WO2014157827A1 - Dispositif de dépôt de couche atomique haute vitesse de type chambre - Google Patents

Dispositif de dépôt de couche atomique haute vitesse de type chambre Download PDF

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Publication number
WO2014157827A1
WO2014157827A1 PCT/KR2014/001101 KR2014001101W WO2014157827A1 WO 2014157827 A1 WO2014157827 A1 WO 2014157827A1 KR 2014001101 W KR2014001101 W KR 2014001101W WO 2014157827 A1 WO2014157827 A1 WO 2014157827A1
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Prior art keywords
chamber
lower chamber
atomic layer
deposition apparatus
substrate
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PCT/KR2014/001101
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English (en)
Korean (ko)
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최용암
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(주)대흥정밀산업
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Publication of WO2014157827A1 publication Critical patent/WO2014157827A1/fr

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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Definitions

  • the present invention relates to an atomic layer deposition apparatus, and more particularly, the deposition process while rotating the lower chamber on which the substrate is placed, 0.1 thickness that could not be formed in the conventional deposition apparatus such as batch type (batch type)
  • the present invention relates to a chamber type atomic layer high-speed deposition apparatus in which an ultra-thin atomic layer of about nm is formed very uniformly on a substrate, and the productivity is greatly improved.
  • the width of wiring which is a design standard of semiconductors, is required to have a width of 30 nm or less
  • an atomic layer deposition method ALD
  • ALD atomic layer deposition method
  • Deposition has become so high that the thin film formed by the ALD method can form a very thin film, almost no impurities in the film, precise composition control, and adsorption rather than deposition. Because of the formation of the step coverage (step coverage) close to 100% in any complex shape structure, etc. is now widely spotlighted.
  • the substrate is placed in a vacuum reaction chamber, and a precursor is deposited on the substrate to deposit an atomic layer (about 0.1 nm in thickness), followed by argon (Ar) or nitrogen (N 2 ) gas to supply the reactant.
  • Ar argon
  • N 2 nitrogen
  • the exposure time of the showerhead for supplying the reactant to each of the disc-shaped substrates is not uniform, resulting in a different film thickness for each substrate.
  • the rotary drive unit for rotating the block supporting the substrate since the atomic layer deposition process proceeds in a vacuum atmosphere, the rotary drive unit for rotating the block supporting the substrate must be disposed in the reaction chamber, so that fine particles are generated by friction during rotation. There is a problem of sticking to the floor and causing a defect.
  • Applicant of the present invention while applying a lot of research and development in order to solve the above problems developed and applied for the patent application 2013-12755 "atomic layer high-speed deposition apparatus," it was further developed to reach the present invention.
  • the present invention has been made to solve the above problems, an object of the present invention, the lower chamber on which the substrate to form the atomic layer thin film is placed, and the module for supplying the first and second reactants alternately installed
  • the system consists of an upper chamber with a module for supplying separation gas therebetween.
  • the upper chamber is fixed while depositing an atomic layer every time the lower chamber is rotated while the upper chamber is fixed. It is an object of the present invention to provide a chamber type atomic layer high-speed deposition apparatus capable of significantly improving productivity by forming an ultra-thin atomic layer of about nm very uniformly.
  • Another object of the present invention by placing the drive unit for rotating the lower chamber outside the chamber, by blocking the fine particles that must occur during operation of the drive to the substrate itself to increase the cleanness inside the chamber to increase the process stability It is to provide a chamber type atomic layer high-speed deposition apparatus that can be improved.
  • the chamber type atomic layer high-speed deposition apparatus has a substrate placed at an equal interval on the top, and has a lifting means and a vacuum pumping part for elevating the substrate, respectively, of the driving means.
  • a ring-shaped lower chamber adapted to rotate by driving;
  • a lower chamber support frame installed at a lower portion of the lower chamber to support the lower chamber and to guide the lower chamber to be rotated;
  • the first and second modules for supplying and discharging the first and second reactants, respectively, are alternately installed at regular intervals, and the separation gas is supplied between the first and second modules.
