WO2011122211A1 - 半導体封止用樹脂組成物の製造方法および粉砕装置 - Google Patents
半導体封止用樹脂組成物の製造方法および粉砕装置 Download PDFInfo
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- WO2011122211A1 WO2011122211A1 PCT/JP2011/054696 JP2011054696W WO2011122211A1 WO 2011122211 A1 WO2011122211 A1 WO 2011122211A1 JP 2011054696 W JP2011054696 W JP 2011054696W WO 2011122211 A1 WO2011122211 A1 WO 2011122211A1
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- composition
- gas
- resin composition
- pulverization
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- 239000011342 resin composition Substances 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000007789 sealing Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 10
- 239000000203 mixture Substances 0.000 claims abstract description 98
- 238000010298 pulverizing process Methods 0.000 claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 claims description 38
- 239000002245 particle Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 27
- 239000000843 powder Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 14
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 13
- 238000003860 storage Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 33
- 239000000945 filler Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 14
- 238000002156 mixing Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 238000004898 kneading Methods 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 amine compounds Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/12—Powdering or granulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C19/00—Other disintegrating devices or methods
- B02C19/06—Jet mills
- B02C19/061—Jet mills of the cylindrical type
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/12—Powdering or granulating
- C08J3/122—Pulverisation by spraying
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a method for producing a semiconductor sealing resin composition and a pulverizing apparatus.
- a semiconductor package in which a semiconductor chip (semiconductor element) is covered (sealed) with a resin sealing material is known.
- the sealing material for the semiconductor package is obtained by molding a resin composition containing a curable resin by, for example, transfer molding.
- the production process of the resin composition includes a pulverization (fine pulverization) step of finely pulverizing a resin composition (composition) containing a plurality of types of powder materials.
- a pulverization (fine pulverization) step of finely pulverizing a resin composition (composition) containing a plurality of types of powder materials is performed by an airflow type pulverizer such as a vibrating ball mill, a continuous rotating ball mill, or a jet mill (see, for example, Patent Document 1).
- the airflow type pulverizer is used because it can prevent (or suppress) the mixing of metal foreign matters (metal foreign matters) into the resin composition during the pulverization of the resin composition. It is preferable to use it.
- An object of the present invention is to provide a method for producing a resin composition for encapsulating a semiconductor and a pulverizing apparatus that has good yield and good curability while preventing the introduction of metal foreign matters during pulverization. There is.
- the present invention provides a method for producing a resin composition for semiconductor encapsulation, Using an airflow type pulverizer, a composition containing a curable resin powder material and an inorganic filler powder material is swirled by a swirling gas flow in a chamber of the pulverizer, and the composition is pulverized. Having a process, In the grinding step, The pressure of the gas supplied into the chamber is 0.3 MPa or more, The temperature of the gas supplied into the chamber is 20 ° C. or lower, The humidity of the gas supplied into the chamber is 40% RH or less, It is a manufacturing method of the resin composition for semiconductor sealing characterized by these.
- the composition contains a curing accelerator,
- the curable resin preferably contains an epoxy resin and a phenol resin-based curing agent.
- the content of the inorganic filler in the composition pulverized in the pulverization step is preferably 50 to 80 wt%.
- the average value of the inner diameter of the chamber is preferably 10 to 50 cm.
- the particle size distribution of the composition has a particle size of 250 ⁇ m or more of 1 wt% or less, a particle size of 150 ⁇ m or more, and less than 250 ⁇ m of 9 wt%.
- the particle size of less than 150 ⁇ m is preferably 90 wt% or more.
- the present invention is an airflow-type pulverizer for rotating a composition containing a powder material of a curable resin and a powder material of an inorganic filler by an airflow, and pulverizing the composition.
- Supply means for supplying the composition; A chamber; Swirl flow generating means for generating a swirl flow of gas in the chamber; Pressure adjusting means for adjusting the pressure of the gas supplied into the chamber; Temperature adjusting means for adjusting the temperature of the gas supplied into the chamber; Humidity adjusting means for adjusting the humidity of the gas supplied into the chamber;
- the pressure of the gas supplied into the chamber is set to 0.3 MPa or more, the temperature of the gas supplied into the chamber is set to 20 ° C. or less, and the humidity of the gas supplied into the chamber is set to 40% RH or less
- the pulverization apparatus is configured to generate a swirling flow of gas, swirl the composition, and pulverize the composition.
- the swirl flow generating means has a plurality of nozzles arranged along the circumferential direction of the chamber and ejecting the gas into the chamber.
- the pressure adjusting means is an apparatus that compresses the gas before the gas is supplied into the chamber.
- the temperature adjusting means is an apparatus that cools the gas before the gas is supplied into the chamber.
- the humidity adjusting means is an apparatus for drying the gas before the gas is supplied into the chamber.
- an outlet from which the pulverized composition is discharged and a wall portion surrounding the outlet are provided at the bottom of the chamber, It is preferable that the pulverized composition is configured to pass over the wall portion and be discharged from the outlet.
- the supply means has a supply port for supplying the composition into the chamber.
- the supply port is provided at a position shifted from the center of the swirling flow of the gas.
- FIG. 1 is a diagram illustrating a production process of a resin composition.
- FIG. 2 is a side view schematically showing an embodiment of the crushing apparatus of the present invention.
- FIG. 1 is a view showing a manufacturing process of a resin composition
- FIG. 2 is a side view schematically showing an embodiment of a crushing apparatus of the present invention
- FIG. 3 is an inside of a crushing part of the crushing apparatus shown in FIG.
- FIG. 4 is a cross-sectional view showing a chamber of a pulverization unit of the pulverization apparatus shown in FIG.
- FIGS. 2 and 4 the upper side in FIGS. 2 and 4 is described as “upper”, the lower side is “lower”, the left side is “left”, and the right side is “right”. 2, the description of the nozzle 71 and the like is omitted, the description of the supply unit 73 and the like is omitted in FIG. 3, and the description of the nozzles 71 and 72, the supply unit 73 and the like is omitted in FIG. Has been.
- a pulverizer 1 shown in FIG. 2 is an airflow type pulverizer used in a fine pulverization (pulverization) step in producing a resin composition which is a molded body (a green compact).
- pulverization fine pulverization
- each material which is a raw material of a resin composition is prepared.
- the raw material includes a curable resin and a filler (inorganic filler) (inorganic particles), and further includes a curing accelerator and a coupling agent as necessary.
- the curable resin include an epoxy resin, and it is preferable to use an epoxy resin using a phenol aralkyl type, a triphenolmethane type, a polyaromatic ring type or the like as a curing agent.
- epoxy resin examples include a cresol novolac type, a biphenyl type, a dicyclopentadiene type, a triphenolmethane type, and a polyaromatic ring type.
- phenol resin examples include a phenol novolac type, a phenol aralkyl type, a triphenolmethane type, and a polyaromatic ring type.
- filler inorganic filler
- fused silica crushed and spherical
- crystalline silica alumina, and the like.
- Examples of the curing accelerator include phosphorus compounds and amine compounds.
- Examples of the coupling agent include silane compounds.
- the predetermined material may be abbreviate
- examples of other materials include a colorant, a release agent, a low stress agent, and a flame retardant.
- Examples of the flame retardant include brominated epoxy resin, antimony oxide, and non-halo / non-antimony type.
- Examples of the non-halo / non-antimony flame retardant include organic phosphorus, metal hydrate, nitrogen-containing resin, and the like.
- a predetermined material of raw materials is first pulverized (finely pulverized) by a pulverizer 1 so as to have a predetermined particle size distribution.
- the raw material to be pulverized is, for example, a raw material other than a filler such as a curable resin (which may include a curing agent), a curing accelerator, or the like. Therefore, a part of the filler is added. Thereby, the 1st composition containing multiple types of powder materials, such as curable resin, a filler, and a hardening accelerator, is obtained.
- the pulverizer 1 will be described in detail later.
- a predetermined material of the raw materials for example, a part of the filler (remaining part) can be subjected to a surface treatment.
- a surface treatment for example, a coupling agent or the like is attached to the surface of the filler.
- the fine pulverization and the surface treatment may be performed at the same time, or one of them may be performed first.
- the first composition obtained in the fine pulverization step and the second composition obtained in the surface treatment step that is, a resin composition containing a plurality of types of powder materials having different specific gravities. Mix (composition) thoroughly.
- a mixing device for example, a high-speed mixing device having rotating blades can be used.
- the mixed resin composition is kneaded by a kneading apparatus.
- a kneading apparatus for example, an extrusion kneader such as a uniaxial kneading extruder, a biaxial kneading extruder, or a roll kneader such as a mixing roll can be used.
- the kneaded resin composition is degassed by a degassing apparatus.
- the degassed bulk resin composition is formed into a sheet shape by a sheet forming apparatus to obtain a sheet-shaped resin composition.
- a sheeting roll or the like can be used as the sheet forming apparatus.
- the sheet-shaped resin composition is pulverized with a pulverizer so as to have a predetermined particle size distribution to obtain a powdered resin composition.
- a pulverizer for example, a hammer mill, a stone mill, a roll crusher, or the like can be used as the pulverizer.
- a die having a small diameter is installed at the outlet of the kneader and discharged from the die without going through the sheeting, cooling, and pulverization steps described above.
- a hot cut method of obtaining a granular resin composition by cutting the molten resin composition to a predetermined length with a cutter or the like can also be used. In this case, after obtaining the granular resin composition by the hot cut method, it is preferable to perform deaeration before the temperature of the resin composition is lowered so much.
- the powdered resin composition can be compression-molded by a molded body manufacturing apparatus (tablet apparatus) to obtain a resin composition that is a molded body.
- This resin composition is used for covering (sealing) a semiconductor chip (semiconductor element), for example. That is, the resin composition is molded, for example, by transfer molding, and a semiconductor chip is covered as a sealing material to manufacture a semiconductor package.
- the tableting step may be omitted and a powdery resin composition may be used as a finished product.
- the sealing material can be formed by compression molding, injection molding, or the like.
- the pulverizing apparatus 1 is an airflow type pulverizing apparatus that pulverizes a resin composition (composition) containing a plurality of types of powder materials by an airflow.
- the first composition (resin A pulverizing unit 2 for pulverizing the composition), a cooling device 3, a high-pressure air generating device 4, and a storage unit 5 for storing the pulverized first composition.
- the pulverizing unit 2 includes a chamber 6 having a cylindrical (tubular) portion, and is configured to pulverize the first composition in the chamber 6. Note that air (gas) swirling flow is generated in the chamber 6 during pulverization.
- the dimension of the chamber 6 is not particularly limited, but the average inner diameter of the chamber 6 is preferably about 10 to 50 cm, more preferably about 15 to 30 cm.
- the inner diameter of the chamber 6 is constant along the vertical direction in the configuration shown in the drawing, but is not limited to this, and may vary along the vertical direction.
- the outlet 61 for discharging the pulverized first composition is formed at the bottom 61 of the chamber 6.
- the outlet 62 is located at the center of the bottom 61. Further, the shape of the outlet 62 is not particularly limited, but is circular in the illustrated configuration.
- the size of the outlet 62 is not particularly limited, but the diameter is preferably about 3 to 30 cm, more preferably about 7 to 15 cm.
- the bottom 61 of the chamber 6 is provided with a pipe line (tubular body) 64 having one end communicating with the outlet 62 and the other end communicating with the storage section 5.
- a wall portion 63 surrounding the periphery of the outlet 62 is formed in the vicinity of the outlet 62 of the bottom portion 61.
- the wall portion 63 can prevent the first composition from being unintentionally discharged from the outlet 62 during pulverization.
- the wall 63 has a cylindrical shape, and in the illustrated configuration, the inner diameter of the wall 63 is constant along the vertical direction, and the outer diameter gradually increases from the upper side to the lower side. That is, the height (length in the vertical direction) of the wall portion 63 gradually increases from the outer peripheral side toward the inner peripheral side. Moreover, the wall part 63 is curving in concave shape by side view. Thereby, the pulverized first composition can smoothly move toward the outlet 62.
- a protrusion 65 is formed at a position corresponding to the outlet 62 (pipe 64) at the top of the chamber 6.
- the tip (lower end) of the projection 65 is located above the upper end (exit 62) of the wall 63 in the configuration shown in the drawing.
- the upper end of the protrusion 65 and the upper end of the wall 63 may coincide with each other in the vertical direction.
- the dimensions of the wall 63 and the projection 65 are not particularly limited, but the length L from the upper end (exit 62) of the wall 63 to the tip (lower end) of the projection 65 is about ⁇ 10 to 10 mm. Preferably, it is about -5 to 1 mm.
- the sign “ ⁇ ” of the length L means that the tip of the protrusion 65 is located below the upper end of the wall 63, and “+” means that the tip of the protrusion 65 is on the wall 63. It means to be located above the upper end.
- a plurality of nozzles (first nozzles) 71 for ejecting air (gas) sent from a high-pressure air generator 4 (described later) into the chamber 6 are installed on the side (side) of the chamber 6. Yes.
- Each nozzle 71 is arranged along the circumferential direction of the chamber 6.
- the interval (angular interval) between two adjacent nozzles 71 may be equal or different, but is preferably set equal.
- the nozzle 71 is installed so as to be inclined with respect to the direction of the radius of the chamber 6 (radius passing through the tip of the nozzle 71) in plan view.
- the number of nozzles 71 is not particularly limited, but is preferably about 5 to 8.
- the nozzles 71 and the high-pressure air generator 4 constitute a main part of a swirling flow generating means for generating a swirling flow of air (gas) in the chamber 6.
- a nozzle (second nozzle) 72 for ejecting (introducing) the first composition into the chamber 6 by air sent from the high-pressure air generator 4 is installed on the side of the chamber 6. Yes. Since the nozzle 72 is installed on the side of the chamber 6, the first composition ejected from the nozzle 72 into the chamber 6 can instantaneously take the swirl flow of air and start swirling. .
- the position of the nozzle 72 on the side of the chamber 6 is not particularly limited, but in the illustrated configuration, it is disposed between two adjacent nozzles 71.
- the position of the nozzle 72 in the vertical direction may be the same as or different from the nozzle 71, but is preferably the same.
- the nozzle 72 is installed so as to be inclined with respect to the direction of the radius of the chamber 6 (radius passing through the tip of the nozzle 72) in plan view.
- all the nozzles including the nozzles 71 and the nozzles 72 can be arranged at equal intervals (equal angular intervals).
- the interval between the two nozzles 71 located next to the nozzle 72 is twice the interval between the other two adjacent nozzles 71.
- it can also be set as the structure by which each nozzle 71 is installed at equal intervals (equal angular interval), and the nozzle 72 is arrange
- the nozzles 71 are installed at equal intervals (equal angular intervals), and the nozzles 72 are arranged at an intermediate position between two adjacent nozzles 71.
- a cylindrical supply part (supply means) 73 that communicates with the nozzle 72 and supplies the first composition is installed.
- the upper end portion (upper end portion) of the supply unit 73 has a tapered shape in which the inner diameter gradually increases from the lower side toward the upper side.
- the opening (upper end opening) at the upper end of the supply unit 73 constitutes a supply port, and is disposed at a position shifted from the center of the swirling flow of air in the chamber 6.
- the first composition supplied from the supply unit 73 is supplied from the nozzle 72 into the chamber 6.
- the reservoir 5 has an air vent 51 that discharges air (gas) in the reservoir 5.
- the air vent 51 is provided in the upper portion of the reservoir 5 in the illustrated configuration.
- the air vent 51 is provided with a filter that allows air (gas) to pass therethrough and does not allow the first composition to pass.
- a filter cloth or the like can be used as the filter.
- the high-pressure air generator 4 is connected to the cooling device 3 via a pipe 81, and the cooling device 3 is connected to each nozzle 71 and nozzle 72 of the pulverizing unit 2 via a pipe 82 that branches into a plurality on the way. Has been.
- the high-pressure air generator 4 is a device that compresses air (gas) and delivers high-pressure air (compressed air).
- the high-pressure air generator 4 is configured to adjust the flow rate and pressure of the delivered air.
- the high-pressure air generator 4 has a function of drying the air to be sent out and reducing its humidity, and is configured to adjust the humidity of the air to be sent out.
- the high-pressure air generator 4 dries the air before being ejected from the nozzles 71 and 72 (before being supplied into the chamber 6). Therefore, the high-pressure air generator 4 has functions of pressure adjusting means and humidity adjusting means.
- the cooling device 3 is a device that cools the air sent from the high-pressure air generating device 4 before it is ejected from the nozzles 71 and 72 (before being supplied into the chamber 6), and the temperature of the air can be adjusted. It is configured as follows. Therefore, the cooling device 3 has a function of temperature adjusting means.
- the cooling device 3 for example, a water-cooled liquid refrigerant type device, a gas refrigerant type device, or the like can be used.
- a predetermined material of the raw materials is pulverized (fine pulverized) by the pulverizer 1 so as to have a predetermined particle size distribution.
- the raw material to be crushed include raw materials other than fillers such as a curable resin and a curing accelerator. That is, the pulverization apparatus 1 further finely pulverizes the first composition (resin composition) containing a plurality of powder materials such as a curable resin (which may include a curing agent) and a curing accelerator, A first composition with a particle size distribution is obtained.
- the first composition contains a filler. Since the filler itself has a fine particle size, it is not necessary to finely pulverize in this step. However, when the filler is included, when the first composition is pulverized by the pulverizer 1, the chamber 6 It can suppress that a 1st composition adheres to the inner surface of.
- the content of the filler in the first composition is preferably about 50 to 80 wt%, and more preferably about 60 to 80 wt%. Thereby, it is possible to make the first composition more difficult to adhere to the inner surface of the chamber 6.
- a / b is 0.4 to 1. It is preferably about 5 and more preferably about 0.6 to 1.2.
- the pressure of air supplied into the chamber 6 is preferably set to 0.3 MPa or more, and more preferably set to about 0.5 to 0.8 MPa.
- the pressure is less than the lower limit, the pulverization ability becomes insufficient, the first composition cannot be finely pulverized, and the target particle size distribution cannot be obtained. It becomes difficult to uniformly disperse each powder material in the resin composition.
- the pressure is too large, depending on the structure of the air vent 51, problems such as an increase in the internal pressure in the reservoir 5 and a decrease in the pulverizing ability occur.
- the amount of air supplied into the chamber 6 is preferably set to 1 Nm 3 / min (0 ° C., 1 atm) or more, and more preferably set to about 3 to 5 Nm 3 / min.
- the pulverization ability becomes insufficient, the first composition cannot be finely pulverized, and the target A particle size distribution cannot be obtained, which makes it difficult to uniformly disperse each powder material in the resin composition in the mixing step.
- the flow rate is too large, depending on the structure of the air vent 51, problems such as an increase in the internal pressure of the reservoir 5 and a decrease in the pulverization ability occur.
- the temperature of the air supplied into the chamber 6 is set to 20 ° C. or lower, preferably 15 ° C. or lower, more preferably set to about 0 to 5 ° C.
- the first composition adheres to the inner surface of the chamber 6 during pulverization, thereby reducing the yield.
- the temperature is too low, characteristic deterioration due to condensation or moisture absorption occurs.
- the humidity of the air supplied into the chamber 6 is set to 40 RH or less and about 0 to 15% RH.
- the first composition absorbs moisture during pulverization, and the properties such as curability of the resin composition are lowered, and the moldability is deteriorated.
- the flow rate and humidity of the swirling flow of air can be adjusted (set) to the target values in the high-pressure air generator 4, respectively, and the temperature of the air can be adjusted to the target value in the cooling device 3. It can be adjusted (set).
- the high pressure air generator 4 and the cooling device 3 are operated to supply the first composition from the supply unit 73.
- Compressed high-pressure air (compressed air) is sent from the high-pressure air generator 4, and the air is cooled by the cooling device 3 and ejected from the nozzles 71 and 72 into the chamber 6. As a result, a swirling flow of air is generated in the chamber 6.
- the supplied first composition is ejected (introduced) into the chamber 6 from the nozzle 72 by the air sent from the high-pressure air generator 4, and swirled by the swirling flow in the chamber 6, It is pulverized by collision with each other. Then, as the mass (particle diameter) decreases, each particle gathers toward the center of the chamber 6, gets over the wall 63, is discharged from the outlet 62, passes through the pipe 64, and is stored in the reservoir 5. Transferred to and stored.
- the first composition is finely pulverized and classified.
- the particle size distribution of the first composition is preferably such that the particle size of 250 ⁇ m or more is 1 wt% or less, the particle size of 150 ⁇ m or more, less than 250 ⁇ m is 9 wt% or less, and the particle size of less than 150 ⁇ m is 90 wt% or more. More preferably, 250 ⁇ m or more is 0.5 wt% or less, a particle size of 150 ⁇ m or more, less than 250 ⁇ m is 4 wt% or less, and a particle size of less than 150 ⁇ m is 95 wt% or more.
- each powder material in a resin composition can be uniformly disperse
- a 1st composition it is preferable to mix a 1st composition with a mixing apparatus prior to this fine grinding process.
- a mixing apparatus for example, a high-speed mixing apparatus having a rotating blade, a drum mixer, or the like can be used.
- this pulverization apparatus 1 is an airflow type, it is possible to prevent (or suppress) metal foreign matters (metal foreign matters) from being mixed into the resin composition in the fine pulverization step.
- metal foreign matters metal foreign matters
- the resin produced is prevented from being deteriorated in characteristics (for example, curability) due to moisture absorption of the first composition during pulverization.
- the moldability of the composition can be improved.
- the first composition can be pulverized relatively finely, and thereby the resin composition can be easily and reliably obtained in the mixing step.
- Each powder material in the product can be uniformly dispersed.
- Example 1 Production of First Composition Using the pulverization apparatus 1 shown in FIG. 2 described above, the mixed resin composition was pulverized under the following conditions. Pressure of air supplied into the chamber: 0.7 MPa Temperature of air supplied into the chamber: 3 ° C Humidity of the air supplied into the chamber: 9% RH
- Example 2 A resin composition was obtained in the same manner as in Example 1 except that the production conditions of the first composition were changed as follows. Pressure of air supplied into the chamber: 0.4 MPa Temperature of air supplied into the chamber: 3 ° C Humidity of the air supplied into the chamber: 9% RH
- Example 3 A resin composition was obtained in the same manner as in Example 1 except that the production conditions of the first composition were changed as follows. Pressure of air supplied into the chamber: 0.7 MPa Temperature of air supplied into the chamber: 17 ° C Humidity of the air supplied into the chamber: 9% RH
- Example 4 A resin composition was obtained in the same manner as in Example 1 except that the production conditions of the first composition were changed as follows. Pressure of air supplied into the chamber: 0.7 MPa Temperature of air supplied into the chamber: 3 ° C Humidity of the air supplied into the chamber: 24% RH
- Example 5 A resin composition was obtained in the same manner as in Example 1 except that the production conditions of the first composition were changed as follows. Pressure of air supplied into the chamber: 0.4 MPa Temperature of air supplied into the chamber: 17 ° C Humidity of the air supplied into the chamber: 24% RH
- yield The weight of the first composition before and after pulverization of the first composition by the pulverizer was measured to determine the yield.
- the semiconductor encapsulating resin composition is kneaded with a spatula from fully melted on a hot plate at 175 ° C. until fully cured, and the time from complete melting to complete curing (gel time) is cured. Used as an index of sex.
- Comparative Example 1 has a poor particle size distribution
- Comparative Example 2 has a poor yield
- Comparative Example 3 has a poor curability
- Comparative Example 4 has a particle size distribution, yield, and curability. Bad results were obtained.
- the composition is pulverized using an airflow type pulverizer, it is possible to prevent the metal foreign matter (metal foreign matter) from being mixed into the composition, and the manufactured When the semiconductor element is sealed with the resin composition, occurrence of short circuit or the like can be prevented.
- the composition can be pulverized relatively finely, which makes it easy and easy in the mixing step of mixing the resin composition as a subsequent step. It is possible to uniformly disperse each powder material in the resin composition. Therefore, it has industrial applicability.
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Abstract
Description
気流式の粉砕装置を用い、該粉砕装置のチャンバ内において、気体の旋回流により、硬化性樹脂の粉末材料および無機充填材の粉末材料を含む組成物を旋回させ、該組成物を粉砕する粉砕工程を有し、
前記粉砕工程において、
前記チャンバ内に供給する前記気体の圧力0.3MPa以上、
前記チャンバ内に供給する前記気体の温度を20℃以下、
前記チャンバ内に供給する前記気体の湿度を40%RH以下、
とすることを特徴とする半導体封止用樹脂組成物の製造方法である。
前記硬化性樹脂は、エポキシ樹脂およびフェノール樹脂系硬化剤を含むのが好ましい。
前記組成物を供給する供給手段と、
チャンバと、
前記チャンバ内に気体の旋回流を生じさせる旋回流生成手段と、
前記チャンバ内に供給する前記気体の圧力を調整する圧力調整手段と、
前記チャンバ内に供給する前記気体の温度を調整する温度調整手段と、
前記チャンバ内に供給する前記気体の湿度を調整する湿度調整手段とを有し、
前記チャンバ内に供給する前記気体の圧力を0.3MPa以上、前記チャンバ内に供給する前記気体の温度を20℃以下、前記チャンバ内に供給する前記気体の湿度を40%RH以下に設定し、前記チャンバ内において、気体の旋回流を生じさせ、前記組成物を旋回させ、該組成物を粉砕するよう構成されていることを特徴とする粉砕装置である。
粉砕された前記組成物は、前記壁部を乗り越えて、前記出口から排出されるよう構成されているのが好ましい。
原材料は、硬化性樹脂と、充填材(無機充填材)(無機粒子)とを有し、さらに必要に応じて、硬化促進剤と、カップリング剤等とを有している。硬化性樹脂としては、例えば、エポキシ樹脂等が挙げられ、硬化剤としてフェノールアラルキル型、トリフェノールメタン型、多芳香族環型等のフェノール樹脂系硬化剤を用いたエポキシ樹脂を用いることが好ましい。
充填材(無機充填材)としては、例えば、溶融シリカ(破砕状、球状)、結晶シリカ、アルミナ等が挙げられる。
カップリング剤としては、例えば、シラン化合物等が挙げられる。
図1に示すように、原材料のうちの所定の材料については、まず、粉砕装置1により、所定の粒度分布となるように粉砕(微粉砕)する。この粉砕する原材料としては、例えば、硬化性樹脂(硬化剤を含んでもよい)、硬化促進剤等の充填材以外の原材料であるが、粉砕装置1の壁面へ被粉砕物が付着するのを抑えるため、充填材の一部を加えている。これにより、硬化性樹脂、充填材、硬化促進剤等の複数種の粉末材料を含む第1の組成物が得られる。なお、粉砕装置1については、後に詳述する。
原材料のうちの所定の材料、例えば、充填材の一部(残部)については、表面処理を施すことができる。この表面処理としては、例えば、充填材の表面にカップリング剤等を付着させる。これにより、充填材の粉末材料を含む第2の組成物が得られる。なお、前記微粉砕と表面処理とは、同時に行ってもよく、また、いずれか一方を先に行ってもよい。
次に、混合装置により、前記微粉砕工程で得られた第1の組成物および前記表面処理工程で得られた第2の組成物、すなわち、比重の異なる複数種の粉末材料を含む樹脂組成物(組成物)を完全に混合する。この混合装置としては、例えば、回転羽根を有する高速混合装置等を用いることができる。
次に、混練装置により、前記混合された樹脂組成物を混練する。この混練装置としては、例えば、1軸型混練押出機、2軸型混練押出機等の押出混練機や、ミキシングロール等のロール式混練機を用いることができる。
次に、脱気装置により、前記混練された樹脂組成物に対し脱気を行う。
次に、シート化装置により、前記脱気した塊状の樹脂組成物をシート状に成形し、シート状の樹脂組成物を得る。このシート化装置としては、例えば、シーティングロール等を用いることができる。
次に、冷却装置により、前記シート状の樹脂組成物を冷却する。これにより、樹脂組成物の粉砕を容易かつ確実に行うことができる。
次に、粉砕装置により、シート状の樹脂組成物を所定の粒度分布となるように粉砕し、粉末状の樹脂組成物を得る。この粉砕装置としては、例えば、ハンマーミル、石臼式磨砕機、ロールクラッシャー等を用いることができる。
次に、成形体製造装置(打錠装置)により、前記粉末状の樹脂組成物を圧縮成形し、成形体である樹脂組成物を得ることができる。
図2~図4に示すように、粉砕装置1は、気流により、複数種の粉末材料を含む樹脂組成物(組成物)を粉砕する気流式の粉砕装置であり、第1の組成物(樹脂組成物)を粉砕する粉砕部2と、冷却装置3と、高圧空気発生装置4と、粉砕された第1の組成物を貯留する貯留部5とを備えている。
(微粉砕工程)
この微粉砕(粉砕)工程では、原材料のうちの所定の材料について、粉砕装置1により、所定の粒度分布となるように粉砕(微粉砕)する。この粉砕する原材料としては、例えば、硬化性樹脂、硬化促進剤等の充填材以外の原材料である。すなわち、粉砕装置1により、硬化性樹脂(硬化剤を含んでもよい)、硬化促進剤等の複数種の粉末材料を含む第1の組成物(樹脂組成物)をさらに微細に粉砕し、所定の粒度分布の第1の組成物を得る。ここで、第1の組成物には、上記以外に充填材を含む。充填材自体は粒度の細かいものが市販されているため、本工程において微粉砕する必要はないが、充填材を含むことにより、粉砕装置1によりその第1の組成物を粉砕する際、チャンバ6の内面に第1の組成物が付着することを抑制することができる。
<原材料>
<第1の組成物の原材料>
ビフェニール型エポキシ樹脂:7.9重量部
(油化シェルエポキシ(株)製YX4000H、融点105℃、エポキシ当量195)
フェノールアラルキル樹脂:6.6重量部
(三井化学(株)製XLC-3L、150℃の溶融粘度2.0ポイズ、水酸基当量172)
臭素化フェノールノボラック型エポキシ樹脂:1.0重量部
(軟化点85℃、エポキシ当量280)
1、8-ジアザビシクロ(5、4、0)ウンデセン-7:0.2重量部
溶融シリカ:21.0重量部
カルナバワックス:0.5重量部
カーボンブラック:0.3重量部
溶融シリカ(平均粒径16μm):63.0重量部
エポキシシランカップリング剤:0.5重量部
[1]第1の組成物の製造
前述した図2に示す粉砕装置1を用い、下記の条件で、前記混合した樹脂組成物を粉砕した。
チャンバ内に供給する空気の圧力:0.7MPa
チャンバ内に供給する空気の温度:3℃
チャンバ内に供給する空気の湿度:9%RH
リボンブレンダーを用い、溶融シリカの表面にエポキシシランカップリング剤を付着させ、第2の組成物を得た。
次に、第1の組成物および第2の組成物をヘンシェルミキサーにより混合したのち、2軸型混練押出機により溶融混練し、さらに脱気、冷却後、粉砕機で粉砕して、半導体封止用樹脂組成物を得た。
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.4MPa
チャンバ内に供給する空気の温度:3℃
チャンバ内に供給する空気の湿度:9%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.7MPa
チャンバ内に供給する空気の温度:17℃
チャンバ内に供給する空気の湿度:9%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.7MPa
チャンバ内に供給する空気の温度:3℃
チャンバ内に供給する空気の湿度:24%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.4MPa
チャンバ内に供給する空気の温度:17℃
チャンバ内に供給する空気の湿度:24%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.2MPa
チャンバ内に供給する空気の温度:3℃
チャンバ内に供給する空気の湿度:9%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.7MPa
チャンバ内に供給する空気の温度:25℃
チャンバ内に供給する空気の湿度:9%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.7MPa
チャンバ内に供給する空気の温度:3℃
チャンバ内に供給する空気の湿度:45%RH
第1の組成物の製造条件を下記のように変更した以外は、前記実施例1と同様にして樹脂組成物を得た。
チャンバ内に供給する空気の圧力:0.2MPa
チャンバ内に供給する空気の温度:25℃
チャンバ内に供給する空気の湿度:45%RH
実施例1~5、比較例1~4に対し、それぞれ、下記のようにして樹脂組成物の各評価を行った。その結果は、下記表1に示す通りである。
第1の組成物について、測定器(ホソカワミクロン(株)製パウダーテスター、振幅1mm、振動数3000VPM、時間60秒、使用篩の目開き:250μmと150μmの2種類、サンプル量:6g/回)を用いて、樹脂組成物の粒度分布を求めた。
粉砕装置による第1の組成物の粉砕の前後における第1の組成物の重量をそれぞれ測定し、収率を求めた。
半導体封止用樹脂組成物を、175℃の熱盤上にて完全溶融してから完全硬化するまでヘラで混練する作業を行い、完全溶融から完全硬化するまでの時間(ゲル化時間)を硬化性の指標として用いた。
Claims (15)
- 半導体封止用樹脂組成物の製造方法であって、
気流式の粉砕装置を用い、該粉砕装置のチャンバ内において、気体の旋回流により、硬化性樹脂の粉末材料および無機充填材の粉末材料を含む組成物を旋回させ、該組成物を粉砕する粉砕工程を有し、
前記粉砕工程において、
前記チャンバ内に供給する前記気体の圧力0.3MPa以上、
前記チャンバ内に供給する前記気体の温度を20℃以下、
前記チャンバ内に供給する前記気体の湿度を40%RH以下、
とすることを特徴とする半導体封止用樹脂組成物の製造方法。 - 前記組成物は、硬化促進剤を含み、
前記硬化性樹脂は、エポキシ樹脂およびフェノール樹脂系硬化剤を含む請求項1に記載の半導体封止用樹脂組成物の製造方法。 - 前記粉砕工程で粉砕される前記組成物中の前記無機充填材の含有率は、50~80wt%である請求項1または2に記載の半導体封止用樹脂組成物の製造方法。
- 前記粉砕工程に先立って、前記組成物を混合する請求項1ないし3のいずれかに記載の半導体封止用樹脂組成物の製造方法。
- 前記チャンバ内に気体を供給することにより、前記気体の旋回流を生じさせ、前記チャンバ内に供給する前記気体の量を1Nm3/分以上とする請求項1ないし4のいずれかに記載の半導体封止用樹脂組成物の製造方法。
- 前記チャンバの内径の平均値は、10~50cmである請求項1ないし5のいずれかに記載の半導体封止用樹脂組成物の製造方法。
- 前記粉砕工程を行うことにより、前記組成物の粒度分布を、粒径250μm以上が1wt%以下、粒径150μm以上、250μm未満が9wt%以下、粒径150μm未満が90wt%以上とする請求項1ないし6のいずれかに記載の半導体封止用樹脂組成物の製造方法。
- 気流により、硬化性樹脂の粉末材料および無機充填材の粉末材料を含む組成物を旋回させ、該組成物を粉砕する気流式の粉砕装置であって、
前記組成物を供給する供給手段と、
チャンバと、
前記チャンバ内に気体の旋回流を生じさせる旋回流生成手段と、
前記チャンバ内に供給する前記気体の圧力を調整する圧力調整手段と、
前記チャンバ内に供給する前記気体の温度を調整する温度調整手段と、
前記チャンバ内に供給する前記気体の湿度を調整する湿度調整手段とを有し、
前記チャンバ内に供給する前記気体の圧力を0.3MPa以上、前記チャンバ内に供給する前記気体の温度を20℃以下、前記チャンバ内に供給する前記気体の湿度を40%RH以下に設定し、前記チャンバ内において、気体の旋回流を生じさせ、前記組成物を旋回させ、該組成物を粉砕するよう構成されていることを特徴とする粉砕装置。 - 前記旋回流生成手段は、前記チャンバの周方向に沿って配置され、前記チャンバ内に前記気体を噴出する複数のノズルを有する請求項8に記載の粉砕装置。
- 前記圧力調整手段は、前記気体が前記チャンバ内に供給される前に該気体を圧縮する装置である請求項8または9に記載の粉砕装置。
- 前記温度調整手段は、前記気体が前記チャンバ内に供給される前に該気体を冷却する装置である請求項8ないし10のいずれかに記載の粉砕装置。
- 前記湿度調整手段は、前記気体が前記チャンバ内に供給される前に該気体を乾燥させる装置である請求項8ないし11のいずれかに記載の粉砕装置。
- 前記チャンバの底部に、粉砕された前記組成物が排出される出口と、該出口の周囲を囲う壁部とが設けられており、
粉砕された前記組成物は、前記壁部を乗り越えて、前記出口から排出されるよう構成されている請求項8ないし12のいずれかに記載の粉砕装置。 - 前記供給手段は、前記チャンバ内に前記組成物を供給する供給口を有する請求項8ないし13のいずれかに記載の粉砕装置。
- 前記供給口は、前記気体の旋回流の中心からずれた位置に設けられている請求項14に記載の粉砕装置。
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JP2019196462A (ja) * | 2018-05-11 | 2019-11-14 | 住友ベークライト株式会社 | 封止用エポキシ樹脂組成物の構成成分として用いられる粒子の製造方法、封止用エポキシ樹脂組成物の構成成分として用いられるコアシェル粒子、および、封止用エポキシ樹脂組成物 |
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CN102791451A (zh) | 2012-11-21 |
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JP5691219B2 (ja) | 2015-04-01 |
TWI551352B (zh) | 2016-10-01 |
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US20130012624A1 (en) | 2013-01-10 |
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