JP2005079220A - Wafer treatment equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent watermarks on a treated wafer by preventing sticking of mist of treatment liquid on the treated wafer at the time of treatment. <P>SOLUTION: This wafer treatment equipment is provided with a spin chuck 10 which rotatably holds a semiconductor wafer W, and a treatment vessel 30, which accommodates the spin chuck 10 and the semiconductor wafer W by partitioning them from the outside and in which an inlet 32i of pure gas, is arranged at a ceiling 32h. In the treatment vessel 30, a cylindrical rectifying object 37 which is formed in a sag shape at a part outside the semiconductor wafer W and the inlet 32i at the ceiling 32h of the treatment vessel 30, and an upper exhaust port 38a which is arranged on the upper sidewall 32g of the treatment vessel 30 opposite to the rectifying object 37 are formed. As a result, atmosphere-containing drop (mist) of chemical of which the atmosphere is rolled above the wafer W can be efficiently exhausted from the upper exhaust port 38a, by a high-pressure portion which is generated on periphery extension of the wafer W by high-speed rotation of the spin chuck 10 at the treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus for supplying a processing liquid to a substrate to be processed such as a semiconductor wafer or a glass substrate for LCD, for example.

  In general, in a semiconductor device manufacturing process, contamination of resist, particles, organic contaminants, metal impurities, etc. adhering to a semiconductor wafer as a substrate to be processed, a glass substrate for LCD (hereinafter referred to as a wafer), and the like. A spin-type substrate processing apparatus is known in order to remove this.

This type of conventional spin-type substrate processing apparatus generally holds a wafer or the like with a spin chuck, which is a holding means accommodated in a processing container, and rotates the spin chuck while rotating the surface of the wafer or the like. A chemical solution and pure water, which are treatment liquids, are supplied to the substrate to perform a chemical treatment and a rinse treatment, and then a spin chuck is rotated at high speed to perform a drying treatment. During processing, clean gas such as nitrogen (N 2) gas or clean air is introduced (supplied) into the processing container from above, and exhausted to achieve uniform processing (see, for example, Patent Document 1). ).
JP-A-9-97757 (Claims, paragraph numbers 0019 to 0022, FIGS. 1 and 2)

  However, in this type of conventional substrate processing apparatus, when the spin chuck is rotated at a high speed and the processing liquid is shaken off, a high-pressure portion is generated on the outer peripheral extension of the surface of the wafer or the like, and the mist that has rolled up to the top of the processing vessel is There was a risk of adhering to the wafer without being evacuated. Further, when the processing liquid is shaken off, there is a problem that mist collides with the upper side wall of the processing container and rebounds and adheres to the wafer. There is a possibility that a water mark is formed on the wafer due to the adhesion of the mist.

  The present invention has been made in view of the above circumstances, and provides a substrate processing apparatus that prevents a mist of a processing solution from adhering to a substrate to be processed during processing to prevent a water mark on the substrate to be processed. It is intended to provide.

  In order to solve the above problems, a substrate processing apparatus of the present invention is based on a substrate processing apparatus for supplying a processing liquid to a substrate to be processed and processing the substrate, and holding means for rotatably holding the substrate to be processed in a horizontal state. And a processing container in which the holding means and the substrate to be processed are separated from the outside and accommodated, and a ceiling is provided with a clean gas inlet, and the processing container includes the processing target in the ceiling part. A cylindrical rectifier formed in a drooping manner at a position outward from the substrate and the introduction port, and an upper exhaust port provided on a side wall of the processing container facing the rectifier are provided (claims). Item 1).

  In the present invention, a cylindrical rectifying body formed in a hanging shape outwardly from the substrate to be processed and the introduction port in the ceiling portion of the processing container, and an upper exhaust provided on a side wall of the processing container facing the rectifying body Any structure may be used as long as it has a mouth, but it is preferable to further include a disk-shaped baffle plate having a gap between the rectifier and a gas guide hole in the center. (Claim 2).

  Further, a lower exhaust port is provided at a lower portion of the holding means in the processing container, and the lower exhaust port and the upper exhaust port are connected via an open / close switching unit that can be switched and communicated with the exhaust device. (Claim 3).

  Further, the processing container may be constituted by an inner container that can be moved up and down with respect to the holding means so as to selectively receive the holding means, and an outer container that accommodates the inner container and the holding means. In this case, the inner container is provided with an inner container exhaust port, and the inner container exhaust port and the upper exhaust port are formed so as to be independently openable / closable (Claim 4), or the holding means in the outer container A lower exhaust port may be provided at a lower portion of the inner container, an inner container exhaust port may be provided in the inner container, and the inner container exhaust port, the upper exhaust port, and the lower exhaust port may be independently controlled to be opened and closed. (Claim 5).

  Further, it is preferable that the structure further includes an annular ridge disposed at a position directly below the rectifying body and having a notch for discharging liquid.

  Since the substrate processing apparatus of the present invention is configured as described above, the following effects can be obtained.

  (1) According to the invention described in claim 1, the holding means and the substrate to be processed are stored separately from the outside, and the substrate to be processed in the ceiling portion is provided in a processing container provided with a clean gas inlet in the ceiling portion. And a cylindrical rectifier formed in a drooping manner at a position outward from the introduction port, and an upper exhaust port provided on the side wall of the processing container facing the rectifier, thereby processing on the substrate to be processed. When the liquid is shaken off, the mist rolled up on the upper part of the processing vessel can be exhausted from the upper exhaust port by the high-pressure part generated on the outer peripheral extension of the substrate to be processed, so that the mist adheres to the substrate to be processed. It is possible to prevent water marks from being generated on the substrate to be processed.

  (2) According to the invention described in claim 2, in addition to the invention described in claim 1, there is provided a disk-shaped baffle plate having a gap with the rectifier and having a gas guide hole in the center. In addition, the clean gas introduced (supplied) from the introduction port into the processing container is not directly brought into contact with the substrate to be processed, but is made to flow uniformly to the substrate to be processed after being diverted by the baffle plate, Processing can be made uniform.

  (3) According to the invention described in claim 3, the lower exhaust port is provided in the lower part of the holding means in the processing container, and the lower exhaust port and the upper exhaust port can be switched and communicated between the exhaust device. By connecting via the open / close switching means, the exhaust system can be unified and the piping section can be simplified, and the upper exhaust port and the lower exhaust port are switched according to the processing form, or exhausted simultaneously. Or you can stop.

  (4) According to the invention described in claim 4, the processing container can be moved up and down with respect to the holding means so as to selectively hold the holding means, and the outer container containing the inner container and the holding means. The inner container exhaust port provided in the inner container and the upper exhaust port provided in the processing container can be controlled to be opened and closed independently, thereby processing in the inner container, and the outer container Depending on the case of processing inside, exhaust from the inner container exhaust port and the upper exhaust port can be selected and performed. Therefore, in addition to the first aspect of the invention, the exhaust of different processes in the inner container and the outer container can be brought into an optimum state, and the processing accuracy can be improved.