  • the lower chamber is a ring-shaped as a whole, the lower block protrudes in the upper direction of the side walls along the edge of both ends;
  • a first stage that is plate-shaped in a ring shape and is positioned between both sidewalls while both ends thereof extend across both sidewalls of the lower block;
  • a second stage positioned at equal intervals along the ring shape of the first stage and on which the substrate is placed;
  • a vacuum pumping part mounted at a lower portion of the lower block to maintain the inside of the lower chamber in a vacuum state; Elevating means for elevating the substrate when replacing the substrate; Heating means mounted to a lower portion of the second stage; Comprising a flow path formed along both side walls of the lower block for circulating the cooling water.
  • the slits opened to the upper and lower surfaces are intermittently formed on the inner side and the outer side of the portion where the second stage is located in the first stage, the directions in which the slits are opened are alternately arranged.
  • the grooves of the circular shape opened to the upper surface is formed, two to four grooves forming concentric circles are formed at equal intervals, and an O-ring is inserted between the first and second stages for sealing.
  • each of the lifting pins are located at the vertices of the triangular shape, the tip is disposed so as to contact the lower surface of the substrate, the lifting pins for lifting the substrate while lifting when replacing the substrate;
  • a plate disposed below the lower chamber and having a lower end of the elevating pin fixed on an upper surface thereof; Located in the lower portion of the plate, it is configured to include a cylinder which is driven by a motor to lift the plate.
  • the heating means of the lower chamber the heater mounted on the lower surface of the second stage;
  • the insulating flange is further provided, and a spring is mounted between the power rod and the insulating flange to closely contact the heater and the second stage.
  • the driving means of the lower chamber comprises a servo motor for generating a driving force, and a drive gear coupled to the drive shaft of the servo motor, wherein the gear formed on the outer surface of the inner wall of the lower chamber is engaged with the drive gear to drive. While rotating the lower chamber.
  • the upper chamber has the same ring shape as the lower chamber and has an upper block with sidewalls protruding downward along the edges of both ends, and stages are formed on the lower surfaces of both sidewalls of the upper block.
  • Concave-convex is formed at the stage located in the first block, and the first and second modules are alternately installed between both sidewalls of the upper block, and the third module is installed between the first and second modules.
  • Flow paths are formed along both sidewalls of the upper block so as to circulate.
  • each of the first and second modules installed alternately at regular intervals may include a main body having a trapezoidal plane and a hexahedron shape having a lower surface;
  • a reactant shower head which is plate-shaped and is positioned inside the main body, and has uniformly formed through-holes throughout the plate to supply the first and second reactants to the substrate;
  • a hollow part formed between an upper surface of the main body and a reactant shower head;
  • a reaction material supply pipe installed at an upper surface of the main body to supply first and second reaction materials to the hollow part; While being formed at regular intervals between the main body and the reactant shower head, it is provided with a vacuum discharge pipe for discharging the first and second reactant and the separation gas.
  • the third module is trapezoidal shape, the main body of the hexahedral shape;
  • a first shower head which is plate-shaped and is positioned inside the main body and has a first through hole uniformly over the entire plate shape;
  • a first space formed between an upper surface of the main body and a first shower head;
  • Separation gas supply pipe for supplying a separation gas to the first space;
  • a second space portion formed between the first shower head and a lower surface of the main body; It is plate-shaped, and the 2nd through hole is formed uniformly over the whole,
  • the said 1st through hole is a perpendicular direction.
  • the second through hole is formed to be inclined by a predetermined angle to both sides along the longitudinal center line of the third module.
  • the upper chamber support frame is a hollow pipe shape
  • the support post is installed vertically through the center of the ring-shaped chamber consisting of the upper chamber and the lower chamber;
  • a support bar having a center fixed to an upper end of the support post and having a flat cross shape;
  • An LM guide installed vertically at each end of the support bar; It is provided at the front end of the LM guide, the end is provided with a fastening member which is fixed to the upper surface of the upper chamber.
