WO2011129172A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2011129172A1
WO2011129172A1 PCT/JP2011/056078 JP2011056078W WO2011129172A1 WO 2011129172 A1 WO2011129172 A1 WO 2011129172A1 JP 2011056078 W JP2011056078 W JP 2011056078W WO 2011129172 A1 WO2011129172 A1 WO 2011129172A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
pair
light
emitting element
emitting device
Prior art date
Application number
PCT/JP2011/056078
Other languages
English (en)
Japanese (ja)
Inventor
形部　浩介
草野　民男
裕樹 森
利弥 田中
常幸 平林
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Publication of WO2011129172A1 publication Critical patent/WO2011129172A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Definitions

  • the present invention relates to a light emitting device including a light emitting element.
  • An object of the present invention is to improve the directivity of light extracted from a light-emitting device.
  • a light emitting device is provided across a substrate, a pair of electrode layers provided on the substrate with a space between each other, and both electrode layers of the pair of electrode layers, Each of the pair of electrode layers is provided so as to overlap with the pair of insulating sheets and the pair of insulating sheets provided to leave a part of each of the pair of electrode layers and to be spaced apart from each other.
  • a light emitting element electrically connected to a part of the light emitting element. Further, in the light emitting device, the upper surfaces of the pair of insulating sheets are in contact with the lower surfaces of the light emitting elements.
  • FIG. 5 is a cross-sectional view of the light emitting device along X-X ′ shown in FIG. 4.
  • the light emitting device 1 is provided across a substrate 2, a pair of electrode layers 3 provided on the substrate 2 with a space therebetween, and a pair of electrode layers 3.
  • a pair of insulating sheets 4 provided to be spaced apart from each other so as to cover a part 3A of both electrode layers 3 of the electrode layer 3, and a pair of insulating sheets 4 so as to overlap and be exposed.
  • a light emitting element 5 electrically connected to a part 3A of both electrode layers 3.
  • the light emitting element 5 is, for example, a light emitting diode, and is emitted as excitation light toward the outside by recombination of electrons and holes in a pn junction using a semiconductor.
  • the substrate 2 may be composed of a sintered body such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide, a ceramic material such as mullite or glass ceramic, or a composite material obtained by mixing a plurality of these materials. it can.
  • the substrate 2 can be made of a polymer resin in which metal oxide fine particles are dispersed.
  • the thermal conductivity of the substrate 2 is set to, for example, 1 [W / m ⁇ K] or more and 250 [W / m ⁇ K] or less.
  • the substrate 2 may be bonded with a reflecting plate made of a porous material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide so as to surround the light emitting element 5 on the upper surface thereof. Since the reflecting plate is made of a porous material, many fine holes are formed on the surface of the reflecting plate.
  • a reflecting plate made of a porous material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide so as to surround the light emitting element 5 on the upper surface thereof. Since the reflecting plate is made of a porous material, many fine holes are formed on the surface of the reflecting plate.
  • a pair of electrode layers 3 are formed on the substrate 2.
  • the electrode layer 3 is formed extending from one end side to the other end side of the upper surface of the substrate 2.
  • the pair of electrode layers 3 are spaced apart from each other and are electrically independent.
  • the electrode layer 3 is made of a conductive material such as tungsten, molybdenum, manganese, or copper.
  • the thermal conductivity of the electrode layer 3 is set to, for example, 100 [W / m ⁇ K] or more and 400 [W / m ⁇ K] or less.
  • the electrode layer 3 is provided symmetrically with respect to the center of the substrate 2 in plan view.
  • the heat concentrates on a specific location with respect to the substrate 2. Can be suppressed.
  • the stress concentration caused by the heat concentration on the substrate 2 can be alleviated, and the electrode layer 3 can be prevented from peeling off the substrate 2.
  • the electrode layer 3 is provided symmetrically with respect to the center of the substrate 2 in a plan view when the deviation width in the planar direction of both the electrode layers 3 with respect to the center of the substrate 2 in a plan view is 5 mm or less.
  • the thickness of the electrode layer 3 is set to, for example, 0.1 ⁇ m or more and 100 ⁇ m or less. And the difference of the thickness of both the electrode layers 3 is set to 50 micrometers or less, for example. By reducing the difference in thickness between the two electrode layers 3, the height position of the insulating sheet 4 formed on the two electrode layers 3 can be adjusted. Furthermore, the inclination at the time of mounting of the light emitting element 5 formed on the insulating sheet 4 can be adjusted.
