WO2023027342A1

WO2023027342A1 - Substrate processing apparatus

Info

Publication number: WO2023027342A1
Application number: PCT/KR2022/010492
Authority: WO
Inventors: 강정현
Original assignee: 피에스케이 주식회사
Priority date: 2021-08-25
Filing date: 2022-07-19
Publication date: 2023-03-02
Also published as: TWI814533B; KR102586680B1; TW202312392A; KR20230030213A

Abstract

The present invention provides a substrate processing apparatus. This substrate processing apparatus comprises: a processing chamber that provides a processing space for processing a substrate; a plasma-generating chamber for generating plasma from a process gas, the generated plasma being supplied to the processing space; a diffusion chamber for diffusing, to the processing space, the plasma generated in the plasma-generating chamber; a baffle which is installed on the upper end of the processing chamber and has a plurality of baffle holes; and an air current-guiding member which is provided inside the diffusion chamber and guides the flow direction of the plasma. The air current-guiding member includes a guide body by which the flow direction of the plasma partially changes. The guide body includes an upper guide body which combines with a side wall of the diffusion chamber to form a first passage, and a lower guide body which is disposed below the upper guide body and combines with the upper guide body to form a second passage.

Description

Substrate processing device

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for processing a substrate using plasma.

Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields or RF Electromagnetic Fields. A semiconductor device manufacturing process includes an ashing or etching process of removing a thin film on a substrate using plasma. The ashing or etching process is performed when ion and radical particles contained in the plasma collide with or react with a film on the substrate.

In general, plasma is formed in the upper region of the chamber and flows into a space where the substrate W is processed. A baffle is provided at the top of the processing space to uniformly distribute the plasma. Due to the structural features of the plasma chamber, plasma is concentrated and supplied to the center of the processing space. Accordingly, plasma is concentrated in a central region of the baffle corresponding to the center of the processing space. Thermal deformation occurs in the central region of the baffle due to excessive concentration of plasma. This shortens the baffle replacement cycle and increases maintenance costs.

In addition, particles are generated in the process of deformation of the baffle. The generated particles are deposited on the upper portion of the substrate positioned in the processing space by an airflow including plasma inside the chamber. Particles deposited on the top of the substrate cause a problem of lowering the efficiency of an ashing or etching process for the substrate.

An object of the present invention is to provide a substrate processing apparatus capable of minimizing the concentration of plasma on one area of a baffle.

Another object of the present invention is to provide a substrate processing apparatus capable of minimizing deformation of a baffle by plasma.

In addition, an object of the present invention is to provide a substrate processing apparatus capable of minimizing generation of particles at the top of a baffle.

Another object of the present invention is to provide a substrate processing apparatus in which an air flow containing particles can be guided to an edge region of a processing space.

The problem to be solved by the present invention is not limited to the above-mentioned problems, and problems not mentioned can be clearly understood by those skilled in the art from this specification and the accompanying drawings. will be.

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate includes a processing chamber providing a processing space for processing a substrate, a plasma generating room generating plasma supplied from a process gas to the processing space, and spreading the plasma generated in the plasma generating chamber into the processing space. A diffusion chamber, a baffle installed at an upper end of the processing chamber and having a plurality of baffle holes, and an air flow guide member provided inside the diffusion chamber to guide a flow direction of the plasma, wherein the air flow guide member includes a flow of the plasma. It includes a guide member whose direction is partially changed, and the guide member is positioned under the upper guide member and an upper guide member that forms a first passage in combination with the sidewall of the diffusion chamber, and is combined with the upper guide member to form a first passage. It may include a lower guide body forming two passages.

According to an embodiment, the lower guide body includes a bottom portion extending horizontally from a lower end of the sidewall of the diffusion chamber toward the center of the diffusion chamber, and an inclined portion inclined upward from the bottom toward the center of the diffusion chamber. can include

According to one embodiment, a bottom hole penetrating the bottom portion in a vertical direction may be formed in the bottom portion.

According to one embodiment, the upper guide body may be provided parallel to the sidewall of the diffusion chamber.

According to one embodiment, the inclined portion may be provided parallel to the sidewall of the diffusion chamber.

According to an embodiment, the air flow guide member further includes a guide ring member provided in a ring shape to guide the air flow of the plasma flowing through the first passage and the second passage to the processing space, An upper end portion of the ring member may be in line contact with an inner surface of the upper guide member, and a lower end portion of the guide ring member may be in line contact with an upper end of the inclined portion.

According to an embodiment, an inflow hole through which the plasma stream introduced through the second passage is introduced may be formed along a circumference of a side surface of the guide ring member.

According to one embodiment, the lower surface of the guide ring member may be open.

According to an embodiment, at least one outflow hole through which the flow of the plasma introduced from the inflow hole flows out may be formed on a lower surface of the guide ring member.

According to an embodiment, the bottom hole and the outflow hole may have diameters smaller than those of the baffle hole.

In addition, the present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate includes a processing chamber providing a processing space for processing a substrate, a plasma generating room generating plasma supplied from a process gas to the processing space, and spreading the plasma generated in the plasma generating chamber into the processing space. A diffusion chamber, a baffle installed at an upper end of the processing chamber and having a plurality of baffle holes, and an air flow guide member provided inside the diffusion chamber to guide a flow direction of the plasma, wherein the air flow guide member is provided in a ring shape. and a guide ring member installed inside the diffusion chamber.

According to an embodiment, an inlet hole through which the airflow of the plasma is introduced may be formed along a circumference of the side surface of the guide ring member.

According to an embodiment, the air flow guide member includes a guide member, and the guide member is combined with a sidewall of the diffusion chamber to form a first passage, and an upper portion for guiding a portion of the plasma flowing into the diffusion chamber. A guide member and a lower guide member positioned below the upper guide member, combined with the upper guide member to form a second passage, and guiding the plasma guided from the first passage through the second passage to the inflow hole. can include

According to an embodiment, an upper end of the guide ring member may be in line contact with an inner surface of the upper guide member, and a lower end of the guide ring member may be in line with an upper end of the inclined portion.

According to an embodiment, the upper guide body and the inclined portion may be provided parallel to the sidewall of the diffusion chamber.