  • the upper and lower surfaces of both sidewalls of the lower chamber and the upper chamber are formed with irregularities to be engaged with each other so that they are coupled to each other to form a chamber therein, and the recessed portion of the lower chamber is filled with a magnetic fluid, and A magnet is mounted under the uneven portion of the chamber.
  • the vacuum pumping unit a normal close vacuum valve (normal close) mounted on the lower portion of the lower chamber;
  • First and second bellows vacuum pipes each having a flange portion formed at an upper end and a lower end thereof, and having springs mounted between both flange parts and connected to the vacuum valve;
  • a second bellows vacuum pipe having a flange portion formed at an upper end and a lower end thereof, the lower end of which is connected to a vacuum pump;
  • a lifting plate coupled and fixed to a flange portion formed at an upper end of the second bellows vacuum pipe;
  • the chamber type atomic layer high-speed deposition apparatus having the above configuration features constitutes a process chamber of a new structure that is completely different from the atomic layer deposition equipment so far, and the substrate can be placed and rotated.
  • a lower chamber having a large ring shape and a lower chamber having a large radius, the lower chamber having a lower chamber installed therein and the upper chamber having a module for supplying the first and second reactants alternately installed therebetween and a module for supplying a separation gas therebetween.
  • new atomic layers are continuously deposited as the substrates pass adjacent reactant supply modules, which significantly improves productivity compared to conventional atomic layer deposition equipment. Can be.
  • the chamber type atomic layer high-speed deposition apparatus of the present invention is configured by arranging a driving unit for rotating the lower chamber outside the chamber, fine particles that may occur during operation of the driving unit may fundamentally block access to the substrate itself. Therefore, the process stability can be improved by increasing the cleanliness of the chamber, and the planar shape of the shower head which is mounted on the upper chamber to supply the reaction material by increasing the ring shape radius of the lower chamber has a trapezoidal shape that is close to a rectangle, so that each part of the substrate Since the exposure time to the reactant showerhead is almost uniform, the thickness of the film is uniform for each substrate part, thereby significantly improving product quality.
  • FIG. 1 is a perspective view of a deposition apparatus according to the present invention.
  • Figure 2 is a view showing a lower chamber rotation rail.
  • FIG 3 is a view showing a support structure for supporting the upper chamber.
  • FIG 4 is a view illustrating a state in which the upper chamber and the lower chamber are assembled.
  • FIG. 5 is a cross-sectional view of the upper chamber and the lower chamber assembled.
  • FIG. 6 is a view showing the lower chamber.
  • FIG. 7 is a view illustrating a vacuum pumping unit.
  • FIG. 8 is a cross-sectional view illustrating a structure for supplying power to a heating line of a lower chamber.
  • FIG. 9 is a view illustrating an embodiment of a heater mounted to the lower chamber.
  • FIG. 10 illustrates first and second modules for supplying and discharging reactants.
  • FIG. 11 is a view showing a third module for supplying a separation gas.
  • FIG. 12 is a view illustrating a gas supply line.
  • the chamber type atomic layer high-speed deposition apparatus is a process chamber of a novel structure that is completely different from the atomic layer deposition equipment so far.
  • the biggest technical feature is the lower chamber on which the substrate is placed, and the substrate. It consists of an upper chamber with alternating modules to supply reactants and separation gas to each other.
  • the deposition apparatus is a device for rapidly depositing a thin film having an atomic layer thickness by rotating a lower chamber 20 on which a substrate is placed, and supplying a reactant to the upper substrate through the upper chamber 40.
  • the chamber 40 is fixedly supported by the upper chamber support frame 30, and the lower chamber 20 has a lower chamber rotary rail 12 fixed on the frame 11 of the lower chamber support frame 10. It is configured to slide and rotate.
  • the lower chamber 20 has a ring shape in which the inner side wall and the outer side wall are formed at the inner side and the outer side, respectively, and the side walls protrude upward along the edges of both ends of the lower block 21.
  • a ring-shaped first stage 23 is installed, and a circular second stage 24 is installed along the first stage 23 at equal intervals so that the substrate is placed on the second stage 24.
  • a lifting means 25 for elevating and lowering each substrate when the substrates are replaced for each part on which each substrate is placed, and a vacuum pumping part 26 for maintaining the inside of the lower chamber 20 in a vacuum state.
