WO2011115032A1 - 白色発光ランプおよびそれを用いた白色led照明装置 - Google Patents
白色発光ランプおよびそれを用いた白色led照明装置 Download PDFInfo
- Publication number
- WO2011115032A1 WO2011115032A1 PCT/JP2011/055885 JP2011055885W WO2011115032A1 WO 2011115032 A1 WO2011115032 A1 WO 2011115032A1 JP 2011055885 W JP2011055885 W JP 2011055885W WO 2011115032 A1 WO2011115032 A1 WO 2011115032A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phosphor
- light
- white light
- red
- emitting
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 249
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000011572 manganese Substances 0.000 claims abstract description 46
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 34
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 24
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- -1 manganese-activated magnesium Chemical class 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 12
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 8
- 150000004645 aluminates Chemical class 0.000 claims description 7
- QXQVDANUNXECKG-UHFFFAOYSA-N OP(O)(Cl)=O.OP(O)(Cl)=O.OP(O)(Cl)=O.P.P Chemical compound OP(O)(Cl)=O.OP(O)(Cl)=O.OP(O)(Cl)=O.P.P QXQVDANUNXECKG-UHFFFAOYSA-N 0.000 claims description 6
- FIMLVRCVMNGRMP-UHFFFAOYSA-N [Mn].[Eu] Chemical compound [Mn].[Eu] FIMLVRCVMNGRMP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 102100032047 Alsin Human genes 0.000 claims description 4
- 101710187109 Alsin Proteins 0.000 claims description 4
- 150000004760 silicates Chemical class 0.000 claims description 4
- 238000009877 rendering Methods 0.000 abstract description 30
- 239000000126 substance Substances 0.000 abstract description 6
- 229910003564 SiAlON Inorganic materials 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 12
- 238000000295 emission spectrum Methods 0.000 description 12
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- 230000003014 reinforcing effect Effects 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- ITVPBBDAZKBMRP-UHFFFAOYSA-N chloro-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound OP(O)(Cl)=O ITVPBBDAZKBMRP-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 150000001217 Terbium Chemical class 0.000 description 1
- OSTULDXPMCGEOM-UHFFFAOYSA-N [O-][Ge](F)=O.[O-][Ge](F)=O.O[Ge](F)=O.O[Ge](F)=O.O[Ge](F)=O.[Mg+2].P Chemical class [O-][Ge](F)=O.[O-][Ge](F)=O.O[Ge](F)=O.O[Ge](F)=O.O[Ge](F)=O.[Mg+2].P OSTULDXPMCGEOM-UHFFFAOYSA-N 0.000 description 1
- YELHQTOAIOZZMW-UHFFFAOYSA-N [P].O=S.[La] Chemical class [P].O=S.[La] YELHQTOAIOZZMW-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical class [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/661—Chalcogenides
- C09K11/663—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/674—Halogenides
- C09K11/675—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7737—Phosphates
- C09K11/7738—Phosphates with alkaline earth metals
- C09K11/7739—Phosphates with alkaline earth metals with halogens
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7784—Chalcogenides
- C09K11/7787—Oxides
- C09K11/7789—Oxysulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to a white light-emitting lamp having a semiconductor light-emitting element and a white LED lighting device using the same, and more particularly to a white light-emitting lamp with improved color rendering and luminous efficiency and a white LED lighting device using the same.
- LEDs Light emitting diodes
- LEDs are semiconductor light emitting devices that emit by converting electrical energy into ultraviolet light or visible light. They are long-lived, highly reliable, and reduce replacement work when used as a light source. It has the advantage that LED lamps with LED chips sealed with transparent resin, etc. are backlights for liquid crystal display devices used in display units of portable communication devices, PC peripheral devices, OA devices, household electric devices, signal devices, Widely used in lighting devices such as switches, in-vehicle lamps, and general lighting.
- white light-emitting LED lamps are rapidly spreading in applications such as backlights for liquid crystal display devices and in-vehicle lamps, and will greatly expand in the future as alternatives to fluorescent lamps. Is expected. For example, since a general fluorescent lamp uses mercury, it is considered that a white LED lamp not using mercury will be replaced with a fluorescent lamp in the future.
- white LED lamps that are widely used or tried include LED lamps that combine blue LEDs and yellow phosphors (YAG, etc.), ultraviolet or violet LEDs with emission wavelengths of 360 to 440 nm, and blue LEDs.
- LED lamps that combine a mixture of green, red, and red phosphors (BGR phosphor) are known.
- the former is more popular because it has better luminance characteristics than the latter.
- the former white LED lamp has a target light emission chromaticity as light source light because the light distribution is biased toward the blue component and the yellow component, and the light of the red component is insufficient.
- the reflected light when an object is viewed using this light source is very different from the natural color seen under sunlight, and has a problem that the color rendering is low.
- the white LED lamp using the latter ultraviolet light emitting LED is less in luminance than the former, but has little color unevenness in light emission and projection light, and is expected to become the mainstream of white lamps in the future.
- improvement of lamp characteristics such as brightness (brightness) and color rendering properties is being promoted based on the characteristics of phosphors and combinations thereof (Patent Literature). 1 and 2).
- Patent Literature In order to improve the brightness of a white LED lamp, it has been studied to use a yellow phosphor having an emission peak wavelength of 540 to 570 nm instead of a green phosphor having an emission peak wavelength of 500 to 530 nm.
- a white LED lamp using a mixed phosphor (BYR phosphor) containing a yellow phosphor instead of a green phosphor has a higher brightness than a white LED lamp using a BGR phosphor.
- BYR phosphor mixed phosphor
- a white LED lamp to which a BYR phosphor containing a conventional yellow phosphor is applied does not necessarily have a sufficient effect of improving characteristics, and it is desired to further increase the brightness and color rendering of the white LED lamp. It has been.
- the yellow phosphor various phosphors used in combination with blue light emitting LEDs have been proposed.
- yellow phosphors used in combination with blue light emitting LEDs include cerium activated yttrium aluminate phosphor (YAG), cerium activated terbium aluminate phosphor (TAG), and europium activated alkaline earth silicate phosphor. (BOSS) is known (see Patent Document 3).
- YAG cerium activated yttrium aluminate phosphor
- TAG cerium activated terbium aluminate phosphor
- BOSS europium activated alkaline earth silicate phosphor.
- Patent Document 3 With regard to conventional yellow phosphors, although emission characteristics when excited by blue light emitted from a blue light emitting LED (emission wavelength: 430 to 500 nm) have been studied, light emitted from ultraviolet light emission or violet light emission LED The light emission characteristics when excited with light having a wavelength of 360 to 440 nm have not been sufficiently studied, and the examination and improvement of the light emission characteristics are demanded.
- a white LED light emitting device in which a blue light emitting LED, a UV light emitting LED, a green light emitting phosphor, and a red light emitting phosphor are combined has been proposed in order to improve the color rendering of white light (see Patent Document 4).
- a certain degree of color rendering is improved, but since a part of blue light is easily absorbed by the phosphor, the luminance from the light emitting portion tends to be lowered.
- An object of the present invention is to use a BGR phosphor containing a blue phosphor, a yellow phosphor and a red phosphor in combination with a semiconductor light emitting device such as an LED, mainly in a longer wavelength region than the main emission peak of the red phosphor.
- a semiconductor light emitting device such as an LED
- a white light emitting lamp includes a semiconductor light emitting element that emits ultraviolet or blue light emitted on a substrate, and is excited by light emitted from the semiconductor light emitting element to emit blue light, green light, red light, and deep light.
- the white light-emitting lamp 1 that emits white light by mixing colors emitted from the body, the red phosphor, and the deep red phosphor, the deep red phosphor has a longer wavelength region than the main emission peak of the red phosphor.