According to one embodiment, the diffusion chamber may be provided in an inverted funnel shape.

According to one embodiment of the present invention, it is possible to minimize the concentration of plasma on one area of the baffle.

In addition, according to an embodiment of the present invention, deformation of the baffle by plasma can be minimized.

In addition, according to one embodiment of the present invention, it is possible to minimize the occurrence of particles on the top of the baffle.

In addition, according to an embodiment of the present invention, an airflow including particles may be guided to an edge area of the processing space.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram schematically showing a substrate processing apparatus of the present invention.

FIG. 2 is a diagram schematically illustrating an embodiment of a process chamber performing a plasma treatment process among process chambers of the substrate processing apparatus of FIG. 1 .

3 is a perspective view schematically showing the air flow guide member of FIG. 2 .

FIG. 4 is a view schematically showing a cross-section of the guide ring member of FIG. 2 viewed from below.

5 and 6 are diagrams schematically showing the flow of airflow in a process chamber in which the plasma treatment process of FIG. 2 is performed.

FIG. 7 is a diagram schematically showing another embodiment of a process chamber performing the plasma treatment process of FIG. 2 .

8 is a perspective view schematically showing the air flow guide member of FIG. 7 .

FIG. 9 is a diagram schematically showing the flow of airflow in a process chamber in which the plasma treatment process of FIG. 7 is performed.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited due to the examples described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize a clearer explanation.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 9 .

1 is a diagram schematically showing a substrate processing apparatus of the present invention. Referring to FIG. 1 , a substrate processing apparatus 1 includes an Equipment Front End Module (EFEM) 20 and a processing module 30 . The front end module 20 and the processing module 30 are arranged in one direction.

The front end module 20 has a load port (Load port, 200) and a transfer frame (220). The load port 200 is disposed in front of the front end module 20 in the first direction 2 . The load port 200 has a plurality of support parts 202 . Each support part 202 is arranged in a row in the second direction 4, and a carrier C (eg, a cassette, FOUP, etc.) is settled. In the carrier C, a substrate W to be subjected to a process and a substrate W after processing are accommodated. The transfer frame 220 is disposed between the load port 200 and the processing module 30 . The transfer frame 220 includes a first transfer robot 222 disposed therein and transferring the substrate W between the load port 200 and the processing module 30 . The first transfer robot 222 moves along the transfer rail 224 provided in the second direction (4) to transfer the substrate (W) between the carrier (C) and the processing module (30).

The processing module 30 includes a load lock chamber 300 , a transfer chamber 400 , and a process chamber 500 .

The load lock chamber 300 is disposed adjacent to the transport frame 220 . For example, the load lock chamber 300 may be disposed between the transfer chamber 400 and the front end module 20 . The load lock chamber 300 serves as a waiting space before a substrate W to be processed is transferred to the process chamber 500 or before a substrate W after processing is transferred to the front module 20. to provide.

The transfer chamber 400 is disposed adjacent to the load lock chamber 300 . When viewed from the top, the transfer chamber 400 has a polygonal body. For example, the transfer chamber 400 may have a pentagonal body when viewed from the top. A load lock chamber 300 and a plurality of process chambers 500 are disposed outside the body along the circumference of the body. A passage (not shown) through which the substrate W enters and exits is formed on each sidewall of the body, and the passage connects the transfer chamber 400 and the load lock chamber 300 or the process chambers 500 . Each passage is provided with a door (not shown) that opens and closes the passage to seal the inside. A second transfer robot 420 that transfers the substrate W between the load lock chamber 300 and the process chamber 500 is disposed in the inner space of the transfer chamber 400 . The second transfer robot 420 transfers an unprocessed substrate W waiting in the load lock chamber 300 to the process chamber 500 or transfers a substrate W after processing has been completed to the load lock chamber 300. do. In addition, the substrates W are transferred between the process chambers 500 in order to sequentially provide the substrates W to the plurality of process chambers 500 . For example, as shown in FIG. 1 , when the transfer chamber 400 has a pentagonal body, load lock chambers 300 are disposed on sidewalls adjacent to the front end module 20, respectively, and process chambers 500 are disposed on the remaining sidewalls. are placed consecutively. The shape of the transfer chamber 400 is not limited thereto, and may be modified and provided in various shapes according to required process modules.

The process chamber 500 is disposed along the circumference of the transfer chamber 400 . A plurality of process chambers 500 may be provided. In each process chamber 500, processing of the substrate W is performed. The process chamber 500 receives the substrate W from the second transfer robot 420 and processes the substrate W, and provides the substrate W upon completion of the process to the second transfer robot 420 . Processes performed in each process chamber 500 may be different from each other. Hereinafter, the process chamber 500 for performing a plasma treatment process will be described in detail.

FIG. 2 is a diagram schematically illustrating a process chamber in which a plasma treatment process is performed among process chambers of the substrate processing apparatus of FIG. 1 .

Referring to FIG. 2 , a process chamber 500 performs a predetermined process on a substrate W using plasma. For example, the thin film on the substrate W may be etched or ashed. The thin film may be various types of films such as a polysilicon film, an oxide film, and a silicon nitride film. Optionally, the thin film may be a natural oxide film or a chemically generated oxide film.

The process chamber 500 may include a processing chamber 520 , a plasma generation chamber 540 , a diffusion chamber 560 , and an exhaust chamber 580 .

The processing chamber 520 provides a processing space 5200 in which a substrate W is placed and processing of the substrate W is performed. Plasma is generated by discharging a process gas in a plasma generating chamber 540 to be described later, and is supplied to the processing space 5200 of the processing chamber 520 . Process gases remaining in the processing chamber 520 and/or reaction by-products and particles generated in the process of processing the substrate W are discharged to the outside through an exhaust chamber 580 to be described later. Due to this, the pressure in the processing chamber 520 can be maintained at the set pressure.