  • a pair of insulating sheets 4 that are provided over both the electrode layers 3 and expose a part 3 ⁇ / b> A of both the electrode layers 3 are provided.
  • the pair of insulating sheets 4 are arranged symmetrically with respect to the exposed part 3A of both electrode layers 3.
  • the insulating sheets 4 are each formed in a rectangular shape in plan view. Note that the pair of insulating sheets 4 are arranged symmetrically with respect to the exposed part 3A when the two sheets 4 are arranged in a plan view of the two sheets 4 with respect to the center of the substrate 2 in plan view.
  • the deviation width is 5 mm or less.
  • the heat generated from the light emitting element 5 is transmitted to the electrode layer 3, and further the heat transmitted to the electrode layer 3 is transmitted to the insulating sheet 4.
  • the heat can be easily transmitted to the entire upper surface of the substrate 2 or the atmosphere via the heat transmitted to the insulating sheet 4.
  • the heat transmitted to the insulating sheet 4 can be transmitted to the entire substrate 2 and the temperature of the light emitting element 5 can be prevented from rising.
  • the insulating sheet 4 is formed from the upper surface of the electrode layer 3 to the upper surface of the substrate 2 through the side surface of the electrode layer 3.
  • the insulating sheet 4 has a function of suppressing peeling of the electrode layer 3.
  • the insulating sheet 4 is made of a material such as a ceramic material made of aluminum oxide or the like, a glass made of a light transmissive inorganic material, an epoxy resin made of a light transmissive organic material, an acrylic resin, or a silicon resin.
  • the thermal conductivity of the insulating sheet 4 is set to, for example, 1 [W / m ⁇ K] or more and 250 [W / m ⁇ K] or less.
  • the pair of insulating sheets 4 are set to the same size.
  • being set to the same size means a state in which the deviation width in the planar direction of both sheets 4 is 5 mm or less when viewed in plan, for example, the deviation width of both sheets 4 by overlapping both sheets 4. Can be measured.
  • both sheets are in contact with the light emitting element 5.
  • a part of the insulating sheet 4 is interposed between the electrode layer 3 and the light emitting element 5.
  • the insulating sheet 4 is interposed between the electrode layer 3 and the light emitting element 5, and the inclination of the light emitting element 5 can be adjusted by adjusting the thickness of the insulating sheet 4. As a result, the luminance of the light emitting device due to the inclination of the light emitting element 5 is controlled to a desired luminance.
  • the height position of the upper surface in contact with the light emitting element 5 is set to the same height position in both sheets.
  • the height position where the height position of the upper surface of a pair of insulating sheets 4 is the same means that the error of the height position of both sheets is 10 micrometers or less, for example.
  • the height position of the portion where one upper surface of the pair of insulating sheets 4 and the lower surface of the light emitting element 5 are in contact with each other becomes a pair of insulating sheets.
  • 4 can be set to have the same height position as the height position where the other upper surface of 4 contacts the lower surface of the light emitting element 5.
  • the light emitting element 5 when the error in the height position of the pair of insulating sheets 4 is large, the light emitting element 5 is mounted with a large inclination with respect to the upper surface of the insulating sheet 4.
  • the light emitting element 5 has a large intensity of light emitted in a direction perpendicular to the upper surface of the light emitting element 5 due to the characteristics of the optical semiconductor layer. On the other hand, it proceeds vertically. As a result, the light extracted from the light emitting device 1 cannot be extracted in a desired direction, and the directivity of the light extracted from the light emitting device 1 may be reduced.
  • the inclination of the light emitting element 5 with respect to the upper surface of the insulating sheet 4 can be suppressed, and the light emitted from the light emitting element 5 can be reduced. Can emit a lot of light in the vertical direction. As a result, the directivity of light extracted from the light emitting device 1 can be improved, and for example, in the residential lighting field, the light emitting device 1 that can illuminate a desired place brightly can be provided.
  • the insulating sheet 4 is preferably translucent to the light from the light emitting element 5 and the light from the wavelength conversion unit 6. Thereby, the light from the light emitting element 5 and the wavelength conversion unit 6 is reflected by the reflection characteristics of the upper surface of the substrate 2 without being absorbed by the insulating sheet 4. Is incident on the wavelength converter 6 and is converted by the wavelength converter 6. As a result, the light emitting device 1 can maintain a desired light output.
  • the electrode layer 3 may be formed so that the reflectance is different between the portion where the insulating sheet 4 is provided and the part 3A of both electrode layers 3 exposed without the insulating sheet 4 being provided.
