CN112481604A - 一种ald加工设备以及加工方法 - Google Patents
一种ald加工设备以及加工方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Application Number | Priority Date | Filing Date | Title |
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CN202011412184.4A CN112481604B (zh) | 2020-12-03 | 2020-12-03 | 一种ald加工设备以及加工方法 |
PCT/CN2020/141154 WO2022116339A1 (zh) | 2020-12-03 | 2020-12-30 | 一种ald加工设备以及加工方法 |
US18/325,094 US20230304152A1 (en) | 2020-12-03 | 2023-05-29 | Ald processing apparatus and processing method |
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CN202011412184.4A CN112481604B (zh) | 2020-12-03 | 2020-12-03 | 一种ald加工设备以及加工方法 |
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CN112481604A true CN112481604A (zh) | 2021-03-12 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113881931A (zh) * | 2021-10-11 | 2022-01-04 | 湘潭大学 | 一种cvd装置及其分散进气方法 |
CN114084870A (zh) * | 2021-12-17 | 2022-02-25 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 高真空状态下薄壳器件盖板组合式拾取机构 |
CN115341193A (zh) * | 2022-09-13 | 2022-11-15 | 披刻半导体(苏州)有限公司 | 一种原子层沉积设备 |
WO2022238611A1 (en) * | 2021-05-10 | 2022-11-17 | Picosun Oy | Substrate processing apparatus and method |
CN116043195A (zh) * | 2023-03-01 | 2023-05-02 | 无锡邑文电子科技有限公司 | 一种加热装置及ald设备 |
CN116219407A (zh) * | 2023-03-01 | 2023-06-06 | 无锡邑文电子科技有限公司 | 一种传输装置及ald镀膜设备 |
CN116219406A (zh) * | 2023-03-01 | 2023-06-06 | 无锡邑文电子科技有限公司 | 一种上下传输装置及ald镀膜设备 |
CN116288272A (zh) * | 2023-03-01 | 2023-06-23 | 无锡邑文电子科技有限公司 | 一种原子层沉积设备 |
CN116288271A (zh) * | 2023-03-01 | 2023-06-23 | 无锡邑文电子科技有限公司 | 一种水平传输装置和原子层沉积设备 |
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CN101003033A (zh) * | 2006-01-19 | 2007-07-25 | 韩商奥拓股份有限公司 | 气体分离型喷头 |
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CN102560422A (zh) * | 2011-12-23 | 2012-07-11 | 嘉兴科民电子设备技术有限公司 | 多片远程等离子体增强原子层沉积腔室 |
WO2014157827A1 (ko) * | 2013-03-26 | 2014-10-02 | (주)대흥정밀산업 | 챔버타입의 원자층 고속 증착장치 |
US20150059981A1 (en) * | 2013-08-30 | 2015-03-05 | Applied Materials, Inc. | Hot wall reactor with cooled vacuum containment |
CN104916564A (zh) * | 2014-03-13 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室以及等离子体加工设备 |
CN105206558A (zh) * | 2014-05-27 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片边缘的保护机构、反应腔室及半导体加工设备 |
CN107740064A (zh) * | 2017-09-28 | 2018-02-27 | 北京创昱科技有限公司 | 一种用于密封真空腔室冷却设备的密封装置及其拆卸方法 |
CN108103479A (zh) * | 2017-12-26 | 2018-06-01 | 德淮半导体有限公司 | 用于气相沉积的喷头 |
CN109518165A (zh) * | 2018-07-02 | 2019-03-26 | 南京原磊纳米材料有限公司 | 一种原子层沉积批量生产设备 |
CN109637952A (zh) * | 2018-12-18 | 2019-04-16 | 北京北方华创微电子装备有限公司 | 腔室进气结构以及反应腔室 |
CN109689930A (zh) * | 2016-09-16 | 2019-04-26 | 皮考逊公司 | 用于原子层沉积的设备和方法 |
CN110013817A (zh) * | 2019-05-21 | 2019-07-16 | 江苏迈纳德微纳技术有限公司 | 一种原子级别粉末改性设备 |
CN209260200U (zh) * | 2018-12-28 | 2019-08-16 | 云南北方奥雷德光电科技股份有限公司 | 一种横流式原子层沉积腔室 |
CN214937792U (zh) * | 2020-12-03 | 2021-11-30 | 无锡市邑晶半导体科技有限公司 | 一种ald加工设备 |
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2020
- 2020-12-03 CN CN202011412184.4A patent/CN112481604B/zh active Active
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CN101003033A (zh) * | 2006-01-19 | 2007-07-25 | 韩商奥拓股份有限公司 | 气体分离型喷头 |
CN102046856A (zh) * | 2008-05-27 | 2011-05-04 | 皮考逊公司 | 用于沉积反应器的方法和装置 |
CN102560422A (zh) * | 2011-12-23 | 2012-07-11 | 嘉兴科民电子设备技术有限公司 | 多片远程等离子体增强原子层沉积腔室 |
WO2014157827A1 (ko) * | 2013-03-26 | 2014-10-02 | (주)대흥정밀산업 | 챔버타입의 원자층 고속 증착장치 |
US20150059981A1 (en) * | 2013-08-30 | 2015-03-05 | Applied Materials, Inc. | Hot wall reactor with cooled vacuum containment |
CN104916564A (zh) * | 2014-03-13 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室以及等离子体加工设备 |
CN105206558A (zh) * | 2014-05-27 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片边缘的保护机构、反应腔室及半导体加工设备 |
CN109689930A (zh) * | 2016-09-16 | 2019-04-26 | 皮考逊公司 | 用于原子层沉积的设备和方法 |
CN107740064A (zh) * | 2017-09-28 | 2018-02-27 | 北京创昱科技有限公司 | 一种用于密封真空腔室冷却设备的密封装置及其拆卸方法 |
CN108103479A (zh) * | 2017-12-26 | 2018-06-01 | 德淮半导体有限公司 | 用于气相沉积的喷头 |
CN109518165A (zh) * | 2018-07-02 | 2019-03-26 | 南京原磊纳米材料有限公司 | 一种原子层沉积批量生产设备 |
CN109637952A (zh) * | 2018-12-18 | 2019-04-16 | 北京北方华创微电子装备有限公司 | 腔室进气结构以及反应腔室 |
CN209260200U (zh) * | 2018-12-28 | 2019-08-16 | 云南北方奥雷德光电科技股份有限公司 | 一种横流式原子层沉积腔室 |
CN110013817A (zh) * | 2019-05-21 | 2019-07-16 | 江苏迈纳德微纳技术有限公司 | 一种原子级别粉末改性设备 |
CN214937792U (zh) * | 2020-12-03 | 2021-11-30 | 无锡市邑晶半导体科技有限公司 | 一种ald加工设备 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022238611A1 (en) * | 2021-05-10 | 2022-11-17 | Picosun Oy | Substrate processing apparatus and method |
CN113881931A (zh) * | 2021-10-11 | 2022-01-04 | 湘潭大学 | 一种cvd装置及其分散进气方法 |
CN114084870A (zh) * | 2021-12-17 | 2022-02-25 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 高真空状态下薄壳器件盖板组合式拾取机构 |
CN115341193A (zh) * | 2022-09-13 | 2022-11-15 | 披刻半导体(苏州)有限公司 | 一种原子层沉积设备 |
CN116043195A (zh) * | 2023-03-01 | 2023-05-02 | 无锡邑文电子科技有限公司 | 一种加热装置及ald设备 |
CN116219407A (zh) * | 2023-03-01 | 2023-06-06 | 无锡邑文电子科技有限公司 | 一种传输装置及ald镀膜设备 |
CN116219406A (zh) * | 2023-03-01 | 2023-06-06 | 无锡邑文电子科技有限公司 | 一种上下传输装置及ald镀膜设备 |
CN116288272A (zh) * | 2023-03-01 | 2023-06-23 | 无锡邑文电子科技有限公司 | 一种原子层沉积设备 |
CN116288271A (zh) * | 2023-03-01 | 2023-06-23 | 无锡邑文电子科技有限公司 | 一种水平传输装置和原子层沉积设备 |
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Denomination of invention: An ALD processing equipment and processing method Granted publication date: 20230908 Pledgee: Bank of Suzhou Limited by Share Ltd. Wuxi branch Pledgor: Wuxi Yiwen Microelectronics Technology Co.,Ltd. Registration number: Y2024980014979 |