  (5) According to the invention described in claim 5, the processing container can be moved up and down with respect to the holding means so as to selectively hold the holding means, and the outer container containing the inner container and the holding means. The inner container exhaust port provided in the inner container, and the upper exhaust port provided in the processing container and the lower exhaust port in the lower part of the outer container can be independently controlled to be opened and closed. Depending on the case of processing in the container and the case of processing in the outer container, the exhaust from the inner container and the exhaust from the upper exhaust port and the lower exhaust port can be selected and performed. Therefore, in addition to the first aspect of the invention, the exhaust of different processes in the inner container and the outer container can be brought into an optimum state, and the processing accuracy can be improved.

  (6) According to the invention described in claim 6, the annular ridge having the liquid discharge notch is disposed immediately below the rectifying body, so that the mist adhering to the rectifying body becomes a liquid droplet downward. Even if it falls, it can be received by an annular trough and discharged to the outside through the liquid discharge notch, so that in addition to the invention of claim 1, it is further ensured that mist adheres to the substrate to be processed. Can be prevented.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the substrate processing apparatus of the present invention is applied to a semiconductor wafer cleaning processing apparatus will be described.

  FIG. 1 is a schematic cross-sectional view of the cleaning processing apparatus, and FIG. 2 is a schematic vertical cross-sectional view of the cleaning processing apparatus.

  The cleaning apparatus includes a spin chuck 10 that is a holding unit that rotatably holds a semiconductor wafer W (hereinafter referred to as a wafer W) that is a substrate to be processed, and a rotating unit that rotates the spin chuck 10, such as a hollow motor 12. A nozzle 20 which is a processing liquid supply means for appropriately supplying a processing liquid such as an acidic chemical liquid, an alkaline chemical liquid, pure water (DIW) or nitrogen (N2) gas to the surface of the wafer W held by the spin chuck 10; An inner container 31 (hereinafter referred to as an inner cup 31) that can be moved up and down relative to the spin chuck 10 to selectively accommodate the spin chuck 10 and the hollow motor 12, and the inner cup 31, the spin chuck 10 and the hollow motor. A processing container 30 composed of an outer container 32 (hereinafter referred to as an outer chamber 32) that divides and stores 12 from the outside; A motor surrounding cylinder 40 surrounding the hollow motor 12.

  Further, a fixed cover body 60 that can contact the edge of the opening 31 a of the inner cup 31 protrudes from the motor surrounding cylinder body 40. On the outer periphery of the lower portion of the spin chuck 10 in the cleaning processing apparatus, a cover body 50 that prevents the processing liquid (chemical solution or the like) from adhering to the lower non-rotating portion of the spin chuck 10 such as the hollow motor 12 and the motor surrounding cylinder 40 is provided. It is installed around.

  The processing container 30 (the inner cup 31 and the outer chamber 32) is disposed in a unit chamber 33 having an opening 33a for loading and unloading the wafer W.

  A nozzle arm 21 that moves the nozzle 20 inward of the outer chamber 32 is disposed outside the outer chamber 32.

  The outer chamber 32 includes a substantially cylindrical chamber body 32a that surrounds the outside of the spin chuck 10 and the wafer W, and a lid that is disposed on the chamber body 32a and separates the spin chuck 10 and the wafer W from the outside. It is mainly composed of 32b.

  The chamber body 32a has a bottomed cylindrical lower side wall 32c, and a cylindrical body 32d having a larger diameter than the lower side wall 32c connected to the upper end of the lower side wall 32c and surrounding the outer periphery of the spin chuck 10 and the wafer W. And an intermediate partition portion 32f connected to the upper end of the body portion 32d and having an opening 32e having a diameter slightly larger than the diameter of the wafer W at the center. By forming the body portion 32d of the chamber body 32a into a cylindrical shape having a larger diameter than the lower side wall 32c, the high-pressure portion generated on the outer peripheral extension of the surface of the wafer W when the spin chuck 10 rotates at a high speed is separated from the wafer W. Thus, liquid chemical droplets and mist can be prevented from adhering to the wafer W.

  The lid 32b is configured by a cylindrical upper side wall 32g having a larger diameter than the opening 32e, and a ceiling portion 32h that closes the upper end of the upper side wall 32g, which is provided on the upper surface of the intermediate partition 32f of the chamber body 32a. Has been.

  In this case, the ceiling portion 32h of the lid 32b is provided with a plurality of, for example, five inlets 32i concentrically with the center for introducing a downflow DF such as a clean gas such as nitrogen (N2) gas or clean air. ing.

  The lid 32b is provided on a cylindrical rectifier 37 formed in a hanging shape outward from the wafer W and the inlet 32i in the ceiling portion 32h, and an upper side wall 32g facing the rectifier 37. An upper exhaust mechanism 38 having a disc-shaped baffle plate 38c having a gap 38s between the upper exhaust port 38a and the rectifier 37 and having a gas guide hole 38b in the center is formed. The upper exhaust port 38a is provided at a position away from an upper position of a carry-in / out opening 32j, which will be described later, and is connected to an upper exhaust pipe line 38d that exhausts air from the outer chamber 32.

  In this way, the cylindrical rectifier 37 formed in a hanging shape outward from the wafer W and the inlet 32i in the ceiling portion 32h, and the upper exhaust port 38a provided in the upper side wall 32g facing the rectifier 37. When the spin chuck 10 is rotated at a high speed to shake off the processing liquid (chemical solution, pure water), the processing liquid rolled up in the outer chamber 32 by the high-pressure portion generated on the outer peripheral extension of the wafer W is provided. The droplet (mist) can be exhausted from the upper exhaust port 38a. Also, a clean gas introduced (supplied) from the inlet 32i, for example, by providing a disc-shaped baffle plate 38c having a gap 38s between the rectifier 37 and a gas guide hole 38b at the center, for example, The N2 gas can be made to flow uniformly to the wafer W side after being diverted by the baffle plate 38c via the gap 38s and the guide hole 38b without being brought into direct contact with the wafer W. In a state where the inner cup 31 described later is raised and the wafer W is surrounded by the inclined portion 31b, the N2 gas flows between the spin chuck 10 and the inclined portion 31b from above the wafer W, and discharges the inner cup described later. It is exhausted by the pipe line 31c. In the state where the inner cup 31 is lowered and the wafer W is surrounded by the outer chamber 32, N 2 gas flows between the spin chuck 10 and the inner wall of the outer chamber 32 from above the wafer W, and will be described below. The exhaust pipe 38e exhausts the air.

  A nozzle opening 32k through which the nozzle arm 21 passes is formed in the upper side wall 32g and the rectifying body 37 at a portion of the lid body 32b substantially opposite to the carry-in / out opening 32j.