  • the electrode layer 3 is formed by electrically connecting and fixing the light emitting element 5 to the substrate 2, for example, a portion where the conductive material E such as solder or brazing material is disposed and a portion where the conductive material E is not disposed.
  • the light emitting element 5 is mounted on a part 3A of the electrode layer 3 through a conductive material E having wettability such as solder or brazing material.
  • the light emitting element 5 is electrically connected to the pair of electrode layers 3.
  • the conductive material having wettability refers to a material in which the contact angle of the conductive material deposited on the upper surface of the electrode layer 3 with respect to the upper surface of the electrode layer 3 is 15 ° to 50 °.
  • connection portion R between the lower surface of the light emitting element 5 and a part 3A of the electrode layer 3.
  • the connection portion R shows a state in which a conductive material E having wettability such as solder or brazing material has spread.
  • the pair of insulating sheets 4 exposes part 3 ⁇ / b> A of the pair of electrode layers 3.
  • the surface of the pair of electrode layers 3 adjacent to the part 3 ⁇ / b> A is covered with an insulating sheet 4.
  • the insulating sheet 4 can prevent the conductive material E such as solder or brazing material from spreading on the surface of the electrode layer 3 covered with the insulating sheet 4.
  • the thickness of the conductive material E such as solder or brazing material formed at the connection location R can be adjusted.
  • the light emitting element 5 is mounted across the pair of insulating sheets 4 via the conductive material E wetted and spread at the connection location R. And the directivity of the excitation light which the light emitting element 5 emits can be adjusted, Furthermore, the direction of the light taken out outside can also be adjusted.
  • the conductive material E leaks and spreads on the pair of electrode layers 3, and the thickness of the conductive material E is adjusted so as to correspond to the thickness of the insulating sheet 4. Can be electrically connected.
  • the light emitting element 5 has a translucent base and an optical semiconductor layer formed on the translucent base.
  • the translucent substrate may be any substrate that can grow an optical semiconductor layer using a chemical vapor deposition method such as a metal organic chemical vapor deposition method or a molecular beam epitaxial growth method.
  • a material used for the light-transmitting substrate for example, sapphire, gallium nitride, aluminum nitride, zinc oxide, silicon carbide, silicon, or zirconium diboride can be used.
  • substrate is 50 micrometers or more and 1000 micrometers or less, for example.
  • the optical semiconductor layer includes a first semiconductor layer formed on the translucent substrate, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. .
  • the first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphide or gallium arsenide, or a group III nitride such as gallium nitride, aluminum nitride, or indium nitride.
  • a physical semiconductor or the like can be used.
  • the thickness of the first semiconductor layer is, for example, 1 ⁇ m to 5 ⁇ m
  • the thickness of the light emitting layer is, for example, 25 nm to 150 nm
  • the thickness of the second semiconductor layer is, for example, 50 nm to 600 nm.
  • an element that emits excitation light in a wavelength range of, for example, 370 nm to 420 nm can be used.
  • the light-emitting element 5 is provided so as to overlap from one side of the pair of electrode layers 3 to the other when seen in a plan view. Part of the heat generated by the light emitting element 5 together with the excitation light is transmitted to the insulating sheet 4 and the substrate 2 through the electrode layer 3. Since the light emitting element 5 is widely provided over both electrode layers 3, heat generated by the light emitting element 5 can be transmitted to both electrode layers 3. Then, the heat generated by the light emitting element 5 can be easily transmitted to the entire surface of the substrate 2, the heat is prevented from being concentrated on a part of the substrate 2, and the light emitting element 5 is peeled off from the substrate 2 or cracked in the substrate 2. Can be effectively suppressed.
  • the insulating sheet 4 is provided so as to overlap from one to the other of the pair of electrode layers 3, so that the temperature transmitted to each of the pair of electrode layers 3 can be shared by both through the insulating sheet 4.
  • the temperature difference between the two can be reduced.
  • the temperature distribution difference on the upper surface of the substrate 2 can be suppressed, and it is possible to reduce each layer on the substrate 2 from being peeled due to thermal stress.
  • the occurrence of cracks in the substrate 2 can be suppressed.
  • the wavelength converter 6 is provided on the substrate 2 so as to cover the insulating sheet 4 and the light emitting element 5.
  • the wavelength conversion unit 6 has a function of emitting visible light having a wavelength longer than that of the excitation light due to the excitation light emitted from the light emitting element 5.
  • the wavelength conversion unit 6 is made of, for example, a silicon resin, an acrylic resin, an epoxy resin, or the like, and a blue phosphor that emits fluorescence of, for example, 430 nm or more and 490 nm or less, for example, green fluorescence that emits fluorescence of 500 nm or more and 560 nm or less.
