WO2011125733A1 - Appareil de formation de film - Google Patents

Appareil de formation de film Download PDF

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Publication number
WO2011125733A1
WO2011125733A1 PCT/JP2011/058001 JP2011058001W WO2011125733A1 WO 2011125733 A1 WO2011125733 A1 WO 2011125733A1 JP 2011058001 W JP2011058001 W JP 2011058001W WO 2011125733 A1 WO2011125733 A1 WO 2011125733A1
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WO
WIPO (PCT)
Prior art keywords
frequency power
power supply
film
abnormal discharge
unit
Prior art date
Application number
PCT/JP2011/058001
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English (en)
Japanese (ja)
Inventor
美和 田中
誠 菊地
研也 中島
太郎 矢島
童吾 大橋
善識 宮野
浩平 細野
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株式会社アルバック
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Priority to JP2012509512A priority Critical patent/JP5691081B2/ja
Publication of WO2011125733A1 publication Critical patent/WO2011125733A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Definitions

  • the present invention relates to a film forming apparatus.
  • Such a solar cell element includes a semiconductor layer, a passivation film formed on the semiconductor layer, and an electrode.
  • the passivation film is a film that functions as a protective film for protecting the semiconductor layer and also functions as an antireflection film, and is formed by a plasma CVD method.
  • the plasma CVD method is a method of forming a film by forming a source gas into plasma by applying a high frequency from a high frequency power source in order to activate a chemical reaction.
  • this passivation film is made of a silicon nitride film or the like.
  • a mixed gas of silane (SiH 4 ) and ammonia (NH 3 ) is diluted with nitrogen (N 2 ) and decomposed by glow discharge. It is formed by being plasmarized and deposited.
  • Patent Document 1 there is a problem that it is easy to damage parts in the chamber when abnormal discharge occurs. Further, the film forming method described in Patent Document 1 has a problem that a desired film forming speed cannot be obtained and a film having a desired film quality cannot be formed. Such a problem is not limited to the formation of the passivation film in the solar cell element, and is a problem that occurs in the plasma CVD apparatus in general.
  • an object of the present invention is to solve the above-described problems of the prior art, and to suppress damage to parts constituting the chamber when abnormal discharge occurs, and to sufficiently obtain film quality and film thickness.
  • An object of the present invention is to provide a film forming apparatus that can perform the above process.
  • the film formation apparatus of the present invention is provided in a vacuum chamber, and is provided so as to face a film formation target placed on the placement unit on which the film formation target is placed.
  • a shower plate for introducing gas; and a plurality of AC power sources connected to at least one of the shower plate and the mounting portion, wherein the plurality of AC power sources include at least one high frequency power source for supplying high frequency power;
  • each abnormal discharge detecting means is configured to stop the power supply of the AC power supply when the abnormal discharge is detected, so that damage to the components in the chamber can be reduced.
  • the plurality of AC power supplies are composed of at least one high-frequency power supply that supplies high-frequency power and one low-frequency power supply that supplies low-frequency power, so that sufficient film quality and film thickness can be obtained.
  • each abnormal discharge detection means when detecting abnormal discharge, stops the power supply of all the AC power supplies, thereby suppressing the power supply from being alternately stopped due to erroneous recognition of the occurrence of arc discharge. Sufficient film quality and film thickness can be obtained.
  • one high frequency power source and one low frequency power source are provided on the shower plate.
  • each abnormal discharge detecting means includes a switch unit that supplies or stops power from each AC power source to the shower plate, and an output signal from each AC power source. Abnormality of detecting a reflected wave component, and determining whether or not the reflected wave component detected by the detection unit exceeds a threshold, and sending a stop signal to turn off the switch unit when the threshold is exceeded A discharge determination unit, and a stop signal from the abnormal discharge determination unit of each abnormal discharge detection unit is input to the switch units of all the abnormal discharge detection units.
  • the film forming apparatus of the present invention it is possible to suppress damage to the components constituting the interior of the chamber when abnormal discharge occurs, and to sufficiently obtain the film quality and film thickness.
  • the film forming apparatus 1 performs a film formation by performing a plasma CVD method, for example, for forming a passivation film in a solar cell element.
  • the film forming apparatus 1 includes a vacuum chamber 11 that can maintain a desired vacuum state.
  • the vacuum chamber 11 is provided with a placement unit 12 having a heating device (not shown), and the substrate S to be deposited is placed on the placement unit 12.
  • the substrate S can be adjusted to a desired substrate temperature during film formation by a heating device.
  • a shower plate 13 is provided on the ceiling surface of the vacuum chamber 11 so as to face the substrate S.
  • the shower plate 13 is connected to gas introducing means 14 for introducing a film forming gas, and is configured so that the film forming gas can be uniformly introduced into the vacuum chamber 11.
  • the gas introduction means 14 is configured to be able to introduce, for example, three kinds of gases, and different gases (in this embodiment, SiH 4 , NH 3 , and N 2 ) are sealed therein.
  • Sources 14a, 14b, and 14c are connected to the gas introduction pipe 14d through valves 14e, respectively.
  • the gas introduction unit 14 is configured so that three kinds of film formation gases can be introduced.
  • a gas introduction unit may be used so that the film formation gas can be introduced according to a desired film configuration. 14 may be provided with six types of gas sources, and the film forming gas may be selected according to the film structure.
  • the shower plate 13 is connected to a high frequency power supply 15 so that a high frequency voltage is applied to the shower plate 13. Further, a low frequency power supply 16 is also connected to the shower plate 13 so that a low frequency voltage is applied to the shower plate 13. Therefore, the shower plate 13 functions as a gas inlet for uniformly introducing the film forming gas into the vacuum chamber 11 and also functions as a discharge electrode to which a high frequency voltage and a low frequency voltage are applied. . That is, in the film forming apparatus 1 according to the present embodiment, it is possible to perform film formation by forming a plasma by applying voltages of different frequencies to the shower plate 13 by the high frequency power supply 15 and the low frequency power supply 16 during film formation. It is configured as follows.
  • the film forming apparatus 1 of the present embodiment forms the mixed plasma in this way, so that the film forming speed when only a high frequency voltage is applied is fast and the film quality when only a low frequency voltage is applied is high. Both have the advantage of being good. That is, according to the film forming apparatus 1 of the present embodiment, the film forming speed is high and the film quality of the obtained film is good.
  • the film quality of the passivation film can be improved in the formation of the passivation film, thereby suppressing loss due to carrier recombination in the solar cell element. That is, the plasma density and plasma potential are determined by the conditions for generating plasma such as the gas type, input power, and electrode distance, but are formed by applying only a high frequency (13.56 MHz to 27.12 MHz) voltage. In the case of plasma, the film quality necessary for the solar cell element, that is, the film density and the fixed charge in the film could not be obtained under the high-speed film formation condition of 30 ⁇ / s or more. For this reason, the conventional passivation film cannot sufficiently suppress the loss due to carrier recombination.
  • the passivation film is formed, for example, by a solar cell by superimposing and applying voltages having different frequencies of high frequency and low frequency to form the passivation film.
  • the film quality preferable as an element, specifically, high film density and high fixed charge concentration in the film. This is because the electric charge of ions excited at a low frequency voltage is added to the charge of plasma excited at a high frequency voltage, thereby increasing the potential difference between the substrate and the plasma, that is, the sheath electric field. As a result, the ion energy incident on the substrate surface can be increased.
  • the passivation film is formed more densely (high film density), and the charge present in the passivation film also increases. As a result, the passivation film Has a high positive fixed charge concentration.
  • a high frequency power source side control unit 17 for controlling a high frequency signal from the high frequency power source 15 is interposed, and between the low frequency power source 16 and the shower plate 13.
  • a low frequency power supply side control unit 18 for controlling a low frequency signal from the low frequency power supply 16 is interposed therebetween.
  • the high frequency power supply side control unit 17 and the low frequency power supply side control unit 18 (hereinafter collectively referred to as the control units 17 and 18) have the same configuration.
  • the control units 17 and 18 will be described with reference to FIG.
  • the control units 17 and 18 include a switch unit 20, an amplifier 21, a matching box 22, a detector 23, a feedback control unit 24, and an arc cut unit 25, respectively.
  • the switch unit 20 When the stop signal is input from the arc cut unit 25 described later, the switch unit 20 is turned off and stops the power supply from the power source. When no stop signal is input, the power supply is turned on and power is supplied from the power source.
  • the amplifier 21 amplifies the input signal input to the amplifier 21 based on the set gain of the amplification operation.
  • the matching box 22 matches the input signal input to the matching box 22 so as to have a desired impedance.
  • the detector 23 detects the traveling wave component and the reflected wave component of the input signal input to the detector 23. Then, the detector 23 inputs a traveling wave detection signal corresponding to the power of the traveling wave component of the input signal to the feedback control unit 24. The detector 23 inputs a reflected wave detection signal corresponding to the power of the reflected wave component of the input signal to the arc cut unit 25.
  • the feedback control unit 24 performs PI control, sets the gain of the amplification operation of the amplifier 21 so that the input traveling wave detection signal follows a preset target value, and sets the gain of the set gain.
  • a setting signal indicating a value is input to the amplifier 21. Thereby, traveling wave power is controlled.
  • the arc cut unit 25 determines that the detection signal from the detector 23 exceeds the threshold value, that is, when it is determined that arc discharge (abnormal discharge) is occurring, the arc cut unit 25 outputs a stop signal for a predetermined time. To send.
  • the operation of the control units 17 and 18 will be described by taking the high frequency power supply side control unit 17 as an example.
  • the high frequency power supply 15 is turned on and a high frequency signal is generated.