  A loading / unloading opening 32j for loading / unloading the wafer W is formed in a portion of the upper portion of the body 32d of the chamber main body 32a facing the opening 33a of the unit chamber 33. The loading / unloading opening 32j is opened / closed. A shutter 34 is provided. The shutter 34 is formed in an annular shape, and an inclined surface 34 a is formed on the inner side surface of the shutter 34. The inclined surface 34 a expands toward the lower side to receive the processing liquid scattered around the wafer W. The shutter 34 moves up and down while being in sliding contact with a seal member 35 provided around the inner wall surface of the outer chamber 32 by an opening / closing mechanism (not shown) such as a cylinder, and is brought into close contact with the outer chamber 32 via an O-ring 36 when closed. It is configured as follows. Therefore, even when the pressure in the outer chamber 32 becomes positive, the carry-in / out opening 32j is reliably closed by the shutter 34, and the atmosphere inside the outer chamber 32 does not leak out from the carry-in / out opening 32j.

  The intermediate partition portion 32f of the outer chamber 32 is formed in a downward gradient from the inner surface of the upper side wall 32g toward the inside, and the treatment liquid adhering to the inner wall surface of the rectifying body 37 is formed on the distal end side of the intermediate partition portion 32f. An annular ridge 39 is formed to be received when the mist is condensed and falls as a droplet. The annular basket 39 is provided with liquid discharge notches 39a at two positions that do not interfere with the carry-in / out opening 32j (see FIG. 3). As shown in FIG. 3, the liquid discharge notch 39a communicates with a notch 34b provided in the shutter 34 located near the lower portion of the intermediate partition portion 32f. In this way, by forming the annular ridge 39 in the intermediate partition part 32f, even if the mist of the processing liquid adhering to the upper side wall 32g is condensed to form droplets, the upper side wall 32g and the intermediate partition part 32f are aligned. It is dropped and collected in the annular ridge 39, passes through the liquid discharge notch 39a, and is discharged to the lower side of the outer chamber 32. In this case, by forming a tapered surface 37a that expands toward the outside at the lower end portion of the inner wall surface of the rectifying body 37, the liquid (mist) adhering to the rectifying body 37 is favorably drained. be able to.

  The bottom 32n of the outer chamber 32 is provided with a plurality of (for example, three) discharge ports 32p. The outer chamber discharge pipe 32m for discharging droplets from the outer chamber 32 is provided in the discharge ports 32p. Is connected. In addition, lower exhaust ports 38f are provided on the lower side wall 32c of the outer chamber 32 at positions substantially opposite to each other with the spin chuck 10 interposed therebetween. The lower exhaust ports 38f are lower exhaust pipes that exhaust from the outer chamber 32. A path 38e is connected.

  The inner cup 31 is formed so as to surround the spin chuck 10 and the motor surrounding cylinder 40, and is between a raised position surrounding the wafer W held by the spin chuck 10 and a lowered position below the wafer W. It is formed so that it can be raised and lowered. The inner cup 31 includes a cylindrical side wall 31d, an inclined portion 31b that decreases in diameter from the upper end of the side wall 31d, and a bottom portion 31e formed along the lower end of the side wall 31d. . The inner cup 31 configured in this way is connected via a connecting shaft 73 to a horizontal member 72 connected to a rod 71 of an elevating cylinder 70 that is an elevating means installed vertically in the unit chamber 33. The connecting shaft 73 is inserted into a through hole provided in the bottom portion 32 n of the outer chamber 32 in a loose fit, and the bottom portion of the inner cup 31 of the connecting shaft 73 and the bottom portion 32 n of the outer chamber 32 in the outer chamber 32. A bellows 74 that can be expanded and contracted is interposed therebetween. The bellows 74 is fixed to a fixing member 75 whose upper end is fixed to the inner cup 31, and the lower end of the bellows 74 is fixed around the through hole of the bottom portion 32d. Therefore, when the rod 71 expands and contracts by driving the lifting cylinder 70, the inner cup 31 moves up and down while the bellows 74 expands and contracts.

  In this case, a circular opening 31f is provided at the center of the bottom 31e of the inner cup 31, and the motor surrounding cylinder 40 is disposed inside the opening 31f. The processing liquid received by the inner cup 31 passes through the opening 31f and is discharged below the bottom 31e. That is, an annular gap S is formed between the inner surface of the bottom 31e and the outer surface of the motor surrounding cylinder 40, and the processing liquid received by the inner cup 31 passes through the gap S and passes through the bottom 32n. It is discharged through an inner cup discharge pipe 31c connected to a discharge port 31g provided in the.

  A first cylindrical member 31h having the same diameter as the opening 31f and a second cylindrical member 31i having a larger diameter than the first cylindrical member 31h are concentric on the lower surface of the bottom 31e of the inner cup 31. It is drooping to. In addition, a third cylindrical member 31j erected on the bottom 32n of the outer chamber 32 is provided between the first and second cylindrical members 31h and 31i, and the first and second cylindrical members 31h and 31i. The first and second cylindrical members 31h, 31i and the third cylindrical member 31j are formed so as to always overlap while the inner cup 31 is raised and lowered. Thereby, even when raising / lowering the inner cup 31, it can prevent that the process liquid discharged | emitted from the opening 31f is scattered outside from the 1st cylindrical member 31h and the 2nd cylindrical member 31i.

  The spin chuck 10 is capable of rotating (swinging) the holding member 11 in the vertical direction via three holding members 11 that hold the peripheral edge of the wafer W and pivot pins (not shown). The chuck plate 13 is supported so as to be switched between the position and the non-holding position, and the rotating cylinder 14 is connected to the lower surface of the chuck plate 13. The lower end of the rotary cylinder 14 is connected to the upper end of the hollow rotary shaft 12 a of the hollow motor 12. When the hollow motor 12 is driven, the hollow rotating shaft 12a rotates, and the rotating cylinder 14, the chuck plate 13, and the holding member 11 rotate integrally. The chuck plate 13 has a temporary placement portion (not shown) and a substantially L-shape formed on the chuck plate 13, and holds the periphery of the wafer W by contacting the periphery of the wafer W when the spin chuck 10 rotates. A holding member 11 is formed. The holding member 11 formed as described above can be engaged with and disengaged from an operation pin (not shown) movable in the vertical direction, and the wafer is held by the holding member 11 in a state where the operation pin is lifted and engaged. The holding of the wafer W is released, and the peripheral edge of the wafer W is held by the holding member 11 in a state where the operation pins are lowered and disengaged.

  Further, a droplet of the processing liquid adheres to the lower non-rotating portion of the spin chuck 10, that is, the hollow motor 12, the motor surrounding cylinder 40, and the fixed cover body 60 on the lower outer periphery of the chuck plate 13 of the spin chuck 10. A substantially skirt-shaped cover body 50 for blocking is provided. The cover body 50 is made of a synthetic resin rich in chemical resistance and corrosion resistance, such as PVC (polyvinyl chloride), PEEK (polyether ether ketone), PTFE (polytetrafluoroethylene) or the like. The cover body 50 is formed to have a slightly smaller diameter than the opening 31a of the inner cup 31 so as not to interfere with the inner cup 31 when the inner cup 31 is raised and lowered.

  In this way, by providing the cover body 50 around the lower outer periphery of the chuck plate 13 of the spin chuck 10, the cover body 50 can receive the droplets of the processing liquid supplied to the surface of the wafer W during processing. In addition, the received droplets can be quickly moved to the outer peripheral side and scattered (discharged) to the outer peripheral side in the processing container 30 (inner cup 31, outer chamber 32) by the centrifugal force generated by the rotation of the spin chuck 10. . Therefore, it is possible to suppress the treatment liquid droplets from adhering to the hollow motor 12, the motor surrounding cylinder body 40, and the fixed cover body 60.