  • Body for example, a phosphor 7 such as a yellow phosphor that emits fluorescence of 540 nm to 600 nm, for example, a red phosphor that emits fluorescence of 590 nm to 700 nm.
  • the phosphor 7 is uniformly dispersed in the wavelength conversion unit 6.
  • the wavelength conversion unit 6 is designed so as to have a dome shape on the substrate 2 by dropping a material constituting the wavelength conversion unit 6 on the upper surface of the substrate 2 by using, for example, a potting method.
  • the thickness of the wavelength conversion unit 6 is set to, for example, 1 mm or more and 10 mm or less, and is set to have the largest thickness immediately above the light emitting element 5.
  • the amount of excitation of the phosphor in the wavelength conversion unit 6 is adjusted to be substantially uniform over the entire surface of the wavelength conversion unit 6 in plan view. And the uniformity of the light taken out from the wavelength conversion part 6 can be improved by irradiating the whole wavelength conversion part 6 with the excitation light which the light emitting element 5 emits.
  • the light emitting element In the development of light emitting devices, it is required to improve the directivity of light emitted from the light emitting devices and extract light in the desired direction. If the light emitting element is mounted on the mounting surface with the light emitting element tilted with respect to the mounting surface, light is emitted in an unintended direction depending on the magnitude of the tilt.
  • the present embodiment it is possible to provide a light emitting device that can adjust the inclination angle of the light emitting element 5 with respect to the substrate 2 and can improve the directivity of light extracted from the light emitting element 5.
  • the substrate 2 is prepared.
  • the substrate 2 is made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the aluminum oxide raw material powder, and the mixture is made into a sheet and dried before sintering.
  • the substrate 2 is formed.
  • a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste.
  • the pattern used as a pair of electrode layer 3 is printed with respect to the board
  • an organic binder, a plasticizer is applied to the aluminum oxide raw material powder by using, for example, a screen printing method so that a part 3 ⁇ / b> A of the electrode layer 3 is exposed on the pair of electrode layers 3.
  • an insulating paste mixed with a solvent or the like is applied and fired to form the substrate 2 made of a sintered body.
  • the insulating sheet 4 can be formed by, for example, adding and mixing an organic binder, a plasticizer, a solvent, or the like to glass powder containing silicon oxide as a main raw material, and using a screen printing method.
  • the insulating sheet 4 is provided across both electrode layers 3 of a pair of electrode layers provided on the substrate 2 at a distance from each other by screen printing, and a part of each of the pair of electrode layers 3. It can be formed on the substrate 2 by being coated and fired so as to be provided with a gap between them.
  • the light emitting element 5 is made of a conductive material made of, for example, gold-tin. To implement through. Then, the light emitting element 5 and the pair of electrode layers 3 are electrically connected through a conductive material.
  • the wavelength conversion unit 6 uses a mixture of an uncured resin and a phosphor 7. And the material which comprises the wavelength conversion part 6 is dripped using the potting method from upper direction toward the downward direction with respect to the light emitting element 5 of the board
  • ⁇ Modification> 10 to 12 are schematic perspective views of the light emitting device 1 according to a modification. Note that, in the light emitting device 1 according to the modification of the present embodiment, the same portions as those of the light emitting device 1 according to the present embodiment are denoted by the same reference numerals, and the description thereof is omitted as appropriate.
  • the end portions of the pair of electrode layers 3 are covered with the insulating sheet 4, but the present invention is not limited thereto.
  • the insulating sheet 4 may be provided so as to expose the ends of the pair of electrode layers 3.
  • productivity can be improved when a mother substrate from which a plurality of substrates 2 can be taken out is used.
  • a mother substrate from which a plurality of substrates 2 can be taken out is used.
  • a plurality of pairs of electrode layers 3 are formed on a mother substrate.
  • a plurality of insulating sheets 4 are arranged on the mother substrate.
  • the insulating sheet 4 is set to a size that fits in each substrate 2 and is arranged on the mother substrate.
  • the insulating sheet 4 does not contact the blade of the blade, and the possibility that the insulating sheet 4 is peeled off from the substrate 2 when the mother substrate is cut can be reduced, and the productivity of the light emitting device 1 can be improved. it can.
  • the end face of the electrode layer 3 formed on the substrate 2 And the end surface of the insulating sheet 4 can be coat
  • moisture in the operating environment of the light emitting device 1 can be prevented from reaching the end surface of the electrode layer 3 and the end surface of the insulating sheet 4 located on the substrate 2 from the outside, and the bonding strength to the substrate 2 can be improved.
  • peeling of the electrode layer 3 and the insulating sheet 4 from the substrate 2 due to the stress generated by the heat from the light emitting element 5 can be suppressed.
  • the light emitting device 1 has the operational effect of being able to operate normally over a long period of time due to suppression of malfunctions and long-term reliability degradation due to moisture in the operating environment and heat from the light emitting element 5.
  • the upper surfaces of the pair of insulating sheets 4 are formed flat, but the present invention is not limited thereto.
  • the upper surfaces of the pair of insulating sheets 4a may not be flat.
  • the pair of insulating sheets 4a are positioned such that the height position of the region overlapping the pair of electrode layers 3 in plan view is higher than the height position of the region not overlapping the pair of electrode layers 3 in plan view. Further, in the light emitting element 4, the portion protruding above the upper surface of the insulating sheet 4 is in contact with the lower surface of the light emitting element 5. At this time, since the region of the pair of insulating sheets 4a that protrudes from the pair of electrode layers 3 protrudes upward, two protrusions are formed on one of the pair of insulating sheets 4a, and the other of the pair of insulating sheets 4a also has two protrusions. Two ledges are formed.
  • the four protrusions of the pair of insulating sheets 4 a support the four places on the lower surface of the light emitting element 5. It is possible to prevent the light emitting element 5 from being inclined with respect to the upper surface of the substrate 2 by contacting the four portions on the lower surface of the light emitting element 5 with the insulating sheet 4a.
  • the lower surface of the light emitting element 5 is in contact with the upper surface of the pair of insulating sheets 4a and a region where the pair of insulating sheets 4a and the pair of electrode layers 3 overlap in plan view.
  • the light traveling downward is reflected by the electrode layer 3 and travels upward.
  • a large amount of light emitted from the light emitting element 5 can be emitted in a direction perpendicular to the upper surface of the insulating sheet 4a.
  • the directivity of light extracted from the light emitting device 1 can be improved.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif électroluminescent (1), comprenant : un substrat (2) ; une paire de couches d'électrode (3) implantées sur le substrat de silicium (2) en étant écartées l'une de l'autre ; une paire de films isolants (4) placés au-dessus des deux couches d'électrode (3) en étant écartés l'un de l'autre et recouvrant les couches d'électrode (3) en laissant à découvert des parties respectives de celles-ci ; et un élément électroluminescent (5) placé au-dessus des films isolants (4), de sorte que l'élément électroluminescent est superposé aux films isolants, et qu'il est connecté électriquement aux parties respectives des couches d'électrode (3). De plus, dans le dispositif électroluminescent (1), les surfaces supérieures des films isolants (4) et la surface inférieure de l'élément électroluminescent (5) sont en contact les unes avec l'autre.
PCT/JP2011/056078 2010-04-13 2011-03-15 Dispositif électroluminescent WO2011129172A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-092137 2010-04-13
JP2010092137 2010-04-13

Publications (1)

Publication Number Publication Date
WO2011129172A1 true WO2011129172A1 (fr) 2011-10-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017045607A (ja) * 2015-08-26 2017-03-02 積水化学工業株式会社 導電材料、接続構造体及び接続構造体の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005043622A (ja) * 2003-07-28 2005-02-17 Toshiba Corp 光半導体モジュール及びその製造方法
JP2006013324A (ja) * 2004-06-29 2006-01-12 Toyoda Gosei Co Ltd 発光装置
JP2006011239A (ja) * 2004-06-29 2006-01-12 Kyocera Corp 液晶表示装置
JP2007273592A (ja) * 2006-03-30 2007-10-18 Kyocera Corp 発光素子用配線基板および発光装置
JP2009158634A (ja) * 2007-12-26 2009-07-16 Kyocera Corp 発光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005043622A (ja) * 2003-07-28 2005-02-17 Toshiba Corp 光半導体モジュール及びその製造方法
JP2006013324A (ja) * 2004-06-29 2006-01-12 Toyoda Gosei Co Ltd 発光装置
JP2006011239A (ja) * 2004-06-29 2006-01-12 Kyocera Corp 液晶表示装置
JP2007273592A (ja) * 2006-03-30 2007-10-18 Kyocera Corp 発光素子用配線基板および発光装置
JP2009158634A (ja) * 2007-12-26 2009-07-16 Kyocera Corp 発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017045607A (ja) * 2015-08-26 2017-03-02 積水化学工業株式会社 導電材料、接続構造体及び接続構造体の製造方法

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