  • the lower chamber 20 is rotated by the driving means 22 installed outside the chamber.
  • a heating means 27 is provided below the second stage 24 on which the substrate is placed in the lower chamber 20.
  • the driving means 22 includes a servo motor 221 for generating a driving force and a driving gear 222 coupled to a drive shaft of the servo motor 221, which is formed on the outer surface of the inner wall of the lower chamber 20.
  • the gear 211 is engaged with the driving gear 222 to rotate the lower chamber 20 (see FIG. 4). Since the driving means 22 for rotating the lower chamber 20 is installed outside the chamber, the cleanliness of the chamber can be further increased.
  • the first stage 23 is plate-shaped in a ring shape, and both ends thereof are interposed between the inner wall and the outer wall of the lower block 21, and the first stage 23 forms a through hole at equal intervals to form a circular second stage ( 24 is mounted, and the substrate is placed on the second stage 24.
  • An O-ring is inserted between the first and second stages 23 and 24 to seal the upper chamber 40 and the lower chamber 20 while the substrate is placed on the second stage 24.
  • the second stage 24 has to use a non-conductive material while having heat resistance to withstand even if heated to several hundred degrees Celsius. Or it is preferable to use quartz.
  • Slits 231 are formed intermittently on the inner and outer sides of the first stage 23 where the second stage 24 is located, the slits 231 which are respectively opened to the upper and lower surfaces, and the slits 231 to prevent heat transfer. It is preferable to arrange this opening direction alternately.
  • the second stage 24 is formed with a groove 241 which is open to the upper surface, the groove 241 is a circular shape, it is preferable to form two to four concentric circles at equal intervals, the upper portion of the substrate Since there is a pressure difference between the bottom and the groove 241 serves to allow the substrate to be adsorbed to the second stage (24).
  • the lifting unit 25 is coupled with the driving plate 255.
  • the lifting pins 251 are lifted and finally lifted the substrate.
  • the lift pins 251 are positioned at the vertices of the triangular shape, respectively, and penetrate through the lower chamber 20 on which the heater 26 and the substrate are placed so that the tip of the lift pin 251 contacts the lower surface of the substrate. It is a supporting configuration.
  • the plate 252 is disposed to be positioned below the lower chamber 20, the lower end of the lifting pin 251 is fixed to the upper surface, the cylinder 254 is located below the drive plate 255 It is driven by the motor 253 to raise and lower the driving plate 255.
  • Reference numeral 256 is a corrugated pipe installed between the lower surface of the lower chamber 20 and the upper surface of the plate 252.
  • the lifting pins 251 need not be three because they can be lifted by supporting the substrate, and the lifting means 25 is a means that can lift the plate 252 even if the motor 253 and the cylinder 254 are not. Any configuration is fine.
  • the vacuum pumping part 26 is configured to maintain the inside of the lower chamber in a vacuum state so that the substrate is in close contact with the upper surface of the second stage 24 of the lower chamber 20.
  • the elevating plate 265, the second bellows vacuum pipe 267 and the cylinder 268 is the lower chamber support frame 10
  • the upper surface of the elevating plate 265 is in close contact with or separated from the lower surface of the flange portion formed at the lower end of the first bellows vacuum pipe 262 and operates to reach a constant vacuum degree.
  • only one vacuum pump 26 may be installed, two vacuum pumps 26 may be provided at positions corresponding to each other for rapid vacuum formation in the lower chamber 20.
  • the vacuum valve 261 is mounted on the lower part of the lower chamber 20 and is of a normal close type. One end of the vacuum pipe 261 is connected to the lower surface of the lower chamber 20 by a pipe, and there is no air supply. In this case, the valve is closed by the force of its own spring.
  • the first bellows vacuum pipe 262 connected to the vacuum valve 261 has flange portions formed at upper and lower ends thereof, and a plurality of springs 263 are mounted at equal intervals between both flange portions. It is preferable to install a guide for guiding when the spring is compressed or extended.