  In addition, a ceiling portion 41 having an opening 41 a into which the rotary cylinder 14 is loosely fitted is provided at the upper end of the motor surrounding cylinder 40. In addition, a substantially skirt-shaped fixed cover body 60 that can contact the opening 31 a of the inner cup 31 protrudes from the ceiling 41 of the motor surrounding cylinder 40. Similar to the cover body 50, the fixed cover body 60 is made of synthetic resin having high chemical resistance and corrosion resistance, such as PVC (polyvinyl chloride), PEEK (polyether ether ketone) or PTFE (polytetrafluoroethylene). Is formed.

  In this way, by providing the motor cover cylinder 40 with the fixed cover body 60 that can contact the opening 31a of the inner cup 31, different processing liquids when the processing is performed with the inner cup 31 lowered. And the atmosphere can be prevented from flowing into the inner cup 31.

  Further, above the chuck plate 13, a disk-like under plate 80 that covers the lower surface of the wafer W held by the spin chuck 10 is disposed inside the three holding members 11. The under plate 80 is supported substantially in parallel with the lower surface of the wafer W by a shaft 81 passing through a hollow portion 12b of the hollow rotary shaft 12a and a through hole 13a formed in the central portion of the chuck plate 13 with a gap. Yes. The lower end of the shaft 81 protrudes downward by loosely fitting a through-hole 33 b formed in the bottom surface of the unit chamber 33, and the lower end of the shaft 81 is an underplate lifting / lowering cylinder disposed below the bottom surface of the unit chamber 33. It is connected to a horizontal support member 84 connected to a rod 83 of 82. Therefore, by driving the underplate lifting / lowering cylinder 82, the rod 83 expands and contracts, and the horizontal support member 84, the shaft 81, and the underplate 80 can be integrally moved up and down in the vertical direction. Thereby, the under plate 80 can be moved up and down to a position close to the lower surface of the wafer W held by the spin chuck 10 and a position away from the lower surface of the wafer W.

  The underplate 80 is provided with a lower surface supply path 85 for supplying an acidic chemical solution, an alkaline chemical solution, a treatment solution such as pure water (DIW), N2 gas, and the like to the lower surface of the wafer W. The lower surface supply path 85 is provided so as to penetrate the inside of the shaft 81.

  A processing fluid supply path 22 for processing liquid or N 2 gas is provided inside the nozzle arm 21 that supports the nozzle 20. The processing fluid supply path 22 opens to the nozzle 20 attached to the tip of the nozzle arm 21. The base end portion of the nozzle arm 21 is connected to the rotation drive mechanism 23, and the nozzle arm 21 is rotated in the horizontal plane around the base end by driving the rotation drive mechanism 23. As a result, the nozzle 20 passes from the standby position outside the outer chamber 32 through the nozzle opening 32k and is moved above the central portion of the wafer W, and the standby position outside the outer chamber 32 from above the central portion of the wafer W. Moved to position. Therefore, the nozzle 20 can move at least between the upper center of the wafer W and the upper peripheral edge.

  Next, the piping system of the cleaning processing apparatus will be described with reference to FIG. As shown in FIG. 4, the processing fluid supply path 22 provided in the nozzle arm 21 and the lower surface supply path 85 provided in the shaft 81 are respectively a nozzle supply pipe 91 having a first on-off valve V1, In addition, it is connected to the main supply line 90 via a lower surface supply line 92 having a second on-off valve V2. The main supply line 90 is supplied with an acidic nozzle supply line 95 for supplying an acidic chemical liquid from an acidic chemical liquid supply source 94 and an alkaline chemical liquid from an alkaline chemical liquid supply source 96 via a supply switching valve 93 for switching the supply of processing liquid. An alkaline nozzle supply pipe 97 for supplying pure water, a pure water supply pipe 99 for supplying pure water from a pure water supply source 98, an N2 gas supply pipe 101 for supplying N2 gas from an N2 gas supply source 100, The main supply pipe 90, the nozzle supply pipe 91 (processing fluid supply path 22), the lower surface supply pipe 92 (lower surface supply path 85), and the aspirator 110 that sucks the residual processing liquid in the supply switching valve 93 are connected. .

  In this case, the alkaline chemical solution supply source 96 includes, for example, a tank 200 for storing an alkaline chemical solution called APM (mixed solution of NH 4 OH / H 2 O 2 / H 2 O) mainly composed of an ammonia (NH 4 OH) component, and the tank 200 is opened and closed. And a reserve tank 210 connected via a supply line 201 provided with a valve V3. The tank 200 is provided with a heat retaining heater 202, and the temperature of the alkaline chemical stored in the tank 200 is adjusted to a predetermined temperature by the heat retaining heater 202. Further, the reserve tank 210 supplies NH4OH, H2O2, and H2O (DIW) via first, second, and third supply pipes 211, 212, and 213 provided with on-off valves V4, V5, and V6, respectively. Is connected. In addition, a preliminary warming heater 214 is provided in the preliminary tank 210 so that the premixed alkaline chemical liquid supplied into the preliminary tank 210 is adjusted to a predetermined temperature by the preliminary warming heater 214. It has become. As described above, the temperature of the alkaline chemical liquid mixed in advance in the spare tank 210 is adjusted to a predetermined temperature, and then supplied into the tank 200. Then, the temperature is doubled in the tank 200 before being supplied to the tank 200. Since the alkaline chemical liquid can be temperature-controlled in advance and waited, the alkaline chemical liquid at a predetermined temperature can be continuously supplied. Note that a pump P and a filter F are interposed in the alkaline nozzle supply pipe 97.

  On the other hand, an upper exhaust line 38d connected to the upper exhaust port 38a of the upper exhaust mechanism 38 and a lower exhaust line 38e connected to the lower exhaust port 38f are open / close switching means that can be switched and communicated, for example, 3 port 4 position switching. The exhaust device 400 is connected through a valve 300 (hereinafter referred to as an on-off switching valve 300). In this way, the upper exhaust line 38d connected to the upper exhaust port 38a and the lower exhaust line 38e connected to the lower exhaust port 38f are connected to the exhaust device 400 via the open / close switching valve 300, whereby the upper exhaust line 38d is connected. In addition to being able to simultaneously exhaust or stop the opening 38a and the lower exhaust port 38f, the exhaust of only the upper exhaust port 38a or the exhaust of only the lower exhaust port 38f can be performed. An open / close valve V is interposed in the inner cup discharge pipe 31c connected to the discharge port 31g. Note that the inner cup discharge conduit 31 c may be connected to the exhaust device 400.

  With this configuration, for example, when the inner cup 31 is raised and the acidic chemical treatment is performed in the inner cup 31, the on-off valve V provided in the inner cup discharge pipe 31c is opened, and the upper exhaust port is opened. The exhaust from 38a and the lower exhaust port 38f can be stopped, or only the upper exhaust port 38a or only the lower exhaust port 38f can be exhausted. Further, when the inner cup 31 is lowered to perform the alkaline chemical treatment in the outer chamber 32, or when the inner cup 31 is lowered to perform the water washing treatment (rinsing treatment) or the drying treatment in the outer chamber 32, the inner cup is discharged. The on-off valve V interposed in the pipe line 31c can be closed and exhausted simultaneously from the upper exhaust port 38a and the lower exhaust port 38f.

  Next, the processing steps for the wafer W in the cleaning processing apparatus will be described. Here, a cleaning process after the resist of the wafer W whose surface is coated with a resist is water-solubilized will be described.

  In a state before the wafer W is loaded, the inner cup 31 is lowered in advance, and the upper portion of the spin chuck 10 is protruded above the inner cup 31. At this time, the under plate 80 is lowered in advance, and stands by at a position spaced below the height at which the wafer W is held by the spin chuck 10. A space sufficient for delivery of the wafer W is formed between the upper surface of the under plate 80 and the upper portion of the holding member 11. Further, the holding member 11 is in a state of being moved to the outside by raising the operation pin (not shown). The nozzle arm 21 stands by outside the nozzle opening 32k.

  In this state, as shown in FIG. 5, the shutter 34 is lowered to open the loading / unloading opening 32 j of the outer chamber 32, and the transfer arm 500 holding the wafer W is moved to the opening 33 a of the unit chamber 33 and the outer chamber 32. It is made to enter the outer chamber 32 through the opening / closing port 32j. Then, the transfer arm 500 is linearly moved in the horizontal direction, the wafer W is moved so that the peripheral edge of the wafer W is positioned above the three holding members 11, the transfer arm 500 is lowered, and the holding member 11 is moved. The lower surface periphery of the wafer W is supported by the temporary placement unit.

  After the wafer W is transferred to the spin chuck 10, the transfer arm 500 is lowered between the wafer W and the under plate 80, moved linearly in the horizontal direction, retracted from between the holding members 11, and then moved out of the outer chamber 32. After exit, the shutter 34 closes the loading / unloading opening 32j.

  Next, the operation pins (not shown) are lowered to move the contact portions of the holding members 11 inward, thereby holding the periphery of the wafer W. In this way, the wafer W is held by the spin chuck 10 with the periphery held by the holding member 11. The spin chuck 10 becomes rotatable when the operation pin is lowered and the engagement with the holding member 11 is released.

  Next, as shown in FIG. 6, the under plate 80 is raised to a position close to the wafer W. For example, a gap of about 1 mm is formed between the under plate 80 moved to the close position and the lower surface (back surface) of the wafer W. Further, the inner cup 31 is raised, and the periphery of the wafer W is surrounded by the inclined portion 31 b of the inner cup 31.

  Next, the rotation drive mechanism 23 is driven to rotate the nozzle arm 21, and the nozzle 20 at the tip of the nozzle arm 21 is moved from the nozzle opening 32 k into the outer chamber 32 and moved to above the center of the wafer W. . The spin chuck 10 is rotated at a low speed by driving the hollow motor 12, and the wafer W is rotated at a low speed integrally with the spin chuck 10. Then, the acidic chemical solution is discharged (supplied) from the nozzle 20 to supply the acidic chemical solution to the vicinity of the center of the upper surface of the wafer W. At this time, the on-off valve V is opened, and the exhaust from the upper exhaust port 38a and the lower exhaust port 38f is stopped. The acidic chemical solution supplied to the central portion of the wafer W flows in the outer peripheral direction of the wafer W by a centrifugal force generated by the rotation of the wafer W, and a liquid film of the acidic chemical solution is formed on the upper surface of the wafer W. In addition, the acidic chemical solution is supplied from the nozzle 20 to the upper surface of the wafer W, and at the same time, the acidic chemical solution is supplied from the lower surface supply path 85 to the lower surface of the wafer W. The acidic chemical solution supplied to the center of the lower surface of the wafer W flows in the outer peripheral direction of the wafer W by the centrifugal force generated by the rotation of the wafer W, and a liquid film of the acidic chemical solution is formed on the lower surface of the wafer W. At this time, the chemical solution falls downward from the outer periphery of the spin chuck 10, but the dropped liquid droplet of the chemical solution is received by the cover body 50 provided around the outer periphery of the spin chuck 10 and then rotated by the spin chuck 10. It is scattered (discharged) in the outer circumferential direction by centrifugal force. Therefore, it is possible to prevent the chemical solution dropped from the wafer W from adhering to the motor surrounding cylinder body 40, the hollow motor 12, and the fixed cover body 60 side.

  When the acidic chemical liquid film is formed on both surfaces of the wafer W as described above, the supply switching valve 93 is closed to stop the supply of the acidic chemical liquid from the nozzle 20 and the lower surface supply path 85, and for a predetermined time. Is rotated at a low speed so that the liquid film does not collapse. In this way, both surfaces of the wafer W are treated with the acidic chemical solution.

  When the supply of the acidic chemical solution from the nozzle 20 and the lower surface supply path 85 is stopped, the main supply pipe is changed from the state where the supply switching valve 93 is connected to the main supply line 90 and the acid nozzle supply line 95 is connected. The path 90 and the aspirator 110 are connected. In this state, the aspirator 110 is operated to suck the acidic chemical solution from the main supply pipe line 90, the processing fluid supply path 22, and the lower surface supply path 85. Thereafter, the first and second on-off valves V1, V2 are closed.

  During the supply of the acidic chemical solution or during the acidic chemical solution treatment, the acidic chemical solution scattered around the wafer W is received by the inner cup 31, and from between the side wall 31d and the motor surrounding cylinder 40, the first cylindrical member 31h. And the motor surrounding cylinder 40, the liquid is discharged by the inner cup discharge pipe 31c.

  N2 gas or clean air is introduced from the inlet 32i during the supply of the acidic chemical solution or during the acidic chemical solution treatment, and a downflow DF is formed in the outer chamber 32 by the N2 gas or clean air. The N2 gas or clean air introduced from the introduction port 32i passes through the gap 38s between the baffle plate 38c and the rectifier 37 and the guide hole 38b, flows around the baffle plate 38c and below the baffle plate 38c, and spins. It flows toward the wafer W held by the chuck 10 and flows between the spin chuck 10 and the inclined portion 31b from above the wafer W. Then, it flows in the inner cup 31 so as to descend between the side wall 31d and the motor surrounding cylinder 40 and between the first cylindrical member 31h and the motor surrounding cylinder 40, and the inner cup discharge pipe 31c. Discharged by. Thus, by forming the downflow DF, it is possible to prevent the swirling airflow generated by the rotation of the spin chuck 10 and the wafer W from rising. That is, it is possible to prevent the atmosphere below the wafer W from rising toward the wafer W, and to prevent droplets, particles, and the like that bounce off the side wall 31d from adhering to the wafer W. The drainage or exhaust is smoothly lowered in the inner cup 31 by the down flow and is smoothly discharged by the inner cup discharge pipe 31c. Further, even when the high temperature acidic chemical solution evaporates and an acidic chemical solution atmosphere is generated, the acidic chemical solution atmosphere can be lowered into the inner cup 31 by the downflow, and can be smoothly exhausted by the inner cup discharge conduit 31c. It is possible to prevent the acidic chemical solution atmosphere from rising and staying above W. Also, the N2 gas or clean air introduced from the introduction port 32i is supplied by bypassing the baffle plate 38c, so that the wafer W Can be prevented from being locally charged.

  When the acidic chemical liquid atmosphere rises above the wafer W and the mist of the acidic chemical liquid has condensed on the upper side wall 32g and adhered as droplets, the liquid droplets descend along the upper side wall 32g, and the intermediate partition portion It is received by an annular flange 39 provided at 32f. Therefore, it is possible to prevent the acidic chemical liquid attached to the upper side wall 32g from dropping toward the wafer W. The liquid droplet received by the annular ridge 39 passes through the liquid discharge notch 39a and is discharged to the lower end, descends between the outer chamber 32 and the inner cup 31, and is moved to the outer chamber by the outer chamber discharge pipe 32m. It is discharged from the chamber 32 and discharged out of the cleaning processing apparatus.

  When the acidic chemical liquid treatment on both surfaces of the wafer W is completed, the spin motor 10 is rotated at a higher speed than during the acidic chemical liquid treatment by driving the hollow motor 12, and the wafer W is rotated integrally with the spin chuck 10 at a higher speed than during the acidic chemical liquid treatment. Let By this rotation, the liquid film on both surfaces of the wafer W is shaken off. Further, when the spin chuck 10 is rotated, the acidic chemical solution attached to the spin chuck 10, the cover body 50 and the under plate 80 is shaken off. The acidic chemical liquid shaken off from the wafer W, the spin chuck 10, the cover body 50, and the under plate 80 is received by the inner cup 31, and between the side wall 31d and the motor surrounding cylinder 40, the first cylindrical member 31h and the motor. It falls between the surrounding cylinder 40 and is discharged by the inner cup discharge pipe 31c. When the acidic chemical solution is shaken off, N2 gas may be supplied from the nozzle 20 and the lower surface supply path 85, and the acidic chemical solution may be swept away by the N2 gas.

  N2 gas or clean air is introduced from the inlet 32i while the acidic chemical is shaken out.

  While the acidic chemical solution is shaken out, it is preferable to switch the open / close switching valve 300 to exhaust the gas from the upper exhaust port 38a. As a result, the atmosphere containing the chemical liquid droplets (mist) rolled up to the lid 32b side by the high-pressure portion generated on the outer peripheral extension of the wafer W by the high-speed rotation of the spin chuck 10 is efficiently discharged from the upper exhaust port 38a. Can be exhausted.

  After the acidic chemical solution is shaken off, the inner cup 31 is lowered as shown in FIG. 7 so that the periphery of the wafer W is surrounded by the outer chamber 32. The inner cup 31 is lowered to a position where the tip of the inclined portion 31 b comes into close contact with the tip of the fixed cover body 60.

  Thereafter, while discharging (supplying) pure water from the nozzle 20, the nozzle 20 at the tip of the nozzle arm 21 is moved from at least the center to the peripheral edge of the rotating wafer W, and pure water is applied to the entire upper surface (surface) of the wafer W. Then, the acidic chemical liquid adhering to the wafer W is washed away with pure water. Further, pure water is also discharged (supplied) from the lower surface supply path 85, pure water is supplied to the lower surface of the wafer W, and the acidic chemical solution adhering to the lower surface (back surface) of the wafer W is washed away with pure water. At this time, the switching valve 300 is switched to exhaust from the upper exhaust port 38a and the lower exhaust port 38f. In this way, the wafer W is rinsed with pure water. In the rinsing process, the spin chuck 10 and the wafer W are rotated at a higher speed than during the acidic chemical solution process. At this time, pure water falls downward from the outer periphery of the spin chuck 10, and after the dropped pure water droplets are received by the cover body 50 provided around the lower periphery of the spin chuck 10, It is scattered (discharged) in the outer peripheral direction by centrifugal force due to rotation. Therefore, it is possible to prevent the pure water dropped from the wafer W from adhering to the motor surrounding cylinder 40, the hollow motor 12 and the fixed cover body 60 side. Further, during the rinsing process, the on-off valve V interposed in the inner cup discharge pipe 31c is closed to stop the exhaust from the inner cup discharge pipe 31c, that is, the inclined portion 31b is in close contact with the fixed cover body 60. The pressure in the inner cup 31 placed in an airtight state is at least equal to or higher than the outside of the inner cup 31. Thereby, pure water can be prevented from flowing into (invading) the inner cup 31.

  Before supplying pure water, the acidic chemical liquid is sucked from the main supply pipe 90, the nozzle supply pipe 91, the processing fluid supply path 22, the lower surface supply pipe 92, and the lower surface supply path 85 by the operation of the aspirator 110. Therefore, clean pure water can be supplied from the nozzle 20 and the lower surface supply path 85. Further, by forming a narrow gap between the under plate 80 and the wafer W and flowing pure water between them, the entire lower surface of the wafer W can be rinsed with a small amount of pure water.

  The pure water supplied to the wafer W flows in the outer circumferential direction of the wafer W, is received by the outer chamber 32, falls from between the side wall of the outer chamber 32 and the side wall 31d of the inner cup 31 to the lower portion of the outer chamber 32, and is The chamber is discharged from the outer chamber 32 to the outside of the cleaning processing apparatus by the chamber discharge pipe 32m. When pure water flows from the wafer W to the outside, the holding member 11 and the under plate 80 are also washed with pure water, and the acidic chemical solution adhering to the holding member 11 and the under plate 80 is washed away with pure water.

  During the rinsing process, N2 gas or clean air is introduced from the inlet 32i, and a downflow DF is formed in the outer chamber 32 by the N2 gas or clean air. Further, the air is exhausted from the upper exhaust port 38a and the lower exhaust port 38f. The N2 gas or clean air introduced from the introduction port 32i passes through the gap 38s between the baffle plate 38c and the rectifier 37 and the guide hole 38b, flows around the baffle plate 38c, and flows below the baffle plate 38c. It flows into the space between the spin chuck 10 and the side wall of the outer chamber 32 from above W, flows between the side wall of the outer chamber 32 and the side wall 31d of the inner cup 31, and flows into the outer chamber discharge pipe 32m and the lower exhaust port 38f. Discharged by. Thus, by forming the downflow DF, it is possible to prevent the swirling airflow generated by the rotation of the spin chuck 10 and the wafer W from rising. That is, it is possible to prevent the atmosphere below the wafer W from rising toward the wafer W, and to prevent droplets, particles, and the like that bounce off the side walls of the outer chamber 32 from adhering to the wafer W. Further, the atmosphere containing pure water droplets (mist) rolled up on the lid 32b side is exhausted from the upper exhaust port 38a by the high-pressure portion generated on the outer peripheral extension of the wafer W by the high-speed rotation of the spin chuck 10. The

  When the rinsing process for the wafer W is sufficient, the supply of pure water from the nozzle 20 and the lower surface supply path 85 is stopped. When stopping the supply of pure water, the supply switching valve 93 is switched to change the state where the main supply line 90 and the pure water supply line 99 are connected to the state where the main supply line 90 and the aspirator 110 are connected. In this state, the aspirator 110 is operated to suck pure water from the main supply line 90, the nozzle supply line 91, the processing fluid supply line 22, the lower surface supply line 92, and the lower surface supply path 85. Thereby, when passing an alkaline chemical | medical solution through the nozzle 20 and the lower surface supply path 85, it can prevent that the density | concentration of an alkaline chemical | medical solution falls. Thereafter, V1 and V2 are closed on the first and second on-off valve wafers W.

  Next, while discharging (supplying) the alkaline chemical solution from the nozzle 20, the nozzle arm 21 is rotated to move the nozzle 20 from at least the center to the peripheral edge of the rotating wafer W, over the entire upper surface (surface) of the wafer W. Supply alkaline chemicals. Further, the alkaline chemical liquid is also discharged (supplied) from the lower surface supply path 85 to supply the alkaline chemical liquid to the lower surface (back surface) of the wafer W. While supplying the alkaline chemical, the exhaust from the upper exhaust port 38a is stopped, and the lower exhaust port 38f is opened. By stopping the upper exhaust port 38a, in this state, since it is rotating at a low speed, it is possible to prevent a change in the temperature of the alkaline chemical liquid that is temperature-controlled. After supplying the alkaline chemical, the exhaust gas is exhausted from the upper exhaust port 38a after a predetermined time has elapsed. In this manner, both surfaces (front and back surfaces) of the wafer W are processed with the alkaline chemical solution. During the alkaline chemical processing, the spin chuck 10 and the wafer W are rotated at a higher speed than during the acidic chemical processing. The atmosphere containing alkaline chemical liquid droplets (mist) rolled up on the lid 32b side is exhausted from the upper exhaust port 38a by the high-pressure portion generated on the outer peripheral extension of the wafer W by the high-speed rotation of the spin chuck 10. . During the alkaline chemical solution treatment, the chemical solution falls downward from the outer periphery of the spin chuck 10, and the dropped chemical solution droplet is received by the cover body 50 provided around the lower outer periphery of the spin chuck 10, and then the spin chuck. It is scattered (discharged) in the outer peripheral direction by centrifugal force due to rotation of 10. Therefore, it is possible to prevent the chemical solution dropped from the wafer W from adhering to the motor surrounding cylinder 40, the hollow motor 12, and the fixed cover 60 side. Further, even during the alkaline chemical treatment, the on-off valve V is closed to stop the exhaust from the inner cup discharge pipe 31c, that is, the inner cup 31 in which the inclined portion 31b is in close contact with the fixed cover body 60 and is in an airtight state. The inner pressure is at least equal to or greater than the outside of the inner cup 31. Thereby, it is possible to prevent the alkaline chemical liquid from flowing into (invading) the inner cup 31.

  The alkaline chemical solution supplied to the wafer W flows in the outer circumferential direction of the wafer W, is received by the outer chamber 32, and falls from the space between the outer chamber 32 side wall and the inner cup 31 side wall 31 d to the lower portion of the outer chamber 32. The outer chamber 32 is discharged from the outer chamber 32 through the outer chamber discharge pipe 32m and discharged to the outside of the cleaning apparatus.

  N2 gas or clean air is also introduced from the inlet 32i during the alkaline chemical treatment.

  When the alkaline chemical liquid atmosphere rises above the wafer W and the alkaline chemical liquid atmosphere is condensed and attached as droplets on the upper side wall 32g, the liquid droplets descend along the upper side wall 32g and the intermediate partition portion 32f. Is received by an annular flange 39 provided in Therefore, it is possible to prevent the alkaline chemical liquid adhering to the upper side wall 32g from dropping toward the wafer W. The liquid droplet received by the annular ridge 39 passes through the liquid discharge notch 39a and is discharged to the lower end, descends between the outer chamber 32 and the inner cup 31, and is moved to the outer chamber by the outer chamber discharge pipe 32m. It is discharged from the chamber 32 and discharged out of the cleaning processing apparatus.

  When the alkaline chemical solution treatment is sufficient, the supply of the alkaline chemical solution from the nozzle 20 and the lower surface supply path 85 is stopped. When stopping the supply of the alkaline chemical solution, the supply switching valve 93 is switched so that the main supply line 90 and the aspirator 110 are connected from the state where the main supply line 90 and the alkaline nozzle supply line 97 are connected. . In this state, the aspirator 110 is operated, and an alkaline chemical solution is sucked from the main supply line 90, the nozzle supply line 91, the processing fluid supply line 22, the lower surface supply line 92, and the lower surface supply path 85. Thereafter, the first and second on-off valves V1, V2 are closed.

  After that, while discharging (supplying) pure water from the nozzle 20, the nozzle 20 at the tip of the nozzle arm 21 is moved from at least the center to the periphery of the rotating wafer W in the same manner as in the acidic chemical treatment, and the upper surface ( Pure water is supplied to the entire surface), and the alkaline chemical liquid adhering to the wafer W is washed away with pure water. Further, pure water is also discharged (supplied) from the lower surface supply path 85, pure water is supplied to the lower surface of the wafer W, and the alkaline chemical liquid adhering to the lower surface (back surface) of the wafer W is washed away with pure water. In this way, the wafer W is rinsed with pure water.

  When the rinsing process is sufficient, the supply of pure water from the nozzle 20 and the lower surface supply path 85 is stopped. When stopping the supply of pure water, as described above, the supply switching valve 93 is switched to connect the main supply line 90 and the aspirator 110 from the state where the main supply line 90 and the pure water supply line 99 are connected. To a state to do. In this state, the aspirator 110 is operated to suck pure water from the main supply line 90, the nozzle supply line 91, the processing fluid supply line 22, the lower surface supply line 92, and the lower surface supply path 85. Thereafter, the first and second on-off valves V1, V2 are closed.

  Next, while discharging (supplying) N 2 gas from the nozzle 20, the nozzle arm 21 is rotated to move the nozzle 20 from at least the center to the periphery of the rotating wafer W, so that the entire upper surface (surface) of the wafer W is moved. N2 gas is supplied to remove pure water. Further, N2 gas is also discharged (supplied) from the lower surface supply path 85, and N2 gas is supplied to the lower surface (back surface) of the wafer W to remove pure water. In this way, the N2 gas is supplied to the wafer W to dry the wafer W. At this time, the air is exhausted from the upper exhaust port 38a and the lower exhaust port 38f. In the drying process, the spin chuck 10 and the wafer W are rotated at a higher speed than in the acidic chemical solution process. The atmosphere containing droplets (mist) of pure water, chemicals, etc. rolled up to the lid 32b by the high-pressure portion generated on the outer peripheral extension of the wafer W by the high-speed rotation of the spin chuck 10 is exhausted from the upper exhaust port 38a. Is done. Before supplying the N2 gas, pure water is sucked from the main supply pipe line 90, the nozzle supply pipe line 91, the processing fluid supply path 22, the lower surface supply pipe line 92, and the lower surface supply path 85 by the operation of the aspirator 110. Therefore, pure water is not inadvertently pushed out from the nozzle 20 and the lower surface supply path 85, and dry N2 gas can be supplied. Further, by forming a narrow gap between the under plate 80 and the wafer W and flowing N2 gas between them, the entire lower surface (back surface) of the wafer W can be dried with a small amount of N2 gas.