The processing chamber 520 may include a housing 5220 , a support unit 5240 , an exhaust baffle 5260 , and a baffle 5280 . The housing 5220 may have a processing space 5200 in which a substrate processing process is performed. An outer wall of the housing 5220 may be provided as a conductor. For example, the outer wall of the housing 5220 may be made of a metal material including aluminum. An upper portion of the housing 5220 may be open, and an opening (not shown) may be formed in a side wall. The substrate W enters and exits the inside of the housing 5220 through the opening. The opening may be opened and closed by an opening and closing member such as a door (not shown). In addition, an exhaust hole 5222 is formed on the bottom surface of the housing 5220 . Process gases and/or by-products in the processing space 5200 may be exhausted to the outside of the processing space 5200 through the exhaust hole 5222 . The exhaust hole 5222 may be connected to components included in an exhaust chamber 580 to be described later.

The support unit 5240 supports the substrate W in the processing space 5200 . The support unit 5240 may include a support plate 5242 and a support shaft 5244 .

The support plate 5242 may support the substrate W in the processing space 5200 . The support plate 5242 may be supported by a support shaft 5244. The support plate 5242 is connected to an external power source and may generate static electricity by the applied power. The electrostatic force of the generated static electricity may fix the substrate W to the support unit 5240 .

The support shaft 5244 can move the object. For example, the support shaft 5244 may move the substrate W in a vertical direction. For example, the support shaft 5244 is coupled to the support plate 5242 and moves the substrate W by moving the support plate 5242 up and down.

The exhaust baffle 5260 uniformly exhausts the plasma for each area in the processing space 5200 . When viewed from the top, the exhaust baffle 5260 has an annular ring shape. The exhaust baffle 5260 may be positioned between the inner wall of the housing 5220 and the support unit 5240 within the processing space 5200 . A plurality of exhaust holes 5262 are formed in the exhaust baffle 5260 . The exhaust holes 5262 may be provided to face up and down. The exhaust holes 5262 may be provided as holes extending from an upper end to a lower end of the exhaust baffle 5260 . The exhaust holes 5262 may be spaced apart from each other along the circumferential direction of the exhaust baffle 5260 .

The baffle 5280 may be disposed between the processing chamber 520 and the plasma generating chamber 540 . A baffle 5280 may be disposed between the processing chamber 520 and the diffusion chamber 560 . A baffle 5280 may be disposed between the support unit 5240 and the diffusion chamber 560 . A baffle 5280 may be disposed on top of the support unit 5240 . For example, the baffle 5280 may be disposed on top of the processing chamber 520 .

The baffle 5280 may uniformly transfer plasma generated in the plasma generating chamber 540 to the processing space 5200 . A baffle hole 5282 may be formed in the baffle 5280 . A plurality of baffle holes 5282 may be provided. The baffle holes 5282 may be provided spaced apart from each other. The baffle holes 5282 may pass through the baffle 5280 in a vertical direction. The baffle holes 5282 may function as passages through which plasma generated in the plasma generating chamber 540 flows into the processing space 5200 .

When viewed from the top, the baffle 5280 may have a plate shape. When viewed from the top, the baffle 5280 may have a disk shape. When the baffle 5280 is viewed in cross section, the height of its top surface may increase from the edge area to the center area. When viewed in cross section, the baffle 5280 may have a shape in which an upper surface slopes upward from an edge area to a central area. Accordingly, plasma generated in the plasma generation chamber 540 may flow to the edge region of the processing space 5200 along the inclined end surface of the baffle 5280 . Unlike the above example, the cross section of the baffle 5280 may not be inclined. For example, the baffle 5280 may be provided in a disk shape having a predetermined thickness.

The plasma generating chamber 540 may excite a process gas supplied from a gas supply unit 5440 to be described later to generate plasma and supply the generated plasma to the processing space 5200 .

The plasma generating chamber 540 may be located above the processing chamber 520 . The plasma generation chamber 540 may be located above the housing 5220 and the diffusion chamber 560 to be described later. The processing chamber 520, the diffusion chamber 560, and the plasma generating chamber 540 may be sequentially located from the ground along a third direction 6 perpendicular to both the first direction 2 and the second direction 4. can

The plasma generation chamber 540 may include a plasma chamber 5420, a gas supply unit 5440, and a power application unit 5460.

The plasma chamber 5420 may have a shape with open top and bottom surfaces. The plasma chamber 5420 may have a cylindrical shape with open top and bottom surfaces. The plasma chamber 5420 may have a cylindrical shape with open top and bottom surfaces. Openings may be formed at upper and lower ends of the plasma chamber 5420 . The plasma chamber 5420 may have a plasma generating space 5422 . The plasma chamber 5420 may be made of a material including aluminum oxide (Al2O3).

An upper surface of the plasma chamber 5420 may be sealed by a gas supply port 5424 . The gas supply port 5424 may be connected to a gas supply unit 5440 to be described later. Process gas may be supplied to the plasma generating space 5422 through the gas supply port 5424 . The process gas supplied to the plasma generating space 5422 may be uniformly distributed to the processing space 5200 through the baffle hole 5282 .

The gas supply unit 5440 may supply a process gas. The gas supply unit 5440 may be connected to the gas supply port 5424 . The process gas supplied by the gas supply unit 5440 may include fluorine and/or hydrogen.

The power application unit 5460 applies high frequency power to the plasma generating space 5422 . The power application unit 5460 may be a plasma source that generates plasma by exciting a process gas in the plasma generating space 5422 . The power application unit 5460 may include an antenna 5462 and a power source 5464 .

Antenna 5462 may be an inductively coupled plasma (ICP) antenna. The antenna 5462 may be provided in a coil shape. The antenna 5462 may wind the plasma chamber 5420 multiple times from the outside of the plasma chamber 5420 . The antenna 5462 may spiral around the plasma chamber 5420 multiple times from the outside of the plasma chamber 5420 .

The antenna 5462 may be wound around the plasma chamber 5420 in a region corresponding to the plasma generation space 5422 . One end of the antenna 5462 may be provided at a height corresponding to an upper region of the plasma chamber 5420 when viewed from a front end surface of the plasma chamber 5420 . The other end of the antenna 5462 may be provided at a height corresponding to a lower region of the plasma chamber 5420 when viewed from the front end of the plasma chamber 5420 .

A power source 5464 can apply power to the antenna 5462 . The power source 5464 may apply a high-frequency alternating current to the antenna 5462 . The high-frequency alternating current applied to the antenna 5462 may form an induced electric field in the plasma generating space 5422 . The process gas supplied into the plasma generation space 5422 may be converted into a plasma state by obtaining energy required for ionization from the induced electric field.