- the red phosphor having a main emission peak has a general formula: (Sr 1-x , Eu x ) ⁇ Si ⁇ Al ⁇ O ⁇ N ⁇ (1) (Where x is 0 ⁇ x ⁇ 1, ⁇ is 0 ⁇ ⁇ 3, ⁇ is 5 ⁇ ⁇ ⁇ 9, ⁇ is 1 ⁇ ⁇ ⁇ 5, ⁇ is 0.5 ⁇ ⁇ ⁇ 2, and ⁇ is 5 ⁇ Europium-activated sialon phosphor having a composition represented by the following formula: (Sr 1-xy Ca x Eu y ) AlSiN 3 (2) (Wherein x is a number satisfying 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 0.2, 0 ⁇ x + y ⁇ 1), while comprising at least one europium-activated couun phosphor,
- the deep red phosphor is represented by the general formula: ⁇ MgO ⁇ ⁇ MgF 2.
- a semiconductor light emitting device that emits light having a peak wavelength in a range of 370 nm to 470 nm, and a light emitting unit that emits white light when excited by light emitted from the semiconductor light emitting device
- a blue phosphor that absorbs and emits light having a peak wavelength in the range of 440 nm to 470 nm
- a green phosphor that absorbs the light and emits light in a range of peak wavelength from 530 nm to 600 nm
- Light emission including a red phosphor that absorbs and emits light having a peak wavelength in a range of 610 nm to 630 nm and a deep red phosphor that absorbs the light and emits light in a peak wavelength of 640 nm to 660 nm.
- the blue phosphor, the green phosphor, the red phosphor, and the deep red light-emitting phosphor have an average particle diameter in the range of 10 ⁇ m to 80 ⁇ m.
- the light-emitting unit is provided so as to cover a light-emitting surface of the semiconductor light-emitting element, and contains the blue phosphor, the yellow phosphor, the red phosphor, and the deep red phosphor. It is preferable to have a transparent resin layer.
- the light-emitting portion is provided so as to cover a light-emitting surface of the semiconductor light-emitting element, and does not contain the blue phosphor, the yellow phosphor, the red phosphor, and the deep red phosphor.
- a first transparent resin layer and a second transparent resin provided to cover the first transparent resin layer and containing the blue phosphor, the yellow phosphor, the red phosphor, and the deep red phosphor It is preferable to provide a layer.
- the semiconductor light emitting element is preferably a light emitting diode or a laser diode that emits light having a peak wavelength in a range of 370 nm to 470 nm.
- the white LED illumination device includes the white light-emitting lamp according to the present invention.
- a deep red phosphor having a main emission peak in a longer wavelength region than the main emission peak of the red phosphor is further added, and the red phosphor and the deep red phosphor having a specific composition are added. Therefore, both luminance characteristics (light emission efficiency) and color rendering can be improved.
- Such a white light-emitting lamp that achieves both high color rendering properties and high luminance can be effectively used for lighting applications and the like.
- Sectional drawing which shows the structure of the white light emitting lamp which concerns on one Embodiment of this invention. Sectional drawing which shows the modification of the white light emitting lamp shown in FIG.
- the graph which shows an example of the emission spectrum of 4 types of B, G, R, DR fluorescent substance applied to this invention.
- the graph which shows an example of the emission spectrum of the white LED lamp which concerns on embodiment of this invention.
- the graph which shows an example of the emission spectrum of the white LED lamp which did not contain DR fluorescent substance and formed the light emission part only with the conventional BGR fluorescent substance.
- FIG. 1 is a sectional view showing a configuration of an embodiment in which a white light emitting lamp of the present invention is applied to a white LED lamp.
- a white LED lamp 1 shown in the figure has an LED chip 2 as an excitation source (light source).
- the excitation source is not limited to the LED chip 2.
- a semiconductor light-emitting element such as a light-emitting diode or a laser diode whose emission peak wavelength is in the range of 370 nm to 470 nm is used.
- LED chip 2 As the LED chip 2 as an excitation source, various light emitting diodes such as InGaN, GaN, and AlGaN are used.
- the emission peak wavelength of the LED chip 2 is preferably in the range of 370 nm to 430 nm.
- a white LED lamp 1 having high luminance and excellent color reproducibility is realized. be able to.
- a light emitting diode as an excitation source is denoted as LED chip 2
- a light emitting lamp for finally obtaining white light emission is denoted as white LED lamp 1.
- the LED chip 2 is mounted on the wiring board 3.
- a cylindrical frame 4 is provided on the wiring board 3, and the inner wall surface of the frame 4 is a reflective layer.
- the frame 4 has at least a surface formed of a conductive material such as metal, and constitutes a part of the electrical wiring for the LED chip 2.
- the upper electrode 2 a of the LED chip 2 is electrically connected to the frame body 4 through bonding wires 5.
- the lower electrode 2 b of the LED chip 2 is electrically and mechanically connected to the metal wiring layer 6 of the wiring board 3.
- a transparent resin 7 is filled in the frame body 4, and the LED chip 2 is embedded in the transparent resin layer 7.
- the transparent resin layer 7 in which the LED chip 2 is embedded contains a phosphor 8 for obtaining white light.
- the phosphor 8 dispersed in the transparent resin layer 7 is excited by the light emitted from the LED chip 2 to emit white light. That is, the transparent resin layer 7 in which the phosphor 8 is dispersed functions as the light emitting unit 9 that emits white light.
- the light emitting unit 9 is disposed so as to cover the light emitting surface of the LED chip 2.
- a silicone resin or an epoxy resin is used for the transparent resin layer 7.
- the configurations of the substrate 3 and the frame body 4 are arbitrary.
- the light emitting unit 9 may include a first transparent resin layer 7A that does not contain the phosphor 8 and a second transparent resin layer 7B that contains the phosphor 8.
- the first transparent resin layer 7A is disposed so as to cover the light emitting surface of the LED chip 2
- the second transparent resin layer 7B is disposed so as to cover the first transparent resin layer 7A.
- the light emitting unit 9 having such a configuration contributes to the improvement of the light emission efficiency of the white LED lamp 1.
- the first transparent resin 7A is arranged in a range of 500 to 2000 ⁇ m from the light emitting surface of the LED chip 2, for example.
- the phosphor 8 for obtaining white light absorbs light (for example, ultraviolet light or violet light) emitted from the LED chip 2 and emits light having a peak wavelength in the range of 440 nm to 470 nm.
- Body a green (G) phosphor that emits light in a peak wavelength range of 535 nm to 570 nm, a red (R) phosphor that emits light in a peak wavelength range of 590 nm to 630 nm, and a peak wavelength of 640 nm or more
- DR deep red
- the phosphor 8 is a mixed phosphor (BGR-DR phosphor) of a BGR phosphor and a deep red (DR) phosphor.
- the BGR-DR phosphor 8 may contain two or more types of phosphors of the same color, and may additionally contain a phosphor having an emission color other than blue, yellow, red, and deep red. Good.
- the BGR-DR phosphor 8 is preferably dispersed in the transparent resin layer 7 in a state where B, G, R, and DR phosphors are bonded in advance with a binder.
- the electrical energy applied to the white LED lamp 1 is converted into ultraviolet light or violet light by the LED chip 2.
- Light emitted from the LED chip 2 is converted into light having a longer wavelength by the BGR-DR phosphor 8 dispersed in the transparent resin layer 7.
- the total emission of white light is emitted from the white LED lamp 1 by the emission from the blue, yellow, red, and deep red phosphors contained in the BGR-DR phosphor 8 in a mixed color and emitted. Is done.
- the peak wavelength of each phosphor constituting the BGR-DR phosphor 8 is within the above range, white light excellent in luminance, color rendering and the like can be obtained.
- the blue phosphor has a general formula: (Sr 1-xyz , Ba x , Ca y , Eu z ) 5 (PO 4 ) 3 Cl. (4) (Wherein x, y and z are numbers satisfying 0 ⁇ x ⁇ 0.5, 0 ⁇ y ⁇ 0.1, 0.005 ⁇ z ⁇ 0.1).
- An activated alkaline earth chlorophosphate phosphor is used.
- the europium-activated alkaline earth chlorophosphate phosphor whose composition is represented by the formula (3) is particularly excellent in absorption efficiency of ultraviolet light or violet light having a peak wavelength in the range of 370 to 430 nm.
- the green phosphor has the general formula: (Ba 1-x-y -z, Sr x, Ca y, Eu z) (Mg 1-u Mn u ) Al 10 O 17 (5) (In the formula, x, y and z are numbers satisfying 0 ⁇ x ⁇ 0.2, 0 ⁇ y ⁇ 0.1, 0.005 ⁇ z ⁇ 0.5, 0.1 ⁇ u ⁇ 0.5.
- Europium manganese activated aluminate phosphor having a composition represented by: General formula: (Sr 1 ⁇ x ⁇ yz ⁇ u , Ba x , Mg y , Eu z , Mn u ) 2 SiO 4 (6) (Wherein x, y, z and u are 0.1 ⁇ x ⁇ 0.35, 0.025 ⁇ y ⁇ 0.105, 0.025 ⁇ z ⁇ 0.25, 0.0005 ⁇ u ⁇ 0.
- a europium manganese activated silicate phosphor having a composition represented by the general formula: (Sr 1-x , Eu x ) ⁇ Si ⁇ Al ⁇ O ⁇ N ⁇ (7) (Where x is 0 ⁇ x ⁇ 1, ⁇ is 0 ⁇ ⁇ 3, ⁇ is 12 ⁇ ⁇ ⁇ 14, ⁇ is 2 ⁇ ⁇ ⁇ 3.5, ⁇ is 1 ⁇ ⁇ ⁇ 3, and ⁇ is 20 ⁇ at least one selected from the group consisting of europium activated sialon phosphors having a composition represented by:
- the formula is a red phosphor: (Sr 1-x, Eu x) ⁇ Si ⁇ Al ⁇ O ⁇ N ⁇ ... (1) (Where x is 0 ⁇ x ⁇ 1, ⁇ is 0 ⁇ ⁇ 3, ⁇ is 5 ⁇ ⁇ ⁇ 9, ⁇ is 1 ⁇ ⁇ ⁇ 5, ⁇ is 0.5 ⁇ ⁇ ⁇ 2, and ⁇ is 5 ⁇ europium-activated sialon phosphor having a composition represented by the following formula: (Sr 1-xy Ca x Eu y ) AlSiN 3 (2) (Wherein x is a number satisfying 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 0.2, 0 ⁇ x + y ⁇ 1), at least one europium-activated couun phosphor is used.
- the deep red phosphor has a general formula: ⁇ MgO ⁇ ⁇ MgF 2. (Ge 1-x Mn x ) O 2 (3) (Wherein ⁇ and ⁇ are numbers satisfying 3.0 ⁇ ⁇ ⁇ 4.0, 0.4 ⁇ ⁇ ⁇ 0.6, and 0.001 ⁇ x ⁇ 0.5).
- a manganese-activated magnesium fluorogermanate phosphor having the following formula is used.
- the gungan-activated magnesium fluorogermanate phosphor having the composition of the above formula (3), when the coefficients ⁇ and ⁇ are within the above ranges, an effect of improving light emission luminance and color rendering can be obtained.
- the Mn content is in the range of 0.001 to 0.5 as the value of x in formula (3). If the value of x is less than 0.001, the reinforcing effect of the red light emitting component cannot be sufficiently obtained. On the other hand, if the value of x exceeds 0.5, the reduction of the green light emitting component of 535 to 570 nm becomes more significant than the effect of increasing the red light emitting component of 600 to 700 nm, and the overall light emission efficiency is lowered. Therefore, the value of x is more preferably in the range of 0.002 to 0.2.
- FIG. 3 shows an emission spectrum (B) of Eu-activated alkaline earth alkaline earth chlorophosphate phosphor ((Sr 0.95 , Ba 0.043 , Eu 0.007 ) 5 (PO 4 ) 3 Cl).
- the manganese-activated magnesium fluorogermanate phosphor has a main emission peak in a longer wavelength region than the main emission peak of the conventional red phosphor (R). It turns out that the emission intensity at 670 nm increases and the redness is enhanced. This makes it possible to reinforce the red light emitting component.
- red phosphors are inferior in luminous efficiency to ultraviolet rays and violet light in the wavelength range of 370 to 430 nm, compared to blue phosphors and green phosphors.
- white light obtained by mixing blue, yellow, and red light-emitting components by reinforcing the deep red light-emitting components with a manganese-activated magnesium fluorogermanate phosphor (DR).
- DR manganese-activated magnesium fluorogermanate phosphor
- the conventional red light-emitting phosphor and the manganese-activated magnesium fluorogermanate phosphor (DR) coexist to reinforce the lack of light emission of the red phosphor and improve the brightness balance, thereby improving the white light Can increase the brightness.
- the color rendering property of white light can be enhanced by improving the luminance balance.
- the red emission component is reinforced by adding Mn emission to the emission spectrum of the Eu-activated alkaline earth silicate phosphor.
- the Mn content is in the range of 0.0005 to 0.02 as the value of u in the formula (6). If the value of u is less than 0.0005, the reinforcing effect of the red light emitting component cannot be sufficiently obtained. On the other hand, if the value of u exceeds 0.02, the reduction of the green light emitting component at 535 to 570 nm becomes more significant than the effect of increasing the red light emitting component at 600 to 700 nm.
- the value of u is more preferably in the range of 0.005 to 0.02.
- Eu is an activator mainly for obtaining green light emission.
- the Eu content is in the range of 0.025 to 0.25 as the value of z in formula (6) in order to obtain green light emission. If the Eu content is out of the above range, the intensity of the green light-emitting component is reduced.
- the Eu content is more preferably in the range of 0.05 to 0.2 as the value of z.
- the effect of reinforcing the red light emitting component by the Eu and Mn activated alkaline earth silicate phosphors is a phenomenon that appears prominently when excited with ultraviolet light or violet light having a peak wavelength in the range of 370 to 430 nm. Even when the Eu and Mn activated alkaline earth silicate phosphor is excited with blue light having a peak wavelength of 440 to 470 nm (light emitted from a blue light emitting LED), the red component of the emission spectrum is slightly enhanced.
- the Eu and Mn activated alkaline earth silicate phosphors whose composition is represented by the formula (6) are particularly green fluorescence of the white LED lamp 1 using the LED chip 2 having a peak wavelength in the range of 370 to 430 nm as an excitation source. It is effective as a body.
- Mn is added to a conventional Eu-activated alkaline earth silicate phosphor ((Sr, Ba, Eu) 2 SiO 4 phosphor) causes the body color of the phosphor to become black at the time of phosphor production. Therefore, good light emission characteristics cannot be obtained. Therefore, in the green phosphor of this embodiment, Mg is further added to Eu and Mn activated alkaline earth silicate phosphor ((Sr, Ba, Eu, Mn) 2 SiO 4 phosphor).
- the Mg content is in the range of 0.025 to 0.105 as the value of y in the formula (6).
- the value of y is less than 0.025, it is not possible to sufficiently obtain the blackening prevention effect of the green phosphor.
- the value of y exceeds 0.105, the green light emitting component at 535 to 570 nm is lowered.
- the value of y is more preferably in the range of 0.075 to 0.105.
- the content of Ba is set to a range of 0.1 to 0.35 as the value of x in the formula (4) when Eu and Mn activated alkaline earth silicate phosphors are used as green phosphors.
- the content of Ba is out of the above range, the crystal structure of the alkaline earth silicate is changed, resulting in a greenish phosphor.
- the value of x is more preferably in the range of 0.1 to 0.3.
- the blue phosphor and the red phosphor may be various as long as they efficiently absorb light (particularly ultraviolet light or violet light) emitted from the LED chip 2.
- the phosphors can be used.
- blue phosphors are Eu-activated alkaline earth chlorophosphate phosphors and Eu-activated aluminate phosphors in terms of combination with green phosphors comprising Eu and Mn activated alkaline earth silicate phosphors.
- the red phosphor is preferably an Eu-activated lanthanum oxysulfide phosphor.
- Eu-activated alkaline earth chlorophosphate phosphor as blue phosphor is General formula: (Sr 1-xyz , Ba x , Ca y , Eu z ) 5 (PO 4 ) 3 Cl (4) (Wherein x, y, and z are numbers satisfying 0 ⁇ x ⁇ 0.5, 0 ⁇ y ⁇ 0.1, and 0.005 ⁇ z ⁇ 0.1). Is preferred.
- the Eu-activated alkaline earth chlorophosphate phosphor that satisfies the composition of the formula (4) has high absorption efficiency of the light emitted from the LED chip 2, and in the formulas (5), (6), and (7). It is excellent in combination with the green phosphor to be expressed.
- Eu-activated aluminate phosphor General formula: (Ba 1-x-y -z, Sr x, Ca y, Eu z) (Mg 1-u Mn u) Al 10 O 17 ... (5) (In the formula, x, y and z are numbers satisfying 0 ⁇ x ⁇ 0.2, 0 ⁇ y ⁇ 0.1, 0.005 ⁇ z ⁇ 0.5, 0.1 ⁇ u ⁇ 0.5. It is preferable to have a composition represented by: The Eu-activated aluminate phosphor that satisfies the composition of the formula (3) has a high absorption efficiency for light emitted from the LED chip 2 and is excellent.
- Europium activated sialon phosphor as red phosphor General formula: (Sr 1-x , Eu x ) ⁇ Si ⁇ Al ⁇ O ⁇ N ⁇ (1) (Where x is 0 ⁇ x ⁇ 1, ⁇ is 0 ⁇ ⁇ 3, ⁇ is 5 ⁇ ⁇ ⁇ 9, ⁇ is 1 ⁇ ⁇ ⁇ 5, ⁇ is 0.5 ⁇ ⁇ ⁇ 2, and ⁇ is 5 ⁇ It is preferable that it has a composition represented by:
- the europium activated sialon phosphor satisfying the composition of the formula (1) has a high absorption efficiency of the light emitted from the LED chip 2, and the green fluorescence represented by the formulas (5), (6) and (7). Excellent combination with the body.
- Manganese-activated magnesium fluorogermanate phosphor as a deep red phosphor General formula: ⁇ MgO ⁇ ⁇ MgF 2. (Ge 1-x Mn x ) O 2 (3) (Wherein ⁇ and ⁇ are numbers satisfying 3.0 ⁇ ⁇ ⁇ 4.0, 0.4 ⁇ ⁇ ⁇ 0.6, and 0.001 ⁇ x ⁇ 0.5). It is preferable to have.
- the manganese-activated magnesium fluorogermanate phosphor satisfying the composition of the formula (3) has a main emission peak in a longer wavelength region than the main emission peak of the red phosphor (R), and an emission intensity of 630 to 670 nm. Increases and redness is found to be enhanced. Thereby, it is possible to reinforce the red light emitting component and effectively improve the color rendering.
- the peak value of the blue light emitting component is 450 nm
- the peak value of the green light emitting component is 570 nm
- the peak value of the red light emitting component is 630 nm
- the peak value of the deep red light emitting component is 660 nm
- a characteristic value having a luminance of 370 mcd or more and an average color rendering index (Ra) of 98 or more can be obtained.
- FIG. 5 shows an example of the emission spectrum of the white LED lamp 1 which is composed only of blue (B), green (G) and red (R) phosphors and does not contain a deep red (DR) phosphor.
- B blue
- G green
- R red
- FIG. 5 shows an example of the emission spectrum of the white LED lamp 1 which is composed only of blue (B), green (G) and red (R) phosphors and does not contain a deep red (DR) phosphor.
- B blue
- G green
- R red
- FIG. 5 shows an example of the emission spectrum of the white LED lamp 1 which is composed only of blue (B), green (G) and red (R) phosphors and does not contain a deep red (DR) phosphor.
- the emission intensity emission efficiency
- Ra average color rendering index
- Blue, yellow, red and deep red phosphors are dispersed in the transparent resin layer 7 as a mixture thereof, for example.
- the mixing ratio of each phosphor is arbitrarily set according to the chromaticity of the target white light. If necessary, phosphors other than blue, yellow, red and deep red may be added. In order to obtain good white light emission at the light emitting portion 9, the mixing ratio of each phosphor is 20 to 35 mass% for the blue phosphor, 1 to 10 mass% for the green phosphor, and 0.4 to 70 mass% for the red phosphor. %, And the deep red phosphor is preferably 3 to 25% by mass (the total of the blue phosphor, yellow phosphor, red phosphor and deep red phosphor is 100% by mass).
- each of the phosphors of blue, yellow, red and deep red has an average particle diameter in the range of 10 ⁇ m to 80 ⁇ m.
- the average particle size referred to here indicates the median value (50% value) of the particle size distribution.
- the blue, yellow, red and deep red phosphors are integrated in advance with a binder such as an inorganic binder or an organic binder. You may make it disperse
- FIG. A finely divided alkaline earth borate or the like is used as the inorganic binder, and a transparent resin such as an acrylic resin or a silicone resin is used as the organic binder.
- the phosphors are randomly connected to increase the particle size. As a result, non-uniformity of the dispersion state based on the difference in the sedimentation speed of the phosphors in the transparent resin layer 7 is eliminated, so that it is possible to improve white light reproducibility and emission uniformity. .
- the white LED lamp 1 of this embodiment is excellent in lamp characteristics such as luminance characteristics, color rendering properties, and color reproducibility. Therefore, the white LED lamp 1 is effective as a light source for a lighting device such as an in-vehicle lamp, a signal device, various switches, and general illumination.
- the lighting device according to the embodiment of the present invention includes one or a plurality of white LED lamps 1 as a light source.
- the white LED lamp 1 is used by being arranged in various arrangements on the mounting substrate in accordance with the configuration of the illumination device to be applied.
- the illuminating device using the white LED lamp 1 of this embodiment provides high-quality illumination as an alternative to the conventional fluorescent lamp.
- Example 1-2-7 Eu-activated alkaline earth chlorophosphate ((Sr 0.95 , Ba 0.043 , Eu 0.007 ) 5 (PO 4 ) 3 ⁇ Cl) phosphor having an average particle size of 12 ⁇ m as a blue phosphor (B) (Hereinafter abbreviated as “B1” in Table 1), Eu and Mn activated alkaline earth silicate having an average particle size of 15 ⁇ m as green phosphor (G) ((Sr 1.48 , Ba 0.32 , Mg 0.095 , Eu 0.1 , Mn 0.005 ) 2 SiO 4 ) phosphor (hereinafter abbreviated as “G1” in Table 1), Europium activated aluminate phosphor ((Ba 0.95 , Eu 0.05 ) (Mg 0.7 Mn 0.3 ) Al 10 O 17 ) (hereinafter referred to as Table 1) having a mean particle size of 15 ⁇ m as a green phosphor.
- B1 blue phospho
- G2 Europium activated sialon phosphor ((Sr 2.7 Eu 0.3 ) Si 13 Al 3 O 2 N 21 ) (hereinafter abbreviated as “G3” in Table 1) as a green phosphor
- R red phosphor
- EuG3 europium activated sialon phosphors
- europium activated cousin phosphors having an average particle diameter of 12 ⁇ m and compositions as shown in Table 1
- manganese-activated magnesium fluorogermanate phosphors having an average particle diameter of 12 ⁇ m and having compositions as shown in Table 1 were prepared as deep red phosphors (DR).
- the particle size of each phosphor is a value measured by a laser diffraction method.
- Each phosphor was mixed with a silicone resin at a ratio of 30% by mass to prepare a slurry.
- the blue phosphor slurry, the green phosphor slurry, the red phosphor slurry, and the deep red phosphor slurry were mixed at a weight ratio (mass%) shown in Table 1 to prepare each mixed phosphor.
- a silicone resin not containing a phosphor is dropped on the LED chip (emission peak wavelength: 399 nm, size: 300 ⁇ 300 ⁇ m) 2 of the white LED lamp 1 shown in FIG.
- the mixed slurry containing the body was dropped, and the silicone resin was cured by heat treatment at 140 ° C., thereby producing the white LED lamp 1 according to each example.
- the obtained white LED lamp was used for the characteristic evaluation mentioned later.
- Comparative Example 1 The point which does not contain the manganese activated magnesium fluoro germanate phosphor which is a deep red phosphor, the point using the conventional europium activated lanthanum oxysulfide phosphor as the red phosphor (R), and the mixing ratio of the BGR phosphor
- the white LED lamp 1 according to Comparative Example 1 having the same configuration as that shown in FIG. 2 is manufactured by performing the same processing as in Example 1 except that the adjustment is performed as shown in Table 1, and the characteristic evaluation described later is performed. It was used for.
- Example 2 The same treatment as in Example 1 was performed except that a conventional europium activated lanthanum oxysulfide phosphor was used as the red phosphor (R) and that the mixing ratio of the BGR phosphor was adjusted as shown in Table 1.
- Comparative Example 3 Comparative Example 3 having the same configuration as that shown in FIG. 2 except that the strontium (Sr) amount in the red phosphor (R) is set to an excessively large value and using a sialon phosphor.
- the white LED lamp 1 which concerns on this was produced, and it used for the characteristic evaluation mentioned later.
- Comparative Example 4 The white according to Comparative Example 4 is processed in the same manner as in Example 1 except that a sialon phosphor not containing strontium (Sr) is used as the red phosphor (R), and has the same configuration as that shown in FIG.
- the LED lamp 1 was produced and subjected to the characteristic evaluation described later.
- Example 5 In the deep red phosphor, the same treatment as in Example 1 was performed except that a manganese-activated magnesium fluorogermanate phosphor in which the content ratio of Mn to Ge was set to be too small was used.
- the white LED lamp 1 which concerns on the comparative example 5 which has the structure of was produced, and it used for the characteristic evaluation mentioned later.
- Example 6 In the deep red phosphor, the same treatment as in Example 1 was carried out except that a manganese-activated magnesium fluorogermanate phosphor in which the content ratio of Mn to Ge was set excessively was used.
- the white LED lamp 1 which concerns on the comparative example 6 which has the structure of was produced, and it used for the characteristic evaluation mentioned later.
- the white LED lamps according to Examples 1 to 27 and Comparative Examples 1 to 6 prepared as described above were turned on by supplying a current of 20 mA, and the luminance (light emission efficiency) and average color rendering index Ra of each white LED lamp were determined. It was measured.
- the average color rendering index Ra was measured in accordance with Japanese Industrial Standard (JIS Z 8726-1990: Color rendering property evaluation method of light source).
- the light emission characteristics (brightness and light emission efficiency) of each white LED lamp were measured using CAS 140 COMPACT ARRAY SPECTROMETER manufactured by Instrument System and MCPD device manufactured by Otsuka Electronics. These measurement results are shown in Table 1.
- a deep red phosphor having a main emission peak in a longer wavelength region than the main emission peak of the red phosphor is further added, and the red phosphor and the deep red phosphor coexist. Therefore, both luminance characteristics (light emission efficiency) and color rendering can be improved.
- Such a white light-emitting lamp that achieves both high color rendering properties and high luminance can be effectively used for lighting applications and the like.
- SYMBOLS 1 White LED lamp, 2 ... LED chip, 3 ... Wiring board, 4 ... Frame body, 5 ... Bonding wire, 6 ... Metal wiring layer, 7 ... Transparent resin layer, 7A ... 1st transparent resin layer, 7B ... 1st 2 transparent resin layers, 8... BGR-DR phosphor, 9.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
一般式:(Sr1-x,Eux)αSiβAlγOδNω …(1)
(式中、xは0<x<1、αは0<α≦3、βは5≦β≦9、γは1≦γ≦5、δは0.5≦δ≦2、ωは5≦ω≦15を満足する数である)で表される組成を有するユーロピウム付活サイアロン蛍光体ムおよび
一般式:(Sr1-x-yCaxEuy)AlSiN3 …(2)
(式中、xは0<x<1、0<y<0.2、0<x+y<1を満足する数である)で表されるユーロピウム付活カズン蛍光体の少なくとも1種から成る一方、上記深赤色蛍光体は
一般式:αMgO・βMgF2・(Ge1-xMnx)O2 …(3)
(式中、αおよびβは、3.0≦α≦4.0、0.4≦β≦0.6、0.001≦x≦0.5を満足する数である)で表される組成を有するマンガン付活マグネシウムフロロジャーマネート蛍光体であることを特徴とする。
一般式:(Sr1-x-y-z,Bax,Cay,Euz)5(PO4)3Cl …(4)
(式中、x、yおよびzは0≦x<0.5、0≦y<0.1、0.005≦z<0.1を満足する数である)で表される組成を有するユーロピウム付活アルカリ土類クロロ燐酸塩蛍光体が用いられる。式(3)で組成が表されるユーロピウム付活アルカリ土類クロロ燐酸塩蛍光体は、特にピーク波長が370~430nmの範囲の紫外光または紫色光の吸収効率に優れる。
一般式:(Ba1-x-y-z,Srx,Cay,Euz)(Mg1-uMnu)Al10O17 …(5)
(式中、x、yおよびzは0≦x<0.2、0≦y<0.1、0.005<z<0.5、0.1<u<0.5を満足する数である)で表される組成を有するユーロピウムマンガン付活アルミン酸塩蛍光体、
一般式:(Sr1-x-y-z-u,Bax,Mgy,Euz,Mnu)2SiO4 …(6)
(式中、x、y、zおよびuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)で表される組成を有するユーロピウムマンガン付活珪酸塩蛍光体、および
一般式: (Sr1-x,Eux)αSiβAlγOδNω …(7)
(式中、xは0<x<1、αは0<α≦3、βは12≦β≦14、γは2≦γ≦3.5、δは1≦δ≦3、ωは20≦ω≦22を満足する数である)で表される組成を有するユーロピウム付活サイアロン蛍光体との少なくとも1種が用いられる。
一般式:(Sr1-x,Eux)αSiβAlγOδNω …(1)
(式中、xは0<x<1、αは0<α≦3、βは5≦β≦9、γは1≦γ≦5、δは0.5≦δ≦2、ωは5≦ω≦15を満足する数である)で表される組成を有するユーロピウム付活サイアロン蛍光体および
一般式:(Sr1-x-yCaxEuy)AlSiN3 …(2)
(式中、xは0<x<1、0<y<0.2、0<x+y<1を満足する数である)で表されるユーロピウム付活カズン蛍光体の少なくとも1種が用いられる。
一般式:αMgO・βMgF2・(Ge1-xMnx)O2 …(3)
(式中、αおよびβは、3.0≦α≦4.0、0.4≦β≦0.6、0.001≦x≦0.5を満足する数である)で表される組成を有するマンガン付活マグネシウムフロロジャーマネート蛍光体が用いられる。
一般式:(Sr1-x-y-z,Bax,Cay,Euz)5(PO4)3Cl …(4)
(式中、x、yおよびzは0≦x<0.5、0≦y<0.1、0.005≦z<0.1を満足する数である)で表される組成を有することが好ましい。式(4)の組成を満足するEu付活アルカリ土類クロロ燐酸塩蛍光体は、LEDチップ2から出射される光の吸収効率が高く、かつ式(5)、(6)、(7)で表される緑色蛍光体との組合せ性に優れるものである。
一般式:(Ba1-x-y-z,Srx,Cay,Euz)(Mg1-uMnu)Al10O17 …(5)
(式中、x、yおよびzは0≦x<0.2、0≦y<0.1、0.005<z<0.5、0.1<u<0.5を満足する数である)で表される組成を有することが好ましい。式(3)の組成を満足するEu付活アルミン酸塩蛍光体は、LEDチップ2から出射される光の吸収効率が高く優れるものである。
一般式:(Sr1-x-y-z-u,Bax,Mgy,Euz,Mnu)2SiO4 …(6)
(式中、x、y、zおよびuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)で表される組成を有するユーロピウムマンガン付活珪酸塩蛍光体が用いられる。
一般式: (Sr1-x,Eux)αSiβAlγOδNω …(7)
(式中、xは0<x<1、αは0<α≦3、βは12≦β≦14、γは2≦γ≦3.5、δは1≦δ≦3、ωは20≦ω≦22を満足する数である)で表される組成を有するユーロピウム付活サイアロン蛍光体が用いられる。
一般式:(Sr1-x,Eux)αSiβAlγOδNω …(1)
(式中、xは0<x<1、αは0<α≦3、βは5≦β≦9、γは1≦γ≦5、δは0.5≦δ≦2、ωは5≦ω≦15を満足する数である)で表される組成を有することが好ましい。式(1)の組成を満足するユーロピウム付活サイアロン蛍光体は、LEDチップ2から出射される光の吸収効率が高く、かつ式(5)、(6)、(7)で表される緑色蛍光体との組合せ性に優れるものである。
一般式:(Sr1-x-yCaxEuy)AlSiN3 …(2)
(式中、xは0<x<1、0<y<0.2、0<x+y<1を満足する数である)で表されるユーロピウム付活カズン蛍光体が用いられる。この式(2)の組成を満足するユーロピウム付活カズン蛍光体も、LEDチップ2から出射される光の吸収効率が高く、かつ式(5)、(6)、(7)で表される緑色蛍光体との組合せ性に優れるものである。
一般式:αMgO・βMgF2・(Ge1-xMnx)O2 …(3)
(式中、αおよびβは、3.0≦α≦4.0、0.4≦β≦0.6、0.001≦x≦0.5を満足する数である)で表される組成を有することが好ましい。式(3)の組成を満足するマンガン付活マグネシウムフロロジャーマネート蛍光体は、赤色蛍光体(R)の主発光ピークよりも長波長領域に主発光ピークを有し、630~670nmの発光強度が増加し、赤味が増強されていることが判明する。これによって、赤色発光成分を補強し、演色性を効果的に改善することが可能となる。
青色蛍光体(B)として平均粒径が12μmのEu付活アルカリ土類クロロ燐酸塩((Sr0.95,Ba0.043,Eu0.007)5(PO4)3・Cl)蛍光体(以下、表1で「B1」と略記する)、
緑色蛍光体(G)として平均粒径が15μmのEuおよびMn付活アルカリ土類珪酸塩((Sr1.48,Ba0.32,Mg0.095,Eu0.1,Mn0.005)2SiO4)蛍光体(以下、表1で「G1」と略記する)、
緑色蛍光体として平均粒径が15μmのユーロピウム付活アルミン酸塩蛍光体((Ba0.95,Eu0.05)(Mg0.7Mn0.3)Al10O17)(以下、表1で「G2」と略記する)、
緑色蛍光体として平均粒径が15μmのユーロピウム付活サイアロン蛍光体((Sr2.7Eu0.3)Si13Al3O2N21)(以下、表1で「G3」と略記する)、
赤色蛍光体(R)として平均粒径が12μmであり、かつ表1に示すような組成をそれぞれ有するユーロピウム付活サイアロン蛍光体およびユーロピウム付活カズン蛍光体を用意した。さらに、深赤色蛍光体(DR)として、平均粒径が12μmであり、かつ表1に示すような組成をそれぞれ有するマンガン付活マグネシウムフロロジャーマネート蛍光体を用意した。各蛍光体の粒径はレーザー回折法で測定した値である。
深赤色蛍光体であるマンガン付活マグネシウムフロロジャーマネート蛍光体を含有させない点、赤色蛍光体(R)として従来のユーロピウム付活酸硫化ランタン蛍光体を用いた点、およびBGR蛍光体の混合比を表1に示すように調整した点以外は実施例1と同様に処理して、図2に示す構成と同様の構成を有する比較例1に係る白色LEDランプ1を作製し、後述する特性評価に供した。
赤色蛍光体(R)として従来のユーロピウム付活酸硫化ランタン蛍光体を用いた点およびBGR蛍光体の混合比を表1に示すように調整した点以外は実施例1と同様に処理して、図2に示す構成と同様の構成を有する比較例2に係る白色LEDランプ1を作製し、後述する特性評価に供した。
赤色蛍光体(R)におけるストロンチウム(Sr)量を過大に設定したサイアロン蛍光体を用いた点以外は実施例1と同様に処理して、図2に示す構成と同様の構成を有する比較例3に係る白色LEDランプ1を作製し、後述する特性評価に供した。
赤色蛍光体(R)としてストロンチウム(Sr)を含有しないサイアロン蛍光体を用いた点以外は実施例1と同様に処理して、図2に示す構成と同様の構成を有する比較例4に係る白色LEDランプ1を作製し、後述する特性評価に供した。
深赤色蛍光体において、Geに対するMnの含有比率を過少に設定したマンガン付活マグネシウムフロロジャーマネート蛍光体を使用した点以外は実施例1と同様に処理して、図2に示す構成と同様の構成を有する比較例5に係る白色LEDランプ1を作製し、後述する特性評価に供した。
深赤色蛍光体において、Geに対するMnの含有比率を過大に設定したマンガン付活マグネシウムフロロジャーマネート蛍光体を使用した点以外は実施例1と同様に処理して、図2に示す構成と同様の構成を有する比較例6に係る白色LEDランプ1を作製し、後述する特性評価に供した。
Claims (8)
- 紫外若しくは青色発光を出射する半導体発光素子を基板上に配置し、この半導体発光素子からの出射光により励起されて青色発光、緑色発光、赤色発光および深赤色発光をそれぞれ出射する青色蛍光体、緑色蛍光体、赤色蛍光体および深赤色蛍光体を含む発光部が上記半導体発光素子の発光面を覆うように形成されており、上記青色蛍光体、緑色蛍光体、赤色蛍光体および深赤色蛍光体から出射された各発光の混色により白色光を出射する白色発光ランプ1において、上記深赤色蛍光体は上記赤色蛍光体の主発光ピークよりも長波長領域に主発光ピークを有し、上記赤色蛍光体は
一般式:(Sr1-x,Eux)αSiβAlγOδNω …(1)
(式中、xは0<x<1、αは0<α≦3、βは5≦β≦9、γは1≦γ≦5、δは0.5≦δ≦2、ωは5≦ω≦15を満足する数である)で表される組成を有するユーロピウム付活サイアロン蛍光体および
一般式:(Sr1-x-yCaxEuy)AlSiN3 …(2)
(式中、xは0<x<1、0<y<0.2、0<x+y<1を満足する数である)で表されるユーロピウム付活カズン蛍光体の少なくとも1種から成る一方、上記深赤色蛍光体は、
一般式:αMgO・βMgF2・(Ge1-xMnx)O2 …(3)
(式中、αおよびβは、3.0≦α≦4.0、0.4≦β≦0.6、0.001≦x≦0.5を満足する数である)で表される組成を有するマンガン付活マグネシウムフロロジャーマネート蛍光体であることを特徴とする白色発光ランプ。 - 請求項1記載の白色発光ランプにおいて、前記青色蛍光体は、
一般式:(Sr1-x-y-z,Bax,Cay,Euz)5(PO4)3Cl …(4)
(式中、x、yおよびzは0≦x<0.5、0≦y<0.1、0.005≦z<0.1を満足する数である)で表される組成を有するユーロピウム付活アルカリ土類クロロ燐酸塩蛍光体から成ることを特徴とする白色発光ランプ。 - 請求項1または2記載の白色発光ランプにおいて、前記緑色蛍光体は、
一般式:(Ba1-x-y-z,Srx,Cay,Euz)(Mg1-uMnu)Al10O17 …(5)
(式中、x、yおよびzは0≦x<0.2、0≦y<0.1、0.005<z<0.5、0.1<u<0.5を満足する数である)で表される組成を有するユーロピウムマンガン付活アルミン酸塩蛍光体、
一般式:(Sr1-x-y-z-u,Bax,Mgy,Euz,Mnu)2SiO4 …(6)
(式中、x、y、zおよびuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)で表される組成を有するユーロピウムマンガン付活珪酸塩蛍光体および
一般式: (Sr1-x,Eux)αSiβAlγOδNω …(7)
(式中、xは0<x<1、αは0<α≦3、βは12≦β≦14、γは2≦γ≦3.5、δは1≦δ≦3、ωは20≦ω≦22を満足する数である)で表される組成を有するユーロピウム付活サイアロン蛍光体の少なくとも1種から成ることを特徴とする白色発光ランプ。 - 請求項1ないし請求項3のいずれか1項記載の白色発光ランプにおいて、
前記青色蛍光体、前記緑色蛍光体、前記赤色蛍光体および前記深赤色蛍光体は10μm以上80μm以下の範囲の平均粒径を有することを特徴とする白色発光ランプ。 - 請求項1ないし請求項4のいずれか1項記載の白色発光ランプにおいて、
前記発光部は、前記半導体発光素子の発光面を覆うように設けられ、前記青色蛍光体、前記緑色蛍光体、前記赤色蛍光体および前記深赤色蛍光体を含有する透明樹脂層を有することを特徴とする白色発光ランプ。 - 請求項1ないし請求項4のいずれか1項記載の白色発光ランプにおいて、
前記発光部は、前記半導体発光素子の発光面を覆うように設けられ、前記青色蛍光体、前記緑色蛍光体、前記赤色光体および前記深赤色蛍光体を含有しない第1の透明樹脂層と、上記第1の透明樹脂層を覆うように設けられ、前記青色蛍光体、前記緑色蛍光体、前記赤色蛍光体および前記深赤色蛍光体を含有する第2の透明樹脂層とを備えることを特徴とする白色発光ランプ。 - 請求項1ないし請求項6のいずれか1項記載の白色発光ランプにおいて、
前記半導体発光素子は370nm以上470nm以下の範囲にピーク波長を有する光を出射する発光ダイオードまたはレーザダイオードであることを特徴とする白色発光ランプ。 - 請求項1ないし請求項7のいずれか1項記載の白色発光ランプを具備することを特徴とする白色LED照明装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/634,634 US8710532B2 (en) | 2010-03-18 | 2011-03-14 | White light emitting lamp and white LED lighting apparatus including the same |
JP2012505656A JP5747023B2 (ja) | 2010-03-18 | 2011-03-14 | 白色発光ランプおよびそれを用いた白色led照明装置 |
CN201180014477.XA CN102812568B (zh) | 2010-03-18 | 2011-03-14 | 白光发射灯和包括该白光发射灯的白色led照明装置 |
EP11756217.3A EP2549554B9 (en) | 2010-03-18 | 2011-03-14 | White light emitting lamp, and white light led lighting device equipped with same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-063228 | 2010-03-18 | ||
JP2010063228 | 2010-03-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011115032A1 true WO2011115032A1 (ja) | 2011-09-22 |
Family
ID=44649125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/055885 WO2011115032A1 (ja) | 2010-03-18 | 2011-03-14 | 白色発光ランプおよびそれを用いた白色led照明装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8710532B2 (ja) |
EP (1) | EP2549554B9 (ja) |
JP (1) | JP5747023B2 (ja) |
CN (1) | CN102812568B (ja) |
WO (1) | WO2011115032A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011006501A (ja) * | 2009-06-23 | 2011-01-13 | Tokyo Kagaku Kenkyusho:Kk | 深赤色蛍光体 |
WO2013146790A1 (ja) * | 2012-03-26 | 2013-10-03 | 宇部マテリアルズ株式会社 | 深赤色発光性フルオロゲルマニウム酸マグネシウム蛍光体及びその製造方法 |
EP2772953A4 (en) * | 2011-10-24 | 2015-07-08 | Toshiba Kk | WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM USING A WHITE LIGHT SOURCE |
JP2016111190A (ja) * | 2014-12-05 | 2016-06-20 | 日亜化学工業株式会社 | 発光装置 |
KR20170018938A (ko) * | 2014-06-17 | 2017-02-20 | 오스람 옵토 세미컨덕터스 게엠베하 | 인광체, 인광체를 함유하는 발광 디바이스, 및 인광체의 제조 방법 |
TWI579490B (zh) * | 2013-12-31 | 2017-04-21 | 吉可多公司 | 以發光二極體為基礎的照明裝置及照明設備 |
JP2017216438A (ja) * | 2016-05-26 | 2017-12-07 | 日亜化学工業株式会社 | 発光装置 |
US10074781B2 (en) | 2013-08-29 | 2018-09-11 | Cree, Inc. | Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness |
KR20180105563A (ko) * | 2017-03-15 | 2018-09-28 | 니치아 카가쿠 고교 가부시키가이샤 | 알루민산염 형광체의 제조 방법, 알루민산염 형광체 및 발광장치 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5076017B2 (ja) * | 2010-08-23 | 2012-11-21 | 株式会社東芝 | 発光装置 |
KR101686572B1 (ko) * | 2011-10-21 | 2016-12-15 | 삼성전자 주식회사 | 발광 소자 |
JP6097084B2 (ja) * | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
WO2015052238A1 (de) | 2013-10-08 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Leuchtstoff, verfahren zum herstellen eines leuchtstoffs und verwendung eines leuchtstoffs |
KR101619982B1 (ko) * | 2013-11-13 | 2016-05-12 | 엘지이노텍 주식회사 | 청녹색 형광체, 이를 포함하는 발광 소자 패키지 및 조명 장치 |
KR102122359B1 (ko) | 2013-12-10 | 2020-06-12 | 삼성전자주식회사 | 발광장치 제조방법 |
CN106465510B (zh) * | 2014-03-20 | 2019-10-01 | 东芝高新材料公司 | 发光装置以及led灯泡 |
TWI709711B (zh) * | 2014-09-16 | 2020-11-11 | 美商Ge照明解決方案公司 | 增強的色彩偏好光源 |
EP3249703B1 (en) * | 2016-05-26 | 2021-08-04 | Nichia Corporation | Light emitting device |
CN108410452B (zh) * | 2017-02-09 | 2021-03-19 | 有研稀土新材料股份有限公司 | 发光材料组合物以及发光装置 |
JP7009879B2 (ja) * | 2017-09-26 | 2022-01-26 | 豊田合成株式会社 | 発光装置 |
CN109301058B (zh) * | 2018-11-29 | 2021-06-11 | 江苏博睿光电有限公司 | 一种荧光体混合物及其发光装置 |
CN113544432A (zh) * | 2019-01-18 | 2021-10-22 | 研究发展中心“拜鲁门”有限责任公司 | 具有生物辐射光谱的led白光源 |
TWI769064B (zh) * | 2021-08-24 | 2022-06-21 | 隆達電子股份有限公司 | 發光裝置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002171000A (ja) | 2000-09-21 | 2002-06-14 | Sharp Corp | 半導体発光装置およびそれを用いた発光表示装置 |
JP2003160785A (ja) | 2001-11-27 | 2003-06-06 | Toshiba Corp | 赤色発光蛍光体とそれを用いた発光装置 |
JP3749243B2 (ja) | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
US20060249739A1 (en) | 2005-05-06 | 2006-11-09 | Bily Wang | Multi-wavelength white light emitting diode |
JP2007291353A (ja) * | 2006-03-27 | 2007-11-08 | Mitsubishi Chemicals Corp | 蛍光体及びそれを使用した発光装置 |
JP2010004035A (ja) * | 2008-05-22 | 2010-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、および画像表示装置 |
WO2010021346A1 (ja) * | 2008-08-20 | 2010-02-25 | 三菱化学株式会社 | 半導体発光装置およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0686997A3 (en) * | 1994-06-06 | 1996-06-26 | Matsushita Electric Ind Co Ltd | Discharge lamp and lighting device for general lighting |
US6157126A (en) * | 1997-03-13 | 2000-12-05 | Matsushita Electric Industrial Co., Ltd. | Warm white fluorescent lamp |
US7906790B2 (en) * | 2003-06-24 | 2011-03-15 | GE Lighting Solutions, LLC | Full spectrum phosphor blends for white light generation with LED chips |
GB2405409A (en) * | 2003-08-29 | 2005-03-02 | Gen Electric | Phosphor blends for high-CRI fluorescent lamps |
KR100616513B1 (ko) * | 2003-11-01 | 2006-08-29 | 삼성전기주식회사 | 적색형광체, 그 제조방법, 이를 이용한 적색 led소자,백색 led 소자 및 능동 발광형 액정 디스플레이 소자 |
CN101171321B (zh) * | 2005-04-01 | 2013-06-05 | 三菱化学株式会社 | 无机功能材料原料用合金粉末及荧光体 |
CN104759615A (zh) | 2005-04-01 | 2015-07-08 | 三菱化学株式会社 | 无机功能材料原料用合金粉末及荧光体 |
KR100926898B1 (ko) * | 2007-02-16 | 2009-11-17 | 삼성전자주식회사 | 심적색 형광체 및 이의 제조 방법 |
JP2010050235A (ja) * | 2008-08-20 | 2010-03-04 | Mitsubishi Chemicals Corp | 半導体発光装置およびその製造方法 |
-
2011
- 2011-03-14 JP JP2012505656A patent/JP5747023B2/ja active Active
- 2011-03-14 WO PCT/JP2011/055885 patent/WO2011115032A1/ja active Application Filing
- 2011-03-14 US US13/634,634 patent/US8710532B2/en active Active
- 2011-03-14 CN CN201180014477.XA patent/CN102812568B/zh active Active
- 2011-03-14 EP EP11756217.3A patent/EP2549554B9/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002171000A (ja) | 2000-09-21 | 2002-06-14 | Sharp Corp | 半導体発光装置およびそれを用いた発光表示装置 |
JP3749243B2 (ja) | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
JP2003160785A (ja) | 2001-11-27 | 2003-06-06 | Toshiba Corp | 赤色発光蛍光体とそれを用いた発光装置 |
US20060249739A1 (en) | 2005-05-06 | 2006-11-09 | Bily Wang | Multi-wavelength white light emitting diode |
JP2007291353A (ja) * | 2006-03-27 | 2007-11-08 | Mitsubishi Chemicals Corp | 蛍光体及びそれを使用した発光装置 |
JP2010004035A (ja) * | 2008-05-22 | 2010-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、および画像表示装置 |
WO2010021346A1 (ja) * | 2008-08-20 | 2010-02-25 | 三菱化学株式会社 | 半導体発光装置およびその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2549554A4 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011006501A (ja) * | 2009-06-23 | 2011-01-13 | Tokyo Kagaku Kenkyusho:Kk | 深赤色蛍光体 |
EP2772953A4 (en) * | 2011-10-24 | 2015-07-08 | Toshiba Kk | WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM USING A WHITE LIGHT SOURCE |
US9551467B2 (en) | 2011-10-24 | 2017-01-24 | Kabushiki Kaisha Toshiba | White light source and white light source system including the same |
WO2013146790A1 (ja) * | 2012-03-26 | 2013-10-03 | 宇部マテリアルズ株式会社 | 深赤色発光性フルオロゲルマニウム酸マグネシウム蛍光体及びその製造方法 |
JPWO2013146790A1 (ja) * | 2012-03-26 | 2015-12-14 | 宇部マテリアルズ株式会社 | 深赤色発光性フルオロゲルマニウム酸マグネシウム蛍光体及びその製造方法 |
US10074781B2 (en) | 2013-08-29 | 2018-09-11 | Cree, Inc. | Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness |
TWI579490B (zh) * | 2013-12-31 | 2017-04-21 | 吉可多公司 | 以發光二極體為基礎的照明裝置及照明設備 |
KR102270057B1 (ko) | 2014-06-17 | 2021-06-25 | 오스람 옵토 세미컨덕터스 게엠베하 | 인광체, 인광체를 함유하는 발광 디바이스, 및 인광체의 제조 방법 |
KR20170018938A (ko) * | 2014-06-17 | 2017-02-20 | 오스람 옵토 세미컨덕터스 게엠베하 | 인광체, 인광체를 함유하는 발광 디바이스, 및 인광체의 제조 방법 |
JP2016111190A (ja) * | 2014-12-05 | 2016-06-20 | 日亜化学工業株式会社 | 発光装置 |
JP2017216438A (ja) * | 2016-05-26 | 2017-12-07 | 日亜化学工業株式会社 | 発光装置 |
JP2019114794A (ja) * | 2016-05-26 | 2019-07-11 | 日亜化学工業株式会社 | 発光装置 |
JP2021006909A (ja) * | 2016-05-26 | 2021-01-21 | 日亜化学工業株式会社 | 発光装置 |
JP7239841B2 (ja) | 2016-05-26 | 2023-03-15 | 日亜化学工業株式会社 | 発光装置 |
JP2019163483A (ja) * | 2017-03-15 | 2019-09-26 | 日亜化学工業株式会社 | アルミン酸塩蛍光体及び発光装置 |
KR20180105563A (ko) * | 2017-03-15 | 2018-09-28 | 니치아 카가쿠 고교 가부시키가이샤 | 알루민산염 형광체의 제조 방법, 알루민산염 형광체 및 발광장치 |
JP7007594B2 (ja) | 2017-03-15 | 2022-02-10 | 日亜化学工業株式会社 | アルミン酸塩蛍光体及び発光装置 |
KR102528846B1 (ko) | 2017-03-15 | 2023-05-03 | 니치아 카가쿠 고교 가부시키가이샤 | 알루민산염 형광체의 제조 방법, 알루민산염 형광체 및 발광장치 |
Also Published As
Publication number | Publication date |
---|---|
EP2549554A4 (en) | 2014-06-11 |
CN102812568B (zh) | 2015-09-30 |
EP2549554B1 (en) | 2015-08-05 |
US8710532B2 (en) | 2014-04-29 |
EP2549554A1 (en) | 2013-01-23 |
EP2549554B9 (en) | 2016-09-21 |
JP5747023B2 (ja) | 2015-07-08 |
CN102812568A (zh) | 2012-12-05 |
JPWO2011115032A1 (ja) | 2013-06-27 |
US20130001628A1 (en) | 2013-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5747023B2 (ja) | 白色発光ランプおよびそれを用いた白色led照明装置 | |
JP5777520B2 (ja) | 白色発光ランプおよびそれを用いた白色led照明装置 | |
JP5121736B2 (ja) | 白色発光ランプとそれを用いた照明装置 | |
US10008644B2 (en) | Light emitting device and fabricating method thereof | |
JP4945436B2 (ja) | 白色発光ランプとそれを用いたバックライト、表示装置および照明装置 | |
JP5398141B2 (ja) | 白色発光型ledランプおよびそれを用いたバックライト並びに液晶表示装置 | |
JP5127455B2 (ja) | 白色発光装置とその製造方法、およびそれを用いたバックライト並びに液晶表示装置 | |
JPWO2009037848A1 (ja) | 照明用白色発光ランプとそれを用いた照明器具 | |
JP5390390B2 (ja) | 蛍光体およびそれを用いたledランプ | |
JP4965840B2 (ja) | 白色発光型ledランプの製造方法およびそれを用いたバックライトの製造方法並びに液晶表示装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180014477.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11756217 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012505656 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13634634 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011756217 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |