 및 상기 내부챔버의 일측을 고정 지지하는 지지프레임을 포함한다.The present invention for solving the above problems, the upper and lower opening and closing, the inner chamber to provide a cylindrical processing space portion, and while the inner chamber is in a closed state to firmly support the airtight state of the inner chamber, the outside of the left and right opening A chamber, an inner chamber driving part for opening and closing the inner chamber up and down, an outer chamber driving part for opening and closing the outer chamber left and right, and a support frame for fixing the inner chamber driving part, the outer chamber driving part, and one side of the inner chamber; do.
상기와 같이 구성되는 본 발명 원통형 고압처리기는, 챔버 자체를 개폐하는 도어를 사용하지 않고, 챔버를 상부와 하부로 나누어 구성하고, 그 상부챔버 또는 하부챔버를 이동시켜 처리실을 개방 또는 밀폐시킬 수 있도록 구성함으로써, 고압처리가 이루어지는 처리실의 내부 공간을 완전한 원통형의 공간으로 제공할 수 있으며, 따라서 고압이 특정 위치에서 집중되는 것을 방지하여 누설방지특성을 향상시킴과 아울러 장치의 수명 단축을 방지하고, 안전성을 향상시킬 수 있는 효과가 있다.Cylindrical high pressure processor of the present invention configured as described above is configured by dividing the chamber into an upper part and a lower part without using a door that opens and closes the chamber itself, and moves the upper chamber or the lower chamber to open or close the process chamber. In this way, the inner space of the processing chamber in which the high pressure treatment is performed can be provided as a completely cylindrical space, thereby preventing the high pressure from being concentrated at a specific position, thereby improving leakage preventing characteristics and preventing shortening of the life of the device and safety. There is an effect to improve.
또한 본 발명 원통형 고압처리기는, 상기 챔버를 외부에서 지지하고, 밀폐 시키는 외부챔버를 더 포함하여 안전성을 보다 향상시킬 수 있는 효과가 있다.In addition, the cylindrical high pressure processor of the present invention further includes an external chamber that supports and seals the chamber from the outside, thereby further improving safety.
그리고 본 발명 원통형 고압처리기는, 상기 원통형 처리공간을 제공하는 챔버의 높이에 따라 처리할 수 있는 웨이퍼의 수가 결정되는 구조로서, 안전성 및 공정안정성을 확보한 상태로 상대적으로 더 많은 웨이퍼를 동시에 처리함이 가능하기 때문에 생산성을 향상시킬 수 있는 효과가 있다.In addition, the cylindrical high pressure processor of the present invention is a structure in which the number of wafers that can be processed is determined according to the height of a chamber providing the cylindrical processing space, and simultaneously processes relatively more wafers while securing safety and process stability. Since this is possible, there exists an effect which can improve productivity.
그리고 본 발명 원통형 고압처리기는, 챔버의 벽면 등에 직접 히터를 삽입 설치하여 고압처리에 필요한 열을 공급하며, 혼합기재를 사용하여 고압 유체를 챔버 내에서 혼합하여, 그 챔버의 외부에서 가열을 하는 방식 및 비혼합방식에 비하여 열전달효율이 우수하여 사용되는 에너지를 줄일 수 있으며, 장치의 크기를 보다 줄일 수 있는 효과가 있다.In addition, the cylindrical high pressure processor of the present invention inserts a heater directly into a wall of the chamber to supply heat required for high pressure treatment, and mixes a high pressure fluid in the chamber using a mixing material to heat the outside of the chamber. Compared with the non-mixing method, the heat transfer efficiency is excellent, and thus the energy used can be reduced, and the size of the device can be further reduced.
도 1 내지 도 3은 각각 본 발명의 바람직한 실시예에 따른 원통형 고압처리기의 닫힌 상태 사시도, 열린상태 사시도 및 저면측 사시도이다.1 to 3 are closed state perspective views, open state perspective views, and bottom side perspective views of the cylindrical high pressure processor according to the preferred embodiment of the present invention, respectively.
도 4는 도 2에서 A-A 방향의 단면 구성도이고, 도 5는 도 2에서 B-B 방향의 단면 구성도이다.4 is a cross-sectional configuration of the A-A direction in Figure 2, Figure 5 is a cross-sectional configuration of the B-B direction in FIG.
도 6은 본 발명의 바람직한 실시예에 따른 상부내부챔버의 일부 단면 구성도이다.6 is a partial cross-sectional view of the upper inner chamber according to a preferred embodiment of the present invention.
도 7과 도 8은 각각 본 발명의 다른 실시예에 따른 상부내부챔버의 일부 단면 구성도이다.7 and 8 are partial cross-sectional view of the upper inner chamber according to another embodiment of the present invention, respectively.
도 9은 상부내부챔버의 다른 실시예의 구성도이다.9 is a configuration diagram of another embodiment of the upper inner chamber.
도 10는 본 발명의 다른 실시예에 따른 원통형 고압처리장치의 구성도이다.10 is a block diagram of a cylindrical high pressure treatment apparatus according to another embodiment of the present invention.
도 11은 도 11의 일부 상세 구성도이다.11 is a detailed configuration diagram of FIG. 11.
-부호의 설명- Explanation of sign
100:지지프레임 110:이송가이드100: support frame 110: transfer guide
120:연결부 130:외부챔버구동부120: connection 130: outer chamber drive
140:이송홈 150:혼합구동축140: Feed groove 150: Mixed drive shaft
160:배기노즐 170:공급노즐160: exhaust nozzle 170: supply nozzle
200:외부챔버 210:제1외부챔버 200: outer chamber 210: first outer chamber
220:제2외부챔버 300:내부챔버220: second outer chamber 300: inner chamber
310:상부내부챔버 320:하부내부챔버310: upper inner chamber 320: lower inner chamber
330:내부챔버구동부 340:웨이퍼지지부330: inner chamber drive part 340: wafer support part
311:이동블록 312:유지블록311: Move block 312: Keep block
400:웨이퍼400: Wafer
이하, 상기와 같이 구성되는 본 발명 원통형 고압처리장치의 구성과 작용을 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, the configuration and operation of the present invention, a cylindrical high pressure treatment apparatus configured as described above will be described in detail.
도 1 내지 도 3은 각각 본 발명의 바람직한 실시예에 따른 원통형 고압처리기의 닫힌 상태 사시도, 열린상태 사시도 및 저면측 사시도이다.1 to 3 are closed state perspective views, open state perspective views, and bottom side perspective views of the cylindrical high pressure processor according to the preferred embodiment of the present invention, respectively.
도 1 내지 도 3을 각각 참조하면, 본 발명의 바람직한 실시예에 따른 원통형 고압처리기는, 적어도 일측면이 오픈된 지지프레임(100)과, 상기 지지프레임(100)의 내측에 수용되어 외부챔버구동부(310)의 구동력을 연결부(120)를 통해 전달받아 이송가이드(110) 및 이송홈(140)을 따라 각각 좌우로 구동되는 제1외부챔버(210) 및 제2회부챔버(220)를 포함하는 외부챔버(200)와, 상기 외부챔버(200)의 내측에 위치하여 내부에 원통형 처리공간을 제공하며, 상기 지지프레임(100)의 상부에 위치하는 내부챔버구동부(330)에 상하 개폐되는 내부챔버(300)를 포함하여 구성된다.1 to 3, the cylindrical high pressure processor according to a preferred embodiment of the present invention, the support frame 100 and at least one side is open, the outer chamber driving portion accommodated inside the support frame 100 Receiving the driving force of the 310 through the connecting portion 120 includes a first outer chamber 210 and the second receiving chamber 220 which is driven left and right along the transfer guide 110 and the transfer groove 140, respectively The inner chamber 200 and the inner chamber which is positioned inside the outer chamber 200 to provide a cylindrical processing space therein, and is opened and closed by the inner chamber driving part 330 located above the support frame 100. And 300.
상기 내부챔버(300)는 상기 내부챔버구동부(330)의 구동에 의해 상하 이동하는 상부내부챔버(310)와, 상기 지지프레임(100)의 바닥면에 고정되며 다수의 웨이퍼(400)를 실장하는 웨이퍼지지부(340)가 내부에 구비된 하부내부챔버(320)를 포함하여 구성된다.The inner chamber 300 is fixed to a bottom surface of the upper inner chamber 310 and the support frame 100 to move up and down by the drive of the inner chamber driving unit 330 to mount a plurality of wafers 400 The wafer support part 340 is configured to include a lower inner chamber 320 provided therein.
이하, 상기와 같이 구성되는 본 발명의 바람직한 실시예에 따른 원통형 고압처리기의 구성과 작용을 보다 상세히 설명한다.Hereinafter, the configuration and operation of the cylindrical high-pressure processor according to a preferred embodiment of the present invention configured as described above in more detail.
먼저, 지지프레임(100)은 상판, 하판 및 그 상판과 하판을 각각 연결하는 측면판을 구비하되, 웨이퍼(400)의 로딩 및 언로딩을 위하여 일측면부가 개방된 구조를 가질 수 있다. First, the support frame 100 may include a top plate, a bottom plate, and a side plate connecting the top plate and the bottom plate, respectively, and may have a structure in which one side portion is opened for loading and unloading the wafer 400.
도면에 도시한 바와 같이 오픈된 측면부와 마주하는 측면부 역시 개방된 형태가 바람직하다. 이는 장치의 유지 보수와 공정유체의 공급에 유리한 구조이다.As shown in the figure, the side portion facing the open side portion is also preferably an open form. This is advantageous for the maintenance of the device and the supply of process fluids.
이와 같은 지지프레임(100)은 각 구성요소를 지지 및 가이드하는 것으로, 도면에 도시한 구성 이외에 다양한 변형된 실시예를 가질 수 있다. 예를 들어 설치 공간에 따라 상호 연결된 구조의 상판, 하판 및 측면판을 사용하지 않고, 상판과 하판만을 사용할 수도 있다.The support frame 100 as described above supports and guides each component, and may have various modified embodiments in addition to the configuration shown in the drawings. For example, depending on the installation space, only the top plate and the bottom plate may be used without using the top plate, the bottom plate and the side plate of the interconnected structure.
상기 지지프레임(100)의 하판의 상면에는 상기 외부챔버(200)를 이루는 제1외부챔버(210)와 제2외부챔버(220)를 각각 안정적으로 직선이동시킬 수 있는 이송가이드(110)가 마련되어 있다. 이 이송가이드(110)는 LM 가이드 등 알려진 레일을 사용할 수 있다.The upper surface of the lower plate of the support frame 100 is provided with a transfer guide 110 for stably linearly moving the first outer chamber 210 and the second outer chamber 220 constituting the outer chamber 200, respectively. have. The transfer guide 110 may use a known rail such as an LM guide.
또한 그 지지프레임(100)의 하판에는 이송홈(140)이 마련되어 그 하판의 저면에 고정된 외부챔버구동부(130)의 작용에 의해 상기 제1외부챔버(210)와 제2외부챔버(220)가 각각 직선이동할 수 있도록, 그 제1외부챔버(210)와 외부챔버구동부(130)의 구동축, 제2외부챔버(220)와 구동부(130)의 구동축을 연결하는 연결부(120)가 이동할 수 있는 공간을 제공한다.In addition, the lower plate of the support frame 100 is provided with a conveying groove 140, the first outer chamber 210 and the second outer chamber 220 by the action of the outer chamber driving unit 130 fixed to the bottom of the lower plate The connecting portion 120 connecting the drive shaft of the first outer chamber 210 and the outer chamber driving unit 130, the drive shaft of the second outer chamber 220 and the driving unit 130 can be moved so that each can move linearly. Provide space.
상기 제1외부챔버(210)와 제2외부챔버(220)의 형상은 상호 접한 상태에서 양측으로 상기 내부챔버(300)의 일부가 노출되도록 양측이 개방된 프레임 구조를 가지고 있으며, 이는 이후에 상세히 설명될 외부챔버(200)의 기능을 수행하면서 중량을 줄이고, 장치의 부피를 줄일 수 있는 구조이다.The shape of the first outer chamber 210 and the second outer chamber 220 has a frame structure in which both sides are open so that a part of the inner chamber 300 is exposed to both sides in contact with each other. It is a structure that can reduce the weight and reduce the volume of the device while performing the function of the outer chamber 200 to be described.
그 다음, 상기 제1외부챔버(210)와 제2외부챔버(220)의 내측에 위치하는 내부챔버(300)는 상부내부챔버(310)와 하부내부챔버(320)로 이루어져 있다. 상기 상부내부챔버(310)는 상기 지지프레임(100)의 상판에 고정되는 내부챔버구동부(330)에 의해 상하 이동하며, 하부내부챔버(320)는 상기 지지프레임(100)의 하판 상에 고정되어 있다.Next, the inner chamber 300 positioned inside the first outer chamber 210 and the second outer chamber 220 includes an upper inner chamber 310 and a lower inner chamber 320. The upper inner chamber 310 is moved up and down by the inner chamber driving part 330 fixed to the upper plate of the support frame 100, the lower inner chamber 320 is fixed on the lower plate of the support frame 100 have.
도면과 이후의 설명에서는 하나의 바람직한 실시예의 설명을 위하여 하부내부챔버(320)가 고정되고, 상부내부챔버(310)가 상하 이동하는 것으로 설명하겠지만, 그 반대로 하부내부챔버(320)가 상하 이동가능하고, 상부내부챔버(310)가 고정된 형태나, 하부내부챔버(320)와 상부내부챔버(310)가 모두 상하 이동하는 구조도 가능하다.In the drawings and the following description, the lower inner chamber 320 is fixed and the upper inner chamber 310 is moved up and down for the purpose of describing one preferred embodiment. On the contrary, the lower inner chamber 320 is movable up and down. The upper inner chamber 310 may be fixed, or the lower inner chamber 320 and the upper inner chamber 310 may move up and down.
상기 하부내부챔버(320)와 상부내부챔버(310)의 형상은 그 외형이 원통형의 구조이며, 별도의 도어가 설치되지 않기 때문에 내부의 고압처리공간도 완전한 원통형의 구조를 가지고 있다.The lower inner chamber 320 and the upper inner chamber 310 has a cylindrical shape, and since the separate door is not installed, the internal high pressure treatment space also has a completely cylindrical structure.
이러한 원통형의 고압처리공간은 압력의 부분적인 집중현상을 방지하여 누설 및 장치의 수명단축을 방지할 수 있는 구조이다.This cylindrical high pressure treatment space is a structure that can prevent the partial concentration of pressure to prevent leakage and shorten the life of the device.
상기 하부내부챔버(320)에는 다수의 웨이퍼(400)를 고정하는 웨이퍼지지부(340)가 고정설치되어 있으며, 상기 상부내부챔버(310)가 상향 이동하고, 상기 제1외부챔버(210)와 제2외부챔버(220)가 오픈된 상태에서 다수의 웨이퍼(400)가 그 웨이퍼지지부(340)에 로딩 또는 언로딩 된다.The lower inner chamber 320 is provided with a wafer support 340 for fixing a plurality of wafers 400, the upper inner chamber 310 is moved upward, the first outer chamber 210 and the first The plurality of wafers 400 are loaded or unloaded to the wafer support 340 in the state in which the outer chamber 220 is opened.
상기 하부내부챔버(320)에는 저면으로부터 내부까지 관통되는 혼합구동축(150)이 마련되어 있으며, 그 혼합구동축(150)을 통해 내부의 공정유체를 배출할 수 있는 배기노즐(160)이 마련되며, 도 1 내지 도 3에서는 도시되지 않았지만 이후에 상세히 설명할 공급노즐이 설치될 수 있다.The lower inner chamber 320 is provided with a mixing drive shaft 150 penetrating from the bottom to the inside, an exhaust nozzle 160 for discharging the process fluid therein is provided through the mixing drive shaft 150, Although not shown in FIGS. 1 to 3, a supply nozzle to be described in detail later may be installed.
상기 설명과 같이 본 발명은 별도의 도어를 설치하지 않고, 고압처리공간을 제공하는 내부챔버(300)를 상호 상하 분리되는 상부내부챔버(310)와 하부내부챔버(320)를 포함하여 구성함으로써, 원통형의 고압처리공간을 제공하는 것이 용이하게 된다.As described above, the present invention is configured by including an upper inner chamber 310 and a lower inner chamber 320 which are separated from each other up and down by providing an inner chamber 300 providing a high pressure treatment space without installing a separate door. It is easy to provide a cylindrical high pressure treatment space.
이하에서는 본 발명의 바람직한 실시예에 따른 원통형 고압처리장치의 보다 구체적인 구성과 실링구조, 작용에 관하여 보다 더 상세하게 설명한다.Hereinafter will be described in more detail with respect to a more specific configuration and sealing structure, the operation of the cylindrical high pressure treatment apparatus according to a preferred embodiment of the present invention.
도 4는 도 2에서 A-A 방향의 단면 구성도이고, 도 5는 도 2에서 B-B 방향의 단면 구성도이다.4 is a cross-sectional configuration of the A-A direction in Figure 2, Figure 5 is a cross-sectional configuration of the B-B direction in FIG.
도 4 및 도 5를 각각 참조하면 본 발명의 바람직한 실시예에 따른 원통형 고압처리장치는, 상기 상부내부챔버(310)의 구성은 상기 내부챔버구동부(330)에 의해 상하 이동되는 원판형의 이동블록(311)과, 상기 이동블록(311)과는 유격이 존재하는 상태로 결합되어 하향으로 연장되는 원통형의 유지블록(312)으로 구성된다.4 and 5, the cylindrical high pressure treatment apparatus according to the preferred embodiment of the present invention, the configuration of the upper inner chamber 310 of the disk-shaped moving block is moved up and down by the inner chamber drive unit 330 311 and the moving block 311 is configured as a cylindrical retaining block 312 extending downwardly coupled to the state that the play is present.
또한 그 유지블록(312)에는 주공급노즐(350)이 관통되어 있어 외부에서 공정유체를 공급할 수 있도록 구성되어 있다. 이 주공급노즐(350) 이외에 보다 효율적인 공정유체의 공급을 위하여 상기 하부내부챔버(320)의 저면측에서 공정유체를 공급하는 공급노즐(170)이 마련될 수 있다. In addition, the holding block 312 is configured so that the main supply nozzle 350 is penetrated to supply the process fluid from the outside. In addition to the main supply nozzle 350, a supply nozzle 170 for supplying a process fluid from a bottom surface side of the lower inner chamber 320 may be provided to supply a process fluid more efficiently.
상기 주공급노즐(350)과 공급노즐(170)을 통해 공급된 공정유체는 상기 웨이퍼(400)의 상부 및 하부측에서 공정유체를 공급하거나, 상기 웨이퍼(400)를 지지하는 웨이퍼지지부(340)에 마련된 공급로를 통해 웨이퍼(400)의 상부로 공급할 수 있는 방식을 사용할 수 있으나, 이러한 공급방식의 차이에 의해 본 발명은 한정되는 것은 아니다.The process fluid supplied through the main supply nozzle 350 and the supply nozzle 170 may supply the process fluid from the upper and lower sides of the wafer 400 or support the wafer 400. A method capable of supplying the upper portion of the wafer 400 through the supply path provided in the present invention may be used, but the present invention is not limited by the difference in the supply method.
상기 혼합구동축(150)의 상부 끝단에는 임펠러(360)가 구비되어 있어 혼합구동축(150) 내의 회전축의 회전에 따라 공급된 공정유체를 혼합하여 보다 균일한 고압처리가 이루어질 수 있도록 한다.An impeller 360 is provided at the upper end of the mixing drive shaft 150 to mix the process fluid supplied according to the rotation of the rotating shaft in the mixing drive shaft 150 so that a more uniform high pressure treatment can be achieved.
도면에서는 기계적으로 구동되는 임펠러(360)를 혼합수단의 예로 들었으나, 임펠러(360) 이외에 외부 순환펌프를 이용하여 순환혼합하거나, 초음파(ultrasonic wave) 장치를 이용하여 강한 진동을 주거나, 공정유체의 압력을 급격하게 조절하여 공정유체를 유동시키는 구조의 혼합기재를 사용할 수 있다.In the drawings, the mechanically driven impeller 360 is an example of a mixing means. However, in addition to the impeller 360, an circulating mixing is performed using an external circulation pump, or an ultrasonic wave device is used to give a strong vibration, or It is possible to use a mixed substrate having a structure in which the process fluid is flowed by rapidly adjusting the pressure.
아울러 고압처리가 완료된 웨이퍼(400)를 언로딩하기 위해서는 공정유체를 배출할 필요가 있으며, 이를 위하여 상기 혼합구동축(150)에 연결되는 배기노즐(160)을 통해 배출한다. 여기서는 혼합구동축(150)에 연결되는 배기노즐(160)을 도시하고 설명하였으나, 그 배기노즐(160)이 직접 내부챔버(300)의 내측으로 연결되는 구조도 사용할 수 있다.In addition, in order to unload the wafer 400 which has been subjected to the high pressure treatment, it is necessary to discharge the process fluid, and for this purpose, it is discharged through the exhaust nozzle 160 connected to the mixing drive shaft 150. Here, although the exhaust nozzle 160 connected to the mixing drive shaft 150 is illustrated and described, a structure in which the exhaust nozzle 160 is directly connected to the inner chamber 300 may also be used.
앞서 설명한 바와 같이 주공급노즐(350)과 공급노즐(170)을 통해 상기 내부챔버(300)의 내부로 공급된 공정유체는 그 압력이 공정압력으로 상승할 수 있도록 원통형 공간인 내부챔버(300)의 내에서 누설이 방지되어야 한다. 이와 같은 고압처리에서 사용하는 고압을 유지하기 위하여 본 발명은 상기 상부내부챔버(310)의 구조를 앞서 설명한 이동블록(311)과 유지블록(312)으로 분할된 구조를 사용하며, 이와 같은 구조의 상부내부챔버(310)의 구조의 누설 방지 작용을 설명하면 다음과 같다.As described above, the process fluid supplied into the inner chamber 300 through the main supply nozzle 350 and the supply nozzle 170 is an inner chamber 300 which is a cylindrical space so that the pressure can rise to the process pressure. Leakage should be prevented in the In order to maintain the high pressure used in such a high pressure treatment, the present invention uses a structure divided into the moving block 311 and the holding block 312 described above the structure of the upper inner chamber 310, Referring to the leakage preventing action of the structure of the upper inner chamber 310 is as follows.
도 6은 본 발명의 바람직한 실시예에 따른 상부내부챔버(310)의 일부 단면 구성도이다.6 is a partial cross-sectional view of the upper inner chamber 310 according to the preferred embodiment of the present invention.
도 6을 참조하면 상부내부챔버(310)가 하부내부챔버(320)와 접한 상태에서 도면에는 생략되었으나, 외부챔버(200)가 닫힌 상태일 때, 그 이동블록(311)의 상면은 그 외부챔버(200)를 이루는 제1외부챔버(210)와 제2외부챔버(220)의 상부 저면에 접하여 고정된다. Referring to FIG. 6, in the state where the upper inner chamber 310 is in contact with the lower inner chamber 320, it is omitted in the drawing. When the outer chamber 200 is closed, the upper surface of the moving block 311 is the outer chamber. The upper outer surface of the first outer chamber 210 and the second outer chamber 220 forming the 200 is fixed in contact with each other.
상기 유지블록(312)은 측면일부가 돌출된 돌출부(311a)를 가지는 원판형 구조의 이동블록(311)이 삽입될 수 있도록 측면판(312b)과 상판(312a)이 결합된 구조를 가지며, 그 이동블록(311)과 유지블록(312)의 사이에는 유격이 존재한다.The retaining block 312 has a structure in which the side plate 312b and the top plate 312a are coupled to each other so that the movable block 311 having a protruding portion 311a protruding from the side thereof can be inserted therein. There is a play between the moving block 311 and the holding block 312.
상기 이동블록(311)과 유지블록(312)의 사이에는 피크부싱(PEEK bushing)이 삽입되어 상기 이동블록(311)과 유지블록(312)사이의 미세 간격으로 인한 마찰을 방지할 수 있다.A peak bushing is inserted between the movable block 311 and the retaining block 312 to prevent friction due to a minute gap between the movable block 311 and the retaining block 312.
상기 유지블록(312)을 이루는 상판(312a)과 측면판(312b)의 사이에는 누설방지를 위한 실링부재(316)가 마련되어 있으며, 상기 이동블록(311)은 처리공간부(D)의 압력이 증가함에 따라 상향으로의 압력이 증가하게 된다. A sealing member 316 is provided between the upper plate 312a and the side plate 312b constituting the holding block 312 to prevent leakage, and the moving block 311 has a pressure in the processing space D. As it increases, the upward pressure increases.
따라서 그 압력의 증가에 의해 상향으로 이동하여 그 이동블록(311)의 외경에서 돌출된 상기 돌출부(311a)의 상면이 상기 유지블록(312)의 상판(312a) 저면에 접하게 된다. 이때 그 돌출부(311a)의 상부에는 상기 상판(312a)의 사이에서 기밀이 유지될 수 있도록 실링부재(315)가 마련되어 있다.Therefore, the upper surface of the protrusion 311a protruding from the outer diameter of the moving block 311 by moving upward due to the increase in pressure thereof is in contact with the bottom surface of the upper plate 312a of the retaining block 312. At this time, the sealing member 315 is provided on the upper portion of the protrusion 311a so that the airtightness can be maintained between the upper plate 312a.
또한 상기 상판(312a)의 내경이 상기 측면판(312b)의 내경에 비해 더 좁게 하고, 상기 측면판(312b)은 처리공간부(D)를 이루는 부분의 내경이 상기 이동블록(311)의 삽입을 위한 부분의 내경보다 더 작으며, 그 내경의 차이가 있는 부분의 사이에는 내경이 소정의 경사각(θ)을 가지는 경사면(C)을 이루는 구조를 가진다.In addition, the inner diameter of the upper plate 312a is narrower than the inner diameter of the side plate 312b, and the inner diameter of the portion forming the processing space portion D of the side plate 312b is inserted into the moving block 311. It is smaller than the inner diameter of the portion for, and between the portions having a difference in the inner diameter has a structure in which the inner diameter forms an inclined surface (C) having a predetermined inclination angle (θ).
이러한 구조는 처리공간부(D)의 압력이 증가하면 할 수록 그 경사면(C)에서는 하향의 압력이 작용하게 되며, 따라서 상기 유지블록(312)은 상기 이동블록(311)과는 반대로 하향의 압력을 받게 된다.In this structure, as the pressure of the processing space portion D increases, downward pressure acts on the inclined surface C, so that the holding block 312 has a downward pressure as opposed to the moving block 311. Will receive.
따라서 그 유지블록(312)은 그 하부측의 하부내부챔버(320)에 더욱 밀착되며, 그 사이에서 누설이 발생하지 않도록 작용하게 됨과 아울러 상기 내부 압력으로 인하여 상향의 압력을 받는 이동블록(311)과도 더욱 밀착되어 압력의 누설을 더욱 방지할 수 있다.Therefore, the retaining block 312 is in close contact with the lower inner chamber 320 of the lower side, and acts so that no leakage occurs between the moving block 311 is subjected to upward pressure due to the internal pressure. It is also in close contact with the excess to further prevent the leakage of pressure.
상기 유지블록(312)의 하부내부챔버(320)와 접하는 부분에도 다중의 실링부재(314)가 마련되어 있다.Multiple sealing members 314 are also provided at portions in contact with the lower inner chamber 320 of the retaining block 312.
이와 같이 고압의 분위기가 유지되는 상태에서 웨이퍼(400)들이 처리된다. 이때의 처리는 반도체, 멤스(MEMS), 디스플레이, 정밀부품, 솔라셀의 세정 및 건조일 수 있으며, 처리가 완료된 후에는 고압의 공정유체를 외부로 배기하여 압력을 낮추고 상기 외부챔버(200)를 오픈시키고, 상기 내부챔버(300)의 상부내부챔버(310)를 상향으로 이동동시켜 처리된 웨이퍼(400) 등의 처리대상물을 언로딩하게 된다.In this manner, the wafers 400 are processed in a state where a high pressure atmosphere is maintained. In this case, the process may be cleaning and drying of semiconductors, MEMS, displays, precision parts, and solar cells. After the process is completed, exhaust the high-pressure process fluid to the outside to lower the pressure and lower the external chamber 200. After opening, the object to be processed such as the processed wafer 400 is moved by moving the upper inner chamber 310 of the inner chamber 300 upward.
도 7과 도 8은 각각 도 6의 다른 실시예이며, 다른 작용은 도 6과 동일하나 실링부재(315,314)를 각각 에너자이드 씰(energized seal, 317,318)로 대체한 것이다.7 and 8 are different embodiments of FIG. 6, respectively, and the other functions are the same as those in FIG. 6, but the sealing members 315 and 314 are replaced with energized seals 317 and 318, respectively.
상기 에너자이드 씰(317,318) 각각은 오링 등의 상기 실링부재와는 다르게 접촉면의 측면에 설치하여 실링함이 가능하며, 따라서 더욱 안정적인 실링 특성을 나타낼 수 있다.Each of the energized seals 317 and 318 may be installed on the side of the contact surface differently from the sealing members such as O-rings, and thus may seal more stable sealing properties.
도 9는 상기 상부내부챔버의 다른 실시 구성도이다.9 is another embodiment of the upper inner chamber.
도 9를 참조하면 상기 상부내부챔버(310)에는 다수의 봉히터(370)가 삽입되어 있으며, 그 상부내부챔버(310)의 상면에는 그 봉히터(370)에 전원을 공급하기 위한 배선을 수용하는 배선홈(371)이 마련되어 있다. Referring to FIG. 9, a plurality of rod heaters 370 are inserted into the upper inner chamber 310, and a wiring for supplying power to the rod heaters 370 is provided on an upper surface of the upper inner chamber 310. A wiring groove 371 is provided.
또한 봉히터(370)는 상기 상부내부챔버(310)의 이동블록(311)과 유지블록(312)에 삽입되는 봉히터(370)의 길이는 서로 다른 것으로 하며, 이러한 봉히터(370)의 작용에 의하여 별도의 외부 가열수단을 사용하지 않고도 고압처리를 위한 적정한 온도로의 가열이 가능하게 된다.In addition, the rod heater 370 has a length of the rod heater 370 inserted into the movable block 311 and the retaining block 312 of the upper inner chamber 310 is different, the action of the rod heater 370 This enables heating to an appropriate temperature for high pressure treatment without using a separate external heating means.
보조적으로 상기 유지블록(312)의 외주면에는 자켓형 히터가 더 설치될 수 있다. A jacket-type heater may be further installed on the outer circumferential surface of the retaining block 312.
도 10은 본 발명의 다른 실시예에 따른 원통형 고압처리장치의 구성도이고, 도 11은 도 10의 일부 상세 구성도이다.10 is a configuration diagram of a cylindrical high pressure treatment apparatus according to another embodiment of the present invention, and FIG. 11 is a detailed configuration diagram of FIG. 10.
도 10과 도 11을 각각 참조하면 본 발명의 다른 실시예에 따른 원통형 고압처리장치는, 외부챔버구동부(130)의 구동력을 외부챔버(200)에 전달하는 연결부(120)는 그 외부챔버구동부(130)의 축이 삽입되는 삽입홈(121)이 마련되어 있다. 상기 삽입홈(121)은 상하방향으로 길게 마련된 것이며, 따라서 상기 외부챔버(200)는 상기 외부챔버구동부(130)의 축으로부터 상하 이동이 가능하게 된다.10 and 11, the cylindrical high pressure treatment apparatus according to another embodiment of the present invention, the connecting portion 120 for transmitting the driving force of the outer chamber driving unit 130 to the outer chamber 200 is the outer chamber driving unit ( An insertion groove 121 into which the shaft of 130 is inserted is provided. The insertion groove 121 is provided to extend in the vertical direction, and thus the outer chamber 200 is able to move up and down from the shaft of the outer chamber driving unit 130.
또한 상기 이송가이드(110)에 맞물려 외부챔버(200)가 직선이동될 수 있도록 하는 가이드(221)를 외부챔버(200)의 제1외부챔버(210) 또는 제2외부챔버(220)에 고정하는 유동연결판(224)이 구비되어 있다. 상기 유동연결판(224)은 부싱(223)에 의해 상기 제1외부챔버(210) 또는 제2외부챔버(220)에 결합되며, 따라서 그 제1외부챔버(210) 또는 제2외부챔버(220)는 그 가이드(221)가 상하 변위가 발생하지 않도록 고정된 상태에서 상하 변위될 수 있다.In addition, the guide 221 is fixed to the first outer chamber 210 or the second outer chamber 220 of the outer chamber 200 by engaging the transfer guide 110 so that the outer chamber 200 can be linearly moved. The fluid connection plate 224 is provided. The flow connecting plate 224 is coupled to the first outer chamber 210 or the second outer chamber 220 by a bushing 223, and thus the first outer chamber 210 or the second outer chamber 220. ) May be vertically displaced in a state in which the guide 221 is fixed so that vertical displacement does not occur.
상기 제1외부챔버(210)와 제2외부챔버(220)의 내부챔버(300)가 삽입되는 공간은, 그 내부챔버(300)와의 간섭을 방지하기 위하여 내부챔버(300)의 외형보다 약간의 여유도를 가지도록 더 크게 형성될 수 있다.The space into which the inner chamber 300 of the first outer chamber 210 and the second outer chamber 220 is inserted is slightly smaller than the outer shape of the inner chamber 300 in order to prevent interference with the inner chamber 300. It can be made larger to have a margin.
이때 상기 내부챔버(300)와 외부챔버(200)가 각각 닫힌 상태에서 고압처리가 진행되면, 앞서 상세히 설명한 내부챔버(300)의 이동블록(311)이 상향의 압력을 받아 약간 상향 이동하면서 그 외부챔버(200)에 상향의 힘을 전달하게 된다.At this time, when the high pressure treatment is performed in the state in which the inner chamber 300 and the outer chamber 200 are closed, respectively, the moving block 311 of the inner chamber 300 described above is moved upward slightly under the upward pressure and the outside thereof. The upward force is transmitted to the chamber 200.
이때 외부챔버(200) 또한 앞서 설명한 삽입홈(121)과 부싱(223)에 의해 연결되는 유동연결판(224)의 작용으로 그 외부챔버(200)의 하부가 내부챔버(300)의 아래쪽에 접하게 되어 더 이상 상향으로 이동하지 않게 된다.At this time, the outer chamber 200 also acts as a flow connecting plate 224 connected by the insertion groove 121 and the bushing 223 described above so that the lower portion of the outer chamber 200 is in contact with the lower side of the inner chamber 300. No longer moving upwards.
이와 같은 상태에서 상기 유지블록(312)의 경사면에 하향의 압력이 작용하여 유체압력이 증가할수록 견고한 밀폐 상태를 이룰 수 있게 된다.In such a state, downward pressure acts on the inclined surface of the retaining block 312 so that the fluid pressure increases to achieve a tightly sealed state.
전술한 바와 같이 본 발명에 따른 원통형 고압처리장치에 대하여 바람직한 실시예를 들어 상세히 설명하였지만, 본 발명은 전술한 실시예들에 한정되는 것이 아니고, 특허청구범위와 발명의 상세한 설명 및 첨부한 도면의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 본 발명에 속한다.As described above, the cylindrical high pressure treatment apparatus according to the present invention has been described in detail with reference to a preferred embodiment, but the present invention is not limited to the above-described embodiments, the claims and the detailed description of the invention and the accompanying drawings It is possible to carry out various modifications within the scope and this also belongs to the present invention.
본 발명은 고압처리기의 실링성을 향상시킨 것으로, 산업상 이용 가능성이 있다.This invention improves the sealing property of a high pressure processor, and there exists industrial applicability.
Claims (8)
- 상하 개폐되며, 원통형의 처리공간부를 제공하는 내부챔버;An inner chamber which is opened and closed vertically and provides a cylindrical processing space part;상기 내부챔버가 닫힌 상태에서 상기 내부챔버의 기밀 상태를 견고하게 지지하며, 열린 상기 내부챔버로 처리대상물의 로딩 및 언로딩이 가능하도록 이동가이드부를 따라 좌우개폐되는 외부챔버;An outer chamber that firmly supports an airtight state of the inner chamber in the closed state of the inner chamber, and which is left and right opened and closed along a movement guide part to enable loading and unloading of the object into the opened inner chamber;상기 내부챔버를 상하 개폐하는 내부챔버구동부;An inner chamber driving part which opens and closes the inner chamber up and down;상기 외부챔버를 좌우 개폐하는 외부챔버구동부; 및An outer chamber driving part for opening and closing the outer chamber left and right; And상기 내부챔버구동부와 상기 외부챔버구동부 및 상기 내부챔버의 일측을 고정 지지하는 지지프레임을 포함하는 원통형 고압처리기.And a support frame for fixing and supporting the inner chamber driving part, the outer chamber driving part, and one side of the inner chamber.
- 제1항에 있어서,The method of claim 1,상기 내부챔버는,The inner chamber is,상기 내부챔버구동부의 구동에 의해 상하 이동하며, 상기 처리공간부의 압력 상승에 따라 기밀을 유지하는 상부내부챔버;An upper inner chamber which moves up and down by driving of the inner chamber driving part and maintains airtightness according to the pressure rise of the processing space part;상기 지지프레임의 바닥면에 고정되며 다수의 처리대상물을 실장하는 지지부가 내부에 구비된 하부내부챔버; 및A lower inner chamber fixed to the bottom surface of the support frame and having a support portion therein for mounting a plurality of objects to be processed; And상기 하부내부챔버의 바닥면에서 고압유체를 혼합하는 혼합기재를 더 포함하는 원통형 고압처리기.Cylindrical high pressure processor further comprising a mixing material for mixing the high pressure fluid in the bottom surface of the lower inner chamber.
- 제2항에 있어서,The method of claim 2,상기 상부내부챔버는,The upper inner chamber,중앙이 상기 내부챔버구동부에 연결되어 상하 이동되며, 닫힌 상태에서 상기 외부챔버의 상부측 저면에 접하는 원통형의 이동블록;A cylindrical moving block having a center connected to the inner chamber driving part and moving up and down and in contact with an upper bottom surface of the outer chamber in a closed state;상기 원통형의 이동블록의 외주면에 유격된 상태로 결합되는 유지블록; 및A retaining block coupled to a spaced state on an outer circumferential surface of the cylindrical moving block; And상기 처리공간부의 압력상승에 따라 상기 이동블록이 상향 이동하며 상기 유지블록에 접촉되는 부분의 기밀을 유지하는 실링부재를 포함하는 원통형 고압처리기.Cylindrical high pressure processor including a sealing member for moving the moving block upwards in accordance with the pressure rise of the processing space portion to maintain the airtight portion of the contact portion.
- 제3항에 있어서,The method of claim 3,상기 실링부재는 에너자이드 씰인 것을 특징으로 하는 원통형 고압처리기.Cylindrical high pressure processor, characterized in that the sealing member is an energized seal.
- 제3항에 있어서,The method of claim 3,상기 이동블록과 상기 유지블록에 삽입되는 다수의 봉히터를 더 포함하는 원통형 고압처리기.Cylindrical high pressure processor further comprising a plurality of rod heaters inserted into the movable block and the retaining block.
- 제3항에 있어서,The method of claim 3,상기 이동블록은 외주면에서 돌출부가 돌출되어 있으며, The moving block protrudes from the outer peripheral surface,상기 유지블록은 상기 이동블록의 돌출부가 유격된 상태로 삽입될 수 있도록 상판과 측면판이 체결되고, The retaining block is fastened to the upper plate and the side plate so that the protrusion of the movable block can be inserted in a state,상기 측면판의 상기 이동블록의 돌출부 삽입부분의 내경은 상기 측면판의 타부분의 내경에 비해 더 큰 것을 특징으로 하는 원통형 고압처리기.The inner diameter of the protrusion insertion portion of the movable block of the side plate is larger than the inner diameter of the other portion of the side plate cylindrical high pressure processor.
- 제6항에 있어서,The method of claim 6,상기 측면판의 내경이 상이한 경계부분은 경사면이며, 상기 처리공간부의 압력상승에 의해 상기 경사면에서 하향의 압력이 작용하도록 하는 것을 특징으로 하는 원통형 고압처리기.A boundary portion having a different inner diameter of the side plate is an inclined surface, and the pressure in the downward direction acts on the inclined surface by the pressure rise of the processing space portion.
- 제1항에 있어서,The method of claim 1,상기 외부챔버와 상기 외부챔버구동부는 연결부에 의해 연결되며, The outer chamber and the outer chamber driving portion is connected by a connecting portion,상기 연결부는 상기 외부챔버구동부의 구동축으로부터 상하변위되도록 상기 구동축이 삽입되는 삽입홈을 구비하며,The connection part includes an insertion groove into which the drive shaft is inserted so as to be vertically displaced from the drive shaft of the outer chamber driver.상기 외부챔버는 상기 이동가이드부에 결합되는 가이드를 구비하고, 그 가이드는 고정된 상태에서 상하 변위가 가능하도록 하는 부싱으로 연결된 유동연결판을 포함하는 것을 특징으로 하는 원통형 고압처리기.The outer chamber is provided with a guide coupled to the moving guide portion, the guide is a cylindrical high pressure processor, characterized in that it comprises a flow connecting plate connected to the bushing to enable vertical displacement in a fixed state.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020100043660A KR101133017B1 (en) | 2010-05-10 | 2010-05-10 | Cylindrical high-pressure treating device |
KR10-2010-0043660 | 2010-05-10 |
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WO2011142499A1 true WO2011142499A1 (en) | 2011-11-17 |
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PCT/KR2010/004538 WO2011142499A1 (en) | 2010-05-10 | 2010-07-13 | Cylindrical high-pressure treatment apparatus |
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WO (1) | WO2011142499A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010022111A (en) * | 1997-07-21 | 2001-03-15 | 세미툴 인코포레이티드 | Drive assembly for a workpiece processing system |
JP2003318152A (en) * | 2002-04-24 | 2003-11-07 | Tokyo Electron Ltd | Device and method for treating substrate |
KR20050019129A (en) * | 2002-06-13 | 2005-02-28 | 비오씨 에드워즈 인코포레이티드 | Substrate processing apparatus and related systems and methods |
JP2005079220A (en) * | 2003-08-29 | 2005-03-24 | Tokyo Electron Ltd | Wafer treatment equipment |
JP2005509280A (en) * | 2001-10-03 | 2005-04-07 | 東京エレクトロン株式会社 | Chamber for high-pressure processing of multiple semiconductor substrates |
-
2010
- 2010-05-10 KR KR1020100043660A patent/KR101133017B1/en not_active IP Right Cessation
- 2010-07-13 WO PCT/KR2010/004538 patent/WO2011142499A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010022111A (en) * | 1997-07-21 | 2001-03-15 | 세미툴 인코포레이티드 | Drive assembly for a workpiece processing system |
JP2005509280A (en) * | 2001-10-03 | 2005-04-07 | 東京エレクトロン株式会社 | Chamber for high-pressure processing of multiple semiconductor substrates |
JP2003318152A (en) * | 2002-04-24 | 2003-11-07 | Tokyo Electron Ltd | Device and method for treating substrate |
KR20050019129A (en) * | 2002-06-13 | 2005-02-28 | 비오씨 에드워즈 인코포레이티드 | Substrate processing apparatus and related systems and methods |
JP2005079220A (en) * | 2003-08-29 | 2005-03-24 | Tokyo Electron Ltd | Wafer treatment equipment |
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KR101133017B1 (en) | 2012-04-09 |
KR20110124079A (en) | 2011-11-16 |
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