CN116791065A - Diffusion member and semiconductor process equipment - Google Patents
Diffusion member and semiconductor process equipment Download PDFInfo
- Publication number
- CN116791065A CN116791065A CN202310809470.1A CN202310809470A CN116791065A CN 116791065 A CN116791065 A CN 116791065A CN 202310809470 A CN202310809470 A CN 202310809470A CN 116791065 A CN116791065 A CN 116791065A
- Authority
- CN
- China
- Prior art keywords
- flow
- diffuser
- diffusion
- side wall
- diversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000009792 diffusion process Methods 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000007704 transition Effects 0.000 claims description 27
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 55
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The embodiment of the application provides a diffusion member and semiconductor process equipment, and relates to the technical field of semiconductor manufacturing. The diffusion component is used for being installed at the air inlet so as to conduct flow guiding and flow equalizing. The diffusion component comprises a diffusion piece, the diffusion piece is provided with a flow guide surface, a plurality of flow guide channels are arranged on the diffusion piece at intervals along the circumferential direction of the diffusion piece, and the flow guide channels penetrate through the diffusion piece. The process gas flowing in from the gas inlet can flow along the guide surface and the guide channel. Which can improve uniformity of a plating film thickness of semiconductor processing equipment.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a diffusion member and semiconductor process equipment.
Background
With the continuous progress of technology, semiconductor technology is becoming mature and popular, and products are commercialized on a large scale. Chemical vapor deposition is an important manufacturing method in semiconductor manufacturing. It is a method that utilizes gas phase chemical reactions to produce the desired material or coating. It is mainly by introducing proper process gas into the reaction chamber, and controlling the reaction condition and temperature to make it produce chemical reaction and form film on the substrate.
In semiconductor manufacturing, uniformity of process gas in a process chamber directly affects uniformity of film thickness. In the prior art, in order to ensure uniformity of process gas in a process chamber, a diffusion member is generally installed at an air inlet of the process chamber to realize uniformity of a process medium.
However, this approach can result in a significant amount of process gas being directed to the outer periphery, resulting in a thinner film in the central region of the substrate and thicker film in the edge regions, affecting the quality of the coating.
Disclosure of Invention
The object of the present application includes, for example, providing a diffusion member and a semiconductor processing apparatus capable of improving uniformity of a plating film thickness of the semiconductor processing apparatus.
Embodiments of the application may be implemented as follows:
in a first aspect, the present application provides a diffuser element for installation in an air inlet for flow diversion and equalization, comprising a diffuser;
the diffuser has a flow guiding surface;
a plurality of diversion channels are arranged on the upper edge of the diffusion piece at intervals along the circumferential direction of the diffusion piece, and penetrate through the diffusion piece;
the process gas flowing in from the gas inlet can flow along the diversion surface and the diversion channel.
In an alternative embodiment, the diffusing piece comprises a first diversion part and a second diversion part protruding outwards from the first diversion part, the diversion surface comprises a first diversion surface positioned on the first diversion part and a second diversion surface positioned on the second diversion part, and the first diversion surface is connected with the second diversion surface;
the slope of the first guide surface is larger than that of the second guide surface;
the process gas flowing in from the gas inlet may flow through the first and second guide surfaces in sequence.
In an alternative embodiment, the flow guiding channel is a flow guiding hole, and the flow guiding hole is disposed in the first flow guiding portion and penetrates through the first flow guiding portion.
In an alternative embodiment, the number of the diversion holes is 6, and the diversion holes are equally spaced on the first diversion part.
In an alternative embodiment, a plurality of transition grooves are circumferentially spaced apart from the first flow guiding portion, the transition grooves are disposed along the height direction of the first flow guiding portion, the outer sides of the transition grooves penetrate through the first flow guiding surface, and the flow guiding holes are disposed on the bottom wall of the transition grooves in a one-to-one correspondence manner and penetrate through the first flow guiding portion.
In an alternative embodiment, the transition groove comprises a first side wall, a transition wall and a second side wall, the first side wall and the second side wall are connected through the transition wall, the clamping value between the first side wall and the second side wall is 25-35 degrees, and the distance between the first side wall and the second side wall gradually increases towards a direction away from the center of the diffusion piece.
In an alternative embodiment, the flow guiding channel is a flow guiding groove, and the flow guiding channel is arranged along the height direction of the diffusion member, penetrates through the diffusion member, and extends towards the direction of the second flow guiding portion to penetrate through the outer periphery of the second flow guiding portion.
In an alternative embodiment, the diversion trench comprises a third side wall and a fourth side wall which are oppositely arranged;
the third side wall and the fourth side wall gradually increase in a direction away from the center of the diffuser.
In an alternative embodiment, three diversion trenches are arranged at equal intervals, and the included angle between the third side wall and the fourth side wall ranges from 40 degrees to 55 degrees; and/or the number of the groups of groups,
the number of the diversion trenches is six, the six diversion trenches are arranged at equal intervals, and the value range of the included angle between the third side wall and the fourth side wall is 25-35 degrees.
In an alternative embodiment, a diffusion cavity is arranged at the bottom of the diffusion piece, and the flow guide channel is communicated with the diffusion cavity.
In an alternative embodiment, the diffusion chamber includes a pressure stabilizing chamber and a diffusion chamber;
the pressure stabilizing cavity is cylindrical and is communicated with the diversion channel;
the diffuser chamber gradually increases toward the bottom of the diffuser.
In a second aspect, the present application provides a semiconductor processing apparatus, including a body, a cover, a flow equalization plate, and a diffusion member according to any of the embodiments above;
the body is provided with a process cavity, the cover body is arranged at an opening of the process cavity, the flow equalizing plate is arranged at the cover body, and a plurality of flow equalizing holes are arranged on the flow equalizing plate;
the cover is provided with an air inlet, and the diffuser is mounted to the air inlet.
The diffusion member and the semiconductor process equipment provided by the embodiment of the application have the beneficial effects that:
according to the embodiment, the flow guide channel is arranged on the diffusion piece, so that the process gas flowing in from the air inlet can be partially guided outwards through the flow guide surface and enter the process cavity, and partially passes through the flow guide channel and enters the central area of the process cavity, and therefore uniformity of the process gas in the process cavity can be improved, and uniformity of thickness of a film layer of the coating film is better.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present application;
FIG. 2 is a schematic view of a diffuser element according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of a first direction of the diffusion member of FIG. 2;
FIG. 4 is a schematic cross-sectional view of the diffusion member of FIG. 2 in a first alternative orientation;
FIG. 5 is a schematic view of a diffuser element according to another embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of the diffusion member of FIG. 5;
FIG. 7 is a process fluid simulation diagram of a process chamber of a semiconductor processing apparatus provided in accordance with an embodiment of the present application;
fig. 8 is a process gas distribution diagram of a process chamber of a semiconductor processing apparatus according to an embodiment of the present application.
Icon: a 100-diffusion member; 110-a diffuser; 111-a flow guiding surface; 113-a diversion channel; 115-a first deflector; 117-a second deflector; 119-a first flow guiding surface; 121-a second flow guiding surface; 123-a third flow guiding surface; 125-deflector holes; 127-transition groove; 129-a first sidewall; 131-transition wall; 133-a second sidewall; 135-diversion trenches; 137-a third sidewall; 139-a fourth sidewall; 141-a diffusion chamber; 143-a regulated cavity; 145-diffusion chamber; 150-mounting blocks; 300-semiconductor process equipment; 310-body; 311-process chamber; 330-cover; 331-an air inlet; 333-diffusion cell; 350-a flow equalization plate; 351-flow equalizing holes.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
Examples
Referring to fig. 1, the present embodiment provides a semiconductor processing apparatus 300 capable of improving uniformity of thickness of a film of a plating film.
In this embodiment, the semiconductor process apparatus 300 includes a body 310, a cover 330, a flow equalization plate 350, and a diffusion member 100. The body 310 has a process chamber 311. The cover 330 is installed at the opening of the process chamber 311, the flow equalizing plate 350 is installed at the cover 330, and a plurality of flow equalizing holes 351 are arranged on the flow equalizing plate 350, and the cover 330 is installed at the opening of the process chamber 311. The cover 330 is provided with an air inlet 331, and the diffusion member 100 is correspondingly installed at the air inlet 331. The body 310 is used for providing the process chamber 311 and maintaining the temperature, pressure, etc. of the process chamber 311 within preset ranges. The flow equalization plate 350 and the diffusion member 100 are configured to allow the process gas flowing into the gas leak to flow uniformly into the process chamber 311. The process gas flowing into the gas inlet 331 is diffused by the diffusion member 100, and flows into the process chamber 311 after being equalized by the equalizing plate 350.
In the present embodiment, the cover 330 has a flared diffusing slot 333. The air inlet 331 corresponds to the center of the diffusion groove 333. The diffusion member 100 is fixedly mounted at the near-air port, but the gas can be blown to the flow guiding surface 111 of the diffusion member 100 through the gas inlet 331, thereby being matched with the wall of the diffusion slot 333 to feed the gas into the process chamber 311.
In the present embodiment, the taper surface angle of the diffusion groove 333 is in the range of 110 ° to 140 °. And may be preferably 135 in some embodiments.
Referring to fig. 1 and 2, in the present embodiment, the diffusion member 100 includes a diffuser 110. The diffuser 110 is fixedly installed at the air inlet 331. The diffuser 110 has a flow guiding surface 111. A plurality of flow guiding channels 113 are arranged on the upper edge of the diffuser 110 at intervals along the circumferential direction of the diffuser 110, and the flow guiding channels 113 penetrate through the diffuser 110. The process gas flowing in through the gas inlet 331 may flow along the guide surface 111 and the guide passage 113.
Referring to fig. 7, in this embodiment, by providing the flow guiding channel 113 on the diffuser 110, a portion of the process gas flowing in from the gas inlet 331 can be guided to the process chamber 311 through the flow guiding surface 111, and a portion of the process gas can enter the central region of the process chamber 311 through the flow guiding channel 113, so that the uniformity of the process gas in the process chamber 311 can be improved, and the uniformity of the thickness of the film layer of the coating film is better.
It should be further noted that the diffuser 110 is fixedly installed at the gas inlet 331 in this embodiment, so that the uniformity of the process gas and the generation of particulate matters can be avoided after the diffuser 110 rotates.
In this embodiment, the diffusing element 110 includes a first guiding portion 115 and a second guiding portion 117 protruding from the first guiding portion 115, and the guiding surface 111 includes a first guiding surface 119 located on the first guiding portion 115 and a second guiding surface 121 located on the second guiding portion 117, where the first guiding surface 119 and the second guiding surface 121 are connected; the slope of the first guide surface 119 is greater than the slope of the second guide surface 121. The process gas flowing in through the gas inlet 331 may sequentially flow through the first and second guide surfaces 119 and 121.
In this embodiment, the diffusing member 110 is configured to have two portions with different slopes, so that diffusion and flow guiding can be better achieved. In particular, the slope of the second flow guiding surface 121 is smaller, so that the process gas of the gas inlet 331 is prevented from directly blowing to the process chamber 311 without being guided. The slope of the first diversion surface 119 is set to be larger, so that wind resistance can be reduced, and the influence of turbulence on the air inlet quantity can be reduced.
In the present embodiment, the diffuser 110 is fixedly installed on the air inlet 331 by a screw installation manner, but the air inlet 331 is not blocked, and the process gas flowing into the air inlet 331 can be blown onto the flow guiding surface 111 of the diffuser 110 through the air inlet 331.
In this embodiment, to avoid forming turbulence between the first and second guide surfaces 119 and 121, a third guide surface 123 is further provided to transition between the first and second guide surfaces 119 and 121. The third guiding surface 123 is an arc surface, and the slope gradually changes from the slope of the first guiding surface 119 to the slope of the second guiding surface 121. This avoids the formation of turbulence, which can lead to particle generation and affect the uniformity of the process gas within the process chamber 311.
In this embodiment, the angle of the conical surface of the first flow guiding surface 119 ranges from 50 ° to 70 °. In some embodiments, it may be preferable that the angle of the conical surface of the second guide surface 121 is 120 ° to 140 °. In some embodiments, 130 ° may be preferred.
In this embodiment, the second flow guiding portion 117 corresponds to a skirt edge disposed at the bottom of the first flow guiding portion 115, so as to achieve the purpose of final flow guiding, and the outer periphery of the second flow guiding portion 117 is rounded.
Referring to fig. 3 and 4, in some embodiments of the application, the diversion channel 113 is a diversion hole 125, and the diversion hole 125 is disposed on the first diversion portion 115 and penetrates the first diversion portion 115. And the flow distribution can be conveniently realized by setting the size of the holes.
In this embodiment, the deflector holes 125 are provided, so that a part of the process gas can flow into the central region of the chamber 311 through the deflector holes 125 and flow into the chamber through the flow equalizing plate 350.
In the present embodiment, there are 6 guide holes 125, and the guide holes are equally spaced apart from the first guide portion 115.
The present embodiment provides 6 deflector holes 125 at equal intervals so that the gas distribution is more uniform.
In this embodiment, a plurality of transition grooves 127 are circumferentially spaced apart from the first flow guiding portion 115, the transition grooves 127 are disposed along the height direction of the first flow guiding portion 115, and the outer sides of the transition grooves 127 penetrate through the first flow guiding surface 119, and the flow guiding holes 125 are disposed on the bottom wall of the transition grooves 127 in a one-to-one correspondence manner and penetrate through the first flow guiding portion 115.
In this embodiment, the transition groove 127 is disposed on a diversion portion, and the diversion hole 125 is disposed on the bottom wall of the diversion groove 135, so that the gas is conveniently diverted by using the transition groove 127. The side wall of the transition groove 127 can penetrate through the first diversion surface 119 to perform transition, so as to avoid forming turbulence and affecting the uniformity of the gas.
In the present embodiment, the transition groove 127 includes a first side wall 129, a transition wall 131, and a second side wall 133, the first side wall 129 and the second side wall 133 are connected by the transition wall 131, the value of the nip between the first side wall 129 and the second side wall 133 is 25 ° to 35 °, and the distance between the first side wall 129 and the second side wall 133 gradually increases in a direction away from the center of the diffuser 110.
In this embodiment, an included angle of 25 ° -30 ° is formed between the low pressure side wall and the second side wall 133, so that flow guiding can be facilitated.
Referring to fig. 5 and 6, in some embodiments of the application, the diversion channel 113 is a diversion trench 135, and the diversion trench 135 is disposed along the height direction of the diffuser 110, penetrates the diffuser 110, and extends to the direction of the second diversion portion 117 to penetrate the outer periphery of the second diversion portion 117.
The present embodiment is configured such that the diffuser 110 is divided into several small guide surfaces 111 by the guide grooves 135, so that the diffuser 110 forms a petal-shaped structure. And the flow guide grooves 135 are thus spaced apart from the flow guide grooves 135. The flow guide grooves 135 may deliver process gas to a central region of the chamber 311 and the flow guide surface 111 may deliver process gas to an edge region of the chamber 311.
Specifically, the flow guide groove 135 includes a third side wall 137 and a fourth side wall 139 disposed opposite to each other. The third and fourth sidewalls 137 and 139 are gradually increased in a direction away from the center of the diffuser 110. The number of the diversion trenches 135 is three, the diversion trenches 135 are arranged at equal intervals, and the included angle between the third side wall 137 and the fourth side wall 139 is 40-55 degrees.
In the present embodiment, the distance between the third side wall 137 and the fourth side wall 139 is set to 40 to 55 ° so as to be gradually increased so as to correspond to the corresponding area, whereby uniformity can be improved.
In this embodiment, the third side wall 137 and the fourth side wall 139 are in a generally tangential relationship by a rounded transition.
In other embodiments of the present application, there are six channels 135, the six channels 135 are equally spaced, and the included angle between the third side wall 137 and the fourth side wall 139 ranges from 25 ° to 35 °.
In this embodiment, the bottom of the diffuser 110 is provided with a diffusion chamber 141, and the flow guide channel 113 communicates with the diffusion chamber 141.
Referring to fig. 4 and 6, in the present embodiment, a diffusion chamber 141 is disposed at the bottom of the diffuser 110, so that the process gas flowing into the bottom of the diffuser 110 from the flow guiding channel 113 can be dispersed in one step by the steady flow and the flow guiding of the diffusion chamber 141, so that the process gas is more uniformly dispersed.
In this embodiment, the diffusion chamber 141 includes a plenum 143 and a diffuser 145. The pressure stabilizing cavity 143 is cylindrical, and the pressure stabilizing cavity 143 is communicated with the guided channel 113. The diffuser cavity 145 gradually increases toward the bottom of the diffuser 110.
In this embodiment, the diffusion chamber 141 is configured as a cylindrical pressure stabilizing chamber 143 and a gradually increasing diffusion chamber 145, so that the process gas can be stabilized after flowing into the pressure stabilizing chamber 143 through the plurality of flow guiding channels 113, and the process gas flowing into the plurality of gas flow channels can be prevented from forming turbulence and vortex. The pressure stabilizing chamber 143 is provided with a gradually increasing diffusion chamber 145 below, so that the pressure of the process gas can be reduced and diffusion can be formed, the process gas can be prevented from being directly blown onto the wafer substrate, and the gas in the process chamber 311 can be more uniform. This arrangement also reduces the height of the process chamber 311, thereby enabling miniaturization of the semiconductor process apparatus 300.
In this embodiment, the height of the plenum 143 is in the range of 1mm to 5mm and the height of the diffuser 145 is in the range of 5mm to 10mm. The expansion angle of the diffuser 145 may take any of a range of 15-45.
In this embodiment, the distance between the bottom surface of the diffuser 110 and the flow equalization plate 350 is any value ranging from 20mm to 50 mm. In this way, the gas can flow into the process chamber 311 through the through holes on the flow equalizing plate 350 after being uniformly diffused, so that the uniformity of the process gas in the process chamber 311 can be ensured, and a film layer with more uniform shape can be deposited on the substrate.
Referring to fig. 4, in the present embodiment, when the diversion channel 113 is the diversion hole 125, the outer sidewall of the diversion hole 125 is an arc surface and is on the same cylindrical surface with the sidewall of the pressure stabilizing section. In this way, the process gas of the flow guiding channel 113 can flow into the pressure stabilizing cavity 143 in an adhering manner, so that turbulence can be avoided.
Referring to fig. 6 and 8, in the present embodiment, when the flow guiding channel 113 is the flow guiding groove 135, the process gas guided downward by the flow guiding groove 135 can be gradually diffused and can be uniformly distributed through the pressure stabilizing cavity 143 and the diffusion cavity 145. It is possible to avoid the formation of a vortex in the center of the flow equalization plate 350 in both process gases.
In this embodiment, the angle of the conical surface of the side wall of the diffusion cavity 141 is the same as the angle of the conical surface of the first guiding portion 115, so that the inner and outer two-phase air flows in a parallel direction flow to the flow equalizing plate 350, and turbulence can be avoided.
Referring to fig. 1, in the present embodiment, the diffusing member 100 further includes a mounting block 150, and the diffusing element 110 is detachably mounted on the air inlet 331 of the cover 330 through the mounting block 150.
In summary, the diffusion member 100 and the semiconductor processing apparatus 300 provided in the embodiments of the present application have the following beneficial effects and working principles:
in this embodiment, the diffusion member 110 is provided with the flow guide channels 113, so that the process gas flowing in from the gas inlet 331 can be partially guided to the process chamber 311 through the flow guide surface 111, and partially enter the central region of the process chamber 311 through the flow guide channels 113, thereby improving the uniformity of the process gas in the process chamber 311 and making the uniformity of the thickness of the film layer of the coating film better.
The present application is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (12)
1. A diffuser element for installation in an air inlet for flow diversion and equalization, comprising a diffuser element;
the diffuser has a flow guiding surface;
a plurality of diversion channels are arranged on the upper edge of the diffusion piece at intervals along the circumferential direction of the diffusion piece, and penetrate through the diffusion piece;
the process gas flowing in from the gas inlet can flow along the diversion surface and the diversion channel.
2. The diffusing member of claim 1, wherein said diffuser comprises a first flow-guiding portion and a second flow-guiding portion protruding outwardly from said first flow-guiding portion, said flow-guiding surfaces comprising a first flow-guiding surface at said first flow-guiding portion and a second flow-guiding surface at said second flow-guiding portion, said first flow-guiding surface and said second flow-guiding surface being connected;
the slope of the first guide surface is larger than that of the second guide surface;
the process gas flowing in from the gas inlet may flow through the first and second guide surfaces in sequence.
3. The diffusing member of claim 2, wherein the flow-directing channel is a flow-directing hole disposed in and extending through the first flow-directing portion.
4. A diffusing member according to claim 3, wherein there are 6 of said flow-directing holes equally spaced from said first flow-directing portions.
5. A diffusing member according to claim 3, wherein a plurality of transition grooves are provided at intervals in the circumferential direction of the first flow guiding portion, the transition grooves are provided along the height direction of the first flow guiding portion, the outer sides of the transition grooves penetrate through the first flow guiding surface, and the flow guiding holes are provided in the bottom walls of the transition grooves in one-to-one correspondence and penetrate through the first flow guiding portion.
6. The diffuser element of claim 5, wherein said transition groove comprises a first side wall, a transition wall and a second side wall, said first and second side walls being connected by said transition wall, and wherein the pinch value between said first and second side walls is between 25 ° and 35 °, and wherein the distance between said first and second side walls increases progressively away from the center of said diffuser.
7. The diffuser element of claim 2, wherein the flow-directing channel is a flow-directing channel disposed along a height of the diffuser and extending through the diffuser and through an outer periphery of the second flow-directing portion in a direction toward the second flow-directing portion.
8. The diffusing member of claim 7, wherein said channels include third and fourth oppositely disposed sidewalls;
the third side wall and the fourth side wall gradually increase in a direction away from the center of the diffuser.
9. The diffusion member according to claim 8, wherein three of the flow guide grooves are provided at equal intervals, and the included angle between the third side wall and the fourth side wall ranges from 40 ° to 55 °; and/or the number of the groups of groups,
the number of the diversion trenches is six, the six diversion trenches are arranged at equal intervals, and the value range of the included angle between the third side wall and the fourth side wall is 25-35 degrees.
10. A diffusing member according to any one of claims 1-9, wherein the bottom of said diffuser is provided with a diffusing cavity, said flow-guiding channel communicating with said diffusing cavity.
11. The diffusion member of claim 10, wherein the diffusion chamber comprises a plenum and a diffuser;
the pressure stabilizing cavity is cylindrical and is communicated with the diversion channel;
the diffuser chamber gradually increases toward the bottom of the diffuser.
12. A semiconductor processing apparatus comprising a body, a cover, a flow equalization plate, and the diffusion member of any of claims 1-11;
the body is provided with a process cavity, the cover body is arranged at an opening of the process cavity, the flow equalizing plate is arranged at the cover body, and a plurality of flow equalizing holes are arranged on the flow equalizing plate;
the cover is provided with an air inlet, and the diffuser is mounted to the air inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310809470.1A CN116791065B (en) | 2023-07-03 | 2023-07-03 | Diffusion member and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310809470.1A CN116791065B (en) | 2023-07-03 | 2023-07-03 | Diffusion member and semiconductor process equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116791065A true CN116791065A (en) | 2023-09-22 |
| CN116791065B CN116791065B (en) | 2024-06-14 |
Family
ID=88036389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310809470.1A Active CN116791065B (en) | 2023-07-03 | 2023-07-03 | Diffusion member and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116791065B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002024985A1 (en) * | 2000-09-22 | 2002-03-28 | Aixtron Ag | Gas inlet mechanism for cvd-method and device |
| US20120174866A1 (en) * | 2011-01-11 | 2012-07-12 | Snt. Co., Ltd. | Apparatus for chemical vapor deposition |
| CN208903980U (en) * | 2018-11-09 | 2019-05-24 | 长鑫存储技术有限公司 | A kind of gaseous diffuser |
| CN111394714A (en) * | 2020-04-21 | 2020-07-10 | 重庆臻宝实业有限公司 | Chemical deposition gas distribution structure and device thereof |
| KR20200134633A (en) * | 2019-05-23 | 2020-12-02 | 중앙대학교 산학협력단 | Perforated plate for semiconductor process to improve flow distribution |
| US20210332480A1 (en) * | 2020-04-23 | 2021-10-28 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Flow guide apparatus and vapor deposition device |
| TWI782762B (en) * | 2021-10-21 | 2022-11-01 | 天虹科技股份有限公司 | Diffusion mechanism and thin-film-deposition equipment using the same |
| WO2023027342A1 (en) * | 2021-08-25 | 2023-03-02 | 피에스케이 주식회사 | Substrate processing apparatus |
| CN115852341A (en) * | 2022-12-23 | 2023-03-28 | 拓荆科技股份有限公司 | Flow guide device in semiconductor spray plate |
-
2023
- 2023-07-03 CN CN202310809470.1A patent/CN116791065B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002024985A1 (en) * | 2000-09-22 | 2002-03-28 | Aixtron Ag | Gas inlet mechanism for cvd-method and device |
| US20120174866A1 (en) * | 2011-01-11 | 2012-07-12 | Snt. Co., Ltd. | Apparatus for chemical vapor deposition |
| CN102586755A (en) * | 2011-01-11 | 2012-07-18 | Snt能源技术有限公司 | Apparatus for chemical vapor deposition |
| CN208903980U (en) * | 2018-11-09 | 2019-05-24 | 长鑫存储技术有限公司 | A kind of gaseous diffuser |
| KR20200134633A (en) * | 2019-05-23 | 2020-12-02 | 중앙대학교 산학협력단 | Perforated plate for semiconductor process to improve flow distribution |
| CN111394714A (en) * | 2020-04-21 | 2020-07-10 | 重庆臻宝实业有限公司 | Chemical deposition gas distribution structure and device thereof |
| US20210332480A1 (en) * | 2020-04-23 | 2021-10-28 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Flow guide apparatus and vapor deposition device |
| WO2023027342A1 (en) * | 2021-08-25 | 2023-03-02 | 피에스케이 주식회사 | Substrate processing apparatus |
| TWI782762B (en) * | 2021-10-21 | 2022-11-01 | 天虹科技股份有限公司 | Diffusion mechanism and thin-film-deposition equipment using the same |
| CN115852341A (en) * | 2022-12-23 | 2023-03-28 | 拓荆科技股份有限公司 | Flow guide device in semiconductor spray plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116791065B (en) | 2024-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6206972B1 (en) | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes | |
| US6921437B1 (en) | Gas distribution system | |
| WO2009089794A1 (en) | Plasma processing equipment and gas distribution apparatus thereof | |
| JP2003324072A (en) | Semiconductor manufacturing equipment | |
| CN211921690U (en) | Airflow distribution device and thin film deposition equipment | |
| CN111785604A (en) | Gas spray header, manufacturing method and plasma device comprising gas spray header | |
| CN113106421A (en) | ALD spray assembly and ALD coating equipment | |
| US20100126418A1 (en) | Gas shower module | |
| CN116791065B (en) | Diffusion member and semiconductor process equipment | |
| TWI576462B (en) | A reaction gas delivery device and a chemical vapor deposition or an epitaxial layer growth reactor | |
| CN112323043A (en) | Gas distributor and atomic layer deposition reaction equipment | |
| CN113862643A (en) | Atomic layer deposition device and flow uniformizing mechanism thereof | |
| CN115505904B (en) | Spray set of many air current passageway | |
| CN114457321B (en) | Air inlet device and CVD equipment | |
| CN115110064A (en) | Gas input equipment and gas input method | |
| US6828246B2 (en) | Gas delivering device | |
| CN110249073A (en) | Diffuser design for flowable CVD | |
| CN220041778U (en) | Flow guiding cavity and semiconductor device | |
| CN221008894U (en) | Multi-region gas channel system and reactive ion etching equipment | |
| CN216274361U (en) | ALD spray assembly and ALD coating equipment | |
| CN219752427U (en) | Diffusion pipe and diffusion furnace | |
| CN117107217A (en) | Reactor of spraying assembly and deposition equipment and air inlet and exhaust system thereof | |
| KR102269364B1 (en) | Reactor of apparatus for processing substrate | |
| JPH0917736A (en) | Method and apparatus for manufacturing semiconductor | |
| CN114086155A (en) | Gas nozzle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |