WO2011141976A1 - Dispositif à semi-conducteur et son procédé de fabrication - Google Patents

Dispositif à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2011141976A1
WO2011141976A1 PCT/JP2010/007279 JP2010007279W WO2011141976A1 WO 2011141976 A1 WO2011141976 A1 WO 2011141976A1 JP 2010007279 W JP2010007279 W JP 2010007279W WO 2011141976 A1 WO2011141976 A1 WO 2011141976A1
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WIPO (PCT)
Prior art keywords
resin layer
semiconductor device
semiconductor substrate
electrode
semiconductor
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PCT/JP2010/007279
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English (en)
Japanese (ja)
Inventor
井上　大輔
恭子 藤井
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パナソニック株式会社
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Publication of WO2011141976A1 publication Critical patent/WO2011141976A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Definitions

  • the present invention relates to a semiconductor device having an optical element and a method for manufacturing the same.
  • FIG. 10 is a cross-sectional view showing the structure of a solid-state imaging device having a conventional wafer level CSP structure.
  • a conventional solid-state imaging device 100 ⁇ / b> A is provided around a semiconductor element 101, an imaging element 102 provided on the main surface of the semiconductor element 101, a microlens 103 provided on the imaging element 102, and the periphery of the imaging element 102.
  • a solid-state imaging device 100 including a peripheral circuit region 104A and an electrode wiring 104B electrically connected to the peripheral circuit region 104A is provided.
  • a light transmitting plate 106 made of, for example, optical glass is provided on the main surface of the semiconductor element 101 with an adhesive layer 105 interposed therebetween. Further, a through electrode 107 that penetrates the semiconductor element 101 in the thickness direction is provided inside the semiconductor element 101.
  • the back surface of the semiconductor element 101 covers the metal wiring 108 electrically connected to the through electrode 107, covers the back surface of the semiconductor element 101 and part of the metal wiring 108, and has an opening in the other part of the metal wiring 108.
  • an external electrode 110 made of, for example, solder and provided in an opening of the insulating layer 109 and electrically connected to the metal wiring 108.
  • the imaging element 102 and the external electrode 110 are electrically connected through the peripheral circuit region 104A, the electrode wiring 104B, the through electrode 107, and the metal wiring 108. Therefore, the received light signal can be taken out to a flip chip substrate or the like.
  • the light receiving element for optical pickup of Blu-Ray employs a structure in which a through hole is formed on the light receiving part and the light receiving part is completely opened (for example, see Patent Document 2).
  • outgas is generated from the adhesive layer due to the heat history of the subsequent manufacturing process and the heat generation of the drive circuit after mounting. Fill in the cavity.
  • outgas particles are deposited on the glass surface due to the optical tweezer effect of the light beam and image characteristics deteriorate.
  • An object of the present invention is to solve the above-described conventional problems, and to provide a semiconductor device that can prevent excessive damage of a dicing blade and has a high yield, and a manufacturing method thereof.
  • a semiconductor device of the present invention includes a semiconductor substrate, an optical element provided on the surface of the semiconductor substrate, and the semiconductor element so as to cover the optical element on the surface of the semiconductor substrate.
  • a first resin layer provided in a region smaller than a surface of the substrate; and a second resin layer provided on the surface of the semiconductor substrate so as to cover a side surface of the first resin layer.
  • the first resin layer is provided so as to cover the optical element, the optical element can be protected from external factors such as dust adhesion and humidity change. Therefore, a semiconductor device that operates with high accuracy can be realized. Further, since the light transmitting plate can be omitted as compared with the conventional configuration including the light transmitting plate, cost reduction can be expected. In addition, in the dicing process in which a plurality of semiconductor devices are singulated at the time of manufacture, compared to a configuration in which a light-transmitting plate is attached to a semiconductor substrate via an adhesive layer, individual pieces are obtained by dicing only the second resin layer and the semiconductor substrate. Chip chipping and excessive damage of the dicing blade can be prevented, and a semiconductor device with high yield can be provided.
  • the hardness of the second resin layer may be higher than the hardness of the first resin layer.
  • the first resin layer may be a silicone resin that is transparent to visible light.
  • the silicone resin is soft (generally shore strength D20 to 60)
  • the second resin layer is provided so as to cover the side surface of the first resin layer
  • the semiconductor device can be manufactured without the dicing blade dicing the first resin layer. Accordingly, chipping of individual chips and excessive damage of the dicing blade can be prevented, and a semiconductor device with high yield can be provided.
  • the semiconductor device preferably has an opening extending from the surface of the first resin layer to the upper surface of the second resin layer, and a part of the surface of the first resin layer is exposed. .
  • the first resin layer and the second resin layer can be arranged according to the required performance, it is possible to provide a semiconductor device having a high yield while preventing deterioration of optical characteristics.
  • the glass transition temperature Tg of the second resin layer may be 70 ° C. ⁇ Tg ⁇ 200 ° C.
  • the second resin layer may further cover a surface end portion of the first resin layer.
  • the second resin layer is formed thicker in the thickness direction of the semiconductor substrate than the first resin layer, and the region of the second resin layer formed thicker than the first resin layer is formed.
  • the angle formed by the inner wall of the second resin layer and the surface of the semiconductor substrate may be 80 ° or less.
  • the mold can be easily removed.
  • the angle formed by the inner wall of the second resin layer in the region of the second resin layer formed thicker than the first resin layer and the surface of the semiconductor substrate may be 45 ° or less. good.
  • the surface of the first resin layer may have a curvature.
  • the uncollimated light beam incident on the semiconductor device is efficiently condensed on the optical element. Further, the uncollimated light beam emitted from the optical element can be efficiently taken out of the semiconductor device. Therefore, the optical characteristics of the semiconductor device are improved.
  • the uncollimated light beam incident on the semiconductor device is condensed, so that the stray light reflected on the inner wall of the second resin layer in the region formed thicker than the first resin layer is incident on the optical element. Can be further prevented. Therefore, the optical characteristics of the semiconductor device are further improved.
  • the second resin layer may be opaque to visible light.
  • the end surface of the semiconductor substrate and the end surface of the second resin layer may be substantially flush with each other.
  • the semiconductor device can be manufactured by dicing that separates a wafer on which a plurality of semiconductor devices are formed.
  • an antireflection film that covers the inner wall of the second resin layer and prevents reflection of visible light may be provided.
  • the surface of the second resin layer may be flat.
  • an electrode region provided on the surface of the semiconductor substrate for transmitting a signal from the optical element or transmitting a signal to the optical element, and a through hole penetrating the semiconductor substrate in the thickness direction
  • a through electrode provided on the inner wall of the through hole and in contact with the back surface of the electrode region and extending to the back surface of the semiconductor substrate.
  • you may provide the filling layer with which the inside of the said through-hole was filled.
  • an insulating layer that covers the back surface of the semiconductor substrate except for a part on the through electrode may be provided.
  • an external electrode may be provided that is provided in a portion where the insulating layer on the through electrode is not covered and is electrically connected to the through electrode.
  • the semiconductor device of the present invention includes a semiconductor substrate, a plurality of optical elements provided on the surface of the semiconductor substrate, and a surface of the semiconductor substrate so as to cover the plurality of optical elements on the surface of the semiconductor substrate.
  • the method for manufacturing a semiconductor device of the present invention includes a step of preparing a semiconductor substrate having an optical element on a surface thereof, and a region smaller than the surface of the semiconductor substrate so as to cover the optical element on the surface of the semiconductor substrate.
  • a step (a) of forming a first resin layer, a step (b) of forming a second resin layer on the surface of the semiconductor substrate so as to cover the first resin layer, and the second resin layer And a step (c) of opening the side surface of the first resin layer so as not to be exposed.
  • the first resin layer is provided so as to cover the optical element, the optical element can be protected from external factors such as dust adhesion and humidity change. Therefore, a semiconductor device that operates with high accuracy can be realized. Further, since the light transmitting plate can be omitted as compared with the conventional configuration including the light transmitting plate, cost reduction can be expected.
  • the dicing process in which a plurality of semiconductor devices are singulated at the time of manufacture, compared to a configuration in which a light-transmitting plate is attached to a semiconductor substrate via an adhesive layer, individual pieces are obtained by dicing only the second resin layer and the semiconductor substrate. Chip manufacturing and excessive damage of the dicing blade can be prevented, and a method for manufacturing a semiconductor device with high yield can be provided.
  • the second resin layer may be opened so that an angle formed by the inner wall of the second resin layer and the surface of the semiconductor substrate is 80 ° or less.
  • the second resin layer may be opened so that an angle formed by the inner wall of the second resin layer and the surface of the semiconductor substrate is 45 ° or less.
  • a step of making the second resin layer opaque to visible light may be further included.
  • the semiconductor substrate has an electrode region on the surface for transmitting a signal from the optical element or transmitting a signal to the optical element
  • the method for manufacturing a semiconductor device further includes: Forming a through-hole penetrating in the vertical direction and forming a through-electrode on the inner wall of the through-hole formed so as to contact the back surface of the electrode region and extend to the back surface of the semiconductor substrate.
  • a filling layer may be further filled in the through hole.
  • a step (d) of forming an insulating layer covering the back surface of the semiconductor substrate, excluding a part on the through electrode may be included.
  • a step (e) of forming an external electrode electrically connected to the through electrode in a portion where the insulating layer on the through electrode is not covered may be included.
  • step (a), the step (b), the step (d), the step (c), and the step (e) may be performed in this order.
  • the second resin layer covers the surface of the semiconductor substrate, so that a plurality of semiconductor substrates can be accurately supported when the through electrode is formed.
  • the second resin layer can be accurately formed by forming the external terminal last.
  • step (a) the step (b) and the step (c) may be performed simultaneously.
  • the step (a) may be performed after the step (b) and the step (c).
  • the first resin layer having a curvature on the surface can be formed. Therefore, the uncollimated light beam incident on the semiconductor device is efficiently condensed on the optical element. Further, the uncollimated light beam emitted from the optical element can be efficiently taken out of the semiconductor device. Therefore, the optical characteristics of the semiconductor device are improved.
  • the first resin layer included in each semiconductor device of the wafer which is an assembly of a plurality of semiconductor devices, can be manufactured with an arbitrary thickness.
  • the glass transition temperature Tg of the second resin layer is 70 ° C. ⁇ Tg ⁇ 200 ° C., and the method for manufacturing the semiconductor device further includes dicing the second resin layer formed in the step (b). A step of dicing by contacting the blade may be included.
  • the present invention can provide a high yield semiconductor device and a method for manufacturing the same that can prevent excessive damage of the dicing blade.
  • FIG. 1A is a cross-sectional view showing an example of the structure of the semiconductor device according to the first embodiment.
  • FIG. 1B is a perspective view illustrating an example of a structure of a semiconductor device.
  • FIG. 1C is a perspective view illustrating another example of the structure of the semiconductor device.
  • FIG. 2A is a diagram for explaining an example of a method of manufacturing a semiconductor device.
  • FIG. 2B is a diagram for explaining an example of a manufacturing method subsequent to FIG. 2A.
  • FIG. 2C is a diagram for explaining an example of a manufacturing method subsequent to FIG. 2B.
  • FIG. 2D is a diagram for explaining an example of a manufacturing method continued from FIG. 2C.
  • FIG. 1A is a cross-sectional view showing an example of the structure of the semiconductor device according to the first embodiment.
  • FIG. 1B is a perspective view illustrating an example of a structure of a semiconductor device.
  • FIG. 1C is a perspective view illustrating another example of the structure of the
  • FIG. 3A is a diagram for describing an example of a method of manufacturing a semiconductor device according to a variation of the first embodiment.
  • FIG. 3B is a diagram for explaining an example of a manufacturing method subsequent to FIG. 3A.
  • FIG. 4A is a cross-sectional view showing an example of the structure of the semiconductor device according to the second embodiment.
  • FIG. 4B is a perspective view illustrating an example of the structure of the semiconductor device.
  • FIG. 4C is a perspective view illustrating another example of the structure of the semiconductor device.
  • FIG. 5A is a diagram for describing an example of a method of manufacturing a semiconductor device.
  • FIG. 5B is a diagram for explaining an example of the manufacturing method continued from FIG. 5A.
  • FIG. 5C is a diagram for explaining an example of a manufacturing method subsequent to FIG. 5B.
  • FIG. 6 is a cross-sectional view illustrating another example of the structure of the semiconductor device.
  • FIG. 7 is a cross-sectional view showing still another example of the structure of the semiconductor device.
  • FIG. 8 is a cross-sectional view illustrating an example of the structure of a semiconductor device having an antireflection film.
  • FIG. 9 is a cross-sectional view illustrating an example of the structure of a semiconductor device having a plurality of light receiving portions.
  • FIG. 10 is a cross-sectional view showing the structure of a conventional solid-state imaging device.
  • the semiconductor device according to this embodiment is provided in a region smaller than the surface of the semiconductor substrate so as to cover the optical element on the surface of the semiconductor substrate, the optical element provided on the surface of the semiconductor substrate, and the surface of the semiconductor substrate. And a second resin layer provided on the surface of the semiconductor substrate so as to cover a side surface of the first resin layer. Thereby, excessive damage of the dicing blade at the time of manufacture can be prevented, and a high yield semiconductor device can be realized.
  • FIG. 1A is a cross-sectional view showing an example of the structure of the semiconductor device according to the present embodiment
  • FIG. 1B is a perspective view showing an example of the structure of the semiconductor device according to the present embodiment.
  • a semiconductor device 10 includes a semiconductor element 11, a light receiving unit 12 provided on the surface thereof, and a periphery of the light receiving unit 12.
  • a signal from the light receiving unit 12 Is larger than the region of the light receiving unit 12 and covers the edge of the semiconductor element 11 so as to cover the light receiving unit 12 and the peripheral circuit region 13 for processing the electrode, part of the electrode region 14 formed of a metal thin film such as Al, Cu, etc.
  • the first resin layer 15 that has receded inward from, for example, 50 to 2000 ⁇ m, preferably about 1000 ⁇ m, and the second resin layer 16 provided so as to cover the side surface of the first resin layer 15 are provided.
  • the semiconductor device 10 has an opening 17 so as to spread from the upper surface of the first resin layer 15 to the second resin layer 16, and the surface of the first resin layer 15, the side surface of the opening of the second resin layer 16, and the upper surface thereof. Is exposed. Further, the surface resin edge portion and a part of the periphery of the first resin layer 15 are covered with the second resin layer 16.
  • the area of the opening 17 where the first resin layer 15 is exposed is, for example, about 50 to 400 ⁇ m larger than the area of the light receiving unit 12, and preferably about 100 ⁇ m larger.
  • the surface of the resin layer 15 is narrower by about 50 to 400 ⁇ m, more preferably about 100 ⁇ m.
  • the second resin layer 16 is harder than the first resin layer 15 and has a thickness of 400 to 500 ⁇ m, for example.
  • the semiconductor device 10 that can protect the light receiving unit 12 and operates with high accuracy can be realized.
  • the second resin layer 16 having the opening 17 is selectively provided on the light receiving unit 12, the light transmitting plate can be omitted as compared with the conventional configuration including the light transmitting plate, so that cost reduction can be expected.
  • the dicing process for separating the plurality of semiconductor devices 10 into pieces the dicing process using only the second resin layer 16 and the semiconductor element 11 is performed in comparison with a configuration in which a light transmitting plate is attached to the semiconductor element 11 via an adhesive layer. Chipping of individual chips and excessive damage of the dicing blade can be prevented, and the semiconductor device 10 with high yield can be provided.
  • the elastic modulus of the semiconductor element 11 is, for example, 130 to 190 GPa.
  • the semiconductor device 10 includes a through hole 18, a through electrode 19 formed on the inner wall of the through hole 18, a filling layer 20 filling the through hole 18, and a main surface below the semiconductor element 11 in the drawing ( The insulating layer 21 formed on the back surface and the external electrode 22 are provided.
  • FIG. 1A and FIG. 1B will be described in detail.
  • the semiconductor element 11 corresponds to a semiconductor substrate of the present invention, and a light receiving portion 12 and a peripheral circuit region 13 are provided on the main surface (front surface) above the drawing.
  • the light receiving unit 12 corresponds to the optical element of the present invention, and is, for example, a solid-state image sensor that generates a signal according to received light.
  • Peripheral circuit region 13 is, for example, an amplifier circuit that processes a signal from light receiving unit 12.
  • the electrode region 14 is formed on the surface of the semiconductor element 11 and transmits the signal processed in the peripheral circuit region 13 to the through electrode 19. Specifically, the back surface of the electrode region 14 is connected to the peripheral circuit region 13 and the through electrode 19.
  • the first resin layer 15 is provided on the surface of the semiconductor element 11 in a region larger than the region of the light receiving unit 12 and smaller than the semiconductor element 11 so as to cover the light receiving unit 12. At this time, the first resin layer is preferably formed to be larger by about 100 to 500 ⁇ m than the region of the surface of the light receiving unit 12, and particularly preferably about 200 ⁇ m.
  • the first resin layer 15 is a silicone resin that is transparent to visible light.
  • a thermosetting rubber resin agent that is transparent to visible light may be used.
  • the glass transition temperature Tg1 of the first resin layer 15 is Tg1 ⁇ 50 ° C.
  • the first resin layer 15 has no discoloration and contraction when receiving blue light having a high power density, and has a light transmittance of 85% or more (wavelength: 400 nm, thickness when the thickness is 2 mm). : 2 mm). If the thickness of the first resin layer 15 is reduced, the light transmittance is increased so that good light receiving characteristics can be obtained. From the viewpoint of the subsequent manufacturing process, the thickness of the first resin layer 15 is 10 to 10%. 400 ⁇ m is desirable, and particularly preferably about 30 ⁇ m.
  • the second resin layer 16 is formed so as to cover the side surface and the surface end of the first resin layer 15.
  • the glass transition temperature Tg2 of the second resin layer 16 is 70 ° C. ⁇ Tg2 ⁇ 200 ° C., and more preferably 150 ° C. ⁇ Tg2 ⁇ 180 ° C.
  • the dicing blade dices the second resin layer 16 in the dicing process by selectively providing the first resin layer 15 in a region larger than the surface of the light receiving unit 12 and smaller than the surface of the semiconductor element 11. Therefore, chipping of individual chips and excessive damage of the dicing blade can be prevented, and the semiconductor device 10 with a high yield can be provided.
  • the main component of the second resin layer 16 is an epoxy or polyimide thermosetting resin, and the main component may be different from that of the first resin layer 15.
  • the main component of the second resin layer 16 is the same as the main component of the first resin layer 15, and an inorganic substance (for example, silica or the like) is mixed into the main component, whereby the hardness of the second resin layer 16 ( It is desirable to adjust the elastic modulus.
  • an inorganic substance for example, silica or the like
  • Carbon may be mixed to blacken the second resin layer 16. Examples of carbon to be mixed include carbon black, channel black, furnace black, acetylene black, thermal black, and lamp black.
  • carbon black it is desirable that the average particle size is fine.
  • the average particle diameter is preferably, for example, 1 to 900 nm, particularly preferably about 1 to 100 nm.
  • the side surface of the semiconductor element 11 and the side surface of the second resin layer 16 are substantially flush with each other.
  • the end surface of the semiconductor element 11 and the end surface of the second resin layer 16 are substantially flush.
  • the side surface of the opening 17 provided in the second resin layer 16 is formed so that the angle ⁇ formed with respect to the surface of the semiconductor element 11 is 80 ° or less.
  • the angle ⁇ formed by the inner wall of the second resin layer 16 in the region formed thicker than the first resin layer 15 in the second resin layer 16 and the surface of the semiconductor element 11 is 80 ° or less. is there.
  • the side surface of the opening 17 is formed so that the angle ⁇ formed with respect to the surface of the semiconductor element 11 is 45 ° or less.
  • the side surface of the opening 17 of the second resin layer 16 is formed so that the angle ⁇ formed with respect to the surface of the semiconductor element 11 is 45 ° or less.
  • the opening 17 is provided so as not to contact the outer periphery of the semiconductor element 11 as shown in FIG. 1B. That is, the opening 17 is formed by cutting a part of the second resin layer 16 into, for example, a box shape from the surface of the semiconductor element 11 to the surface of the second resin layer 16.
  • the opening 17 is formed by cutting out a part of the second resin layer 16 from, for example, a truncated cone from the surface of the semiconductor element 11 to the surface of the second resin layer 16. Also good.
  • the through hole 18 penetrates the semiconductor element 11 in the thickness direction and is formed immediately below the electrode region 14.
  • the depth of the through hole 18 is, for example, 100 to 300 ⁇ m. That is, the thickness of the semiconductor element 11 is, for example, 100 to 300 ⁇ m.
  • the through electrode 19 is provided on the inner wall of the through hole 18, contacts the back surface of the electrode region 14, and extends to the back surface of the semiconductor element 11. In other words, the through electrode 19 is formed across a part of the back surface of the semiconductor element 11 and the inside of the through hole 18.
  • the through electrode 19 is made of a metal such as Ti or Cu, and is electrically connected to the electrode region 14.
  • the filling layer 20 is made of, for example, resin filled in the through hole 18.
  • the through electrode 19 may be configured to cover only the surface inside the through hole 18 as shown in FIG. 1A, or may be configured to completely fill the through hole 18 instead of the filling layer 20.
  • the insulating layer 21 is made of, for example, a resin that covers the back surface of the semiconductor element 11 except for a part on the through electrode 19. In other words, the insulating layer 21 covers the back surface of the semiconductor element 11 and has an opening in part of the through electrode 19.
  • the external electrode 22 is made of a lead-free solder material having a Sn—Ag—Cu composition, for example, which is provided in a portion not covered with the insulating layer 21 on the through electrode 19 and is electrically connected to the through electrode 19.
  • the external electrode 22 is provided in the opening of the insulating layer 21 and is electrically connected to the through electrode 19.
  • the electrode region 14 is electrically connected to the external electrode 22 via the through electrode 19, a signal corresponding to the light received by the light receiving unit 12 can be extracted to the outside of the semiconductor device 10. Become.
  • the semiconductor device 10 includes the semiconductor element 11, the light receiving unit 12 and the electrode region 14 provided on the surface of the semiconductor element 11, and the surface of the semiconductor element 11.
  • the first resin layer 15 provided in a region smaller than the surface of the semiconductor element 11 so as to cover the light receiving portion 12, and the side surface of the first resin layer 15 provided on the surface of the semiconductor element 11 are provided.
  • the second resin layer 16 is provided. The first resin layer 15 and the second resin layer 16 are formed in close contact with the semiconductor element 11.
  • the first resin layer 15 is provided so as to cover the light receiving part 12, the light receiving part 12 can be protected from external factors such as dust adhesion and humidity change, and the semiconductor device 10 operating with high accuracy can be obtained. realizable.
  • the light transmissive plate can be omitted, so that cost reduction can be expected.
  • the dicing process in which a plurality of semiconductor devices 10 are singulated at the time of manufacture compared to the configuration in which a light transmitting plate is attached to the semiconductor element 11 via an adhesive layer, only the second resin layer 16 and the semiconductor element 11 are included. By dicing, chipping of individual chips and excessive breakage of the dicing blade can be prevented, and the semiconductor device 10 with high yield can be provided.
  • the semiconductor device 10 does not contract and discolor the first resin layer 15 when receiving blue light with high power density. Warpage and deterioration of the light receiving characteristics can be prevented.
  • the semiconductor device 10 since the first resin layer 15 has a rubber structure at room temperature, if the entire surface of the semiconductor element 11 is covered, chipping of individual chips and breakage of the dicing blade occur in the dicing process.
  • the second resin layer 16 is provided so as to cover the side surface of the first resin layer 15, the semiconductor device 10 can be manufactured without the dicing blade dicing the first resin layer 15.
  • the semiconductor device 10 since the first resin layer 15 is selectively provided corresponding to the light receiving portion 12, the semiconductor device 10 can be manufactured without dicing the first resin layer 15. Therefore, chipping of individual chips and excessive damage of the dicing blade can be prevented, and the semiconductor device 10 with a high yield can be provided.
  • the semiconductor device 10 exemplified in the present embodiment is more reliable and can be manufactured at a lower cost than the conventional one, is excellent in image characteristics, and is excellent in miniaturization and low profile of the semiconductor device 10.
  • FIG. 2A to 2D are diagrams for explaining an example of a manufacturing method of the semiconductor device 10 according to the present embodiment.
  • FIG. 2D is a schematic diagram for explaining a process of dividing the semiconductor device 10 into pieces by dicing, and shows a plurality of semiconductor devices 10.
  • each process demonstrated below can be implemented using a well-known process, detailed description, such as process conditions, is abbreviate
  • the material and process shown below are one typical example, and do not limit the semiconductor device 10 and the manufacturing method thereof according to the present invention. Substitutions of other materials and processes of known suitability are also included in the present invention. The same applies to the semiconductor device and the manufacturing method thereof according to the second embodiment described later.
  • a wafer including a plurality of semiconductor elements 11 is prepared (semiconductor element preparation step).
  • the semiconductor element preparation step shown in FIG. 2A (a) corresponds to a step of preparing the semiconductor substrate of the present invention.
  • Each semiconductor element 11 is formed by a known method, and the surface of the semiconductor element 11 is provided with a light receiving portion 12, a peripheral circuit region 13, and an electrode region 14.
  • the electrode region 14 is made of a metal thin film such as Al or Cu.
  • the light receiving unit 12, the peripheral circuit region 13, and the electrode region 14 corresponding to each of the plurality of semiconductor devices 10 to be separated later are formed on one wafer.
  • the first resin layer 15 is formed so as to cover the light receiving portions 12 of the plurality of wafer-like semiconductor elements 11 (first resin layer forming step).
  • the first resin layer 15 is formed by a spin coating method, a dispensing method, or a printing filling method. It is preferable to use a spin coating method.
  • a photosensitive liquid resist 31 is applied to the surface of the semiconductor element 11 by using, for example, dry film bonding or spin coating, Using photolithography technology, the resist is patterned so that only the light receiving portion 12 is opened by exposure and development (FIG. 2A (b)).
  • the thickness of the resist 31 may be determined according to the thickness of the first resin layer 15 to be finally formed.
  • the thickness of the first resin layer 15 is generally 10 to 400 ⁇ m, preferably 30 ⁇ m.
  • the first resin layer 15 is applied to the surface of the semiconductor element 11 by spin coating.
  • the first resin layer 15 deposited on the resist is removed by spin coating centrifugal force.
  • the rotational speed and time of spin coating may be appropriately changed depending on the degree of filling of the first resin layer 15 into the opening of the resist 31 and the removability of the first resin layer 15 deposited on the resist 31.
  • the first resin layer 15 is thermally cured. At this time, the first resin layer 15 rises due to the surface tension with respect to the opening of the resist 31, or rises due to the effect of spin coating rotation speed and shrinkage of thermosetting. Therefore, by polishing the surface of the first resin layer 15, the surface of the first resin layer 15 and the surface of the resist 31 are smoothed, and the first resin layer 15 having a flat upper surface can be obtained. Thereby, the incident light is incident on the light receiving unit 12 without being irregularly reflected by the first resin layer 15, so that the semiconductor device 10 can be driven without causing deterioration of the light receiving characteristics of the semiconductor device 10.
  • the steps shown in FIGS. 2A (b) to 2 (d) correspond to the step (a) for forming the first resin layer of the present invention.
  • a second resin layer is formed on the surface of the semiconductor element 11 so as to cover the first resin layer 15 (second resin layer forming step).
  • the second resin layer 16 is formed by a transfer mold method using a mold. More specifically, as shown in FIG. 2A (e), the second resin layer material R2 is injected from the lateral direction of the wafer using a flat mold D1. Thereafter, after the second resin layer material R2 is thermally cured, the mold D1 is removed as shown in FIG. 2B (f). That is, the process shown in FIGS. 2A (e) and 2B (f) is a second resin layer forming process by a transfer molding method. In other words, the step shown in FIGS. 2A (e) and 2B (f) corresponds to the step (b) of forming the second resin layer of the present invention.
  • carbon may be mixed into the main component of the second resin layer. Examples of carbon to be mixed include carbon black, channel black, furnace black, acetylene black, thermal black, and lamp black. For carbon black, it is desirable that the average particle size is fine. In addition, the average particle diameter of the mixed carbon is, for example, 1 to 900 nm, particularly preferably about 1 to 100 nm.
  • This blackening step corresponds to a step of making the second resin layer of the present invention opaque to visible light.
  • a desired value generally about 100 to 300 ⁇ m
  • mirror surface processing such as CMP (chemical mechanical polishing) (back grind process).
  • a through-hole 18 that penetrates the semiconductor element 11 in the thickness direction is formed so as to reach the back surface of the electrode region 14 from the back surface of the semiconductor element 11.
  • dry etching, wet etching, or the like may be performed using a resist, SiO2, a metal film, or the like as a mask.
  • an insulating film such as SiO 2 is formed on the entire back surface of the semiconductor element 11 and inside the semiconductor element 11 and the through hole 18 using a CVD (Chemical Vapor Deposition) method, a printing filling method of an insulating paste, or the like.
  • CVD Chemical Vapor Deposition
  • the insulating film formed in the electrode region 14 is removed again by using dry etching, wet etching, or the like, the insulating film is provided on the inner wall of the through hole 18, is in contact with the back surface of the electrode region 14, and A through electrode 19 extending to the back surface is formed.
  • the through electrode 19 is formed by the following process.
  • a metal thin film is formed on the entire back surface of the semiconductor element 11 using a sputtering method or the like.
  • Ti, TiW, Cr, Cu or the like is mainly used for the metal thin film.
  • the resist is patterned in accordance with the through electrode 19 by exposure and development using a photolithography technique.
  • the thickness of the resist may be determined according to the thickness of the through electrode 19 to be finally formed. Generally, it is about 5 to 30 ⁇ m.
  • the penetration electrode 19 is formed with metals, such as Cu, using an electroplating method.
  • a filling layer 20 is formed in the through hole 18 in which the through electrode 19 is formed.
  • a resin is used as a material to be filled as the filling layer 20.
  • the filling layer 20 may be filled by spin coating with a liquid photo-curing or thermosetting resin, or the filling layer 20 may be filled with a resin paste by a printing filling method, dipping, or the like.
  • a metal may be used as a material with which the filling layer 20 is filled.
  • the metal plating may be filled using an electrolytic plating method, or the metal paste may be filled mainly using a printing filling method, dipping, or the like.
  • the filling layer 20 is filled by the electrolytic plating method, it is preferable that the filling layer 20 is simultaneously formed when the through electrode 19 is formed. At this time, the filling layer 20 is filled so that the through hole 18 is completely embedded.
  • the filling layer 20 and the through electrode 19 are formed separately, for example, after the through electrode 19 is formed, a mask having an opening is formed in the through hole 18 and the through hole 18 is formed by electrolytic plating.
  • the filling layer 20 is formed.
  • an insulating layer 21 is formed on the back surface of the semiconductor element 11 so as to cover the through electrode 19.
  • the insulating layer 21 is formed by using a photosensitive resin and spin coating or attaching a dry film.
  • an opening that exposes part of the through electrode 19 is formed by selectively removing the insulating layer 21 using a photolithography technique.
  • the insulating layer 21 covering the back surface of the semiconductor element 11 is formed by excluding a part on the through electrode 19 (insulating layer forming step). In other words, this insulating layer forming step corresponds to step (d) of the present invention.
  • the second resin layer 16 is formed by forming an opening 17 in the second resin layer material R2 (opening step). Form.
  • the second resin layer 16 is formed by opening the second resin layer material R2 so that the side surface of the first resin layer 15 is not exposed. That is, the opening process shown in FIGS. 2B (i), 2C (j), and 2C (k) corresponds to the process (c) of the present invention. Hereinafter, this opening process will be described.
  • a photosensitive liquid resist 32 is applied to the surface of the second resin layer material R2 by using, for example, dry film bonding or spin coating.
  • the resist 32 is patterned by photolithography so that the second resin layer material R2 is opened in a region corresponding to the light receiving portion 12 by exposure and development.
  • the second resin layer material R2 provided in the opening 17 using the resist pattern as a protective film is removed using a dedicated etching solution.
  • the side surface of the opening 17 is formed such that the angle ⁇ formed with respect to the surface of the semiconductor element 11 is 80 ° or less.
  • the first resin layer 15 and the second resin layer 16 are preferably made of different materials. It is desirable that the angle ⁇ formed by the side surface of the opening 17 and the surface of the semiconductor element 11 is 45 ° or less.
  • the resist 32 is removed by a dedicated remover.
  • the electrode region 14 is formed on the opening from which a part of the through electrode 19 is exposed by a solder ball mounting method using a flux, a solder paste printing method, or an electroplating method.
  • the external electrode 22 to be electrically connected is formed (external electrode forming step).
  • the external electrode 22 electrically connected to the through electrode 19 is formed in a portion not covered with the insulating layer 21 on the through electrode 19.
  • a lead-free solder material having a Sn—Ag—Cu composition is used as the material of the external electrode 22.
  • the external electrode forming step shown in FIG. 2C (l) corresponds to the step (e) of the present invention.
  • a wafer having a plurality of semiconductor devices 10 as shown in FIG. 1A is formed.
  • a dicing blade 40 such as a dicing saw is used to cut a wafer including a plurality of semiconductor elements 11 and divide the plurality of semiconductor devices 10 into individual pieces (dicing step).
  • dicing is performed by bringing the dicing blade 40 of the present invention into contact with the second resin layer 16.
  • the second resin layer 16, the semiconductor element 11, and the insulating layer 21 are cut by the dicing blade 40 and separated into a plurality of semiconductor devices 10.
  • the first resin layer 15 has a rubber structure at room temperature
  • the dicing blade 40 cuts the first resin layer 15, chipping of individual chips (each semiconductor device 10) and breakage of the dicing blade 40 are performed. Occurs.
  • the dicing blade 40 does not cut the first resin layer, but cuts the second resin layer 16 provided so as to cover the side surface of the first resin layer 15. Since the glass transition temperature Tg2 of the second resin layer 16 is 70 ° C. ⁇ Tg2 ⁇ 200 ° C., chipping of individual chips and breakage of the dicing blade 40 do not occur in the dicing process.
  • the manufacturing method of the semiconductor device 10 according to the present embodiment can prevent chipping of individual chips and excessive damage of the dicing blade 40 and can manufacture the semiconductor device 10 with high yield.
  • the opening 17 is formed after the filling layer 20 is formed.
  • the semiconductor element 11 can be sufficiently supported by the second resin layer 16, and the semiconductor device 10 can be manufactured with high accuracy.
  • the through hole 18, the through electrode 19, the filling layer 20, the insulating layer 21, and the external electrode 22 can be formed in a state where the semiconductor element 11 is sufficiently supported by the second resin layer material R ⁇ b> 2 having a flat surface after curing. . Therefore, the semiconductor device 10 can be manufactured with high accuracy.
  • Modification of Embodiment 1 This modification is the same in that the second resin layer 16 is formed by transfer molding, but the mold used to form the second resin layer 16 is different from that of the first embodiment.
  • a method of manufacturing a semiconductor device according to this modification will be described with reference to FIGS. 3A and 3B. Note that the semiconductor device manufactured by the manufacturing method of the present modification is the semiconductor device 10 according to Embodiment 1 shown in FIGS. 1A and 1B.
  • 3A and 3B are diagrams for explaining an example of a manufacturing method of the semiconductor device 10 according to the present modification.
  • the first resin layer 15 is formed on the semiconductor element 11. Since this process is the same as the process described with reference to FIGS. 2A (a) to 2A (d), a detailed description thereof will be omitted.
  • the second resin layer 16 is formed on the surface of the semiconductor element 11 so as to cover the first resin layer 15 (second resin layer forming step). Opening is performed so that the side surface of the substrate is not exposed (opening step).
  • the second resin layer 16 is formed by a transfer molding method using a downwardly convex mold D2 as shown in FIG. 3A (e).
  • the shape of the mold D2 used here has a convex shape corresponding to the opening 17 as shown in FIG. 3A (e).
  • the shape of the convex portion may be appropriately determined depending on the size and position of the light receiving portion 12 of the semiconductor element 11.
  • the angle ⁇ formed by the convex side surface of the mold D2 with the surface of the semiconductor element 11 is 80 °. The following is desirable. More preferably, the formed angle ⁇ should be 45 ° or less.
  • the second resin layer material R2 is formed so as to cover the first resin layer 15, and at the same time, the second resin layer material R2 is opened so that the side surface of the first resin layer 15 is not exposed.
  • the second resin layer material R2 is injected from the lateral direction of the wafer using a downwardly convex mold D2. Thereafter, after the second resin layer material R2 is thermally cured, the second resin layer 16 is formed by removing the mold D2 as shown in FIG. 3B (f).
  • the manufacturing method of the semiconductor device 10 according to the present modified example uses the downwardly projecting mold D2 as compared with the manufacturing method of the semiconductor device 10 of the first embodiment, so that the second resin layer forming step and the opening are performed. The difference is that the process is performed simultaneously.
  • the manufacturing method of the semiconductor device 10 according to the present modification can reduce the number of work steps as compared with the manufacturing method of the semiconductor device 10 according to the first embodiment.
  • FIGS. 3B (g) to (i) the through hole 18, the through electrode 19, the filling layer 20, the insulating layer 21, and the external electrode 22 are formed.
  • the process for forming these is the same as the process described in FIG. 2B (g), FIG. 2B (h), and FIG. 2C (l), and thus detailed description thereof is omitted.
  • a wafer including a plurality of semiconductor devices 10 is cut using a dicing blade 40 such as a dicing saw to separate the plurality of semiconductor devices 10 into individual pieces (dicing step). Since the dicing process is the same as that of the first embodiment, detailed description thereof is omitted.
  • the semiconductor device 10 is manufactured through the above steps.
  • the second resin layer 16 is formed on the surface of the semiconductor element 11 so as to cover the first resin layer 15 by using the downwardly projecting mold D2. Simultaneously with the second resin layer forming step, the second resin layer 16 is opened so that the side surfaces of the first resin layer 15 are not exposed (opening step). Thereby, compared with the manufacturing method of Embodiment 1, work man-hours can be reduced.
  • a first resin layer 15 is formed between the convex portion of the mold D2 and the light receiving portion 12. Therefore, since the light receiving part 12 is protected by the first resin layer 15, the light receiving characteristic can be maintained without being damaged by the mold D2. That is, in the manufacturing method of this modification, the second resin layer forming step and the opening step are simultaneously performed while protecting the light receiving unit 12 with the first resin layer 15.
  • the semiconductor device according to the present embodiment is substantially the same as the semiconductor device according to the first embodiment, except that the surface of the first resin layer has a curvature.
  • the uncollimated light beam incident on the semiconductor device is efficiently condensed on the light receiving unit 12. Therefore, the light receiving characteristics of the semiconductor device are improved.
  • the incident uncollimated light flux collects, so that the stray light reflected by the inner wall of the second resin layer 16 in the region formed thicker than the first resin layer is incident on the light receiving unit 12. This can be further prevented. Therefore, the light receiving characteristics of the semiconductor device are further improved.
  • the semiconductor device according to the present embodiment will be described focusing on differences from the semiconductor device according to the first embodiment.
  • FIG. 4A is a cross-sectional view illustrating an example of the structure of the semiconductor device according to the present embodiment
  • FIG. 4B is a perspective view illustrating an example of the structure of the semiconductor device according to the present embodiment.
  • the semiconductor device 30 according to the present embodiment shown in FIG. 4A includes a first resin layer 25 instead of the first resin layer 15 as compared with the semiconductor device 10 according to the first embodiment.
  • the first resin layer 25 has a curvature on the surface.
  • the radius of curvature of the first resin layer 25 may be appropriately selected depending on the spread angle of incident light, the beam diameter, and the size and position of the region of the light receiving unit 12 so that the incident light is efficiently collected on the light receiving unit 12. Good.
  • the first resin layer 25 having a curvature on the surface can efficiently collect incident light on the light receiving unit 12, an uncollimated light beam incident on the semiconductor device 30 is incident on the light receiving unit 12. Condensed efficiently. Therefore, the light receiving characteristics of the semiconductor device 30 are improved.
  • stray light reflected from the side surface of the opening 17 of the second resin layer 16 can be prevented from entering the light receiving unit 12 and deterioration of the light receiving characteristics of the semiconductor device 30 can be reduced.
  • stray light reflected on the inner wall of the second resin layer 16 in the region formed thicker than the first resin layer 25 is condensed on the incident uncollimated light flux to the light receiving unit 12. Incident can be further prevented. Therefore, the light receiving characteristics of the semiconductor device 30 are further improved.
  • the opening 17 is formed from the surface of the semiconductor element 11 to the surface of the second resin layer 16 so that a part of the second resin layer 16 is hollowed out into, for example, a cylindrical shape. Also good.
  • the structure in which the second resin layer 16 is opened in a cylindrical shape as shown in FIG. 4C has a curvature of the surface of the first resin layer 25 as compared with the structure in which the second resin layer 16 is opened in a box shape as shown in FIG. 4B. The curvature of the light incident on the first resin layer 25 can be accurately collected on the light receiving unit 12.
  • FIGS. 5A to 5C are diagrams for explaining a method of manufacturing the semiconductor device 30 according to the present embodiment.
  • FIG. 5C is a schematic diagram for explaining a process of dividing the semiconductor device 30 into pieces by dicing, and shows a plurality of semiconductor devices 10.
  • semiconductor element preparation step a wafer including a plurality of semiconductor elements 11 is prepared (semiconductor element preparation step). Since this step is the same as the semiconductor element preparation step shown in FIG. 2A (a), detailed description thereof is omitted.
  • the thickness of the resist 31 may be determined according to the thickness of the side surface of the first resin layer 25 to be finally formed.
  • the thickness of the side surface of the first resin layer 25 is generally 10 to 400 ⁇ m, preferably 30 ⁇ m.
  • the second resin layer 16 is formed on the surface of the semiconductor element 11 so as to cover the first resin layer 25 (second resin layer forming step). Opening is performed so that the side surface of the substrate is not exposed (opening step). In other words, the second resin layer 16 that covers the resist 31 is formed, and at the same time, the second resin layer 16 is opened so that the side surfaces of the resist 31 are not exposed.
  • the second resin layer 16 is formed by the transfer molding method using the downward convex mold D2 as described in the modification of the first embodiment.
  • the second resin layer material R2 is injected so as to cover the resist 31, and at the same time, the second resin layer material R2 is opened so that the side surface of the resist 31 is not exposed.
  • the second resin layer material R2 is injected from the lateral direction of the wafer using a downwardly convex mold D2. Thereafter, the second resin layer material R2 is thermally cured, and then the second resin layer 16 is formed by removing the mold D2 as shown in FIG. 5A (d), and the resist 31 is removed with a dedicated remover.
  • the first resin layer 25 is formed on the surface of the semiconductor element 11 in a region smaller than the surface of the semiconductor element 11 so as to cover the light receiving portion 12 (first resin layer forming step).
  • a first resin layer 25 having a curvature on the surface is formed by a dispensing method. That is, it fills by dripping 1st resin layer material R1 with respect to the opening part by which the 2nd resin layer 16 was opened.
  • the curvature radius of the upper surface of the first resin layer 25 is determined by the dropping amount of the first resin layer material R1 and the height and area of the opening where the second resin layer 16 is opened. In other words, the curvature radius of the upper surface of the first resin layer 25 is determined by the dropping amount of the first resin layer material R1 and the volume of the opening of the second resin layer 16.
  • the first resin layer material R1 having a curvature on the surface is formed by, for example, thermosetting the first resin layer material R1.
  • FIGS. 5B (f) to (h) a through hole 18, a through electrode 19, a filling layer 20, an insulating layer 21, and an external electrode 22 are formed.
  • the process for forming these is the same as the process described in FIG. 2B (g), FIG. 2B (h), and FIG. 2C (l), and thus detailed description thereof is omitted.
  • a wafer having a plurality of semiconductor devices 30 is formed.
  • a dicing blade 40 such as a dicing saw is used to cut a wafer having a plurality of semiconductor devices 30 and separate the plurality of semiconductor devices 30 (dicing step). . Note that the dicing process is the same as the process described in FIG.
  • the second resin layer forming step and the opening step are simultaneously performed on the surface of the semiconductor element 11, and then the first resin layer forming step is performed. .
  • the first resin layer 25 having a curvature on the surface can be formed. Therefore, the uncollimated light beam incident on the semiconductor device 30 is efficiently condensed on the light receiving unit 12. Therefore, the light receiving characteristics of the semiconductor device 30 are improved.
  • stray light reflected on the inner wall of the second resin layer 16 in a region formed thicker than the first resin layer 25 is collected by collecting the uncollimated light beam incident on the first resin layer 25. Incidence to the light receiving unit 12 can be further prevented. Therefore, the light receiving characteristics of the semiconductor device 30 are further improved. In other words, since the stray light reflected from the side surface of the opening 17 can be prevented from entering the light receiving portion 12, the light receiving characteristics of the semiconductor device 30 are improved.
  • first resin layer 25 included in each semiconductor device 30 of a wafer that is an aggregate of a plurality of semiconductor devices 30 can be manufactured with an arbitrary thickness.
  • the manufacturing method of the semiconductor device 30 according to the present embodiment is the same as the manufacturing method of the semiconductor device 10 according to the first embodiment, and the dicing blade 40 does not cut the first resin layer 25 in the dicing process. Then, the second resin layer 16 provided so as to cover the side surface of the first resin layer 25 is cut.
  • the manufacturing method of the semiconductor device 30 according to the present embodiment can prevent chipping of individual chips and excessive damage of the dicing blade 40, as in the manufacturing method of the semiconductor device 10 according to the first embodiment.
  • a semiconductor device 30 with a high yield can be manufactured.
  • the first resin layer 25 is formed after the second resin layer 16 is formed.
  • the method for forming the first resin layer 25 having a curvature on the surface is not limited to this, and a resist is used.
  • the second resin layer 16 may be formed after the first resin layer 25 is formed.
  • the first resin layer 25 is formed by filling the first resin layer material R ⁇ b> 1 into the opening portion of the resist using a dispensing method. May be.
  • the mold D2 as shown in FIG. 5A (c) when the mold D2 as shown in FIG. 5A (c) is used, the curvature of the first resin layer 25 is compressively deformed by the convex portion of the mold D2. Therefore, it is preferable to use a flat mold D1 as shown in FIG. 2A (e).
  • the second resin layer 16 covers the upper surface end of the first resin layer 15, but the second resin layer 16 is a side surface of the first resin layer 15 as shown in FIG. 6.
  • a configuration in which the upper end portion is not covered may be employed.
  • the second resin layer 16 is formed thicker than the first resin layer. However, as shown in FIG. 7, the thickness of the second resin layer 16 and the thickness of the first resin layer 15 are formed. May be the same. In other words, the upper surface of the first resin layer 15 and the upper surface of the second resin layer 16 may be substantially flush.
  • the semiconductor device may further include an antireflection film that covers the inner wall of the second resin layer 16 and prevents reflection of visible light.
  • FIG. 8 is a cross-sectional view showing an example of the structure of a semiconductor device having an antireflection film.
  • the semiconductor device shown in FIG. 1A further includes an antireflection film 35 that covers the inner wall of the second resin layer 16 and prevents reflection of visible light.
  • the antireflection film 35 covering the inner wall of the second resin layer 16 can prevent stray light reflected on the inner wall of the second resin layer 16 and reduce deterioration of the light receiving characteristics of the semiconductor device.
  • the antireflection film 35 may be formed using, for example, a sputtering method or a sheet attaching process.
  • the semiconductor device includes a semiconductor element 11, a plurality of light receiving parts 12 provided on the surface of the semiconductor element 11, and a plurality of light receiving parts 12 covered on the surface of the semiconductor element 11.
  • a first resin layer 15 provided in a region smaller than the semiconductor element 11, and a second resin layer 16 provided on the surface of the semiconductor element 11 so as to cover the side surface of the first resin layer 15. Also good.
  • the first resin layer 15 of the semiconductor device 10 is formed by etching.
  • the first resin layer 15 may be formed by dispensing. Good.
  • the resist 31 is first patterned similarly to the spin coating method. And what is necessary is just to fill 1st resin layer material R1 with respect to the opening part of the resist 31 using the dispensing method. At this time, the filling amount of the first resin layer material R ⁇ b> 1 may be appropriately determined by the volume of the opening of the resist 31. Since the first resin layer material R1 is supported by the resist 31, the shape of the first resin layer material R1 before thermosetting can be accurately formed. That is, the shape of the first resin layer 15 can be formed with high accuracy.
  • the subsequent construction method is the same as the spin coating method.
  • the first resin layer material R1 may be formed on the light receiving portion 12 by using a dispensing method, but the shape of the first resin layer material R1 before curing is accurately maintained. It is difficult. That is, it is difficult to form the first resin layer 15 with high accuracy.
  • the glass transition temperature Tg2 of the second resin layer 16 is 70 ° C. ⁇ Tg2 ⁇ 200 ° C.
  • the glass transition temperature Tg2 of the second resin layer 16 is not limited to this. What is necessary is just to be higher than the glass transition temperature Tg1 of 1 resin layer 15. In other words, the hardness of the second resin layer 16 only needs to be higher than the hardness of the first resin layer 15.
  • the semiconductor device 10 includes the light receiving unit 12, but may include a light emitting unit that emits light instead of the light receiving unit 12.
  • the through-hole 18 and the through-electrode 19 were formed after the 1st resin layer was formed, they may be formed before the 1st resin layer is formed, It may be formed before the two resin layers are formed.
  • the semiconductor device of the present invention is particularly suitable for various semiconductor devices and various modules such as an optical pickup device and a solid-state imaging device, as well as a photodiode and a laser module.

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Abstract

La présente invention concerne un dispositif à semi-conducteur à haut rendement qui peut empêcher une lame de découpage en dés de se casser de façon excessive. Le dispositif à semi-conducteur (10) comprend : un élément semi-conducteur (11) ; une section de réception de lumière (12), qui se situe sur la surface avant de l'élément semi-conducteur (11) ; une première couche de résine (15), qui se trouve dans une région plus petite que la surface avant de l'élément semi-conducteur (11), ladite région se situant sur la surface avant de l'élément semi-conducteur (11), de telle sorte que la section de réception de lumière (12) soit recouverte par la première couche de résine ; et une seconde couche de résine (16), qui se trouve sur la surface avant de l'élément semi-conducteur (11) de telle sorte que la surface latérale de la première couche de résine (15) soit recouverte par la seconde couche de résine.
PCT/JP2010/007279 2010-05-12 2010-12-15 Dispositif à semi-conducteur et son procédé de fabrication WO2011141976A1 (fr)

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CN109244224A (zh) * 2017-07-11 2019-01-18 Lg 伊诺特有限公司 发光器件封装
CN109244224B (zh) * 2017-07-11 2023-02-21 苏州立琻半导体有限公司 发光器件封装

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