WO2011115097A1 - 内燃機関用点火装置 - Google Patents
内燃機関用点火装置 Download PDFInfo
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- WO2011115097A1 WO2011115097A1 PCT/JP2011/056020 JP2011056020W WO2011115097A1 WO 2011115097 A1 WO2011115097 A1 WO 2011115097A1 JP 2011056020 W JP2011056020 W JP 2011056020W WO 2011115097 A1 WO2011115097 A1 WO 2011115097A1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P3/00—Other installations
- F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
- F02P3/04—Layout of circuits
- F02P3/0407—Opening or closing the primary coil circuit with electronic switching means
- F02P3/0435—Opening or closing the primary coil circuit with electronic switching means with semiconductor devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P15/00—Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 and combined with layout of ignition circuits
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to an ignition device for an internal combustion engine, and more particularly to an ignition device for an internal combustion engine in which a CR circuit is connected to a transistor for energizing / cutting off a primary current of an ignition coil.
- an ignition device for an internal combustion engine including an ignition coil including a primary coil and a secondary coil and a switching element including a transistor for energizing / cutting off a primary current flowing through the primary coil is known.
- the primary current is supplied to the primary coil while the transistor is on, while the primary current is cut off when the transistor is off.
- a high secondary voltage is induced in the secondary coil, and the secondary voltage is applied to the spark plug, thereby generating a discharge spark in the spark plug and igniting the internal combustion engine.
- Japanese Patent Application Laid-Open No. 2004-228688 discloses a drive unit for turning on / off the switching unit in response to the ignition signal and adjusting the voltage applied to the gate of the switching unit in order to prevent unnecessary operation of the power element due to an external surge.
- An internal combustion engine ignition device is disclosed.
- the power transistor has a characteristic that the direct current amplification factor increases with an increase in the base-emitter voltage between the base and the emitter in order to suppress an unnecessary operation at the rising of the ignition signal.
- an internal combustion engine ignition device having a configuration that suppresses a secondary voltage generated at the start of energization of a primary current by suppressing the rise of the primary current.
- the transistor is set so as to be turned off instantaneously, so that the primary current is suddenly cut off correspondingly.
- the spark plug will ignite unnecessarily because the secondary voltage rises sharply and exhibits a large peak value and also exhibits a secondary large peak.
- the present invention has been made after the above-described studies, and an object thereof is to provide an ignition device for an internal combustion engine that can suppress unnecessary ignition.
- the present invention provides a transistor capable of energizing and interrupting a current of a primary coil of an ignition coil, and energization of a gate current flowing from a gate current source to the gate terminal of the transistor.
- a pre-drive circuit that can turn on and off the transistor by controlling the cutoff, and is connected between the gate current source and the gate terminal of the transistor, and the gate current source and the gate terminal of the transistor
- An inhibit circuit that allows the pre-drive circuit to turn on and off the transistor by controlling connection and disconnection between the pre-drive circuit, the inhibit circuit, and the gate of the transistor C having a resistance element and a capacitor connected between the terminals
- a circuit is an internal combustion engine ignition apparatus comprising: a.
- the present invention has a second aspect in which the transistor is composed of an IGBT.
- the third aspect of the present invention is that the CR circuit causes a current caused by the electric charge stored in the capacitor to flow to the gate terminal of the IGBT.
- the time constant of the CR circuit is set so as to relatively gently change the voltage applied to the gate terminal of the transistor. This is the fourth aspect.
- the transistor, the pre-drive circuit, the inhibit circuit, and the CR circuit are arranged in the same integrated circuit, and the integrated circuit
- the integrated circuit A fifth aspect is that a circuit and a microcomputer that controls the operation of the pre-drive circuit and the inhibit circuit are arranged in the same package.
- an unnecessary secondary voltage is applied to the ignition coil by the CR circuit connected between the inhibit circuit and the gate terminal of the transistor and having a resistance element and a capacitor. Since generation
- the transistor is composed of an IGBT, the cost can be reduced and a CR circuit in which unnecessary ignition is not generated in the ignition coil. Can be easily set.
- the CR circuit causes a current caused by the electric charge stored in the capacitor of the CR circuit to flow to the gate terminal of the IGBT.
- the time constant of the CR circuit is set so as to relatively gently change the voltage applied to the gate terminal of the IGBT.
- the change of the voltage applied to the gate terminal can be made relatively gentle, and the occurrence of unnecessary ignition in the ignition coil can be more reliably suppressed.
- the transistor, the predrive circuit, the inhibit circuit, and the CR circuit are arranged in the same integrated circuit, and this integrated circuit, the predrive circuit, and the inhibit circuit are arranged. Since the microcomputer for controlling the operation is arranged in the same package, it is possible to make the configuration compact while reliably suppressing unnecessary ignition from occurring in the ignition coil.
- 1 is a circuit diagram showing a configuration of an ignition device for an internal combustion engine in an embodiment of the present invention.
- 1 is an equivalent circuit diagram showing a configuration of a main part of an ignition device for an internal combustion engine in the present embodiment. It is a wave form diagram which shows the change of the primary voltage when the transistor of the ignition device for internal combustion engines in this embodiment is switched from an ON state to an OFF state. It is a wave form diagram which shows the change of the secondary voltage when the transistor of the ignition device for internal combustion engines in this embodiment is switched from an ON state to an OFF state. It is sectional drawing which shows the structure by which ECU which is a microcomputer in this embodiment, and the integrated circuit were arrange
- FIG. 1 is a circuit diagram showing a configuration of an internal combustion engine ignition device in the present embodiment.
- an internal combustion engine ignition device 1 includes an ignition coil IG connected to a battery B and having a primary coil 2 and a secondary coil 3, typically an IGBT (Insulated Gate Bipolar Transistor). 4, a pre-drive circuit 5, an inhibit circuit 6, a CR circuit 7, and an ECU (Electronic Control Unit) 8 that is a microcomputer that functions as a control unit of the transistor 4, the pre-drive circuit 5, and the inhibit circuit 6.
- the transistor 4, the pre-drive circuit 5 and the inhibit circuit 6 constitute an integrated circuit CK.
- the ECU 8 includes an arithmetic processing element and a memory that are not shown.
- the ignition coil IG one end of the primary coil 2 is connected to the battery B, and the other end is connected to the collector terminal of the transistor 4.
- the secondary coil 3 is arranged so that an induced electromotive force is generated in the vicinity of the primary coil 2, and is connected to a spark plug P that ignites an internal combustion engine (not shown).
- Transistor 4 functions as a switching element that energizes / cuts off the primary current from battery B to / from primary coil 2.
- the transistor 4 has a collector terminal, an emitter terminal, and a gate terminal (control terminal), which are connected to the primary coil 2 of the ignition coil IG, the ground potential, and the predrive circuit 5, respectively. ing.
- the pre-drive circuit 5 controls the on / off operation of the transistor 4 by controlling the energization / cutoff of the gate current from the gate current source Vcc to the gate terminal of the transistor 4.
- the pre-drive circuit 5 includes a transistor 5a, which is typically an NPN bipolar transistor, and the collector terminal, emitter terminal, and base terminal of the transistor 5a are the current path of the gate current of the transistor 4, the ground potential, respectively.
- ECU8 The pre-drive circuit 5 turns on / off the transistor 5a according to the IGN signal supplied from the ECU 8 to the base terminal of the transistor 5a, thereby energizing / cutting off the gate current from the gate current source Vcc to the gate terminal of the transistor 4. To control.
- the inhibit circuit 6 is connected between the gate current source Vcc and the gate terminal of the transistor 4 and between the collector terminal of the transistor 5a of the pre-drive circuit 5 via the CR circuit 7, and the gate current source Vcc and the gate terminal of the transistor 4 By controlling the connection / disconnection of the electrical connection between the pre-drive circuit 5 and the pre-drive circuit 5, the pre-drive circuit 5 is permitted / inhibited to turn on / off the transistor 4.
- the inhibit circuit 6 includes a transistor 6a, which is typically a PNP bipolar transistor, and the collector terminal, the emitter terminal, and the base terminal of the transistor 6a are connected to the gate terminal of the transistor 4 and the gate terminal via the CR circuit 7, respectively.
- the collector terminal of the transistor 5a of the pre-drive circuit 5 is connected to the gate current source Vcc and the ECU 8.
- the inhibit circuit 6 turns on / off the transistor 6a in response to the IGINH signal supplied from the ECU 8 to the base terminal of the transistor 6a, thereby connecting / connecting the electrical connection between the gate current source Vcc and the gate terminal of the transistor 4. Control cutting.
- the CR circuit 7 is connected between the collector terminal of the transistor 6a of the inhibit circuit 6 and the gate terminal of the transistor 4, and the gate voltage (gate collector) applied to the gate terminal of the transistor 4 by the CR constant which is the time constant.
- the fall time when the voltage is reduced is adjusted so as to exhibit a predetermined change delay time.
- the CR circuit 7 includes a resistance element R1 and a resistance element R2 connected in series, and a capacitor C connected between the resistance element R1 and the resistance element R2.
- the CR constant of the CR circuit 7 is set so as to define the relationship between the gate voltage applied to the gate terminal of the transistor 4 and the secondary voltage generated in the secondary coil 3, as will be described in detail later.
- the ECU8 controls the operation of the internal combustion engine ignition device 1 as a whole. Specifically, the ECU 8 controls the base terminal of the transistor 6a of the inhibit circuit 6 and the base terminal of the transistor 5a of the predrive circuit 5 via the IGINH output port 8a and the IGN output port 8b, respectively, as control signals. Enter.
- the IGNH signal is switched from the high level to the low level
- the IGN signal which is a pulse signal
- the spark plug P performs an ignition operation to generate a spark. That is, when the IGINH signal is maintained at a low level and the IGN signal is at a high level, the transistor 4 is turned on and the primary coil 2 is energized with power supplied from the battery B.
- the CR constant which is the time constant of the CR circuit 7 that stores electric charge in the capacitor C, is set to satisfy the following two conditions when an IGBT is used for the transistor 4.
- the CR constant can be set by defining the size of the resistance element R1 and the resistance element R2 and the capacitance of the capacitor C connected between them.
- the first condition is that when the normal ignition plug P is ignited, the change in the gate voltage when the transistor 4 is switched from the on state to the off state is relatively gentle, so that the transistor 4 is relatively gentle.
- the primary coil 2 of the ignition coil IG is switched from the energized state to the non-energized state relatively gently, and the secondary coil 3 is caused to rise relatively gently, so that the ignition plug This is a condition satisfying that the ignition operation can be surely performed at a predetermined timing without causing unnecessary ignition due to a sparking phenomenon in P.
- the second condition is that the transistor 5a of the pre-drive circuit 5 and the transistor 6a of the inhibit circuit 6 stop operating when the internal combustion engine stops unexpectedly while the spark plug P is performing the ignition operation.
- the voltage applied to the gate terminal of the transistor 4 decreases, the voltage applied to the gate terminal of the transistor 4 is changed relatively gently so that the transistor 4 is turned on relatively slowly from the off state.
- Switch to the state relatively gently switch the primary coil 2 of the ignition coil IG from the non-energized state to the energized state, and raise a relatively small reverse induced electromotive force also to the secondary coil 3 of the ignition coil IG. This is a condition satisfying that the ignition plug P does not generate unnecessary ignition due to a sparking phenomenon.
- the gate voltage applied to the gate terminal for the operation of the transistor 4 since the gate voltage applied to the gate terminal for the operation of the transistor 4 has individual differences even when the IGBT of the same standard is used, the gate voltage when the transistor 4 is switched from the on state to the off state.
- a predetermined number of gate voltages at the time when the transistor 4 is switched from the off state to the on state are measured, and the standard deviation ⁇ is obtained from the average value thereof, and even if the respective lower and upper limits are ⁇ 5 ⁇ .
- the CR constant that is the time constant of the CR circuit 7 is set so that the transistor 4 is relatively gently switched from the on state to the off state and from the off state to the on state.
- the degree of freedom in setting the change curve of the gate voltage that defines the on / off operation of the IGBT is higher than when the bipolar transistor is used.
- the switching operation of the transistor 4 can be reliably performed at an adjusted switching speed corresponding to the second condition.
- the internal combustion engine ignition device 1 having the above configuration suppresses unnecessary ignition by operating as shown below.
- the operation of the internal combustion engine ignition device 1 will be described in detail with reference to FIGS. 2, 3A and 3B.
- FIG. 2 is an equivalent circuit diagram showing a configuration of a main part of the internal combustion engine ignition device 1, and resistance elements R1, R2, R3, R4 and a capacitor C in the figure are the same as those in FIG.
- FIG. 3A is a waveform diagram showing changes in the primary voltage when the transistor of the ignition device for an internal combustion engine in the present embodiment is switched from the on state to the off state, the horizontal axis indicates time T, and the vertical axis indicates The voltage V is shown.
- FIG. 3B is a waveform diagram showing a change in the secondary voltage when the transistor of the ignition device for the internal combustion engine in the present embodiment is switched from the on state to the off state.
- the horizontal axis represents time T, and the vertical axis The axis indicates the voltage V.
- the gate current source Vcc is connected to the emitter of the transistor 6a of the inhibit circuit 6, while the ECU 8 is activated and the high level IGINH is output from the IGINH output port 8a of the ECU 8.
- a signal is sent, and an IGN signal that is a pulse signal is output from the IGN port 8b of the ECU 8.
- the transistor 6a of the inhibit circuit 6 is maintained in the off state, and the transistor 5a of the pre-drive circuit 5 is turned on when the IGN signal is high level, while the transistor 5a is turned off when the IGN signal is low level. Is done.
- the transistor 5a of the pre-drive circuit 5 is in the on state or the off state
- the IGINH signal sent from the IGINH output port 8a of the ECU 8 is at a high level
- the transistor 6a of the inhibit circuit 6 is off. In this state, no voltage is applied to the gate terminal of the transistor 4, and the transistor 4 is maintained in the off state without performing a switching operation.
- the transistor 6a of the inhibit circuit 6 is turned on, resulting from the gate current source Vcc as shown by current A in FIG.
- the voltage is applied to the gate terminal of the transistor 4 while accumulating charges in the capacitor C of the CR circuit 7.
- the transistor 5a of the pre-drive circuit 5 performs on / off operation in response to the IGN signal sent from the IGN port 8b.
- the transistor 4 is in an on state, and the primary coil 2 of the ignition coil IG is in an energized state, while if the transistor 5a is in an on state, the transistor 4 is The primary coil 2 of the ignition coil IG is cut off from the energized state and becomes non-energized.
- the primary coil 2 of the ignition coil IG is changed from the energized state to the non-energized state, so that an induced electromotive force is generated in the secondary coil 3.
- the spark plug P ignites the internal combustion engine.
- the CR constant which is the time constant of the CR circuit 7 that stores the electric charge in the capacitor C, satisfies the first condition described above. Therefore, as shown by current B in FIG. 2, the capacitor C of the CR circuit 7 releases the stored electric charge, and the gate current is not relatively rectangular but relatively gently reduced, so that the transistor 4 Does not suddenly switch to the off state, but relatively gently switches to the off state.
- the transistor 4 is switched relatively smoothly from the on state to the off state in this manner, so that the primary of the ignition coil IG at the time T1 as shown by the voltage change curve VA1 having the fall time ⁇ T in FIG. 3A. Since the coil 2 is switched relatively smoothly from the energized state to the non-energized state, as shown by the voltage change curve VB1 in FIG. 3B, the induced electromotive force rises relatively gently in the secondary coil 3 at time T1, and ignition occurs. The plug P is surely ignited at a predetermined timing without causing an unnecessary sparking phenomenon. On the other hand, when the CR circuit 7 is not provided, as shown by the voltage change curve VA2 in FIG.
- the primary coil 2 of the ignition coil IG suddenly falls, and the voltage change curve VB2 in FIG. 3B.
- the induced electromotive force generated in the secondary coil 3 has a large maximum peak value and subsequently exhibits a plurality of secondary peak values.
- the transistor 4 is switched from the off state to the on state, the primary coil 2 is switched from the non-energized state to the energized state, thereby generating a reverse induced electromotive force in the secondary coil 3. Since the peak value is small, the spark plug P does not cause an unnecessary sparking phenomenon.
- the transistor 5a of the pre-drive circuit 5 and the transistor 6a of the inhibit circuit 6 stop operating.
- a case where the voltage applied to the gate terminal of the transistor 4 decreases and the transistor 4 unexpectedly switches from the off state to the on state may be considered.
- the CR constant which is the time constant of the CR circuit 7 that stores the electric charge in the capacitor C, is set so as to satisfy the second condition described above. As shown in FIG. 5, since the current caused by the electric charge stored in the capacitor C flows into the gate terminal of the transistor 4, the voltage applied to the gate terminal of the transistor 4 gradually increases and then decreases. The transistor 4 changes from the on state to the off state after relatively slowly switching from the off state to the on state.
- the transistor 4 is relatively gently switched from the off state to the on state, so that the primary coil 2 of the ignition coil IG is relatively gently changed from the non-energized state to the energized state, so that the ignition coil IG
- the secondary induced electromotive force that is relatively gentle and has a small peak value also rises in the secondary coil 3. Therefore, the spark plug P does not generate an unnecessary spark, and the internal combustion engine is not ignited unnecessarily.
- the state of rise in the voltage change curve of the primary coil 2 of the ignition coil IG is like that of the fall of the voltage change curve VA1 in FIG.
- the rise of the voltage change curve 3 is similar to the rise of the voltage change curve VB1 of FIG.
- the transistor 4, the pre-drive circuit 5 and the inhibit circuit 6 constitute an integrated circuit CK. Details of the mounting configuration of the integrated circuit CK will be described with reference to FIG. Explained.
- FIG. 4 is a cross-sectional view showing a configuration in which an ECU, which is a microcomputer in the present embodiment, and an integrated circuit are arranged and stacked in the same package.
- the transistor 4, the pre-drive circuit 5, the inhibit circuit 6, and the CR circuit 7 are arranged in the same integrated circuit CK.
- the integrated circuit CK and the ECU 8 have a configuration in which the integrated circuit CK and the ECU 8 are sealed and integrated in a package PK such as the same housing, and are mounted on a desired support SB and fixed to a vehicle or the like.
- a package PK is, for example, a resin sealing body, and is molded by a transfer molding method or the like. According to such a configuration, the configuration of the internal combustion engine ignition device 1 can be made compact.
- an unnecessary secondary voltage can be prevented from being generated in the ignition coil by the CR circuit that is connected between the inhibit circuit and the gate terminal of the transistor and has a resistance element and a capacitor. It is possible to suppress ignition.
- the transistor is composed of an IGBT, the cost can be reduced, and the CR circuit can be easily set without causing unnecessary ignition in the ignition coil.
- the CR circuit causes the current caused by the electric charge stored in the capacitor of the CR circuit to flow to the gate terminal of the IGBT, the current from the capacitor is added to the current from the gate current source to the gate terminal.
- the change of the applied voltage can be adjusted, and it is possible to reliably suppress the occurrence of unnecessary ignition in the ignition coil.
- the time constant of the CR circuit is set so as to make the change in the voltage applied to the gate terminal of the IGBT relatively gentle, the change in the voltage applied to the gate terminal becomes relatively gentle. As a result, it is possible to more reliably suppress the occurrence of unnecessary ignition in the ignition coil.
- the transistor, the pre-drive circuit, the inhibit circuit, and the CR circuit are arranged in the same integrated circuit, and the integrated circuit and the microcomputer that controls the operation of the pre-drive circuit and the inhibit circuit are arranged in the same package. Therefore, the configuration can be made compact while reliably preventing unnecessary ignition from occurring in the ignition coil.
- the type, arrangement, number, and the like of the members are not limited to the above-described embodiments, and the components depart from the gist of the invention, such as appropriately replacing the constituent elements with those having the same operational effects. Of course, it can be appropriately changed within the range not to be.
- an ignition device for an internal combustion engine that can suppress unnecessary ignition, and it is widely applied to an internal combustion engine such as a vehicle because of its universal character. Expected to gain.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Abstract
Description
Claims (5)
- 点火コイルの1次コイルに流れる電流を通電及び遮断自在なトランジスタと、 ゲート電流源から前記トランジスタのゲート端子に流れるゲート電流の通電及び遮断を制御することによって、前記トランジスタをオン及びオフ自在なプリドライブ回路と、 前記ゲート電流源と前記トランジスタの前記ゲート端子との間に接続され、前記ゲート電流源と前記トランジスタの前記ゲート端子との間における電気接続の接続及び切断を制御することによって、前記プリドライブ回路に対して前記トランジスタのオン及びオフの駆動を許可及び禁止自在なインヒビット回路と、 前記インヒビット回路と前記トランジスタの前記ゲート端子との間に接続されて、抵抗素子及びキャパシタを有するCR回路と、 を備えることを特徴とする内燃機関用点火装置。
- 前記トランジスタは、IGBTから成ることを特徴とする請求項1に記載の内燃機関用点火装置。
- 前記CR回路は、前記キャパシタに蓄えられた電荷に起因する電流を前記IGBTのゲート端子に流すことを特徴とする請求項2に記載の内燃機関用点火装置。
- 前記CR回路の時定数は、前記IGBTのゲート端子に印加される電圧の変化を相対的になだらかにするように設定されていることを特徴とする請求項2に記載の内燃機関用点火装置。
- 前記トランジスタ、前記プリドライブ回路、前記インヒビット回路、及び前記CR回路は、同一の集積回路内に配置され、前記集積回路と前記プリドライブ回路及び前記インヒビット回路の動作を制御するマイクロコンピュータとが同一のパッケージ内に配置されていることを特徴とする請求項1に記載の内燃機関用点火装置。
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CN201180012321.8A CN103109079B (zh) | 2010-03-19 | 2011-03-15 | 内燃机用点火装置 |
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JP2010-065265 | 2010-03-19 | ||
JP2010065265A JP5517686B2 (ja) | 2010-03-19 | 2010-03-19 | 内燃機関用点火装置 |
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WO2011115097A1 true WO2011115097A1 (ja) | 2011-09-22 |
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PCT/JP2011/056020 WO2011115097A1 (ja) | 2010-03-19 | 2011-03-15 | 内燃機関用点火装置 |
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JP (1) | JP5517686B2 (ja) |
CN (1) | CN103109079B (ja) |
TW (1) | TWI468584B (ja) |
WO (1) | WO2011115097A1 (ja) |
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JP5912208B1 (ja) * | 2014-06-06 | 2016-04-27 | 新電元工業株式会社 | 点火装置 |
JP6631304B2 (ja) * | 2016-02-17 | 2020-01-15 | 株式会社デンソー | 点火装置 |
JP6296458B2 (ja) * | 2016-02-23 | 2018-03-20 | 日立オートモティブシステムズ阪神株式会社 | 内燃機関用点火装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0431664A (ja) * | 1990-05-25 | 1992-02-03 | Hanshin Electric Co Ltd | 内燃機関の点火装置 |
JPH08277769A (ja) * | 1995-04-04 | 1996-10-22 | Mitsubishi Electric Corp | 内燃機関用点火装置 |
JP2003049756A (ja) * | 2001-08-07 | 2003-02-21 | Denso Corp | 内燃機関用点火装置 |
JP2008144657A (ja) * | 2006-12-08 | 2008-06-26 | Mitsubishi Electric Corp | 内燃機関用点火制御システムの点火装置 |
Family Cites Families (1)
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CN1229573C (zh) * | 2000-05-26 | 2005-11-30 | 株式会社日立制作所 | 内燃机点火装置 |
-
2010
- 2010-03-19 JP JP2010065265A patent/JP5517686B2/ja active Active
-
2011
- 2011-03-14 TW TW100108530A patent/TWI468584B/zh active
- 2011-03-15 CN CN201180012321.8A patent/CN103109079B/zh active Active
- 2011-03-15 WO PCT/JP2011/056020 patent/WO2011115097A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0431664A (ja) * | 1990-05-25 | 1992-02-03 | Hanshin Electric Co Ltd | 内燃機関の点火装置 |
JPH08277769A (ja) * | 1995-04-04 | 1996-10-22 | Mitsubishi Electric Corp | 内燃機関用点火装置 |
JP2003049756A (ja) * | 2001-08-07 | 2003-02-21 | Denso Corp | 内燃機関用点火装置 |
JP2008144657A (ja) * | 2006-12-08 | 2008-06-26 | Mitsubishi Electric Corp | 内燃機関用点火制御システムの点火装置 |
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TWI468584B (zh) | 2015-01-11 |
JP2011196281A (ja) | 2011-10-06 |
CN103109079B (zh) | 2015-08-12 |
TW201200721A (en) | 2012-01-01 |
CN103109079A (zh) | 2013-05-15 |
JP5517686B2 (ja) | 2014-06-11 |
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