  • the generated high frequency signal is input to the amplifier 21 through the switch unit 20, amplified with a predetermined gain, and output from the amplifier 21.
  • the high-frequency signal output from the amplifier 21 is input to the matching box 22, matched so as to have a desired impedance, and output from the matching box 22.
  • the high frequency signal output from the matching box 22 is applied to the shower plate 13. When a high frequency signal is applied to the shower plate 13, plasma is generated in the vacuum chamber 11.
  • the detector 23 detects the traveling wave component and the reflected wave component of the high-frequency signal that generates plasma, generates a traveling wave detection signal corresponding to the power of the traveling wave component, and inputs it to the feedback control unit 24.
  • the feedback control unit 24 sets the gain of the amplification operation of the amplifier 21 so that the high frequency signal becomes a target value based on the input detection signal, and inputs a setting signal indicating the set gain value to the amplifier 21.
  • the amplifier 21 changes the gain of the amplifier 21 based on the input setting signal. Thereby, the high frequency signal input to the amplifier 21 is amplified so as to follow the target value based on the changed gain. In this way, in this embodiment, feedback control is performed so that desired plasma can always be generated in the vacuum chamber 11.
  • the detector 23 generates a reflected wave detection signal corresponding to the power of the reflected wave component of the high frequency signal, and inputs this reflected wave detection signal to the arc cut unit 25.
  • the reflected wave detection input to the arc cut unit 25 is detected.
  • the signal also increases.
  • the arc cut unit 25 determines that the reflected wave detection signal input from the detector 23 has exceeded the threshold value, the arc cut unit 25 determines that arc discharge (abnormal discharge) has occurred, and stops the signal for a predetermined time. Is sent to the switch unit 20.
  • the switch unit 20 When the stop signal is input to the switch unit 20, the switch unit 20 is turned off, and the high frequency signal from the high frequency power supply 15 is cut off. Thereby, the plasma by the high frequency signal formed in the vacuum chamber 11 disappears. There is a problem that the shower plate 13 is damaged if the electric power is continuously supplied when the arc discharge is generated in the vacuum chamber 11, but in this embodiment, the electric power supply is cut off when the arc discharge is generated. Can reduce the damage.
  • the low frequency power supply side control unit 18 is configured similarly to the high frequency power supply side control unit 17.
  • the switch unit 20, the amplifier 21, the matching box 22, the detector 23, the feedback control unit 24, and the arc cut unit 25 are configured to be able to execute each function, The configuration is not limited.
  • the arc cut unit 25 sends a stop signal to the switch unit 20 based on the determination that the reflected wave detection signal exceeds the threshold value. As a result, the switch unit 20 is turned off for a predetermined time, and the power supply from the high frequency power supply 15 is stopped. Thereby, the plasma by the high frequency power supply 15 disappears.
  • the impedance in the vacuum chamber 11 becomes different from a predetermined value (plasma from both power supplies).
  • the high frequency power supply side control unit 17 and the low frequency power supply side control unit 18 erroneously recognize that the arc discharge has occurred alternately, thereby stopping the power supply alternately.
  • the desired plasma cannot be formed, and as a result, there is a possibility that the film quality of the obtained film is deteriorated. Further, since the power sharing is alternately stopped, there is a problem that the film forming speed is lowered.
  • the control units 17 and 18 are configured such that the stop signal output from one arc cut unit 25 is also input to the other switch unit 20. That is, in the high frequency power supply side control unit 17, the stop signal output from the arc cut unit 25 is input to the switch unit 20 and the switch unit 20 of the low frequency power supply side control unit 18.
  • each arc cut unit 25 is connected to each switch from the coupling wiring 26 so that the stop signal output from the arc cut unit 25 is input to the switch unit 20 and the switch unit 20 of the high frequency power supply side control unit 17. Connected to the unit 20.
  • the power supply is stopped as shown in FIG. 4 shows, at each time, (1) the value of the reflected wave component of the high frequency power supply 15 detected by the detector 23, (2) the presence or absence of occurrence of arc discharge on the high frequency power supply 15 side, and (3) the high frequency power supply side.
  • the on / off state of the switch unit 20 of the low frequency power supply side control unit 18 is shown.
  • the arc cut unit 25 sends a stop signal to the switch unit 20 when determining that the reflected wave detection signal input from the detector 23 has exceeded the threshold value.
  • the switch unit 20 is turned off for a predetermined time, and the power supply from the high frequency power supply 15 is stopped. Thereby, the plasma by the high frequency power supply 15 disappears.
  • each arc cut unit 25 is configured to be connected to each switch unit 20, deterioration in film quality and film formation speed due to alternately stopping plasma formation due to erroneous recognition of the arc cut unit 25. The decrease can be suppressed.
  • a film forming method using the film forming apparatus 1 will be described.
  • the substrate S is placed on the placement unit 12 in the vacuum chamber 11.
  • the vacuum chamber 11 is brought into a desired vacuum state.
  • a film forming gas is introduced from the gas introducing means 14, and power supply is started from the high frequency power supply 15 and the low frequency power supply 16 to generate plasma, and a film is formed on the substrate S.