A power source 5464 may be coupled to one end of the antenna 5462. The power source 5464 may be connected to one end of an antenna 5462 provided at a height corresponding to the upper region of the plasma chamber 5420 . Also, the other end of the antenna 5462 may be grounded. The other end of the antenna 5462 provided at a height corresponding to the lower region of the plasma chamber 5420 may be grounded. However, the present invention is not limited thereto, and one end of the antenna 5462 may be grounded and the power source 5464 may be connected to the other end of the antenna 5462.

The diffusion chamber 560 may diffuse the plasma generated in the plasma generating chamber 540 into the processing space 5200 . The diffusion chamber 560 may have a diffusion chamber 5620 and an air flow guide member 6000 .

The diffusion chamber 5620 diffuses the plasma generated in the plasma generating chamber 540 into the processing space 5200 . The diffusion chamber 5620 has an interior space. An air flow guide member 6000 to be described later may be positioned in the inner space of the diffusion chamber 5620 . The diffusion chamber 5620 is located below the plasma chamber 5420. A diffusion chamber 5620 may be located between the housing 5220 and the plasma chamber 5420 . The housing 5220, the diffusion chamber 5620, and the plasma chamber 5420 may be sequentially positioned from the ground along the third direction 6.

An inner circumferential surface of the diffusion chamber 5620 may be provided with an insulator. For example, an inner circumferential surface of the diffusion chamber 5620 may be made of a material including quartz. The diffusion chamber 5620 may include a diffusion part 5624 and a connection part 5626 .

The diffusion part 5624 may extend downward from the plasma chamber 5420 . The diffusion part 5624 may extend downward from the plasma chamber 5420 to the connection part 5626 .

The diffusion part 5624 may have an open top and bottom shape. Openings may be formed at upper and lower ends of the diffusion part 5624 . The diffuser 5624 may have an inverted funnel shape. For example, the diffusion unit 5624 may be provided in a truncated cone shape. A diameter of an upper opening of the diffusion portion 5624 may be smaller than a diameter of a bottom opening of the diffusion portion 5624 . The diffusion part 5624 may have a diameter that increases from the top to the bottom. The diameter of the opening provided at the upper end of the diffusion part 5624 may have a diameter corresponding to that of the lower surface of the plasma chamber 5420 .

The connection part 5626 may connect the housing 5220 and the diffusion part 5624 . The connection part 5626 may be located below the diffusion part 5624 . A connector 5626 may be disposed between the housing 5220 and the diffuser 5624 . The connecting portion 5626 may include an upper wall 5626a and a lower wall 5626b.

Top wall 5626a extends from the bottom of diffuser 5624. The upper wall 5626a may extend in a direction away from the center of an opening formed at a lower end of the diffusion portion 5624 . The lower wall 5626b may extend downward from the side end of the upper wall 5626a. The lower wall 5626b may be connected to an upper end of the housing 5220 . Since the diffusion part 5624 and the housing 5220 are connected by the connection part 5626, the processing space 5200 may be sealed from the outside.

3 is a perspective view schematically showing the air flow guide member of FIG. 2 . Hereinafter, with reference to FIGS. 2 and 3 , an air flow guide member according to an embodiment of the present invention will be described in detail.

The air flow guide member 6000 is located inside the diffusion chamber 560 . An airflow guide member 6000 may be provided inside the diffusion chamber 5620. The air flow guide member 6000 may be positioned above the baffle 5280 . The air flow guide member 6000 may be disposed on top of the baffle 5820 to face the baffle 5820 . The air flow guide member 6000 may guide a flow direction of plasma generated in the plasma generating chamber 540 . The airflow guide member 6000 may guide a flow direction of airflow including particles generated by plasma.

The airflow guide member 6000 may include a guide member 6200 and a guide ring member 6800. The guide 6200 may partially change the flow direction of the plasma generated in the plasma generating chamber 640 . The guide 6200 may change a part of the flow direction of the air flow including the particles generated by the plasma.

The guide member 6200 may include an upper guide member 6400 and a lower guide member 6600 . An upper guide 6400 is provided inside the diffusion chamber 5620. The upper guide 6400 may be generally provided in an inverted funnel shape. When viewed from above, the upper guide 6400 may be provided in a substantially circular shape. The upper guide body 6400 may have a ceiling portion 6420 and a first inclined portion 6440.

When viewed from above, the ceiling portion 6420 may be provided in a generally circular shape. When viewed from above, the ceiling portion 6420 may be located in a region including a central region of the diffusion chamber 5620 . For example, the ceiling portion 6420 may have the same diameter as an opening formed at a lower end of the diffusion chamber 5620 when viewed from above.

When viewed from above, the first inclined portion 6440 may have a disk shape in which an area including a center thereof is open. The first inclined portion 6440 may be formed to extend from the ceiling portion 6420 . An upper end of the first inclined portion 6440 may be connected to a side end of the ceiling portion 6420 . An upper end of the first inclined portion 6440 may be interviewed along the circumferential direction of the ceiling portion 6420 . The first inclined portion 6440 may be spaced apart from the sidewall of the diffusion chamber 5620 in a direction toward the center of the diffusion chamber 5620 .

The first inclined portion 6440 may be formed to be inclined. The diameter of the first inclined portion 6440 may increase from the top to the bottom. For example, the first inclined portion 6440 may have the same slope as that of the diffusion chamber 5620 . Accordingly, the first inclined portion 6440 may be parallel to the sidewall of the diffusion chamber 5620 . However, it is not limited thereto, and the slope of the first slope 6440 and the slope of the diffusion chamber 5620 may be provided differently. The first inclined portion 6440 may be in line with a guide ring member 6800 to be described later. For example, the inner surface of the first inclined portion 6440 may be in line with the upper end of the guide ring member 6800 . The lower end of the first inclined portion 6440 may be located above the lower end of the diffusion chamber 5620 . The ceiling portion 6420 and the first inclined portion 6440 may be integrally formed.

The upper guide 6400 may be combined with the diffusion chamber 5620 to form the first passage P1. The upper guide 6400 may be combined with the sidewall of the diffusion chamber 5620 to form the first passage P1. For example, the first inclined portion 6440 may be combined with the sidewall of the diffusion chamber 5620 to form the first passage P1. The first passage P1 functions as a passage through which the plasma generated from the plasma generating chamber 540 flows. The first passage P1 functions as a passage through which an air flow including particles that may be generated during the plasma generation process flows.

The lower guide 6600 is provided inside the diffusion chamber 5620. The lower guide member 6600 may be positioned below the upper guide member 6400 . When viewed from above, the lower guide 6600 may be provided in a substantially circular shape. The lower guide body 6600 may include a bottom portion 6620 and a second inclined portion 6640.

The bottom portion 6620 may extend from the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . The bottom portion 6620 may horizontally extend from the lower end of the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . A bottom hole 6622 may be formed in the bottom portion 6620 . A plurality of bottom holes 6622 may be provided. The bottom holes 6622 may pass through the bottom portion 6620 in a vertical direction. The diameter of the bottom holes 6622 may be provided smaller than the diameter of the baffle hole 5282.

The second inclined portion 6640 may extend from the bottom portion 6620 . The second inclined portion 6640 may be formed to be inclined toward the center of the diffusion chamber 5620 from the bottom portion 6620 . For example, the second inclined portion 6640 may be formed to be inclined upward toward the center of the diffusion chamber 5620 from the bottom portion 6620 . The diameter of the second inclined portion 6640 may increase from the lower end to the upper end. For example, the second inclined portion 6640 may be provided with the same slope as the sidewall of the diffusion chamber 5620 . Accordingly, the second inclined portion 6640 may be parallel to the sidewall of the diffusion chamber 5620. However, it is not limited thereto, and the inclination of the second inclined portion 6640 and the inclination of the diffusion chamber 5620 may be provided differently.

An upper end of the second inclined portion 6640 may come into contact with a guide ring member 6800 to be described later. For example, the upper end of the second inclined portion 6640 may be in line with the lower end of the guide ring member 6800 . An upper end of the second inclined portion 6640 may be positioned higher than a lower end of the first inclined portion 6440 . The bottom portion 6620 and the second inclined portion 6640 may be integrally formed.

The lower guide member 6600 may be combined with the upper guide member 6400 to form the second passage P2. The lower guide 6600 may be combined with the first inclined portion 6440 to form the second passage P2. For example, the outer surface of the second inclined portion 6640 and the inner surface of the first inclined portion 6440 may be combined to form the second passage P2.

The second passage P2 functions as a passage through which the plasma guided through the first passage P1 and/or the air flow including the particles formed during the plasma generation flow. The second passage P2 functions as a passage for guiding the plasma flow introduced through the first passage P1 to an introduction hole 6820 of the guide ring member 6800 to be described later. For example, a part of the plasma stream passing through the first passage P1 flows out to a bottom hole 6622 described later, and the other part flows into the second passage P2.

FIG. 4 is a view schematically showing the guide ring member of FIG. 2 viewed from below. Hereinafter, a guide ring member according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 4 .

The guide ring member 6800 may guide an airflow of plasma flowing through the first passage P1 and the second passage P2 to the processing space 5200 . The guide ring member 6800 may guide an airflow including particles flowing through the first passage P1 and the second passage P2 to the edge area of the processing space 5200 . The guide ring member 6800 may be provided in a generally ring shape. The guide ring member 6800 may be provided in a ring shape having a predetermined thickness. For example, the guide ring member 6800 may be provided in a ring shape with upper and lower portions closed. For example, the guide ring member 6800 may be provided in a ring shape having a space therein.

The guide ring member 6800 can be located inside the diffusion chamber 5620. The guide ring member 6800 may be positioned below the upper guide body 6400. A guide ring member 6800 may be positioned above the lower guide body 6600. For example, the guide ring member 6800 may be disposed between the upper guide member 6400 and the lower guide member 6600 . The guide ring member 6800 may contact the upper guide body 6400. For example, the upper end of the guide ring member 6800 may come into direct contact with the inner surface of the first inclined portion 6440 . The guide ring member 6800 may contact the lower guide body 6600. For example, the lower end of the guide ring member 6800 may be in line with the upper end of the second inclined portion 6640 .

An inlet hole 6820 may be formed on a side surface of the guide ring member 6800 . The inflow hole 6820 may be formed on the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. A plurality of inlet holes 6820 may be provided. The inlet holes 6820 may be spaced apart from each other along the side circumference of the guide ring member 6800 . An airflow including plasma and/or particles formed during plasma generation is introduced into the inlet holes 6820 through the second passage P2 .

An outflow hole 6840 may be formed on a lower surface of the guide ring member 6800 . A plurality of outflow holes 6840 may be provided. The outflow holes 6840 may be spaced apart from each other at regular intervals on the lower surface of the guide ring member 6800 . The plasma stream introduced into the inner space of the guide ring member 6800 through the inlet hole 6820 may flow into the processing space 5200 through the outlet hole 6840 . For example, the air current flowing through the outlet hole 6840 may flow to the edge area of the processing space 5200 along the inclined surface provided in the second inclined portion 6640 . The diameter of the outflow holes 6840 may be provided smaller than the diameter of the baffle hole 5282.

The guide ring member 6800 according to an embodiment of the present invention described above has been described as having an outflow hole 6840 formed on the lower surface, but is not limited thereto. In addition, in the above-described embodiment of the present invention, the guide ring member 6800 provided in a ring shape with upper and lower surfaces closed has been described as an example. However, it is not limited thereto, and the guide ring member 6800 may be provided in a ring shape with an upper surface closed and a lower surface open. Accordingly, the plasma stream introduced into the inner space of the guide ring member 6800 through the introduction hole 6820 may flow into the processing space 5200 through the open lower surface of the guide ring member 6800 .

