WO2011122182A1 - Module anti-fusible - Google Patents

Module anti-fusible Download PDF

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Publication number
WO2011122182A1
WO2011122182A1 PCT/JP2011/054071 JP2011054071W WO2011122182A1 WO 2011122182 A1 WO2011122182 A1 WO 2011122182A1 JP 2011054071 W JP2011054071 W JP 2011054071W WO 2011122182 A1 WO2011122182 A1 WO 2011122182A1
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WO
WIPO (PCT)
Prior art keywords
antifuse
layer
voltage
antifuse element
electrostatic protection
Prior art date
Application number
PCT/JP2011/054071
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English (en)
Japanese (ja)
Inventor
俊幸 中磯
竹島　裕
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株式会社村田製作所
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Filing date
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Publication of WO2011122182A1 publication Critical patent/WO2011122182A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to an antifuse module including an antifuse element.
  • a general fuse blows when the voltage exceeds a certain level and cuts off the current.
  • an antifuse element has been proposed in which a short circuit occurs when a voltage exceeds a certain level and current flows.
  • liquid crystal display devices and various lighting devices electronic components such as a number of light emitting diodes (LEDs) are mounted as light emitting sources.
  • the antifuse element is used in a circuit in which a large number of these electronic components are connected in series and electrically connected to each electronic component in parallel.
  • This antifuse element is in an insulated state when the electronic component is operating normally. When a specific electronic component is disconnected due to its life or the like and an open failure occurs, the antifuse element is short-circuited and becomes conductive. And it can avoid that other electronic components stop operation
  • Patent Document 1 discloses an antifuse element as shown in FIG.
  • the antifuse element 100 of FIG. 5 includes a substrate 111, an adhesion layer 112, a lower electrode layer 121, an insulating layer 122, an upper electrode layer 123, a first inorganic protective layer 131, and a second inorganic protective layer.
  • 132, a first organic protective layer 133, a second organic protective layer 134, extraction electrodes 141 and 142, and mounting electrodes 143 and 144 are provided.
  • the mounting electrode 143 is electrically connected to the lower electrode layer 121 through the extraction electrode 141.
  • the mounting electrode 144 is electrically connected to the upper electrode layer 123 through the extraction electrode 142.
  • the mounting electrodes 143 and 144 are provided for mounting on a circuit board such as a printed board.
  • a voltage is applied between the mounting electrodes 143 and 144.
  • the insulating layer 122 breaks down. Then, due to the dielectric breakdown of the insulating layer 122, the lower electrode layer 121 and the upper electrode layer 123 are short-circuited and become conductive.
  • the mounting electrode of the antifuse element When mounting an antifuse element having a mounting electrode as in Patent Document 1 on a circuit board, for example, the mounting electrode of the antifuse element is installed on a land on the circuit board side. Then, the mounting electrode is fixed with solder or the like. At that time, if the circuit board has static electricity, the antifuse element may break down when the antifuse element comes into contact with the land of the circuit board.
  • the present invention has been made in view of the above problems, and an object thereof is to provide an antifuse module in which an antifuse element does not break down during mounting.
  • An antifuse module includes an insulating layer, a pair of electrode layers formed on the upper and lower surfaces of the insulating layer, and a mounting electrode electrically connected to each of the electrode layers. And an electrostatic protection element connected in parallel with the antifuse element.
  • the antifuse element and the electrostatic protection element are connected in parallel. Therefore, it is possible to prevent dielectric breakdown of the antifuse element due to static electricity during mounting.
  • the electrostatic protection element is a capacitor, and a dielectric breakdown voltage of the capacitor is larger than a breakdown voltage of the antifuse element due to static electricity.
  • the antifuse element will not malfunction when static electricity occurs.
  • the capacitor has a capacitance of 0.1 ⁇ F or more.
  • the applied voltage 4 kV in the human body model can be reduced to about 15 V.
  • the electrostatic protection element is a Zener diode
  • the Zener voltage of the Zener diode is larger than the operating voltage of the antifuse element, and is higher than the breakdown voltage of the antifuse element due to static electricity. Small is preferable.
  • the electrostatic protection element is a varistor
  • a varistor voltage of the varistor is larger than an operating voltage of the antifuse element and smaller than a breakdown voltage due to static electricity of the antifuse element. Is preferred.
  • the pair of electrode layers of the antifuse element is made of metal or an alloy thereof, and a capacitance between the pair of electrode layers is 15 nF or less, and the pair of electrode layers When a voltage equal to or higher than the operating voltage is applied for a certain period of time, the pair of electrode layers are preferably melted and short-circuited to become conductive.
  • the material of the insulating layer is (Ba, Sr) TiO 3
  • the material of the pair of electrode layers is gold, silver, platinum, palladium, rhodium, iridium, ruthenium, osmium. It is preferably a metal composed of at least one element selected from the group consisting of or an alloy thereof.
  • the material of the insulating layer is (Ba, Sr) TiO 3
  • the dielectric constant is about 400, and the design of the thickness and area of the insulating layer for obtaining desired characteristics becomes easy.
  • the material of the pair of electrode layers is a metal composed of at least one element selected from the group consisting of gold, silver, platinum, palladium, rhodium, iridium, ruthenium, and osmium or an alloy thereof, the pair of electrodes is Even when a current is passed for a long time after a short circuit, it is possible to prevent problems such as ball formation due to oxidation.
  • an antifuse element and an electrostatic protection element are connected in parallel. Therefore, for example, even when static electricity is generated during mounting and a high voltage is applied instantaneously, the voltage applied to the antifuse element can be further reduced. For this reason, it is possible to prevent dielectric breakdown of the antifuse element due to static electricity during mounting.
  • FIG. 1 is a cross-sectional view of an antifuse element 10 used in an antifuse module according to the present invention.
  • the antifuse element 10 is formed on the substrate 11 using, for example, a thin film formation process.
  • Examples of the material of the substrate 11 include a Si single crystal substrate.
  • an adhesion layer 12 On the substrate 11, an adhesion layer 12, a lower electrode layer 21, an insulating layer 22, an upper electrode layer 23, and a first inorganic protective film 31 are sequentially laminated.
  • the lower electrode layer 21 and the upper electrode layer 23 are formed on the upper and lower surfaces of the insulating layer 22.
  • the adhesion layer 12 is formed in order to achieve adhesion between the substrate 11 and the lower electrode layer 21.
  • the same material as that of the insulating layer 22 is used for the adhesion layer 12, there is an advantage that the manufacturing is simplified.
  • a metal material is used for the lower electrode layer 21 and the upper electrode layer 23.
  • a current flows through the antifuse element 10 for a long time after the short circuit.
  • a noble metal for the lower electrode layer 21 and the upper electrode layer 23 in order to prevent problems such as a resistance increase due to oxidation.
  • gold, silver, platinum, palladium, rhodium, iridium, ruthenium, or osmium is used alone or in an alloy.
  • the insulating layer 22 exhibits a property such that when a constant voltage equal to or higher than the operating voltage is applied between the lower electrode layer 21 and the upper electrode layer 23, the dielectric layer breaks down and short-circuits the lower electrode layer 21 and the upper electrode layer 23. Things are good.
  • the material of the insulating layer 22 includes, for example, (Ba, Sr) TiO 3 . Further, as the material of the insulating layer 22, it is possible to use SiO 2 , SiN x , Al 2 O 3 , or TiO 2 . These materials are cheaper than (Ba, Sr) TiO 3 and have high moisture resistance in an insulating state. Therefore, the first inorganic protective layer 31 and the second inorganic protective layer 32 described later can be omitted, and low-cost production is possible.
  • low resistance Si in the Si substrate may be used as the lower electrode layer 21 and a SiO 2 oxide layer on the Si substrate may be used as the insulating layer 22.
  • a material that can make ohmic contact with the Si substrate may be used for the upper electrode layer 23.
  • an Au / Sb layer or an Al layer is preferable for an n-type Si substrate.
  • the first inorganic protective layer 31 is formed in order to reduce the leakage current.
  • the same material as that of the insulating layer 22 is used for the first inorganic protective layer 31, there is an advantage that the manufacturing is simplified.
  • the adhesion layer 12, the lower electrode layer 21, the insulating layer 22, the upper electrode layer 23, and the first inorganic protective layer 31 are covered with a second inorganic protective layer 32 and a first organic protective layer 33.
  • the second inorganic protective layer 32 and the first organic protective layer 33 are formed to prevent moisture from entering.
  • Examples of the material of the second inorganic protective layer 32 include SiN x , SiO 2 , Al 2 O 3 , and TiO 2 .
  • a polyimide resin and an epoxy resin are mentioned, for example.
  • the extraction electrodes 41 and 42 are formed on the first organic protective layer 33.
  • the extraction electrodes 41 and 42 are formed so as to penetrate the second inorganic protective layer 32 and the first organic protective layer 33.
  • the second organic protective layer 34 is formed so as to cover the second inorganic protective layer 32 and the first organic protective layer 33. Even when the first inorganic protective layer 33 and the second inorganic protective layer 32 are peeled off due to the dielectric breakdown of the insulating layer 22, for example, the sealing is performed by the second organic protective layer 34. Can do.
  • the material of the second organic protective layer 34 is, for example, a polyimide resin or an epoxy resin, like the first organic protective layer 33.
  • the second organic protective layer 34 is formed so that the mounting electrodes 43 and 44 are exposed on the surface of the antifuse element 10.
  • the mounting electrode 43 is electrically connected to the lower electrode layer 21 through the extraction electrode 41.
  • the mounting electrode 44 is electrically connected to the upper electrode layer 23 through the extraction electrode 42.
  • an oxide layer may be formed on the surface of the substrate 11 for the purpose of suppressing mutual diffusion with the adhesion layer 12.
  • the oxide layer is formed, for example, by heat treating the substrate 11.
  • the operating principle of the antifuse element 10 is as follows.
  • the mounting electrodes 43 and 44 of the antifuse element 10 are electrically connected in parallel with each electronic component in a circuit in which a large number of electronic components such as LEDs are connected in series.
  • the antifuse element 10 is in an insulated state when the electronic component is performing a normal operation.
  • a voltage is applied between the mounting electrodes 43 and 44.
  • the insulating layer 22 breaks down.
  • the lower electrode layer 21 and the upper electrode layer 23 are short-circuited and become conductive.
  • the antifuse element 10 becomes conductive due to dielectric breakdown of the insulating layer 22.
  • the voltage application time differs between the voltage applied when the electronic component has an open failure and the instantaneous high voltage due to static electricity. Therefore, the breakdown voltage due to static electricity of the antifuse element 10 is generally larger than the operating voltage of the antifuse element 10.
  • the breakdown voltage due to static electricity of the anti-fuse element 10 having an operating voltage of 20V is 25V.
  • the antifuse module according to the present invention is manufactured, for example, by the following process.
  • 2 to 4 are views showing a manufacturing process of the antifuse module according to the present invention.
  • 2A to 4A are top views.
  • FIGS. 2 to 4B are bottom views.
  • 2C is a cross-sectional view taken along line AA of FIG. 2A to FIG. 4A.
  • 2D to 4D are cross-sectional views taken along the line BB of FIG. 2A to FIG. 4A.
  • a wiring board 72 is prepared in which connection wirings 61 and 62 and external connection terminals 65 and 66 are patterned on the surface in advance.
  • the through-hole electrode 63 electrically connects the connection wiring 61 and the external connection terminal 65.
  • the through-hole electrode 64 electrically connects the connection wiring 62 and the external connection terminal 66.
  • Examples of the material of the wiring board 72 include a glass epoxy board.
  • copper is mentioned, for example.
  • the antifuse element 10 and the electrostatic protection element 50 are mounted on the connection wirings 61 and 62. Specifically, a solder paste (not shown) is printed on the connection wirings 61 and 62. Then, mounting electrodes (not shown) of the antifuse element 10 and terminals of the electrostatic protection element 50 are installed on the connection wirings 61 and 62 on which the solder paste is printed, and soldering is performed by heating in a reflow furnace. The electrostatic protection element 50 is mounted on the connection wirings 61 and 62 so as to be electrically connected to the antifuse element 10 in parallel.
  • the mounted antifuse element 10 and the electrostatic protection element 50 are covered with a cover layer 71 to obtain the antifuse module 1.
  • the cover layer 71 is provided to physically protect the antifuse element 10 and the electrostatic protection element 50 and to smooth the surface of the antifuse module 1.
  • Examples of the material of the cover layer 71 include a thermosetting resin such as an epoxy resin.
  • the antifuse element 10 and the electrostatic protection element 50 are electrically connected to the external connection terminals 65 and 66.
  • the external connection terminals 65 and 66 are provided on the lower surface of the antifuse module 1.
  • the antifuse module 1 is electrically connected in parallel with electronic components on a circuit board, for example.
  • the external connection terminals 65 and 66 are mounted on the land on the circuit board side with solder or the like.
  • the electrostatic protection element 50 is for protecting the antifuse element 10 when a high voltage is momentarily applied due to static electricity, for example.
  • Examples of the electrostatic protection element 50 include a capacitor, a Zener diode, and a varistor.
  • the electrostatic protection element 50 is a capacitor
  • the instantaneous high voltage peak applied to the antifuse element 10 can be blunted by the impedance of the capacitor.
  • the larger the capacitance of the capacitor the more prominent the effect of peak blunting.
  • the dielectric breakdown voltage of the capacitor is preferably larger than the breakdown voltage due to static electricity of the antifuse element 10.
  • the capacitor breaks down first when static electricity is applied, and a high voltage is applied to the antifuse element 10. End up. As a result, the antifuse element 10 may also break down.
  • the electrostatic protection element 50 may be a Zener diode. Even if a high voltage is momentarily applied to the antifuse module 1 due to static electricity, a large current flows through the Zener diode. This is because a voltage value higher than the Zener voltage is not applied to the antifuse element 10.
  • the Zener voltage of the Zener diode is preferably larger than the operating voltage of the antifuse element 10 and smaller than the breakdown voltage of the antifuse element 10 due to static electricity.
  • the Zener voltage is equal to or higher than the breakdown voltage due to static electricity of the antifuse element 10
  • the Zener voltage breaks down at the voltage value of the Zener voltage.
  • the Zener voltage is equal to or lower than the operating voltage of the anti-fuse element 10
  • an electronic component such as a light emitting diode connected in parallel with the anti-fuse module 1 causes an open defect after mounting described later, This is because the antifuse element 10 is not short-circuited.
  • the electrostatic protection element 50 may be a varistor. Even if a high voltage is momentarily applied to the antifuse module 1 due to static electricity, a large current flows through the varistor. This is because a voltage value higher than the varistor voltage is not applied to the antifuse element 10.
  • the varistor voltage of the varistor is larger than the operating voltage of the antifuse element 10 and smaller than the breakdown voltage of the antifuse element 10 due to static electricity.
  • the varistor voltage is equal to or higher than the breakdown voltage due to static electricity of the antifuse element 10
  • the antifuse element 10 breaks down at the voltage value of the varistor voltage.
  • the varistor voltage is equal to or lower than the operating voltage of the anti-fuse element 10
  • the anti-fuse element will not be short-circuited when an electronic component causes an open failure after mounting, as with the Zener diode.
  • the antifuse module according to the present invention when the antifuse module according to the present invention is mounted so as to be electrically connected in parallel with each electronic component in a circuit in which a large number of electronic components such as LEDs are connected in series, for example, only at the time of mounting.
  • the presence of the electrostatic protection element can prevent the dielectric breakdown of the anti-fuse element due to a surge voltage or the like in the circuit.
  • after mounting not only the antifuse element but also electronic components such as LEDs can be protected. That is, by using the antifuse module according to the present invention, it is possible to protect electronic components such as antifuse elements and LEDs from a sudden rise in voltage.
  • Si substrate Si single crystal substrate
  • Si oxide layer silicon oxide layer
  • an adhesion layer, a lower electrode layer, an insulating layer, an upper electrode layer, and a first inorganic protective layer were formed.
  • a barium strontium titanate ((Ba, Sr) TiO 3 , hereinafter referred to as “BST”) layer was formed as an adhesion layer by a chemical solution deposition (CSD) method.
  • CSD chemical solution deposition
  • a BST layer having a thickness of 45 nm was formed.
  • a 300 nm-thick platinum (hereinafter referred to as “Pt”) layer was formed on the adhesion layer by a sputtering method.
  • Pt 300 nm-thick platinum
  • a 90 nm thick BST layer was formed as an insulating layer on the Pt layer by the same method as the BST layer described above.
  • a 300-nm-thick Pt layer was formed as an upper electrode layer by the same method as the Pt layer described above.
  • a BST layer having a thickness of 90 nm was formed as a first inorganic protective layer by the same method as the BST layer described above.
  • the first inorganic protective layer, the upper electrode layer, the insulating layer, the lower electrode layer, and the adhesion layer were patterned.
  • the first inorganic protective layer and the upper electrode layer were patterned. That is, a resist was applied on the Pt layer as the upper electrode layer, and a resist pattern was formed by exposure and development. Then, after patterning into a predetermined shape by Ar ion milling, the resist was removed by ashing. After patterning the insulating layer, the lower electrode layer, and the adhesion layer by the same method, the resist was removed. And it heat-processed on 800 degreeC and the conditions for 30 minutes.
  • a second inorganic protective layer was formed so as to cover the upper surface and side surfaces of the exposed first inorganic protective layer, upper electrode layer, insulating layer, lower electrode layer, and adhesion layer.
  • an SiN x layer having a thickness of 300 nm was formed by a sputtering method.
  • the 1st organic protective layer was formed on the 2nd inorganic protective layer.
  • photosensitive polyimide was applied by spin coating, and was heated at 350 ° C. for 1 hour after exposure and development. In this way, a polyimide layer having a thickness of 2 ⁇ m was formed.
  • this first organic protective layer was used as a mask pattern, and the second inorganic protective layer was dry etched using CHF 3 gas. And the upper electrode layer and a part of lower electrode layer were exposed.
  • an extraction electrode was formed. Specifically, a Ti layer (layer thickness: 100 nm) and a Cu layer (layer thickness: 1000 nm) were continuously formed by magnetron sputtering. Thereafter, a resist pattern was formed by sequentially performing resist coating, exposure, and development. Then, using the resist pattern as a mask, the exposed Cu layer and Ti layer were patterned by Ar ion milling. In this way, an extraction electrode was formed.
  • a second organic protective layer was formed so that a part of the extraction electrode was exposed.
  • a polyimide layer having a thickness of 2 ⁇ m was obtained by spin-coating photosensitive polyimide and sequentially performing exposure, development, and curing.
  • a mounting electrode was formed on the exposed portion of the extraction electrode using the second organic protective layer as a solder resist. Specifically, an Ni layer having a thickness of 2 ⁇ m and an Au layer having a thickness of 0.1 ⁇ m were formed by electroless plating in the opening of the resist pattern.
  • the substrate was cut using a dicing saw, and a 0.6 ⁇ 0.3 ⁇ 0.3 mm chip-shaped antifuse element was taken out.
  • the characteristics of the antifuse element manufactured as described above were measured.
  • the resistance before the short circuit was 1 M ⁇ or more, and the resistance after the short circuit was 5 ⁇ or less.
  • the operating voltage at which the antifuse element is short-circuited was 20V.
  • the breakdown voltage due to static electricity was 25V.
  • the effective electrode area was 0.3 mm 2 .
  • the capacitance was 12 nF.
  • an antifuse module was produced using the antifuse element produced as described above.
  • a capacitor was used as the electrostatic protection element.
  • the capacitance of the capacitor was 0.1 ⁇ F.
  • the size of the capacitor was 0.6 ⁇ 0.3 ⁇ 0.3 mm.
  • a wiring board provided with external connection terminals and connection wiring in advance on the surface was prepared.
  • the material of the wiring board was glass epoxy resin, and FR-4 was used.
  • an anti-fuse element and an electrostatic protection element were mounted on the connection wiring. Specifically, first, a solder paste was printed on the connection wiring. And the mounting electrode of the antifuse element and the terminal of the electrostatic protection element were installed on the connection wiring on which the solder paste was printed. And it soldered by heating with a reflow furnace.
  • a cover layer was formed so as to cover the antifuse element and the electrostatic protection element.
  • the material of the cover layer was an epoxy resin. Then, a heat treatment was performed in an oven at 150 ° C. for 60 minutes to cure the cover layer.
  • the antifuse module manufactured as described above was designated as Experimental Example 1. And the antifuse element which has not connected the electrostatic protection element was made into the comparative example 1. The characteristics of the samples of Experimental Example 1 and Comparative Example 1 were compared. Specifically, a withstand voltage test was performed on a machine model and a human body model.
  • the machine model is a model that discharges when a charge charged on a metal device touches a sample, and applies a voltage to the sample in a pulsed manner.
  • the human body model is a model that discharges when a charge charged on the human body touches the sample.
  • the human body model assumes a higher voltage than the machine model.
  • the withstand voltage test was started from 0.2 kV, and when the resistance deterioration of one digit or more was not observed in the sample, the test was repeated by increasing the test voltage by 0.2 kV up to 1.0 kV. After 1.0 kV, tests were performed in the order of 2.0 kV, 4.0 kV, and 8.0 kV.
  • the maximum value of the test voltage at which no single-digit or more resistance deterioration was observed in all measurement samples was taken as the withstand voltage.
  • the maximum value of the test voltage was 8.0 kV.
  • Table 1 shows the results of the withstand voltage test.
  • Example 2 an antifuse element was manufactured using a 50 nm thick SiN x layer as the insulating layer. And the antifuse element was produced by the method similar to Experimental example 1 except having omitted the 1st inorganic protective layer and the 2nd inorganic protective layer. Since the SiN x layer is in an insulating state and has high moisture resistance, the first inorganic protective layer and the second inorganic protective layer can be omitted, and manufacturing at low cost is possible.
  • the SiN x layer was formed by magnetron sputtering. In this case, it is possible to continuously form the lower electrode layer, the insulating layer, and the upper electrode layer as compared with Experimental Example 1, and it is possible to manufacture at a lower cost.
  • the operating voltage of the antifuse element fabricated in Experimental Example 2 was 25V.
  • an antifuse module was produced in the same manner as in Experimental Example 1.
  • the electrostatic protection element the same capacitor as in Experimental Example 1 was used.
  • the antifuse module manufactured as described above was defined as Experimental Example 2.
  • the antifuse element which has not connected the electrostatic protection element was made into the comparative example 2.
  • the antifuse module according to the present invention is not limited to being used by being electrically connected in parallel with each electronic component in a circuit in which a large number of electronic components are connected in series.
  • the antifuse module is electrically connected to the secondary battery and the power supply circuit in parallel.
  • an antifuse element in the antifuse module can be preferentially short-circuited to use the secondary battery and the power supply circuit.

Abstract

L'invention concerne un module anti-fusible dans lequel un élément anti-fusible ne fond pas lorsque le module anti-fusible est monté. Le module anti-fusible est pourvu : de l'élément anti-fusible (10) qui est pourvu d'une couche d'isolation, d'une paire de couches d'électrode formées sur les surfaces inférieure et supérieure de la couche d'isolation et d'une électrode de montage connectée électriquement à chacune des couches d'électrode, et d'un élément de protection électrostatique (50) qui est connecté en parallèle avec l'élément anti-fusible (10).
PCT/JP2011/054071 2010-03-31 2011-02-24 Module anti-fusible WO2011122182A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010082713 2010-03-31
JP2010-082713 2010-03-31

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WO2011122182A1 true WO2011122182A1 (fr) 2011-10-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015001820A1 (fr) * 2013-07-01 2015-01-08 株式会社村田製作所 Procédé de réglage de la fréquence de résonance dans des circuits résonants, et circuit à réactance variable
WO2015060278A1 (fr) * 2013-10-24 2015-04-30 株式会社村田製作所 Circuit de protection composite, élément de protection composite, et élément led pour éclairage

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JP2009267293A (ja) * 2008-04-30 2009-11-12 Murata Mfg Co Ltd アンチヒューズ素子

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JP2006139900A (ja) * 1996-05-28 2006-06-01 Micron Technol Inc 内部発生されたプログラミング電圧を用いてアンチヒューズをプログラムする方法及び装置
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JP2006339312A (ja) * 2005-05-31 2006-12-14 Seiko Npc Corp 半導体装置及び製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015001820A1 (fr) * 2013-07-01 2015-01-08 株式会社村田製作所 Procédé de réglage de la fréquence de résonance dans des circuits résonants, et circuit à réactance variable
WO2015060278A1 (fr) * 2013-10-24 2015-04-30 株式会社村田製作所 Circuit de protection composite, élément de protection composite, et élément led pour éclairage
JP6070858B2 (ja) * 2013-10-24 2017-02-01 株式会社村田製作所 複合保護回路、複合保護素子および照明用ｌｅｄ素子
US10043786B2 (en) 2013-10-24 2018-08-07 Murata Manufacturing Co., Ltd. Composite protection circuit, composite protection element, and LED device for illumination

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