  • a second bellows vacuum pipe 267 having a lower end connected to a vacuum pump has a flange portion formed at an upper end and a lower end thereof, and a lifting plate 265 is fixedly coupled to a flange portion formed at an upper end of the second bellows vacuum pipe 267.
  • the lower end of the elevating plate 265 is equipped with a cylinder 268.
  • One end of the cylinder 268 is fixed to the frame 11 of the lower chamber support frame 10 by the reinforcing plate 269, the lifting plate 265 is lifted by the operation of the cylinder 268 to raise and lower the plate (
  • the flange portion formed at the upper surface of the upper surface 265 and the lower end of the first bellows vacuum pipe 262 is detached to control the degree of vacuum inside the lower chamber.
  • the configuration for elevating the elevating plate 265 does not necessarily need to be a cylinder, and may be used with other operating mechanisms for elevating.
  • the lifting plate 265 is provided with a pneumatic port 266 for supplying air pressure (air) to the upper portion, and a pneumatic port 266 is formed at the flange formed at the lower end of the first bellows vacuum pipe 262.
  • Pneumatic tube fastening portion 264 is provided to receive the pneumatic pressure supplied through the connection with the drive portion of the vacuum valve 261, thereby driving the vacuum valve 261 by the supplied pneumatic pressure.
  • the pneumatic port 266 may be of various shapes, but preferably in the form of a cockle with a hole in the center, and a sealing material should be mounted around the cockle for sealing.
  • the vacuum pumping unit 26 forms a vacuum in the lower chamber after the deposition operation is completed and the substrate is replaced and the valve of the gate 411 installed on the side wall of the upper chamber 40 is closed.
  • the pneumatic cylinder (not shown) is operated, the cylinder 268 operates to raise and lower the lifting plate 265, and as the spring 263 is compressed, the first bellows vacuum pipe 262 and the lifting plate 265 have a constant force. It is possible to seal during lower chamber pumping (vacuum) because it is compressed in the At this time, the pneumatic pressure for opening the normally closed vacuum valve 261 mounted on the lower chamber is connected to the driving unit of the vacuum valve 261 to pump the lower chamber.
  • the valve When the gauge (not shown) for monitoring the vacuum level of the lower chamber reaches the set pressure, the valve is closed and the cylinder is closed while the pneumatic pressure supplied to drive the vacuum valve 261 mounted on the lower chamber 20 is cut off. 268 is lowered. As the vacuum line of the lower chamber is separated from the vacuum line from the frame 11 to the vacuum pump (not shown), the lower chamber 20 can be rotated and the lower chamber maintains a constant degree of vacuum during the process. do.
  • the heating means 27 is mounted on the lower part of the second stage 24 to heat up to several hundred degrees Celsius.
  • the heater 271 is mounted on the lower surface of the second stage 24.
  • a power load 272 supplies power to the heater 271, and a power inlet 273 contacts the power rail 13 to receive power to supply the power rod 272.
  • the power inlet 273 is mounted at the lower end of the power rod 272. Since the lower surface is in contact with the power rail 13, the tip may be in the form of a brush, but in the shape of a roller and wear-resistant graphite (graphite) material Preference is given to using.
  • the heating means 27 is preferably provided with an insulating flange 274 is mounted on the lower surface of the lower block 21, the upper end is disposed at a predetermined distance from the power rod 272, the heater 271 And a spring 275 is preferably mounted between the power rod 272 and the insulating flange 274 in order to bring the second stage 24 into close contact with the second stage 24.
  • the heater 271 includes a heater body 271a having the same shape as the planar shape of the second stage 24 and a slit opened to one side only from both sides of the heater body 271a ( 272b are formed at regular intervals, and in order to prevent thermal deformation that changes in shape even when the heater main body 271a is heated, it is preferable that the opened directions of the slit 272b are alternately arranged, and the heater main body 271a ), A hole through which the lifting pins 251 penetrate should be formed.