Referring back to FIG. 2 , the exhaust chamber 580 may exhaust process gases and impurities inside the process chamber 520 to the outside. The exhaust chamber 580 may exhaust impurities and particles generated during the processing of the substrate W to the outside of the process chamber 500 . The exhaust chamber 580 may exhaust the process gas supplied into the processing space 5200 to the outside. The exhaust chamber 580 may include an exhaust line 5820 and a pressure reducing member 5840 . The exhaust line 5820 may be connected to an exhaust hole 5222 formed on a bottom surface of the housing 5220 . The exhaust line 5820 may be connected to a pressure reducing member 5840 that provides pressure.

The pressure reducing member 5840 may provide pressure to the treatment space 5200 . The pressure reducing member 5840 may discharge plasma, impurities, and particles remaining in the processing space 5200 to the outside of the housing 5220 . Also, the pressure reducing member 5840 may provide pressure to maintain the pressure in the processing space 5200 at a preset pressure. The pressure reducing member 5840 may be a pump. However, it is not limited thereto, and the decompression member 5840 may be provided as a known device that provides decompression.

5 and 6 are diagrams schematically showing the flow of airflow in a process chamber in which the plasma treatment process of FIG. 2 is performed. Referring to FIGS. 5 and 6, the airflow and/or plasma including impurities or particles formed during the plasma generation process flows through the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide 6400. flow with For example, the airflow flows downward along an inclined surface formed on the first inclined portion 6440 . A part of the air flow passing through the first passage P1 passes through the bottom hole 6622. The airflow passing through the floor hole 6622 may flow along the inclined surface of the first passage P1 to the edge area of the processing space 5200 .

Another part of the air flow passing through the first passage P1 flows into the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. The airflow passing through the second passage P2 flows into the inflow hole 6820 formed in the guide ring member 6800. The airflow passing through the inflow hole 6820 passes through the outflow hole 6840 through the inner space formed in the guide ring member 6800 . The flow direction of the airflow flowing through the second passage P2 is changed while passing through the outflow hole 6840, and the airflow flows toward the edge area of the processing space 5200 by centrifugal force. In addition, the airflow passing through the outlet hole 6840 flows to the edge area of the processing space 5200 along the inclined surface formed on the second inclined portion 6640 .

According to one embodiment of the present invention described above, the plasma generated in the plasma generating chamber 540 flows through the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide member 6400 with each other. A portion of the plasma passing through the first passage P1 flows to the edge area of the processing space 5200 through the bottom hole 6622 . In addition, the other part of the plasma passing through the first passage P1 flows into the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. Plasma introduced through the second passage P2 flows to the edge region of the processing space 5200 through the inlet hole 6820 and the outlet hole 6840 sequentially.

Accordingly, concentration of plasma generated in the plasma generating chamber 540 to the area including the central area of the baffle 5280 can be minimized. When viewed from the top, concentration of plasma within the baffle 5280 positioned in an area overlapping the plasma generation chamber 540 may be minimized. Accordingly, thermal deformation of the baffle 5280 that may occur due to plasma concentration within the baffle 5280 may be minimized. By minimizing thermal deformation of the baffle, the replacement cycle of the baffle is relatively long, and accordingly, maintenance costs may be reduced. In addition, by minimizing thermal deformation of the baffle, particles generated in the process of deformation of the baffle may be reduced.

In addition, concentration of plasma in the central region including the center of the substrate W is minimized, and the plasma can be uniformly distributed on the substrate W. Accordingly, when processing the substrate W using plasma, the uniformity of the plasma processing acting on the substrate can be secured.

In addition, according to one embodiment of the present invention described above, the air current containing impurities or particles formed during the plasma generation process flows through the first passage P1. A portion of the airflow passing through the first passage P1 flows to the edge area of the processing space 5200 through the bottom hole 6622 . In addition, the other part of the airflow passing through the first passage P1 flows into the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. The air flow introduced through the second passage P2 flows to the edge area of the processing space 5200 through the inflow hole 6820 and the outflow hole 6840 sequentially.

An air flow including particles formed during the plasma generation process may be directed to an edge area of the processing space 5200 . Thus, flow to the substrate W supported on the support unit 5240 located in the processing space 5200 can be minimized. Landing of impurities or particles on the top of the substrate W may be minimized. Accordingly, the particles are seated on the upper portion of the substrate W, and thus the process defect rate generated during the plasma treatment process can be minimized.

FIG. 7 is a diagram schematically showing another embodiment of a process chamber performing the plasma treatment process of FIG. 2 . 8 is a perspective view schematically showing the air flow guide member of FIG. 7 . Among the descriptions of the process chamber according to an embodiment of the present invention described below, except for the air flow guide member, the process chamber according to the above-described embodiment is similar to the description, and in order to prevent duplication of contents, the following Description of overlapping configurations will be omitted.

Hereinafter, another embodiment of the process chamber will be described in detail with reference to FIGS. 7 and 8 . The process chamber 500 according to an embodiment of the present invention includes an air flow guide member 6000 .

The air flow guide member 6000 is located inside the diffusion chamber 560. An airflow guide member 6000 may be provided inside the diffusion chamber 5620. The air flow guide member 6000 may be positioned above the baffle 5280 . The air flow guide member 6000 may be disposed to face the baffle 5280 at an upper portion of the baffle 5280 . The air flow guide member 6000 may guide a flow direction of plasma generated in the plasma generating chamber 540 . The airflow guide member 6000 may guide a flow direction of airflow including particles generated by plasma.

The guide member 6200 may include an upper guide member 6400 and a lower guide member 6600 . An upper guide 6400 is provided inside the diffusion chamber 5620. When viewed from the front, the upper guide 6400 may be provided in a substantially trapezoidal shape. When viewed from above, the upper guide 6400 may be provided in a substantially circular shape. The upper guide body 6400 may have a ceiling portion 6420, a first inclined portion 6440, and a bottom portion 6460.

When viewed from above, the first inclined portion 6440 may have a disk shape in which an area including a center thereof is open. The first inclined portion 6440 may be formed by extending from the ceiling portion 6420 . An upper end of the first inclined portion 6440 may be connected to a side end of the ceiling portion 6420 . An upper end of the first inclined portion 6440 may be interviewed along the circumferential direction of the ceiling portion 6420 . The first inclined portion 6440 may be spaced apart from the sidewall of the diffusion chamber 5620 in a direction toward the center of the diffusion chamber 5620 .

The first inclined portion 6440 may be formed to be inclined. The diameter of the first inclined portion 6440 may increase from the top to the bottom. For example, the first inclined portion 6440 may have the same slope as that of the diffusion chamber 5620 . Accordingly, the first inclined portion 6440 may be parallel to the sidewall of the diffusion chamber 5620 . However, it is not limited thereto, and the slope of the first slope 6440 and the slope of the diffusion chamber 5620 may be provided differently. The lower end of the first inclined portion 6440 may be located above the lower end of the diffusion chamber 5620 . The lower end of the first inclined portion 6440 may be positioned above the lower end of the diffusion part 5624 . The lower end of the first inclined portion 6440 may be positioned above the upper end of the lower guide 6600 to be described later.

When viewed from the top, the bottom portion 6460 may be provided in a substantially disc shape. When viewed from above, the bottom portion 6460 may be located in an area including a central area of the diffusion chamber 5620 . The bottom portion 6460 may have a larger diameter than the ceiling portion 6420 . When viewed from above, the bottom portion 6460 may have a larger area than the ceiling portion 6420 . The bottom portion 6460 may extend from the first inclined portion 6440 . The bottom portion 6460 may horizontally extend from the lower end of the first inclined portion 6440 toward the center of the diffusion chamber 5620 . The bottom surface portion 6460 may be contacted and/or interviewed with a guide ring member 6800 described later. For example, the lower end of the bottom portion 6460 may be in line contact with and/or face the upper end of the guide ring member 6800 . The ceiling portion 6420, the first inclined portion 6440, and the bottom portion 6460 provided in the upper guide body 6400 may be integrally formed.

The lower guide 6600 is provided inside the diffusion chamber 5620. The lower guide member 6600 may be positioned below the upper guide member 6400 . When viewed from above, the lower guide 6600 may be provided in a substantially circular shape. For example, when viewed from above, the lower guide 6600 may be provided in a ring shape in which an area including a center is open.

The lower guide 6600 may extend from the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . The lower guide 6600 may horizontally extend from the lower end of the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . An upper end of the lower guide 6600 may be positioned above a lower end of the diffusion part 5624 . An upper end of the lower guide member 6600 may be positioned above a lower end of a guide ring member 6800 to be described later. An upper end of the lower guide body 6600 may be positioned below a lower end of the bottom part 6460 .

The lower end of the lower guide 6600 may be provided adjacent to the lower end of the diffusion part 5624 . For example, the lower end of the lower guide 6600 may be provided at the same height as the lower end of the diffusion part 5624 from the ground. A lower end of the lower guide member 6600 may be positioned adjacent to a lower end of the guide ring member 6800 . For example, the lower end of the lower guide member 6600 may be positioned at the same height as the lower end of the guide ring member 6800 from the ground.

A hole 6660 may be formed in the lower guide 6600 . A plurality of holes 6660 may be provided. The holes 6660 may pass through the lower guide body 6600 in a vertical direction. The diameter of the holes 6660 may be provided smaller than the diameter of the baffle hole 5282.

The lower guide member 6600 may be combined with the upper guide member 6400 to form the second passage P2. The lower guide 6600 may be combined with the bottom portion 6460 to form the second passage P2. For example, the upper surface of the lower guide 6600 and the lower surface of the bottom part 6460 may be combined with each other to form the second passage P2.

The guide ring member 6800 may guide an airflow of plasma flowing through the first passage P1 and the second passage P2 to the processing space 5200 . The guide ring member 6800 may guide an airflow including particles flowing through the first passage P1 and the second passage P2 to the edge area of the processing space 5200 . The guide ring member 6800 may be provided in a generally ring shape. For example, the guide ring member 6800 may be provided in a ring shape with upper and lower portions closed. For example, the guide ring member 6800 may be provided in a ring shape having a space therein.

The guide ring member 6800 can be located inside the diffusion chamber 5620. The guide ring member 6800 may be positioned below the upper guide body 6400. The guide ring member 6800 may come into contact with the bottom portion 6460 . For example, the upper end of the guide ring member 6800 may contact and/or face the lower end of the bottom surface portion 6460 . The guide ring member 6800 may contact the lower guide body 6600. For example, the side surface of the guide ring member 6800 may face the inner surface of the lower guide member 6600. A lower end of the guide ring member 6800 may be positioned adjacent to a lower end of the lower guide member 6600 . For example, the lower end of the guide ring member 6800 may be positioned at the same height as the lower end of the lower guide member 6600 from the ground. An upper end of the guide ring member 6800 is positioned higher than an upper end of the lower guide member 6600 .

An inlet hole 6820 may be formed on a side surface of the guide ring member 6800 . The inflow hole 6820 may be formed on the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. For example, the inlet hole 6820 may be provided between the lower end of the bottom part 6460 and the upper end of the lower guide member 6600 on the side of the guide ring member 6800 . A plurality of inlet holes 6820 may be provided. The inlet holes 6820 may be spaced apart from each other along the side circumference of the guide ring member 6800 . An airflow including plasma and/or particles formed during plasma generation is introduced into the inlet holes 6820 through the second passage P2 .

An outflow hole 6840 may be formed on a lower surface of the guide ring member 6800 . A plurality of outflow holes 6840 may be provided. The outflow holes 6840 may be spaced apart from each other at regular intervals on the lower surface of the guide ring member 6800 . The plasma stream introduced into the inner space of the guide ring member 6800 through the inlet hole 6820 may flow into the processing space 5200 through the outlet hole 6840 . The diameter of the outflow holes 6840 may be provided smaller than the diameter of the baffle hole 5282.

The guide ring member 6800 according to an embodiment of the present invention described above has been described as having an outflow hole 6840 formed on the lower surface, but is not limited thereto. In addition, in the above-described embodiment of the present invention, the guide ring member 6800 provided in a ring shape with upper and lower surfaces closed has been described as an example. However, it is not limited thereto, and the guide ring member 6800 may be provided in a ring shape with an upper surface closed and a lower surface open. Accordingly, the air flow of the plasma introduced into the inner space of the guide ring member 6800 through the introduction hole 6820 may flow into the processing space 5200 through the open lower surface of the guide ring member 6800 .

FIG. 9 is a diagram schematically showing the flow of airflow in a process chamber in which the plasma treatment process of FIG. 7 is performed. Referring to FIG. 9 , air flow and/or plasma including impurities or particles formed during the plasma generation process flows through the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide 6400 with each other. . For example, the airflow flows downward along an inclined surface formed on the first inclined portion 6440 . A part of the airflow passing through the first passage P1 passes through the hole 6660. The airflow passing through the hole 6660 may flow to the edge area of the processing space 5200 by flowing along the inclined surface of the first passage P1.

Another part of the air flow passing through the first passage P1 flows into the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. The airflow passing through the second passage P2 flows into the inflow hole 6820 formed in the guide ring member 6800. The airflow passing through the inflow hole 6820 passes through the outflow hole 6840 through the inner space formed in the guide ring member 6800 . The flow direction of the airflow flowing through the second passage P2 is changed while passing through the outflow hole 6840, and the airflow flows toward the edge area of the processing space 5200 by centrifugal force.

According to one embodiment of the present invention described above, the plasma generated in the plasma generating chamber 540 flows through the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide member 6400 with each other. A portion of the plasma passing through the first passage P1 flows to the edge region of the processing space 5200 through the hole 6660 . In addition, the other part of the plasma passing through the first passage P1 flows into the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. Plasma introduced through the second passage P2 flows to the edge region of the processing space 5200 through the inlet hole 6820 and the outlet hole 6840 sequentially.

In addition, according to one embodiment of the present invention described above, the air current containing impurities or particles formed during the plasma generation process flows through the first passage P1. A portion of the airflow passing through the first passage P1 flows to the edge area of the processing space 5200 through the hole 6660 . In addition, the other part of the airflow passing through the first passage P1 flows into the second passage P2 formed by combining the upper guide member 6400 and the lower guide member 6600 with each other. The air flow introduced through the second passage P2 flows to the edge area of the processing space 5200 through the inflow hole 6820 and the outflow hole 6840 sequentially.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The foregoing embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in specific application fields and uses of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Claims

In the apparatus for processing the substrate,

a processing room providing a processing space for processing substrates;

a plasma generating chamber generating plasma supplied from a process gas to the processing space;

a diffusion chamber for diffusing the plasma generated in the plasma generating chamber into the processing space;

a baffle installed at an upper end of the processing chamber and having a plurality of baffle holes; and

An air flow guide member provided inside the diffusion chamber to guide a flow direction of the plasma,

The air flow guide member includes a guide body through which a part of the flow direction of the plasma is changed;

The guide is

an upper guide member combined with the sidewall of the diffusion chamber to form a first passage; and

and a lower guide member positioned below the upper guide member and combined with the upper guide member to form a second passage.
According to claim 1,

The lower guide,

a bottom portion extending horizontally from the lower end of the sidewall of the diffusion chamber toward the center of the diffusion chamber; and

and an inclination portion provided to be inclined upwardly from the bottom portion toward the center of the diffusion chamber.
According to claim 2,

A substrate processing apparatus wherein a bottom hole penetrating the bottom portion in a vertical direction is formed in the bottom portion.
According to claim 1,

The upper guide,

A substrate processing apparatus provided in parallel with the sidewall of the diffusion chamber.
According to claim 2,

The inclined part,

A substrate processing apparatus provided in parallel with the sidewall of the diffusion chamber.
According to claim 3,

The air flow guide member,

Further comprising a guide ring member provided in a ring shape to guide the air flow of the plasma flowing through the first passage and the second passage to the processing space,

The upper end of the guide ring member is in line contact with the inner surface of the upper guide member, and the lower end of the guide ring member is in line with the upper end of the inclined portion.
According to claim 6,

An inlet hole through which the plasma stream introduced through the second passage is formed along a circumference of a side surface of the guide ring member.
According to claim 7,

The lower surface of the guide ring member is open substrate processing apparatus.
According to claim 7,

At least one outlet hole through which the air flow of the plasma introduced from the inlet hole is formed on a lower surface of the guide ring member.
According to claim 9,

The bottom hole and the outflow hole are provided with a smaller diameter than the baffle hole.
In the apparatus for processing the substrate,

a processing room providing a processing space for processing substrates;

a plasma generating chamber generating plasma supplied from a process gas to the processing space;

a diffusion chamber for diffusing the plasma generated in the plasma generating chamber into the processing space;

a baffle installed at an upper end of the processing chamber and having a plurality of baffle holes; and

An air flow guide member provided inside the diffusion chamber to guide a flow direction of the plasma,

The air flow guide member,

A substrate processing apparatus comprising a guide ring member provided in a ring shape and installed inside the diffusion chamber.
According to claim 11,

The substrate processing apparatus of claim 1 , wherein an inlet hole through which the air flow of the plasma is introduced is formed along a circumference of the side surface of the guide ring member.
According to claim 12,

The lower surface of the guide ring member is open substrate processing apparatus.
According to claim 12,

At least one outlet hole through which the air flow of the plasma introduced from the inlet hole is formed on a lower surface of the guide ring member.
According to claim 14,

The air flow guide member includes a guide body,

The guide is

an upper guide body that forms a first passage in combination with the sidewall of the diffusion chamber and guides a portion of the plasma flowing into the diffusion chamber; and

A substrate including a lower guide member located below the upper guide member, forming a second passage in combination with the upper guide member, and guiding the plasma guided from the first passage through the second passage into the inlet hole. processing unit.
According to claim 15,

The lower guide,

a bottom portion extending horizontally from the lower end of the sidewall of the diffusion chamber toward the center of the diffusion chamber; and

and an inclination portion provided to be inclined upwardly from the bottom portion toward the center of the diffusion chamber.
According to claim 16,

A substrate processing apparatus wherein a bottom hole penetrating the bottom portion in a vertical direction is formed in the bottom portion.
According to claim 17,

The upper end of the guide ring member is in line with the inner surface of the upper guide member,

The lower end of the guide ring member is in line with the upper end of the inclined portion.
According to claim 16,

The upper guide and the inclined portion are provided parallel to the sidewall of the diffusion chamber.
According to any one of claims 11 to 19,

The diffusion chamber is provided in an inverted funnel shape.