  • a passivation film while applying a voltage from the high-frequency power supply 15 and the low-frequency power supply 16 a film with good film quality can be formed with a short tact time.
  • SiH 4 is introduced as a Si-containing gas, and at least one gas selected from NH 3 and N 2 is used as an N-containing gas. Introduce.
  • SiH 4 is introduced as a Si-containing gas, and at least one gas selected from CO 2 , N 2 O, and O 2 is introduced as an O (oxygen) -containing gas.
  • SiH 4 is introduced as the Si-containing gas, and at least one gas selected from NH 3 and N 2 as the N-containing gas is used as the N-containing gas.
  • one or more gases selected from CO 2 , N 2 O and O 2 are introduced.
  • an inert gas such as Ar gas may be introduced into the film forming gas as a carrier gas.
  • the flow rate of each gas is 1500 to 1600 sccm for SiH 4 , 3000 to 6000 sccm for NH 3 , and 4000 to 7000 sccm for N 2 .
  • the high frequency power source 15 only needs to be able to apply a high frequency voltage of 13.56 to 27.12 MHz, and the low frequency power source 16 only needs to be able to apply a low frequency voltage of 20 to 400 kHz.
  • the input power of the high frequency power supply 15 is 1000 to 3500 W.
  • the input power of the low frequency power supply 16 is 300 to 2000 W.
  • the stop signal output from one arc cut unit 25 is also input to the other switch unit 20 by the coupling wiring 26. It is configured as such.
  • the stop signal is input to the switch unit 20 and at the same time the other control unit Since the stop signal is also input to the switch unit 20, the power supply can be stopped at the same time, and the power supply is not stopped alternately. Therefore, according to the present embodiment, the deposition rate does not decrease and the quality of the obtained film does not decrease.
  • Example 5 the SiN film was formed using the film forming apparatus 1.
  • a substrate S silicon substrate
  • the substrate temperature 350 ° C.
  • pressure 190 Pa
  • SiH 4 flow rate 1500 sccm
  • NH 3 flow rate 5000 sccm
  • N 2 flow rate 6000 sccm
  • E / S 23 mm
  • frequency of the low frequency power supply 16 250 kHz
  • input power of the low frequency power supply 16 2000 MHz
  • film formation time 20 seconds
  • a nitride film was formed.
  • Examples 2 to 5 silicon nitride films were formed in the same manner as in Example 1 under the conditions shown in Table 1. (Comparative Examples 1 to 5) As Comparative Examples 1 to 5, the stop signal from the arc cut unit 25 of one control unit is not input to the switch unit 20 of the other control unit, that is, except that a film forming apparatus having no coupling wiring is used. Film formation was performed in the same manner under the same conditions as in Examples 1-5.
  • Example 1 compared to Comparative Examples 1 to 5, since the erroneous recognition of arc discharge was suppressed by the coupling wiring 26, the number of times the switch unit 20 was turned off decreased. Along with this, in Examples 1 to 5, the film thickness increased as compared with Comparative Examples 1 to 5.
  • the number of times of off on the high frequency power supply 15 side is 300 times, and the number of times of off on the low frequency power supply 16 side is 295 times, which is often erroneously recognized.
  • Example 1 the number of off times on the high frequency power supply 15 side was 54 times, the number of off times on the low frequency power supply 16 side was 53 times, and the number of off times decreased to about 1/6.
  • the film thickness was 605 mm in the case of Example 1 and 527 mm in the case of Comparative Example 1, and the film thickness increased by about 10% or more. Note that the number of off times on the high frequency power supply 15 side and the number of off times on the low frequency power supply 16 side may not match because a time lag may occur in transmission / reception of the stop signal.
  • the stop signal is input to both the high frequency power supply side control unit 17 and the low frequency power supply side control unit 18 by one coupling wiring 26, but the present invention is not limited to this.
  • another coupling wiring may be provided.
  • the switch part 20 will not be limited if it functions as a switch.
  • a NAND circuit may be used.
  • the SiN film is formed as an example, but the plasma CVD apparatus is not limited to this application.
  • one high-frequency power source 15 and one low-frequency power source 16 are provided on the shower plate 13, but the present invention is not limited to this. It is sufficient that at least one high frequency power supply 15 and low frequency power supply 16 are provided. For example, two high frequency power supplies 15 and one low frequency power supply 16 may be provided. Moreover, you may provide one each in the mounting part 12 and the shower plate 13. FIG.
  • the present invention can form a film with good film quality and a sufficient film formation speed, it can be used, for example, in the field of manufacturing solar cell elements.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne un appareil de formation de film équipé d'une unité de platine (12) sur laquelle est placée une cible pour la formation d'un film, disposée dans une chambre à vide (11) ; une plaque à orifices (13) placée en face de la cible pour la formation d'un film placée sur l'unité de platine (12), pour introduire un gaz de formation de film ; et une pluralité d'alimentations en CA reliées à la plaque à orifices et/ou l'unité de platine. La pluralité d'alimentations en CA se compose d'au moins une alimentation haute fréquence (15) qui fournit une puissance haute fréquence, et d'une alimentation basse fréquence (16) qui fournit une puissance basse fréquence qui est inférieure à la puissance haute fréquence. Un moyen de détection de décharge anormale permet de détecter les décharges anormales dans la chambre à vide. Quand une décharge anormale est détectée, toutes les alimentations en CA sont coupées.
PCT/JP2011/058001 2010-04-02 2011-03-30 Appareil de formation de film WO2011125733A1 (fr)

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JP2012509512A JP5691081B2 (ja) 2010-04-02 2011-03-30 成膜装置

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JP2010-086490 2010-04-02
JP2010086490 2010-04-02

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013190987A1 (fr) * 2012-06-18 2013-12-27 株式会社京三製作所 Dispositif d'alimentation électrique à haute fréquence et procédé de régulation basé sur la puissance d'ondes réfléchies
CN103943451A (zh) * 2013-01-17 2014-07-23 东京毅力科创株式会社 等离子体处理装置和等离子体处理装置的操作方法
CN108878258A (zh) * 2017-05-11 2018-11-23 Asm Ip控股有限公司 用于在沟槽的侧壁或平坦表面上选择性地形成氮化硅膜的方法
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions

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JP2008187181A (ja) * 2007-01-30 2008-08-14 Applied Materials Inc プラズマイオン密度均一性を制御するため可変高さ接地リターンパスを備えたプラズマリアクタにおいてワークピースを処理する方法
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JP2009070844A (ja) * 2007-09-10 2009-04-02 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法及び記憶媒体

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WO2013190987A1 (fr) * 2012-06-18 2013-12-27 株式会社京三製作所 Dispositif d'alimentation électrique à haute fréquence et procédé de régulation basé sur la puissance d'ondes réfléchies
JP2014002898A (ja) * 2012-06-18 2014-01-09 Kyosan Electric Mfg Co Ltd 高周波電力供給装置、及び反射波電力制御方法
CN104322154A (zh) * 2012-06-18 2015-01-28 株式会社京三制作所 高频电力供给装置以及反射波电力控制方法
US9070537B2 (en) 2012-06-18 2015-06-30 Kyosan Electric Mfg. Co., Ltd. High-frequency power supply device and reflected wave power control method
CN103943451A (zh) * 2013-01-17 2014-07-23 东京毅力科创株式会社 等离子体处理装置和等离子体处理装置的操作方法
JP2014137911A (ja) * 2013-01-17 2014-07-28 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置の運転方法
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
CN108878258A (zh) * 2017-05-11 2018-11-23 Asm Ip控股有限公司 用于在沟槽的侧壁或平坦表面上选择性地形成氮化硅膜的方法
JP2018190986A (ja) * 2017-05-11 2018-11-29 エーエスエム アイピー ホールディング ビー．ブイ． トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法
JP7233173B2 (ja) 2017-05-11 2023-03-06 エーエスエム アイピー ホールディング ビー．ブイ． トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法

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