  • cooling water ('coolant' refers to any liquid substance having a cooling function for maintaining the heated chamber at a constant temperature. It is the same in the specification) to form a flow path 28 along the inner wall and the outer wall of the lower block 21, the rotary joint 35 on top of the support post 31 of the upper chamber support frame 30
  • the cooling water supplied through the rotary joint 35 is supplied to the flow path 28 of the lower chamber through the cooling water pipe 29.
  • the end of the coolant pipe 29 is connected to the flow path 28 so that the rotary joint 35 also rotates to supply the coolant as the lower chamber 20 rotates, and flows into the flow path formed on the outer wall of the lower block 21.
  • the coolant turns around the outer wall of the lower block 21 and then enters a flow path formed in the inner wall of the lower block 21 to flow back around the inner wall.
  • the upper chamber 40 is fixed to the flow path 48 formed in the upper chamber 40 to supply the coolant directly through the pipe from the outside.
  • the rotary joint 35 is installed on the upper end of the support post 31 and rotates together with the lower chamber 20.
  • the rotary joint 35 supplies and recovers the cooling water to the lower chamber 20 through different ports in the joint part 351 located at the bottom thereof.
  • the lower chamber supporting frame 10 has a pair of lower chamber rotating rails 12 formed in a circular shape to guide the lower chamber 20 to rotate, and lower ends of the lower chamber supporting frame 10 are disposed at equal intervals and are arranged at a lower portion. And a frame 11 for holding and supporting the chamber rotary rail 12 and a pair of power rails 13 mounted on the frame 11 to supply electric power, and a part of the vacuum pumping part 26 is provided. It is mounted and configured, it may be configured by arranging the first and second reactant supply pipe 14 for supplying the first and second reactant, respectively.
  • the lower surface of the lower chamber 20 is to slide the upper surface of the lower chamber rotary rail 11, the lower chamber rotary rail 12 is preferably formed in two lines rather than one rail for the stability of the chamber.
  • the upper chamber 40 is fixed while being positioned in the upper portion of the lower chamber 20, and has the same ring shape as the lower chamber 20, and has an upper block 41 in which side walls protrude downward along the edges of both ends.
  • the first and second modules 42 and 43 for supplying and discharging the first and second reactants, respectively, are alternately installed at regular intervals between the inner and outer walls of the upper block 41.
  • a third module 44 for supplying the separation gas is provided, each of the flow paths 48 through which the coolant is circulated along the inner and outer walls of the upper block 41, respectively.
  • the outer wall of the upper block 41 is provided with a gate 411 that is opened when the substrate is replaced to take out the deposited substrate with the equipment (robot) and insert the substrate to be deposited, the upper chamber 40 ) Is in the same ring shape as the lower chamber 20, respectively on the inner and outer parts.
  • An inner wall and an outer wall are formed and a module is mounted therebetween.
  • the module is not installed in the portion where the gate 25 is installed.
  • the upper part of the upper chamber 40 is provided with a discharge line 36 for discharging the first and second reactants and the separated gas, respectively, and a control unit 37 for controlling the amount of the separated gas. Since the flow rate of the reactant and the separated gas is not constant, the reactant and the separated gas are discharged to the outside through the discharge line 36 until it stabilizes, and after the stabilized, the discharge line 36 is discharged. It closes and supplies reactants and separation gas to the substrate.
  • the first reactant is TMA (tri methyl aluminum)
  • the second reactant is H 2 O molecules
  • the separation gas is argon (Ar) or nitrogen (N 2 ). Preference is given to using gases.
  • the first and second modules 42 and 43 have the same shape, which are alternately installed at regular intervals, so that the modules must be continuously arranged at equal intervals along the ring shape in the ring-shaped upper chamber 40,
  • the module main bodies 421 and 431 have the length of the side farther from the center of rotation to be longer than the length of the side closer to each other, so that the planar shape is trapezoidal close to a rectangle or the two sides are curved in parallel (the plane is called a 'trapezoid' shape).
  • the two sides side by side in the trapezoid is a curve forming a part of an arc, and includes a shape that forms a circle when assembled as a whole, and in this specification, the term 'trapezoidal shape' is used in this sense) and the bottom surface is opened. It is a cube shape (refer FIG. 10).