  Even when the spin chuck 10 and the wafer W are rotated at a high speed during the drying process, the atmosphere containing pure water, chemical liquid droplets (mist) rolled up to the lid 32b side is efficiently exhausted from the upper exhaust port 38a. Is done. Further, the chemical solution, pure water and the like that fall below the spin chuck 10 during the chemical solution treatment and the rinse treatment are received by the cover body 50 and scattered (discharged) in the outer peripheral direction of the wafer W. Since no droplets are attached to the fixed cover body 60 side, there is no possibility that the droplets are scattered and reattached to the wafer W. Therefore, it is possible to prevent the particles from adhering to the wafer W and the water mark from being generated.

  During the drying process, N2 gas or clean air is introduced from the inlet 32i, and a downflow DF is formed in the outer chamber 32 by the N2 gas or clean air.

  When the wafer W is sufficiently dried, the supply switching valve 93, the first and second on-off valves V1, V2 are closed, and the supply of N2 gas from the nozzle 20 and the lower surface supply path 85 is stopped. Then, the rotation drive mechanism 23 is driven to rotate the nozzle arm 21, and the nozzle arm 21 is moved from the nozzle opening 32 k to the outside of the outer chamber 32. Further, the driving of the hollow motor 12 is stopped, and the rotation of the spin chuck 10 and the wafer W is stopped. When stopping the rotation of the spin chuck 10, the position of each holding member 11 is adjusted and stopped so that the operation pin is in a position where the holding member 11 can be pushed up. Further, the under plate 80 is lowered and separated from the lower surface of the wafer W.

  Further, the operation pin is raised and engaged with the holding member 11 to move (rotate) the holding member 11 to the outside, and the peripheral portion of the wafer W is supported by the temporary placement portion of the holding member 11.

  Next, the shutter 34 is lowered to open the carry-in / out opening 32 j, and the transfer arm 500 enters the outer chamber 32 from the opening 33 a of the unit chamber 33 and the carry-in / out opening 32 j of the outer chamber 32. Then, the transfer arm 500 is moved linearly in the horizontal direction to enter between the holding member 11 and between the wafer W and the under plate 80. In this state, the transfer arm 500 is raised to raise the wafer W from the holding member 11 so that the wafer W is transferred from the spin chuck 10 to the transfer arm 500. After the wafer W is held by the transfer arm 500, the transfer arm 500 is also moved linearly from above in the horizontal direction to be withdrawn from the inside of the outer chamber 32, and the loading / unloading opening 32 j is closed by the shutter 34. In this way, the cleaned wafer W from which the resist has been removed is unloaded from the cleaning processing apparatus.

  In the above embodiment, the case where the substrate processing apparatus of the present invention is applied to a semiconductor wafer cleaning processing apparatus has been described, but the present invention is not limited to this. For example, the substrate is not limited to a semiconductor wafer, but may be another glass substrate for LCD or a CD substrate.

1 is a schematic cross-sectional view showing an example of a semiconductor wafer substrate cleaning processing apparatus to which a substrate processing apparatus according to the present invention is applied. It is a schematic longitudinal cross-sectional view of the said substrate cleaning processing apparatus. It is sectional drawing (b) which follows the II line | wire of the principal part expanded sectional view (a) and (a) which shows the rectification | straightening body in this invention, and an annular gutter. It is a schematic block diagram which shows the piping system of the said board | substrate cleaning processing apparatus. It is a schematic longitudinal cross-sectional view which shows the state which carries in a wafer to the said board | substrate cleaning processing apparatus. It is a schematic longitudinal cross-sectional view which shows the acidic chemical | medical solution processing state of the said board | substrate cleaning processing apparatus. It is a schematic longitudinal cross-sectional view which shows the alkaline chemical | medical solution process of the said board | substrate cleaning processing apparatus, and a drying process state.

Explanation of symbols

10 Spin chuck (holding means)
20 nozzles (treatment liquid supply means)
30 Processing container 31 Inner cup (inner container)
31c Inner cup discharge line 32 Outer chamber (outer container)
32a Chamber body 32b Cover body 32g Upper side wall 32h Ceiling part 32i Inlet port 37 Rectifier 38 Upper exhaust mechanism 38a Upper exhaust port 38b Gas guide hole 38c Baffle plate 38d Upper exhaust port 38e Lower exhaust pipe 38f Lower exhaust port 38s Gap 39 Annular ３９ 39a Liquid discharge notch 70 Lift cylinder 300 Open / close switching valve (open / close switching means)
400 Exhaust device V On-off valve W Semiconductor wafer (substrate to be processed)

Claims (6)

A substrate processing apparatus for supplying a processing liquid to a substrate to be processed and processing the substrate,
Holding means for rotatably holding the substrate to be processed in a horizontal state;
The holding means and the substrate to be processed are stored separately from the outside, and a processing vessel provided with a clean gas inlet in the ceiling portion, and
A cylindrical rectifying body formed in a hanging shape on the processing vessel in a position outward from the substrate to be processed and the inlet in the ceiling, and an upper exhaust port provided on a side wall of the processing vessel facing the rectifying body And a substrate processing apparatus. The substrate processing apparatus according to claim 1,
A substrate processing apparatus, further comprising a disk-shaped baffle plate having a gap with the rectifier and having a gas guide hole in the center. The substrate processing apparatus according to claim 1 or 2,
A lower exhaust port is provided at a lower portion of the holding means in the processing vessel, and the lower exhaust port and the upper exhaust port are connected via an open / close switching unit that can be switched and communicated with an exhaust device. A substrate processing apparatus. The substrate processing apparatus according to claim 1 or 2,
The processing container includes an inner container that can be moved up and down with respect to the holding means to selectively hold the holding means, and an outer container that holds the inner container and the holding means,
A substrate processing apparatus, wherein an inner container exhaust port is provided in the inner container, and the inner container exhaust port and the upper exhaust port are formed so as to be independently controlled to be opened and closed. The substrate processing apparatus according to claim 1 or 2,
The processing container includes an inner container that can be moved up and down with respect to the holding means to selectively hold the holding means, and an outer container that holds the inner container and the holding means,
A lower exhaust port is provided at a lower part of the holding means in the outer container,
An inner container exhaust port is provided in the inner container,
A substrate processing apparatus, wherein the inner container exhaust port and the upper exhaust port and the lower exhaust port are formed so as to be independently openable and closable. The substrate processing apparatus according to any one of claims 1 to 5,
A substrate processing apparatus, further comprising an annular ridge disposed at a position directly below the rectifying body and having a notch for discharging liquid.

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