  • the reactant shower heads 422 and 432 are configured to have uniform holes throughout the plate for supplying the first and second reactants to the substrate.
  • the shower heads 422 and 432 are located inside the main body 421 and 431. In this way, the uniformly formed through-holes allow the reactants to be adsorbed by supplying the reactants uniformly and quickly throughout the substrate.
  • Hollow parts 423 and 433 are formed between the upper surfaces of the main bodies 421 and 431 and the reactant shower heads 422 and 432, and the hollow parts 423 and 433 are formed on the upper surfaces of the main bodies 421 and 431.
  • Reactant supply pipes 424 and 434 for supplying the first and second reactants are provided (see FIG. 10).
  • Vacuum discharge pipes 425 and 435 are formed at regular intervals in the peripheral area surrounding the head.
  • the third module 44 is installed between the first module 42 and the second module 43 alternately installed to supply the separation gas to the upper portion of the substrate, the main body has a planar shape of the first and second modules It has a trapezoidal shape close to the rectangle as in (42, 43), and its cross section is a cube shape having a ' ⁇ ' shape.
  • the separation gas supplied from the upper portion of the main body through the separation gas supply pipe 441 is supplied to the first space 442 formed between the upper surface of the main body and the first shower head 443, and then the first shower head ( 443 is supplied to the second space portion 444 formed between the first shower head 443 and the lower surface of the main body (same as the second shower head), and the first shower head 443 and the second shower head. Via 445 is supplied to the upper substrate.
  • the first shower head 443 is positioned between the upper and lower surfaces of the main body of the third module 44.
  • the first shower head 443 is plate-shaped and is located inside the main body, and uniformly spreads the entire first plate. Through holes are formed.
  • the second shower head 445 is a lower surface of the main body, the second through-hole is uniformly formed throughout, and supplies the separation gas in the second space 444 to the upper portion of the substrate.
  • the first through hole formed in the first shower head 443 is formed in the vertical direction
  • the second through hole formed in the second shower head 445 is the longitudinal center line of the third module 44 (when viewed from the whole chamber). It is preferable to be formed to be inclined by a predetermined angle to both sides along the radial direction (the second through hole is formed in a / ⁇ shape when viewed as a whole of the second shower head, see FIG. 11).
  • the second through holes formed in the second shower head 445 are formed to be inclined in both directions so that the vacuum discharge pipes 425 and 435 are disposed on both sides of the reaction material deposited on the substrate with respect to the third module 44.
  • the lower ends of the first and second modules 42 and 43 and the third module 44 have a fine gap (within 1 mm) within the upper surface of the substrate, and the narrower the gap, the first and second reactants are mixed. Can be effectively prevented) and the separation gas supplied through the third module 44 together with the reactants supplied through the first and second modules 42 and 43 together with the first and second It is discharged through the vacuum discharge pipe (425, 435) formed in the two modules (42, 43).
  • the upper chamber support frame 30 is a hollow pipe-shaped support post 31 which is installed vertically through a ring-shaped chamber center composed of an upper chamber 40 and a lower chamber 20, and a support post (center). 31 is fixed to the upper end of the support bar (32) having a planar cross shape, LM guide 33 is installed vertically downward from each end of the support bar 32, and the LM guide ( It is provided with a fastening member 34 which is installed at the front end of 33) and the end is coupled to the upper surface of the upper chamber 40.
  • the upper chamber support frame 30 configured as described above supports the upper chamber 40 fixedly and operates the LM guide 33 when cleaning or repairing the chamber for maintenance of the chamber such as removing foreign matters accumulated in the chamber. Raise the upper chamber 40 to put down again after the work is finished.
  • ends are formed on upper surfaces of both sidewalls of the lower block 21, and irregularities are formed on ends positioned outside the sidewalls, and ends are formed on both lower surfaces of the upper block 41.
  • the main part of the chamber 20 is filled with a magnetic fluid
  • the lower part of the lower part of the chamber 20 is equipped with a magnet 212.
  • the magnet 212 is magnetic, the magnetic fluid reacts to interlock the unevenness. It will be sealed.
  • a sealing material may be inserted instead of the magnetic fluid, or a fluid having a certain viscosity may be filled and sealed. If the sealing material is inserted or the fluid is filled, the magnet 212 is not required.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

La présente invention concerne un dispositif de dépôt de couche atomique à haute vitesse de type chambre, servant à réaliser un processus de dépôt tout en faisant tourner une chambre inférieure, sur laquelle est placé un substrat, formant de ce fait une couche atomique de film ultra mince ayant une épaisseur d'environ 0,1 nm, dont la formation aurait été impossible en utilisant un dispositif de dépôt de type à procédé discontinu classique, par exemple, sur le substrat de manière très uniforme avec une productivité sensiblement améliorée. Le dispositif de dépôt de couche atomique à haute vitesse du type chambre selon la présente invention comprend : une chambre inférieure en forme d'anneau, au-dessus de laquelle des substrats sont placés selon un intervalle uniforme, la chambre inférieure ayant un moyen de soulèvement/abaissement servant à soulever et à abaisser les substrats, respectivement, et une unité de pompage à vide, la chambre inférieure étant mise en rotation par l'entraînement d'un moyen d'entraînement ; un cadre de support de chambre inférieure installé en dessous de la chambre inférieure afin de supporter la chambre inférieure, le cadre de support de la chambre inférieure étant équipé d'un rail de rotation de chambre inférieure servant à guider la chambre inférieure et à lui permettre de tourner ; une chambre supérieure positionnée au-dessus de la chambre inférieure, la chambre supérieure comportant des premiers et des deuxièmes modules installés alternativement selon des intervalles prédéterminés afin d'alimenter et de décharger des matériaux de première et de seconde réaction, respectivement, des troisièmes modules étant installés entre les premiers et les deuxièmes modules pour une alimentation en gaz de séparation, une porte étant installée sur la paroi latérale de la chambre supérieure et se trouvant ouverte lorsque les substrats sont replacés ; et un cadre de support de chambre supérieure fixé à la partie supérieure de la chambre supérieure pour fixer/supporter la chambre supérieure, le cadre de support de la chambre supérieure étant configuré pour être capable de soulever/abaisser la chambre supérieure. La chambre inférieure tourne tandis que la surface inférieure de la chambre inférieure coulisse sur le rail de rotation de la chambre inférieure, déposant de ce fait une couche atomique sur les substrats.
PCT/KR2014/001101 2013-03-26 2014-02-11 Dispositif de dépôt de couche atomique haute vitesse de type chambre WO2014157827A1 (fr)

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KR10-2013-0032130 2013-03-26

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US20180363134A1 (en) * 2017-06-19 2018-12-20 Tokyo Electron Limited Film forming method, film forming apparatus, and computer readable storage medium
CN112239849A (zh) * 2019-07-01 2021-01-19 无锡科硅电子技术有限公司 一种薄膜生长系统及方法
CN112481604A (zh) * 2020-12-03 2021-03-12 无锡市邑晶半导体科技有限公司 一种ald加工设备以及加工方法
CN112490145A (zh) * 2020-11-05 2021-03-12 中国计量大学 一种真空脱泡设备
CN112853317A (zh) * 2021-01-04 2021-05-28 中国计量大学 一种ald镀膜设备

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KR102372418B1 (ko) 2019-11-28 2022-03-08 한국생산기술연구원 회전형 진공 공정챔버의 씰링 구조
JP7098677B2 (ja) 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
KR102306905B1 (ko) * 2021-04-12 2021-09-29 주식회사 한화 리프트부를 구비한 기판 처리 장치

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CN112490145A (zh) * 2020-11-05 2021-03-12 中国计量大学 一种真空脱泡设备
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CN112481604B (zh) * 2020-12-03 2023-09-08 无锡邑文电子科技有限公司 一种ald加工设备以及加工方法
CN112853317A (zh) * 2021-01-04 2021-05-28 中国计量大学 一种ald镀膜设备
CN112853317B (zh) * 2021-01-04 2024-01-23 中国计量大学 一种ald镀膜设备

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